ZX5T953G

100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

FEATURES
5 amps continuous current Up to 10 amps peak current Very low saturation voltages

SOT223

APPLICATIONS
Motor driving Line switching High side switches Subscriber line interface cards (SLIC)

ORDERING INFORMATION
DEVICE ZX5T953GTA ZX5T953GTC REEL SIZE 7 13 TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units 4000 units

PINOUT

DEVICE MARKING
X5T953

TOP VIEW

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SEMICONDUCTORS

ZX5T953G
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -140 -100 -7 -5 -10 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C

THERMAL RESISTANCE
PARAMETER Junction to ambient
(a)

SYMBOL R JA

VALUE 42

UNIT C/W

NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

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SEMICONDUCTORS

ZX5T953G
CHARACTERISTICS

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ZX5T953G
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R 1k I EBO V CE(SAT) 1 -20 -70 -120 -240 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 100 100 25 15 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF -985 -920 250 200 50 30 5 125 42 42 540 300 MIN. -140 -140 -100 -7 TYP. -160 -160 -115 -8.1 1 1 -20 -0.5 -20 -0.5 -10 -30 -90 -150 -340 -1100 -1050 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV I C =-100 A I C =-1 A, RB 1k I C =-10mA* I E =-100 A V CB =-100V VCB=-100V,Tamb=100C V CB =-100V VCB=-100V,Tamb=100C V EB =-6V I C =-0.1A, I B =-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* I C =-4A, I B =-400mA* I C =-4A, V CE =-2V* I C =-10mA, V CE =-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* MHz IC =-100mA, VCE =-10V f=50MHz pF ns V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA

* Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.

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SEMICONDUCTORS

ZX5T953G
TYPICAL CHARACTERISTICS

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PACKAGE OUTLINE PAD LAYOUT DETAILS

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS
Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches

Zetex plc 2003

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www.zetex.com ISSUE 2 - SEPTEMBER 2003

SEMICONDUCTORS