EE205ElectronDevices

S.MAGESHWARI AP/EEE NITT

UNIT4:JFET
JunctionFieldEffectTransistor

TheFieldEffectTransistor(FET)
In 1945, Shockley had an idea for making a solid state device outofsemiconductors. Hereasonedthatastrongelectricalfieldcouldcausetheflow ofelectricitywithinanearbysemiconductor. Hetriedtobuildone,butitdidn'twork. Three years later, Brattain & Bardeen built the first working transistor,thegermaniumpointcontacttransistor,whichwas designedasthejunction(sandwich)transistor. In 1960 Bell scientist John Atalla developed a new design basedonShockley'soriginalfieldeffecttheories. By the late 1960s, manufacturers converted from junction typeintegratedcircuitstofieldeffectdevices.

TheFieldEffectTransistor(FET)
Field effect devices are those in which current is controlled by the action of an electron field, rather than carrierinjection. Fieldeffect transistors are so named because a weak electrical signal coming in through one electrode creates anelectricalfieldthroughtherestofthetransistor. TheFETwasknownasaunipolar transistor. The term refers to the fact that current is transported by carriers of one polarity (majority), whereas in the conventional bipolar transistor carriers of both polarities (majorityandminority)areinvolved.

Introduction(FET)
Fieldeffecttransistor(FET)areimportantdevicessuchas BJTs Alsousedasamplifierandlogicswitches TypesofFET:
JFET(junctionfieldeffecttransistor) DepletionmodeMOSFET EnhancementmodeMOSFET

WhatisthedifferencebetweenJFETandBJT?

Currentcontrolledamplifiers

Voltagecontrolledamplifiers

JunctionFETs (JFETs)
JFETs consistsofapieceofhighresistivity semiconductormaterial(usuallySi)which constitutesachannelforthemajoritycarrier flow. Conductingsemiconductorchannelbetween twoohmic contacts source&drain

JunctionFETs (JFETs)
Themagnitudeofthiscurrentiscontrolledbya voltageappliedtoagate,whichisareversebiased. ThefundamentaldifferencebetweenJFETandBJT devices:whentheJFETjunctionisreversebiasedthe gatecurrentispracticallyzero,whereasthebase currentoftheBJTisalwayssomevaluegreaterthan zero.

JunctionFETs
JFETisahighinputresistancedevice,whiletheBJTis comparativelylow. Ifthechannelisdopedwithadonorimpurity,ntype materialisformedandthechannelcurrentwill consistofelectrons. Ifthechannelisdopedwithanacceptorimpurity,p typematerialwillbeformedandthechannelcurrent willconsistofholes. Nchanneldeviceshavegreaterconductivitythanp channeltypes,sinceelectronshavehighermobility thandoholes;thusnchannelJFETs are approximatelytwiceasefficientconductors comparedtotheirpchannelcounterparts.

Introduction..(AdvantagesofFET)
Highinputimpedance(M) (LinearACamplifiersystem) Temperature stablethanBJT Verysmallinsize,occupiesverysmallspaceinICs,Smaller thanBJT Canbefabricatedwithfewerprocessing BJTisbipolar conductionbothholeandelectron FETisunipolar usesonlyonetypeofcurrentcarrier LessnoisecomparetoBJT Usuallyuseaslogicswitch SourceanddrainareinterchangeableinmostLowfrequency applications LowVoltageLowCurrentOperationispossible(Lowpower consumption) Nominoritycarrierstorage(Turnoffisfaster) Selflimitingdevice LowvoltagelowcurrentoperationispossibleinMOSFETS Zerotemperaturedriftofoutputispossible.

DisadvantagesofFET
EasytodamagecomparetoBJT ???

Types of Field Effect Transistors (The Classification)

FET
JFET

n-Channel JFET p-Channel JFET

MOSFET (IGFET)

Enhancement MOSFET
n-Channel EMOSFET

Depletion MOSFET
n-Channel DMOSFET p-Channel DMOSFET

p-Channel EMOSFET

Junctionfieldeffecttransistor..
Thereare2typesofJFET
nchannel JFET pchannel JFET

ThreeTerminal
Drain D(Saliran) GateG(Get) Source S(Punca)

Junctionfieldeffecttransistor(JFET)

SYMBOLS
Drain Drain Drain

Gate

Gate

Gate

Source n-channel JFET

Source n-channel JFET Offset-gate symbol p-channel JFET

Source

BasicstructureofJFETs
Inadditiontothechannel,a JFETcontainstwoohmic contacts:thesource andthe drain. TheJFETwillconductcurrent equallywellineither directionandthesourceand drainleadsareusually interchangeable.

Basic structure Source

p+

Gate G

G
Circuit symbol for n-channel FET
Drain

S S G

D D p+
Metal electrode Insulation (SiO2) p

n-channel

p+
Depletion region n n-channel

Cross section n

p+

Depletion regions

n-channel
D

S
Channel thickness

(b)
p+
(a)

HowJFETFunction
Thegateisconnectedtothesource. Sincethepn junctionisreversebiased,littlecurrentwill flowinthegateconnection. Thepotentialgradientestablishedwillformadepletion layer,wherealmostalltheelectronspresentinthentype channelwillbesweptaway. Themostdepletedportionisinthehighfieldbetweenthe GandtheD,andtheleastdepletedareaisbetweentheG andtheS. Becausetheflowofcurrentalongthechannelfromthe (+ve)draintothe(ve)sourceisreallyaflowoffree electronsfromStoDinthentypeSi,themagnitudeofthis currentwillfallasmoreSi becomesdepletedoffree electrons.

HowJFETFunction
Thereisalimittothedrain current(ID)whichincreased VDS candrivethroughthe channel. Thislimitingcurrentisknown asIDSS (DraintoSourcecurrent withthegateshortedtothe source).

 TheoutputcharacteristicsofannchannelJFETwiththe gateshortcircuitedtothesource. TheinitialriseinID isrelatedtothebuildupofthe depletionlayerasVDS increases. ThecurveapproachesthelevelofthelimitingcurrentIDSS whenID beginstobepinchedoff. Thephysicalmeaningofthistermleadstoonedefinition ofpinchoffvoltage,VP ,whichisthevalueofVDS at whichthemaximumIDSS flows.

WateranalogyfortheJFETcontrol mechanism

N-channel JFET
NchannelJFET:
Majorstructureisntypematerial(channel) between embeddedptypematerial toform2pn junction. Inthenormaloperationofannchanneldevice,theDrain(D) is positivewithrespecttotheSource(S). Currentflowsintothe Drain(D),throughthechannel,andoutoftheSource(S) Becausetheresistanceofthechanneldependsonthegateto sourcevoltage(VGS), thedraincurrent(ID) iscontrolledbythat voltage

Nchannel JFET
Thistransistorismadeby formingachannelofN typematerialinaPtype substrate. Threewiresarethen connectedtothedevice. Oneateachendofthe channel. Oneconnectedtothe substrate. Inasense,thedeviceisa bitlikeaPNjunction diode,exceptthatthere aretwowiresconnectedto theNtypeside.

NchannelJFET..

Operation of JFET at Various Gate Bias Potentials

Figure:Thenonconductivedepletionregionbecomesbroaderwithincreasedreversebias. (Note: ThetwogateregionsofeachFETareconnectedtoeachother.)

OperationofnchannelJFET
JFETisbiasedwithtwovoltagesources: VDD VGG VDD generatevoltagebiasbetweenDrain(D)andSource(S) VDS VDD causesdraincurrent,ID flowsfromDrain(D)toSource(S) VGG generatevoltagebiasbetweenGate(G)andSource(S) withnegativepolaritysourceisconnectedtotheGate Junction(G) reversebiasesthegate;thereforegatecurrent, IG =0. VGG istoproducedepletionregioninNchannelsothatitcan controltheamountofdraincurrent,ID thatflowsthroughthe channel

P-channel JFET
PchannelJFET:
Majorstructureisptypematerial(channel) betweenembeddedntypematerial toform2pn junction. Currentflow:fromSource(S)toDrain(D) HolesinjectedtoSource(S) throughptype channelandflowedtoDrain(D)

PchannelJFET..

OperationofpchannelJFET
JFETisbiasedwithtwovoltagesources: VDD VGG VDD generatevoltagebiasbetweenDrain(D)andSource(S) VDS VDD causesdraincurrent,ID flowsfromSource(S)toDrain(D) VGG generatevoltagebiasbetweenGate(G)andSource(S) withnegativepolaritysourceisconnectedtotheGate Junction(G) reversebiasesthegate;thereforegatecurrent, IG =0. VGG istoproducedepletionregioninPchannelsothatitcan controltheamountofdraincurrent,ID thatflowsthroughthe channel

Operation of a JFET
Drain N -

Gate P + N Source P +

+
DC Voltage Source

JFETCHARACTERISTICS
IVCHARACTERISTICSORDRAIN CHARACTERISTICS VDSVsIDS CONSTANTVALUEOFVGS TRANSFERCHARACTERISTICSORMUTUAL CHARACTERISTICS VGSVsIDS CONSTANTVALUEOFVDS

JFETCharacteristicCurve
Tostart,supposeVGS=0 Then,whenVDS isincreased,ID increases.Therefore,IDis proportionaltoVDS forsmallvaluesofVDS ForlargervalueofVDS,asVDS increases,thedepletionlayer becomewider,causingtheresistanceofchannelincreases. Afterthepinchoffvoltage(Vp) isreached,theID becomes nearlyconstant(calledasID maximum,IDSSDraintoSource currentwithGateShorted)

JFET Characteristic Curve..

For negative values of VGS, the gate-to-channel junction is reverse biased even with VDS=0 Thus, the initial channel resistance is higher (in which the initial slope of the curves is smaller for values of VGS closer to the pinch-off voltage (VP) The resistance value is under the control of VGS If VGS is less than pinch-off voltage, the resistance becomes an open-circuit ;therefore the device is in cutoff (VGS=VGS(off) ) The region where ID constant The saturation/pinchoff region The region where ID depends on VDS is called the linear/triode/ohmic region

 Withasteadygatesourcevoltageof1V thereisalways1Vacrossthewallofthe channelatthesourceend. Adrainsourcevoltageof1Vmeans thattherewillbe2Vacrossthewallat thedrainend.(Thedrainisup 1Vfrom thesourcepotentialandthegateis1V down,hencethetotaldifferenceis2V.) Thehighervoltagedifferenceatthe drainendmeansthattheelectron channelissqueezeddown abitmoreat thisend.

 Whenthedrainsourcevoltageis increasedto10Vthevoltageacross thechannelwallsatthedrainend increasesto11V,butremainsjust1V atthesourceend. Thefieldacrossthewallsnearthe drainendisnowalotlargerthanat thesourceend. Asaresultthechannelnearthedrain issqueezeddown quitealot.

 Increasingthesourcedrainvoltageto 20Vsqueezesdownthisendofthe channelstillmore. Asweincreasethisvoltagewe increasetheelectricfieldwhichdrives electronsalongtheopenpartofthe channel. However,alsosqueezesdownthe channelnearthedrainend. Thisreductionintheopenchannel widthmakesitharderforelectronsto pass. Asaresultthedrainsourcecurrent tendstoremainconstant whenwe increasethedrainsourcevoltage.

 IncreasingVDS increasesthewidthsofdepletionlayers,which penetratemoreintochannelandhenceresultinmorechannel narrowingtowardthedrain. Theresistanceofthenchannel,RAB thereforeincreaseswith VDS. Thedraincurrent:IDS =VDS/RAB ID versusVDS exhibitsasublinear behavior,seefigureforVDS< 5V. Thepinchoffvoltage,VP isthemagnitudeofreversebias neededacrossthep+n junctiontomakethemjusttouchatthe drainend. Sinceactualbiasvoltageacrossp+n junctionatdrainendisVGD, thepinchoffoccurwhenever:VGD =VP.

 BeyondVDS =VP,thereisashort pinchoffchanneloflength,po. AsVDS increases,mostof additionalvoltagesimplydrops acrosspo asthisregionis depletedofcarriersandhence highlyresistive. Voltagedropacrosschannel length,Lch remainasVP. BeyondpinchoffthenID = VP/RAP (VDS>VP).

 Whathappenwhen negativevoltage,says VGS=2V,isappliedto gatewithrespectto source(withVDS=0). Thep+n junctionarenow reversebiased fromthe start,thechannelis narrower,andchannel resistanceisnowlarger thanintheVGS=0case.

 ThedraincurrentthatflowswhenasmallVDS applied (Figb)isnowsmallerthaninVGS=0case. AppliedVDS=3Vtopinchoffthechannel(Figc). WhenVDS=3V,VGD acrossp+n junctionatdrainendis 5V,whichisVP,sochannelbecomespinchoff. Beyondpinchoff,ID isnearlysaturated justasinthe VGS=0case. PinchoffoccursatVDS=VDS(sat),VDS(sat)=VP+VGS,where VGS isve voltage(reducingVP). ForVDS>VDS(sat),ID becomesnearlysaturatedatvalueas IDS.

 Beyondpinchof,withve VGS,IDS is

WhereRAP(VGS)istheeffectiveresistanceofthe conductingnchannelfromAtoP,whichdependson channelthicknessandhenceVGS. WhenVGS=VP=5VwithVDS=0,thetwodepletionlayers touchovertheentirechannellengthandthewhole channelis closed. Thechannelsaidtobeoff.

ID versusVDS forVGS =0V.

JFETCharacteristicCurve

JFETforVGS =0Vand0<VDS<|Vp|

Channel becomes narroweras VDS is increased

Pinchoff(VGS =0V,VDS =VP).

Applicationofanegativevoltagetothegateofa JFET.

IVcharacteristics

IVcharacteristics

JFET:IVcharacteristics

nChannelJFETcharacteristicscurvewithIDSS =8mA and VP = 4V.

JFETCharacteristicCurve

CharacteristicsfornchannelJFET

SimpleOperationandBreakdownofnChannelJFET

Figure:nChannelFETforvGS =0.

N-Channel JFET Characteristics and Breakdown

BreakDownRegion

Figure:IfvDG exceedsthebreakdownvoltageVB,draincurrentincreasesrapidly.

OutputorDrain(VDID)CharacteristicsofnJFET

Figure:CircuitfordraincharacteristicsofthenchannelJFETanditsDraincharacteristics.

Nonsaturation(Ohmic)Region: Thedraincurrentisgivenby Saturation(orPinchoff) Region:

I = I
DSS V 2 P

V
I = 2I

DS

V < GS

P
2
DS

DS

DSS V V 2 GS P V P

V DS

V 2

V
2

V V DS P GS

DS

V GS

V P

and

Where,IDSS istheshortcircuitdraincurrent,VP isthepinchoffvoltage

V = I 1 GS I DS DSS V P

pChannelJFET

pChannelJFETcharacteristicswithIDSS =6mA andVP =+6V.

CharacteristicsforpchannelJFET

+ + +

EffectofVGS onDrainCharacteristics
Thevalueofpinchoffvoltageisreachedata smallervalueofdraincurrentascomparedto thatwhenVGS=0 Thevalueofdraintosourcevoltageis decreasedascomparedtothatwhenVGS=0.

TransferCharacteristics
The input-output transfer characteristic of the JFET is not as straight forward as it is for the BJT. In BJT: IC= IB which is defined as the relationship between IB (input current) and IC (output current).

TransferCharacteristics..
In JFET, the relationship between VGS (input voltage) and ID (output current) is used to define the transfer characteristics. It is called as Shockleys Equation:

The relationship is more complicated (and not linear) As a result, FETs are often referred to a square law devices

VGS ID = IDSS 1 VP

VP=VGS(OFF)

TransferCharacteristics
DefinedbyShockleysequation:
V GS I D = I DSS 1 VGS ( off )
2

VP = VGS ( off )

RelationshipbetweenID andVGS. Obtainingtransfercharacteristiccurveaxispointfrom Shockley:

WhenVGS =0V,ID =IDSS WhenVGS =VGS(off)orVp,ID =0mA

 ThereisaconvenientrelationshipbetweenIDS andVGS. Beyondpinchoff

I DS

VGS = I DSS 1 V GS ( off )

WhereIDSS isdraincurrentwhenVGS=0andVGS(off) is definedasVP,thatisgatesourcevoltagethatjust pinchesoffthechannel. ThepinchoffvoltageVP hereisa+ve quantitybecauseit wasintroducedthroughVDS(sat). VGS(off) howeverisnegative,VP.

TransferCharacteristics
Theprocessforplottingtransconductance curveforagivenJFET: Plotapointthatcorrespondstovalueof VGS(off). Plotapoit thatcorrespondstovalueofIDSS. Select3ormorevaluesofVGS between0V andVGS(off).ForvalueofVGS,determinethe correspondingvalueofID from

Plotthepointfrom(3)andconnectallthe plottedpointwithasmoothcurve.

Transfer (Mutual) Characteristics of n-Channel JFET

V I =I 1 GS DS DSS V P

IDSS

VGS (off)=VP

Figure:Transfer(orMutual)CharacteristicsofnChannelJFET

TransferCharacteristics

JFETTransferCharacteristicCurve

JFETCharacteristicCurve

VDD

VDD

RD R1

FET Amplifier Configurations and Relationships:

io Co +

CS
RL vo _

CG
' L

CD g m R 'L 1 + g m R 'L R SS R L R Th R SS 1 gm

ii Rs + vs _ _ + vi Ci
R2

G S

A vi R 'L Zi

-g m R

gmR

' L

RSS

CSS

rd R D R L R Th rd R D

rd R D R L R SS 1 gm

Common Source (CS) Amplifier

ii Rs + vs _ _ C2 R2 vi RSS R1 VCC + Ci G S D Co RD RL + vo _

io

Zo A vs

rd R D

Common Gate (CG) Amplifier

VDD

VDD

AI AP
io Co + RL vo _

R1 D

Zi Zi Zi A vi A A vi vi R s + Zi R s + Zi R s + Zi Z Z Z A vi i A vi i A vi i RL RL RL A vi A I A vi A I A vi A I

ii Rs + vs _ _ + vi Ci
R2

G S

where R Th = R1 R 2
Note: The biasing circuit is the same for each amp.

R SS

Common Drain (CD) Amplifier (also called source follower)

FETApplication
RFAmplifier Buffer RFMixer AGCAmplifier CascodeAmplifier ChopperAmplifier Variableresistor AudioAmplifier RFOscillator

MetalOxideSemiconductorFieldEffectTransistors

MOSFET

MetalOxideSemiconductorFieldEffectTransistors(MOSFETs)
FET basic operational theory The current controlled mechanism (drain current) is based on electric field established by the voltage applied to the control terminal (gate). Current is only conducted by only one type of carrier electrons or holes (that is why sometimes FET is called unipolar transistors. Another type is the insulated gate FET or IGFET. Why MOS (Metal-Oxide) Transistors? Very small (smaller silicone area on the IC) Simple to manufacture No need for biasing resistors. Used in VLSI (very-large-scale integration) The enhancement type MOSFET is the most significant semiconductor devise available today.

MetalOxideSemiconductorFieldEffectTransistor(MOSFET)
Metaloxidesemiconductorfieldeffecttransistor(MOSFET)hasbeenextremely popularsincethelate1970s.

ComparedtoBJTs,MOStransistors: Canbemadesmaller/higherintegrationscale Easiertofabricate/lowermanufacturingcost Simplercircuitryfordigitallogicandmemory Inferioranalogcircuitperformance(lowergain)

MostdigitalICsuseMOStechnology

Recenttrend:moreandmoreanalogcircuitsareimplementedinMOStechnologyfor lowercostintegrationwithdigitalcircuitsinasamechip

DifferenttypesofFETs
JunctionFET(JFET)

DifferenttypesofFETs
MetalOxideSemiconductorFET(MOSFET)

TypesofMOSFET

EnhancementMode

EnhancementMode

DepletionMode

DepletionMode

BasicMOSFET(nchannel)
Thegateelectrodeisplaced ontopofaverythin insulatinglayer. Thereareapairofsmalln typeregionsjustunderthe drain&sourceelectrodes. Ifapplya+vevoltageto gate,willpushawaythe holes insidetheptype substrateandattractsthe moveableelectronsinthe ntyperegionsunderthe source&drainelectrodes.

BasicMOSFET(nchannel)

Increasingthe+vegate voltagepushestheptype holesfurtherawayand enlargesthethicknessof thecreatedchannel. Asaresultincreasesthe amountofcurrentwhich cangofromsourceto drain thisiswhythis kindoftransistoriscalled anenhancementmode device.

BasicMOSFET(pchannel)
Thesebehaveinasimilarway,buttheypasscurrent whenavegatevoltagecreatesaneffectiveptype channellayerundertheinsulator. Byswappingaroundptypeforntypewecanmakepairs oftransistorswhosebehaviourissimilarexceptthatall thesignsofthevoltagesandcurrentsarereversed. Pairsofdeviceslikethiscarecalledcomplimentary pairs.

 InannchannelMOSFET,thechannelismade ofntypesemiconductor,sothechargesfree tomovealongthechannelarenegatively charged(electrons). Inapchanneldevicethefreechargeswhich movefromendtoendarepositivelycharged (holes).

 CrosssectionandcircuitsymbolofanntypeMOSFET.

MetalOxideSemiconductorFieldEffect Transistors(MOSFETs) DepletionType

The depletion type MOSFET has similar structure to that the enhancement type MOSFET but with one important difference: The depletion MOSFET has a physically implanted channel. Thus an n-channel depletion-type MOSFET has an n-type silicone region connecting the source and drain (both +n) at the top of the type substrate. Thus if a voltage vDS is applied between the drain and source, a current iD flows for vGS = 0 i.e there is no need to induce the channel. The channel depth and hence its conductivity is controlled by vGS. Applying a positive vGS enhances the channel by attracting more electrons. The reverse when applying negative volt. The negative voltage is said to deplete the channel (depletion mode).

MOSFET DepletionType

ThecurrentvoltagecharacteristicsofadepletiontypenchannelMOSFETfor whichVt =4Vandkn(W/L) =2mA/V2:(a) transistorwithcurrentandvoltage polaritiesindicated;(b) theiD vDS characteristics;(c) theiD vGS characteristicin

MOSFET DepletionType
vGS is positive the transistor will be operated in the enhancement mode enhancement mode vGS is negative the transistor will be operated in the depletion mode. depletion mode.

The current-voltage characteristics of a depletion-type nchannel MOSFET for which Vt = -4 V and kn(W/L) = 2 mA/V2

MOSFET DepletionType

MOSFET DepletionType

PhysicalOperation ofEnhancementMOSFET

Operation with No Gate Voltage Withnobiasappliedtothegate,twobacktobackdiodesexistinseriesbetweendrain andsource.Thetwobacktobackdiodespreventcurrentconductionfromdrainto sourcewhenavoltagevDSisapplied.Theresistanceisoftheorderof10^12ohms CreatingaChannelforCurrentFlow IfSandDaregroundedandapositivevoltageisappliedtoG,theholesarerepelled fromthechannelregiondownwards,leavingbehindacarrierdepletionregion. FurtherincreasingVGattractsminoritycarrier(electrons)fromthesubstrateintothe channelregion.Whensufficientamountofelectronsaccumulatenearthesurfaceof thesubstrateunderthegate,annregioniscreatedcalledastheinversionlayer.

PhysicalOperationofEnhancementMOSFET ApplyingaSmallvDS
When a small potential is applied across the Gate and source, it pushes away the holes towards the substrate and attract electrons from the Drain and Source into the channel region. When sufficient electrons are formulated beneath the Gate area, current flows between the Drain and the Source. (Basically the holes are pushed away in N channel NMOS type to be replaced by the electrons from both the Source and the Drain creating a channel of N majority causing current to flow from

PhysicalOperationof EnhancementMOSFET ApplyingaSmallvDS

ApplyingasmallvDS(~0.1or0.2V)causesacurrentiD toflowthroughtheinducednchannelfromDtoS. ThemagnitudeofiDdependsonthedensityofelectrons inthechannel,whichinturndependsonvGS. ForvGS=Vt(thresholdvoltage),thechannelisjust inducedandtheconductedcurrentisstillnegligibly small. AsvGS>Vt,depthofthechannelincreases,iDwillbe proportionalto(vGS Vt),knownasexcessgatevoltage oreffectivevoltage. IncreasingvGSaboveVtenhancesthechannel,henceit iscalledenhancementtypeMOSFET. NotethatiG=0.

PhysicalOperationof EnhancementMOSFET
OperationasvDSisIncreased

v DSsat v GS Vt

vDSappearsasavoltagedropacross thechannel. Voltageacrosstheoxidedecreases fromvGSatStovGSVtatD. Thechanneldepthwillbetapered, andbecomemoretaperedasvDSis increased. Eventually,whenvGSvDS=Vt,the channelwillbepinchedoff. IncreasingvDSbeyondthisvaluehas noeffectonthechannelshapeandiD saturates(remainsconstant)atthis value.TheMOSFETentersthe saturationregionofoperation. vDSsat=Vgs Vt

v DSsat v GS Vt

PhysicalOperationof EnhancementMOSFET
v DSsat v GS V t

v DSsat

v GS V t

ThedraincurrentiD versusthedraintosourcevoltagevDS foranenhancementtype NMOStransistoroperatedwithvGS>Vt.

MOSFET EnhancementType

TheenhancementtypeNMOStransistorwithapositivevoltageappliedtothegate.Annchannelis inducedatthetopofthesubstratebeneaththegate.

MOSFET EnhancementType

AnNMOStransistorwithvGS >Vt andwithasmallvDS applied.Thedeviceactsasa conductancewhosevalueisdeterminedbyvGS.Specifically,thechannel conductanceisproportionaltovGS Vt,andthisiD isproportionalto(vGS Vt)vDS. Notethatthedepletionregionisnotshown(forsimplicity).

MOSFET EnhancementType

MOSFET EnhancementType

(a) AnnchannelenhancementtypeMOSFETwithvGS andvDS appliedandwith thenormaldirectionsofcurrentflowindicated.(b) TheiD vDS characteristicsfor adevicewithVt =1Vandkn(W/L) =0.5mA/V2.

ApplicationOfDMOSFETand EMOSFET
AmplifierCircuit AnalogSwitch Analog,digitalandswitchingCircuit PassiveloadSwitching ActiveloadSwitching CMOSInverter EMOSFETAmplifier DCtoACConverter DCtoDCConverter

FigureDraincurrentversusvGS inthesaturationregionfornchanneldevices.

TypesofMOSFET

FigurepChannelFETcircuitsymbols.Thesearethesameasthecircuitsymbolsfornchanneldevices, exceptforthedirectionsofthearrowheads.

FigureDraincurrentversusvGS forseveraltypesofFETs.iD isreferencedintothedrainterminal fornchanneldevicesandoutofthedrainforpchanneldevices.