Advanced Power MOSFET

FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 (Typ.)

SSH70N10A
BVDSS = 100 V RDS(on) = 0.023 ID = 70 A
TO-3P

1 2 3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)

Value 100 70 49.2

1 O

Units V A A V mJ A mJ V/ns W W/ C

Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C)

280 + _ 20 1633 70 30 6.5 300 2.0 - 55 to +175

O 1 O 1 O 3 O
2

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds

300

Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.5 -40

Units

C /W

Rev. B

1999 Fairchild Semiconductor Corporation

SSH70N10A

N-CHANNEL POWER MOSFET

Electrical Characteristics (TC=25 C unless otherwise specified)

Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(miller) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.12 ------53.51 850 375 22 24 112 84 151 31 66 --4.0 100 -100 10 100 0.023 -980 430 60 60 240 180 195 --nC ns A pF V V/ C V nA

Test Condition VGS=0V,ID=250 A ID=250 A See Fig 7 VDS=5V,ID=250 A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=35A VDS=40V,ID=35A
4 O 4 O

3750 4870

VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=70A, RG=5.3 See Fig 13 VDS=80V,VGS=10V, ID=70A See Fig 6 & Fig 12
4 O 5 O 4 O 5 O

Source-Drain Diode Ratings and Characteristics

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O

Min. Typ. Max. Units --------143 0.72 70 280 1.6 --A V ns C

Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=70A,VGS=0V TJ=25 C,IF=70A diF/dt=100A/ s
4 O

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=0.5mH, I AS=70A, V DD=25V, R G=27 , Starting T J =25 C O 3 ISD < _ 530A/ s, V DD< _ 70A, di/dt < _ BVDSS , Starting T J =25 oC O _2% Pulse Test : Pulse Width = 250 s, Duty Cycle < 4 O Essentially Independent of Operating Temperature 5 O

N-CHANNEL POWER MOSFET

Fig 1. Output Characteristics
VGS

SSH70N10A
Fig 2. Transfer Characteristics
[A] ID , Drain Current

[A]

Top :

102

ID , Drain Current

15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

102

175 oC

101

101 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS 3. 250 s Pulse Test 6 8 10

@ Notes : 1. 250 s Pulse Test 2. T = 25 oC C 100 10-1 100 101

- 55 oC 100

VDS , Drain-Source Voltage [V] [A]

VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

RDS(on) , [ ] Drain-Source On-Resistance
0 . 0 3 VGS = 10 V

Fig 4. Source-Drain Diode Forward Voltage

IDR , Reverse Drain Current

1 02

0 . 0 2

VGS = 20 V 0 . 0 1

1 01

1 7 5 oC 2 5 oC 1 00 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6

@N o t e s: 1 . VGS = 0 V 2 .2 5 0 s P u l s eT e s t 1 . 8 2 . 0 2 . 2 2 . 4 2 . 6

@N o t e : TJ 0 . 0 0 0 50 1 0 0 1 5 0 2 0 0

=2 5 oC 3 0 0

2 5 0

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

8 0 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd

Fig 6. Gate Charge vs. Gate-Source Voltage

[V]

[pF]

VGS , Gate-Source Voltage

Crss= Cgd 6 0 0 0 C iss

1 0

VDS = 2 0V 0V VDS = 5 V 0V DS = 8

Capacitance

4 0 0 0 C oss @N o t e s: 1 . VGS = 0 V 2 .f=1M H z

2 0 0 0

C rss

@N o t e s:I 7 0 . 0A D = 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

00 10

1 10

VDS , Drain-Source Voltage [V]

QG , Total Gate Charge [nC]

SSH70N10A
BVDSS , (Normalized) Drain-Source Breakdown Voltage

N-CHANNEL POWER MOSFET

Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0

Fig 7. Breakdown Voltage vs. Temperature

1.2

2.5

1.1

2.0

1.0

1.5

1.0 @ Notes : 1. V = 10 V GS 2. I = 35.0 A D 0.0 -75

0.9

@ Notes : =0V 1. V GS = 250 A 2. I D

0.5

0.8 -75

-50

-25

25

50

75

100

125

150

175

200

-50

-25

25

50

75

100

125

150

175

200

TJ , Junction Temperature [ oC]

TJ , Junction Temperature [ oC]

Fig 9. Max. Safe Operating Area

[A]
3 10

Fig 10. Max. Drain Current vs. Case Temperature

80

Operation in This Area is Limited by R DS(on) 10 s

ID , Drain Current

ID , Drain Current

[A]
60 100 s 1 ms 10 ms DC 40 20 102 0 25

2 10

1 10

0 10

@ Notes : = 25 oC 1. T C 2. T = 175 C J 3. Single Pulse

o

10-1 0 10

1 10

50

75

100

125

150

175

VDS , Drain-Source Voltage [V]

Tc , Case Temperature [ oC]

Fig 11. Thermal Response

100

Thermal Response

D=0.5 @ Notes : 1. Z J C (t)=0.5

10- 1

0.2 0.1 0.05 0.02

o C/W

Max.

/t2 2. Duty Factor, D=t 1 3. TJ M -TC =PD M *Z J C (t)

Z JC(t) ,

PDM
single pulse

10- 2

0.01

t1 t2

10- 5

10- 4

10- 3

10- 2

10- 1

100

101

t 1 , Square Wave Pulse Duration

[sec]

N-CHANNEL POWER MOSFET

Fig 12. Gate Charge Test Circuit & Waveform

SSH70N10A

Current Regulator
50K 12V 200nF 300nF

Same Type as DUT

VGS Qg
10V

VDS VGS DUT

3mA

Qgs

Qgd

R1
Current Sampling (I G) Resistor

R2
Current Sampling (I D) Resistor

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL Vout Vin RG DUT 10V Vin

10%

Vout VDD
( 0.5 rated V DS )

90%

td(on) t on

tr

td(off) t off

tf

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

LL VDS
Vary tp to obtain required peak ID

BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp

ID

RG DUT 10V
tp

ID (t) VDS (t) Time

SSH70N10A

N-CHANNEL POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS --

IS L Driver RG VGS
Same Type as DUT

VGS

VDD

dv/dt controlled by RG IS controlled by Duty Factor D

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode Forward Voltage Drop

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First Production

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