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LOYOLA ICAM

COLLEGE OF ENGINEERING AND TECHNOLOGY (LICET)


Loyola College Campus, Nungambakkam , Chennai 34
Branch: ECE Date: 28-04-2014
Semester: II Time: 8.00 - 11.00 a.m (3 Hrs)
MODEL EXAM
ELECTRONIC DEVICES (EC6201)

PART-A Answer all the Questions ( 6x2=12)
1. Briefly explain the Einstein relationship for a semiconductor.
2. The reverse saturation current of a silicon PN junction diode is 10A.Calculate the
diode current for the forward-bias voltage of 0.6V at 25C.
3. Discuss the base-width modulation and punch-through in a BJT?
4. A transistor has =100. If the collector current is 40mA, find the value of the emitter
current.
5. What is Pinch-Off in JFET.
6. Draw the small signal equivalent of a N-channel MOSFET.
7. What is Dark current?
8. List out the important properties of power BJTs.
9. Draw the equivalent circuit of a tunnel diode.
10. List out few applications of Varactor diode.

PART-B Answer all the Questions (5x16=80)

11. (i) 11. (i) Calculate the dynamic forward and reverse resistance of a PN junction
diode when the applied voltage is 0.25V at T=300K and I
0
=2A. (6)
(ii) With the help of switching diagram, explain the Junction diode switching
characteristics. (10)
OR
12. Explain the formation of PN junction and calculate the depletion width of the PN
junction under equilibrium with no applied potential. (16)




13. Draw the hybrid- model of a transistor and briefly discuss the hybrid-
conductances and capacitances. (16)
OR
14. (i) Discuss the Ebers-Moll Model of a PNP transistor (8)
(ii) Derive the relationship between the transistor current gains , and with
necessary theory. (8)

15. Explain the construction and operation of an N-Channel JFET with neat sketch. prove
that =r
d
x g
m
. (16)
OR
16. What is FinFET? Explain its construction and operation. (16)

17. What is tunneling? Discuss the operation of an Esaki diode and draw its equivalent
circuit. (16)
OR
18. Explain the forward and reverse bias characteristics of a Metal-Semiconductor
junction (16)

19. (i) Explain the construction of SCR. Design a half wave rectifier using SCR. (10)
(ii) A full wave rectifier employs 2 SCRs and 2 diodes in bridge configuration to
rectify 230V, 50 Hz AC and give an output of 150V to a load of 10. Find the
firing angle, the time during which the SCR remains OFF & the load current. (6)
OR
20. Discuss the basic structure of a charge couple device (CCD) and explain the charge
transfer in a three phase CCD. (16)

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