N-CHANNEL IGBT

SGH13N60UFD
FEATURES

TO-3P

* High Speed Switching

* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)

APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast

G
E

ABSOLUTE MAXIMUM RATINGS

Rating

Units

Collector-Emitter Voltage

600

VGES

Gate-Emitter Voltage

20

IC

Collector Current @ Tc = 25C

13

Collector Current @ Tc = 100C

6.5

ICM (1)

Pulsed Collector Current

52

IF

Diode Continuous Forward Current @ Tc = 100C

IFM

Diode Maximum Forward Current

56

PD

Maximum Power Dissipation @Tc = 25C

60

Maximum Power Dissipation @Tc = 100C

25

Symbol

Characteristics

VCES

Tj

Operating Junction Temperature

-55 ~ 150

Tstg

Storage Temperature Range

-55 ~ 150

TL

Maximum Lead Temp. For Soldering

300

Purposes, 1/8 from case for 5 seconds

Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature

Rev.B

1999 Fairchild Semiconductor Corporation

N-CHANNEL IGBT

SGH13N60UFD
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25C,Unless Otherwise Specified)
Symbol

Characteristics

Test Conditions

Min

Typ Max

Units

BVCES

C - E Breakdown Voltage

VGE = 0V , IC = 250uA

600

VCES/

Temperature Coeff. of

VGE = 0V , IC = 1mA

0.6

V/C

TJ

Breakdown Voltage

VGE(th)

G - E threshold voltage

IC = 6.5mA , VCE = VGE

4.0

5.5

7.5

ICES

Collector cutoff Current

VCE = VCES , VGE = 0V

250

uA

IGES

G - E leakage Current

VGE = VGES , VCE = 0V

100

nA

VCE(sat)

Collector to Emitter

Ic=6.5A, VGE = 15V

1.95

2.6

saturation voltage

Ic=13A, VGE = 15V

2.6

Cies

Input capacitance

VGE = 0V , f = 1MHz

375

pF

Coes

Output capacitance

VCE = 30V

63

pF

Cres

Reverse transfer capacitance

13

pF

td(on)

Turn on delay time

VCC = 300V , IC = 6.5A

15

nS

tr

Turn on rise time

VGE = 15V

26

nS

td(off)

Turn off delay time

RG = 50

50

80

nS

tf

Turn off fall time

Inductive Load

110

220

nS

Eon

Turn on Switching Loss

0.1

mJ

Eoff

Turn off Switching Loss

0.1

mJ

Ets

Total Switching Loss

0.2

0.3

mJ

Qg

Total Gate Charge

Vcc = 300V

25

37

nC

Qge

Gate-Emitter Charge

VGE = 15V

11

nC

Qgc

Gate-Collector Charge

Ic = 6.5A

12

nC

Le

Internal Emitter Inductance

Measured 5mm from PKG

14

nH

SGH13N60UFD

N-CHANNEL IGBT

ELECTRICAL CHARACTERISTICS (DIODE PART)

(Tc=25C,Unless Otherwise Specified)
Symbol

Characteristics

Test Conditions

Min
Min Typ

Max Units

1.4

1.7

1.3

Diode Reverse

Tc =25C

37

55

Recovery Time

Trr

Tc =25C
Tc =100C

VFM

Tc =100C

55

Diode Forward Voltage

IF=8.0A

IF=8.0A, VR=200V

Tc =25C

3.5

5.0

-di/dt=200A/uS

Tc =100C

4.5

Diode Reverse

Tc =25C

65

138

Tc =100C

124

nS

Recovery Charge

Qrr

Diode Peak Reverse

Recovery Current

Irr

nC

THERMAL RESISTANCE
Symbol

Characteristics

Min

Typ

Max

Units

RJC

Junction-to-Case (IGBT)

2.0

C/W

RJC

Junction-to-Case (DIODE)

3.5

C/W

RJA

Junction-to-Ambient

40

C/W

RCS

Case-to-Sink

0.24

C/W

N-CHANNEL IGBT

SGH13N60UFD
12

50
Vcc = 300V
Load Current : peak of square wave

40

Tc = 25

Load Current [A]

Tc = 100

Ic [A]

30
6

20

3
10
Duty cycle : 50%
Tc = 100
Power Dissipation = 14W

0
0.1

0
1

10

100

1000

Fig.1 Typical Load Current vs. Frequency

14

10

Vce [V]

Frequency [kHz]

Fig.2 Typical Output Characteristics

3.2

Vge = 15V

Ic = 13A

3.0

12

2.8

2.6

Vce(sat) [V]

Max DC Current [A]

10

2.4

2.2
4

Ic = 6.5A

2.0

1.8

1.6

0
25

50

75

100

125

Tc [ ]

Fig.3 Maximum Collector Current vs.

Case Temperature

150

20

40

60

80

]

100

120

140

Tc [

Fig.4 Collector to Emitter Voltage vs.

Case Temperature

N-CHANNEL IGBT

SGH13N60UFD

T hermal Response [Zthjc]

10

0 .5

0 .2
0 .1
0 .0 5

Pdm

0 .1

t1

0 .0 2

t2

0 .0 1

Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc

s ingle puls e
0 .0 1
0 .0 0 0 0 1

0 .0 0 0 1

0 .0 0 1

0 .0 1

0 .1

10

Rectangular Pulse Duration [sec]

Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case

600

18
Vcc = 300V
Ic = 6.5A
16

500
14
Cies

12

V GE [V]

Capacitance [pF]

400

300

200

10

Coes

100
2
Cres
0

0
1

10

Vce [V]

Fig.6 Typical Capacitance vs.

Collector to Emitter Voltage

10

15

Qg [nC]

Fig.7 Typical Gate Charge vs.

Gate to Emitter Voltage

20

25

N-CHANNEL IGBT

SGH13N60UFD
1.8

500

Vcc = 300V
Ic = 6.5A

Vcc = 300V
Rg =50
Vge = 15V

1.6

Ic =13A

Esw

400

1.4

Energy [mJ]

Energy [uJ]

1.2
300

Eon

200

1.0

0.8
Ic = 6.5A
0.6

Eoff
0.4

100

Ic = 3A
0.2

+]

100

200

0.0
300

400

20

]

40

60

80

100

Tc [

Rg [

Fig.9 Typical Switching Loss vs.

Case Temperature

Fig.8 Typical Switching Loss vs.

Gate Resistance
0.7

100
Vcc = 300V
Rg =50
Tc = 100

0.6

Esw

0.4

Ic [A]

Energy [mJ]

0.5

Eoff

10

0.3
Eon
0.2

0.1

Safe Operating Area

Vge = 20V, Tc = 100

0.0

1
4

10

Ic [A]

Fig.10 Typical Switching loss vs.

Collector to Emitter Current

12

10

100

Vce [V]

Fig.11 Turn-off SOA

1000

N-CHANNEL IGBT

SGH13N60UFD
100

100

VR = 200V
IF = 8A

10

60

Tc = 100

Trr [ns]

Forward Current IF [A]

80

Tc = 100

40

Tc = 25

Tc = 25

20

0.1
0

100

1000

-di/dt [A/us]

Forward Voltage Drop V F [V]

Fig.12 Typical Forward Voltage Drop

vs. Forward Current

Fig.13 Typical Reverse Recovery Time

vs. di/dt

100

500
VR=200V

VR = 200V

IF=8A

IF = 8A

450
400
350

Tc = 100

Qrr [nC]

I rr - [A]

Tc=100
300

10

250
200

Tc = 25

Tc=25
150
100
50

1
100

-di/dt [A/us]

1000

Fig.14 Typical Reverse Recovery Current

vs. di/dt

0
100

-di/dt [A/us]

Fig.15 Typical Stored Charge vs. di/dt

1000

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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failure to perform when properly used in accordance
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Advance Information

Formative or
In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without
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First Production

This datasheet contains preliminary data, and supplementary data

will be published at a later data.
Fairchild Semiconductor reserves the right to make changes at any
time without notices in order to improve design.

No Identification Needed

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This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice in
order to improve design.

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This datasheet contains specifications on a product that has been

discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.