IRF1010E

HEXFET

Power MOSFET
PD - 9.1670B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
V
DSS
= 60V
R
DS(on)
= 0.012
I
D
= 81AU
TO-220AB
Advanced Process Technology
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
11/10/97
Parameter Max. Units
I
D
@ T
C
= 25C Continuous Drain Current, V
GS
@ 10V 83U
I
D
@ T
C
= 100C Continuous Drain Current, V
GS
@ 10V 59 A
I
DM
Pulsed Drain Current Q 330
P
D
@T
C
= 25C Power Dissipation 170 W
Linear Derating Factor 1.1 W/C
V
GS
Gate-to-Source Voltage 20 V
E
AS
Single Pulse Avalanche EnergyR 320 mJ
I
AR
Avalanche CurrentQ 50 A
E
AR
Repetitive Avalanche EnergyQ 17 mJ
dv/dt Peak Diode Recovery dv/dt S 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
JC
Junction-to-Case 0.90
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 C/W
R
JA
Junction-to-Ambient 62
Thermal Resistance
IRF1010E
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 V V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient 0.06 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance 0.012 V
GS
= 10V, I
D
=50A T
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance 36 S V
DS
= 25V, I
D
=50A
25
A
V
DS
= 60V, V
GS
= 0V
250 V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 116 I
D
= 50A
Q
gs
Gate-to-Source Charge 23 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge 47 V
GS
= 10V, See Fig. 6 and 13 T
t
d(on)
Turn-On Delay Time 12 V
DD
= 30V
t
r
Rise Time 90 I
D
= 50A
t
d(off)
Turn-Off Delay Time 41 R
G
= 3.6
t
f
Fall Time 71 R
D
= 0.6, See Fig. 10 T
Between lead,

6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 2800 V
GS
= 0V
C
oss
Output Capacitance 880 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 290 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Q Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
S I
SD
50A, di/dt 260A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
R Starting T
J
= 25C, L = 260H
R
G
= 25, I
AS
= 50A. (See Figure 12)
T Pulse width 300s; duty cycle 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)

showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) Q

p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25C, I
S
=50A, V
GS
= 0V T
t
rr
Reverse Recovery Time 70 110 ns T
J
= 25C, I
F
= 50A
Q
rr
Reverse Recovery Charge 200 300 nC di/dt = 100A/s

T
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
83U
333
A
U Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRF1010E
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
4 5 6 7 8 9 10
T = 25C J
GS
V , Gate-to-Source Vol tage (V)
D
I



,

D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
T = 175C
J
A
V = 25V
20s PULSE W IDTH
DS
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R












,

D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

O
n

R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
J
D
S
(
o
n
)

V =
I =
GS
D
10V
50A
1
10
100
1000
0.1 1 10 100
20s PULSE WIDTH
T = 25 C J

TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I



,


D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20s PULSE WIDTH
T = 175 C J

TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I



,


D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
DS
D
4.5V
IRF1010E
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C

J
C
V , Drain-to-Source Voltage (V)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
1 10 100
C
,

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
10
100
1000
0. 4 0. 8 1. 2 1. 6 2. 0 2. 4 2. 8
T = 25C J
V = 0V GS
V , Source-to-Drain Voltage (V)
I





,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
SD
S
D
A
T = 175C
J
0 20 40 60 80 100 120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V





,

G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
G
G
S
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
50 A
V = 30V
DS
V = 48V
DS
IRF1010E
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150 175
0
15
30
45
60
75
90
T , Case Temperature ( C)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)

C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
(
Z








)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF1010E
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01 t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E





,

S
i
n
g
l
e

P
u
l
s
e

A
v
a
l
a
n
c
h
e

E
n
e
r
g
y

(
m
J
)
J
A
S

I
D
TOP
BOTTOM
20A
35A
50A
IRF1010E
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+ -
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
S
T
R
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
Q
*
IRF1010E
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 ( .185)
4.20 ( .165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 ( .149)
3.54 ( .139)
- A -
10.54 (.415)
10.29 (.405)
2.87 ( .113)
2.62 ( .103)
15.24 ( .600)
14.84 ( .584)
14.09 ( .555)
13.47 ( .530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
PART NUMBER
INTERNATIONAL
RECTI FIER
LOGO
EXAMPLE : THIS IS AN IRF1010
WI TH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYW W)
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
I NTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THI S IS AN IRF1010
WI TH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97