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State-of-the-Art
Solid State Pulse Modulators
Jrgen Biela
S. Blume, D. Gerber, M. Jaritz & C. Carstensen
Focus Application Areas
High Power Laboratory - Facilities
! 3 keconhgurab|e Iaraday 1est Ce||s
3 keconhgurab|e Ience-1est Ce||s
! Max. Ce|| S|ze: S7m
2
! Sources:
" 0..400V]800V 2S0kVA
" 0..2SkV
AC
2S0kVA
" 0..3SkV
DC
2S0kW
" 0..2kV
DC
100kW ]1.2kA
(8|d|recnona|)

! 1S0kW Water Coo||ng
! 2 x 30kW A|r Coo||ng
! 2t Crane
Pulse Modulator Basic Topologies
Pulsed Power / Pulse Length for typical Applications
Collaboration:
- Ampegon, PPT,
ABB, Lasslop
- PSI & CERN
1) 8as|c concepts
2) Short pu|se modu|ator
- Matr|x transformer
- remagnensanon
- 8ouncer ] Gate un|t
- rec|se Charg|ng
3) M|d range modu|ator
- Acnve bouncer
4) Long pu|se modu|ator
- 8as|c concept
- Des|gn of a modu|e

1yp|ca| topo|ogy of a so||d state pu|se modu|ator
- AC]DC recnher un|t
- DC]DC converter for charg|ng C-bank ] vo|tage adapnon
- u|se generanon un|t
- Load e.g. k|ystron
Typical Topology 0f a Solid State Pulse Generator System
1yp|ca| topo|ogy of a so||d state pu|se modu|ator
- Iso|anon w|th S0nz transformer or
- Iso|ated DC-DC converter
Typical Topology 0f a Solid State Pulse Generator System
Solid State Switches
! S|mp|e concept, but h|gh no of sw|tches
! n|gh vo|tage supp|y requ|red
! Vo|tage ba|anc|ng of sw|tches requ|red
# keducnon of sw|tch operanng vo|tage
# Add|nona| |osses (ba|anc|ng c|rcu|t + h|gh no of sw|tches)
# aras|nc osc|||anons poss|b|e
! Iso|ated gate-dr|ves]supp||es requ|red
! L|m|tanon of short c|rcu|t current |s cr|nca| (! requ|red)
! Sw|tch needs to be synchron|zed
! Var|ab|e pu|se |ength poss|b|e
Modulator with High Voltage Switch
! Vo|tage pu|se by add|ng capac|tor vo|tages
! Var|ab|e pu|se vo|tage and arb|trary |ength poss|b|e
! Synchronous tr|gger|ng of sw|tches NC1 requ|red
# Improved robustness
! Iso|ated gate-dr|ves ] gate-supp||es
Modular: Marx-Type
Modular: Marx-Type Pulse Generation
! Vo|tage pu|se by add|ng capac|tor vo|tages
! Var|ab|e pu|se vo|tage and arb|trary |ength poss|b|e
! Synchronous tr|gger|ng of sw|tches NC1 requ|red
# Improved robustness
! Iso|ated gate-dr|ves ] gate-supp||es
! rob|em: Lnergy |n case of short c|rcu|t (! requ|red ] b|po|ar Marx)
! Vo|tage pu|se by add|ng capac|tor vo|tages
! Var|ab|e pu|se vo|tage of arb|trary |ength poss|b|e
! Synchronous tr|gger|ng of sw|tches NC1 requ|red
# Improved robustness
! Iso|ated gate-dr|ves ] gate-supp||es
! rob|em: Lnergy |n case of short c|rcu|t (! requ|red ] b|po|ar Marx)
! Capac|tor charg|ng v|a res|stor]|nductor
! aras|ncs # Csc|||anons poss|b|e
Modular: Marx-Type Charging I
Modular: Marx-Type Charging II
! Vo|tage pu|se by add|ng capac|tor vo|tages
! Var|ab|e pu|se vo|tage of arb|trary |ength poss|b|e
! Synchronous tr|gger|ng of sw|tches NC1 requ|red
# Improved robustness
! Iso|ated gate-dr|ves ] gate-supp||es
! rob|em: Lnergy |n case of short c|rcu|t (! requ|red ] b|po|ar Marx)
! Capac|tor charg|ng v|a res|stor]|nductor or sw|tch]d|ode (# Long pu|ses)
! aras|ncs # Csc|||anons poss|b|e
Modular: Marx-Type + PWM Cell
! Vo|tage pu|se by add|ng capac|tor vo|tages
! Var|ab|e pu|se vo|tage of arb|trary |ength poss|b|e
! Synchronous tr|gger|ng of sw|tches NC1 requ|red
# Improved robustness
# Droop compensanon ] pu|se shap|ng (WM)
! Iso|ated gate-dr|ves ] gate-supp||es
! rob|em: Lnergy |n case of short c|rcu|t (! requ|red ] b|po|ar Marx)
! Capac|tor charg|ng v|a res|stor]|nductor or sw|tch]d|ode (# Long pu|ses)
! aras|ncs # Csc|||anons poss|b|e
! n|gh pu|se vo|tage |s generated by transformer
! Adapnon to sw|tch operanng vo|tage poss|b|e
! Ser|es and]or para||e| operanon of sw|tches
! Ser|es: Vo|tage ba|anc|ng
! ara||e|: Current ba|anc|ng
# No of sw|tches reduced
# Separate gate dr|ves
! r|mary vo|tage does NC1 |nuence pu|se shape
! u|se |ength |s ||m|ted by transformer
Pulse Transformer Based
! Separate w|nd|ngs]transformers per sw|tch
# Vo|tage]current ba|anc|ng |s ach|eved
! Name: "#$%& ()*+ ] ,-&*%. /*-012)*3+* ] 4056789+ :55+* (same bas|c concept)
# Iurther deta||s: Later
Pulse Transformer Based Matrix Transformer
DC-DC Converter Based
! Add|ng output vo|tage of |so|ated DC-DC converters
- ara||e| |n ] ser|e| out
# Compact transformer (nI sw|tch|ng)
! u|se r|se nme re|anve s|ow
# Su|tab|e for |ong pu|ses (typ. > 1ms)
! Sma|| C-bank poss|b|e (Droop compensanon)
! u|se shap|ng poss|b|e

DC-DC Converter Based PSM Modulator
! Add|ng output vo|tage of non-|so|ated DC-DC converters
# Generate pr|mary vo|tage for transformer
! u|se r|se nme re|anve s|ow
# Su|tab|e for |ong pu|ses (typ. > 1ms)
! u|se |ength ||m|ted by pu|se transformer
! u|se shap|ng poss|b|e


Topology Comparison
D|rect Modu|ator Marx 1ype Matr|x u|se 1rafo DC-DC Converter
1ransformer 8ased
Arb|trary u|se Length Arb|trary Length
Iast k|se 1|me
Inherent Short C|rcu|t Current L|m|tanon
Adapnon to Sw|tch Cperanon Vo|tage
ower L|ectron|cs on Low Vo|tage
No Sync of Sem|conductors or Modu|es necessary
n|gh number of Sw|tches n|gh # of Sw|tches
127MW/370kV/3!s
Solid State Modulator
with
Ultra High Precision
Short Pulse Modulator
(~ !s-range)
SwissFEL # Seminar: Swiss FEL this evening by Dr. Braun
! Iree e|ectron |aser # k-kays
! L|ectron beam energy S.8GeV
! kepennon rate 100nz
! 1ota| e|ectr|c power SMW
! Wave|ength range 1 to 70
127 MW Solid-State Modulator
! DC supp|y vo|tage ;
<(
= 3kV 30mV
! Cutput vo|tage ;
!
= 370kV
! Cutput power =
=>:?
= 127MW
! Average power =
:;@
= 36kW
! u|se |ength /
=A!">
= 3s
! kepennon rate 2
=A!">
= 100nz-1knz
! Ia|| nme /
B:!!
< 1s
! Vo|tage drop !;
/=
< 1
! kepennon accuracy < 10
-S
Fall
Time
Droop: 1
Maximum Pulse Width:
Amplitude at 76: 6.2s
Positive Voltage:
max. 40kV
Flat Top: 3s
Short Pulse Solid State Power Modulator
Matrix Transformer Concept
Matrix Transformer Basic Concept I
! Separate pr|mary w|nd|ngs:
- Inherent current ba|anc|ng
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Matrix Transformer Basic Concept I
! Separate pr|mary w|nd|ngs:
- Inherent current ba|anc|ng
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Matrix Transformer Basic Concept II
! Separate pr|mary w|nd|ngs:
- Inherent current ba|anc|ng
- 2 w|nd|ngs + 2 cores
# Ser|es connecnon on secondary s|de
- Secondary turns # C
"
]2
C
"
]2
Matrix Transformer Leakage Inductance
! Leakage |nductance !
D
:
- S|ower r|se nme
- Cvershoot (Csc|||anon)
# Lower emc|ency
! Ca|cu|anon of !
D
:
- Magnenc he|d between w|nd|ngs
- Lnergy stored |n he|d = Lnergy |n !
D
! !
D
depends on:
- Vo|ume between w|nd|ngs
- Number of turns
L
!
~
0
N
2
l
W
l
h
1
3
+d +
h
2
3
!
"
#
$
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Matrix Transformer Basic Concept II
C
"
]2
L
!,Matrix
~ 2Vol
N
2
!
"
#
$
%
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2
~
L
!,Old
2
! Separate pr|mary w|nd|ngs:
- Inherent current ba|anc|ng
- 2 w|nd|ngs + 2 cores
# "V|rtua| ser|es connecnon"
- Secondary turns # C
"
]2
! Advantages:
- C
"
]2 # Leakage |nductance $
- No ser|es]para||e| connected IG81s
! D|sadvantages:
- Doub||ng of core vo|ume
Matrix Transformer "Cross Conduction"
! rob|em: Non synchronous sw|tch|ng (e.g. "
,EF
de|ayed)
- 1urn on of "
,EG
: Induces ux H
G
- H
G
|nduces vo|tage |n secondary (;]2)
- Current 4
1+I
ows |n secondary
- Current 4
1+I
|nduces ux H
F

- H
F
|nduces vo|tage |n pr|mary 2
- D|ode <
2EF
starts to conduct (4
#*%EF
)
- 1urn on of sw|tch "
,EF

# nard commutanon of d|ode <
2EF

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Matrix Transformer "Cross Conduction" Additional Winding
!
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! rob|em: Non synchronous sw|tch|ng (e.g. "
,EF
de|ayed)
- 1urn on of "
,EG
: Induces ux H
G
- H
G
|nduces vo|tage |n secondary (;]2)
- Current 4
1+I
ows |n secondary
- Current 4
1+I
|nduces ux H
F

- H
F
|nduces vo|tage |n pr|mary 2
- D|ode <
2EF
starts to conduct (4
#*%EF
)
- 1urn on of sw|tch "
,EF

# nard commutanon of d|ode <
2EF
! So|unons:
- Cross w|nd|ngs
or beuer:
- Synchron|zed sw|tch|ng
(Sma|| de|ay |s o.k.)

Matrix Transformer Winding Shape
w
! W|nd|ng shape:
- ara||e|
# Large vo|ume between r|]Sec
# Large |eakage |nductance
- Cone shape
# Large d|stance Q h|gh vo|tage
# Vo|ume ] 2 -> Leakage ] 2
L
!
~
0
N
2
l
W
l
h
1
3
+d +
h
2
3
!
"
#
$
%
&
~ Vol N
2
V
V
Matrix Transformer Parallel Secondary Windings
! ara||e| secondary w|nd|ng:
- ara||e| |eakage |nductance
# Leakage ] 2
- Cset vo|tage poss|b|e
# Cathode heanng Q h|gh potenna|
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Matrix Transformer 2 IGBTs on 1 Core
! u|sed power per sw|tch: app. 10-11MW
- 1ota| power: 127MW
# 12 sw|tches
# 12 cores
# Large vo|ume ] we|ght
! # 2 separate sw|tches per core
- "er core" 20-22MW
# 6 cores
- Current shar|ng of 2 sw|tches per core
# Synchron|zanon
# Separate capac|tors
# Leakage |nductance
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Cn|y 2 out of tota|
6 cores are shown
! rob|em: Non synchronous sw|tch|ng
! So|unons:
- Synchron|zed sw|tch|ng
# Detecnon of
Ldges
eak current

R
L Gate
drive
C
1
S
1
P
1
D
1
Gate
drive
C
2
S
2
P
2
D
2
Gate
drive
C
3
S
3
P
3
D
3
Gate
drive
C
4
S
4
P
4
D
4
S
Evaluation Electronics
To detect: - Rise and fall times
- Overcurrent
- Peak current
FPGA
DSP
I
G
B
T

C
u
r
r
e
n
t
t
r1
t
r2
t
r4
t
r3
t
f1
t
f3
t
f2
,t
f4
I
trig
i
c1
(t)
i
c2
(t)
i
c3
(t)
i
c4
(t)
G
a
t
e

v
o
l
t
a
g
e
Time
Slmplled CurrenL Waveforms
Matrix Transformer Switch Synchronisation
I
G
B
T

C
u
r
r
e
n
t
t
r
t
f
G
a
t
e

v
o
l
t
a
g
e
Time
i
p
T
Trig
i
c1
(t)
i
c2
(t)
i
c3
(t)
i
c4
(t)
! rob|em: Non synchronous sw|tch|ng
! So|unons:
- Synchron|zed sw|tch|ng
# Detecnon of
Ldges
eak current
# Synchronous turn on
# os|nve temp. coemc|ent -> Stanc ba|anc|ng
# "Separate" DC capac|tors -> Stanc ba|anc|ng

R
L Gate
drive
C
1
S
1
P
1
D
1
Gate
drive
C
2
S
2
P
2
D
2
Gate
drive
C
3
S
3
P
3
D
3
Gate
drive
C
4
S
4
P
4
D
4
S
Evaluation Electronics
To detect: - Rise and fall times
- Overcurrent
- Peak current
FPGA
DSP
Matrix Transformer Switch Synchronisation
Slmplled CurrenL Waveforms
127MW Matrix Transformer Setup
! Matr|x transformer
! 12 IG81s ] 6 cores
! 12 pr|mary w|nd|ngs
! 2 para||e| secondary w|nd|ngs
! Current ba|anced between cores

Short Pulse Solid State Power Modulator
Pulse Transformer Design
! L|ectr|ca| he|ds # aras|nc capac|tances
! Genera| equ|va|ent c|rcu|t: 6 capac|tors
Pulse Transformer: Parasitic Capacitances

circuit shown in figure 11(a) which is similar to the equivalent
circuit 12.6 in [1]. Neglecting the parallel resonance between the
leakage and capacitor C
4
this circuit could be further simplified to
the circuit shown in figure 11(b), where only one capacitor is
used which is transferred to the secondary side.
The capacitance value for the equivalent capacitor referred to
the secondary side is

2
1 6 4
2 5
2 2
2 4 5
( 1)
( )
~ for large
d
d
C C C N
C C C
N N
C C C C N
+ !
= + + +
" + +
(21)
The circuit of figure 11(b) is the same as used in [1, 2] but in
those publications no equation for calculating the equivalent
capacitance C
d
from the geometry of the transformer was given
except for the simple parallel plate approach for the region
between the windings.
4 DETERMINATION OF THE EQUIVALENT
CIRCUIT BY FEM-SIMULATION OR
MEASUREMENT
Besides the presented possibility to calculate the values of the six
capacitors of the general equivalent circuit (cf. fig. 9) by means of
the transformer geometry it is also possible to obtain the values
by measurement or by FEM-simulation.
Since there are six independent capacitors in the equivalent
circuit, six independent simulations / measurements must be
carried out. The belonging measurement setups are shown in
figure 12.
For the measurement results following below the values of the
capacitances have been determined by using resonance peaks in
the impedance plot. The required inductance values are directly
measured with an impedance analyzer Agilent 4294A and then
the capacitances are calculated with the frequency of the
resonance peak.

( ) ( )
( ) ( )
( ) ( )
1 2 3 4 6 2 1 3 4
3 2 3 5 4 1 3 5 6
5 4 5 6 6 1 2 4 5
1 1
= =
2 2
1 1
= =
2 2
1 1
= =
2 2
M M M M M M M
M M M M M M M
M M M M M M M
C C C C C C C C C
C C C C C C C C C
C C C C C C C C C
! ! + ! + +
! + + ! ! +
+ ! + ! !
(22)
With the measured capacitances the values of the equivalent
capacitors of the circuit in figure 10 could be calculated by the
following equations (cf. figure 13).
Instead of measuring the capacitances with an impedance
analyzer, the same setups could be used for determining the
capacitances by FEM-simulations. There, either 3D simulations,
which are quite accurate but very time consuming, or 2D
simulations as shown in figure 14, which are much faster but less
accurate, could be performed. The equivalent capacitors could be
calculated with the same equations (22) as used for the
measurements.

5 MEASUREMENT RESULTS
In order to verify the presented equations measurements at the
pulse transformers shown in figure 15 excited by the solid state
modulator shown in figure 16 have been carried out. The
measurements have been conducted at relatively low voltage
(<2kV) so that very fast and accurate probes could be used and
measurement errors related to voltage dividers could be
A
C
V
Pri
B
V
Sec
D
-64.5pF
-12pF
17.5pF
145pF
52.5pF
202pF
1.74!H
191!H
1:10

Figure 13. Calculated equivalent circuit for the transformer in figure 14(b).
A
B C
D
V
2
L
!
L
m
C
1
+C
6
C
4
C
2
+C
5
V
1
A
B C
D
V
2
L
!
L
m
C
d
V
1
a) b)

Figure 11. (a) Simplified equivalent circuit (cf. fig.10). (b) Approximated
simplified circuit with capacitances transferred to secondary side.
Measurement 1

Measurement 2

Measurement 3


Measurement 4

Measurement 5

Measurement 6

Figure 14. 2D FEM-simulations for a transformer with non parallel-plate
windings (cf. figure 15(b)).
V
m
V
m
V
m
V
m
C
1
C
2
C
3
C
4
C
6
C
5
M
C
1
C
2
C
3
C
4
C
6
C
5
M
C
1
C
2
C
3
C
4
C
6
C
5
M
C
1
C
2
C
3
C
4
C
6
C
5
M
C
1
C
2
C
3
C
4
C
6
C
5
M
C
1
C
2
C
3
C
4
C
6
C
5
M
V
m
V
m

Figure 12. Measurements for determining the equivalent capacitances.

arrangement. The structure of the winding and the core act like a
parallel plate capacitor with two different dielectrics the oil and
the coil former of the primary winding as shown in figure 9(b).
Assuming a linear voltage distribution again, the voltage
distribution, the distance and the permittivity are

1 , ,
, ,
, ,
( ) ( )
( )
Oil P Iso P
W
Iso Oil Iso P Oil P
eq
Iso Oil P Oil Iso P
x
V x V d x d d
h
d d
d d
! !
!
! !
= = +
+
=
+
(16)
and the energy could be calculated by

( )
, , 2
6 1 6
, ,
( )
1
6
Iso Oil Iso P Oil P W
R R
Iso Oil P Oil Iso P CP
d d h
W V l
d d d
! !
! !
+
=
+
. (17)

2.7 WINDING CAPACITANCE
So far, only the stored energy/capacitances between the
windings or between one winding and the core/tank have been
considered. But also between the singe turns of one winding
electric energy is stored. This energy could be calculated by
approaches presented in [5-7].
Due to fact that the windings are usually implemented with
only one / two layers and the turn to turn voltage is relatively
small as well as the distance between the single turns is relatively
large due to the insulation this part of the stored energy usually
could be neglected.
3 EQUIVALENT CIRCUIT OF A PULSE
TRANSFORMER
In the last preceding section the energies stored in the different
regions of the pulse transformer/tank setup have been calculated.
In the next step the parameters of the equivalent circuit of this
setup are calculated. This is performed by comparing the energy
stored in the equivalent circuit, which is a function of the
independent voltages V
1
-V
3
, with the calculated stored energy,
which is also a function of V
1
-V
3
(V
4
=V
2
+V
3
-V
1
). For determining
the energy stored in the equivalent circuit, first an appropriate
equivalent circuit must be chosen.
As could be shown the electrostatic behavior of an arbitrary
transformer could be modeled by a three input multipole (primary
and secondary voltage and the voltage between the windings) [3].
In the linear working area and as long as propagation times can be
ignored, the electrostatic energy / behavior of this multipole could
be modeled by six independent capacitors as shown in figure 10.
The energy stored in the equivalent circuit is given by

( )
( ) ( )
2
2 2 2
1 1 2 2 3 3 4 2 3 1
Eq
2 2
5 2 3 6 1 3
1
2
CV C V CV C V V V
W
C V V C V V
! "
+ + + + #
$ %
=
$ %
+ + + #
& '
(18)
what results from
2
1 2
C
CV . In the same manner the calculated
energy stored in the different regions of the setup in figure 2
could be written

( )
1 2 3 4 5 6
1 2 3
2
( , , ),
Cal R R R R R R
W W W W W W W
f V V V
= + + + + +
=
(19)
where V
4
has been replaced by V
4
= V
2
+V
3
-V
1
and the factor 2
results from the fact that the energies have been calculated for
each leg separately.
Since both energies must be equal W
Eq
=W
Cal
the equations of
the capacitors can be derived by setting the coefficients of the
variables/voltage terms V
1
, V
2
, V
3
, V
1
V
2
, V
1
V
3
and V
2
V
3
equal.
This results in six independent equations which can be solved for
the capacitances C
1
-C
6
.

In contrast to the results published in [3] the capacitors C
1
/C
2
,
C
3
/C
4
and C
5
/C
6
are not interdependent for the non parallel-plate
winding since the windings are not arranged in parallel and
therefore the winding construction is not symmetric with respect
to the low and the high side.
With the described model the transfer behavior of the pulse
transformer and therewith the influence on the transferred pulse
shape could be calculated and/or simulated for arbitrary
connections. Moreover, with the equations relating the geometry
of the transformer directly with the capacitances of the equivalent
model the construction of the transformer could be optimized for
the required transfer behavior. There, the load and the source
impedance must be connected to the presented equivalent circuit
in order to predict the overall transfer behavior [1].
3.1 SIMPLIFIED CIRCUIT WITH NEW EQUATIONS
In many pulse power applications the pulse transformer is not
used for galvanic isolation and the low side of the primary as well
as the low side of the secondary winding are grounded, i.e. V
3
= 0
in figure 10. In this case capacitor C
3
is replaced by a short circuit
and C
1
/C
6
as well as C
2
/C
5
are in parallel. Moreover, the voltages
across all capacitors could be derived from the primary and/or
secondary voltage by using the turns ratio N. With the voltages
known the energy which is stored in the capacitors could be
calculated as a function of the secondary (or primary) voltage.

2 2
2 2 1 6 4 2 5
2 2
( 1) ( )
2 2
d
C C C N C C N C
W V V
+ + ! + +
= = (20)
Furthermore, the equivalent circuit could be simplified to the
d
h
E-field
x
core
p
r
i
m
a
r
y
s
e
c
o
n
d
a
r
y
V
1
V
2
w
2
V
3
V
3
+
d
0
V
4
V(x)
a)

d
h
E-field
x
0V
core
p
r
i
m
a
r
y
V
1
w
d
d
Oil
iso
CP
b)

Figure 9. (a) Variables / simplified run of electric flux lines for region R
5
.
(b) Definition of variables for region R
6.

A
B
C
D
C
1
C
2
C
3
C
4
C
6
C
5
M
V
1
V
2
V
3

Figure 10. General equivalent circuit of pulse transformer.

circuit shown in figure 11(a) which is similar to the equivalent
circuit 12.6 in [1]. Neglecting the parallel resonance between the
leakage and capacitor C
4
this circuit could be further simplified to
the circuit shown in figure 11(b), where only one capacitor is
used which is transferred to the secondary side.
The capacitance value for the equivalent capacitor referred to
the secondary side is

2
1 6 4
2 5 2 2
2 4 5
( 1)
( )
~ for large
d
d
C C C N
C C C
N N
C C C C N
+ !
= + + +
" + +
(21)
The circuit of figure 11(b) is the same as used in [1, 2] but in
those publications no equation for calculating the equivalent
capacitance C
d
from the geometry of the transformer was given
except for the simple parallel plate approach for the region
between the windings.
4 DETERMINATION OF THE EQUIVALENT
CIRCUIT BY FEM-SIMULATION OR
MEASUREMENT
Besides the presented possibility to calculate the values of the six
capacitors of the general equivalent circuit (cf. fig. 9) by means of
the transformer geometry it is also possible to obtain the values
by measurement or by FEM-simulation.
Since there are six independent capacitors in the equivalent
circuit, six independent simulations / measurements must be
carried out. The belonging measurement setups are shown in
figure 12.
For the measurement results following below the values of the
capacitances have been determined by using resonance peaks in
the impedance plot. The required inductance values are directly
measured with an impedance analyzer Agilent 4294A and then
the capacitances are calculated with the frequency of the
resonance peak.

( ) ( )
( ) ( )
( ) ( )
1 2 3 4 6 2 1 3 4
3 2 3 5 4 1 3 5 6
5 4 5 6 6 1 2 4 5
1 1
= =
2 2
1 1
= =
2 2
1 1
= =
2 2
M M M M M M M
M M M M M M M
M M M M M M M
C C C C C C C C C
C C C C C C C C C
C C C C C C C C C
! ! + ! + +
! + + ! ! +
+ ! + ! !
(22)
With the measured capacitances the values of the equivalent
capacitors of the circuit in figure 10 could be calculated by the
following equations (cf. figure 13).
Instead of measuring the capacitances with an impedance
analyzer, the same setups could be used for determining the
capacitances by FEM-simulations. There, either 3D simulations,
which are quite accurate but very time consuming, or 2D
simulations as shown in figure 14, which are much faster but less
accurate, could be performed. The equivalent capacitors could be
calculated with the same equations (22) as used for the
measurements.

5 MEASUREMENT RESULTS
In order to verify the presented equations measurements at the
pulse transformers shown in figure 15 excited by the solid state
modulator shown in figure 16 have been carried out. The
measurements have been conducted at relatively low voltage
(<2kV) so that very fast and accurate probes could be used and
measurement errors related to voltage dividers could be
A
C
VPri
B
VSec
D
-64.5pF
-12pF
17.5pF
145pF
52.5pF
202pF
1.74!H
191!H
1:10

Figure 13. Calculated equivalent circuit for the transformer in figure 14(b).
A
B C
D
V2
L!
Lm
C1+C6
C4
C2+C5
V1
A
B C
D
V2
L!
Lm
Cd
V1
a) b)

Figure 11. (a) Simplified equivalent circuit (cf. fig.10). (b) Approximated
simplified circuit with capacitances transferred to secondary side.
Measurement 1

Measurement 2

Measurement 3


Measurement 4

Measurement 5

Measurement 6

Figure 14. 2D FEM-simulations for a transformer with non parallel-plate
windings (cf. figure 15(b)).
V
m
V
m
V
m
V
m
C
1
C
2
C3
C4
C
6
C
5
M
C
1
C
2
C3
C4
C
6
C
5
M
C1 C2
C
3
C
4
C6
C5
M
C
1
C
2
C
3
C4
C
6
C
5
M
C1 C2
C3
C
4
C6
C5
M
C
1
C
2
C
3
C4
C
6
C
5
M
V
m
V
m

Figure 12. Measurements for determining the equivalent capacitances.
! L|ectr|ca| he|ds # paras|nc capac|tances
! Genera| equ|va|ent c|rcu|t: 6 capac|tors
! Common ground for pr|mary]secondary
# keducnon to 3 capac|tors
Pulse Transformer: Parasitic Capacitances Simplification I

arrangement. The structure of the winding and the core act like a
parallel plate capacitor with two different dielectrics the oil and
the coil former of the primary winding as shown in figure 9(b).
Assuming a linear voltage distribution again, the voltage
distribution, the distance and the permittivity are

1 , ,
, ,
, ,
( ) ( )
( )
Oil P Iso P
W
Iso Oil Iso P Oil P
eq
Iso Oil P Oil Iso P
x
V x V d x d d
h
d d
d d
! !
!
! !
= = +
+
=
+
(16)
and the energy could be calculated by

( )
, , 2
6 1 6
, ,
( )
1
6
Iso Oil Iso P Oil P W
R R
Iso Oil P Oil Iso P CP
d d h
W V l
d d d
! !
! !
+
=
+
. (17)

2.7 WINDING CAPACITANCE
So far, only the stored energy/capacitances between the
windings or between one winding and the core/tank have been
considered. But also between the singe turns of one winding
electric energy is stored. This energy could be calculated by
approaches presented in [5-7].
Due to fact that the windings are usually implemented with
only one / two layers and the turn to turn voltage is relatively
small as well as the distance between the single turns is relatively
large due to the insulation this part of the stored energy usually
could be neglected.
3 EQUIVALENT CIRCUIT OF A PULSE
TRANSFORMER
In the last preceding section the energies stored in the different
regions of the pulse transformer/tank setup have been calculated.
In the next step the parameters of the equivalent circuit of this
setup are calculated. This is performed by comparing the energy
stored in the equivalent circuit, which is a function of the
independent voltages V
1
-V
3
, with the calculated stored energy,
which is also a function of V
1
-V
3
(V
4
=V
2
+V
3
-V
1
). For determining
the energy stored in the equivalent circuit, first an appropriate
equivalent circuit must be chosen.
As could be shown the electrostatic behavior of an arbitrary
transformer could be modeled by a three input multipole (primary
and secondary voltage and the voltage between the windings) [3].
In the linear working area and as long as propagation times can be
ignored, the electrostatic energy / behavior of this multipole could
be modeled by six independent capacitors as shown in figure 10.
The energy stored in the equivalent circuit is given by

( )
( ) ( )
2
2 2 2
1 1 2 2 3 3 4 2 3 1
Eq
2 2
5 2 3 6 1 3
1
2
CV C V CV C V V V
W
C V V C V V
! "
+ + + + #
$ %
=
$ %
+ + + #
& '
(18)
what results from
2
1 2
C
CV . In the same manner the calculated
energy stored in the different regions of the setup in figure 2
could be written

( )
1 2 3 4 5 6
1 2 3
2
( , , ),
Cal R R R R R R
W W W W W W W
f V V V
= + + + + +
=
(19)
where V
4
has been replaced by V
4
= V
2
+V
3
-V
1
and the factor 2
results from the fact that the energies have been calculated for
each leg separately.
Since both energies must be equal W
Eq
=W
Cal
the equations of
the capacitors can be derived by setting the coefficients of the
variables/voltage terms V
1
, V
2
, V
3
, V
1
V
2
, V
1
V
3
and V
2
V
3
equal.
This results in six independent equations which can be solved for
the capacitances C
1
-C
6
.

In contrast to the results published in [3] the capacitors C
1
/C
2
,
C
3
/C
4
and C
5
/C
6
are not interdependent for the non parallel-plate
winding since the windings are not arranged in parallel and
therefore the winding construction is not symmetric with respect
to the low and the high side.
With the described model the transfer behavior of the pulse
transformer and therewith the influence on the transferred pulse
shape could be calculated and/or simulated for arbitrary
connections. Moreover, with the equations relating the geometry
of the transformer directly with the capacitances of the equivalent
model the construction of the transformer could be optimized for
the required transfer behavior. There, the load and the source
impedance must be connected to the presented equivalent circuit
in order to predict the overall transfer behavior [1].
3.1 SIMPLIFIED CIRCUIT WITH NEW EQUATIONS
In many pulse power applications the pulse transformer is not
used for galvanic isolation and the low side of the primary as well
as the low side of the secondary winding are grounded, i.e. V
3
= 0
in figure 10. In this case capacitor C
3
is replaced by a short circuit
and C
1
/C
6
as well as C
2
/C
5
are in parallel. Moreover, the voltages
across all capacitors could be derived from the primary and/or
secondary voltage by using the turns ratio N. With the voltages
known the energy which is stored in the capacitors could be
calculated as a function of the secondary (or primary) voltage.

2 2
2 2 1 6 4 2 5
2 2
( 1) ( )
2 2
d
C C C N C C N C
W V V
+ + ! + +
= = (20)
Furthermore, the equivalent circuit could be simplified to the
d
h
E-field
x
core
p
r
i
m
a
r
y
s
e
c
o
n
d
a
r
y
V
1
V
2
w
2
V
3
V
3
+
d
0
V
4
V(x)
a)

d
h
E-field
x
0V
core
p
r
i
m
a
r
y
V
1
w
d
d
Oil
iso
CP
b)

Figure 9. (a) Variables / simplified run of electric flux lines for region R
5
.
(b) Definition of variables for region R
6.

A
B
C
D
C
1
C
2
C
3
C
4
C
6
C
5
M
V
1
V
2
V
3

Figure 10. General equivalent circuit of pulse transformer.
Pulse Transformer: Parasitic Capacitances Simplification II
! L|ectr|ca| he|ds # paras|nc capac|tances
! Genera| equ|va|ent c|rcu|t: 6 capac|tors
! Common ground for pr|mary]secondary
# keducnon to 3 capac|tors
! Ca|cu|anng energy equ|va|ent capac|tor Q output
+ (Neg|ecnng resonance !
!
](
J
)
# S|mp|e !
!
](
5
c|rcu|t
# (
5
" (
F
+ (
J
+ (
K
(|arge C)




Pulse Transformer: Overshoot / Rise Time
S|mp|e equ|va|ent c|rcu|t
Cvershoot on the r|s|ng edge
Ver|hcanon by measurement
Des|gn cond|nons
! =
1
2R
Load
L
!
C
d
T
r
= 2! T
10%!90%
L
"
C
d
Capacitance Calculation with Mirror Charges
! Geometry |nterpreted as mu|n-conductor system
! M|rror charges for
- Core w|ndow
- Core |eg ] tank wa||
! Iast ca|cu|anon > 100x faster than ILM
W|thout m|rror charges
!"#$%&'()"&$'* +,-$./-0 1232&%$2(&. !2$*%4
!
= p
-1
m' " c m'
C'
]
= -c
] C'

= c
]
N
]=1
p
]
=
1
2c
0
c

ln(J
]
)
without miiioi chaiges:
! #$%&$'() *+'$(,($'$- ./ &01'*2%+-02'%( /)/'$&
! 3*((%( 24.(5$/ 6%( 5(%0+-$- /0(6.2$/
! 7./' 2.1201.'*%+ '*&$
Core window Area between core and tank wall
Cooling
pipes
.
.
.
.
.
.
Cons|der|ng se|f |nductance
Mutua| |nductance
Inductance Calculation with Mirror Line Currents
! Geometry |nterpreted as mu|n-conductor system (||ne current)
! Current m|rror method for magnenc surface
! M|rror|ng:
- Core w|ndow # box m|rror|ng
- Cuts|de core # wa|| m|rror|ng
! Iast ca|cu|anon > S00x faster than ILM
!"#$%&'()"&$'* +,-$./-0 1()"&$2(&. !2$*%3
! !"#$"%&' ()%"&*&"%"+ ,- $./%(0#)+.0%#& -'-%"$
! 1.&&")% $(&&#& $"%2#+ 3#& $,4)"%(0 -.&3,0"
! 1#&" 5()+#56 7#8 $(&&#5()4
! 9.%-(+" 0#&"6 5,// $(&&#5()4
! :,-% ($*/"$")%,%(#)
;
I'

=

0
2
ln(
1
r'

)
r'

<&- c
-

4
I'
]
=

0
2
ln4
1
d
i]
)
1#)-(+"&,%(#) #3 -"/3 ()+.0%,)0"
=.%.,/ ()+.0%,)0"
!"#$%&'()"&$'* +,-$./-0 1()"&$2(&. !2$*%3
! !"#$"%&' ()%"&*&"%"+ ,- $./%(0#)+.0%#& -'-%"$
! 1.&&")% $(&&#& $"%2#+ 3#& $,4)"%(0 -.&3,0"
! 1#&" 5()+#56 7#8 $(&&#5()4
! 9.%-(+" 0#&"6 5,// $(&&#5()4
! :,-% ($*/"$")%,%(#)
;
I'

=

0
2
ln(
1
r'

)
r'

<&- c
-

4
I'
]
=

0
2
ln4
1
d
i]
)
1#)-(+"&,%(#) #3 -"/3 ()+.0%,)0"
=.%.,/ ()+.0%,)0"
Wa|| M|rror|ng
8ox M|rror|ng
! Ana|ync equanons for transformer opnm|sanon
! V|sua||sanon too| (no too|box requ|red)
! u|se shape pred|cnon w|th non-||near CDL
! Good match|ng w|th ILM & measurement
Transformer Parasitics Modelling
I = k ! V
1.5
w|th I = erveance

0 2
.
10
4
4
.
10
4
6
.
10
4
8
.
10
4
1
.
10
5
1.2
.
10
5
1.4
.
10
5
0
20
40
60
80
100
100
0
I
k
V
k
( )
I
r
V
r
( )
150000 0 V
k
V
r
,
Pulse Transformer: Damping due to Klystron Load
! k|ystron-Mode|:
Chm|c Load
k|ystron Load
Capacitance: Stored Energy between Windings and Tank
Capacitance: Influence of Cooling Pipes
! Coo||ng p|pes c|ose to w|nd|ng # Capac|tance %
ara||e| W|nd|ng
Non-ara||e| W|nd|ng
Io|| W|nd|ng
Sma||est LC-roduct
Pulse Transformer: Winding Arrangement
1190mm
525mm
Pulse Transformer: Final Design
! Core mater|a|:
- 260SSA1
! r|mary w|nd|ngs:
- 3 kV |nput vo|tage
- Copper fo||, 5 = 1mm
! Secondary w|nd|ngs:
- 370 kV output vo|tage
- 21 1urns # 17.6 kV per turn
- kound conductor, 5 = 3mm

Short Pulse Solid State Power Modulator
Premagnetisation
! 8|po|ar ux sw|ng

# Core area ] 2
# keducnon of LC-product
# Lower turn |ength
! Add|nona| components requ|red
! Lnergy recovery poss|b|e (acnve c|rcu|t)

Premagnetisation Basic Concepts
A
Core
=
V
Sec
N
Sec
!B
T
P

Pulse flux
Reset flux
I
reset
I
pulse
P
u
l
s
e
g
e
n
e
r
a
t
i
o
n
L
o
a
d
DC reset
circuit
U
pulse
U
reset
! 3
rd
w|nd|ng on core
! DC choke + vo|tage source
# Current source for b|as current
! Add|nona| copper |osses
DC Premagnetisation
! 3
rd
w|nd|ng on core
! DC choke + vo|tage source
# Current source for b|as current
! Add|nona| copper |osses
DC Premagnetisation
! Lnergy recovery poss|b|e (magnenzanon !)
! u|se-by-pu|se premagnensanon
- Low vo|tage MCSIL1s]D|odes
- Choke for current source behav|our
- Low vo|tage source
- Neganve output vo|tage
dur|ng premagnensanon
Improved DC Premagnetisation
! Lnergy recovery poss|b|e (magnenzanon !)
! u|se-by-pu|se premagnensanon
- Low vo|tage MCSIL1s]D|odes
- Choke for current source behav|our
- Low vo|tage source
- Neganve output vo|tage
dur|ng premagnensanon
Improved DC Premagnetisation
Active Premagnetisation
! No premagnensanon-choke requ|red
! Lnergy recovery poss|b|e (v|a <
B
)
! u|se-by-pu|se premagnensanon
! Neganve ;
L6&
dur|ng premagnensanon
! Se|f regu|anng (no supp|y requ|red)
Active Premagnetisation
! No premagnensanon-choke requ|red
! Lnergy recovery poss|b|e (v|a <
B
)
! u|se-by-pu|se premagnensanon
! Neganve ;
L6&
dur|ng premagnensanon
! Se|f regu|anng (no supp|y requ|red)
Active Premagnetisation
! No premagnensanon-choke requ|red
! Lnergy recovery poss|b|e (v|a <
B
)
! u|se-by-pu|se premagnensanon
! Neganve ;
L6&
dur|ng premagnensanon
! Se|f regu|anng (no supp|y requ|red)
Premagnetisation - Comparison
Passive Advanced Active
Comp|ex|ty Slmple/8obusL hlgh medlum
Components
volLage Source
low I / low V
MCSlL1/ulode
hlgh I / low V
lC81
hlgh I / hlgh V
lnducLor
low I / hlgh V
ulode "
#$%&
hlgh I / hlgh V
CapaclLor
hlgh I / med. V
3
rd
W|nd|ng yes no no
Iorward ;
<B
hlgh (~ 10v) hlgh (~ 10v) low (2v)
Vo|ume hlgh hlgh medlum
Losses 7.23 ! 2.38 ! 0.83 !
numbers for 20MW modulaLor
1.43 kW 476.4 W 169.4 W
ass|ve Advanced Acnve
Short Pulse Solid State Power Modulator
Bouncer
! !(-osc|||anon: (
7
& !
7
- Inductor vo|tage |s added to pu|se
- Synchron|sanon: M|d of pu|se = /]4
! 1wo w|nd|ng |nductor
# Adapnon to sw|tch vo|tage
! Des|gn room |s constra|nt by
- Max. sw|tch current
- Max. sw|tch vo|tage
- !(-osc|||anon frequency
- A||owed droop
LC-Bouncer Principle of Operation
LC-Bouncer based on 2-Winding Inductor
! Capac|tor:
- Capac|tance 1.SI
- In|na| vo|tage 3kV
! Inductor:
- Inductance 3.3 n
- Inductor core AMCC-800A
- D|mens|ons 90x130x70 mm
- No of pr|mary turns 3
- No of secondary turns 6
- eak current 1.7kA
! I|uer of bouncer
# Ma[or |mpact
on repeatab|||ty
LC-Bouncer Design Results
Short Pulse Solid State Power Modulator
Switching Unit / Gate Drive
! Iast turn on of IG81
# Mu|n-stage turn on
! Iast turn o of IG81
# Mu|n-stage turn o
# Vo|tage c|amp|ng
! Iast over-current ] over-d%]d& detecnon
# kogowsk| co||
Gate Unit with improved Short Circuit Detection
and turn-off Capability for 4.5 kV Press-Pack
IGBTs operated at 4 kA Pulse Current
D. Gerber and J. Biela
Laboratory for High Power Electronic Systems
ETH Zurich, Physikstrasse 3, CH-8092 Zurich, Switzerland
Email: gerberdo@ethz.ch
A. Kopta and R. Leutwyler
ABB Switzerland Ltd
Fabrikstrasse 3, CH-5600 Lenzburg, Switzerland
Email: arnost.kopta@ch.abb.com
AbstractThis paper presents the results of short circuit tests
performed with a 4.5 kV press-pack IGBT designed for pulsed
applications and operated at a pulse current of 4 kA. At the
beginning, a short overview on the gate unit, the implemented
gate boosting as well as the two stage turn-off and active clamping
is given. An over-di/dt as well as an over-current detection using
a PCB Rogowski coil is applied in order to protect the IGBT
during operation. Afterwards, two types of short circuit tests
were performed. First, the over-di/dt detection was tested by
turn-on into a short circuit. The tests showed that the over-di/dt
detection reacts very fast. The IGBT was always able to turn-off
the short circuit current. The maximum short circuit current
was 4.4 kA. Second, additional tests by using an auxiliary switch
were made to investigate short circuit events during pulse top.
The IGBT was able to turn-off a maximum short circuit current
of 8.7 kA. The device was able to turn off safely in all cases.
I. INTRODUCTION
In many new solid state modulators, semiconductor switches
are used. The advantage of the semiconductor switches is their
turn-off capability. The disadvantages of these devices are the
lower blocking voltage and lower current rating compared with
other technologies. In order to overcome the latter limitation,
the switches have to be operated at the highest current as
possible. For this purpose a high gate-emitter voltage is
required to achieve a fast rise time and a high pulse current
per switch. This results in a possibly high maximum collector
current during short circuits. If the collector current exceeds
a certain limit, the device will be destroyed.
In order to operate such switches safely, a fast and reliable
short circuit detection is required in combination with a low
inductive setup to turn-off high short circuit currents. To react
on short circuit events as fast as possible, a di/dt detection
has to be used. In [1], such a detection using the parasitic
inductance of the Kelvin contacts of a bonded module has
been introduced.
The gate unit presented in this paper uses a PCB Rogowski
coil to detect short circuits. A Rogowski coil is capable of
measuring a high di/dt with short delay. It offers also a
galvanically isolated measurement of the pulsed current after
integrating the coil output voltage. The low prole allows a
simple integration of the coil in press-pack assemblies and low
THA
Integrator
!
coil
C
G
E
FPGA
Turn-oII stage
Turn-on stage Clamping
Status detection
Short circuit detection
17.5V 16V
S
1
S
2
S
3
S
4
S
5
D
1
D
2
v
ce, two stage
di/dt limit
over-current limit
Fig. 1. Structure of the gate unit.
inductive setups. The applied Rogowski coil is described and
analyzed in detail in [2].
This paper presents the results of short circuit tests per-
formed with a press-pack IGBT operated at 3 kV and 4 kA. In
the next section, the used gate unit including the operation
during short circuit turn-off is summarized. Then, a short
overview on the IGBT technology is introduced. Afterwards,
the measurements carried out are presented.
II. GATE UNIT
In the following, the gate unit is described. First, an
overview on the hardware is given. Afterwards, the normal
operation and the operation under short circuit conditions is
discussed.
The gate unit can be structured in the basic blocks as shown
in Fig. 1. An FPGA is used to control the different blocks and
provides status signals.
A. Normal Operation
The turn-on and turn-off stages as well as the status signals
are collector-emitter voltage (v
ce
) controlled. Their operation
depends on the applied v
ce
before the turn-on process starts.
Hence, a track and hold amplier (THA) is used in order to
store v
ce
before the switch is turned on.
Since a fast turn-on and turn-off is required, the gate unit
uses gate boosting and two stage turn-off including active
!
"#
t
17.5V
16V
S
2
, S
3
on S
5
on
!
$#%
'
$
t
!
$#
'
$
S
4
, S
5
on S
1
, S
2
on
Fig. 2. Gate-Emitter voltage, v
ce
and i
c
for one switching cycle during
normal operation with an RL-load.
clamping as proposed in [3] and [4]. The normal operation
of these stages will be described in the following.
After the track and hold amplier is in hold state, the turn-
on process starts. Switches S
1
and S
2
are closed and all other
switches are opened. When the gate-emitter voltage (v
ge
) is
higher than 16 V, diode D
1
is not conducting anymore. This
results in a higher turn-on resistance which provides additional
damping. As soon as v
ce
falls below a certain level or after a
xed time limit of 1 s is reached, switch S
1
opens and S
3
is
closed to pull v
ge
to 16 V.
After the switching signal goes low, the normal turn-off
procedure starts. Switches S
1
to S
3
are opened and S
4
as
well as S
5
are closed. When v
ge
reaches a xed voltage, S
4
is opened. Hence, the turn-off resistance becomes higher and
the di/dt during turn-off is reduced. This in turn reduces the
peak voltage of v
ce
. The track and hold amplier is set into
the track state after the switch turned off.
The waveform of v
ge
, v
ce
and i
c
for one switching cycle
during normal operation is shown in Fig. 2.
B. Short Circuit Turn-Off
As previously mentioned, a PCB Rogowski coil is used
to detect short circuits. To react as fast as possible on short
circuits during the turn-on process, a over-di/dt detection is
used. Since the Rogowski coil provides an output voltage
proportional to the di/dt, the coil signal can directly be used
for over-di/dt detection.
Since the over-di/dt detection is not sufcient to detect short
circuits, the coil voltage is integrated to measure the collector
current. As soon as the measured current exceeds a certain
limit, the gate unit detects the short circuit. The over-current
limit during the performed tests was set to a xed level.
!
"#
t
17.5V
16V
S
2
, S
3
on S
5
on
S
4
, S
5
on
!
$#%
'
$
t
!
$#
'
$
short circuit
S
1
, S
2
on
Fig. 3. v
ge
for one switching cycle during short circuit with an RL-load.
When the gate unit detects a short circuit, the switch
is turned off immediately. At the beginning, the turn-off
procedure is the same as during normal operation. Since v
ce
rises much faster than during normal turn-off, the propagation
delay of the normal two stage turn-off circuitry is too high.
Therefore, switches S
4
and S
5
would remain turned on during
the whole turn-off process. This would result in a high v
ce
.
Hence, switch S
4
is opened after a xed time limit (Fig. 3).
III. DEVICE TECHNOLOGY
Fig. 4 shows a cross-section of the used 4.5 kV IGBT chip.
The IGBT utilizes an enhanced planar IGBT cell on the emitter
side and an optimized buffer and anode design on the collector
side.
The enhanced planar cell ensures a combination of low
losses and controllable switching behavior. The low losses
are achieved by the N-enhancement layer, which minimizes
the drainage of holes into the p-base during conduction. In
this way the electron-hole plasma can be enhanced on the
emitter-side of the N-base, which ensures a combination of low
conduction and turn-off losses. The planar cell layout further
ensures a low gate-collector capacitance, which improves the
turn-on behavior of the chip. In this way, the IGBT can easily
be controlled by the gate-unit for a wide range of turn-on
transients.
The buffer and the anode of the IGBT have been carefully
optimized in order to achieve a high short-circuit ruggedness,
which is important in the investigated pulse power application.
During short-circuit, the IGBT has to support the applied DC-
link voltage and at the same time carry a large current. The
current is thereby transported by electrons injected by the
MOS-channel and holes injected by the IGBT anode. In [5] it
was shown that the main IGBT short-circuit failure mechanism
Gate Drive
! Short c|rcu|t |nductance: S0nn
Co||ector-Lm|uer Vo|tage Co||ector Current
Turn on with existing Short Circuit
Co||ector-Lm|uer Vo|tage Co||ector Current
! Short c|rcu|t Q S0nn ] 2kV ] S00ns...3s
Short Circuit during Pulse
Co||ector-Lm|uer Vo|tage Co||ector Current
! Short c|rcu|t Q S0nn ] 3kV ] 10s
Short Circuit during Pulse Long Pulse
Short Pulse Solid State Power Modulator
Ultra Precise Charging
! 1r|angu|ar current mode (1CM)
! 1wo |nter|eaved converters
! Input vo|tage ;
4C
= 1.3kV
! Cutput vo|tage ;
L6&
= 3kV 30mV
! Cutput power =
L6&
= 2 x 40kW
! Sw|tch|ng freq. 2
"
= 70 - 2S0kn2
! kepeatab|||ty 10ppm

Ultra-Precise Charging Converter
L
1
+
-
J
in C
in
C
out
v
out
D
1a
S
1n
C
Sn,S1n
R
Sn,S1n
S
1a
C
Sn,S1a
R
Sn,S1a
C
Sn,D1a
R
Sn,D1a
D
1n
C
Sn,D1n
R
Sn,D1n
S
1
D
1
Operating Principle Charging of Inductor
! Interva| /
G
- Inductor current |ncreases
! Interva| /
F
- 2VS turn o of "
G
- kesonant trans|non
M (
"G
|s charged to 9
)6&
- (
<G
|s d|scharged to 0
Operating Principle Resonant Transition
! Interva| /
N
- Inductor current decreases
- (
)6&
|s charged through <
G
Operating Principle Charging of Output Capacitor
! Interva| /
J
- kesonant trans|non
M (
<G
|s charged to 9
)6&
- (
"G
|s d|scharged to 0
- (
"
= (
<G
+ (
"G
# Neganve %
!
! kange of 2VS operanon |s ||m|ted


Operating Principle Resonant Transition II # ZVS Turn on off S
1
Control Ultra precise charging
! Switching cycles are independent
! Cycle-to-cycle feedback control
! Required peak current / on-time is calculated for the next cycle
! i
Lp
=0..80A # !v
out
=0..80mV
Control Hardware Factors influencing Repeatability
! Input vo|tage measurement SNk
! Cutput vo|tage measurement SNk
! Sw|tch current measurement SNk
! ADC reso|unon
! uannzanon re|ated errors
! DAC reso|unon
! Converter ||m|tanons
! I|n|te reso|unon |n d|g|ta| doma|n
! Sw|tch|ng s|gna| [|uer
Precision Analysis: Algorithm
Charging Precision Analysis Aim: 0.03V
! ADC 188|t
! DAC 128|t
! I|uer Sns
! SNk
Vmeas
92.Sd8
! SNk
Vmeas
60d8
! S|gna| De|ay 260ns
Short Pulse Solid State Power Modulator
IC ] Charg|ng Un|t u|se Generator u|se 1ransformer
Solid-State Modulator with Pulse Transformer & PFC Supply
! 12 Sub-un|ts
! 24 ress-pack IG81s
12 Ma|n sw|tches
12 re-magnensanon sw|tches
( 1 bouncer sw|tch )
! 6 1ransformer cores
# I|na| tesnng m|d 2014
System Setup 127MW / 370kV / 3s
Ultra High Precision Klystron Modulators
for
Compact Linear Colliders (CLIC)
Medium Long Pulse Modulator
(~ 100!s)
! u|se vo|tage 180kV
! u|se power 3SMW
! u|se duranon 140s
! kepennon rate S0nz
! k|se]fa|| nme 3s + Ss seu||ng
! Max. pu|se droop 0.8S
! keproduc|b|||ty 10ppm
! System emc|ency > 90
CLIC System Specifications
Modulator System - Overview
! Inter|eaved buck-boost converter w|th short c|rcu|t sw|tch
! Vo|tage |eve|s:
- ;
3-%0
= 3kV
- ;
OE40
= 4S0V
- ;
OEL6&
= 0 - 300V
# 10 drop |n ma|n capac|tor
! A|m: 10ppm repeatab|||ty
# < S ppm r|pp|e |nduced by bouncer
# 24-fo|d |nter|eav|ng ( 4 x 6 )
# Lecnve r|pp|e frequency up to 2.4 Mnz
# ara||e| redundancy
Active Bouncer Topology
Operation Principle Before Main Pulse
! kamp up before ma|n sw|tch |s c|osed:
- (
PE)6&
|s shortened
- Current |n !
P
|ncreases

Operation Principle Output Pulse
! Inter|eaved buck operanon dur|ng pu|se:
- 2
1Q%&7R
= 100knz
- %
3
= %
P
+ %
3

Operation Principle After Main Pulse
! kesonant trans|non (
PE)6&
& !
P


Operation Principle After Main Pulse
! Inter|eaved boost operanon:
- 2
1Q%&7R
= 20knz
! I|na| d|scharge of (
PE)6&
! u|se pause
! Stored energy |n |nductances |s kept constant
# !
+S6-$
= const.
# !
=R
& w|th # of |nter|eaved stages C
! er phase equa| ! va|ues

! Current r|pp|e:
! k|pp|e frequency:
# Cutput vo|tage r|pp|e:
Ideal Interleaving
I
Rip
~
1
N
2
V
Rip
~
1
N
3
f
Rip
~ N
L
Ph1
= L
Ph2
L
Ph
~ NL
s
! Ana|ys|s |n nme-doma|n for each sw|tch|ng per|od
! Component to|erances are cons|dered
! I|uer of sw|tches are cons|dered
! Assumpnon: Inductance va|ues measured at start-up
! Worst case:
! A|| others:
Interleaving with Tolerances
L
1
= 1+ x%
( )
L
L
1
= 1! x%
( )
L
Current r|pp|e to output vo|tage
Interleaving with Tolerances System Transfer Function
! Idennhcanon of system transfer funcnon
- Inc|. freq. dependency of R
winding

- Inc|. to|erances |n paras|ncs
! 1o|erance: worst case
! Sw|tch|ng [|uer: Sns
! Most unfavourabe| conhguranon chosen
! Component to|erances of 1S
# 6 |nter|eaved modu|es
Gate supp||es
Contro| board
Vo|tage measurements
Short
c|rcu|t
sw|tch
Current measurement
n|gh s|de
sw|tch
Low s|de
sw|tch
! Sw|tch|ng frequency 100knz
! u|se current per modu|e 700A
! 8ouncer emc|ency 91
# System emc|ency $ -0.4S
! 8ouncer vo|ume 10.4 dm
3
! 1ota| |osses 2307W
Active Bouncer Prototype
Modulator System - Efficiency
! Lnergy |n k|ystron |n case of arc
< 10I (w|thout cab|e)
! Lmc|ency " 91
! I|na| tesnng: 201S]2016
Resonant DC-DC Converters
for
Long Pulse Klystron Modulators
Long Pulse Modulator
(> 1ms)
European Spallation Source (ESS)
(Lund)
Solid State Long Pulse Modulator
! u|se power 2.88MW
! Average power 133kW
! Lmc|ency T z 90
! u|se w|dth /
=U
= 3.Sms
! u|se vo|tage ;
)6&
= 11SkV
! u|se repennon rate =
VV
W 14nz

! k|se]fa|| nme /
V
] /
B
s 1S0s
! Short c|rcu|t energy >
:*7
s 10I
Solid State Long Pulse Modulator Resonant Converter
! Sw|tch|ng frequency > resonance frequency
# Soh sw|tch|ng for a|| MCSIL1s (2VS)
# n|gh emc|ency
! Inherent ||m|tanon of short c|rcu|t current
! Sw|tch|ng frequency ~100knz
! Modu|e |nput vo|tage 400V
! Modu|e output vo|tage 14.4kV
! Modu|e pu|se power 180kW
Global Optimisation
! u|se power 2.88MW
! Average power 133kW
! Lmc|ency T z 90
! u|se w|dth /
=U
= 3.Sms
! u|se vo|tage ;
)6&
= 11SkV
! u|se repennon rate =
VV
W 14nz

! k|se]fa|| nme /
V
] /
B
s 1S0s
! Short c|rcu|t energy >
:*7
s 10I
Thermal Transformer Model
V
&R
between 1urns
! 1herma| equ|va|ent network
! Core]w|nd|ng: neat conducnon
! Nove| mode|s for so||d & ||tz w|re
Insulation Design Procedure
! L-he|d # Charge s|mu|anon method
! 1urns # L|ne charge
! Mode||ng of arb|trary conhguranons
! Max|mum L-he|d esnmanon
Transformer/Inductor Design Tool (E-/H-Field)
Simulation Results: Single Module
kesonant c|rcu|t parameters
;
)6&
= 14.4kV !
1
= S.1n
4
)6&
= 12.SA (
1
= 0.837I
=
)6&
= 180W (
#
= 2.S8nI
2 = 100knz 0 = 18
kesonant c|rcu|t parameters
;
)6&
= 11SkV =
)6&
= 2.88MW
4
)6&
= 2SA 2 = 100knz
Simulation Results: Complete System
Prototype System
! Spec|hcanons
! ;
L6&
= 14.4 kV
! 4
L6&
= 12.SA
! =
L6&
= 180kW
! Constra|nts
! I|ux dens|ty % 1S0m1
! Core]Wdg. temperature < 120C
! Max. e|ectr|ca| he|d < 1SkV]mm
! Leakage |nductance = S.1n
Measurement kesu|ts
Series Resonant Inductor
1oro|da| A|r Inductor
! W|nd|ng C = 12
! L|tz w|re 8 x 2000 x 0.0S
! Losses S4.06 W
! D|mens|ons 5
-
= 1S2 mm
R = 180 mm
! Vo|ume 3.3 ||ter

Results: Rectifier and Parallel Capacitor
! # of d|odes 1S6
! D|ode type A140D120SG (D3Ak)
! # of capac|tors 624
! Capac|tor type 100nI NC SMD 2220
! 1ota| |osses 123 W
! D|mens|ons $ = 37S mm
& = 100 mm
R = 23S mm
! Vo|ume 8.8 ||ter
! C8 test 20kV
DC

Performance DC-DC Converter
Solid State
Bipolar Pulsed Voltage Source
for
Kicker Magnets
Specifications
Max. CurrenL 3600 A
lnducLance 38 P
ulse uurauon 600 s
8lse / lall 1lme 100 s
Charge uurauon 100 ms
Max. CurrenL CradlenL 36 A / s
Mln. volLage &
%
2128 v
lnducLor ulse Lnergy '
%
393 !
8eslsLor ulse Losses '
(
13.3 !
Low r|pp|e
n|gh reproduc|b|||ty
Bipolar Pulsed Voltage Source (BiPuVoSo)
2 |eve| |nverter system
# I|ne current ad[ustment
# Loss compensanon

Modu|ar marx-type mu|n-|eve| system
# Coarse current ad[ustment
A BiPuVoSo Module in Detail
2 |eve| |nverter system
# Inter|eav|ng: k|pp|e current reducnon

Modu|ar marx-type mu|n-|eve| system
# n-8r|dge: 8|po|ar output vo|tage
Principle of Operation
- 2 |eve| |nverter system
- Sma|| output current r|pp|e
- k|pp|e reduced by
- Inter|eav|ng of 6 |nverters
- Cutput capac|tor (
)6&

- Adapnve pre-contro| for ;
!)11

- Modu|ar marx-type mu|n-|eve| system
- Generates h|gh |nductor vo|tages
- Lnab|es fast current trans|ents
Simulation Results
- S|mu|anon of current pu|se
- I|at top current dev|anon of 2.7A (0.1S)
- kepennon accuracy of 0.19 A (1.02S 10
-4
)
Cnly conLroller devlauons
no [luer eecLs respecLed
no measuremenL errors consldered

- Inter|eaved buck converter
# 8a|anced currents

Charging Converter
- Nove|| converter concept
- Ga|van|c |so|anon
- AC |nput
- Mu|n DC output
- 8enehts
- Compact
- n|gh emc|ency
Charging Converter
- Nove|| converter concept
- Ga|van|c |so|anon
- AC |nput
- Mu|n DC output
- 8enehts
- Compact
- n|gh emc|ency
Capacitor "
#
Bipolar Modular Multi-Level
Marx-Type Converter
Buck Converter System
$%& ''
((& ''
%%&) ''
Buck Converter Module
88.9 89 89.1 89.2 89.3 89.4 89.5 89.6 89.7 89.8
0
500
1000
1500
2000
C
u
r
r
e
n
t

|
A
|
89.9
89.9

0
2000
4000
V
o
l
t
a
g
e

|
V
|
88.9 89 89.1 89.2 89.3 89.4 89.5 89.6 89.7 89.8
1850
1851
1852
1853
1854
1855
1856
1857
1858
C
u
r
r
e
n
t

|
A
|
Time ! |ms|
#
$%!
#
&'(
#
$%!

$%!
) *+, -
.
$%!
Current Source for Kicker Magnet
- 3.8kA pu|se current
- 400s pu|se
- 38n |nductance

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