R07DS0463EJ 0200 Rev.2.

00 Page 1 of 6
J un 15, 2011
Preliminary Datasheet
RJH30H1DPP-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr =80 ns typ., tf =150 ns typ.
Low collector to emitter saturation voltage: V
CE(sat)
=1.5 V typ.
Low leak current: I
CES
=1 A max.
Built-in Fast Recovery Diode: V
F
=1.4 V typ., t
rr
=23 ns typ.
Isolated package: TO-220FL

Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
2
3
1. Gate
2. Collector
3. Emitter
C
G
E


Absolute Maximum Ratings
(Tc =25C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
360 V
Gate to emitter voltage V
GES
30 V
Collector current I
C
30 A
Collector peak current ic(peak)
Note1
200 A
Collector to emitter diode Forward peak current i
DF
(peak)
Note1
100 A
Collector dissipation P
C
Note2
20 W
J unction to case thermal impedance j-c 6.25 C/W
J unction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Tc =25C

R07DS0463EJ 0200
Rev.2.00
J un 15, 2011
RJH30H1DPP-M0 Preliminary
R07DS0463EJ 0200 Rev.2.00 Page 2 of 6
J un 15, 2011
Electrical Characteristics
(Tj =25C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
1 A V
CE
=360 V, V
GE
=0
Gate to emitter leak current I
GES
100 nA V
GE
=30 V, V
CE
=0
Gate to emitter cutoff voltage V
GE(off)
2.5 5 V V
CE
=10 V, I
C
=1 mA
Collector to emitter saturation
voltage
V
CE(sat)
1.5 2 V I
C
=30A, V
GE
=15 V
Note3

Input capacitance Cies 740 pF
Output capacitance Coes 60 pF
Reveres transfer capacitance Cres 17 pF
V
CE
=25 V
V
GE
=0
f =1 MHz
Total gate charge Qg 23 nC
Gate to emitter charge Qge 4 nC
Gate to collector charge Qgc 8 nC
V
GE
=15 V
V
CE
=150 V
I
C
=30 A
t
d(on)
0.02 s
t
r
0.08 s
t
d(off)
0.04 s
Switching time
t
f
0.15 s
I
C
=30 A
R
L
=5
V
GE
=15 V
R
G
=5

FRD Forward voltage V
F
1.4 1.7 V I
F
=20 A
Note3

FRD Reverse recovery time t
rr
23 ns I
F
=20 A
di
F
/dt =100 A/s
Notes: 3. Pulse test

RJH30H1DPP-M0 Preliminary
R07DS0463EJ 0200 Rev.2.00 Page 3 of 6
J un 15, 2011
Main Characteristics
Typical Output Characteristics (2) Typical Transfer Characteristics
200
160
120
80
40
2 4 6 8 10
Typical Output Characteristics (1)
100
80
60
40
20
1 2 3 4 5
Ta =25C
Pulse Test
Ta =25C
Pulse Test
5.5 V
6.5 V
7.5 V
7 V
6 V
6 V
7 V
8 V
9 V
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t



I
C


(
A
)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t



I
C


(
A
)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t



I
C


(
A
)
Collector Current I
C
(A)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t



I
C


(
A
)
Maximum Safe Operation Area
0
0
50
40
30
20
10
0
0
0
0
2 4 6 8 10

Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
C
o
l
l
e
c
t
o
r

t
o

E
m
i
t
t
e
r

S
a
t
u
r
a
t
i
o
n

V
o
l
t
a
g
e











































V
C
E
(
s
a
t
)


(
V
)
C
o
l
l
e
c
t
o
r

t
o

E
m
i
t
t
e
r

S
a
t
u
r
a
t
i
o
n

V
o
l
t
a
g
e











































V
C
E
(
s
a
t
)


(
V
)
0.1
1
10
1 10 100
V
GE
= 5 V
V
GE
= 5 V
V
CE
=10 V
Pulse Test
Collector to Emitter Voltage V
CE
(V) Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Tc =75C
25C
25C
10 V
8 V
9 V
12 V
10 V
11 V
15 V
15 V
0
0 4 8 12 20 16
I
C
=30 A
60 A
90 A
Pulse Test
Ta =25C
1
2
4
3
5
V
GE
=15 V
Pulse Test
25C 75C
Tc =25C
1000
100
10
0.1 1 10 100
1
0.01
0.1
1000
1
0

s
Ta =25C
1 shot pulse
14 V
P
W

=

1
0
0

s


RJH30H1DPP-M0 Preliminary
R07DS0463EJ 0200 Rev.2.00 Page 4 of 6
J un 15, 2011
Gate Resistance Rg ()
t
f
t
d(off)
t
r
t
d(on)
10
100
1000
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
S
w
i
t
c
h
i
n
g

T
i
m
e



t


(
n
s
)
S
w
i
t
c
h
i
n
g

T
i
m
e



t


(
n
s
)
Colloctor Current I
C
(A)
1 10 100 1 10 100
t
r
10
100
1000
I
C
=30 A, V
GE
=15 V
R
L
=5 , Ta =25C
t
d(off)
t
f
t
d(on)
V
CC
=150 V, V
GE
=15 V
Rg =5 , Ta =25C
Switching Characteristics (Typical) (3)
S
w
i
t
c
h
i
n
g

T
i
m
e



t


(
n
s
)
Case Temperature Tc (C)
10
100
1000
0 50 25 100 75 125 150
I
C
=30 A, V
GE
=15 V
R
L
=5 , Rg =5
t
f
t
d(off)
t
d(on)
t
r
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
C
o
l
l
o
c
t
o
r

t
o

E
m
i
t
t
e
r

V
o
l
t
a
g
e



V
C
E


(
V
)
G
a
t
e

t
o

E
m
i
t
t
e
r

V
o
l
t
a
g
e



V
G
E


(
V
)
800
600
400
200
0
0
16
12
8
4
0
8 16 24 32 40
V
GE
V
CC
=150 V
I
C
=30 A
Ta =25C
V
CE
C
a
p
a
c
i
t
a
n
c
e



C


(
p
F
)
0 20 40 60 80 100
Typical Capacitance vs.
Colloctor to Emitter Voltage
Colloctor to Emitter Voltage V
CE
(V)
Cies
Coes
Cres
V
GE
=0 V, f =1 MHz
Ta =25C
1
100
1000
10000
10


RJH30H1DPP-M0 Preliminary
R07DS0463EJ 0200 Rev.2.00 Page 5 of 6
J un 15, 2011
Waveform
Ic Monitor
Vin Monitor
D.U.T..
Rg
Vin =15 V
V
CC
10%
t
r
Ic
Vin
90%
90%
90%
10%
10%
R
L
SwitchingTime Test Circuit
t
d(on)
t
d(off) t
f
t
on
t
off
Collector to Emitter Diode
Forward Voltage V
ECF
(V)
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current
D
i
o
d
e

F
o
r
w
a
r
d

C
u
r
r
e
n
t



I
F


(
A
)
100
80
60
40
20
0
0 1 2 3 4 5
Pulse Test
Ta =25C
1 m 10 m 100 m 1 10
Pulse Width PW (s)
1
0.3
3
0.1
0.03
0.01
10
NormalizedTransient Thermal Impedance vs. Pulse Width
P
DM
PW
T
D =
PW
T
D =1
0.5
1
s
h
o
t

p
u
l
s
e
0.2
0.1
0
.0
5
0
.0
2
0
.
0
1
Tc =25C


RJH30H1DPP-M0 Preliminary
R07DS0463EJ 0200 Rev.2.00 Page 6 of 6
J un 15, 2011
Package Dimensions
Unit: mm
Previous Code
PRSS0003AF-A TO-220FL
MASS[Typ.]
1.5g
RENESAS Code J EITA Package Code Package Name
TO-220FL
3
.
6

0
.
3
1
5
.
0

0
.
3
1
2
.
5

0
.
5
10.0 0.3
6
.
5

0
.
3

3.2 0.2
0.75 0.15
1.15 0.2
2.54 0.25 2.54 0.25
2
.
6

0
.
2
4
.
5

0
.
2
0.40 0.15
2.8 0.2
1.15 0.2
3
.
0

0
.
3


Ordering Information
Orderable Part Number Quantity Shipping Container
RJ H30H1DPP-M0-T2 600 pcs Box (Tube)


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