2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.

com
FJ P13009 Rev. B
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March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings* T
C
=25C unless otherwise noted (notes_1)
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.


Package Marking and Ordering Information
Notes_2 :
1) The Affix -H2 means the hFE classification.
2) The Suffix -TU means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.

Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 700 V
V
CEO
Collector-Emitter Voltage 400 V
V
EBO
Emitter-Base Voltage 9 V
I
C
Collector Current (DC) 12 A
I
CP
Collector Current (Pulse) 24 A
I
B
Base Current 6 A
P
C
Collector Dissipation (T
C
=25C) 100 W
T
J
J unction Temperature 150 C
T
STG
Storage Temperature Range -65 ~150 C
Device Item (notes_2) Device Marking Package Packing Method Qty(pcs)
FJ P13009 J 13009 TO-220 Bulk 1,200
FJ P13009H2TU J 130092 TO-220 TUBE 1,000
FJ P13009TU J 13009 TO-220 TUBE 1,000
1.Base 2.Collector 3.Emitter
1
TO-220
2 www.fairchildsemi.com
FJ P13009 Rev. B
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Electrical Characteristics T
C
=25C unless otherwise noted
* Pulse Test: PW 300s, Duty Cycle 2%
h
FE
Classification
Symbol Parameter Conditions Min. Typ. Max Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage I
C
=10mA, I
B
=0 400 V
I
EBO
Emitter Cut-off Current V
EB
=9V, I
C
=0 1 mA
h
FE
* DC Current Gain

V
CE
=5V, I
C
=5A (h
FE1
)
V
CE
=5V, I
C
=8A
8
6
40
30
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
I
C
=12A, I
B
=3A
1
1.5
3
V
V
V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
1.2
1.6
V
V
C
ob
Output Capacitance V
CB
=10V, f =0.1MHz 180 pF
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=0.5A 4 MHz
t
ON
Turn On Time V
CC
=125V, I
C
=8A
I
B1
=- I
B2
=1.6A, R
L
=15,6
1.1 s
t
STG
Storage Time 3 s
t
F
Fall Time 0.7 s
Classification H1 H2
h
FE1
8 ~17 15 ~28
3 www.fairchildsemi.com
FJ P13009 Rev. B
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Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area
0.1 1 10 100
1
10
100
V
CE
=5V


h
F
E
,

D
C

C
U
R
R
E
N
T

G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
I
C
=3 I
B
V
CE
(sat)
V
BE
(sat)


V
B
E
(
s
a
t
)
,

V
C
E
(
s
a
t
)
[
V
]
,

S
A
T
U
R
A
T
I
O
N

V
O
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000


C
o
b
[
p
F
]
,

C
A
P
A
C
I
T
A
N
C
E
V
CB
[V], COLLECTOR BASE VOLTAGE
0.1 1 10 100
10
100
1000
10000
V
CC
=125V
I
C
=5I
B
t
D
, V
BE
(off)=5V
t
R


t
R
,

t
D

[
n
s
]
,

T
U
R
N

O
N

T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
100
1000
10000
V
CC
=125V
I
C
=5I
B
t
F
t
STG


t
S
T
G
,

t
F

[
n
s
]
,

T
U
R
N

O
F
F

T
I
M
E
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
1
0

s
1
0
0

s
1
m
s
D
C


I
C
[
A
]
,

C
O
L
L
E
C
T
O
R

C
U
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R
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
4 www.fairchildsemi.com
FJ P13009 Rev. B
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Typical Performance Characteristics (Continued)
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
10 100 1000 10000
0.01
0.1
1
10
100
Vcc=50V,
I
B1
=1A, I
B2
= -1A
L = 1mH


I
C
[
A
]
,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120


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T
C
[
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C], CASE TEMPERATURE
5 www.fairchildsemi.com
FJ P13009 Rev. B
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Mechanical Dimensions
4.50 0.20 9.90 0.20
1.52 0.10
0.80 0.10
2.40 0.20
10.00 0.20
1.27 0.10
3.60 0.10
(8.70)
2
.
8
0

0
.
1
0
1
5
.
9
0

0
.
2
0
1
0
.
0
8

0
.
3
0
1
8
.
9
5
M
A
X
.
(
1
.
7
0
)
(
3
.
7
0
)
(
3
.
0
0
)
(
1
.
4
6
)
(
1
.
0
0
)
(
4
5

)
9
.
2
0

0
.
2
0
1
3
.
0
8

0
.
2
0
1
.
3
0

0
.
1
0
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54 0.20]
2.54TYP
[2.54 0.20]
TO-220
Dimensions in Millimeters

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

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Rev. I24