UNISONIC TECHNOLOGIES CO.

, LTD
7N60 Power MOSFET
www.unisonic.com.tw 1 of 9
Copyright 2014 Unisonic Technologies Co., Ltd QW-R502-076.P
7.4A, 600V N-CHANNEL
POWER MOSFET
DESCRI PTI ON
The UTC 7N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* R
DS(ON)
< 1.0 @ V
GS
= 10V
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL

ORDERI NG I NFORMATI ON
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3
7N60L-TA3-T 7N60G-TA3-T TO-220 G D S Tube
7N60L-TF3-T 7N60G-TF3-T TO-220F G D S Tube
7N60L-TF1-T 7N60G-TF1-T TO-220F1 G D S Tube
7N60L-TF2-T 7N60G-TF2-T TO-220F2 G D S Tube
7N60L-TF3T-T 7N60G-TF3T-T TO-220F3 G D S Tube
7N60L-T2Q-T 7N60G-T2Q-T TO-262 G D S Tube
7N60L-TQ2-T 7N60G-TQ2-T TO-263 G D S Tube
7N60L-TQ2-R 7N60G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

7N60 Power MOSFET
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MARKI NG I NFORMATI ON
PACKAGE MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
TO-263

7N60 Power MOSFET
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ABSOLUTE MAXI MUM RATI NGS (T
C
= 25C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
600 V
Gate-Source Voltage V
GSS
30 V
Avalanche Current (Note 2) I
AR
7.4 A
Drain Current
Continuous I
D
7.4 A
Pulsed (Note 2) I
DM
29.6 A
Avalanche Energy
Single Pulsed (Note 3) E
AS
530 mJ
Repetitive (Note 2) E
AR
14.2 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation
TO-220/TO-262/TO-263
P
D

142
W
TO-220F/TO-220F1
TO-220F3
48
TO-220F2 50
Junction Temperature T
J
+150 C
Storage Temperature T
STG
-55 ~ +150 C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=19.5mH, I
AS
=7.4A, V
DD
=50V, R
G
=25 , Starting T
J
= 25C
4. I
SD
7.4A, di/dt200A/s, V
DD
BV
DSS
, Starting T
J
= 25C
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
JA
62.5 C/W
Junction to Case
TO-220/TO-262/TO-263

JC

0.88
C/W
TO-220F/TO-220F1
TO-220F3
2.6
TO-220F2 2.5

7N60 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 4 of 9
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ELECTRI CAL CHARACTERI STI CS (T
C
=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250A 600 V
Drain-Source Leakage Current I
DSS
V
DS
= 600V, V
GS
= 0V 1 A
Gate- Source Leakage Current
Forward
I
GSS

V
GS
= 30V, V
DS
= 0V 100 nA
Reverse V
GS
= -30V, V
DS
= 0V -100 nA
Breakdown Voltage Temperature Coefficient BV
DSS
/T
J I
D
=250A,Referenced to 25C 0.67 V/C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
= V
GS
, I
D
= 250A 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
= 10V, I
D
= 3.7A 0.83 1.0
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS

V
DS
=25V, V
GS
=0V,
f=1.0 MHz
1200 1400 pF
Output Capacitance C
OSS
125 155 pF
Reverse Transfer Capacitance C
RSS
40 50 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)

V
DD
=300V, I
D
=7.4A,
R
G
=25 (Note 1, 2)
65 95 ns
Turn-On Rise Time t
R
180 210 ns
Turn-Off Delay Time t
D(OFF)
320 360 ns
Turn-Off Fall Time t
F
220 260 ns
SWITCHING CHARACTERISTICS
Total Gate Charge Q
G

V
DS
=480V, I
D
=7.4A,
V
GS
=10V (Note 1, 2)
210 230 nC
Gate-Source Charge Q
GS
11 nC
Gate-Drain Charge Q
GD
38 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
V
GS
= 0V, I
S
= 7.4 A 1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
7.4 A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
29.6 A
Reverse Recovery Time t
rr
V
GS
= 0V, I
S
= 7.4 A,
dI
F
/ dt = 100A/s (Note 1)
320 ns
Reverse Recovery Charge Q
RR
2.4 C
Notes: 1. Pulse Test: Pulse width 300s, Duty cycle2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
7N60 Power MOSFET
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TEST CI RCUI TS AND WAVEFORMS
Same Type
as D.U.T.
L
V
DD
Driver
V
GS
R
G
-
V
DS
D.U.T.
+
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
-
+

Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
D=
V
GS
(Driver)
I
SD
(D.U.T.)
I
FM
, Body Diode Forward Current
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
V
DD
10V
V
DS
(D.U.T.)
V
GS
=
P.W.
Period

Peak Diode Recovery dv/dt Waveforms
7N60 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6 of 9
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TEST CI RCUI TS AND WAVEFORMS (Cont .)
V
GS
D.U.T.
R
G
10V
V
DS
R
L
Pulse Width 1s
Duty Factor0.1%
V
DD

Switching Test Circuit Switching Waveforms
50k
0.3F
DUT
Same
Type as
D.U.T. 0.2F 12V
V
GS
3mA
V
DS

Gate Charge Test Circuit Gate Charge Waveform


Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

7N60 Power MOSFET
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TYPI CAL CHARACTERI STI CS
10
1
10 0.1 1
Drain-to-SourceVoltage,V
DS
(V)
On-StateCharacteristics
0.1
2
Gate-SourceVoltage,V
GS
(V)
TransferCharacteristics
4 6 8 10
10
1
0.1
VGS
Top:15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
Notes:
1.250sPulseTest
2. T
C
=25C
Notes:
1.VDS=50V
2. 250sPulseTest

0
0
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
,

R
D
S
(
O
N
)

)
DrainCurrent,I
D
(A)
2 4
1
2
4
5
6
On-ResistanceVariationvs.
DrainCurrentandGateVoltage
3
6 8 10 12
1
0.1
Source-DrainVoltage,V
SD
(V)
R
e
v
e
r
s
e
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
R
(
A
)
OnStateCurrentvs.
AllowableCaseTemperature
0.6
10
Note:T
J
=25C
Notes:
1.V
GS
=0V
2. 250sTest
V
GS
=20V
V
GS
=10V
0.2 0.4 0.8 1.0 1.2
1.4 1.6


7N60 Power MOSFET
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TYPI CAL CHARACTERI STI CS(Cont .)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
,

B
V
D
S
S

(
N
o
r
m
a
l
i
z
e
d
)

D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
,

R
D
S
(
O
N
)

(
N
o
r
m
a
l
i
z
e
d
)

SquareWavePulseDuration,t
1
(sec)
TransientThermalResponseCurve
CaseTemperature,T
C
(C)
75 100
0
125 50 25
2.5
3.75
5.0
6.25
7.5
MaximumDrainCurrentvs. Case
Temperature
1.25
150
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Notes:
1.
JC
(t)=1.18C/WMax.
2.DutyFactor,D=t1/t2
3. T
JM
-T
C
=P
DM

JC
(t)
D=0.5
0.2
0.1
0.05
0.02
0.01
SinglePulse



10
0
10
-1
10
-2
Drain-Source Voltage, V
DS
(V)
10
2
10
1
10
0
10
3
Safe Operating Area 600V
Notes:
1. TJ=25C
2. TJ=150C
3. Single Pulse
DC
10ms
1ms
100s
Operation in This Area is Limited by RDS(on)
10
1
600

7N60 Power MOSFET
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.