Professional Documents
Culture Documents
Reference Manual
SMPSRM/D
Rev. 4, Apr2014
SCILLC, 2014
Previous Edition 2002
All Rights Reserved
SMPSRM
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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2
SMPSRM
Forward
Every new electronic product, except those that are battery powered, requires converting offline
115 Vac or 230 Vac power to some dc voltage for powering the electronics. The availability of design
and application information and highly integrated semiconductor control ICs for switching power
supplies allows the designer to complete this portion of the system design quickly and easily.
Whether you are an experienced power supply designer, designing your first switching power
supply or responsible for a make or buy decision for power supplies, the variety of information
in the SwitchMode Power Supply Reference Manual should prove useful.
This reference manual contains useful background information on switching power supplies for
those who want to have more meaningful discussions and are not necessarily experts on power
supplies. It also provides real SMPS examples, and identifies several application notes and
additional design resources available from ON Semiconductor, as well as helpful books available
from various publishers and useful web sites for those who are experts and want to increase their
expertise. An extensive list and brief description of analog ICs, power transistors, rectifiers and other
discrete components available from ON Semiconductor for designing a SMPS are also provided.
For the latest updates and additional information on energy efficient power management and discrete
devices, please visit our website at www.onsemi.com.
SoftSkip is a trademark of Semiconductor Components Industries, LLC. ENERGY STAR is a registered mark U.S. mark. All brand
names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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3
SMPSRM
Table of Contents
Page
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Linear versus Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Switching Power Supply Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The ForwardMode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The FlybackMode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Common Switching Power Supply Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Interleaved Multiphase Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Selecting the Method of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
The Choice of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Bipolar Power Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Driving MOSFETs in Switching Power Supply Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
The Insulated Gate Bipolar Transistor (IGBT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
The Magnetic Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Laying Out the Printed Circuit Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Losses and Stresses in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Techniques to Improve Efficiency in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
The Synchronous Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Snubbers and Clamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
The Lossless Snubber . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
The Active Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
QuasiResonant Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Topology Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
SMPS Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Additional Documentation Available from ON Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Design Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tutorials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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67
67
68
69
SMPSRM
Introduction
(eq. 1)
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SMPSRM
LO
SW
Ion
INDUCTOR CURRENT
(AMPS)
DIODE VOLTAGE
(VOLTS)
Vin
Ioff
Cout
Rload
Vsat
Power
Switch
ON
Power
Switch
OFF
Power
Switch
ON
Power
Switch
OFF
TIME
Vfwd
Ipk
Iload
Imin
Power SW
Diode
Power SW
Diode
TIME
(Vin * Vout)
t ) iinit
L
0 v t v ton
V t
iL(off) + ipk * out
L
0 v t v toff
(eq. 3)
(eq. 2)
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SMPSRM
The FlybackMode Converter
The basic flybackmode converter uses the same
components as the basic forwardmode converter, but in
a different configuration. Consequently, it operates in a
L
Cout
Vin
Ion
SW
Ioff
Iload
Rload
Vin
Vflbk
(Vout)
SWITCH VOLTAGE
(VOLTS)
Power
Switch
ON
INDUCTOR CURRENT
(AMPS)
Vsat
Power
Switch
ON
Diode
ON
Power
Switch
ON
Diode
ON
TIME
Ipk
Iload
TIME
v t v 0on
(eq. 4)
iL(off) +
Vin ton
L
(Vin * Vout)
L
(eq. 6)
(eq. 5)
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SMPSRM
When there is some residual energy permitted to
remain within the inductor core, the operation is called
continuous mode. This can be seen in Figure 3.
Energy for the entire on and off time periods must be
stored within the inductor. The stored energy is defined
by:
EL + 0.5L @ ipk2
(eq. 7)
SWITCH VOLTAGE
(VOLTS)
Vflbk
(Vout)
Vin
Power
Switch
ON
Power
Switch
ON
Diode
ON
Diode
ON
INDUCTOR CURRENT
(AMPS)
TIME
Vsat
Ipk
TIME
Common Switching
Power Supply Topologies
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SMPSRM
Cost is a major factor that enters into the topology
decision. There are large overlaps in the performance
boundaries between the topologies. Sometimes the most
costeffective choice is to purposely design one topology
to operate in a region that usually is performed by
another. This, though, may affect the reliability of the
desired topology.
Figure 4 shows where the common topologies are used
for a given level of DC input voltage and required output
power. Figures 5 through 12 show the common
topologies. There are more topologies than shown, such
as the Sepic and the Cuk, but they are not commonly
used.
1000
HalfBridge
100
Flyback
FullBridge
42.5
NonIsolated
10
FullBridge
Very High
Buck
Peak Currents
10
100
1000
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SMPSRM
L
Power Switch
+
D
Vin
Cin
Cout
Control
VFWD
VD
0
TIME
Vin
IPK
Vout
IL
Feedback
TIME
ILOAD
IMIN
VFLBK
+
SW
Control
D
ON
SW ON
Cin
Vin
D
ON
VSAT
VSW
Cout
Vout
Vin
IPK
IL
TIME
ISW
ID
TIME
+
Control
Vin
VL
SW
Cin
L
Vin
TIME
Cout
Vout
Vout
+
Feedback
IL
ISW
ID
TIME
IPK
VSAT
VSW
+
Vin
Cin
Control
N2
TIME
0
Vin
D
N1
SW
ON
Cout
+
Vout
IPRI
SW
Feedback
ISEC
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10
IPK
TIME
TIME
SMPSRM
+
LO
T
N2
N1
Cout
Cin
Vin
Vout
SW
Control
Feedback
VSW
SW
ON
0
VSAT
TIME
2Vin
IPRI
0
TIME
IMIN
IPK
SW1
D1
+
Vin
LO
D2
Cout
SW2
Cin
Control
Feedback
2Vin
SW2
Vin
VSW
SW1
TIME
VSAT
IPK
IPRI
Vout
TIME
IMIN
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SMPSRM
LO
Ds
+
Cout
+
Vout
N2
XFMR
Cin
SW1
Control
Vin
T
N1
SW2
C
C
Feedback
Vin
SW1
V in
2
SW2
VSW2 0
TIME
VSAT
IPK
IPRI
TIME
0
IMIN
+
Cout
+
XFMR
Vin
Vout
Cin
N2
SW1
T
N1
Control
SW3
XFMR
C
SW4
SW2
Vin
SW
V in
2
1-4
SW
VSW2 0
2-3
TIME
VSAT
IPK
ISW2
0
TIME
IMIN
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SMPSRM
+5 V
+5 V
15 VCC
PVCC 21
25 GND
PGND 22
VIN
+3.3 V
HG1
BST1
VOUT
PH1 24
EN
EN
PSI
PSI
PG
LG1 23
VIN
16 PGOOD
NCP81172
TALT
14 TALERT#
HG2 17
VID
VID
BST2 18
13 TSNS
PH2 19
LG2 20
VREF
REFIN
VIDBUF
FS
FBRTN 10
FB 11
COMP 12
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SMPSRM
OC Protection
Response Time
Preferred Topologies
Average OC
Slow
ForwardMode
PulsebyPulse OC
Slow
ForwardMode
Intrinsic
Rapid
BoostMode
Hysteretic
Rapid
Average
Slow
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SMPSRM
VCC
OSC
Charge
Verror
Discharge
Ct
Volt
Comp.
Output
Gating
Logic
Verror Amp.
VFB
+
+
Pulsewidth
Comparator
Vref
Steering
Average
Overcurrent
Protection
Cur.
Comp.
Iout (lavOC)
or
ISW (PPOC)
Clock Ramp
Current Amp.
RCS
PulsebyPulse
Overcurrent
Protection
VOC
VSS
Ct
+
Discharge
Volt
Comp.
Output
Gating
Logic
S
Verror Amp.
VFB
+
+
Vref
Verror
Output
Current
Comparator
+
ISW
Verror
RCS
VSS
Ipk
ISW
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SMPSRM
Power Switches
The choice of which semiconductor technology to use
for the power switch function is influenced by many
factors such as cost, peak voltage and current, frequency
of operation, and heatsinking. Each technology has its
own peculiarities that must be addressed during the
design phase.
There are three major power switch choices: the
bipolar junction transistor (BJT), the power MOSFET,
and the integrated gate bipolar transistor (IGBT). The
BJT was the first power switch to be used in this field and
still offers many cost advantages over the others. It is also
still used for very low cost or in high power switching
converters. The maximum frequency of operation of
bipolar transistors is less than 80100 kHz because of
some of their switching characteristics. The IGBT is used
for high power switching converters, displacing many of
the BJT applications. They too, though, have a slower
switching characteristic which limits their frequency of
operation to below 30 kHz typically although some can
reach 100 kHz. IGBTs have smaller die areas than power
MOSFETs of the same ratings, which typically means a
lower cost. Power MOSFETs are used in the majority of
applications due to their ease of use and their higher
frequency capabilities. Each of the technologies will be
reviewed.
(eq. 8)
VBB
100 pF
Control IC
100 pF
Control IC
VCE
+
VBE
Power Ground
Power Ground
(a) Fixed Base Drive Circuit
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SMPSRM
CDG
Coss
CGS
TURN
ON
t1
VDR
t3
t2
t2
VGS
0
TURNOFF
t3
Vth
t1
Vpl
VDS
0
IG
+
0
Figure 18. Typical MOSFET Drive Waveforms (Top: VGS, Middle: VDG, Bottom: IG)
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SMPSRM
Driving MOSFETs in Switching
Power Supply Applications
There are three things that are very important in the
high frequency driving of MOSFETs: there must be a
totempole driver; the drive voltage source must be well
bypassed; and the drive devices must be able to source
high levels of current in very short periods of time (low
compliance). The optimal drive circuit is shown in
Figure 19.
VG
VG
LOAD
LOAD
Ron
Roff
a. Passive TurnON
VG
b. Passive TurnOFF
VG
LOAD
c. Bipolar Totempole
LOAD
d. MOS Totempole
Figure 19. Bipolar and FETBased Drive Circuits (a. Bipolar Drivers, b. MOSFET Drivers)
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SMPSRM
Sometimes it is necessary to provide a
dielectricallyisolated drive to a MOSFET. This is
provided by a drive transformer. Transformers driven
from a DC source must be capacitively coupled from the
totempole driver circuit. The secondary winding must
be capacitively coupled to the gate with a DC restoration
VG
RG
1k
C
1:1
C > 10
Ciss
Rectifiers
Rectifiers represent about 60 percent of the losses in
nonsynchronous switching power supplies. Their choice
has a very large effect on the efficiency of the power
supply.
The significant rectifier parameters that affect the
operation of switching power supplies are:
forward voltage drop (Vf), which is the voltage
across the diode when a forward current is flowing
the reverse recovery time (trr), which is how long it
requires a diode to clear the minority charges from
its junction area and turn off when a reverse voltage
is applied
the forward recovery time (tfrr) which is how long it
take a diode to begin to conduct forward current
after a forward voltage is applied.
There are four choices of rectifier technologies:
standard, fast and ultrafast recovery types, and Schottky
barrier types.
A standard recovery diode is only suitable for
5060 Hz rectification due to its slow turnoff
characteristics. These include common families such as
the 1N4000 series diodes. Fastrecovery diodes were
first used in switching power supplies, but their turnoff
time is considered too slow for most modern
applications. They may find application where low cost
is paramount, however. Ultrafast recovery diodes turn
off quickly and have a forward voltage drop of 0.8 to
1.3 V, together with a high reverse voltage capability of
up to 1000 V. A Schottky rectifier turns off very quickly
and has an average forward voltage drop of between 0.35
and 0.8 V, but has a low reverse breakdown voltage and
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19
SMPSRM
a high reverse leakage current. For a typical switching
power supply application, the best choice is usually a
Schottky rectifier for output voltages less than 12 V, and
an ultrafast recovery diode for all other output voltages.
The major losses within output rectifiers are
conduction losses and switching losses. The conduction
loss is the forward voltage drop times the current flowing
through it during its conduction period. This can be
significant if its voltage drop and current are high. The
switching losses are determined by how fast a diode turns
off (trr) times the reverse voltage across the rectifier. This
can be significant for high output voltages and currents.
Average Vf
Typical Applications
Standard Recovery
Fast Recovery
0.71.0 V
1,000 ns
5060 Hz Rectification
1.01.2 V
150200 ns
Output Rectification
UltraFast Recovery
0.91.4 V
2575 ns
Output Rectification
(Vo > 12 V)
Schottky
0.30.8 V
< 10 ns
Output Rectification
(Vo < 12 V)
Bipolar Pwr Sw
IC
VDSS
Vin
Iout
Boost
Vout
(2.0 Pout)
Vin(min)
Buck/Boost
Vin * Vout
Buck
Flyback
VCEO
MOSFET Pwr Sw
1.7 Vin(max)
Rectifier
ID
VR
IF
Vin
Iout
Vin
Iout
Vout
(2.0 Pout)
Vin(min)
Vout
Iout
Vin(min)
Vin * Vout
(2.0 Pout)
Vin(min)
Vin * Vout
Iout
(2.0 Pout)
Vin(min)
1.5 Vin(max)
(2.0 Pout)
Vin(min)
5.0 Vout
Iout
2.0 Pout
1 Transistor
Forward
2.0 Vin
(1.5 Pout)
Vin(min)
2.0 Vin
(1.5 Pout)
Vin(min)
3.0 Vout
Iout
PushPull
2.0 Vin
(1.2 Pout)
Vin(min)
2.0 Vin
(1.2 Pout)
Vin(min)
2.0 Vout
Iout
HalfBridge
Vin
(2.0 Pout)
Vin(min)
Vin
(2.0 Pout)
Vin(min)
2.0 Vout
Iout
FullBridge
Vin
(1.2 Pout)
Vin(min)
Vin
(2.0 Pout)
Vin(min)
2.0 Vout
Iout
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SMPSRM
website: www.coiltronics.com
Telephone: 5612417876
Cramer Coil, Inc.
website: www.cramerco.com
email: techsales@cramercoil.com
Telephone: 2622682150
Pulse, Inc.
website: www.pulseeng.com
Telephone: 8586748100
TDK
website: www.component.talk.com
Telephone: 8478036100
Wrth Elektronik
website: www.weonline.com
email: cbt@weonline.com
Telephone: +49 7940 9460
CoilCraft, Inc.
website: www.coilcraft.com/
email: info@coilcraft.com
Telephone: 8476396400
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21
SMPSRM
Within all switching power supplies, there are four
major current loops. Two of the loops conduct the
highlevel AC currents needed by the supply. These are
the power switch AC current loop and the output rectifier
AC current loop. The currents are the typical trapezoidal
current pulses with very high peak currents and very
rapid di/dts. The other two current loops are the input
source and the output load current loops, which carry low
frequency current being supplied from the voltage source
and to the load respectively.
For the power switch AC current loop, current flows
from the input filter capacitor through the inductor or
transformer winding, through the power switch and back
to the negative pin of the input capacitor. Similarly, the
output rectifier current loops current flows from the
inductor or secondary transformer winding, through the
Power Switch
Current Loop
Output Rectifier
Current Loop
Vout
SW
Input Current
Loop
Output Load
Current Loop
+
Vin
VFB
Control
Cin
Cout
GND C
Analog
A
Input Source
Ground
B
Power
Switch Ground
Join
Output Load
Ground
Output Rectifier
Ground
Join
Join
(a) The NonIsolated DC/DC Converter
Output Rectifier
Current Loop
Power Switch
Current Loop
Input Current
Loop
Vout
Cin
Control
FB
RCS
Analog
GND
C
A
Input Source
Ground
VFB
Cout
SW
+
Vin
Output Load
Current Loop
B
Output Rectifier
Ground
Output Load
Ground
Join
Join
Figure 21. The Current Loops and Grounds for the Major Converter Topologies
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SMPSRM
The last important factor in the PCB design is the
layout surrounding the AC voltage nodes. These are the
drain of the power MOSFET (or collector of a BJT) and
the anode of the output rectifier(s). These nodes can
capacitively couple into any trace on different layers of
the PCB that run underneath the AC pad. In surface
mount designs, these nodes also need to be large enough
to provide heatsinking for the power switch or rectifier.
This is at odds with the desire to keep the pad as small as
possible to discourage capacitive coupling to other
traces. One good compromise is to make all layers below
the AC node identical to the AC node and connect them
with many vias (platedthrough holes). This greatly
increases the thermal mass of the pad for improved
heatsinking and locates any surrounding traces off
laterally where the coupling capacitance is much smaller.
An example of this can be seen in Figure 22.
Many times it is necessary to parallel filter capacitors
to reduce the amount of RMS ripple current each
capacitor experiences. Close attention should be paid to
this layout. If the paralleled capacitors are in a line, the
capacitor closest to the source of the ripple current will
operate hotter than the others, shortening its operating
life; the others will not see this level of AC current. To
ensure that they will evenly share the ripple current,
ideally, any paralleled capacitors should be laid out in a
radiallysymmetric manner around the current source,
typically a rectifier or power switch.
The PCB layout, if not done properly, can ruin a good
paper design. It is important to follow these basic
guidelines and monitor the layout every step of the
process.
Power Device
Via
PCB Top
PlatedThru Hole
PCB Bottom
Figure 22. Method for Minimizing AC Capacitive Coupling and Enhancing Heatsinking
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FALL
TIME
STORAGE
TIME
CLEARING
RECTIFIERS
SATURATION
CURRENT
SATURATION
LOSS
TURN-OFF LOSS
SWITCHING LOSS
IPEAK
CURRENT
TAIL
CURRENT
CROWDING
PERIOD
SECOND
BREAKDOWN
PERIOD
TURN-ON
LOSS
TURN-OFF
CURRENT
FALL
TIME
CLEARING
RECTIFIERS
IPEAK
ON VOLTAGE
RISE
TIME
INSTANTANEOUS ENERGY
LOSS (JOULES)
INSTANTANEOUS ENERGY
LOSS (JOULES)
COLLECTOR CURRENT
(AMPS)
RISE
DYNAMIC
TIME SATURATION
DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
SATURATION
VOLTAGE
VPEAK
DRAIN CURRENT
(AMPS)
COLLECTOR-TO-EMITTER
(VOLTS)
VPEAK
TURN-OFF
CURRENT
ON LOSS
TURN-ON
LOSS
TURN-OFF LOSS
SWITCHING LOSS
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creates a very large VI product which is as significant as
the conduction losses. Switching losses are also the major
frequency dependent loss within every PWM switching
power supply.
The lossinduced heat generation causes stress within
the power component. This can be minimized by an
effective thermal design. For bipolar power transistors,
however, excessive switching losses can also provide a
lethal stress to the transistor in the form of second
breakdown and current crowding failures. Care should be
taken in the careful analysis of each transistors Forward
BiasedSafe Operating Area (FBSOA) and Reverse
BiasedSafe Operating Area (RBSOA) operation.
DIODE VOLTAGE
(VOLTS)
FORWARD VOLTAGE
REVERSE VOLTAGE
DIODE CURRENT
(AMPS)
IPK
INSTANTANEOUS ENERGY
LOSS (JOULES)
FORWARD
RECOVERY
TIME (Tfr)
REVERSE
RECOVERY
TIME (Trr)
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typical switching power supply.
The synchronous rectifier can be driven either actively,
that is directly controlled from the control IC, or
passively, driven from other signals within the power
circuit. It is very important to provide a nonoverlapping
drive between the power switch(es) and the synchronous
rectifier(s) to prevent any shootthrough currents. This
dead time is usually between 50 to 100 ns. Some typical
circuits can be seen in Figure 26.
+ Vout
SW
Drive
GND
Direct
SR
RG
C
VG
C
1k
1:1
C > 10 Ciss
TransformerIsolated
(a) Actively Driven Synchronous Rectifiers
LO
+ Vout
Primary
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Snubbers and Clamps
Snubbers and clamps are used for two very different
purposes. When misapplied, the reliability of the
semiconductors within the power supply is greatly
jeopardized.
A snubber is used to reduce the level of a voltage spike
and decrease the rate of change of a voltage waveform.
This then reduces the amount of overlap of the voltage
and current waveforms during a transition, thus reducing
the switching loss. This has its benefits in the Safe
Operating Area (SOA) of the semiconductors, and it
reduces emissions by lowering the spectral content of any
RFI.
A clamp is used only for reducing the level of a voltage
spike. It has no affect on the dV/dt of the transition.
ZENER
CLAMP
SOFT
CLAMP
SNUBBER
SNUBBER
SOFT
CLAMP
ZENER
CLAMP
Figure 27. Common Methods for Controlling Voltage Spikes and/or RFI
VOLTAGE (VOLTS)
CLAMP
SNUBBER
ORIGINAL
WAVEFORM
t, TIME (sec)
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The Lossless Snubber
A lossless snubber is a snubber whose trapped energy
is recovered by the power circuit. The lossless snubber is
designed to absorb a fixed amount of energy from the
transition of a switched AC voltage node. This energy is
stored in a capacitor whose size dictates how much
energy the snubber can absorb. A typical implementation
of a lossless snubber can be seen in Figure 29.
The design for a lossless snubber varies from topology
to topology and for each desired transition. Some
adaptation may be necessary for each circuit. The
important factors in the design of a lossless snubber are:
1. The snubber must have initial conditions that
allow it to operate during the desired transition
and at the desired voltages. Lossless snubbers
should be emptied of their energy prior to the
desired transition. The voltage to which it is
reset dictates where the snubber will begin to
operate. So if the snubber is reset to the input
voltage, then it will act as a lossless clamp which
will remove any spikes above the input voltage.
Unsnubbed VSW
+
VSW
Snubbed VSW
ID
Figure 29. Lossless Snubber for a One Transistor Forward or Flyback Converter
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The Active Clamp
An active clamp is a gated MOSFET circuit that allows
the controller IC to activate a clamp or a snubber circuit
at a particular moment in a switching power supplys
cycle of operation. An active clamp for a flyback
converter is shown in Figure 30.
In Figure 30, the active clamp is reset (or emptied of its
Unclamped
Switch Voltage
(VSW)
Clamped Switch
Voltage (VSW)
Vin
Switch
Current (ISW)
+
ICL
VDR
ISW
VSW
GND
Drive
Voltage (VDR)
Discharge
Charge
Clamp
Current (ICL)
Figure 30. An Active Clamp Used in a One Transistor Forward or a Flyback Converter
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QuasiResonant Topologies
A quasiresonant topology is designed to reduce or
eliminate the frequencydependent switching losses
within the power switches and rectifiers. Switching
losses account for about 40% of the total loss within a
PWM power supply and are proportional to the switching
frequency. Eliminating these losses allows the designer
to increase the operating frequency of the switching
power supply and so use smaller inductors and
capacitors, reducing size and weight. In addition, RFI
levels are reduced due to the controlled rate of change of
current or voltage.
The downside to quasiresonant designs is that they
are more complex than nonresonant topologies due to
parasitic RF effects that must be considered when
ILR
LR
Vin
Cin
LO
CR
VSW
D
Cout
CONTROL
Vout
FEEDBACK
V SW
SWITCH
TURN-OFF
Vin
POWER SWITCH
ON
VD
I LR
IPK
Figure 31. Schematic and Waveforms for a ZCS Quasi-Resonant Buck Converter
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power delivered to the load, the amount of resonant off
times are varied. For light loads, the frequency is high.
When the load is heavy, the frequency drops. In a typical
ZVS power supply, the frequency typically varies 4:1
over the entire operating range of the supply.
There are other variations on the resonant theme that
promote zero switching losses, such as full resonant
PWM, full and halfbridge topologies for higher power
and resonant transition topologies. For a more detailed
treatment, see Chapter 4 in the Power Supply
Cookbook (Bibliography reference 3).
LR
LO
CR
Vin
Cin
VI/P
FEEDBACK
CONTROL
V I/P
Vin
POWER SWITCH
TURNS ON
V
I SW
IPK
L
V
L
*V
out
)L
in
R
ILOAD
ID
in
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Cout
Vout
SMPSRM
VOLTAGE
Power
not used
Power used
110/220
AC VOLTS IN
I
+
CURRENT
Clarge
IAV
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32
DC To Power
Supply
SMPSRM
pulses generate more heat than a purely resistive load of
the same power. The active power factor correction
circuit is placed just following the AC rectifier bridge. An
example can be seen in Figure 34.
Depending upon how much power is drawn by the unit,
there is a choice of three different common control
modes. All of the schematics for the power sections are
the same, but the value of the PFC inductor and the
control method are different. For input currents of less
than 150 watts, a discontinuousmode control scheme is
typically used, in which the PFC core is completely
emptied prior to the next power switch conduction cycle.
For powers between 150 and 250 watts, the critical
conduction mode is recommended. This is a method of
control where the control IC senses just when the PFC
core is emptied of its energy and the next power switch
conduction cycle is immediately begun; this eliminates
any dead time exhibited in the discontinuousmode of
control. For an input power greater than 250 watts, the
continuousmode of control is recommended. Here the
peak currents can be lowered by the use of a larger
inductor, but a troublesome reverse recovery
characteristic of the output rectifier is encountered,
which can add an additional 2040 percent in losses to the
PFC circuit.
Many countries cooperate in the coordination of their
power factor requirements. The most appropriate
document is IEC6100032, which encompasses the
performance of generalized electronic products. There
are more detailed specifications for particular products
made for special markets.
Vout
Vsense
Csmall
+
Control
Conduction Angle
Voltage
Current
IAVG
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Clarge
To Power
Supply
SMPSRM
Bibliography
1. ON Semiconductor, Power Factor Correction (PFC) Handbook, HBD853/D, 2012.
2. BenYaakov Sam, Gregory Ivensky, Passive Lossless Snubbers for High Frequency PWM Converters,
Seminar 12, APEC 99.
3. Brown, Marty, Power Supply Cookbook, ButterworthHeinemann, 1994, 2001.
4. Brown, Marty, Laying Out PC Boards for Embedded Switching Supplies, Electronic Design, Dec. 1999.
5. Martin, Robert F., Harmonic Currents, Compliance Engineering 1999 Annual Resources Guide, Cannon
Communications, LLC, pp. 103107.
6. Christophe Basso, SwitchMode Power Supplies, SPICE Simulations and Practical Designs, McGrawHill,
2008, ISBN 9780071508599.
7. Christophe Basso, Designing Control Loops for Linear and Switching Power Supplies: A Tutorial Guide,
Artech House, 2012, ISBN 9781608075577.
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Topology Overview
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53
54
56
57
58
59
60
61
62
63
64
65
66
Some of these circuits may have a more complete application note, spice model information or even an evaluation board
available. Consult ON Semiconductors website (www.onsemi.com) or local sales office for more information.
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51
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Ultrafast
Rectifier
Startup
Switch
Rectifier
Bulk
Storage
Capacitor
PWM
Control
IC
AC
Line
Load
MOSFET
noutputs
Prog.
Prec.
Ref
PWM Switcher
Figure 37. Up to 25 W Flyback
Product
Description
App
Notes
Design &
Development
Tools
Design
Notes
Eval
Board
Reference
Designs
Videos
White
Papers
NCP1014
NCP1013
NCP1012
NCP1072
NCP1075
NCP1011
NCP1010
Product
Description
App
Notes
Design &
Development
Tools
Design
Notes
Eval
Board
NCP1250
NCP1251
NCP1253
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Ultrafast
Rectifier
Startup
Switch
Rectifier
Bulk
Storage
Capacitor
AC
Line
PWM
Control
IC
Load
MOSFET
noutputs
Prog.
Prec.
Ref
PWM Switcher
Figure 38. 25 to 150 W Flyback
Product
Description
App
Notes
Design &
Development
Tools
Design
Notes
Eval
Board
NCP1219
NCP1234
NCP1236
NCP1244
NCP1246
NCP1249
NCP1255
NCP1271
NCP1927
Videos
Product
Description
NCP1336
NCP1337
App
Notes
Design &
Development
Tools
Eval
Board
Reference
Designs
Videos
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Table 4.QuasiResonant Switching Controllers Selection
Technical Documentation and Design Resources
App
Notes
Design &
Development
Tools
NCP1338
NCP1377
NCP1379
NCP1380
Product
Description
Eval
Board
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Videos
Reference
Designs
SMPSRM
R18
Product
Description
App
Notes
Design &
Development
Tools
Eval
Board
Reference
Designs
NCP1392
NCP1393
NCP1395
NCP1396
NCP1397
NCP1398
NCP1910
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Videos
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RSTART1
DBOOST
LBOOST
J3
NTC
C2
C3
D1
DAUX
CIN
CVCC
RO1A
DVCC
RZCD
RCTUP2
RO1B
CBULK
L2
C1
R1
RCTUP1
J2
BRIDGE
J1
RCOMP1
CCOMP1
RCT
1 FB
CVCC2
DDRV
Vcc 8
3 Ct
GND 6
4 CS
ZCD 5
RDRV
RCS
CT2
CT1
CCS
Q1
2 CTRL DRV 7
RS1
RS2
RS3
CZCD
ROUT2B
CCOMP
U1
NCP1607
ROUT2A
L1
~
F1
Description
Value
Footprint
Manufacturer
Part Number
U1
NCP1607
SOIC8
NCP1607BDR2G
D1
100 V
SOD123
MMSD4148T1G
DAUX
Diode, Zener
18 V
SOD123
MMSZ4705T1G
DBOOST
Diode, Ultrafast
4 A, 600 V
Axial
MUR460RLG
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120 W High Efficiency, High Voltage, Active X2, <30 mW No Load PFC
The NCP1615 is a high voltage PFC controller designed to drive PFC boost stages based on an innovative Current
Controlled Frequency Foldback (CCFF) method. In this mode, the circuit classically operates in critical conduction
mode (CrM) when the inductor current exceeds a programmable value. CCFF maximizes the efficiency at both nominal
and light load. In particular, the standby losses are reduced to a minimum. An innovative circuitry allows near unity
power factor even when the switching frequency is reduced.
The integrated high voltage startup circuit eliminates the need for external startup components and consumes
negligible power during normal operation. Housed in a SOIC16 package, the NCP1615C also incorporates the features
necessary for robust and compact PFC stages, with few external components.
VIN
TP1
PFCOK
VIN
J2
R24
R22
Vin
J4
Ext. VCC
TP2
STBY
STBY
HV
D8
EXT_VCC
MMSD4148
C13
R16
10 nF
27
VAUX
1nF
DRV
12
PSM
PSM
N/A
VCC
R17
GND
STDBY
C14
DRV
13
27k
VCC
VCONTROL
14
STDBY
MMSD4148
FAULT
21
22 V
FOVP/BUV
C11
10 uF
TP3
STBY
1k
D7
CS/ZCD
ZD3
RESTART
6 FFCONTROL
9
PSTIMER
R15
C9
220 nF
120k
C10
270k
R14
R13 220 nF
27k
2.2 uF
C8
R12
PFCOK
PFCOK
R20
HVFB
ZD2
HV
21
33 V
11
C7
220k
RT2
R25
1
1k
220 uF/50 V
C15
0.1 uF
10
J3
1
1k
C6
21
100 uF/450 V
681k
R21
1.8Meg
3
Q3
2 R27
FB
21
26 V
ZD1
16
J1
STDBY
HV
1nF/Y2
PPCOK
R18
R7
R23
N/A
C3
3A
DRV
3
R6
1nF/Y2
F1
22
VCC
C4
2 MMSD4148
PFCOK
HV
470 V
EXT_VCC
R11
Q2
10k
100 pF
4.7k
/A
RV1
2.2
R9
D6
1.8Meg
3 3
R8
2
1
D2
12
MRA4007
D1
N/AN
12
100 nF/X2
R1
R2
MRA4007
R5
1k
C16
4.7k
2
150 uH
L1
D3
1k
C1
1k
R26
1
1
R4
R3
R10
15
22
1
MMSD4148
L2
23
Q1
IPA50R250
VAUX
HS1
14
RT1
220 nF
21 C12
220 nF/X2
D5
MUR550
4.99 Meg
21
80 m / 3 W
+
C5
C2
1N5406
470 nF
D4
21
L3
200 uH
TP4
HV
Ext. VCC
Figure 41. 120 W High Efficiency, High Voltage, Active X2, <30 mW No Load PFC
Table 7. Key Devices
Designator
Description
Value
Tolerance
Footprint
Manufacturer
Part Number
Q3
BJT, NPN
?? V/200 mA
SOT23
MMBT3904LT1G
Q2
BJT, PNP
30 V/1 A
SOT23
MMBT589LT1G
D4
600 V/3 A
DO201AD
1N5406G
?? V/200 mA
SOD123
MMSD4148T1G
ZD3
Diode, Zener
22 V
500 mW
SOD123
MMSZ22T1G
ZD1
Diode, Zener
27 V
500 mW
SOD123
MMSZ27T1G
ZD2
Diode, Zener
33 V
500 mW
SOD123
MMSZ33T1G
D1, D2
Diode, Rectifier
1000 V/1 A
SMA
MRA4007T3G
D5
520 V/5 A
DO201AD
MUR550APFRLG
U1
PFC Controller
SO16NB
NCP1615C
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390 V
2
C4
180 F, 450 V
+
D1
TB3
MSR860G
SPP20N60S5
Q1
R1
C9
D2
10 k
R2
C8
+
+15 V
1N4148
R4
1.8 M
1.8 M
R5
22 F
C10
0.1 F
10
100 pF
R3
R12 C12
12 k C5
5
220 nF
NCP1654
IC1
0.1
2
VM
GND
1
2
4
BO
R6
CS
650 H
L1
Vcontrol
FB
DRV
VCC
23.2 k
2.2 F
R8
47 k
R7
1 nF
3.6 k
0.1 F
GBU8J
600 V
+
8A
DB1
C6
R9
R13
R10
R11
3.3 M
3.3 M
82.5 k
C7
C3
0.47 F
*
C2
0.47 F
2 x 6.8 mH
L2
L3
150 H
C1
0.47 F
5 A Fuse
F1
1
2
L
AC Inlet
3
N
TB1
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L1A
1 mH
J1
C1
AC 0.1 uF
Input
X
R1
4.7
3W
C2
0.1 uF
X
L1B
T1
R2A
3.3 M
D1 D4
MRA4007
x4
R2B
3.3 M
R3
68 K
1/2 W
C3
22 uF
400 V
U1
C4
1 nF
1 kV
D5
1N4937
NCP1075
(100 kHz)
C5
22 uF
25 V
NOTES:
C9A
D7 C10
0.1
50 V
1 mH
Primary
Ground
Plane
MBRS260T3
R4
1K
D6
C6
4.7 uF
50 V
R5
10
C8
C7
1 nF
C11
0.1 uF
50 V
R16
3K
J2
Vout
1000 uF, 16 V
MMSD4148A
1 nF
Y1
C9B
R6
1K
R8
82.5 K
R10
21.5 K
R7
20 K
U2
C12
0.1
U3
NCP431
R9
21.5 K
Description
Value
Footprint
Manufacturer
Part Number
D7 (12 V Out)
Schottky Diode
2 A, 60 V
SMB
MBRS260T3
D7 (5 V Out)
Schottky Diode
3 A, 40 V
SMB
MBRS2040L
Diode, 60 Hz
1 A, 800 V
SMA
MRA4007
D5
1 A, 800 V
Axial Lead
1N4937
D6
Signal Diode
SOD123
MMSD4148A
U3
Programmable Zener
2.5 V
SOIC8, SOT23
NCP431A
U1
Switcher IC
100 kHz
SOT223
NCP1075STBT3G
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F1
2A
250 Vac
J1
C1
AC 0.1 uF
Input
X2
T1
L1A
820 uH
R4
1M
0.5 W
L1B
R5
820 uH 1 M
R1
4.7 W
3W
C2
0.1 uF
X2
D1 D4
MRA4007
x4
R7
3M
0.5 W
C3
47 uF
400 V
U1
NU
FB
VCC
R3
5.6 K
R8
47 K
1W
C4
10 nF
1 kV
1N4937
D5
R6
5.6 K
C5
4.7 uF
D8
(TO220)
D
NCP1129
R10
2.4 K
C7
100 pF
D6
MMSD4148A
C9B
C9C
C11
0.1 uF
50 V
J2
Vout
1000 uF, 16 V
S
C13
R9A/B
0.5 W
1 nF
Y1
1 Ohm x 2
R12
D7
2.0
C6
R11 4.7 uF
50
V
0 Ohms
C9A
C14
0.1
GND
Is
Z1
25 V C6
1 nF
C10 R13
1 nF 33
R14
1K
R15
15 K
1N4937
R17
39 K
R16
20 K
U2
C12
0.1
U3
NCP431
R18
10 K
Description
Value
Footprint
Manufacturer
Part Number
D8
Schottky Diode
20 A, 100 V
TO220
NTST20100CTG
Diode, 60 Hz
1 A, 800 V
SMA
MRA4007
D5, D7
1 A, 600 V
Axial Lead
1N4937
D6
Signal Diode
SOD123
MMSD4148A
Z1 (Optional)
Zener Diode
25 V
SOD123
MMSZ5253B
U3
Programmable Zener
2.5 V
SOT23
NCP431A
U1
Controller
65 kHz
DIP8
NCP1129
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Description
Tolerance
Footprint
Manufacturer
Part Number
D1
DO4110B
1N4007G
D100, D102,
D103, D104,
D105, D108
SMA
MRD4007T3G
D101, D107
Diode
SOD123
MMSD4148T3G
D106
Zener Diode
5%
SOD123
MMSZ15T3G
NTST30100SG
D2
TO220
IC1
TO92
TL431BCLPG
IC100
SMPS Controller
SOIC8
NCP1236BD65R2G
www.onsemi.com
62
SMPSRM
R18
80
12
D6
P6KE220
30
24
32 V
aux.
19
R13
10
IN
R19
820k
34
C13
47uF
31
L1
R16
331k
7,8
C2
680uF
R3
1k
0V
21
D1
M UR160
D4
1N4148
U1
Eri s
D2
M URD530
11,12
R12
0
33
27
.
.
26
2 x 27 mH
Schaf f ner RN1140.8/02
23
D3
1N4937
R14
2.2M eg
R20
390k
16
44
IC4
KBU406
C1
33nF
200 V
25
C7
100uF
C12 X2
470n
R9ab c
1M eg
R35a bc
1M eg
3 x3 30 k
3 x3 30 k
13
F1
250V
T ype = 2AT
Q1
ST P7Nk80ZFP
17
R6
22
C10
47p
U2B
11
R15
1k
C5
1nF
C9
22n
18
10
20
C4
220pF
C6
1u
R5
80k
C3
10uF
R7
4.3k
R17
118k
R10
1k
4
35
R1
2.2k
U2A
S FH6 1 5 A
Q2
2N2907
C15
0.1uF
85260 Vac
15
C8
100p
1 kV
14
R24
not wi red
R2a
1.5
0 .5 W
R2b
1.5
0 .5 W
D5
1N973
C14
2.2nF
22
36
U3
NCP431
R11
10k
Y1
Manufacturer
Part Number
Ultrafast Diode
Axial
MUR160RLG
Rectifier
DPAK4
MURD530
Designator
Description
D1
D2
D3
Rectifier
Axial
1N4937RLG
U1
PWM Controller
SOIC8
NCP1255BD65R2G
U3
Shunt Regulator
SMD
NCP431ACSNT1G
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63
SMPSRM
The NCP1398 is a high performance controller for half bridge LLC resonant converters. The integrated high voltage
gate driver simplifies layout and reduces external component count. A unique architecture, which includes a 750 kHz
Voltage Controlled Oscillator whose control mode permits flexibility when an ORing function is required allows the
NCP1398 to deliver everything needed to build a reliable and rugged resonant mode power supply.
In association with NCP1607/08 CRM Boost PFC Controller and NCP1027 high integrated HV switching regulator
they offer a complete solution.
AC2
AC1
FB
VCC
COMP DRV
MULT GND
CS
ZCD
BO
VBOOT
CTIMER
HB
DISCH MUPP
FMAX
VCC
RT
DT
GND
FB
MLOW
SKIP/DIS OLP
P$4
P$5
P$1
P$3
P$8
P$2
P$4
P$5
P$1
P$3
VCC GND
R.C OPP
BO
FB
D
P$8
P$2
Description
Tolerance
Footprint
Manufacturer
Part Number
Switching Diode
SOD123
MMSD4148T3G
D2
Axial Lead
1N5408RLG
Diode
SMC
MBRS4201T3G
D4
TO220FP
MSRF860G
D10
Schottky Rectifier
TO220FP
MBRF20100CTG
MBRS320T3G
D17
Diode
SMC
D19
Zener Diode
5%
SOD123
MMSZ16T1G
IC1
PFC Controller
SOIC8
NCP1607BDR2G
IC2, IC5
TO92
TL431BCLPG
IC3
Resonant Controller
SOIC16
NCP1398BDR2G
IC4
PDIP8
NCP1027P065G
www.onsemi.com
64
SMPSRM
Q1 BSS84
10k
D1
R16
1.62 MEG
R12
R20
499k
C15 150p
R21
C27
10n
PFBLV 18
R13
R13A
0.4
0.4
QFB
6 PONOFF
PDRV 15
7 QCT
QDRV 14
8 FAULT
QCS 13
9 PSTIMER
VCC 12
0
R22
C16
R23
750k
R24
0.47u
80.6k
C18
100p
2k
47p
4
3
15k
R30
15k
2
R28
VSNS 1
GND
OFFDET 2
FBC
ON/OFF
U4
R36
VMIN 3
LED 4
14.3k
NCP4355
1k
1n
C8
R39
249
VAUX
47u
HS2
D10
D9
C4
10n
R25
14.3k
VCC
U3
R14
C10
1
2
MMSD4148
C17
R38
2.32k
R37
22n
8
C9
VCC
0.1u
PSTIMER
C29
TBD
R35
200k
R40
C26
C30 10u
R52
TBD
47n
VOUTA
D19
MMSD4148
U4_VCC
C24 0.1u
R41
10
4.7p
QFB
5.11 MEG
C20
1000u
PSTIMER U4_VCC
C11
QZCD 11
NCP1937
220k
34k
R31
0
VOUTA
U2
PCS/PZCD 16
10 QFB
VCC
RT1
R18
C21
C19
1000u
3 BOX2
5 PCONTROL
2
D15
MBR5H100MFS
R34
90.9k
GND 17
20k
R29
2.2u R19
1 M3
IPP045N10N3
R33
453k
10k
C7
C13
C14 330p
MMSZ5254
D14
TBD
R32
267
C23
0.47u
1k
R1
C12 100n
VAUX
33p
D13
MMSD103T1
C6
1.62 MEG
C32
R50
10k
J2
U1
PFBHV 20
NCP4304
10
11
500u
D18
MMSD103T1
CS 5
8
9
2
D8
R15
1 HVX2
TRIG/DIS
100p
1k
2
1
2
M2
D2
IPA65R380C
6
1
MRA4007
R2
MIN_TONCOMP 6
118k
0.5
0.5
20
R3B R3C
0.5
MIN_TOFF GND 7
R3A
0.5
MMSD4148
R3
1
MRA4007
D7
S2M
R17
R6
VCC
10k
8.06k
6
3
R42
100k
C22
U5
DRV 8
(Aux)
R10
D6
MMSD4148
C25
TK12A60U
C31
TBD
D5
R11
GBU406
R5
8.06k
R43
100k
8.25
1000p
6800p
1u 0.22u
R45
100k
100k
C5
82u
1
R4
3 ~B
R44
C3
M1
47.5
CY2
C2
C1
0.22u 0.22u
4 TX1
MUR550
MMSD4148
CX2
0.1u
RT2
15
21
8
9
4
R7
2
L2
1
L4
R8
L1
11
12
300u
D16
2 ~A
4.75
S10K300
CY1
1000p
CX1
0.1u
MOV1
3A
3
10
L3
F1
J1
VBULK
D4
20
MMSD103T1
1
1N5406
1
D12
MMSZ5236
MIN_TOFF
R49
20
D3
MIN_TOFF
35.7k
D17
R51
R26
R27
1 MEG
2k
R9
1 1
1
2
20
MMSD4148
C28 100u
Custom
2 2
CY3
1
2
D11
MMSD4148
1000p
HS1
1 1
Custom
2 2
3 3
Value
Footprint
Manufacturer
Part Number
D1, D2
1000 V, 1 A
SMD, SMA
MRA4007T3G
D3
600 V, 3 A
DO201AA
1N5406G
D4
520 V, 5 A
DO201AA
MUR550APFG
Diode, Switching
100 V, 200 mA
SMD, SOD123
MMSD4148T1G
Diode, Switching
250 V, 100 mA
SMD, SOD123
MMSD103T1G
D14
Diode, Zener
27 V, 500 mW
SMD, SOD123
MMSZ5254BT1G
D15
Diode, Schottky
100 V, 5 A
SMD, SO8FL
MBR5H100MFST1G
D17
Diode, Zener
7.5 V, 500 mW
SMD, SOD123
MMSZ5236BT1G
U1
SMD, SOIC20NB
NCP1937A1
U4
SOIC8
NCP4355B
U5
SOIC8
NCP4304A
Designator
www.onsemi.com
65
SMPSRM
NOTE: Components labeled FB are only populated for the flyback version and components labeled BB are only required
for the Buck-boost configuration
Figure 49. 10 W Passive PFC Flyback and BuckBoost Dimmable LED Driver
Manufacturer Part
Number
Designator
Description
Value
Dout
SMA2
MURA220T3
D9
6TSSOP (5Lead)
BAS21DW5T1G
Qfet
600 V
NDD02N60Z
U1
NCL30083BDMR2G
www.onsemi.com
66
SMPSRM
Additional Documentation
Table 15. Design Notes
Document Title
Document ID
DN05062/D
NCP1011: Efficient, Low Cost, Low Standby Power (<100 mW), 2.5 W CCCV Charger
DN06017/D
DN06002/D
DN06013/D
DN06027/D
DN06065/D
DN06005/D
DN06020/D
NCP1014: 12 Watt Mini Boost Power Factor Corrector for LED applications
DN06064/D
DN06052/D
DN06009/D
DN06011/D
DN06003/D
NCP1014: Improving the Power Factor of Isolated Flyback Converters for Residential ENERGY STAR
LED Luminaire Power Supplies
DN06051/D
DN06037/D
DN06066/D
DN06034/D
DN06006/D
DN06012/D
DN06021/D
NCP1028: Single Stage, Offline, Isolated 12 V, 800 mA Converter with High Power Factor
DN06069/D
DN05037/D
DN06023/D
DN06028/D
DN06053/D
DN05058/D
DN05036/D
DN05055/D
DN05038/D
DN05018/D
DN05049/D
DN05059/D
DN05061/D
DN05053/D
DN05043/D
DN05054/D
DN06049/D
DN06050/D
NCP1217: 18 to 24 V, 85 W, Offline PSU with Short Term, High Surge Current Capability
DN06038/D
DN06010/D
DN06024/D
DN05014/D
DN06074/D
DN05029/D
www.onsemi.com
67
SMPSRM
Table 15. Design Notes
Document Title
Document ID
DN05033/D
DN05012/D
DN05028/D
DN05032/D
NCP1251: Low Power, UltraWide AC Input Range, Electric Meter Power Supply
DN05017/D
DN05039/D
DN06058/D
DN06029/D
DN06008/D
DN06014/D
NCP1615: High Efficiency, High Voltage, Active X2, <30mW no load PFC
DN05057/D
DN05001/D
DN05044/D
Document ID
Revision
Revision Date
Thermal Runaway
TND327/D
Feb, 2007
TND325/D
Sep, 2007
TND328/D
Sep, 2007
TND324/D
Sep, 2007
SMPS Overview
TND342/D
Jun, 2008
SMPS Topologies
TND343/D
Jun, 2008
TND355/D
Oct, 2008
TND356/D
Oct, 2008
TND352/D
Oct, 2008
TND351/D
Oct, 2008
TND344/D
Oct, 2008
TND348/D
Oct, 2008
TND349/D
Oct, 2008
TND347/D
Oct, 2008
TND376/D
Nov, 2009
TND377/D
Nov, 2009
TND383/D
Nov, 2009
TND378/D
Nov, 2009
TND381/D
Nov, 2009
TND379/D
Nov, 2009
TND353/D
Nov, 2009
TND345/D
Nov, 2009
TND350/D
Nov, 2009
TND357/D
Nov, 2009
TND382/D
Nov, 2009
Electromagnetic Compatibility
TND389/D
Dec, 2009
TND396/D
Dec, 2009
www.onsemi.com
68
SMPSRM
Table 17. Application Notes
Document Title
Document ID
AND8106/D
AND8242/D
AND8373/D
AND8324/D
AND8185/D
AND8454/D
AND8393/D
5 Key Steps to Design a Compact, HighEfficiency PFC Stage using the NCP1611
AND9062/D
5 Key Steps to Design a Compact, HighEfficiency PFC State Using the NCP1612
AND9065/D
AND8099/D
700 mA LED Power Supply Using Monolithic Controller and OffLine Current Boosted (Tapped Inductor) Buck Converter
AND8328/D
AND8262/D
AND8209/D
AND8124/D
AND8486/D
AND8246/D
AND8129/D
AND8244/D
A 48 V/ 2 A High Efficiency, Single Stage, Isolated Power Factor Corrected Power Supply for LED Drivers and Telecom Power
AND8394/D
AND8241/D
AND8142/D
AND8468/D
AND8076/D
A 75 W TV Power Supply Operating in Quasisquare Wave Resonant Mode Using NCP1207 Controller
AND8145/D
A 90 W/19V High Efficiency, Notebook Adapter Power Supply with Inherent Power Factor Correction
AND8397/D
AND8112/D
A Simple 12 Vout, 22 W, Offline Forward Converter Using ON Semiconductors NCP1027/1028 Monolithic Switcher
AND8489/D
AND8255/D
AND8078/D
AND9057/D
An Innovative Approach to Achieving Single Stage PFC and StepDown Conversion for Distributive Systems
AND8147/D
An OffLine, Power Factor Corrected, BuckBoost Converter for Low Power LED Applications
AND9043/D
Application Note for a 5.0 W to 6.5 W Power Over Ethernet (PoE) DCDC Converter
AND8247/D
AND8332/D
AND8355/D
Circuit Design and PCB Layout Guidelines for Designs Using the NCP108x
AND9133/D
AND9066/D
AND8321/D
AND8032/D
AND8273/D
AND8461/D
Design of an Isolated 2 W Bias Supply for Telecom Systems Using the NCP1030
AND8119/D
AND8134/D
Designing NCP1337
AND8266/D
AND8240/D
AND8354/D
AND8431/D
AND8089/D
AND8125/D
Four Key Steps to Design a Continuous Conduction Mode PFC Stage Using the NCP1653
AND8184/D
Four Key Steps to Design a Continuous Conduction Mode PFC Stage Using the NCP1654
AND8322/D
www.onsemi.com
69
SMPSRM
Table 17. Application Notes
Document Title
Document ID
AND8456/D
AND8303/D
TND307/D
AND8252/D
AND8333/D
AND8205/D
AND8042/D
Implementing Cost Effective & Robust Power Factor Correction with NCP1607
AND8353/D
Implementing Cost Effective and Robust Power Factor Correction w/ the NCP1606
AND8282/D
AND8127/D
AND8396/D
AND8272/D
Implementing a 12 V /240 W Power Supply with the NCP4303B, NCP1605 and NCP1397B
AND8460/D
AND8474/D
AND8161/D
AND8257/D
AND8293/D
AND8344/D
AND8023/D
AND8038/D
Implementing the NCP1605 to Drive the PFC Stage of a 19 V/8 A Power Supply
AND8281/D
AND8296/D
AND8407/D
AND8453/D
AND8128/D
AND8098/D
AND8224/D
AND8154/D
AND8478/D
AND9115/D
AND8260/D
AND9077/D
AND8084/D
AND8190/D
AND8191/D
AND8225/D
AND8226/D
AND8318/D
Offline Converter Provides 5.0 Volt, 1.0 Amp Output for Small Electronic Equipment
AND8019/D
AND8136/D
AND8256/D
AND8132/D
AND8123/D
AND8029/D
AND9064/D
AND9079/D
AND8203/D
Simple Secondary Side Vcc Source for Low Power CVCC Power Supplies
AND8395/D
Small, Simple, PWM Buck Controller Can Replace High Current LDOs
AND8170/D
AND8327/D
AND8187/D
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70
SMPSRM
Table 17. Application Notes
Document Title
Document ID
AND8279/D
AND8469/D
AND8488/D
AND8069/D
AND8334/D
AND8311/D
AND8117/D
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ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/
patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters
which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers
technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended
to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer
shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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SMPSRM/D