2SJ160, 2SJ161, 2SJ162

Silicon P-Channel MOS FET

ADE-208-1182 (Z)
1st. Edition
Mar. 2001
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162
2
Outline
D
G
S
1
2
3
TO-3P
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage 2SJ160 V
DSX
120 V
2SJ161 140
2SJ162 160
Gate to source voltage V
GSS
15 V
Drain current I
D
7 A
Body to drain diode reverse drain current I
DR
7 A
Channel dissipation Pch*
1
100 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Note: 1. Value at T
C
= 25C
2SJ160, 2SJ161, 2SJ162
3
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ160 V
(BR)DSX
120 V I
D
= 10 mA , V
GS
= 10 V
breakdown voltage 2SJ161 140 V
2SJ162 160 V
Gate to source breakdown
voltage
V
(BR)GSS
15 V I
G
= 100 A, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
0.15 1.45 V I
D
= 100 mA, V
DS
= 10 V
Drain to source saturation
voltage
V
DS(sat)
12 V I
D
= 7 A, V
GD
= 0*
1
Forward transfer admittance |y
fs
| 0.7 1.0 1.4 S I
D
= 3 A, V
DS
= 10 V*
1
Input capacitance Ciss 900 pF V
GS
= 5 V, V
DS
= 10V,
Output capacitance Coss 400 pF f = 1 MHz
Reverse transfer capacitance Crss 40 pF
Turn-on time t
on
230 ns V
DD
= 20 V, I
D
= 4 A
Turn-off time t
off
110 ns
Note: 1. Pulse test
2SJ160, 2SJ161, 2SJ162
4
150
100
50
0 50 100 150
Case Temperature T
C
(C)
Power vs. Temperature Derating
C
h
a
n
n
e
l

D
i
s
s
i
p
a
t
i
o
n


P
c
h


(
W
)
20
5
1.0
0.2
20 100 500
Drain to Source Voltage V
DS
(V)
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
A
)
Maximum Safe Operation Area
10
0.5
5 10 50 200
Ta = 25C
D
C

O
p
e
r
a
t
i
o
n

(
T
C
=

2
5

C
)
P
W

=

1
0
0

m
s

(
1

S
h
o
t
)
P
W

=

1
0

m
s

(
1

S
h
o
t
)
I
D
max (Continuous)
(14.3 V,
7 A)
(140 V, 0.71 A)
(160 V, 0.63 A)
2SJ160
2SJ161
2SJ162
(120 V, 0.83 A)
2
10
20 50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
2
10 30 40
T
C
= 25C
0
4
6
2
V
GS
= 0
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
A
)
1 V
3
4

9
P
c
h
=
1
0
0
W
1.0
0.8 2.0
Gate to Source Voltage V
GS
(V)
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
A
)
Typical Transfer Characteristics
0.8
0.2
0.4 1.2 1.6 0
0.4
0.6
V
DS
= 10 V
7
5
T
C

=

2
5

C
2
5
2SJ160, 2SJ161, 2SJ162
5
10
0.5 10
Drain Current I
D
(A)
D
r
a
i
n

t
o

S
o
u
r
c
e

S
a
t
u
r
a
t
i
o
n

V
o
l
t
a
g
e


V
D
S

(
s
a
t
)


(
V
)
5
0.5
0.2 1.0 2
0.1
1.0
2
Drain to Source Saturation Voltage
vs. Drain Current
V
GD
= 0
0.2
0.1 5
75
25
T
C

=

2
5

C
10
4 10
Gate to Source Voltage V
GS
(V)
D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e


V
D
S


(
V
)
8
4
2 6 8
0
6
Drain to Source Voltage vs.
Gate to Source Voltage
I
D
= 1 A
2
2
5
1,000
4 10
Gate to Source Voltage V
GS
(V)
I
n
p
u
t

C
a
p
a
c
i
t
a
n
c
e


C
i
s
s


(
p
F
)
500
2 6 8
100
Input Capacitance vs.
Gate to Source Voltage
V
DS
= 10 V
f = 1 MHz
200
0
3.0
30 k
Frequency f (Hz)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

y
f
s

(
S
)
1.0
10 k
0.3
Forward Transfer Admittance
vs. Frequency
0.1
0.03
0.01
0.003
100 k 300 k 1 M 3 M 10 M
T
C
= 25C
V
DS
= 10 V
I
D
= 2 A
2SJ160, 2SJ161, 2SJ162
6
500
0.5 10
Drain Current I
D
(A)
S
w
i
t
c
h
i
n
g

T
i
m
e


t
o
n
,

t
o
f
f


(
n
s
)
200
20
0.2 1.0 2
5
100
0.1
10
Switching Time vs. Drain Current
t
off
50
5
t
on
Switching Time Test Circuit
Input
PW = 50 s
duty ratio
= 1%
50
20 V
Output
R
L
Waveforms
Output
t
on
10%
90%
10%
90%
Input
t
off
2SJ160, 2SJ161, 2SJ162
7
Package Dimensions
3.2 0.2
4.8 0.2
1.5
0
.
3
2.8
0.6 0.2 1.0 0.2
1
8
.
0

0
.
5
1
9
.
9

0
.
2
15.6 0.3
0
.
5
1
.
0
5
.
0

0
.
3
1.6
1.4 Max 2.0
2
.
0
1
4
.
9

0
.
2
3.6 0.9
1.0
5.45 0.5 5.45 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-3P

Conforms
5.0 g
As of January, 2001
Unit: mm
2SJ160, 2SJ161, 2SJ162
8
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