1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
P-Channel 30-V (D-S) MOSFET
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
Notes
a. Surface Mounted on 1 x 1 FR4 Board.
b. Pulse width limited by maximum junction temperature
V
DS
(V) r
DS(on)
m() I
D
(A)
13 @ V
GS
= -10V -11.5
19 @ V
GS
= -4.5V -9.3
PRODUCT SUMMARY
-30
Symbol Maximum Units
V
DS
-30
V
GS
25
T
A
=25
o
C -11.5
T
A
=70
o
C -9.3
I
DM 50
I
S -2.1
A
T
A
=25
o
C 3.1
T
A
=70
o
C 2.3
T
J
, T
stg
-55 to 150
o
C
Power Dissipation
a
P
D
Operating Junction and Storage Temperature Range
W
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
I
D
A
Symbol Maximum Units
Maximum Junction-to-Case
a
t <= 5 sec R
JC
25
o
C/W
Maximum Junction-to-Ambient
a
t <= 5 sec
R
JA 50
o
C/W
THERMAL RESISTANCE RATINGS
Parameter
1
2
3
4 5
6
7
8
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2
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by
customers technical experts. freescaleL does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
Min Typ Max
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= -250 uA -30
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 uA -1
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= 25 V 100 nA
V
DS
= -24 V, V
GS
= 0 V -1
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55
o
C -5
On-State Drain Current
A
I
D(on)
V
DS
= -5 V, V
GS
= -10 V -50 A
V
GS
= -10 V, I
D
= -11.5 A 13
V
GS
= -4.5 V, I
D
= -9.3 A 19.0
Forward Tranconductance
A
g
fs
V
DS
= -15 V, I
D
= -11.5 A 29 S
Diode Forward Voltage V
SD
I
S
= 2.5 A, V
GS
= 0 V -0.8 V
Total Gate Charge Q
g
25
Gate-Source Charge Q
gs
11
Gate-Drain Charge Q
gd
17
Input Capacitance C
iss
2300
Output Capacitance C
oss
600
Reverse Transfer Capacitance C
rss
300
Turn-On Delay Time t
d(on)
15
Rise Time t
r
13
Turn-Off Delay Time t
d(off)
100
Fall-Time t
f
54
m
Unit
V
DD
= -15 V, R
L
= 6 , ID
= -1 A, VGEN = -10 V
nS
V
DS
= -15 V, V
GS
= -5 V,
I
D
= -11.5 A
nC
Dynamic
b
V
DS
=-15V, V
GS
=0V, f=1MHz pF
Drain-Source On-Resistance
A
r
DS(on)
SPECIFICATIONS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
uA I
DSS
Zero Gate Voltage Drain Current
Static
V
Test Conditions Symbol Parameter
Limits
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3
Typical Electrical Characteristics (P-Channel)
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 4. On-Resistance with Gate to Source Voltage
Figure 5. Transfer Characteristics
Figure 3. On-Resistance Variation with Temperature
-50
-40
-30
-20
-10
0
-3 -2 -1 0
VDS - Drain to So urce Vo ltage (V)
2.5 V
3 V
3.5 V
4V t hru 10v
-50
-40
-30
-20
-10
0
-5 -4 -3 -2 -1 0
VGS - Gat e to Source Voltage (V)
I

-

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
25C
125C
-55C
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD - Source to Drain Current (V)
I
S

-

S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
TJ = 150C
TJ = 25C
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
0
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10
VGS- Gate to Source Voltage (V)
R
D
S
(
O
N
)









ID=11.5a
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (C)
V
GS
=10V
I
D
=11.5A
N
o
r
m
a
l
i
z
e
d

r
D
S
(
o
n
)
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4
Typical Electrical Characteristics (P-Channel)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (S)
PDM
t1
t2
1. Duty Cycal D = t1/t2
2. Per Unit Base RJ A =70C/W
3. TJ M - TA = PDM Zjc
4. Sureface Mounted
Single Pulse
0.5
0.2
0.1
0.05
0.02
Figure 11. Transient Thermal Response Curve
0
1000
2000
3000
4000
-20 -15 -10 -5 0
V
DS
(V)
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
CISS
COSS CRSS
Figure 8. Capacitance Characteristics
0
5
10
15
20
25
30
35
40
45
50
0.01 0.1 1 10 100 1000
Pulse Time (S)
P
o
w
e
r

(
W
)
-0.4
-0.2
0
0.2
0.4
0.6
0.8
-50 -25 0 25 50 75 100 125 150
TJ - Juncation Temperature (C)
V

V
a
r
i
a
n
c
e

(
V
)
Figure 7. Gate Charge Characteristics
0
2
4
6
8
10
0 10 20 30 40 50
Q
GS
, Tot al Gat e Charge (nC)
V
G
S

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
V
DS
= 10V
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5
Package Information
SO-8: 8LEAD
H x 45
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