QUESTION BANK

UNIT I

YEAR : 2013-2017
SEM : III SEM

NAME OF THE FACULTY: S.JAYACHITRA
SUBJECT : ELECTRONICS DEVICES AND CIRCUITS
SUBJECT CODE : EC6202 BRANCH: EEE (A&B) DATE: 08.07.2014
PART -A
1.What is meant by diffusion current in a semi conductor? AP/MAY 2010, AP/MAY 2011,
Nov/Dec. 2009
2.Define diffusion capacitance and transition capacitance.
3.Write the temperature dependence of reverse saturation current of PN junction diode.
4. A silicon diode has a saturation current of 7.5 A at room temperature 300K.Calculate the
saturation current at 400K. AP/MAY 2010, AP/MAY 2011
5.Define Knee voltage of a diode. NOV/DEC 2010
6. What is peak inverse voltage? NOV/DEC 2010.
7.What are the applications of LED. AP/MAY 2010.
8.What is PN junction diode. How is it formed. AP/MAY 2012.
9.What is LED? Draw its symbol. AP/MAY 2012., AP/MAY 2013
10.What is LED? Which material is used for LED? (NOV/DEC 2009)
11.Define diffusion capacitance and transition capacitance.
12.Write the temperature dependence of reverse saturation current of PN junction diode.
13.What is meant by depletion region?
14.What are the advantages of bridge rectifier over center tapped counterpart?
15.Why Si is preferred over Ge in the manufacture of semiconductor devices?
16. Define biasing?
17.What is the static resistance and dynamic resistance of a diode? NOV/DEC 2011)
18.What is the effect of junction temperature on cut-in voltage of a PN diode?
19.Differentiate between breakdown voltage and PIV of a PN diode.
20.Differentiate avalanche and zener breakdowns. NOV/DEC 2011)
21.List the PN diode parameters.
22.List some applications of zener diode.
23.State the principle of operation of an LED.
24.Define Zener diode.
25.Compare between halfwave and fullwave rectifiers.
26. Explain briefly about laser diode.
27. define static and dynamic resistance of PN junction diode. AP/MAY 2013



PART -B
1. With a neat diagram explain the working of a PN junction diode in forward bias and reverse
bias and show the effect of temperature on its V-I characteristics. (16) AP/MAY 2010, AP/MAY
2011, Nov/Dec. 2009, Nov/Dec. 2012.

2. Explain V-I characteristics of Zener diode. AP/MAY 2010
3. Draw the circuit diagram and explain the working of full wave bridge rectifier and derive the
expression for average output current and rectification efficiency. (8) AP/MAY 2010, AP/MAY
2011
4. Explain the operation of FWR with centre tap transformer. Also
derive the following for this transformer. (6)
(ii) dc output voltage (4)
(iii) dc output current (2)
(iv) RMS output voltage , TUF and PIV NOV/DEC 2010, Nov/Dec. 2009, NOV/DEC 2011,
4. Explain the operation of HWR with centre tap transformer. Also
derive the following for this transformer. (6)
(ii) dc output voltage (4)
(iii) dc output current (2)
(iv) RMS output voltage , TUF and PIV AP/MAY 2012

5.Define full wave rectifier. Derive an expression for a ripple factor in fullwave rectifier.
NOV/DEC 2009.

6. Zener diode shunt regulator. (8) NOV/DEC 2010, Nov/Dec. 2009, AP/MAY 2013

7. Explain the working of Bridge rectifier. Give the expressions for RMS current, PIV, ripple
factor and efficiency.

8.Discuss the working principle, characteristics and applications of LED in detail. Nov/Dec.
2009, NOV/DEC 2011.

9.Explain the drift and diffusion current for a semiconductor. AP/MAY 2012, AP/MAY 2013

10.Discuss the working principle, characteristics and applications of LED in detail.

11. Explain the effect of temperature of a diode. AP/MAY 2013.