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Phase Controlled Circuits
(MEPE 102)
LABORATORY MANUAL
V SEMESTER B.E. (Electrical & Electronics)
(Academic year 2013 -2014 )
Student Name
Roll. Number
Batch No.
Department of Electrical and Electronics Engineering
JAWAHARLAL INSTITUDE OF TECNOLOGY, BORAWAN
(Rajiv Gandhi Proudyogiki Vishwavidyalaya University, Bhopal)
Jawaharlal Institute of Technology
(Experiment List)
Doc. Type Experiment
List
Faculty Name: -
Subject Name (Code): - Power electronics Devices & Circuits (EX-504)
Session: - Jul-Dec 2012 Batch:- 2010-2014
Branch: - Electrical & Electronics Year- I Semester:-I
Exp.
No.
Experiment list Grade Date Signature
1 VI CHARACTERISTICS OF SCR.
2 VI CHARACTERISTICS OF DIAC.
3 VI CHARACTERISTICS OF BJT.
4 CHARACTERISTICS OF TRIAC.
5 VI CHARACTERISTICS & TRANSFER CHARACTERISTICS OF MOSFET.
6 OUTPUT CHARACTERISTICS & TRANSFER CHARACTERISTICS OF IGBT.
7 SINGLE PHASE SCR HALF CONTROLLED CONVERTER WITH R LOAD.
8 1 SCR FULLY CONTROLLED CONVERTER WITH R-LOAD.
9 STUDY OF 3 SCR HALF CONTROLLED CONVERTER.
10 STUDY OF 3 SCR FULLY CONTROLLED CONVERTER.
11 STUDY OF CLASSES OF COMMUTATION A,B,C,D,E,F.
Signature of External Signature of Internal
Name . Name ..
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.1
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Phase Controlled Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 1
AIM:-
To study V-I characteristics of S.C.R. and determine the Break over Voltage, Holding current &
Latching current.
EQUIPMENT REQUIRED:-
Setup board, Connecting Wires, Digital Multimeter
THEORY:-
Thyristor (generally known as SCR) is a four layer, three junction, PNPN semiconductor switching
device. It has three terminals, anode cathode and gate. Basically, a Thyristor consists of four layers of
alternate p-type and n-type silicon semiconductors forming three junctions j
1
, j
2
and j
3
. A gate terminal is
usually kept near the cathode terminal. The terminal connected to outer p region is called anode (A), the
terminated connected to outer n region is called cathode and that connected to inner p region is called the
gate (G). The symbol of SCR is shown in figure.
Fig - 1(a) Fig-1(b) Fig-1(c)
Fig -1(d) V-I Characteristic
A circuit diagram for obtaining static V-I characteristics of a Thyristor is shown in fig.
Fig-1(e)
Fig-1(f)
The anode and cathode are connected to main source through the load. The gate and cathode are fed from
a source Vs which gives positive gate current from gate to cathode. Fig. shown static V-I characteristics
of Thyristor .Va is the anode voltage across Thyristor terminals A, K and Ia is the anode current. Fig
reveals that a Thyristor has three basic modes of operation, namely, reverse blocking mode, forward
blocking mode (off-state) and forward conduction mode (on-state) .These three modes of operation are
now discussed below.
(a). When cathode is made positive with respect to anode with gate open, Thyristor is reverse biased.
Junction j
1
,j
3
are reverse biased whereas junction j
2
is forward biased .
The device behaves like two diodes connected in series with reverse voltage appearing across them. A
small leakage current of the order of a few milliampeares or few microamperes flows depending upon the
SCR rating. This is reverse blocking mode, called reverse breakdown voltage V
br
, an avalanche occurs at
j1 and j3 and the reverse current increases rapidly. A large current associated with V
bb
gives rise to more
losses in the Thyristor. This may lead to Thyristor damage as the junction temperature may exceed its
permissible temperature rise . It should, therefore, be ensured that maximum working reverse voltage
across a SCR does not exceed V
br
.
(b). Forward blocking mode: When anode is positive with respect to the cathode with gate circuit open,
SCR is said to be forward biased. During this mode, junction j1, j3 are forward biased but junction j
2
is
reversed biased. In this mode, a small current, called forward leakage current, flows.
In case the forward voltage is increased, then the reverse biased junction j
2
will have an avalanche
breakdown at a voltage called forward break over voltage V
bo
.
When forward voltage is less than V
bo
, Thyristor offers high impedance. Therefore, a SCR can be treated
as an open switch even in the forward blocking mode.
(C). Forward conduction mode: In this mode, SCR conducts currents from anode to cathode with a very
small voltage drop across it. A SCR is brought from forward blocking mode to forward conduction mode
by turning it on by exceeding the forward break over voltage or by applying a gate4 pulse between gate
and cathode. In this mode, SCR is on state and behaves like a closed switch. Voltage drop across
Thyristor in the on state is of the order of 1 to 2 volt depending on the rating of Thyristor . This voltage
drop increases slightly with UN-Increase in anode current. In conduction mode anode current is limited
by load impedance alone as voltage drop across Thyristor quite small. This small voltage drop V
t
across
the device is due holmic drop in four layers.
SPECIFIC TERMINOLOGY:-
Break over Current (I
bo
) - Principal current at break over point
Break over Voltage (V
bo
) - Principal voltage at the break over point
Gate Trigger current (I
gt
) - Minimum gate current required to maintain the SCR in the on State.
Holding Current (I
h
) - Minimum principal current required to maintain SCR in the on state.
Latching Current (I
L
) - Minimum principal current required to maintain SCR in the on state
Immediately after the switching from off state to on state has occurred and the triggering
Signal has been removed
ON- State Voltage (V
t
) - Principal voltage when the SCR is in on state
Gate trigger Voltage (V
GT
) - Gate voltage required to produce the gate trigger current
ON-State Current (I
T
) - Principal current when the SCR is in the on state
PROCEDURE:-
1) Connection as made as per the circuit diagram.
2) Connect multimeter across the Thyristor (anode- cathode), across the supply terminal V
sto
measure
gate voltage V
g
, V
a
and V
s
(all in DC mode). An ammeter of the mA range is connected to measure the
load current IL.
3) Keep initially the gate potential V
g
at very low value. Vary the supply voltage Vs in steps and note
whether ammeter shows any reading. For every step of V
s
note the ammeter. Also note corresponding
readings of Va respectively.
4) If ammeter doesnt indicate any reading, increase the gate potential V
g
to some higher value and
follow the step no. (3).
5) Further increase the gate potential to some higher values and repeat the procedure followed in step
no(3).
6) Tabulate the reading in the observation column.
7).Finally a graph is drawn between anode current (I
a
=I
L
= Load current) and the device voltage V
s
respectively.
OBSERVATION TABLE:-
For Ig1 =.. = constant.
S.n. Anode to Cathode voltage
(V
ak
)volt
Anode current (I
a
)amp.
For I
g
2 =.. = constant.
S.No Anode to Cathode voltage
(V
ak
)volt
Anode current (I
a
)amp.
GRAPH-
PANAL DIAGRAM-
RESULT-
Thus the V-I characteristics of SCR and the Break over Voltage, Holding current & Latching
current have been determined.
QUESTIONS-
1. Define Holding current, Latching current, Breakdown voltage.?
2. What is meant by leakage current.?
3. Mention the applications of SCR?
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.2
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Phase Controlled Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 2
AIM:-
To study V-I characteristics of Diac with both A.C. & D.C. input voltages.
EQUIPMENT REQUIRED:-
Setup board, Connecting Wires, Digital Multi meter
INTRODUCTION:-
It is two terminal three layer semiconductor device as shown in FIG.1 (a). It is a bidirectional
diode i.e. it can be made to conduct in either direction. It has no gate terminal. FIG. 1(b) shown circuit
symbol. Switching from off state to on state may be done by simply exceeding the avalanche breakdown
voltage in either direction. The two p-regions have similar doping characteristics resulting in symmetrical
switching characteristics for both positive and negative voltages. Applied voltage of either polarity results
in a small saturation. Current across reveres biased pn junction when the applied voltage is exceed the
avalanche break down voltage ., The Diac current rises sharply as shown in FIG.2 .In this on condition
,the voltage across the Diac decreases with .Increasing current and the device therefore, offers negative
differential resistance. Diac is mainly used a trigger device power control systems.
Fig.2(a) Junction diagram of daic Fig.2 (b). Symbol of Diac
Fig.2(c) V.I characterstics of Diac
Fig.2(d) AC phase control Fig.2(e) Output Waveform
HARDWARE SPECIFICATIONS:-
1. Diac characteristics circuit arrangement.
2. Variable D.C. power supply 0 +35V & 500mA provided on board
3. A.C. source 36 v 50 Hz provide on board.
4. User manual set of patch cord stackable(4) & non stackable (2)
EXPERIMENTAL PROCEDURE:-
Switch on the experimental board by connecting the power card to the ac mains.
1. Connect the circuit as shown in fig .2(a) .
2. By vairing the input voltage, not down the reading of out put voltmeter and current
meter.(make sure that potentiometer is in minimum position)
3. Draw a graph between voltage v and current i .(it is shown in fig.2(b)
4. Reverse the Diac and connect the input voltage and repeat the steps 2, 3&4.
5. Also observe the waveforms by giving A.C. voltage provided on the board as shown in fig.3 (a)
and observe the wave form as shown in fig.3(b)
OBSERVATION TABLE:-
S.N. VOLTAGE
(DIAC)
CURRENT(OUT)
GRAPH:-
RESULT:-
QUESTION:-
1. What is DIAC & explain with its relative diagram ?
2. Draw the VI characterstics of DIAC?
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.3
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Phase Controlled Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 3
AIM :-
To study V-I characteristics of BJT
EQUIPMENT REQUIRED:-
Setup Board, Ammeter, Volt Meter, Connecting cords.
THEORY:-
Transistors are known as a three terminals semiconductor devices. There are two main types:
bipolar junction transistors (BJT) and Field-effect transistors (FET). The BJT is made of either
germanium or silicon. Each of these materials is "doped" to give the n-type (in which electrons are the
majority carriers) and p-type ( holes are the majority carriers). The BJT device is made as follows: a thin
region of n-type material is sandwiched between two regions of p-type material to make a pnp transistor.
The same method is used to make a npn transistor. The boundaries between the n and p regions in a BJT
are called junctions and the corresponding user terminal names for the npn regions are the Collector, the
Base, and the Emitter. BJTs are current controlled devices. In silicon BJT, the forward bias on the base-
emitter junction must exceed 0.7 V to activate the device and to allow the majority carriers (current) to
flow across the junction with little resistance. In germanium transistors the forward bias must exceed 0.3
V. Fig.3(a) shows the BJT symbol for npn and pnp-type. The second type of the three terminal
semiconductor devices is the field-effect transistors FET. Metal-Oxide semiconductor Field-Effect
Transistor (MOSFET) is the most popular kind of the field-effect transistors. It is characterized as a
voltage controlled device. The source and drain of a MOSFET are formed by diffusing impurities into a
substrate of one type (n-type or p-type) to make regions of opposite type. The gate consists of a layer of
aluminum evaporated on to a very thin layer of silicon dioxide, which insulates it from the substrate. The
main advantages of the MOSFET over the BJT are: easy to manufacture, small size, high input
impedance, and less power consumption.
MSOFET is considered the basic building cell in most of the VLSI applications, such as, digital
logic, memories, microprocessors, microcontrollers, buffer amplifiers, and analog switches. However the
BJT maintains its position in the applications that require high power and high frequencies. Fig.3(b)
shows the MOSFET symbol for N-channel, and P-channel MOSFET transistors (depletion type).
Fig. 3.(a)
Fig. 3(b)
The DC bias, and circuits configurations are the two main issues that concern the first time circuit
designer. The DC bias establishes the static operating point for the device, while the decision of using a
certain configuration depends mainly on the type of application for example, a current source or voltage
amplifier with high input impedance. In the following sections you will practice a simple approach to
establish the operating point of the BJT by looking at the V-I characteristics or maximum rating of the
device used in the design. Also you will explore the different types of transistor circuit configurations and
amplifier classes.
a) DC Bias and Operating Point
The DC bias is used to establish a starting point in the V-I characteristic of any active device
such as BJTs and MOSFETs. The bias is made possible by using DC power source, and a number of
resistive elements. Therefore, the simple electronic circuit will be consisting of the three terminal device
surrounded by a resistive circuit and all attached to a single or double DC power supply. The location of
the operating point in a BJT ( Q) depends on the following values
C
I ,
CE
V ,
B
I , and can be written as
f Q (
C
I ,
CE
V ,
B
I ). The temperature variation will cause a change in the DC current gain , and in the
collector reverse saturation current
CO
I . Consequently this thermal drift will increment the current
C
I
and change the location of the operating point. If the thermal drift continues, the device could be driven
into the saturation region without applying any input signal. A number of biasing schemes have been used
in designing BJT circuits to avoid such instability. The self-bias CE with single power supply is shown in
fig. 3(b). The resistor
E
R is used to stabilize the bias by providing a DC negative feedback in the input
circuit. Adding a bypass capacitor
E
C across
E
R can eliminate the effect of
E
R at signal frequencies.
One quick choice of
1
R , and
2
R can be achieved using the ratio 1/3 for example if you choose k R 12
1
,
then k R 4
2
, and all related values can be computed. The operating point location can be chosen the
same way for example if you want to locate the Q point at the middle of the V-I characteristics simply
choose
2
CC
CE
V
V , and
) ( * 2 2
E C
CC saturation C
C
R R
V I
I
..(2)
at t = , the source voltage becomes zero hence the load current is also reduced to zero and SCR turns
off. The turn off process is assisted by the reversal of source voltage. Turn off or commutation of SCR is
achieved naturally by reversal of source /line voltage is called natural or line commutation.
The mean out put voltage cane be evaluated as follows:
(3)
Effect of load inductance
The natural effect of inductance is to delay the change in current at t = .the load current for resistive
load is given by
..(4)
When the load inductance is present the load current does not build up to his value but increase slowly .at
t = ,the current rise to fall to zero but the energy stored in the load inductance develops an EMF
E=
Such that when added to source voltage ,causes the SCR to be forward biased. Thus SCR keeps on
conducting beyond t = up to t = + at t = +SCR current reduce zero and SCR turned off . the
source remains contend to load from to +. this results in negative voltage appearing across load .the
associated wave forms and circuit are shown as follows:
Figure. Single phase half wave controlled rectifier with RL load
The mean load voltage can now be obtained as:
Thus for the same firing angle the output voltage V
ac
for inductive load is less than the same for
resistive load. the calculation of is not straight forward ,as it involves the solution of transcendental
equation. This equation is given as follows:
i = Vm/Z +
Z = R2 +
2
L
2
By substituting I =0, t = can be obtained.
PROCEDURE: for R load
1. connect the setup board as shown in the figure1.
2. Adjust Rt for delay angle of 30.
3. Measure Vs.
4. Measure V
dc
with a multimeter.
5. Observe and trace source voltage, SCR current, SCR voltage, load voltage and load current wave
forms.
6. Repeat step 2 to 5 for different delay angles record the observation in table.
OBSERVATION TABLE:-
S.No. Delay Angle
Mean output voltage V
dc
Remarks
Measured Calculated
For RL Load
1. Connect the setup as shown in figure 2.
2. Adjust the resistance Rt for a delay angle of 30 degree.
3. Measure Vs.
4. Measure Vdc with a multimeter.
5. Observe and trace source voltage , SCR voltage, SCR current, load voltage &load current
wave forms.
6. Repeat steps 2 through 4 for different delay angles. Record the observations in the table.
S.No. Delay Angle
Mean output voltage V
dc
Remarks
Measured Calculated
PROCEDURE
1. Calculate V
dc
for measured vaues of V
m
,and for each of the thee configurations.
2. Comment on wave forms obtained.
3. Sketch the supply primary current for each configurations neglecting the transformer
excitation current .
4. Comment on the V
dc
obtained for the same angle for each of the three configurations.
RESULT
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.8
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 8
AIM :-
To Study the single phase full wave controlled rectifier with R loads .
EQUIPMENT REQUIRED:-
Single phase full wave rectifier setup board, patch cords oscilloscope.
THEORY:-
Once of the types of controlled rectifier is fully controlled and semiconductor rectifier. A fully-
controlled circuit contains only thyristers (semiconductor controlled rectifiers (SCR)), whereas a semi-
controlled rectifier circuit is made up of both SCR and diodes as shown in Fig.(1). Due to presence of
diodes, free-wheeling operation takes place without allowing the bridge output voltage to become
negative..
CIRCUIT DIAGRAM:
Fig.8(a) Single-phase fully controlled bridge rectifier
Fig.8(b) Waveforms of a fully controlled bridge rectifier with resistive load.
As shown in Fig. thyristor T1can be fired into the ON state at any time provided that voltage VT
1
> 0. The
firing pulses are delayed by an angle a with respect to the instant where diodes would conduct. Thyristor
T1remains in the ON state until the load current tries to go to a negative value. Thyristor T2is fired into
the ON state when VT
2
> 0, which corresponds in Fig. to the condition at which V
2
> 0. The mean value
of the load voltage with resistive load is given by
Figure 2 presents the behavior of the fully controlled rectifier with resistive-inductive load (with L).
The high-load inductance generates a perfectly filtered current and the rectifier behaves like a current
source. With continuous load current, thyristors T
1
and T
2
remain in the on-state beyond the positive half-
wave of the source voltage V
s
. For this reason, the load voltage v
d
can have a negative instantaneous
value. The firing of thyristors T3and T4has two effects:
a. they turn off thyristors T
1
and T
2
; and
b. After the commutation, they conduct the load current.
This is the main reason why this type of converter is called a naturally commutated or line
commutated rectifier. The supply current iShas the square waveform shown in Fig.(2) for continuous
conduction. In this case, the average load voltage is given by:
PROCEDURE :-
1. Connect the single phase full wave controlled rectifier circuit shown in Fig.8(a) on the power electronic
trainer.
2. Turn on the power
3. Plot the input and output waveforms on the same graph paper.
4. Measure the average and RMS output voltage by connect the AVO meter across load resistance.
5. Turn off the power
6. Add the inductive load on the output as shown in Fig.8(b). With L=10mH measure the output voltage
and plot the output waveform.
7. Repeat step 6 with L=100mH measure the output voltage and plot the output waveforms.
8. Repeat step 6 & 7 with connect the freewheeling diode across the load.
OBSERVATION TABLE:
S.No. Delay Angle
Mean output voltage V
dc
Remarks
Measured Calculated
GRAPH:-
DISCUSSION AND CALCULATIONS :-
1. Compare between the practical and theoretical results for input and output voltages and currents.
2. What does parameters of the single phase full wave controlled rectifiers.
3. Give same application of the single phase controlled rectifiers .
RESULT:-
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.9
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 9
AIM:-
Study of 3 SCR half controlled converter
THEORY:-
Phase controlled AC-DC converters employing thyristor are extensively used for changing
constant ac input voltage to controlled dc output voltage. In phase-controlled rectifiers, a thyristor is tuned
off as AC supply voltage reverse biases it, provided anode current has fallen to level below the holding
current.
Controlled rectifiers have a wide range of applications, from small rectifiers to large high voltage
direct current (HVDC) transmission systems. They are used for electrochemical processes, many kinds of
motor drives, traction equipment, controlled power supplies, and many other applications.
Three- phase half wave controlled rectifier:-
Fig.(1) shows the half-wave rectifier uses three common-cathode thyristor arrangements. In this figure,
the power supply and the transformer are assumed ideal. The thyristor will conduct (ON state), when the
anode-to-cathode voltage V
AK
is positive, and a firing current pulse iGis applied to the gate terminal. To
controls the load voltage delaying the firing pulse by an angle (). As shown in Fig. (a), the firing angle
is measured from the crossing point between the phase supply voltages. At that point, the anode-to-
cathode thyristor voltage V
AK
begins to be positive.
CIRCUIT DIGRAM:-
Fig.9(a): Three-phase half-wave rectifier
With the help of Fig. the load average voltage can be evaluated and is given by
Where V
max
is the secondary phase-to-neutral peak voltage, its root mean square (rms) value, and
is the angular frequency of the main power supply. rmsNfV
Fig.9 (b):Instantaneous ds voltaghVD, average dc voltage VD,and firing angle
PROCEDURE:-
1. Connect the three-phase half wave controlled rectifier circuit shown in Fig.(1) on the power
electronic trainer.
2. Turn on the power.
3. By use oscilloscope, plot the input and output waveforms on the same graph paper" same axis".
4. Measure the average and RMS output voltage by connect the AVO meter across load resistance.
5. Turn off the power
6. Use an inductive load. With L=10mH measure the output voltage and plot the output waveform.
7. Repeat step 6 with L=100mH measure the output voltage and plot the output waveforms.
8. Repeat step 6 & 7 with connect the freewheeling diode across the load.
DISCUSSION AND CALCULATIONS :
1. Compare between the practical and theoretical results for input and output voltages and currents.
2. Design a high voltage power supply for CO2laser, when the optical output power is 8watt. The
current and voltage electronically highly stabilized DC power unit has a nominal output 50mA and
5kV. Pumping under optimal conditions (maximum laser output), a current of 18mA at 3.0 kV is
observed.
3. Design three-phase half wave controlled rectifier.
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.10
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 10
AIM:-
Study of 3 fully controlled converter
THEORY:-
Phase controlled AC-DC converters employing thyristor are extensively used for changing
constant ac input voltage to controlled dc output voltage. In phase-controlled rectifiers, a thyristor is tuned
off as AC supply voltage reverse biases it, provided anode current has fallen to level below the holding
current. Fig. shows the three-phase bridge rectifier. The configuration does not need any special
transformer, and works as a 6-pulse rectifier. The series characteristic of this rectifier produces a dc
voltage twice the value of the half-wave rectifier .
CIRCUIT DIGRAM:-
Fig.10 (a) Three-phase full-wave rectifier
The load average voltage is given by:-
Fig.10 (b) output wave form
PROCEDURE:-
1. Connect the three-phase full wave controlled rectifier circuit shown in Fig.on the power
2. Turn on the power.
3. By use oscilloscope, plot the input and output waveforms on the same graph paper" same axis".
4. Measure the average and RMS output voltage by connect the AVO meter across load resistance.
5. Turn off the power
6. Use an inductive load. With L=100mH measure the output voltage and plot the output waveform.
7. Repeat step 6 with L=100mH measure the output voltage and plot the output waveforms.
8. Repeat step 6 & 7 with connect the freewheeling diode across the load.
9. Connect the three-phase bridge half-control rectifier circuit shown in Fig.
10. Repeat steps (2-7).
DISCUSSION AND CALCULATIONS:-
1. Compare between the practical and theoretical results for input and output voltages and currents.
2. Design a high voltage power supply for CO2laser, when the optical output power is 12 watt.
3. The current and voltage electronically highly stabilized DC power unit has a nominal Output 70mA
and 6kV. Pumping under optimal conditions (maximum laser output), a current
of 20mA at 4 kV is observed.
4. Compare between the three-phase half-wave controlled rectifier and three-phase full-wave controlled
rectifier.
Jawaharlal Institute of Technology
Laboratory Manual (MEPE 102)
Doc. Type
Experiment No.11
Faculty Name: -
Subject Name (Code): - Power Electronics Devices & Phase Controlled Circuits
Branch: -Electrical & Electronics Year- I Semester:-I
EXPERIMENT NO. 11
AIM
Study of classes of commutation A, B, C, D ,E, F.
EQUIPMENT REQUIRED
Setup Board, Oscilloscope, Ammeter, Volt Meter, Connecting cords,30/2A DC Regulated
Power Supply.
THEORETICAL BACKGROUND
Class A, Self commutated by resonating the load
When the SCR is triggered, anode current flows and charges up C with the dot
as positive. The L-C-R form a second order under-damped circuit. The current through the SCR
builds up and completes a half cycle. The inductor current will then attempt to flow through the SCR
in the reverse direction and the SCR will be turned off.
Fig.11(a) resonant load commutated SCR and the corresponding waveforms.
The capacitor voltage is at its peak when the SCR turns off and the capacitor discharges into the
resistance in an exponential manner. The SCR is reverse-biased till the capacitor voltages returns to
the level of the supply voltage V.
Class B, Self commutated by an L-C circuit:-
The Capacitor C charges up in the dot as positive before a gate pulse is applied to the
SCR. When SCR is triggered, the resulting current has two components.
The constant load current I
load
flows through R - L load. This is ensured by the large reactance
in series with the load and the freewheeling diode clamping it. A sinusoidal current flows through the
resonant L-C circuit to charge-up C with the dot as negative at the end of the half cycle. This current
will then reverse and flow through the SCR in opposition to the load current for a small fraction of
the negative swing till the total current through the SCR becomes zero. The SCR will turn off when
the resonantcircuit (reverse) current is just greater than the load current.
The SCR is turned off if the SCR remains reversed biased for t
q
> t
off
, and the rate of rise of the
reapplied voltage < the rated value.
Fig.11(b) Class B, L-C turn-off
Class C, C or L-C switched by another loadcarrying SCR:-
This configuration has two SCRs. One of them may be the main SCR and the
other auxiliary. Both may be load current carrying main SCRs. The configuration may have four
SCRs with the load across the capacitor, with the integral converter supplied from a current source.
Assume SCR
2
is conducting. C then charges up in the polarity shown. When SCR
1
is triggered, C is
switched across SCR
2
via SCR
1
and the discharge current of C opposes the flow of load current in
SCR
2
.
Fig.11(c) Class C turn-off, SCR switched off by another load-carring SCR
Class D, L-C or C switched by an auxiliary SCR:-
The circuit shown in Figure (Class C) can be converted to Class D if the load current is
carried by only one of the SCRs, the other acting as an auxiliary turn-off SCR. The auxiliary SCR
would have a resistor in its anode lead of say ten times the load resistance.
SCR
A
must be triggered first in order to charge the upper terminal of the capacitor as
positive. As soon as C is charged to the supply voltage, SCR
A
will turn off. If there is substantial
inductance in the input lines, the capacitor may charge to voltages in excess of the supply voltage.
This extra voltage would discharge through the diode-inductor-load circuit.
When SCR
M
is triggered the current flows in two paths: Load current flows through the load and the
commutating current flows through C- SCR
M
-L-D network. The charge on C is reversed and held at
that level by the diode D. When SCR
A
is re-triggered, the voltage across C appears across SCR
M
via
SCR
A
and SCR
M
is turned off. If the load carries a constant current as in Fig. 3.4, the capacitor again
charges linearly to the dot as positive.
Fig.11(d) Class D turn-off. Class D commutation by a C (or LC) switched by an Auxiliary SCR.
Class E External pulse source for commutation:-
The transformer is designed with sufficient iron and air gap so as not to saturate. It is
capable of carrying the load current with a small voltage drop compared with the supply voltage.
When SCR1 is triggered, current flows through the load and pulse transformer. To turn SCR
1
off a
positive pulse is applied to the cathode of the SCR from an external pulse generator via the pulse
transformer. The capacitor C is only charged to about 1 volt and for the duration of the turn-off pulse
it can be considered to have zero impedance. Thus the pulse from the transformer reverses the
voltage across the SCR, and it supplies the reverse recovery current and holds the voltage negative
for the required turn-off time.
Fig.11(e) Class E commutation
Fig.11(f) wave form of Class E commutation
Class F, AC line commutated:-
If the supply is an alternating voltage, load current will flow during the positive half cycle. With a
highly inductive load, the current may remain continuous for some time till the energy trapped in the load
inductance is dissipated.
Fig.11 (g) Class F, natural commutation by supply voltage
During the negative half cycle, therefore, the SCR will turn off when the load current becomes zero
'naturally'. The negative polarity of the voltage appearing across the outgoing SCR turns it off if the
voltage persists for the rated turn-off period of the device. The duration of the half cycle must be
definitely longer than the turn-off time of the SCR.
QUESTIONS:-
1. How to turn ON and turn OFF time of switch decide the maximum switching frequency?
2. How the reverse recovery current of free wheel diodes affects the switch current rating?