O LNG IN

BI TP

CHNG I: O IN P V DNG IN
1.1 Mt ampe-k dng c cu o t in c in tr
c cu o R(m) =99 v dng lm lch ti a Imax
= 0,1mA. in tr shunt Rs = 1. Tnh dng in
tng cng i qua ampe-k trong cc trng hp:
a) kim lch ti a
b) 0,5Dm; (FSD = Imax, full scale deviation)
c) 0,25Dm

Hnh B.1.1
Gii:
a) kim lch ti a Dm:
in p hai u c cu o:
Vm=Im.Rm=0,1mA.99=99mV
IsRs = Vm => Is =

Vm
Rs

Trang 1

9,9mV
1

= 9,9mA

O LNG IN

BI TP

Dng tng cng:

I = Is + I = 9,9 + 0,1 = 10mA
b)0,5Dm:
Im = 0,5 . 1mA = 0,05mA
Vm = Im.Rm = 0,05mA.99 = 4,95mV
Is =

Vm 4.95mV

4.95mA
Rs
1

I = Is + Im = 4.95mA + 0,05mA=5mA
c)0,25mA:
Im = 0,25.0,1mA = 0,025mA
Vm = ImRm = 0,025mA.99 = 2,475mV
Vm
2,475
Io= Rs 1 2,475V
1.2 Mt c cu o t in c I= 100A, in tr ni
khung quay R= 1K. Tnh in tr shunt mc vo
c cu o tr thnh mt ampe-k tng ng vi
hnh 1.1.
a) Dm = 100mA = tm o 1
b) Dm = 1A = tm o 2
Gii:
a) tm o 100mA
Trang 2

O LNG IN

BI TP

Vm= ImRm = 100.1 = 100mV

It = Is+ Im => Is = It Im = 100mA 100A =
9,9mA
Rs =

Vm
100mV

1,001
Is
99,9mA

b) tm o 1A:
Vm = ImRm = 100mV
Is= It Im = 1A- 100A= 999,9mA
Rs=

Vm
100mV

0,10001
Is
999,9mA

1.3
Mt c cu o t in c ba in tr shunt
c mc theo kiu shunt ayrton s dng lm
ampe-k. Ba in tr c tr s R1=0,05,
R2=0,45, R3=4,5, Rm= 1k, Imax= 50A, c
mch o nh hnh sau, tnh cc tr s tm o ca
ampe-k

Trang 3

O LNG IN

BI TP

Hnh B.1.3
Gii:
Ti lch 0,5 Dm
Vs= Imax.Rm= 50A.1k = 50mV
Vs
50

10mA
5
1 R 2 R3

Is= R

It=Is+Im=50A+10mA = 10,05mA; I=10mA.

Kha in C:
Vs= Im(Rm+R3) = 50A.(1k+4,5) = 50mV
Is=

Vs
50mV

100mA
R1 R 2
0,5 4,5

Kha in D:
Trang 4

O LNG IN

BI TP

Vs= Im(Rm +R2 +R3) = 50A(1k + 4,5

+0,45) =50mV
Vs

50mV

Is = R1 0,05 1A.I = 50A+1A=1,00005A =

1A
1.4
Mt c cu o t in Imax =100A,in tr
dy ni (dy qun) Rm = 1K c s dng lm
vn k DC. Tnh in tr tm o vnk c Vtd=
100V. Tnh in p V hai u vn k khi kim c
lch 0,75Dm; 0,75Dm v 0,25Dm ( lch ti a
Dm)

Hnh B.1.4
Gii:
V
V = IM (Rs + Rm) => Rs = I

Trang 5

Rm

O LNG IN

BI TP

Khi V= Vtd=100V => IM = Imax =100A

Rs =

100V
100 A

-1K =999K

Ti lch 0,75 Dm
Im = 0,75.100A = 75A
V= Im(Rs+ Rm) 75A(999k +1k)=75V
Ti lch 0,5 Dm
Im = 50 A
V= 50 A(999 k+1k)=50V
Ti lch 0,25 Dm
V= 25A(999 k+1k)=25V
1.5
Mt c cu o t in c Imax=50 A; Rm
=1700 c s dng lm vn k DC c tm o
10V, 50V, 100V. tnh cc in tr tm o theo hnh
sau:

Trang 6

O LNG IN

BI TP

Hnh B.1.5
Gii
Theo hnh a:
Rm R1
R1

V
I max

V
10V
Rm
1700 198,3k
I max
50 A

50V
1700 998,3k
50 A
100V
R3
1700 1,9983M
50 A
R2

Theo hnh b:
R1

V1
10V
Rm
1700 198,3k
I max
50A

Rm R1 R2

V2
Im

V2
50V
R1 Rm
198,3k 1700 800k
Im ax
50 A
V
V3
Rm R1 R2 R3
R3 3 R2 R1 Rm
I max
Im
R2

100V
800k 198,3k 1700 1M
50A

Trang 7

O LNG IN

BI TP

1.6 Mt vnk c tm o 5V, c mc vo

mch, o in p hai u in tr R2 nh hnh
sau:
a) Tnh in p VR2 khi cha mc Vnk.
b) Tnh VR2 khi mc vn k, c nhy 20k/V.
c) Tnh VR2 khi mc vn k, c nhy 200k/V

Hnh B.1.6
Gii:
a) VR2 khi cha mc Vnk.
VR 2 E

R2
50k
12V
5V
R1 R 2
70k 50k

b)Vi vn k c nhy 20k/V.

Trang 8

O LNG IN

BI TP

Rv=5V.20k/V=100k
Rv//R2=100k//50k=33,3k
VR2=

Rv // R2
33,3k
12V
3,87V
R1 Rv // R2
70k 33,3k

c)Vi vn k c nhy 200k/V

Rv=5V.200k/V=1k
Rv//R2=1M//50k= 47,62k
V R 2 12V

47,62k
70k 47,62k 4,86V

=4,86V

1.7Mt c cu o t in c Ifs= 100A v in

tr73 c cu o Rm =1k c s dng lm
vnk AC c V tm o = 100V. Mch chnh
lu c dng cu s dng diode silicon nh
hnh v, diode c VF(nh) =0,7V
a)
b)

c)

tnh in tr ni tip Rs
Tnh lch ca vnk khi in p a vo
vnk l 75V v 50V (tr hiu dng-RMS).
Tnh nhy ca vn k. Tn hiu o l tn hiu
xoay chiu dng sin.

Trang 9

O LNG IN

BI TP

Hnh B.1.7
Gii:
a) Tnh Rs:
y l mch chnh lu ton k nn ta c quan h:
IP(tr nh)= Itb/0,637
Vm (tr nh)=

2V

C cu o c:

Trang 10

O LNG IN
I Fs I tb 100 A I p

BI TP
100 A
157 A
0,637

tac :
1,414Vtd 2V F
1,414Vtd 2V F

Rs
Rm
Rs Rm
Ip
(1,414.100V ) (2.0,7V )

1k 890,7 k
157 A
b) KhiV 75V
1,414V 2V F
(1,414 75V ) ( 2 0,7V )
I tb 0,637 I m 0,637
0,637
Rs R m
890,7 k 1k
I tb 75A
KhiV 50V
(1,414 50V ) (2 0,7V )
I tb 0,673
50 A
890,7 k 1k
c ) I m 157 A I ( RMS ) 0,707 IP 0,707 157 A 111A
R

100V
900,9k.
111A
900,9k
9,009k / V
100V

nhy=

1.8 Mt c cu o t in c Ifs = 50A; Rm =

1700 kt hp vi mch chnh lu bn k nh
hnh sau. Diod silicon D1 c gi tr dng in
thun If (nh) ti thiu l 100 A. Khi in p
o bng 20% Vtm o , diode c VF = 0,7V, vn k
c Vtm o = 50V.
a) Tnh Rs v RSH
b) Tnh nhy ca Vnk trong hai trng
hp: c D2 v khng c D2

Trang 11

O LNG IN

BI TP

Hnh B.1.8
Gii:
a)Tnh Rs v RSH
y s dng chnh lu bn k nn ta c:
Ip=Itb/(0,5.0,673): tr nh trong trng hp
chnh lu bn k
C cu o c Ifs = Itb = 50 A=> Im= 50
A/(0,5.0,673) = 157 A(tr nh)
Khi V= 20% Vtd, IF(nh) c gi tr 100 A.
Vy khi V= Vtd, IF(nh) c gi tr:

Trang 12

O LNG IN

BI TP

100%
100A 500 A
20%
I m I SH I SH I F I M 500 A 157 A 343A

IF
IF

V p I m Rm 157 A 1700 266,9mV

R SH

Vm
266,9mV

778
I SH
343A

IF

1,414Vtd Vm V F
RS

Rs

1,414Vtd Vm V F
1,414 50V 266,9mV 0,7V

139,5k
IF
500 A

b)Tnh nhy:
C D2 trong bn k dng, dng qua D1
c gi tr nh: IF=500 A
Trong bn k m, dng qua vnk c gi tr
nh:

1,414Vtd
1,414.50V

500 A
Rs
139,5k
I hiudung 0,707.500 A 353,5A( RMR)c
I

50V ( RMR)
141,4k
353,5A( RMR)
141,4k
nhay
2,8k / V
50V
Rtng

Khng c D2:
Trong bn k dng:IF(nh) = 500 A. Trong
bn k m: I = 0

Trong chu k ca tn hiu:

Ihiu dng =0,5I F(nh)
Vi I l dng in mch chnh chy qua Rs trong
bn k dng.
Trang 13

O LNG IN

2
hiudung

2T

BI TP
T 2

( I F sin t ) dt
2

I F2 ( inh )
4

I 0,5.500 A 250A
50V
R
200k
250 A
200k
_ nhay :
4k / V
50V

1.9 Mt ampe k s dng c cu o t in c

cu chnh lu v bin dng nh hnh v. Bit
rng c cu o c Ifs = 1mA v Rm = 1700.
Bit dng c Nth = 500; Ns = 4. Diode
cVF(nh) = 0,7V; Rs=20k. Ampe k lch ti
a khi dng s cp Ip = 250mA. Tnh gi tr RL.

Hnh B.1.9
Trang 14

O LNG IN

BI TP

Gii:
Chnh lu ton k nn ta c:
Itb

1mA

Im(tr nh) 0,637 0,673 1,57mA

in p Em hai u cun th bin dng(tr
nh):
Em = (Rm+Rs) + 2VF = 1,57mA(20k +
1700) + 1,4V= 35,5V

Es(tr hiu dng) = (0,707.35,5V) =

25,1V
Dng lm lch ti a c cu o c tr hiu dng
I:
I = 11,1Itb = 11,1.1mA=11,1mA
Ta c:
I thu I so

N so
4
250mA
2mA
N thu
500

I thu I q I L I L 2mA 11,1mA 0,89mA;

Es
25,1V
RL

28,2k
E L 0,89mA

(vi Iq=Iqua c cu o)

CHNG II: O IN TR
Trang 15

O LNG IN

BI TP

2.1 Cho Eb = 1,5; R1= 15k; Rm =1k; R2 =

1k; Imax = 50A. Xc nh tr s c ca Rx khi
Ib = Imax; Im = Imax; Im =3/4 Imax .
Gii:
Ti Im =Imax = 50A; Vm = Imax Rm = 50A
1k = 50mA.
V
50mV
Do : I R 1k 50A . Nh vy dng in: Ib =
100A.
m

Eb
R

R
#
Vy x 1 I Nu
b

R x R1 R2 // Rm 500

1,5V

# 100A 15k. Rx +15k = 15k; Rx = 0.

Khi Im =1/2 Imax = 25A; Vm = 25mV I2 =
25A.
1,5V
Suy ra Ib = 50A. Vy Rx + R1 # 50A ; Rx #
15k.
Tng t nh cch tnh trn. Im = 3/4 Imax =
37,5A.
Ib = Im + I2 = 37,5A + 37,5A = 75A.
Rx + R1 =

1,5V
75A

= 20k, Rx = 5k.
Trang 16

O LNG IN

BI TP

2.2 Mt ohm-k loi ni tip c mch o (Hinh

di y). Ngun Eb = 1,5V, c cu o c Ifs =
100A. in tr R1 + Rm = 15k.
a)Tnh dng in chy qua c cu o khi Rx = 0.
b)Tnh tr gi Rx cho kim ch thi c lch
bng 1/2 FSD, 1/4 FSD, 3/4 FSD (FSD: lch
ti a thang o.)

Hnh B.2.2
Gii:
a.

Im

Eb
1,5V

100 A
R x R1 Rm 0 15k

(FSD).

b. lch bng 1/2 FSD:

100 A
Im = 2 50A (v c cu o tuyn tnh.)
Trang 17

O LNG IN
R x R1 Rm

BI TP

Eb
E
1,5V
R x b R1 Rm
15k 15k
Im
Im
50A

lch bng 1/4 FSD:

1,5V
100 A
15k 45k
I
25A ; R
25A
4
lch bng 3/4 FSD:
Im = 0,75 100A = 75A;
m

Rx

1,5V
15k 5k.
75A

2.3 Mt ohm-k c mch o nh hnh sau. Bit

Eb =1,5V, R1 = 15k; Rm = 50; R2 = 50; c
cu o c Ifs = 50.
Tnh tr gi Rx khi kim ch th c lch ti a:
(FSD); 1/2 FSD v 3/4 FSD.

Hnh B.2.3
Trang 18

O LNG IN

BI TP

Gii:
Khi kim lch ti a (FSD):
Im = 50A; Vm = Im.Rm = 50A50 =
2,5mV.
I2

Vm 2,5Vm

50 A
R2
50

Dng in mch chnh: Ib = I2 + Im = 50A +

50A = 100A.
R x R1

Eb
1,5V

15k
I b 100 A

Rx = ( Rx + R1) R1 = 15k - 15k = 0

Kim lch 1/2 FSD:
Im = 25A; Vm = 25A 50 = 1,25mV;
I2

1,25mV
25A
50

Ib = 25A + 25A = 50A.

1,5V
R R
30k ; Rx = 30k - 15k =
50 A
x

15k.
Kim lch 3/4 FSD:
Im = 0,75 50A = 37,5A; Vm =
37,5A50 = 1,875mV.
I 2

1,875mV
37,5A
50

; Ib

= 37,5A +37,5A = 75A.

R x R1

1,5V
20k R x 20k 15k 5k
75A

Trang 19

O LNG IN

BI TP

2.4 Mt ohm-k co mch o nhiu hnh bai 3. c

ngun.Eb giam xung ch cn 1,3V. Tnh tr gi mi
ca R2 ?.?li cc gi tr Rx tng ng vi lch ca
kim: 1/2 FSD, 3/4 FSD.
Gii:
Eb

1,3V

Rx = 0; I R R 0 15k 86,67 A
Im = 50A (FSD); I2 = Ib Im = 86,67A 50A
= 36,67A.
Vm = ImRm = 50A 50 = 2,5mV;
b

R2

Vm
2,5mV

68,18
I2
36,67 A

Khi kim lch 1/2 FSD:

Im = 25A; Vm = 25A 50 = 12,5mV
I2

Vm 1,25mV

18,33A
R2
68,1

Ib=Im + I2 = 25A + 18,3A =43,33A

R2 R1

Vm
1,3V

30k R x 30k 15k 15k

Ib
43,33A

Khi kim lch 3/4 FSD:

Im = 0,75 50A = 37,5A; Vm = 37,5A
50 = 1,875mV.
I2

1,875mV
27,5A;
68,18

Ib =37,5A + 27,5A = 65A.

R x R1

Vm
1,3V

20k R x 20k 15k 5k

Ib
65A

Trang 20

O LNG IN

BI TP

2.4 Tnh dng in chy qua c cu o v

lch ca kim ch th ca ohm-k c mch d
nh hnh v khi ta s dung tm o R1 trong
hai trng hp:
a)Rx = 0
b) Rx = 24

Hnh B.2.5
Gii:

Trang 21

O LNG IN

BI TP

Mch tng ng ca ohm- k khi ta s

dng tm o R1 trong hai truwowg\ngf hp Rx =
0 v Rx = 24 nh sau:
1,5V
Rx = 0; I 14 10 // 9,99k 2,875k 3,82k
b

Ib

1,5V
62,516mA
14 10 // 16,685k

Dng Im chy qua c cu o:

I m 62,516mA

10
10 16,685k

Im = 37,5A = Ifs: Khi kim lch ti a.

Rx = 24:
Ib

1,5V
31,254mA
24 1410 // 16,685k

I m 31,254mA

10
18,72A :
10 16,685k

kim

lch 1/2 FSD.

2.5 Tnh dng in chy qua c cu o v
lch ca kim ch th ca ohm-k c mch nh
bi 5, khi s dng tm o R100 va R10k
trong trng hp Rx = 0.

Trang 22

O LNG IN

BI TP

Hnh B.2.6
Gii:
Mch tng ng ca Ohm-k khi ta s
dng tm o R100 v R = 0.

Ib

1,5V
1470 1k // 9k 2,875k 3,82k
1,5V

622,38A
236k 1k // 15,695k

I m 62238A

1k
37,5A I fs
1k 6,695k

: kim ch th

lch ti a.
Mch tng ng ca ohm-k khi ta s
dungj tm o R10k v Rx = 0.

Trang 23

O LNG IN
Ib

BI TP

15V
236k 10k // 2,875k 3,82k

15V
62,5A
236k 10k // 6,695k

I m 62,5A

10k
37,5k I fs
10k 6,695k

: Kim ch th lch

ti a.
2.6 Ta o in tr bng cch dng phng php
V v A c mc r di. Ampe-k ch
0,5A,vn k ch 500V.Ampe k c Ra =
10,10k/V. Tnh gi tr R.

Hnh B.2.7
Gii:
E + EA = 500V; I = 0,5A
Trang 24

O LNG IN
Rx R

BI TP

E E A 500V

1000
I
0,5 A

R = 1000 - Ra = 1000 - 10 =990.

2.7 Cc ampe-k, vn k v in tr R bi 2.7
c mc r ngn. Hy tnh ch ca vn k
v ampe-k (ngun cung cp vn l 500V).

Hnh B.2.8
Gii:
Ni tr ca vn k :
Rv = 1000V 10k/V =10M
Rv // R = 10M // 990 = 989,9

Trang 25

O LNG IN

BI TP

ch ca vn k :
E

500V Rv // R 5000V 989,9

495V
Ra Rv R
10 989,9

ch ca ampe k: I I

E
495V

0,5 A
Rv // R 989,9

CHNG III:
O IN DUNG, IN CM V H CM
3.1.Cho cu o nh hnh v , bit C1 =0.1F v t
s R3/R4 c th chnh c thay i trong khong
: 100/1 v 1/100 . Hy tnh CX m cu c th o
c.

Trang 26

O LNG IN

BI TP

Hnh B.3.1
Gii:
Ta c: Cx = C1R3/R4 . Vi : R3/R4 =100/1
=>CX = 0,1F(100/1) =10F
Vi : R3/R4 =1/100 => 0,1F(1/100) =0,001F
Vy cu c tm o : t 0,001F 10F
3.2. Cho cu in dung nh hnh sau, thnh phn mu
C1 =0,1F ;R3 =10k. Bit rng cu cn bng khi
ngun cung cp co f = 100Hz; R1 =125 v R4 =
14,7 . Hy tnh gi tr Rs , CS v h s tn hao D ca
t?
Trang 27

O LNG IN

BI TP

Hnh B.3.2
Gii:
Ta c : Cs =C1R3/R4;
CS =

0,1F 10k
14,7 k

RS =

R1 R 4
R3

= 0.068F ;

125 14,7 k
10k

=183.3

D = CSRS = 2 . 100Hz 0,068F 183,8 = 0,008

3.3. Cho cu in dung nh hnh sau, thnh phn mu
C1 =0,1F ;R3 =10k. Bit rng cu cn bng khi
ngun cung cp co f = 100Hz; R1 =125 v R4 =
14,7 . Hy tnh gi tr Rs , CS v h s tn hao D ca
t?
Trang 28

O LNG IN

BI TP

Hnh B.3.3
Gii:
Ta c : Cs =C1R3/R4;
CS =

0,1F 10k
14,7 k

RS =

R1 R 4
R3

= 0.068F ;

125 14,7 k
10k

=183.3

D = CSRS = 2 . 100Hz 0,068F 183,8 = 0,008

3.4.Cu Maxwell o in cm dng thnh phn mu
C3 = 0,1F, ngun cung cp c tn s f=100Hz. Cu
Trang 29

O LNG IN

BI TP

cn bng khi R1 =1,26k; R3= 470 v R4 =500

.Tnh tr gi in cm LS, in tr RS v h s phm
cht Q ca cun dy.

Hnh B.3.4
Gii:
Ta c :LS =C3R1R4 =0,1F 1,26k 500 63mH
RS =
Q=

R1 R 4 1,26k 500

1.,34k
R3
470

LS 2 100 Hz 63mH

0,03
RS
1,34k

Trang 30

O LNG IN

BI TP

3.5. Cu c ngun cung cp f= 100Hz cn bng khi

C3 =0,1F, R1 =1,26k , R3 =75 v R4 =500. Tnh
in cm LP ,in tr RP v h s phm cht Q ca
cun dy?

Hnh B.3.5
Gii:
L

C 3 R1 R 4

Q=

0,1F 1,26k 500 63mH

R1 R 4 1,26k 500

8,4k
R3
75
RP
8,4k

212
L P 2 100 Hz 63mH

Trang 31

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BI TP

3.6. Hy tnh thnh phn tng ng LS,RS ca cun

dy c :LP =63Mh ; RP = 8,4k ( f =100Hz).
Gii:
R P X P2

RS = X

2
P

2
P

;th: RP = 8,4k ; R

2
P

7,056 10 7

;X

LP

=>XP =2 100Hz 63mH =39,6

X =1,57 10 ; X
2
P

2
P

R P2

=7,056 107

RS =

8,4k 1,57 10 3
0,187
7,056 10 7

XS =

7,056 10 7 39,6

7,056 10 7

LS =

XS

39,6

39,6

= 2 100 Hz = 63mH

3.7. Hy tnh thnh phn tng ng CP ,RP ca t

i n c RS =183,8 v CS =0,068f (f=100Hz).
Gii:
Ta c: RP =( RS2 +XS2 )/RS ; RS2 = (183,8)2 =33,782
10 3

XS =1/2fCS = 1/(2.100Hz.0,68F) =23,405.103

X =5,478.108
2
S

Trang 32

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BI TP

RP =( 33,78.103 +5,478 10 ) / 183 2,99M

8

XP =

R S2 X S2 33,78 10 3 5,478 10 8

XS
23,405 10 3

=23,41.103

CP = 1/(2.100Hz.23,41k)= 0,068F

Trang 33