You are on page 1of 27

1

1
Introduction to
Semiconductor Fabrication Process
Yao-J oe Yang
2
Why I have to introduce semiconductor
manufacturing process ?
The most important industry in Taiwan
Both IC and LCD use similar
manufacturing concepts
ME play the most important role in the
field (process, equipment, automation,
QC)
The core of the hi-tech in the world
The core of the recent technology
revolution in human history
2
3
Integrated Circuits
4
ANALOGADXL-50 ARCHITECTURE
~5 mm
The cover picture of
MicorelectronicCircuit
by Sedraand Smith
Accelerometer
A classic example of
integration of MEMS
and electronic circuit
3
5
NovaSensor Accelerometer
6
MIT/AT&T Micro Motor (Circa 1989)
4
7
Optical Switch
8
Micro-robot
5
9
Packaged tactile array: (a) close-up of polyimide
sensor array inserted into connector and (b) overview
of tactile sensor, connector and PCB patterned to
interface with card-edge connector.
10
Crystal Growth
Yao-J oe Yang
6
11
Crystal Pulling: CZ method
Graphite Crucible
Single Crystal
silicon Ingot
Single Crystal Silicon Seed
Quartz Crucible
Heating Coils
1415 C
Molten Silicon
12
CZ Crystal Pulling
Source: http://www.fullman.com/semiconductors/_crystalgrowing.html
7
13
CZ Silicon Ingots
<100> <111>
14
Czochralski Growth Equipnment
8
15
Overview of Wafer Fabrication
Yao-J oe Yang
16
Basic Wafer Fabrication Operations
Layering
form thin layer/film structures
oxidation, CVD, sputtering, evaporation, epitaxy..
Patterning (patter transfer)
trim layer/film to desired device size
lithography, etching .
Dopingskip
adjust layer/film/substrate electrical properties
ion implementation, diffusion
Heat treatment skip
partially recover the damage after certain processes
diffusion process, annealing .
9
17
Layering
Adding (uniform) thin layers to wafer surfaces
Methods
Growing:
oxidation (grow silicon oxide: SiO
2
)
nitridation(grow silicon nitride: Si
3
N
4
)
Deposition
Epitaxy
chemical vapor deposition
physical vapor deposition
18
Layering
In terms of final shapes, there are three types of
layering processes:
Conformal
Planar
Stack (not traditional IC process)
10
19
Conformal
original original
20
Planar
original original
11
21
Stack
(not traditional IC process)
original original
22
Patterning
A series of steps that remove unwanted
patterns from substrate surface layers
Patterns are defined by photo-masks ( )
Also known as: Photomasking, masking,
lithography, photo-lithography, -lithography
12
23
Etching
Layer 1
Layer 2
Layer 1
Layer 2
Photo-mask
Example:
Layer 1 is etched by an etchant
Pattern is defined by photo-mask (etching mask is not shown)
24
FSG
Metal 4 Copper
Passivation1, USG
Passivation2, nitride
Lead-tin
alloy bump
FSG
Copper Metal 2
FSG
FSG
Copper Metal 3
FSG
P-epi
P-wafer
N-well
P-well
n
+
STI p
+
p
+
USG n
+
PSG
Tungsten
FSG
Cu Cu
Tantalum
barrier layer
Nitride etch
stop layer
Nitride
seal layer
M 1
Tungsten local
Interconnection
Tungsten plug
PMD nitride
barrier layer
T/TiNbarrier &
adhesion layer
Tantalum
barrier layer
CMOS Chip
with 4 Metal
Layers
13
25
CMOS IC
p-Si USG n-Si
BalkSi
Polysilicon
STI
n
+
Source/Drain p
+
Source/Drain
Gate Oxide
26
Overview of Patterning
Yao-J oe Yang
14
27
Patterning
Patterns transferred from photo-masks to
thin-films on a planar substrate via
lithographic process
Example
Step 1:
Transfer patterns of photo-masks ((|) to
photoresist (()) by lithography techniques
Step 2:
Use etchants((`) to etch unwanted portion
of material defined by etching-masks.
28
Pattern Transfer:
Example 1
Spin-coating PR
Photo-lithography
alignment and exposure
Development
Etching
Striping remaining PR
15
29
Example 2:
Starting Material
P-Well
USG
STI
Polysilicon
30
Example 2:
Spin-coating PR
P-Well
USG
STI
Polysilicon
Photoresist (())
16
31
Example 2:
Photo-Mask Alignment (using an aligner)
P-Well
USG
STI
Polysilicon
Photoresist
Photomask((|)
32
Example 2:
Gate Mask Exposure
Gate Mask
P-Well
USG
STI
Polysilicon
Photoresist
17
33
Example 2:
Development
P-Well
USG
STI
Polysilicon
PR
34
Example 2:
Etch Polysilicon (not finished yet)
P-Well
USG
STI
PR PR
Polysilicon
18
35
Example 2:
Final Shape of Etched Polysilicon
P-Well
USG
STI
Gate Oxide
Polysilicon
PR
36
Example 2:
Strip Photoresist
P-Well
USG
STI
Gate Oxide
Polysilicon
19
37
Summary of a typical patterning procedure
Spin coating photoresist (PR) on a wafer
Mask alignment with the wafer using an
aligner (`(|])
Exposure of PR
Development (remove unwanted PR)
With the remained PR as etching masks, etch the
wafer
Striping the remaining PR from the wafer
Patterning
38
Lithography
Yao-J oe Yang
20
39
Optical
X-ray (skipped)
electron beam writer (skipped)
non-traditional, no masks
Types of lithography systems
40
Optical Lithography
Photo-masks ((|)
Interface between designers and devices
Designers layout design (mask) on computers (2D patterns)
opaque patterns (chromium) on transparent glass (fused
silica)
21
41
Photomasks( )
42
Photoresist
Photoresist (PR, ())
Optical resists:
photosensitive polymers
PR is coated on the whole
substrate surface using spin-
coater
Positive PR:
can be removed by KOH or
NaOH solution if it is exposed
most popular for IC process
Negative PR:
can be removed by specific
solution if it is not exposed
not good for feature size <3 um
22
43
Aligners
Alignment and exposure systems
(|`(])
A microscopic system which:
Align the photo-mask and the substrate
Expose PR
Also called:
printers
44
Classification of aligners by exposure methods
Contact printer (]')
High resolution ( 1m)
Mask deterioration
Proximity printer (|')
10 - 25 m gap -->longer mask life
Diffraction effect -->2 - 4 m resolution
Projection printer (')
Image of mask usually reduced
Scanning or stepping of small field (~1cm)
VLSI standard (0.25 m possible with deep-
UV source)
23
45
Schematics of Exposure systems
46
Contact Printer
Light Source
Lenses
Mask
Photoresist
Wafer
24
47
Proximity Printer
Light Source
Lenses
Mask
Photoresist
Wafer
~10 m
48
Light Source
Lens
Mask
Photoresist
Wafer
Scanning Projection System
Synchronized
mask and wafer
movement
(stepper)
Slit
Lens
25
49
Lithography
Karl Suss Contact Aligner stepper
50
Light sources (`((|)
Visible light
Ultraviolet (UV)
Deep ultraviolet (DUV)
Extreme ultraviolet (EUV)
26
51
Coating of Photoresists
Spinning coating
Final thickness of photoresist is a function of rotating speed.
Relationship has been calibrated and formed a look up table
Thickness
1

52
Photoresist Spin Coating
Spindle
To vacuum
pump
PR dispenser
nozzle
Chuck
PR suck back
Wafer
27
53
Photoresist Spin Coating
Spindle
To vacuum
pump
PR dispenser
nozzle
Chuck
PR suck back
Wafer
54
Coater ( )
Spin coater

You might also like