BPV22F

Vishay Telefunken

Silicon PIN Photodiode

Description
BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,spectrally matched to GaAs or GaAs/GaAlAs IR emitters
(l p = 950 nm).
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80%.

Features
D
D
D
D
D
D

94 8633

Large radiant sensitive area (A=7.5 mm2)

Wide viewing angle = 60
Improved sensitivity
Fast response times
Plastic package with IR filter
Filter designed for 950 nm transmission

Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU... or
TSI...Series).

Absolute Maximum Ratings

Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient

Document Number 81508

Rev. 2, 20-May-99

Test Conditions
Tamb

x 25 C

x5s

Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA

Value
60
215
100
55...+100
55...+100
260
350

Unit
V
mW
C
C
C
C
K/W

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Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Reverse Light Current
Temp. Coefficient of Ira
Absolute Spectral Sensitivity
y

Test Conditions
IF = 50 mA
IR = 100 mA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 12 V, f = 1 MHz
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Ee = 1 mW/cm2,
l = 950 nm, VR = 10 V
VR = 5 V, l = 870 nm
VR = 5 V, l = 950 nm

Symbol
VF
V(BR)
Iro
CD
RS
Vo
TKVo
Ik
Ira
TKIra

Min

Typ
1

Max
1.3

2
70
400
370
2.6
75
80

30

60

55

Unit
V
V
nA
pF

mV
mV/K
mA
mA

0.1

%/K

NEP
D*

0.35
0.6
60
950
870...1050
90
4 x 1014
6x1012

s(l)
s(l)

Rise Time

l = 820 nm

VR = 10 V, RL = 1k W,

tr

100

A/W
A/W
deg
nm
nm
%
W/ Hz
cmHz/
W
ns

Fall Time

l = 820 nm

VR = 10 V, RL = 1k W,

tf

100

ns

CutOff Frequency

l = 870 nm

VR = 12 V, RL = 1k W,

fc

MHz

l = 950 nm

VR = 12 V, RL = 1k W,

fc

MHz

Angle of Half Sensitivity

Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l = 950 nm
Noise Equivalent Power
VR = 10 V, l = 950 nm
Detectivity
VR = 10 V, l = 950 nm

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Document Number 81508

Rev. 2, 20-May-99

BPV22F
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
100
Ira Reverse Light Current ( m A )

I ro Reverse Dark Current ( nA )

1000

100

10

VR=10V
1
20

40

60

0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
0.1

10

100

VR Reverse Voltage ( V )

94 8412

Figure 4. Reverse Light Current vs. Reverse Voltage

80
CD Diode Capacitance ( pF )

1.4

I ra rel Relative Reverse Light Current

0.2 mW/cm2

10

100

80

Tamb Ambient Temperature ( C )

Figure 1. Reverse Dark Current vs. Ambient Temperature

VR=5V
l=950nm

1.2

1.0

0.8

0.6

E=0
f=1MHz
60

40

20

0
0

20

40

60

80

100

Tamb Ambient Temperature ( C )

94 8409

100

10
VR=5V
l=950nm

0.1
0.01

0.1
Ee Irradiance (

mW / cm2

Figure 3. Reverse Light Current vs. Irradiance

Document Number 81508

Rev. 2, 20-May-99

100

10

1.2
1.0
0.8
0.6
0.4
0.2
0
750

10

VR Reverse Voltage ( V )

Figure 5. Diode Capacitance vs. Reverse Voltage

S ( l ) rel Relative Spectral Sensitivity

1000

0.1
94 8407

Figure 2. Relative Reverse Light Current vs.

Ambient Temperature

Ira Reverse Light Current ( m A )

0.5 mW/cm2

l=950nm

94 8403

94 8411

1 mW/cm2

94 8408

850

950

1050

1150

l Wavelength ( nm )

Figure 6. Relative Spectral Sensitivity vs. Wavelength

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S rel Relative Sensitivity

10

20

30

40
1.0
0.9

50

0.8

60
70

0.7

80
0.6

0.4

0.2

0.2

0.4

0.6

94 8413

Figure 7. Relative Radiant Sensitivity vs.

Angular Displacement

Dimensions in mm
95 11475

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Document Number 81508

Rev. 2, 20-May-99

BPV22F
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 81508

Rev. 2, 20-May-99

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