Professional Documents
Culture Documents
SMPSRM/D
Rev. 3A, July2002
SCILLC, 2006
Previous Edition 2002
All Rights Reserved
SMPSRM
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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SMPSRM
Forward
Every new electronic product, except those that are battery powered, requires converting offline
115 Vac or 230 Vac power to some dc voltage for powering the electronics. The availability of design
and application information and highly integrated semiconductor control ICs for switching power
supplies allows the designer to complete this portion of the system design quickly and easily.
Whether you are an experienced power supply designer, designing your first switching power
supply or responsible for a make or buy decision for power supplies, the variety of information
in the SWITCHMODE Power Supplies Reference Manual and Design Guide should prove
useful.
ON Semiconductor has been a key supplier of semiconductor products for switching power supplies
since we introduced bipolar power transistors and rectifiers designed specifically for switching
power supplies in the mid70s. We identified these as SWITCHMODE products. A switching
power supply designed using ON Semiconductor components can rightfully be called a
SWITCHMODE power supply or SMPS.
This brochure contains useful background information on switching power supplies for those who
want to have more meaningful discussions and are not necessarily experts on power supplies. It also
provides real SMPS examples, and identifies several application notes and additional design
resources available from ON Semiconductor, as well as helpful books available from various
publishers and useful web sites for those who are experts and want to increase their expertise. An
extensive list and brief description of analog ICs, power transistors, rectifiers and other discrete
components available from ON Semiconductor for designing a SMPS are also provided. This
includes our newest GreenLine, Easy Switcher and very high voltage ICs (VHVICs), as well as
high efficiency HDTMOS and HVTMOS power FETs, and a wide choice of discrete products
in surface mount packages.
For the latest updates and additional information on analog and discrete products for power supply and
power management applications, please visit our website: (www.onsemi.com).
MEGAHERTZ, POWERTAP, SENSEFET, SWITCHMODE, and TMOS are trademarks of Semiconductor Components Industries,
LLC. HDTMOS and HVTMOS are registered trademarks of Semiconductor Components Industries, LLC.
GreenLine, SMARTMOS and Motorola are trademarks of Motorola Inc.
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SMPSRM
Table of Contents
Page
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Linear versus Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Switching Power Supply Fundamentals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The ForwardMode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
The FlybackMode Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Common Switching Power Supply Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Interleaved Multiphase Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Selecting the Method of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
The Choice of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Bipolar Power Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
The Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Driving MOSFETs in Switching Power Supply Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
The Insulated Gate Bipolar Transistor (IGBT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
The Magnetic Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Laying Out the Printed Circuit Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Losses and Stresses in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Techniques to Improve Efficiency in Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
The Synchronous Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Snubbers and Clamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
The Lossless Snubber . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
The Active Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
QuasiResonant Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SMPS Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Integrated Circuits for Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Suggested Components for Specific Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Literature Available from ON Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Notes, Brochures, Device Data Books and Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
References for Switching Power Supply Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Books . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Websites . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
56
56
58
58
59
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SMPSRM
Introduction
(eq. 1)
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SMPSRM
LO
SW
Ion
INDUCTOR CURRENT
(AMPS)
DIODE VOLTAGE
(VOLTS)
Vin
Ioff
Cout
Rload
Vsat
Power
Switch
ON
Power
Switch
OFF
Power
Switch
ON
Power
Switch
OFF
TIME
Vfwd
Ipk
Iload
Imin
Power SW
Diode
Power SW
Diode
TIME
(Vin Vout)
t iinit
L
0 t ton
V t
iL(off) ipk out
L
0 t toff
(eq. 3)
(eq. 2)
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SMPSRM
The FlybackMode Converter
The basic flybackmode converter uses the same
components as the basic forwardmode converter, but in
a different configuration. Consequently, it operates in a
L
D
Cout
Vin
SW
Ion
Ioff
Iload
Rload
SWITCH VOLTAGE
(VOLTS)
Vin
Vflbk
(Vout)
Power
Switch
ON
Vsat
Power
Switch
ON
Diode
ON
Power
Switch
ON
Diode
ON
INDUCTOR CURRENT
(AMPS)
TIME
Ipk
Iload
TIME
t 0on
(eq. 4)
iL(off)
(Vin Vout)
L
(eq. 6)
(eq. 5)
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SMPSRM
to a 50 percent duty cycle. There must be a time period
when the inductor is permitted to empty itself of its
energy.
The boost converter is used for boardlevel (i.e.,
nonisolated) stepup applications and is limited to less
than 100150 watts due to high peak currents. Being a
nonisolated converter, it is limited to input voltages of
less than 42.5 VDC. Replacing the inductor with a
transformer results in a flyback converter, which may be
stepup or stepdown. The transformer also provides
dielectric isolation from input to output.
(eq. 7)
SWITCH VOLTAGE
(VOLTS)
Vflbk
(Vout)
Vin
Power
Switch
ON
Power
Switch
ON
Diode
ON
Diode
ON
INDUCTOR CURRENT
(AMPS)
TIME
Vsat
Ipk
TIME
Common Switching
Power Supply Topologies
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SMPSRM
Cost is a major factor that enters into the topology
decision. There are large overlaps in the performance
boundaries between the topologies. Sometimes the most
costeffective choice is to purposely design one topology
to operate in a region that usually is performed by
another. This, though, may affect the reliability of the
desired topology.
Figure 4 shows where the common topologies are used
for a given level of DC input voltage and required output
power. Figures 5 through 12 show the common
topologies. There are more topologies than shown, such
as the Sepic and the Cuk, but they are not commonly
used.
1000
HalfBridge
100
Flyback
FullBridge
42.5
NonIsolated
10
FullBridge
Very High
Buck
Peak Currents
10
100
1000
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SMPSRM
L
Power Switch
D
Vin
Cin
VFWD
VD
IPK
Vout
+
Cout
Control
IL
Feedback
TIME
Vin
TIME
ILOAD
IMIN
VFLBK
+
+
SW
Control
D
ON
SW ON
Cin
Vin
D
ON
VSAT
VSW
TIME
Vin
Vout
Cout
IPK
IL
ISW
ID
TIME
+
VL
Control
Vin
Vin
TIME
SW
D
Cin
Vout
Vout
Cout
Feedback
IL
ISW
ID
TIME
IPK
VSAT
SW
ON
VSW
TIME
0
+
Vin
N1
Cin
Control
Vin
D
N2
Cout
+
Vout
IPRI
SW
IPK
TIME
ISEC
Feedback
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10
TIME
SMPSRM
+
LO
+
N2
N1
Cout
Cin
Vin
Vout
SW
Control
Feedback
SW
ON
VSW
0
VSAT
TIME
2Vin
IPRI
0
TIME
IMIN
IPK
SW1
D1
LO
+
D2
Cout
SW2
Vin
Cin
Control
Feedback
2Vin
SW2
Vin
VSW
SW1
TIME
0
VSAT
IPK
IPRI
Vout
TIME
IMIN
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SMPSRM
LO
Ds
+
+
Cout
Vout
+
N2
XFMR
SW1
Cin
Control
Vin
N1
SW2
C
C
Feedback
Vin
SW1
V in
2
SW2
VSW2 0
TIME
VSAT
IPK
IPRI
TIME
0
IMIN
+
Cout
+
XFMR
Vin
Vout
N2
SW1
Cin
N1
Control
SW3
XFMR
C
SW4
SW2
Vin
SW
V in
2
1-4
SW
2-3
VSW2 0
TIME
VSAT
IPK
ISW2
0
TIME
IMIN
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SMPSRM
+
+
VIN
CIN
SA1
SA2
VFDBK
Control
LA
GATEA1
GATEA2
+
+
GND
CFA
CFB
COUT
GATEB2
GATEB1
SB1
CS5308
LB
SB2
Current Feedback A
Current Feedback B
Voltage Feedback
Figure 13. Example of a TwoPhase Buck Converter with Voltage and Current Feedback
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VOUT
SMPSRM
CurrentMode
Hysteric Voltage
OC Protection
Response Time
Preferred Topologies
Average OC
Slow
ForwardMode
PulsebyPulse OC
Slow
ForwardMode
Intrinsic
Rapid
BoostMode
Hysteretic
Rapid
Average
Slow
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SMPSRM
VCC
OSC
Charge
Clock Ramp
Verror
Discharge
Ct
Volt
Comp.
VFB
+
+
Pulsewidth
Comparator
Vref
Steering
Average
Overcurrent
Protection
Cur.
Comp.
Iout (lavOC)
or
ISW (PPOC)
Output
Gating
Logic
Verror Amp.
Current Amp.
RCS
PulsebyPulse
Overcurrent
Protection
VOC
VSS
Ct
Discharge
Volt
Comp.
Output
Gating
Logic
S
Verror Amp.
VFB
Verror
Output
Vref
Current
Comparator
+
ISW
Verror
RCS
VSS
Ipk
ISW
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SMPSRM
Power Switches
The choice of which semiconductor technology to use
for the power switch function is influenced by many
factors such as cost, peak voltage and current, frequency
of operation, and heatsinking. Each technology has its
own peculiarities that must be addressed during the
design phase.
There are three major power switch choices: the
bipolar junction transistor (BJT), the power MOSFET,
and the integrated gate bipolar transistor (IGBT). The
BJT was the first power switch to be used in this field and
still offers many cost advantages over the others. It is also
still used for very low cost or in high power switching
converters. The maximum frequency of operation of
bipolar transistors is less than 80100 kHz because of
some of their switching characteristics. The IGBT is used
for high power switching converters, displacing many of
the BJT applications. They too, though, have a slower
switching characteristic which limits their frequency of
operation to below 30 kHz typically although some can
reach 100 kHz. IGBTs have smaller die areas than power
MOSFETs of the same ratings, which typically means a
lower cost. Power MOSFETs are used in the majority of
applications due to their ease of use and their higher
frequency capabilities. Each of the technologies will be
reviewed.
(eq. 8)
VBB
100 pF
Control IC
100 pF
Control IC
VCE
+
VBE
Power Ground
Power Ground
(a) Fixed Base Drive Circuit
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SMPSRM
CDG
Coss
CGS
TURN
ON
t1
VDR
t3
t3
t2
t2
VGS
0
TURNOFF
Vth
t1
Vpl
VDS
0
IG
+
0
Figure 18. Typical MOSFET Drive Waveforms (Top: VGS, Middle: VDG, Bottom: IG)
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SMPSRM
Driving MOSFETs in Switching
Power Supply Applications
There are three things that are very important in the
high frequency driving of MOSFETs: there must be a
totempole driver; the drive voltage source must be well
bypassed; and the drive devices must be able to source
high levels of current in very short periods of time (low
compliance). The optimal drive circuit is shown in
Figure 19.
VG
VG
LOAD
LOAD
Ron
Roff
a. Passive TurnON
VG
b. Passive TurnOFF
VG
LOAD
c. Bipolar Totempole
LOAD
d. MOS Totempole
Figure 19. Bipolar and FETBased Drive Circuits (a. Bipolar Drivers, b. MOSFET Drivers)
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SMPSRM
circuit. Both of the series capacitors must be more than
10 times the value of the Ciss of the MOSFET so that the
capacitive voltage divider that is formed by the series
capacitors does not cause an excessive attenuation. The
circuit can be seen in Figure 20.
VG
RG
1k
C
1:1
C > 10
Ciss
Rectifiers
Rectifiers represent about 60 percent of the losses in
nonsynchronous switching power supplies. Their choice
has a very large effect on the efficiency of the power
supply.
The significant rectifier parameters that affect the
operation of switching power supplies are:
forward voltage drop (Vf), which is the voltage
across the diode when a forward current is flowing
the reverse recovery time (trr), which is how long it
requires a diode to clear the minority charges from
its junction area and turn off when a reverse voltage
is applied
the forward recovery time (tfrr) which is how long it
take a diode to begin to conduct forward current
after a forward voltage is applied.
There are four choices of rectifier technologies:
standard, fast and ultrafast recovery types, and Schottky
barrier types.
A standard recovery diode is only suitable for
5060 Hz rectification due to its slow turnoff
characteristics. These include common families such as
the 1N4000 series diodes. Fastrecovery diodes were
first used in switching power supplies, but their turnoff
time is considered too slow for most modern
applications. They may find application where low cost
is paramount, however. Ultrafast recovery diodes turn
off quickly and have a forward voltage drop of 0.8 to
1.3 V, together with a high reverse voltage capability of
up to 1000 V. A Schottky rectifier turns off very quickly
and has an average forward voltage drop of between 0.35
and 0.8 V, but has a low reverse breakdown voltage and
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SMPSRM
a high reverse leakage current. For a typical switching
power supply application, the best choice is usually a
Schottky rectifier for output voltages less than 12 V, and
an ultrafast recovery diode for all other output voltages.
The major losses within output rectifiers are
conduction losses and switching losses. The conduction
loss is the forward voltage drop times the current flowing
through it during its conduction period. This can be
significant if its voltage drop and current are high. The
switching losses are determined by how fast a diode turns
off (trr) times the reverse voltage across the rectifier. This
can be significant for high output voltages and currents.
Average Vf
Typical Applications
Standard Recovery
0.71.0 V
1,000 ns
5060 Hz Rectification
Fast Recovery
1.01.2 V
150200 ns
Output Rectification
UltraFast Recovery
0.91.4 V
2575 ns
Output Rectification
(Vo > 12 V)
Schottky
0.30.8 V
< 10 ns
Output Rectification
(Vo < 12 V)
Bipolar Pwr Sw
MOSFET Pwr Sw
Rectifier
VCEO
IC
VDSS
ID
VR
IF
Buck
Vin
Iout
Vin
Iout
Vin
Iout
Boost
Vout
(2.0 Pout)
Vin(min)
Vout
(2.0 Pout)
Vin(min)
Vout
Iout
Buck/Boost
Vin Vout
(2.0 Pout)
Vin(min)
Vin Vout
(2.0 Pout)
Vin(min)
Vin Vout
Iout
1.7 Vin(max)
(2.0 Pout)
Vin(min)
1.5 Vin(max)
(2.0 Pout)
Vin(min)
5.0 Vout
Iout
Flyback
1 Transistor
Forward
2.0 Vin
(1.5 Pout)
Vin(min)
2.0 Vin
(1.5 Pout)
Vin(min)
3.0 Vout
Iout
PushPull
2.0 Vin
(1.2 Pout)
Vin(min)
2.0 Vin
(1.2 Pout)
Vin(min)
2.0 Vout
Iout
HalfBridge
Vin
(2.0 Pout)
Vin(min)
Vin
(2.0 Pout)
Vin(min)
2.0 Vout
Iout
FullBridge
Vin
(1.2 Pout)
Vin(min)
Vin
(2.0 Pout)
Vin(min)
2.0 Vout
Iout
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SMPSRM
San Diego, CA
website: http://www.pulseeng.com
Telephone: 8586748100
TDK
CoilCraft, Inc.
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SMPSRM
Within all switching power supplies, there are four
major current loops. Two of the loops conduct the
highlevel AC currents needed by the supply. These are
the power switch AC current loop and the output rectifier
AC current loop. The currents are the typical trapezoidal
current pulses with very high peak currents and very
rapid di/dts. The other two current loops are the input
source and the output load current loops, which carry low
frequency current being supplied from the voltage source
and to the load respectively.
For the power switch AC current loop, current flows
from the input filter capacitor through the inductor or
transformer winding, through the power switch and back
to the negative pin of the input capacitor. Similarly, the
output rectifier current loops current flows from the
inductor or secondary transformer winding, through the
Power Switch
Current Loop
Output Rectifier
Current Loop
Vout
SW
Input Current
Loop
Output Load
Current Loop
+
Vin
VFB
Control
Cin
Cout
Analog
GND C
A
Input Source
Ground
B
Power
Switch Ground
Join
Output Load
Ground
Output Rectifier
Ground
Join
Join
(a) The NonIsolated DC/DC Converter
Output Rectifier
Current Loop
Power Switch
Current Loop
Input Current
Loop
Output Load
Current Loop
Vout
VFB
SW
+
Vin
Cout
Cin
Control
FB
RCS
Analog
GND
C
A
Input Source
Ground
B
Output Rectifier
Ground
Output Load
Ground
Join
Join
Figure 21. The Current Loops and Grounds for the Major Converter Topologies
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SMPSRM
The last important factor in the PCB design is the
layout surrounding the AC voltage nodes. These are the
drain of the power MOSFET (or collector of a BJT) and
the anode of the output rectifier(s). These nodes can
capacitively couple into any trace on different layers of
the PCB that run underneath the AC pad. In surface
mount designs, these nodes also need to be large enough
to provide heatsinking for the power switch or rectifier.
This is at odds with the desire to keep the pad as small as
possible to discourage capacitive coupling to other
traces. One good compromise is to make all layers below
the AC node identical to the AC node and connect them
with many vias (platedthrough holes). This greatly
increases the thermal mass of the pad for improved
heatsinking and locates any surrounding traces off
laterally where the coupling capacitance is much smaller.
An example of this can be seen in Figure 22.
Many times it is necessary to parallel filter capacitors
to reduce the amount of RMS ripple current each
capacitor experiences. Close attention should be paid to
this layout. If the paralleled capacitors are in a line, the
capacitor closest to the source of the ripple current will
operate hotter than the others, shortening its operating
life; the others will not see this level of AC current. To
ensure that they will evenly share the ripple current,
ideally, any paralleled capacitors should be laid out in a
radiallysymmetric manner around the current source,
typically a rectifier or power switch.
The PCB layout, if not done properly, can ruin a good
paper design. It is important to follow these basic
guidelines and monitor the layout every step of the
process.
Power Device
Via
PCB Top
PlatedThru Hole
PCB Bottom
Figure 22. Method for Minimizing AC Capacitive Coupling and Enhancing Heatsinking
www.onsemi.com
23
SMPSRM
SATURATION
VOLTAGE
STORAGE
TIME
CLEARING
RECTIFIERS
IPEAK
SATURATION
CURRENT
TURN-OFF
CURRENT
SATURATION
LOSS
TURN-ON
LOSS
TURN-OFF LOSS
SWITCHING LOSS
IPEAK
CURRENT
TAIL
CURRENT
CROWDING
PERIOD
SECOND
BREAKDOWN
PERIOD
FALL
TIME
CLEARING
RECTIFIERS
TURN-ON
CURRENT
ON VOLTAGE
RISE
TIME
INSTANTANEOUS ENERGY
LOSS (JOULES)
COLLECTOR CURRENT
(AMPS)
FALL
TIME
VPEAK
DRAIN CURRENT
(AMPS)
COLLECTOR-TO-EMITTER
(VOLTS)
VPEAK
RISE
DYNAMIC
TIME SATURATION
INSTANTANEOUS ENERGY
LOSS (JOULES)
DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
TURN-OFF
CURRENT
ON LOSS
TURN-ON
LOSS
TURN-OFF LOSS
SWITCHING LOSS
www.onsemi.com
24
SMPSRM
creates a very large VI product which is as significant as
the conduction losses. Switching losses are also the major
frequency dependent loss within every PWM switching
power supply.
The lossinduced heat generation causes stress within
the power component. This can be minimized by an
effective thermal design. For bipolar power transistors,
however, excessive switching losses can also provide a
lethal stress to the transistor in the form of second
breakdown and current crowding failures. Care should be
taken in the careful analysis of each transistors Forward
BiasedSafe Operating Area (FBSOA) and Reverse
BiasedSafe Operating Area (RBSOA) operation.
DIODE VOLTAGE
(VOLTS)
FORWARD VOLTAGE
REVERSE VOLTAGE
DIODE CURRENT
(AMPS)
IPK
INSTANTANEOUS ENERGY
LOSS (JOULES)
FORWARD
RECOVERY
TIME (Tfr)
REVERSE
RECOVERY
TIME (Trr)
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25
SMPSRM
typical switching power supply.
The synchronous rectifier can be driven either actively,
that is directly controlled from the control IC, or
passively, driven from other signals within the power
circuit. It is very important to provide a nonoverlapping
drive between the power switch(es) and the synchronous
rectifier(s) to prevent any shootthrough currents. This
dead time is usually between 50 to 100 ns. Some typical
circuits can be seen in Figure 26.
+ Vout
SW
Drive
GND
Direct
SR
RG
C
VG
C
1k
1:1
C > 10 Ciss
TransformerIsolated
(a) Actively Driven Synchronous Rectifiers
LO
+ Vout
Primary
www.onsemi.com
26
SMPSRM
Snubbers and Clamps
Snubbers and clamps are used for two very different
purposes. When misapplied, the reliability of the
semiconductors within the power supply is greatly
jeopardized.
A snubber is used to reduce the level of a voltage spike
and decrease the rate of change of a voltage waveform.
This then reduces the amount of overlap of the voltage
and current waveforms during a transition, thus reducing
the switching loss. This has its benefits in the Safe
Operating Area (SOA) of the semiconductors, and it
reduces emissions by lowering the spectral content of any
RFI.
A clamp is used only for reducing the level of a voltage
spike. It has no affect on the dV/dt of the transition.
ZENER
CLAMP
SOFT
CLAMP
SNUBBER
SNUBBER
SOFT
CLAMP
ZENER
CLAMP
Figure 27. Common Methods for Controlling Voltage Spikes and/or RFI
VOLTAGE (VOLTS)
CLAMP
SNUBBER
ORIGINAL
WAVEFORM
t, TIME (sec)
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27
SMPSRM
The Lossless Snubber
A lossless snubber is a snubber whose trapped energy
is recovered by the power circuit. The lossless snubber is
designed to absorb a fixed amount of energy from the
transition of a switched AC voltage node. This energy is
stored in a capacitor whose size dictates how much
energy the snubber can absorb. A typical implementation
of a lossless snubber can be seen in Figure 29.
The design for a lossless snubber varies from topology
to topology and for each desired transition. Some
adaptation may be necessary for each circuit. The
important factors in the design of a lossless snubber are:
1. The snubber must have initial conditions that
allow it to operate during the desired transition
and at the desired voltages. Lossless snubbers
should be emptied of their energy prior to the
desired transition. The voltage to which it is
reset dictates where the snubber will begin to
operate. So if the snubber is reset to the input
voltage, then it will act as a lossless clamp which
will remove any spikes above the input voltage.
Unsnubbed VSW
+
VSW
Snubbed VSW
ID
Figure 29. Lossless Snubber for a One Transistor Forward or Flyback Converter
www.onsemi.com
28
SMPSRM
The Active Clamp
An active clamp is a gated MOSFET circuit that allows
the controller IC to activate a clamp or a snubber circuit
at a particular moment in a switching power supplys
cycle of operation. An active clamp for a flyback
converter is shown in Figure 30.
In Figure 30, the active clamp is reset (or emptied of its
Unclamped
Switch Voltage
(VSW)
Clamped Switch
Voltage (VSW)
Vin
Switch
Current (ISW)
+
ICL
VDR
ISW
VSW
GND
Drive
Voltage (VDR)
Discharge
Charge
Clamp
Current (ICL)
Figure 30. An Active Clamp Used in a One Transistor Forward or a Flyback Converter
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29
SMPSRM
QuasiResonant Topologies
A quasiresonant topology is designed to reduce or
eliminate the frequencydependent switching losses
within the power switches and rectifiers. Switching
losses account for about 40% of the total loss within a
PWM power supply and are proportional to the switching
frequency. Eliminating these losses allows the designer
to increase the operating frequency of the switching
power supply and so use smaller inductors and
capacitors, reducing size and weight. In addition, RFI
levels are reduced due to the controlled rate of change of
current or voltage.
The downside to quasiresonant designs is that they
are more complex than nonresonant topologies due to
parasitic RF effects that must be considered when
ILR
LR
CR
VSW
Vin
Cin
LO
D
Cout
CONTROL
Vout
FEEDBACK
V SW
SWITCH
TURN-OFF
Vin
POWER SWITCH
ON
VD
I LR
IPK
Figure 31. Schematic and Waveforms for a ZCS Quasi-Resonant Buck Converter
www.onsemi.com
30
SMPSRM
power delivered to the load, the amount of resonant off
times are varied. For light loads, the frequency is high.
When the load is heavy, the frequency drops. In a typical
ZVS power supply, the frequency typically varies 4:1
over the entire operating range of the supply.
There are other variations on the resonant theme that
promote zero switching losses, such as full resonant
PWM, full and halfbridge topologies for higher power
and resonant transition topologies. For a more detailed
treatment, see Chapter 4 in the Power Supply
Cookbook (Bibliography reference 2).
LR
LO
CR
Vin
Cin
VI/P
FEEDBACK
CONTROL
V I/P
Vin
POWER SWITCH
TURNS ON
V
I SW
IPK
V
L
V
out
L
in
R
ILOAD
ID
in
www.onsemi.com
31
Cout
Vout
SMPSRM
VOLTAGE
Power
not used
Power used
110/220
AC VOLTS IN
I
+
CURRENT
Clarge
IAV
www.onsemi.com
32
DC To Power
Supply
SMPSRM
pulses generate more heat than a purely resistive load of
the same power. The active power factor correction
circuit is placed just following the AC rectifier bridge. An
example can be seen in Figure 34.
Depending upon how much power is drawn by the unit,
there is a choice of three different common control
modes. All of the schematics for the power sections are
the same, but the value of the PFC inductor and the
control method are different. For input currents of less
than 150 watts, a discontinuousmode control scheme is
typically used, in which the PFC core is completely
emptied prior to the next power switch conduction cycle.
For powers between 150 and 250 watts, the critical
conduction mode is recommended. This is a method of
control where the control IC senses just when the PFC
core is emptied of its energy and the next power switch
conduction cycle is immediately begun; this eliminates
any dead time exhibited in the discontinuousmode of
control. For an input power greater than 250 watts, the
continuousmode of control is recommended. Here the
peak currents can be lowered by the use of a larger
inductor, but a troublesome reverse recovery
characteristic of the output rectifier is encountered,
which can add an additional 2040 percent in losses to the
PFC circuit.
Many countries cooperate in the coordination of their
power factor requirements. The most appropriate
document is IEC6100032, which encompasses the
performance of generalized electronic products. There
are more detailed specifications for particular products
made for special markets.
Vout
Vsense
Csmall
+
Control
Clarge
To Power
Supply
Conduction Angle
Voltage
Current
IAVG
www.onsemi.com
33
SMPSRM
Bibliography
1. BenYaakov Sam, Gregory Ivensky, Passive Lossless Snubbers for High Frequency PWM Converters,
Seminar 12, APEC 99.
2. Brown, Marty, Power Supply Cookbook, ButterworthHeinemann, 1994, 2001.
3. Brown, Marty, Laying Out PC Boards for Embedded Switching Supplies, Electronic Design, Dec. 1999.
4. Martin, Robert F., Harmonic Currents, Compliance Engineering 1999 Annual Resources Guide, Cannon
Communications, LLC, pp. 103107.
5. ON Semiconductor, Rectifier Applications Handbook, HB214/D, Rev. 2, Nov. 2001.
www.onsemi.com
34
SMPSRM
38
39
39
40
41
42
43
44
46
48
50
51
53
55
Some of these circuits may have a more complete application note, spice model information or even an evaluation board
available. Consult ON Semiconductors website (www.onsemi.com) or local sales office for more information.
www.onsemi.com
35
www.onsemi.com
36
STARTUP
MMSZ46xx
MMSZ52xx
MMBZ52xx
STARTUP
REF
CS3843
CS51021
CS51022
CS51023
CS51024
CS5106
CS51220
CS51221
CONTROL
OSC
PWM
SNUBBER/
CLAMP
CONTROL
CS51227
CS5124
MC33023
MC33025
MC33065
MC33067
MC33364
MC44603A
TRANS
FORMERS
OUTPUT FILTERS
MC44604
MC44605
MC44608
NCP1200
NCP1205
UC384x
OUTPUT
FILTERS
MC33161
MC33164
MC3423
NCP30x
NCP803
OUTPUT
PROTECTION
MAX707
MAX708
MAX809
MAX810
MC33064
VOLTAGE
FEEDBACK
MC33275
MC33761
MC34268
MC78xx
MC78Bxx
MC78Fxx
MC78Lxx
MC78Mxx
MC78PCxx
MC78Txx
MC7905
MC7905.2
MC7905A
MC7906
MC7908
MC7908A
MC7912
MC7915
MC7918
MC7924
MC79Mxx
NCP1117
NCP50x
NCP51x
VOLTAGE REGULATION
L4949
LM2931
LM2935
LM317
LM317L
LM317M
LM337
LM350
LP2950
LP2951
MC33263
MC33269
V ref
VOLTAGE
REGULATION
CS51031 MC34063A
CS51033 MC34163
CS51411 MC34166
CS51412 MC34167
CS51413 NCP1400A
CS51414 NCP1402
CS5171
NCP1410
CS5172
NCP1411
NCP1417
CS5173
CS5174 NCP1450A
MC33463 NCP1550
MC33466
DCDC CONVERSION
DCDC
CONVERSION
OUTPUT PROTECTION
CS5101
NCP100
TL431/A/B
TLV431A
VOLTAGE
FEEDBACK
MBRS240L
MBR1100
MBRS360
MBR3100
MBR360 MURHF860CT
MURS360
MBRD360
MBRS1100
POWER
SWITCH
POWER MOS
DRIVERS
MC33153
1N62xxA
1N63xxA
MUR160
MUR260
MURS160
MURS260
P6KExxxA
P6SMB1xxA
HV SWITCHING
REGULATORS
MC33362
MC33363
MC33365
NCP100x
NCP105x
POWER FACTOR
CORRECTION
MC33260
MC33262
MC33368
MC34262
NCP1650
NCP1651
POWER FACTOR
CORRECTION
MC33152
MC33151
POWER MOS
DRIVERS
SNUBBER/
CLAMP
SMPSRM
USB HUB
www.onsemi.com
37
600V 8A
NCh
MOSFET
Sync
Signal
S.M.P.S
Controller
UC384x
MC44603/5
MC44608
NCP1200
NCP1205
PFC Devices
NCP1650
NCP1651
MC34262
MC33368
MC33260
Line
A.C.
RGB
or I2C
PWM
H_Sync
V_Sync
I2C BUS
MUR420
MUR440
MUR460
H_Sync
V_Sync
MC33363A/B
NCP100x
NCP105x
NCP1200
HC05
CPU
CORE MEMORY
1280
x
1024
10101100101
RWM
Overlayed
RGB
Timebase Processor
Geometry Correction
RGB
On Screen Display
Generator
Figure 37.
. 15
Monitor
Power
Supplies
UP
DOWN
H_Sync
V_Sync
SYNC PROCESSOR
Monitor
MCU
Vertical
Driver
HDriver TR
UC3842/3
MTP6P20E
HOutput TR
MTD6N10/15
RGB
Line Driver
HDriver
DC TO DC
CONTROLLER
Video
Driver
MUR8100E
MUR4100E
MUR460
Damper Diode
CRT
SMPSRM
SMPSRM
Ultrafast
Rectifier
Startup
Switch
Rectifier
Bulk
Storage
Capacitor
AC
Line
Load
PWM
Control
IC
MOSFET
noutputs
PWM Switcher
Prog.
Prec.
Ref
Table 1.
Part #
Description
Key Parameters
Samples/Prod.
MC33262
PFC Control IC
Now/Now
MC33368
PFC Control IC
Now/Now
MC33260
PFC Control IC
Now/Now
MC33365
PWM Control IC
Now/Now
MC33364
PWM Control IC
Now/Now
MC44603A/604
PWM Control IC
Now/Now
MC44605
PWM Control IC
Now/Now
MC44608
PWM Control IC
Now/Now
MSR860
Ultrasoft Rectifier
Now/Now
MUR440
Ultrafast Rectifier
Now/Now
MRA4006T3
Now/Now
MR856
Now/Now
NCP1200
Now/Now
NCP1205
Now/Now
Now/Now
UC3842/3/4/5
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38
SMPSRM
Ultrafast
Rectifier
Startup
Switch
Rectifier
Bulk
Storage
Capacitor
AC
Line
Load
PWM
Control
IC
MOSFET
noutputs
PWM Switcher
Prog.
Prec.
Ref
Table 2.
Part #
Description
Key Parameters
Samples/Prod.
MC33363A/B/65
PWM Control IC
Now/Now
MC33364
PWM Control IC
Now/Now
Now/Now
Now/Now
Now/Now
TL431B
MSRD620CT
MR856
NCP1200
Now/Now
NCP1205
Now/Now
Now/Now
UC3842/3/4/5
www.onsemi.com
39
SMPSRM
Lo
+
V in
Lo
Voltage
Regulation +
Co
Control IC
Vout
+
V in
Load
+
Control IC
Co
Vout
Load
Buck Regulator
Table 3.
Part #
Description
MC33263
MC33269
MC33275/375
LP2950/51
Key Parameters
Samples/Prod.
Now/Now
Now/Now
Now/Now
Now/Now
Now/Now
MC78PC
MC33470
Now/Now
NTMSD2P102LR2
Now/Now
NTMSD3P102R2
Now/Now
MMDFS6N303R2
Now/Now
NTMSD3P303R2
Now/Now
MBRM140T3
1A Schottky in POWERMITE
Package
40 V, 1 A, Vf = 0.43 @ 1 A; Ir = 0.4 mA @ 40 V
Now/Now
MBRA130LT3
40 V, 1 A, Vf = 0.395 @ 1 A; Ir = 1 mA @ 40 V
Now/Now
MBRS2040LT3
40 V, 2 A, Vf = 0.43 @ 2 A; Ir = 0.8 mA @ 40 V
Now/Now
A(1), 12.5
MMSF3300
30 V, 11.5
NTD4302
30 V, 18.3 A(1), 10 m @ 10 V
Now/Now
m @ 10 V
Now/Now
NTTS2P03R2
30 V, 2.7 A, 90 m @ 10 V
Now/Now
MGSF3454X/V
30 V, 4.2 A, 65 m @ 10 V
Now/Now
NTGS3441T1
Now/Now
Now/Now
NCP1500
NCP1570
Now/Now
NCP1571
Now/Now
Now/Now
CS5422
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40
400
1000
400
1000
400
1000
1N5404RL
1N5406RL
1N5408RL
Axial
Axial
Axial
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41
V RRM (V)
600
1000
600
1000
600
1000
600
MUR180E, MUR1100E
MUR480E, MUR4100E
MR756RL, MR760RL
1N4937
DIP8/SO8/SO14
DIP14/SO14
DIP16/SO16
DIP16/SO16
DIP16/SO16
DIP8
DIP16/SO16
DIP16/SO16
U384X Series
MC34060
TL494
TL594
MC34023
MC44608
MC44603
MC44603A
Part No.
Package
5 V 0.1 A
Mains
230 Vac
3
3
3
I o (A) Package
Part No.
Voltage
Standby
V RRM (V)
Part No.
60
MBR160
Axial
Axial
Axial
Axial
I o (A)
Axial
MATRIX
Package
12 V 0.8 A
5 V 0.5 A
+12 V 6 A
+5 V 22 A
+3.3 V 14 A
1
4
6
1
I o (A) Package
PWM
IC
V RRM (V)
Part No.
MBR2535CTL
MBR2545CT
MBR3045ST
MBRF2545CT
MBR3045PT
MBR3045WT
Package
TO92
TL431
I o (A)
Axial
Package
SMC
DPAK
Axial
Axial
Axial
Package
I o (A)
3
3
3
3
3
TO220
TO220
TO220
TO220
TO220
TO220
Package
TO220
TO220
TO220
TO220
TO218
TO247
Package
TO220
Package
20
20
20
16
16
16
Part No.
100
40
40
30
40
40
MBRS340T3
MBRD340
1N5821
1N5822
MBR340
V RRM (V)
V RRM (V)
Part No.
Part No.
60
100
200
200
200
200
MBR2060CT
MBR20100CT
MBR20200CT
MUR1620CT
MUR1620CTR
MURF1620CT
MBR3100
V RRM (V)
Part No.
Part No.
I o (A)
Part No.
MBR2535CTL
SMPSRM
SMPSRM
100 k
R6
8
C5
MC33262
92 to
138 Vac
RFI
FILTER
D2
D4
ZERO CURRENT
DETECTOR
D1
D3
1.6 V/
1.4 V
2.5 V
REFERENCE
TIMER
10
DRIVE
OUTPUT
10
1.5 V OVERVOLTAGE
MUR130
D5
500 V/8 A
NCh
MOSFET
Q1
4
0.1
R7
10 pF
COMPARATOR
VO
230 V/
0.35 A
+
MULTIPLIER
ERROR AMP
+
10 A
Vref
QUICKSTART
2
0.68
C1
Features:
Reduced part count, lowcost solution.
ON Semiconductor Advantages:
Complete semiconductor solution based around highly integrated MC33262.
Description
MC33262
MUR130
Transformer
Coilcraft N2881A
Primary: 62 turns of #22 AWG
Secondary: 5 turns of #22 AWG
Core: Coilcraft PT2510
Gap: 0.072 total for a primary inductance (Lp) of 320 H
www.onsemi.com
42
220
C3
1.0 M
R2
+ 1.08 Vref
Devices:
Part Number
22 k
R4
UVLO
20 k
CURRENT
SENSE
COMPARATOR
7.5 k
R3
16 V
RS
LATCH
0.01
C2
6.7 V
100
C4
+ 13 V/
8.0 V
DELAY
2.2 M
R5
36 V
1.2 V
1N4934
D6
11 k
R1
SMPSRM
Vcc
FUSE
0.33 F
1N5404
AC LINE 100 nF
L1
10 F/
16 V
MAINS
FILTER
Vout
MUR460
100 nF
8
MC33260
7
10
500 V/8 A
NCh
MOSFET
6
5
12 k
1 M
120 pF
45 k
0.5 /3 W
1 M
Features :
Lowcost system solution for boost mode follower.
Meets IEC100032 standard.
Critical conduction, voltage mode.
Follower boost mode for system cost reduction smaller inductor and MOSFET can be used.
Inrush current detection.
Protection against overcurrent, overvoltage and undervoltage.
ON Semiconductor advantages:
Very low component count.
No Auxiliary winding required.
High reliability.
Complete semiconductor solution.
Significant system cost reduction.
Devices:
Part Number
MC33260
MUR460
1N5404
Description
Power Factor Controller
Ultrafast Recovery Rectifier (600 V)
General Purpose Rectifier (400 V)
www.onsemi.com
43
100 F/
450 V
SMPSRM
1 nF/1 kV
RFI
FILTER
MR856
1 nF/500 V
4.7 M
1
1 nF/500 V
120 pF
150 F
400 V
3.9 k/6 W
1N4934 MCR226
100 nF
1N4934
22 k
MR856
47 F
25 V
3.3 k
1.2 k
4.7 k
1N4148
2W
SYNC
47 F
47 F
Vin
D1 D4
1N5404
90 V/0.1 A
10
10 pF
47 k
45 V/
1A
15 V/
0.8 A
10 V/
0.3 A
8 V/
1.5 A
1000 F
MR856
1 H
SMT31
2.2 nF
MR852
470 pF
6
MC44605P
4.7 F 2.2 k
11
+
8.2 k
12
22
470
1N4148
nF
k
13
2.2 nF
14
56 k
4.7 F +
10 V
4.7 F+
10 V
560 k
4
3
15
16
150 k
470 pF
MR852
Note 1
220 F
10
1 k
270
470
56 k
1000 F
Lp
1N4934
MBR360
0.1
10 k
4700 F
100
MOC8107
1.8 M
10 k 96.8 k
Vin
100 nF
TL431
2.7 k
1N4742A
12 V
2.7 k
100 nF
VP
FROM P
0: STANDBY
1: NORMAL MODE
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44
SMPSRM
Features:
Off power consumption: 40 mA drawn from the 8 V output in Burst mode.
Vac (110 V) about 1 watt
Vac (240 V) about 3 watts
Efficiency (pout = 85 watts)
Around 77% @ Vac (110 V)
Around 80% @ Vac (240 V)
Maximum Power limitation.
Overtemperature detection.
Winding short circuit detection.
ON Semiconductor Advantages:
Designed around high performance current mode controller.
Builtin latched disabling mode.
Complete semiconductor solution.
Devices:
Part Number
MC44605P
TL431
MR856
MR852
MBR360
BC237B
1N5404
1N4742A
Transformer
Description
High Safety Latched Mode GreenLinet Controller
For (Multi) Synchronized Applications
Programmable Precision Reference
Fast Recovery Rectifier (600 V)
Fast Recovery Rectifier (200 V)
Axial Lead Schottky Rectifier (60 V)
NPN Bipolar Transistor
GeneralPurpose Rectifier (400 V)
Zener Regulator (12 V, 1 W)
G635100 (SMT31M) from Thomson Orega
Primary inductance = 207 H
Area = 190 nH/turns2
Primary turns = 33
Turns (90 V) = 31
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SMPSRM
C30
100 nF
250 Vac
RFI
FILTER
LF1
C19
1 nF/1 kV
R21
4.7 M
D1D4
1N4007
C1
220 F
3.8 M
C4C5
1 nF/1 kV
R7
68 k/1 W
D13
1N4148
C16
100 F
D15
1N4148
C9
100 nF
9
C8 560 pF
10
C10 1 F
11
R18
12
5.6 k
R15
1 M
C7
10 nF
13
6
5
4
14
15
16
D12
MR856 C20
47 F
C12
1 nF
L3
22 H
115 V/0.45 A
D23
47 F
15 V/1.5 A
D5
MR854
C21
1000 F
1 k
15 k
11 V/0.5 A
180 k
R8
1 k
D8
MR854
Q1
600 V/4 A
NCh
MOSFET
R33
0.31
C14
220 pF
R13
10 k
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C22
1000 F
OREGA TRANSFORMER
G619100
THOMSON TV COMPONENTS
R9 150
R5
2.2 k
R14
47 k
C26
4.7 nF
C11
100 pF R22
R20 47
R4
3.9 k
C15 220 pF
D7
1N4937
L1
1 H
R19
27 k
MC44603AP
R3
22 k
R16
68 k/2 W
SMPSRM
Features:
70 W output power from 95 to 265 Vac.
Efficiency
@ 230 Vac = 86%
@ 110 Vac = 84%
Load regulation (115 Vac) = 0.8 V.
Cross regulation (115 Vac) = 0.2 V.
Frequency 20 kHz fully stable.
ON Semiconductor Advantages:
DIP16 or SO16 packaging options for controller.
Meets IEC emi radiation standards.
A narrow supply voltage design (80 W) is also available.
Devices:
Part Number
MC44603AP
Description
MR856
MR854
1N4007
1N4937
Transformer
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SMPSRM
F1
C31
100 nF
47283900 R F6
C19
2N2FY
RFI
FILTER
C3
1 nF
C11
220 pF/500 V
+
C4
1 nF
D5
1N4007
R5 100 k
C5
R1
220 F 22 k
400 V
5W
112 V/0.45 A
14
C6
47 nF
630 V
D6
MR856
C12
47 F/250 V
12
MC44608P75
Isense
2
3
7
Vcc
R2
10
C8
100 nF
11
8 V/1 A
C14 +
1000 F/35 V
10
C16
100 pF
D14
MR856
D10
MR852
R17
2.2 k
5W
R4 3.9 k
D9 MR852
C9
470 pF
630 V
600 V/6 A
NCH
MOSFET
DZ1
MCR226
R19
18 k
D13
1N4148
R12
1 k
C15
1000 F/16 V
R3
0.27
ON
R21 47
C18
100 nF
OFF
R9
100 k
OPT1
R11
47 k
DZ3
10 V
1N4740A
C19
33 nF
DZ2
TL431CLP
R10
10 k
R8
2.4 k
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J3
3
1
D12
1N4934
C7
22 F
16 V
16 V/1.5 A
C13
100 nF
R7 47 k C17 120 pF
D7
1N4148
1
D18 MR856
ON = Normal mode
OFF = Pulsed mode
J4
SMPSRM
Features:
Off power consumption: 300mW drawn from the 8V output in pulsed mode.
Pin = 1.3W independent of the mains.
Efficiency: 83%
Maximum power limitation.
Overtemperature detection.
Demagnetization detection.
Protection against open loop.
ON Semiconductor Advantages:
Very low component count controller.
Fail safe open feedback loop.
Programmable pulsedmode power transfer for efficient system standby mode.
Standby losses independent of the mains value.
Complete semiconductor solution.
Devices:
Part Number
Description
MC44608P75
TL431
MR856
MR852
1N5404
1N4740A
Transformer
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SMPSRM
130 to 350 V DC
R1
C3
220 F/
10 V
D1
150
1N4148
C2
220 F/
10 V
D3
R3
220 k
C10
1 nF
R13
100 k
R1
150
1N4148
M1
MMG05N60D
R11
113 k
120 k
C3
10 F/
350 V
R5
IC1
MOC8103
1k
MC14093
R5
1.2 k
+
1
D2
12 V
R9
Q1
MBT3946DW
C9
1 nF
C4
47 nF
470
C5
1 nF
R2
3.9
R9
100
Q5
R10
0V
Features:
Universal ac input.
3 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Specialprocess IGBT (Normal IGBTs will not function properly in this application).
Off the shelf components.
SPICE model available for MC33341.
Devices:
Part Number
MMG05N60D
MC33341
MBT3946DW
MBRS240LT3
MC14093
1N4937
Description
Insulated Gate Bipolar Transistor in SOT223 Package
Power Supply Battery Charger Regulator Control Circuit
Dual General Purpose (Bipolar) Transistors
Surface Mount Schottky Power Rectifier
Quad 2Input NAND Schmitt Trigger
GeneralPurpose Rectifier (600 V)
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C8
1 F
MC33341
C7
10 F
MBRS240LT3
D5
R2
D4
1N4937
8 V at 400 mA
D4
12 V
R12
20 k
SMPSRM
RFI
FILTER
C3
1 nF / 1 KV
R1
1/5W
R3
4.7 k
C4C7
1 nF / 1000 V
C32
C1
100 F
D1D4
1N4007
C2
220 F
R2
68 k / 2 W
9
C10
820 pF
1 F
R15
10 k
C11
1 nF
R16
10 k
R18
27 k
10
11
12
13
MC44603P
C9
L1
1 H
28 V / 1 A
D9
MR852
15
16
R19
10 k
R10
10
C13
100 nF
C27
1000 F
R6
180
C26
220 pF
15 V / 1 A
D10
MR852
R26
1 k
C25
1000 F
C23
R14
2 X 0.56 //
8V/1A
D11
MR852
R17
10 k
R24
270
R21
C19
10 k 100 nF
C12
6.8 nF
TL431
Note 1: 600 V/ 6 A NChannel MOSFET
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C24
0.1 F
220 pF
C21
1000 F
R25
1 k
C28
0.1 F
LP
C14
4.7 nF
Note 1
14
C31
0.1 F
220 pF
R5
1.2 k
R8
15 k
C29
D6
1N4148
C15
1 nF
R7
180 k
D7
MR856
C30
100 F
Laux
R9
C16
100 pF 1 k
D8
MR856
C17
47 nF
R4
27 k
8
120 V / 0.5 A
R20
22 k
5W
D5
1N4934
220 pF
C22
0.1 F
R23
117.5 k
D14
1N4733
C20
33 nF
R22
2.5 k
SMPSRM
Features:
Offline operation from 180 V to 280 Vac mains.
Fixed frquency and standby mode.
Automatically changes operating mode based on load requirements.
Precise limiting of maximum power in fixed frequency mode.
ON Semiconductor Advantages:
Builtin protection circuitry for current limitation, overvoltage detection, foldback, demagnetization and softstart.
Reduced frequency in standby mode.
Devices:
Part Number
MC44603P
MR856
MR852
TL431
1N4733A
1N4007
Description
Enhanced Mixed Frequency Mode GreenLinet PWM Controller
Fast Recovery Rectifier (600 V)
Fast Recovery Rectifier (200 V)
Programmable Precision Reference
Zener Voltage Regulator Diode (5.1 V)
General Purpose Rectifier (1000 V)
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SMPSRM
C14 100 nF
AGND
250 V
250 V
C12 22 nF
R18 PTC
C11 4.7 nF
1200 V
PTUBE =
55 W
T1A
FT063
L1 1.6 mH
Q3
MJE18004D2
Q2
MJE18004D2
R13
2.2 R
R14
2.2 R
R11
4.7 R
C9
2.2 nF
C8
2.2 nF
R12
4.7 R
DIAC
C6 10 nF
C7 10 nF
D4
R10
10 R
T1B
D3 1N4007
T1C
C5 0.22 F
R9
330 k
C4 47 F
+
450 V
R7 1.8 M
P1 20 k
C15 100 nF
D2 MUR180E
Q1
500 V/4 A NCh
R6 1.0 R
MOSFET
3
D9
C16
47 nF
R5 1.0 R
AGND
5
+
C2
330 F
25 V
8
R3
100 k/1.0 W
R2 1.2 M
630 V
1N5407
D7
1N5407
U1
MC34262
R4 22 k
D1
MUR120
1N5407
D8
1
2
T2
1N5407
D6
FILTER
C3 1.0 F
C17 47 nF
1
630 V
C1 10 nF
FUSE
LINE
220 V
R1 12 k
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SMPSRM
Features:
Easy to implement circuit to avoid thermal runaway when fluorescent lamp does not strike.
ON Semiconductor Advantages:
Power devices do not have to be oversized lower cost solution.
Includes power factor correction.
Devices:
Part Number
Description
MC34262
MUR120
MJE18004D2
1N4007
1N5240B
1N5407
1, 2 Lamps
3, 4 Lamps
BUL642D2
MJD18002D2
MJD18202D2
BUL642D2
MJB18004D2
MJB18204D2
MJE18204D2
ON Semiconductors H2BIP process integrates a diode and bipolar transistor for a single package solution.
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SMPSRM
F1
250R
1N4140
R1
1N4140
220
D3
4 k
D4
C2 20 F
BZX84/18V
1N4140
R3
Line
VCC
ICD
U1
MC33364
5
GND
Vref
C3
100 nF
C3
FL
R2
+
D2
22 k
1N4140
D5
R4
330
R5
D7
J2
1
2
C5
MURS320T3
47 k
R6
47 k
C4
1 nF
2
D6
R14
22 k
U2
7 6 5
MURS160T3
VSI
10 V
R8
100
T1
6
5V
MC33341
Q1
600 V/1 A
NCh MOSFET
R7
2.7
GND
10 F/350 V
R4
D8 C5 + 4 k
D9
1 F
BZX84/5 V
100 F +
CMP
LINE
C1
DO
VCC
CSI
CTA
CSI
J1
1 2 3 4
C7
3
5
1SO1
MOC0102
4
R10
100 R
33 nF
R11
0.25
Figure 50. ACDC Battery Charger Constant Current with Voltage Limit
Features:
Universal ac input.
9.5 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Off the shelf components
SPICE model available for MC33341
Devices:
Part Number
MC33341
MC33364
MURS160T3
MURS320T3
BZX84C5V1LT1
BZX84/18V
Transformer
R13
12 k
Description
Power Supply Battery Charger Regulator Control Circuit
Critical Conduction SMPS Controller
Surface Mount Ultrafast Rectifier (600 V)
Surface Mount Ultrafast Rectifier (200 V)
Zener Voltage Regulator Diode (5.1 V)
Zener Voltage Regulator Diode (MMSZ18T1)
For details consult AN1600
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R12
10 k
SMPSRM
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SMPSRM
DL128/D
DL111/D
DL137/D
Power MOSFETs
DL135/D
DL150/D
DL151/D
SG388/D
Device Models
Device models for SMPS circuits (MC33363 and MC33365), power transistors, rectifiers and other discrete products
are available through ON Semiconductors website or by contacting your local sales office.
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SMPSRM
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SMPSRM
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SMPSRM
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SMPSRM
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ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for
each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such
unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This
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