Bipolar Junction Transistor Tutorial

We can summarise this transistors tutorial section as follows:

The Bipolar Junction Transistor (BJT) is a three layer device constructed form two
semiconductor diode junctions joined together, one forward biased and one reverse
biased.
There are two main types of bipolar junction transistors, the NN and
the N transistor.
Transistors are !Current Operated Devices" where a much
smaller Base current causes a larger #mitter to $ollector current, which
themselves are nearly e%ual, to &ow.
The arrow in a transistor symbol represents conventional current &ow.
The most common transistor connection is the $ommon'emitter
con(guration.
)e%uires a Biasing voltage for *$ ampli(er operation.
The Base'#mitter junction is always forward biased whereas the $ollector'
Base junction is always reverse biased.
The standard e%uation for currents &owing in a transistor is given
as+ ,# - ,B . ,$
The $ollector or output characteristics curves can be used to (nd
either ,b, ,c or / to which a load line can be constructed to determine a
suitable operating point, 0 with variations in base current determining the
operating range.
* transistor can also be used as an electronic switch to control devices such
as lamps, motors and solenoids etc.
,nductive loads such as 1$ motors, relays and solenoids re%uire a reverse
biased !2lywheel" diode placed across the load. This helps prevent any
induced bac3 emf4s generated when the load is switched !522" from
damaging the transistor.
The NN transistor re%uires the Base to be more positive than
the #mitter while the N type re%uires that the #mitter is more positive than
the Base.
2ield #6ect Transistor Tutorial
Field Efect Transistors, or 2#T4s are !Voltae Operated Devices" and
can be divided into two main types+ Junction'gate devices
called J2#T4s and ,nsulated'gate devices called ,72#T8s or more commonly
3nown as 95:2#Ts.
,nsulated'gate devices can also be sub'divided into #nhancement types
and 1epletion types. *ll forms are available in both N'channel and 'channel
versions.
2#T4s have very high input resistances so very little or no current (95:2#T
types) &ows into the input terminal ma3ing them ideal for use as electronic
switches.
The input impedance of the 95:2#T is even higher than that of the J2#T due
to the insulating o;ide layer and therefore static electricity can easily damage
95:2#T devices so care needs to be ta3en when handling them.
<hen no voltage is applied to the gate of an enhancement 2#T the transistor
is in the !522" state similar to an !open switch".
The depletion 2#T is inherently conductive and in the !5N" state when no
voltage is applied to the gate similar to a !closed switch".
2#T4s have very large current gain compared to junction transistors.
They can be used as ideal switches due to their very high channel !522"
resistance, low !5N" resistance.
To turn the N'channel J2#T transistor !522", a negative voltage must be
applied to the gate.
To turn the 'channel J2#T transistor !522", a positive voltage must be
applied to the gate.
N'channel depletion 95:2#Ts are in the !522" state when a negative voltage
is applied to the gate to create the depletion region.
'channel depletion 95:2#Ts, are in the !522" state when a positive voltage
is applied to the gate to create the depletion region.
N'channel enhancement 95:2#Ts are in the !5N" state when a !.ve"
(positive) voltage is applied to the gate.
'channel enhancement 95:2#Ts are in the !5N" state when !'ve" (negative)
voltage is applied to the gate.
The 2ield #6ect Transistor $hart

Biasing of the 7ate for both the junction (eld e6ect transistor, (J2#T) and the metal
o;ide semiconductor (eld e6ect transistor, (95:2#T) con(gurations are given as+
T!pe Junction FET "etal O#ide $emiconductor FET
1epletion 9ode 1epletion 9ode #nhancement 9ode
Bias 5N 522 5N 522 5N 522
N'channel =v 've =v 've .ve =v
'channel =v .ve =v .ve 've =v
1i6erences between a 2#T and a Bipolar Transistor
2ield #6ect Transistors can be used to replace normal Bipolar Junction Transistors in
electronic circuits and a simple comparison between 2#T4s and transistors stating
both their advantages and their disadvantages is given below.
Field Efect Transistor %FET&
Bipolar Junction Transistor
%BJT&
> ?ow voltage gain @igh voltage gain
A @igh current gain ?ow current gain
B Cery input impedance ?ow input impedance
D @igh output impedance ?ow output impedance
E ?ow noise generation 9edium noise generation
F 2ast switching time 9edium switching time
G #asily damaged by static )obust
H
:ome re%uire an input to turn it
!522"
)e%uires Iero input to turn it
!522"
J Coltage controlled device $urrent controlled device
>=
#;hibits the properties of a
)esistor

>> 9ore e;pensive than bipolar $heap
>A 1iKcult to bias #asy to bias