600V GaN Power Transistor

Applications
Power Supply for Data Centers / Base Transceiver Stations
Automotive ( HEV / EV / PHEV ) etc.
Features
GaN Power Transistor (TO220 Package)
Normally-Off
Current-Collapse-Free
Zero Recovery
Sample
Available
ID(Continuous) : 15A
RDS(on) : 65m
Qg : 11nC
Maximum Field
Strength
1
On-resistance
(a.u.)
(a.u.)
Tjmax
Maximum Operating
Frequency
Maximum
Current
(a.u.)
(a.u.)
(a.u.)
- GaN is an excellent power device with high breakdown voltage and fast
switching.
- Meet increasing demand of energy saving and downsizing.
- GaN is an excellent power device with high breakdown voltage and fast
switching.
- Meet increasing demand of energy saving and downsizing.
Potential of GaN Material (vs. SiC and Si)
Substrates Used for GaN Transistors
On-sapphire
On-SiC
Relatively high cost (~600$@4inch)
Poor thermal conductivity (0.35W/cm-K)
Low-loss waveguide is available
On-Si
Extremely high cost (~5,000$@2inch)
Good thermal conductivity (3.5W/cm-K)
Semi-Insulating substrate is available
Low cost (~20$@6inch)
Good thermal conductivity (1.5W/cm-K)
Conductive substrate
Low-power MMIC
LNA, SW, Front-end
High-power Amp
@Microwave
/Millimeter-wave
Switching Power
High-speed/Low-loss
GaN Epitaxial Growth Technique on Si Substrate
AlN
AlGaN
Super-lattice Buffer
AlN
GaN
Compressive
Strain
Strain
Relaxation
GaN
Si(111) substrate
Lattice constant: Si>GaN>AlN
Thermal expansion coefficient: Si<GaN<AlN
MOCVD epitaxial structure
AlGaN/AlN initial layer
GaN/AlN Super-lattice
6-inch epitaxy on Si
Mirror surface / Crack-free
High mobility with good uniformity
Approaches for Normally-Off AlGaN/GaN HFET
a-face FET
(1)
F-doped Gate
(2)
MIS-HFET
(3)
p-type Gate HFET
(GIT)
(4)
Structure
Advantages
Simple process
Simple structure
Low leak current
Controllability of
Vth
Low leak current
Large Imax
Controllability of
Vth
Good reliability
confirmed
Challenges
Epitaxial Growth
No polarization
induced charge
Increase Imax
Stability of Doped
Fluorine
Controllability of
Vth
Stability of
insulator/semicond
uctor interface
(3) S.Sugiura et al Phys Stat Solidi 5(2008) 1923.
T.Imada et al Proc of IPEC 23C(2010),1027
(4)Y.Uemoto et al IEEE Trans Electron Dev, 54(2007) 3393.
(1) M.Kuroda et al IEEE Trans Electron Device,57(2010) 368.
(2)Y.Cai et al IEEE Electron Dev Lett, 26(2005) 435.
Substrate
GaN
AlGaN
S D G
Substrate
GaN
AlGaN
S D
G
Insulator
Substrate
GaN
AlGaN
S D G
F-plasma treatment
Substrate
GaN
AlGaN
S D
G
P-AlGaN
e.g. a-GaN/r-sapphire
Gate Injection Transistor
(GIT)
Normally-Off Operation
p-AlGaN lifts up the potential
at the channel
Low on-resistance
Hole injection from p-AlGaN to
AlGaN/GaN channel
increases the drain current
using conductivity modulation
Gate
p-AlGaN
i-AlGaN
i-GaN
Source Drain
m
h
<< m
e
Schematic cross-section
A New Normally-Off GaN Transistor - GIT -
I-V characteristics
Normally off
Panasonic
GIT
Normally on
Conventional
GaN-FET
Large drain current
0.0
0.2
0.4
0.6
0.8
1.0
-4 -2 0 2 4 6
Gate Voltage (V)
D
r
a
i
n

C
u
r
r
e
n
t
(
a
.
u
.
)
GIT Operation
pAlGaN
iAlGaN
iGaN
Gate Source
Drain
- - - -
No current flows
- - - - -
off
pAlGaN
iAlGaN
i-GaN
- - - - - - - - - -
Gate Source
Drain
m

<< m
e
- - -
Large drain current
- - -
- - - - - -
+
+
+ + +
-
on
Vg = 0V
p-gate potential depletes the
channel under the gate

No drain current
Vg > Vf of GaN-PN junction
Hole injection

Electron generation

Large drain current

(conductivity modulation)
Reverse I-V Characteristics
No voltage-offset at the Vgs of 5V (FET mode)
GIT can be operated as if a diode at the Vgs of 0V
(Reverse-conduction mode)
-400
-300
-200
-100
0
100
200
300
400
-10 -8 -6 -4 -2 0 2 4 6 8 10
Vds (V)
(
)
Vgs=5V
4V
3V
2V
1V, 0V
step=+1V
FET mode
Reverse
Conduction
Mode
Vds (V)
I
d
s

(
m
A
/
m
m
)
Vgs=0V
Vgs=5V
On-state I-V Characteristics
Vgs=5V
Current-Collapse-Free
No destruction and degradation was not observed up to 600V.
0
2
4
6
8
10
300 400 500 600 700
Drain-Source Voltage (V)
O
n
-
r
e
s
i
s
t
a
n
c
e

(
a
.
u
.
)
Measured under the condition of practical use
Low On-Resistance
High Frequency
Operation
-Low on-resistance realizes high efficiency power supplies.
-High frequency operation realizes compact power supplies.
-Low on-resistance realizes high efficiency power supplies.
-High frequency operation realizes compact power supplies.
Current
AC-DC
( Si )
High
Efficiency
AC-DC
( GaN )
Compact
AC-DC
( GaN )
Half Loss
H
a
l
f

S
i
z
e
Efficiency
S
i
z
e
100%
50%
100%
50%
Power Supply Innovation
Conclusion
GaN Predominance
- Normally-Off
- Current-Collapse-Free
- Zero Recovery
Applications
- Power Supply for
Data Centers and Base Transceiver Stations
- Automotive (HEV / EV / PHEV) etc.
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semiconductors described in this book
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