Semiconductor Physics, Electronic Devices and Circuits

Biyani's Think Tank
Concept based notes
Semiconductor Physics,
Electronic Devices and Circuits
(BCA Part-I)
Ashish Sharma
M.Sc. (Physics)
Anupama Upadhyay
Revised By: Mr Vijay
M.Sc. (Physics)
Lecturer
Deptt. of Information Technology
Biyani Girls College, Jaipur
Published by :
Think Tanks
Biyani Group of Colleges
Concept & Copyright :
Biyani Shikshan Samiti

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ISBN: 978-93-81254-35-9
Edition : 2011
Price :
While every effort is taken to avoid errors or omissions in this Publication, any
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Semiconductor Physics, Electronic Devices and Circuits
Preface
am glad to present this book, especially designed to serve the needs of the
students. The book has been written keeping in mind the general weakness in
understanding the fundamental concepts of the topics. The book is self-explanatory and
adopts the Teach Yourself style. It is based on question-answer pattern. The language
of book is quite easy and understandable based on scientific approach.
Any further improvement in the contents of the book by making corrections,
omission and inclusion is keen to be achieved based on suggestions from the readers
for which the author shall be obliged.
I acknowledge special thanks to Mr. Rajeev Biyani, Chairman & Dr. Sanjay Biyani,
Director (Acad.) Biyani Group of Colleges, who are the backbones and main concept
provider and also have been constant source of motivation throughout this Endeavour.
They played an active role in coordinating the various stages of this Endeavour and
spearheaded the publishing work.
I look forward to receiving valuable suggestions from professors of various
educational institutions, other faculty members and students for improvement of the
quality of the book. The reader may feel free to send in their comments and suggestions
to the under mentioned address.
Author
Syllabus
B.C.A. Part-I
SEMICONDUCTOR PHYSICS,
ELECTRONIC DEVICES AND CIRCUITS
[This course is of introductory nature as such rigorous mathematical analysis should be avoided
and emphasis should be on concepts and contents of mathematical expressions]
1.
2.
3.
4.
5.
6.
7.
Structure of Matter (Molecule, Atom), Atomic Structure (Energy Levels and Electronic
Configuration), Intermolecular Forces, Phases of Matter, Types of Solids, Crystal
Structure of Solids, Atomic Bonding (Ionic Covalent and Metallic Bondings), Energy
Band Theory of Crystals, Energy Band Structure of Insulators, Semiconductors and
Metals.
Mobility and Conductivity, Electrons and Holes in Intrinsic, Semiconductor Elementary
Properties of Germanium and Silicon, Donor and Acceptor impurities, Extrinsic
Semiconductors, Generation and Recombination of Charges, Diffusion.
Energy Band Structure of Open Circuit P-N Junction, Depletion Region, P-N Junctions as
a Rectifier, Current Components of a P-N Diode, Ideal Voltage, Ampere Characteristics,
Temperature Dependence of the V-I Characteristics, Diode Resistance Varactor Diodes,
Junction Diode Switching Times, Breakdown Diodes, Tunnel Diode, Semiconductor
Photodiode, Photovoltaic Effect, Light Emitting Diodes.
Half-wave and Full-wave Rectifiers, Ripple Factor, Efficiency, Voltage Regulation,
Inductor Filters, Capacitor Filters, L and Section Filters, Regulated Power Supplies,
Information about SMPS Supply.
Bipolar Junction Transistors, Bipolar Transistor Action, Basic Principle of Operation
Open Circuited Transistor, Transistor Biased in Active Region, Current Components in a
Transistor, Characteristic Curves in Common Emitter, Common Base and Common
Collector Configurations, Expression for , and , Hybrid Parameters of a Transistor.
Transistor as an Amplifier, Frequency Response of an Amplifier, RC Coupled Amplifier,
Feedback Concepts and Oscillator.
Elementary Information about Field Effect Transistors, Thyristors, Optoelectronic
Devices and Display Devices.
Content
S. No.
1.
2.
3.
4.
Name of Topic
Structure of Solid
1.1
Types of Solids
1.2
Crystal Structure of Solids
1.3
Atomic Bonding
1.4
Energy Band Structure
Transport Phenomena in Semiconductor

2.1
Mobility and Conductivity
2.2
Semiconductor Ge and Si (Intrinsic

Semiconductors)
2.3
Extrinsic Semiconductors
2.4
Diffusion
Semiconductor Diodes
3.1
Open Circuit P-N Junction
3.2
Temperature Dependence of the V-I Curve
3.3
Types of Diodes
Rectification & Power Supply

4.1
Half Wave and Full Wave Rectifier
4.2
Filters
4.3
SMPS Supply
S. No.
5.
6.
7.
8.
Name of Topic
Bipolar Junction Transistor
5.1
Basic Principle
5.2
Characteristic Curves in Different Configurations
5.3
Hybrid Parameters of a Transistor
Amplifiers and Oscillators

6.1
Transistor as an Amplifier
6.2
RC Coupled Amplifier
6.3
Feed Back Concepts and Oscillator
FETs, Thyristors and Opto-electronic Devices

7.1
Elementary Information about FET
7.2
Thyristors
7.3
Opto Electronic Devices
Unsolved Papers 2011 to 2006
Chapter-1
Structure of Solid
Q.1
What do you understand by Interatomic and Intermolecular Forces? How are

they different from each other?
Ans.: The Net force of attraction between atoms is called Interatomic Force whereas
the net force of attraction between molecules is called Intermolecular Force.
Interatomic Forces are mainly of four types :
(i) Ionic Bond
(ii) Covalent Bond
(iii) Metallic Bond
(iv) Vander Waals Bond
Types of Intermolecular Forces :

(i)
Dipole Dipole Interactions
(ii)
Instantaneous Dipole Induced Dipole Interactions
(iii)
Hydrogen Bond
Differences between Interatomic an Intermolecular Forces :
Q.2
(i)
Intermolecular Forces are generally weaker than the Interatomic Forces.
(ii)
The equilibrium separation of two molecules is large compared to the

equilibrium separation of two atoms.
(iii)
Intermolecular Forces are generally dependent on the relative orientation

of two molecules in addition to the dependence on the distance between
then but for Interatomic Forces it s not so.
What do you understand by Space Lattice? List the name of Fundamental

Crystal System.
Ans.: Lattice : The Lattice is defined as an array of points in space such that the
environment about each point is same with the environment about any other
point.
Linear Lattice : It is are array of infinite points is one dimension.
Two Dimensional Lattice : It is a repetition of linear lattice in another direction
by a regular interval of distance.
Space Lattice or Three Dimensional Lattice : If the points of two dimensional
lattice are repeated in another non-coplanar direction by a regular interval of
distance, then they form three dimensional lattice called Space Lattice.
Fundamental Types of Lattice :
Q.3
(i)
Cubic
(ii)
Tetragonal
(iii)
Orthorhombic
(iv)
Rhombohedral
(v)
Hexagonal
(vi)
Monoclinic
(vii)
Triclinic
What do you mean by Crystalline and Amorphous Solids? Point out some
important differences between them.
Ans.: The solids which have regular and periodic arrangement of atoms or molecules
in a definite and long range order are called Crystalline Solids.
Amorphous or Glassy Solids : Solids which do not have any permanent shape
or do not have any regular and periodic arrangement of atoms or molecules are
said to be Amorphous Solids.
Difference between Crystalline and Amorphous Solids
S.No.
Amorphous Solids
These are isotropic in nature.
Crystalline Solids
These are anisotropic.
All the bonds in the All bonds have same bond

Amorphous Solids are not strength.
equally strong.
These are not bounded by flat The Crystalline Solids are
surfaces.
bounded by the flat surfaces.
They lack a long-range order There is definite and long range
of bounding in their structure. order of arrangement of atoms
or molecules in a Crystalline
Solid.
Q.4
What are Conduction Band, Valance Band and Forbidden Gap. Explain these
bands by proper diagrams.
Ans.: Valance Band : The energy band in which the valance electrons are situated is
called Valance Band.
Conduction Band : The allowed energy band above the Valance Band (i.e.
having higher energy state) which is almost empty in the unexcited state is called
Conduction Band.
Forbidden Energy Gap : In between the Conduction and Valance Bands there is
an energy gap in which no allowed energy level is situated. This energy gap is
called Forbidden Energy Gap.
10
As shown in above figure PQ represents Conduction Band, RS is Valance Band

and QR is Forbidden Energy Gap.
Q.5
Compare the resistivities of Conductors, Semiconductors and Insulators. What

the order of Forbidden Energy Gap in there substances?
Ans.: Conductors : In conductors, forbidden energy gap is not present i.e. Eg = 0. At

normal temperatures their electrical conductivity is very high of the order of 10 6
to 108 mho/m and resistivity is very low of the order of 10-8 to 10-6 Ohmm.
Insulators : The forbidden energy gap Eg in insulators is very large. Their
conductivity is very small of the order of 10-12 to 10-18 mho/m. The resistivity of
such materials is very high of the order of Eg > 5 ev.
Semiconductors : In these materials there is a finite forbidden energy gap
between their conduction and valance bands but it is much less their the
forbidden energy gap of insulators, It is of the order of 1 ev.
11
The conductivity of semiconductors is of the order of 10-7 to 10 mho/m and

resistivity of the order of 10-1 to 107 ohm-m.
Q. 6
Write down the Postulates of Bohrs Atomic Model.
Ans.: Postulates of Bohrs Atomic Model : According to Bohrs Model, an atom is

composed of electrons moving in various fixed circular or elliptical orbits around
a heavy nucleus made up of protons and neutrons.
Diagram : An Atomic Structure

Electrons : Electrons are negatively charged elementary particles moving around
the positively charged nucleus in different but fixed orbits. Mass of an electronic
is 9.1 x 10-31 kg and charge on electron is -1.6 x 10-19 coulomb.
Nucleus : It is a central hard care of an atom and contains protons and neutrons.
Neutrons are electrically neutral while protons carry positive charge equal to the
magnitude of electrons charge. Mass of Both protons and electron is about 1840
times of electrons mass.
Atomic Number (Z) : The number of protons on atom has is called its Atomic
Number (Z).
Atomic Mass Number (A) : The total number of protons (Z) and neutrons (N)
contained in the nucleus of an atom is called its Atomic Mass Number (A).
Multiple Choice Questions:
1.
According to Daltons atomic theory, an atom can:
12
(a)
(b)
(c)
(d)
2.
3.
( )
A matter has neither definite volume nor fixed shape is:

(a)
solid
(b)
liquid
(c)
gas
(d)
None of the above
( )
The maximum number of electrons possible in the shell of principal quantum number
n1 is
(a)
(c)
4.
be destroyes
be created
either be destroyed ar created
neither be destroyed nor created
n2
2n
The strongest bond is:

(a)
Ionic bond
(c)
Molecular bond
(b)
(d)
2n 2
n(n+1)
( )
(b)
(d)
Covalent bond
Metallic bond
( )
The reason for inter-molecular forces is:

(a)
Only dipole-dipole interactions
(b)
Only induced dipole interactions
(c)
Dispersive forces
(d)
All of the above
(a)
lonic
(c)
vander Waal
( )
Covalent
Metallic
( )
In the metals, the most common interaction is:

(a)
ion-ion
(b)
(c)
election-electron
(d)
ion-electron
repulsive
( )
Election-volt is the unit of:

(a)
Momentum
(c)
Energy
Velocity
Potential
( )
The electron orbiting the nucleus possesses:

(a)
Potential energy only
(b)
Kinetic energy only
(b)
(d)
(b)
(d)
(c)
(d)
10
11
12
13
14
16
Partially potential and partially kinetic energy

None of the above
( )
The cause of conductivity in metal is:

(a)
Proton
(c)
Bound electron
(b)
(d)
Free electron
Ions
( )
The valence bond at OK is:

(a)
Completely filled
(c)
Partially
(b)
(d)
completely empty
Nothing can be said
( )
Semi-conductors such as Germanium and silicon exhibit.

(a)
Covalent bonding
(b)
Metallic bonding
(c)
Ionic bonding
(d)
van der walls bonding
( )
Holes are present in:

(a)
Valence band
(b)
Conduction band
(c)
Conduction and valence band
(d)
None of the above
( )
The maximum intertomic distances exists in :
(a)
(c)
15.
13
Solids
Gases
(b)
(d)
Liquids
Both in liquids and solids
( )
Which of the following elements is a covalently bonded crystal?

(a)
Ar
(b)
NaCL
(c)
Ge
(d)
Na
( )

(a)
Solids
(b)
(c)
Gases
(d)
( )
Liquids
17
Each energy band of a small piece of solid containing 100 atoms will have closely
spaced energy levels equal to:
(a)
50
(b)
100
(c)
200
(d)
500
( )
18
14
(a)
(c)
19
20.
21.
22
23
24
25.
26
27.
Ar
Ge
(b)
(d)
NaCL
Na
( )
The maximum number of electrons in nth shell of an atom is:

(a)
n2
(b)
2n
(c)
n (n + 1)
(d)
2n2
( )
The range of intermolecular force is:

(a)
infinite
(c)
10 A
(b)
(d)
1 3 A
0
( )
The bonds in silicon crystals are:

(a)
Covalent
(c)
metallic
(b)
(d)
ionic
None of the above
( )
Example of a semiconductor is:

(a)
Al
(c)
Fe
(b)
(d)
Cu
Si
( )
The unit cell with crystallographic dimension, a = b c and

(a)
cubic
(b)
hexagonal
(c)
monoclinic
(d)
tetragonal
The number of fundamental crystal structures are:
(a)
7
(b)
(c)
21
(d)
On heating resistance of conductor:
(a)
increase
(b)
(c)
does not change
(d)
is:
( )
14
28
( )
decreases
becomes zero
Bonds in semiconductor are:

(a)
Covalent
(c)
Metallic
(b)
(d)
Ionic
neutral
( )
Band gap in Ge and Si lies in range:

(a)
0.5 1.5 eV
(c)
2.5 3.5 eV
(b)
(d)
1.5 2.5 eV
3.5 4.5 eV
( )
28.
29
In intrinsic semiconductors:
(a)
nh < ne
(c)
nh = ne
(b)
(d)
nh > ne
nh = ne = 0
The unit of resistance is:

(a)
Mho
(b)
Ohm
(d)
Ampere
(c)
S.No.
Ans
S.No.
Ans
S.No.
Ans
15
Farad
Q:01
D
Q:10
B
Q:19
D
02
B
11
C
20
B
03
B
12
A
21
A
04
A
13
A
22
D
05
D
14
C
23
B
06
B
15
B
24
A
( )
07
A
16
C
25
C
08
C
17
B
26
A
09
C
18
B
27
B
16
Chapter-2
Transport Phenomena in Semiconductor

Q.1
Write down the relation between Drift Velocity and Current Density.
Ans.: Current Density : The electric current passing normally through a units area of
the metal wire is called Current Density (J).
I
J
A
As shown in figure, let a potential
difference V is applied between the
ends of the wire of length L and
cross section area A.
If number of free electrons per unit volume in wire are n then total number of
electrons passing through unit area of the wire in time t seconds will be (nAV dt)
and flow of charge will be Q qnAVd t
Where q Charge of an electron
qnAVd t
t
Q
t
qnAVd
Current Density J
J
Q.2
I
A
qnVd
What is Intrinsic Semiconductor? Give examples of Intrinsic Semiconductors?

What are the charge carriers in them?
17
Ans.: Intrinsic Semiconductor : When a semi conducting material is pure and in its
natural from it is called Intrinsic Semiconductor. The examples of Intrinsic
Semiconductors are Germanium (Ge)
and
Silicon (Si).
Crystal Structure : Both Silicon and
Germanium has four valance
electrons. For stability every atom
shares one electron from the
neighboring four atoms to complete
the
valance orbit. Thus the valance
electrons of each atom form covalent
band
with one electron of each of its four neighbors. The crystal structure of both
Silicon and Germanium is diamond structure in which the bands form a
tetrahedron.
Charge Carriers : At absolute zero temperature, all semiconductor behaves as
insulator and no charge carrier exist. As the temperature increases, some electron
from valance band, reach the conduction band after crossing the forbidden
energy gap. Due to this a vacant site is created is valance band is called a Hole.
Thus free electrons and holes are created in pairs simultaneously. Therefore in
intrinsic semiconductors both electrons and holes are the charge carriers.
Q.3
What are Extrinsic Semiconductor? Explain the construction of N and P-Types

Semiconductors with necessary diagrams.
Ans. Extrinsic Semiconductor : The conducing of Intrinsic Semiconductor is low.

When semi conducting material Germanium and Silicon are doped with a
controlled amount of an impurity element, the conductivity increases. The
semiconductors so obtained are called Extrinsic Semiconductors.
Extrinsic Semiconductors are of two types :
(i)
N-Type Semiconductor
(ii)
P-Type Semiconductor
N-Type Semiconductors : If an element of fifth group as arsenic or antimony is

added to Germanium or Silicon whose valancy is four, the semiconductor
obtained is called N-Type Semiconductor.
18
As shown in fig.(1), when a pentavalent

impurity atom replaces a tetravalent atom
Germanium or Silicon, four valance
electrons of the impurity
atom form
covalent band respectively with one
electron of each of the neighboring atoms,
the fifth electron remains almost free. Thus
atom of the impurity element of fifth group
contributes one free electron as a charge
and due to this property fifth group
impurity is called Donor Impurity.
of
while
every
carrier
The energy level of the valance electron of the

pentavalent element lies in forbidden energy gap of
the intrinsic semiconductors just below the
conduction band. This energy level is called Donor
Level.
In N-Type Semiconductors, electrons are majority charge carries.
P-Type Semiconductor : This type of

semiconductor is formed when third
group
element like boron is added as impurity
in Ge
or Si material. Due to adding of trivalent
impurity, three valance electrons of
impurity atom form covalent bands
respectively with one electron of each of
the
three neighboring atoms but the band of
the
fourth atom remains incomplete and a
deficiency of electron exists there. This
vacancy is called Hole. Hole has ability to capture available electron there on the
impurity of third group is called Acceptor Impurity.
19
In P-Type Semiconductor, acceptor level lies slightly above the valance band of
semiconductor. Holes are the majority charge carries in P-Type Semiconductor.
Q.4
Derive the expression of conductivity of an Intrinsic Semiconductor in terms

of mobility.
Ans.: In Intrinsic Semiconductors, both electrons and holes are the energy charge
carries.
When a battery is connected between the two ends of a semi-conducting
material, both electrons and holes move
in
definite direction.
The drift velocity of both electrons and
is proportional to intensity of applied
electric field. i.e.
And
Vn E
Vn
Vp E
Vp
Here
&
holes,
E
E
are mobilities of electrons and holes respectively.
If current density of electrons is Jn and of holes is Jp then total current density is

an intrinsic semiconductor is
J = Jn + JP
But we know that
Current Density = Number Density of Charge Carriers X Charge X Drift Velocity
Jn = nqVn = nnqE
And
Jp = nqVp = ppqE
J = Jn + Jp
OR
J = qE (nn + pp ) amp/m2
The electrical conductivity of the semiconductor
20
J
E
Q.5
q (nn + pp ) mho/m.
Derive of the expression of conductivity on N and P Types of Semiconductors.
Ans.: We have derived the expression for current density in a semiconductor in last
question and got
J = q (nn + pp ) E
And therefore conductivity
J
q (nn + pp ) mho/m
E
For N-Type Semiconductors
n = ND
Where ND is the number density of donor impurities
Further, n >> p
Therefore,
= q NDn
For P-Type Semiconductors

p NA
Where NA is number density of acceptor impurities
Further, P>>n
Therefore, q Na p
Thus is Extrinsic Semiconductors the conductivity depends on the number
density of donor or acceptor impurity atoms.
Q.6
Explain of formation of depletion larger in P-N Junction Semiconductor.
Ans.: In
a
P-N
Junction,
P-type
semiconductor material is joined to Ntype material in atomic sense. The Pmaterial has a large hole density
while the N- material has a large free
electron density. In this way at the
21
junction a gradient of density of charge carriers developed. Due to this, the holes
diffuse from P-side to N-side while electrons diffuse from N-side to P-side.
This process of diffusion affects only a narrow region near the junction between
X1 and X2.
Due to the diffusion of electrons from N to P-side and holes from P to N-side, in
a thin layer at the junction the holes capture the electrons and the charge carriers
no longer remain free. This region of the junction thus depleted of free charge a
carriers and the larger so formed is called Depletion Layer.

1
7.
For producing a p-type semiconductor which of these would used:

(a)
Acceptor atoms
(b)
Donar atoms
(c)
Pentavalent impurity
(d)
Arsenic
( )
The merging of a free electron with a hole is called:

(a)
decomposition
(b)
recombination
(c)
neutralization
(d)
covalent bonding
( )
Free electron exits in:

(a)
First band
(c)
Valence band
(b)
(d)
Forbidden band
Conduction band
( )
Depletion layer has:

(a)
Both free electrons and holes
(c)
Only free electrons
(b)
(d)
None of the free charge carriers

Only free holes
( )
A P-N junction in reverse bias acts as a:

(a)
Very high resistance
(b)
Very low resistance
(c)
Zero resistance
(d)
None of the above
Current in a semi-conductor diode is due to the drift of:
(a)
Free electrons
(b)
Free electrons and holes
(c)
Positive and negative ions
(d)
Protons
In n-type semiconductor the fermi energy level is displaced:
(a)
towards the valence band
( )
( )
22
(b)
(c)
(d)
8
10
11
12
13
14
towards the conduction band

not displace d
and depend on quantity of impurity
( )
The electronic configuration of Si is:

(a)
1s2, 2s2, 2p6, 3s2, 3p4
(b)
1s2, 2s2, 2p6, 3s1, 3p3
(c)
1s2, 2s2, 2p6, 3S2, 3p2
(d)
1s2, 2s2, 2p6, 3s0, 3p4
The depletion region of a-p-n junction contains:

(a)
Electrons only
(b)
A rectifier
(c)
Electrons and holes
(d)
Neither electrons nor holes
A p-n junction can be used as:
(a)
An amplifier
(c)
An oscillator
(b)
(d)
( )
( )
A rectifier
A modulator
( )
Depletion layer increases:

(a)
When p-n junction is formed
(b)
On applying forward bias
(c)
On applying the reverse bias
(d)
When temperature is decreases
( )
The number of free electrons and holes in an intrinsic semiconductor increase when
the temperature:
(a)
Decreases
(b)
Increases
(c)
Stays the same
(d)
None of the above
( )
(a)
1s2, 2s2, 2p6, 3s2, 3p4
(b)
1s2, 2s2, 2p6, 3s2, 3p2
(c)
1s2, 2s2, 2p6, 3S1, 3p3
(d)
1s2, 2s2, 2p6, 3s0, 3p4
To make an n-type material, following is added to Ge:

(a)
Al
(b)
B
(c)
P
(d)
In
( )
( )
23
15
The energy needed to detach the fifth valence electron from the Antimony (Sb)
impurity atom surrounded by Ge atoms is approximately:
(a)
0.001 eV
(b)
0.01 eV
(c)
0.1 eV
(d)
1.0 eV
( )
16
In an N-type semiconductor, the position of Fermi level:

(a)
Is lower than the centre of energy gap
(b)
Is at the centre of the energy gap
(c)
Is higher than the centre of energy gap
(d)
Can be anywhere in energy gap depending upon the
17.
18
19
20
21
S.NO.
Ans
S.NO.
Ans
S.NO.
Ans
concentration of impurity atoms

The resistivity of a semiconductor at Ok is:
(a)
Zero
(b)
(c)
105
(d)
Infinite
None of the above
( )
The unit of current density is:

(a)
C/m2
(c)
Ampere/m2
C/m3
Ampere/m3
( )
(b)
(d)
( )

(a)
Neutralization
(b)
Decomposition
(c)
Recombination
(d)
None of the above
The example of intrinsic semiconductor is:
(a)
Ge
(c)
Sb
Cut in voltage of Si diode is of the order of:
(a)
0.2 V
(c)
0.2 mV
Q:01
A
10
B
Q:19
C
02
B
11
C
20
A
03
D
12
B
21
B
04
B
13
B
05
A
14
C
( )
(b)
(d)
Ca
Ag
( )
(b)
(d)
0.6 mV
0.6 V
( )
06
B
15
B
07
B
16
C
08
C
17
B
09
C
18
C
24
Chapter-3
Semiconductor Diodes
Q.1
What is a P-N Junction Diode?
Ans.: P-N Junction : When a P-type semi conducting material is joined to a N-type
material is the atomic sense, the device is called P-N junction. During the
formation of a P-N Junction a potential barrier is developed at the junction. This
potential barrier abstracts the flow of free charge carriers (electrons & holes). PN
junction has a special feature that it allows the flow of current easily in one
direction but obstruct the flow of current in opposite direction. Thus P-N
Junction acts as a rectifier diode therefore this device is called P-N junction
Diode.
Q.2
Explain the working of P-N Junction Diode. Discuss its Forward and Reverse
Bias.
Ans.: Working of P-N Junction Diode : P-N Junction diode has a very special feature
that it allows the flow of current only in our direction and obstruct the flow of
current ins other direction so this device is used in rectifies circuits.
Forward Biasing of a P-N Junction Diode :
P-N junction, If P-terminal is joined to
positive terminal of battery and N-terminal
negative terminal then the diode is said to
Forward Biased.
to
be
By a Forward Bias, the height of the

potential barrier at the junction is reduced because the field applied by the
external source at the depletion larger is opposite to the field present there due to
the potential barrier.
25
In Forward Bias, current flows in the circuit from

P-region to N-region of the diode; By increasing
the biasing voltage current increase exponentially
the dynamic resistance offered by the P-N
junction is very low of the order of 100 ohm.
Reverse Bias : If the P-terminal of P-N junction is
connected to negative terminal of the battery and N-terminal of the diode to
positive terminal of the battery, the applied bias is called Reverse Bias.
In Reverse Bias, the height of potential
barrier as well as the thickness of depletion
layer
is increased. Thus the availability of free
charge carriers is reduced and their flow is
obstructed by the barrier the current in this
state
is almost zero only a small current in
microamperes flow due to the thermally generated holes in a N-material and free
electrons in P-region.
In Reverse Bias, state the dynamic resistance of PN Junction diode is very large (106 ohms) Thus PN Junction allows current to flow easily in
forward bias state and obstructs the flow of
current in reveal bias state.
26
Q.3
Give circuit diagrams to obtain characteristic curves of a P-N Junction Diode.
Ans.:
The
circuit
of
Forward Biasing
P-N
Junction
Diode
The
circuit
of
Biasing of a P-N
Diode
Volt-Ampere
Characteristics of a
Junction Diode
of
Reverse
Junction
P-N
Q.4
27
Explain the phenomena of Avalanche Breakdown and of Zener Breakdown.
Ans. Avalanche Breakdown : This breakdown takes place due to strong electric field
in depletion layer. Due to this, there is a direct rupture of covalent bands and
electron-hole pairs so generated acquire a large amount of kinetic energy from
this field and collide with immobile ions, thereby generating further electronhole pairs. This process is cumulative in nature and results in avalanche of
charge carriers in very short time. This mechanism is called Avalanche
Multiplication.
Zener Breakdown : When P and N regions are heavily doped, the change charge
carrier density at the junction is abrupt and depletion layer of very thin width is
formed. The charge carriers of opposite nature are concentrated on both sides of
this layer. Due to this, strong electric field is generated is the depletion layer due
to its very small width even at nearly zero bias.
When diode is reverse biased, field across depletion layer becomes very high. In
this state the valance band of P-region comes in front of conduction band of Nregion and the electrons start flowing from valance band of P-region to
conduction band of N-region by tunnel effect due to strong electric field. This
type of breakdown is called Zener Breakdown.
Q.5
Explain the working of Zener Diode. How is it used for the Voltage
Stabilization?
Ans.: In reverse bias state, when applied voltage exceeds a certain limit, the current
through the P-N diode increases abruptly. This reverse voltage at which current
increases sharply, is called Zener Voltage. The ordinary diode may got damaged.
But zener diode is made to work in this breakdown region.
Symbol of Zener Diode

To obtain constant DC Voltage, regulated power supply is used. Zener diode is
used in many different type of Voltage Regulators for Voltage Stabilization.
28
Example : In Transistor, Shunt Regulator, Transistor Series Regulator, Zener

Diode Shunt Regulator.
Zener Diode Shunt Regulator :
As shown in circuit diagram Vi = VZ + RS I
or
VZ = Vi RS I _ _ _ _ (1)
and current
diode will be
IZ = I IL
through
zener
_ _ _ _ _ (2)
We know that variation in input voltage Vi and load current IL makes output
voltage unregulated.
When a zener diode is connected in parallel with load RL, then zener diode keeps
the output voltage constant is all conditions for example, If voltage variation DC
takes place at any instant in the input voltage Vi. Let it changes the current by an
amount dI. This current variation simultaneously changes the current through
zener with the same amount, but the load current IL remains constant and thus
voltage across load remains equal to zener voltage Vz. Similarly if the load
current changes, the zener current increases or decreases to keep the current
through RS. Constant as seen from equation (1).
Q.6
Explain the principle of Varacter Diode.
Ans.: Varacter Diodes: The varacter is a reverse biased diode having a useful property
that the diodes in reverse bias state that the diodes in reverse bias state acts as a
capacitor whose capacitance varies with the applied reverse voltage.
The width of depletion layer increases with
reverse voltage. In this state P and N region
the diode are like the plates of the capacitor
the depletion layer is like the dielectric. We
know that capacitance is inversely
Circuit Symbol
the
of
and
29
proportional to the distance between the plates. Consequently larger the reverse
voltage, the larger is the width of depletion layer and hence the smaller the
capacitance. It means that the barrier capacitance is controlled by the reverse
voltage.
The varacter diode is widely used in FM
Radio, TV receiver etc.
Characteristic Curve
of Varacter Diode
Q.7
Explain the principle and working of Photodiode.
Ans.: Photodiode : It is a light a sensitive device which converts light signals into
electrical signals. It is a special type of diode which operates in reverse bias.
Construction
of
Photodiode
:
Photodiode is made of a
semiconductor
P-N
diode kept in a sealed
opaque plastic of glass
casing. It has a small
transparent
window
through which light falls
junction.
at
Working of Photodiode : When light falls or junction of PN diode, electron-hole

pairs are generated in the semiconductor material. Due to movement of these
pairs, current flow in reverse bias. The magnitude of current depends on the
intensity of light. Higher the intensity of light IL, higher is the reverse current that
flows through the circuit.
Use of Photodiode : Photodiode is generally used in photo-detection devices,
logic circuits etc.
Q.8
Explain working of Light Emitting Diode. Mention its applications.
Ans.: Light Emitting Diode (LED) : P-N junction diode emits light when it is forward
biased. Such type of diode is called Light Emitting Diode.
30
These diodes are made from Gallium Phosphide (Ga) Materia or Gallium
Arsenide Phosphide (GaAsP) material.
The amount of light emitted by the diode is directly proportional to the forward
current i.e. higher the forward current, higher is the intensity of light emitted.
When
LED
is
forward biased, the
electrons from N
region and holes
from
P
region
move
towards the junction
and
recombine. In this process the electrons lying in the conduction band of N-region
fall into the holes in the valance band of P region. As a result energy of electrons
decreases and the energy equivalent to the difference of energy between the
conduction band and valance band is radiated in the form of light in LED.
Q.9
Describe the construction and circuit symbol of a Photovoltaic Cell.
Ans.: Photovoltaic Cell : If the Potential difference is generated between the ends of
the semiconductor material due to light radiator fall on it, then this effect is
called photovoltaic effect and semiconductor device using this effect is called
Photovoltaic Cell. The generated potential difference depends upon the intensity
of light and the load. A Photovoltaic Cell consists of semiconductor material
such as silicon, germanium etc. which is joined with the metal plate as shown in
fig. below :
31
1 A P-N junction in reverse bias acts as a:

(a)
(c)
Zero resistance
2
(b)
(d)
The characteristic curve of a P-N junction diode:
( )
3
Symbol of P-N junction diode is:
4.
( )
The varactor diode is used as:
Very low resistance

None of the above
( )
32
(a)
(c)
5
10
11.
12.
13
(b)
(d)
Regulator
Switching circuits
The color of light emitted by a LED depends upon:

(a)
its reverse bias
(b)
its forward bias
(c)
the amount of forward current
(d)
the type of semiconductor material used
( )
( )
Zener diode is used as:

(a)
Amplifier
(b)
Oscillator
(c)
Regulator
(d)
Rectifier
( )
The ratio of the resistance of a-p-n junction diode under forward biased and reverse
biased condition is:
(a)
102 :1
(b)
102 :1
(c)
Rectifier
Oscillator
1 : 104
(d)
1 : 104
The voltage where the avalanche occurs is called the:

(a)
Barrier potential
(b)
Peek voltage
(c)
Knee voltage
(d)
Breakdown voltage
In LED, blue light is emitted by:
(a)
GaAs
(b)
GaP
(c)
GaAsP
(d)
GaN
Zener diode used in circuit is always biased:
(a)
forward
(b)
reverse
(c)
zero
(d)
none of the above
Zener diode is:
(a)
Rectifier diode
(c)
constant voltage device
(b)
(d)
constant current device

forward biased diode
Zener diode is used is:

(a)
amplifier
(b)
oscillator
(c)
regulator
(d)
rectifier
For highly doped diode:
(a)
Zener break down is likely to take place
(c)
Avalanche break down is likely to take place
(c)
Either will take place
(c)
Neither will take place
( )
( )
( )
( )
( )
( )
( )
14
Zener diode is generally operated:

(a)
In forward bias
(c)
In zero bias
(b)
(d)
33
In reverse bias
Both in same bias
( )
S.NO.
Ans
Q:01
02
03
04
05
06
07
08
09
S.NO.
10
11
12
13
14
Ans
34
Chapter-4
Rectification & Power Supply

Q.1
Define Rectification and Rectifier. What are the types of Rectifier?
Ans.: Rectification : Rectification is the process by which alternating voltage is

converted into direct voltage.
Rectifier : The electrical device which rectifies an alternating voltage is called a
Rectifier. In a rectifier the characteristic property of a diode of unidirectional
conduction is used by which a low resistance is offered to the flow current in on
direction and a high resistance is offered for flow in opposite direction.
Rectifiers are mainly of two types :
(i)
Half Wave Rectifier : In which only one diode is used and only half of the
cycle of input alternating voltage is used.
(ii)
Full Wave Rectifier : In which the full wave of the input alternating
voltage is used.
Q.2
Describe working of Half Wave Rectifier with the help of circuit diagram.
Ans.: Half Wave Rectifier :
35
As shown in figure, in Half Wave Rectifier, the source of alternating voltage is

connected to primary coil of a transformer and the secondary coil to a diode D
and load resistance in series.
Suppose voltage on transformer is Vi = Ep sin t the voltage induced in
secondary is
Vs = n Ep Sin t = Em sin t, where n ratio of turns in
secondary and primary coil.
For positive half cycle of Vi, the end A of secondary coil is at positive voltage and
B at negative voltage. In this state, diode is forward biased and current i flow in
the circuit. During other half cycle, A is at negative voltage and end B is at
positive voltage. In this state P-N diode is reverse biased and no current slows.
Thus thorough the load RL connected in the output circuit current flows only for
half cycle of the cycle of input voltage Vi.
The output voltage is always positive (unidirectional) but varies with time i.e.,
the output voltage is pulsating.
Q.3
Determine following quantities in Full Wave Rectifier :

(i)
Average Value of Pulsating Current
(ii)
Efficiency
(iii) Ripple Factor
Ans.: Full Wave Rectifier :

(i)
Average Value of Pulsating Current :

Idc =
1
T
idt
0
36
OR
Idc
i1dt +
i2 dt
T /2
T /2
1
=
T
I m sin t dt +
T /2
Cos t
Cos t
Im
t
cos t
Im
2
Cos
Idc =
( I m )sin t dt
T /2
I
= m
T
(ii)
T /2
1
=
T
T /2
0
T /2
cos t
T
T /2
2 T
.
Cos0
T 2
2Im
Cos
2
2 T
.T Cos
.
T
T 2
2
T
Efficiency :
Rectification Efficiency of Full Wave Rectifier
Output DC Power of Full Wave Rectifier Pdc
Input AC Power of Full Wave Rectifier Pac
Output DC Power
Input AC Power
I dc 2 RL
4Im2
I rms 2 ( R RL )
Pdc
Pac
RL
Im2
( R RL )
2
4 I m 2 RL
2
Efficiency
I m ( R RL )
2
Percentage Efficiency
8RL
( R RL )
0.812
R
1
RL
81.2
%
R
1
RL
Maximum Efficiency of Full Wave Rectifier will be 81.2% when R < < RL.
(iii)
37
Ripple Factor : The alternating variation present in the output of Full

Wave Rectifier is called Ripple. It is measured by a constant called Ripple
Factor.
Ripple Factor r
OR
The effective valueof ac component in output

The dc component in output
I rms 2
1
I dc 2
I ac
I dc
1/2
Substituting the value of Irms and Idc for a Full Wave Rectifier
r
2
Im2
.
1
2 4I m2
1/2
1/2
r = 0.482
r =48.2%
Q.4
Draw the circuit diagram of a Bridge Rectifier and explain its working.
Ans.: Bridge Rectifier :
As shown in figure Bridge Rectifier consists of four diodes D1, D2, D3 & D4 which
are connected to form a network just like wheat stone bridge.
38
Working of Bridge Rectifier : When AC voltage Vi = Ep sin t is applied across

the ends of the primary coil of transformer then Vs = nEp sin t is induced
between the ends E and F of its secondary coil. During the half cycle of Input
voltage when E is positive with respect to Point F, diodes D1 & D3 are forward
biased and D2 & D4 are reverse biased. Consequently a current slows through the
diodes D1, & D3. During Next half cycle, diode D2 & D4 conduct and current
flows only through then. Thus it is clear that for both half cycles the currents
flows through RC in one direction only.
Q.5
What are Filters? Describe the working of Shunt Capacitor Filter.
Ans.: Filter : Filter is an electric circuit used for smoothing output current i.e. to
separate the AC component from the pulsating output current of the rectifier. It
is made by combining inductors and capacitors.
Shunt Capacitor Filter :
In this type of filter, a capacitor C is connected is parallel with the load resistance
RL. Filtration of AC component from diode output voltage depends upon the
energy storage capacity of the capacitor C. When diode (Suppose D1) output
voltage increases (Say from t1 to t2 as shown in figure) the capacitor stores energy
by charging to the peak B of the corresponding Input cycle upto time t 2. Beyond
t2 when input voltage decreases from its peak value, the diode D1 disconnects
from the source and load. So it stops conducting and capacitor starts discharging
energy thorough the load RL.
In the next half cycle of Input, this process takes place through diode D 2. The
process continues for other cycles and the rectifier with capacitor filter gives the
wave form of the output voltage like ABCD curve shown in figure.
Q.6
39
Explain the working of Series Inductor Filter.
Ans.: Series Inductor Filter : The ripple in the rectifier output can be reduced by
connecting high independence inductor L in series with lead Resistance RL.
Working of Series Inductor Filter : When diode output current tends to rise
above the average value, of the inductor L stores energy in due to rise in the
current in the form of magnetic energy and offers impedance to AC component
and no resistance to DC component. Thus AC component is blocked and only
DC component reaches at the load. When the load current decreases below
average, it develops additional only in the inductor due to outflow of magnetic
energy and resists the decrement of the output load current. In this way the
fluctuation in the output current decreases by the inductor L.
Q.7
Sketch block diagram of SMPS.
Ans.: SMPS :
Block Diagram of Switching Mode Power Supply
40
Multiple Choice Questions

Q:1 Which rectifier requires four diodes?
(a)
Half-wave rectifier
(c)
Full-wave rectifier
2
(b)
(d)
Bridge rectifier
All of the above
( )
Output wave of full-wave rectifier given:
( )
3
The efficiency of a half-wave rectifier is:

(a)
50%
(c)
40%
(b)
(d)
81%
100%
( )
The current obtained from a rectifier without filter is:

(a)
Varying d.c.
(b)
Constant d.c.
(c)
Pulsating d.c.
(d)
d.c. mixed with a.c.
( )
The filter circuit which has better voltage regulation is:

(a)
Choke input filter
(b)
-filter
(c)
Capacitor filter
(d)
LC filter
( )
41
6.
The output of a half-wave rectifier is suitable only for:

(a)
Charging batteries
(b)
Running a.c. motors
(c)
Running car radios
(d)
Running TV
The output voltage for a half wave rectifier is:
(a)
Pure AC
(b)
Pure DC
(c)
Pulsating
(d)
None of the above
( )
( )
A full wave rectifier is connected with an AC source of frequency 50 Hz. The output
current contains a ripple of what frequency?
(a)
25 Hz
(b)
50 Hz
(c)
100 Hz
(d)
60 Hz
( )
Which of the following V-I graphs is correct for a p-n junction?

(a)
(b)
I
v
(c)
(d)
I
S.NO.
Q:01
02
03
04
05
06
07
08
Ans
09
42
Chapter-5
Bipolar Junction - Transistor

Q.1
What is Transistors? Draw notations for PNP and NPN Transistors.
Ans.: Transistor : When a third doped element is added to semiconductor diode in

such a way that
two P-N Junctions are formed, the resulting device is known
so Transistor.
Transistor is small in size and very light in weight. It needs a very low voltage
source and has longer life.
There are two types of Transistor :
(i)
PNP Transistor
(ii)
Q.2
43
NPN Transistor
Explain different types of Transistor Biasing.
Ans.: The connection of correct polarity of voltage across its two junctions for proper
working of transistor its known as Transistor Biasing. There are three ways of
biasing transistor :
(i)
Forward Active : In this biasing, emitter base junction is made forward

biased and collector base junction is reverse biased. This biasing is called
Forward Ative and generally used in Amplification.
(ii)
Saturation : IN this biasing, both emitter base junction and collector base
junction are forward biased. In this mode the transistor has very large
current to flow and used as a closed switch.
44
(iii)
Q.3
Cut Off : In this biasing both junction are reversed biased and transistor
has practically no current to flow and used as open switch.
Discuss sign convention and signs of various voltage and current in a Junction
Transistor.
Ans.: Sign Conventions for Voltages and Currents in Transistor : In Junction

Transistor one of its terminal for input and output circuits.
Sign Convention for Current : Normally, current flowing into a Junction
Transistor is taken positive where as current flowing out of it is takes as
negative.
Sign Convention for Voltages : The voltage is taken as positive when terminals
symbol of transistor used as first subscript in symbol indicating voltage is
positive with respect to terminals symbol of transistor used as second subscript
in voltages symbol.
Q.4
45
In NPN
In PNP
VEB
VCB
VCE
What do you understand from Junction Transistor Configurations and

Characteristic Curves.
Ans.: In Junction Transistor, all the electrical quantities at the output are in general
controlled by the electrical quantities at the Input. The four electrical quantities
related with input and output are :
a.
Input Current
b.
Input Voltage
c.
Output Current
d.
Output Voltage
The dependence of these quantities on one another is represented by different

curves called Characteristic Curves.
There are three basic configuration of Transistor :
Q.5
(i)
Common Base Configuration
(ii)
Common Emitter Configuration
(iii)
Common Collector Configuration
Give the circuit diagram of Common Base NPN Transistor and give the
method of plotting input and output characteristics.
Ans.: Common Base Configuration : In this configuration base terminal is common in

input and output circuits. To represent the behaviour of NPN Transistor in this
configuration two sets of Characteristic Curves are drawn :
46
(i)
(ii)
Input Characteristics : In this

configuration IE is input
current and VEB is input
voltage. IC is output current
VCB is output voltage. Keeping
constant, the graph between IE
VEB
are
called
Input
Characteristics.
Output Characteristics : In
common base configuration, Ic
output current and VCB is
output voltage.
Collector Current IC is a function of IE and VCB i.e.
Ic =
(VCB, IE)
and
VCB
and
is
47
Keeping IE constant the set of waves drawn between IC and VCB are called
Output Characteristics. The output characteristics of transistor in CB
configuration may be divided into three region of operation :
Q.6
(i)
Active
(ii)
Saturation
(iii)
Cutoff
What do you understand from and of Transistor. Establish relation

between them.
Ans.: Current Amplification Factor () : In common base configuration, this is defined

as the ratio of collector current IC and emitter current IE keeping VCB constant.
IC
IE
Current Amplification Factor () : In common emitter configuration, the ratio of
IC and IB for constant VCE is called DC Current Gain and given as
IC
IB
VCE
Cons tan t
Relation between and :

For Junction Transistor, we know that
IE = IB + IC
_ _ _ _ _ (i)
Dividing this equation by the IC, we get

=
IB
+1
IC
+1
_ _ _ _ _ (ii)
48
_ _ _ _ _ (iii)
Equation (ii) can be written as

1
1
1
Q.7
-1
_ _ _ _ _ (iv)
Describe Hybrid Parameters of a Transistor.
Ans.: Hybrid Parameters of Transistor : To stand a four terminal network two

variables are taken as independent variables while two are taken as dependent
variables. In transistor Input current I1 and output voltage V2 control the
behaviour of internal circuit so there are taken as independent variables and
remaining the two are dependant variables.
V1 = f (I1, V2)
_ _ _ _ _ (i)
I2 = f ( I1 , V2)
_ _ _ _ _ (ii)
On taking total differentials

dV1 =
V1
dI1 +
I1
And
dI1 =
I2
I2
dI1 +
dv2
I1
V2
OR
V1 = h11 I1 + h12 V2
_ _ _ _ _ (v)
I2 = h21 I1 + h22 v2
_ _ _ _ _ (vi)
V1
dV2
V2
_ _ _ _ _ (iii)
_ _ _ _ _ (iv)
49
Here coefficient h11, h12, h21 & h22 are of different dimension so they are referred
as hybrid parameters.
hi = h11 =
V1
I1
Short circuited input impedance when V2 =0 its unit is

ohm.
hr = h12 =
V1
V2
Open circuited reverse voltage ratio when I1 =0 it

dimension less parameter.
hf = h21 =
I2
I1
Short circuited forward current gain when V2 =0 it is

dimension less parameter.
H0 = h22 =
I2
V2
Open circuited output admittance when I1 =0 its unit

is mho.
50

Q:1 In transistor, the relation among emitter current I g , base current I B and Collector
Current I B is:
3.
4.
5.
6.
8.
(a)
Ic
IE
IB
(b)
IE
IB
IC
(c)
IE
IB
IC
(d)
IE
IC
IB
In a transistor leakage current mainly depends on:

(a)
Temperature
(b)
(c)
Size of emitter
(d)
Doping of base
Rating of transistor
( )
Transistor is known as bipolar transistor because it has:

(a)
Electrons
(b)
Holes
(c)
Electrons and holes
(d)
None of the above
( )
In NPN or PNP transistor:

Ic I E
(a)
Ic I E
(c)
( )
(b)
Ic
IE
(d)
None of the above
Which of the following transistor amplifiers has the highest power gain?
(a)
Common base
(b)
Common emitter
(c)
Emitter follower
(d)
Common collector
( )
The voltage gain of a common base amplifier is:

(a)
Zero
(b)
(c)
Unity
d)
In N-P-N transistor both emitter and collector
transistor will operate in:
(a)
Active region
(b)
(c)
Cut-off region
(d)
Saturation region
Inverted region
( )
Faraday
Schockley
( )
Who invented the first junction transistor?

(a)
Bell
(c)
Marconi
(b)
(d)
Less than unity

Greater than unity
( )
junctions are forward biased. The
10.
11.
12
13
The current amplification factor in common collector configuration as:

(a)
(b)
(c)
(d)
( )
The base of an n-p-n transistor is thin and:

(a)
Heavily doped
(b)
Lightly doped
(c)
Marconi
(d)
Doped by pentavalent material
( )
I bell is equal to:

(a)
1 db
(c)
100 db
(b)
(d)
10 db
1000 db
In a transistor the value of a is 100, the value of is:

(a)
0.01
(b)
0.1
(c)
0.99
(d)
1
The common-emitter gain ( ) of a transistor is defined as:
(a)
(b)
(c)
(d)
14
Figure represents a:
(a) PNP transistor
(b) NPN transistor
(c) Unipolar transistor
(d) None of the above
15.
In case of a bipolar transistor, is:

(a)
+ve and greater than one
(b)
+ve and less than one
(c)
-ve and less than one
(d)
None of the above
16.
51
The relation between

(a)
and
None of the above
( )
( )
( )
( )
is given by:
(b)
52
(c)
17.
18
19.
20.
21.
22
23
24
25.
(d)
None of the above
( )

(a)
Temperature
(b)
(c)
Size
(d)
Doping
None of the above
( )
The smallest part of a transistor is:

(a)
Emitter
(c)
Collector
(b)
(d)
Base
None of the above
( )
The unit of impedance is given by:

(a)
Ampere
(c)
Volt
(b)
(d)
Ohm
None of the above
( )
The current gain of CC amplifier is:

(a)
Zero
(c)
Unity
(b)
(d)
Greater than unity

Less than unity
( )
The decibel is a measure of:

(a)
Power ration
(c)
Current ratio
(b)
(d)
Voltage ratio
None of the above
( )
In a Cc amplifier voltage gain:

(a)
Remains constant
(b)
Equal to one
(c)
Is independent of input
(d)
Depends on output
For a n-p-n transistor the collector voltage is:
(a)
ve
(b)
(c)
O
(d)
+ve
a.c. voltage
( )
Highly doped region in a transistor is:

(a)
Emitter
(c)
Base
(b)
(d)
Collector
All are equally doped
( )
Thinnest region in a transistor is:

(a)
Emitter
(c)
Both of the above
(b)
(d)
Base
All of the above
( )
( )
26
27
S.NO.
Ans
S.NO
Ans
S.NO
Ans
53
Transistor is a:
(a)
Voltage operated device
(c)
Both of the above
(b)
(d)
Current operated device

None of the above
( )
Transistor can be used as:

(a)
Switch
(c)
Oscillator
(b)
(d)
Amp lifer
All of the above
( )
Q:01
B
Q 10
B
Q 19
B
02
B
11
C
20
B
03
C
12
C
21
A
04
B
13
A
22
B
05
A
14
B
23
B
06
D
15
A
24
B
07
B
16
B
25
A
08
A
17
B
26
B
09
C
18
B
27
B
54
Chapter-6
Amplifiers and Oscillators

Q.1
Explain how a Transistor works as an Amplifier?
Ans.: A Transistor raises the strength of a weak signal and thus acts as an Amplifier.
The weak signal

is applied between
emitter base junction and output is taken across the load R L connected in the
collector circuit. In order to achieve faithful amplification, emitter base junction
should always remain forward biased. To do so, a DC voltage EE is applied in
the input circuit in addition to the signal.
As the Input circuit has low resistance c being forward biased), a small change in
signal voltage causes an appreciable change in emitter current. This almost
causes same change in collector current due to transistor action. The collector
current flowing through load resistance RL produces large voltage across it.
Thus, a weak signal applied in the input circuit appears in the amplified form in
the collector circuit. It is in this way that a transistor acts as an amplifier.
Q.2
55
Draw circuit diagrams for Transistor Amplifier Circuits in different

configuration.
Ans.: (1)
Common Emitter Amplifier :
(2)
Common Base Amplifier :
(3)
Common Collector Amplifier :
56
Q.3
Describe R-C Coupled Transistor Amplifier.
Ans.: This amplifier is usually employed for voltage amplification, in this, a coupling
capacitor Cc is used its connect the output of first stage to the base (i.e. input) of
second stage and so on. As the coupling from Due stage to next stage is achieved
by a coupling capacitor followed by a connection to a shunt resistor, therefore,
such amplifiers are called resistance capacitance coupled amplifiers.
CC
OUTPUT
CE
As shown in fig. R1, R2, & RE form the biasing and stabilization network. The
emitter by pass capacitor CE offers low reactance path to signal. The coupling
capacitor Cc transmits ac signal but blocks DC.
Operation : When A.C. signal is applied to the base of first transistor, it appears
in amplified form across its collector load Rc. The amplified signal across Rc is
given to base of next stage through coupling capacitor C c. The second stage does
further amplification o the signal. In this way cascaded stages amplify the signal
and overall gain is considerably increased.
First stage gain G1 =
RAC
Rin
Where RAC = RC11Rin =
RcxRin
Rin input resistance of second stage
RC Rin
Second stage gain G2 =

Total gain G = G1 x G2
RC
Rin
57
The Rc coupled amplifier has excellent audio fidelity one a wide range of
frequency. Therefore it is widely used in voltage amplifiers. The main drawback
of R-C coupled amplifier is that it has poor impedance matching.
Q.3
What do you understand by Feedback? Describe its types.
Ans.: Feedback : Transfer of energy from output of the electric network to its input is
called Feedback, when a fraction of total voltage or current of the output of the
amplifier is fed back to its input, its working efficiency changes.
There are two types of Feedback :
Q.4
Ans.:
(i)
Positive Feedback : When the Input signal and feedback signal have the
same phase, the magnitude of the input signal increases by the addition of
feedback signal. This type of feed is also called Regenerative Feedback.
(ii)
Negative Feedback : When the input signal and the feedback signal have
the opposite phase, the magnitude of the input signal decreases, such type
of feed back is called Negative or Degenerative Feedback.
Prove that for an Amplifier with Feedback.

AF =
A
1 A
As shown in fig., if the resultant

voltage at the input of the amplifiers
Vif = Vi + B1 Vf
{ With Positive Feedback }
If the input voltage Vi is amplified directly by a factor A to the value of the
output voltage then
A =
V0
Vi
. (i)
If Vif is input voltage with feedback and V0 is the output voltage then
A =
V0 '
Vif
58
Vif =
V0 '
..(ii)
A
If the fraction of output voltage V0 is fed in to the input of amplifier then

Vf = V0
Vif = Vi + V0 ..(iii)
Using equation (ii) and (iii), we have
V 01
= Vi + V0
A
V0 =
AVi
1 A
The Amplifier gains with feedback is given by
Q.5
Af =
V0 '
Vi
Af =
A
1 A
Hence proved.
Explain that stability in gain and bandwidth increases due to Negative

Feedback.
Ans.: Gain Stability: We know that

Af =
A
1 A
{ for Negative Feedback }
For Negative Feedback in an Amplifier to be effecting the designer deliberately

makes AB>>1 therefore above relation becomes
Af =
This means that gain now depends upon the feedback fraction B i.e.
characteristics of feed back circuit. As feed back circuit is usually a resistive
network, the gain of the amplifier becomes independent of the ageing of
transistor, variation in supply voltage, temperature and frequency.
Frequency Response : As shown above Af =
59
. This means that voltage gain of
the amplifier is independent of signal frequency. The result is that voltage gains
of the amplifier will be substantially constant over a wide range of signal
frequency. The Negative Feedback, therefore improves frequency response i.e.,
increases bandwidth.
Q.6
Describe Oscillator. Draw the circuit diagram of a general Oscillator.
Ans.: Oscillator : It is an active electronic circuit which produces electrical oscillations

of any desired frequency or we can say it converts energy from DC source into a
periodically varying voltage or current.
Oscillators are self excited active electronic circuits as no external signal is
applied at the input of the oscillators.
An oscillator employs positive feedback for its operation. Whereas negative

feedback tends to reduce the magnitude of the signal applied to the amplifier,
positive feedback has the opposite effect.
Consider the block diagram of Fig.(1), here A is the voltage gain of the amplifier
and m is the feedback fraction. The output voltage is E2 = AE1 where E1 is the
input voltage. Clearly, feedback voltage = m E2 = AmE1. If the link L were
removed and the feedback circuit output connected to the input circuit with +ve
to +ve and ve to ve, the feedback would be positive. This means that feedback
voltage (= A mE1) is in phase with the input voltage. Since E1 is the required
input voltage to produce the output voltage E2, it means that for continuous
60
output (i.e., oscillations), the feedback voltage must be equal to the input voltage
i.e.
Feedback Voltage = E1
Or
A m E1 = E1
Or
Am=1
Under these conditions (i.e., Am=1), even if there were no input generator (i.e.,
E1), a continuous output will be obtained across RL immediately after connecting
the necessary power supplies (i.e, VCC). The general layout of an oscillator is
shown in Fig. 31.2.
It is clear from Fig.(2) that continuous output (E2) will be obtained with no
extremely applied input signal. It provides its own input signal via the feedback
circuit. Thus, output voltage E2 = AE1 and feedback voltage = A mE1 = E1
(because Am = 1).
An amplifier with infinite gain is one that can produce an output signal without
any extremely applied input signal. It provides its own input signal via the
feedback circuit. Such a circuit is known as an oscillator.

1
(a)
Common base
(b)
Common emitter
(c)
Emitter follower
(d)
Common collector
(a)
Zero
(b)
(c)
Unity
d)
An oscillator converts:
(a)
A.C. power into D.C. power
(b)
D.C. power into A.C. power
(c)
Mechanical power into A.C. power
(d)
A.C. power into rediation power
(a)
Remains constant
(b)
Equal to one
Less than unity

Greater than unity
( )
( )
( )
(c)
(d)
5.
8.
.10
61
Depends on output
( )
Ina practical oscillator, A is:

(a)
slightly less than one
(b)
I
(c)
1
(d)
slightly greater than one
(a)
Remains constant
(b)
Equal to one
(c)
(d)
Depends on output
The gain of an amplifier with feedback is given by:
(a)
(b)
(c)
(d)
The value of feedback fraction is:

(a)
(c)
(b)
(d)
( )
( )
( )
( )
The negative feedback increase:

(a)
gain
(b)
bandwidth
(c)
noise
(d)
All of the above
(a)
Af =
(c)
Af =
(b)
Af =
(c)
Af =
( )
( )
S.NO.
Q:01
02
03
04
05
06
07
08
09
Ans
S.NO.
10
Ans
62
Chapter-7
FETs, Thyristors and

Opto-electronic Devices
Q.1
Describe Field Effect Transistor and its types.
Ans.: Field Effect Transistor (FET) : It is a semiconductor device in which flow of

current through semiconductor is controlled by an electric field (voltage) i.e. it is
a field (voltage) controlled device.
FET is a unipolar device i.e. current flow by only one type of majority carrier
electrons or holes.
Types of FET :
FET
JFET
MOSFET
(Junction Field Effect Transistor)
N-channel JFET
(Metal Oxide Semiconductor Field

Effect Transistor)
P-Channel JPET
E-MOSFET
(Enhancement
MOSFET)
Q.2
Describe the construction of JFET.
D-MOSFET
(Deplction
MOSPET)
63
Ans.: JFET : It consists of N or P type semiconductor bar whose ends are heavily
doped with same type impurity.
Types of JFET : JFET is of two types :
N-Channel JFET : If the bar is made from

type semiconductor Then the transistor is
be N-Channel JFET.
N
said to
P-Channel JFET : When bar is made from

JFET.
P-type
In JFET one end of bar is said to be

Source (S). Majority carriers of bar
enter the bar from this terminal.
Another end of bar is said to be drain
majority carriers leave the bar through
terminal. Gate (G) is contracted on
lateral surface of bar by doping heavily
opposite type impurity.
Q.3
State advantages of a JFET over a Bipolar Junction Transistor.
Ans.: Advantage of JFET over Bipolar Junction Transistor :

JFET is a voltage-controlled device.
this
with
64
JFET operation depends only one

of
majority
charge
carriers
(electrons or holes) therefore it is
called unipolar transistor.
type
Its thermal stability is quite good.

JFET are much easier to fabricate
are particularly suitable for ICs.
and
FETs are costlier than BJTs.

Q.4
Describe how the characteristics of a JFET are determined experimentally.
Ans.: Characteristics Curve of JFET :

In JFET drain current
depend
the
drain
source voltage (VDS)
and
the
upon
(ID)
gate-source
voltage Vgs.
The dependence of
one
quantity over the other can be represented by plotting the curves between them.
These curves are called Characteristic Curves of JFET. These Characteristic
Curves are of two types:(i)
Drain characteristics : Keeping gate-source voltage VGS constant, graph

plotted between drain current ID and drain source voltage VDS is called
Drain Characteristics.
These characteristics can be divided into three regions :
(a)
Ohmic
Region
(b)
Saturation Region
(c)
Break-down Region
65
(ii)
Transfer Characteristics : Keeping
output voltage VDS constant in the pinch off region, if
a graph is plotted between the saturated drain
current IDS and the gate voltage VGS, then the family
of curves so obtained, is called Transfer
Characteristics.
Q.5
What is the principle of MOSFET? Explain its
types.
Ans.: Metal Oxide Semiconductor Field Effect Transistor (MOSFET) : MOSFET
works on the principle that the thickness and hence the resistance of the
conducting channel of a Semiconductor material can be controlled by a
transverse electric field across the insulator deposited on the semi conducting
material.
Types of MOSFET : MOSFET is of two types :
(i)
E-MOSFET (Enhancement MOSFET) : In this the controlling transverse

electric field across the insulator deposited on the semi conducting
66
material causes an increase (enhance) of the majority carrier density in the

conducting region of the transistor.
(ii)
Depletion MOSFET : In D-MOSFET the controlling electric field reduces

the majority carrier density in the conducting region.
E-MOSFET and D-MOSFET both are also of two types :
Q.6
(a)
N-Channel
(b)
P-Channel
What are the advantages of MOSFET over an FET.
Ans.: Advantages of MOSFET over an FET:
Q.7
(1)
The input resistance of the MOSFET is very high of the order of (10) 10 to
(10)15 ohm where as the input resistance of the JFET is less i.e. of the order
of 108 ohm.
(2)
The drain resistance of the MOSFET is much lower than that of a JFET.
(3)
Comparing to JFET, MOSFET are easier to fabricate.
(4)
MOSFET is very susceptible to overload voltage and needs special

handling.
(5)
JFET are operated only in the depletion mode where as depletion

MOSFET may be operated in both depletion and enhancement mode.
Describe the principle and construction of LCD.
Ans.: Liquid Crystal Display (LCD) :
67
In a liquid crystal cell, liquid crystal material is sandwiched between two

transparent glass plates with transparent SnO2 film electrodes deposited in inside
faces.
When both glass sheets are transparent, the cell is known as Transmittive Type
Cell. When only one glass sheet is transparent and other has a reflecting coating,
then cell is known as Reflective Type Cell. When cell is not activated, both
transmittive and reflective type cell do not appear bright.
When cell is activated, the incident light is scattered in all directions by both type
of cells and the cell appears quite bright. This type of LCD is known as Dynamic
Scattering Type LCD.
Another type of LCD is Field Effect LCD.
Q.8
Draw and explain a Seven Segment and Dot Matrix Display.
Ans.: Seven Segment Display : This can display all numerals and nine alphabets. It
consists of 7 rectangular LED/LCD which can be turned on/off to form desired
digit.
(1)
(2)
As shown in Fig.(2), external resistance is required to limit the current through

LED/LCD.
68
Dot Matrix Display : The another method of displaying numerals and letters is a
dot matrix formation of LEDs / LCDs in a monolithic structure.
Commonly used Dot Matrix for display are 5 x 7, 5 x 8, 7 x 9. Which can display
64 different alphanumeric characters by deriving the appropriate horizontal and
vertical inputs.

Q:1
A FET consists of a:
(a)
Drain
(b)
Source
(c)
Gate
(d)
All of the above
( )
2.
4
5
7.
8.
9.
10.
69
The best electronic device for switching is:

(a)
Triode
(b)
(c)
FET
(d)
BJT
MOSFET
( )
An SCR is a semiconductor device consisting of:

(a)
One PN junction
(b)
(c)
Three PN junctions
(d)
Two PN junction
Four PN junction
( )
a set of TRIACs
Two DIACs
( )
A thyristor is basically:
(a)
PNPN device
(c)
Two TRIACs
The gate- source diode of a JEFT should:
(a)
be forward biased
(b)
be reverse biased
(c)
be either forward or reverse biased
(d)
not be biased at all
A JFET:
(a)
Is a voltage controlled device
(b)
is a current controlled device
(c)
Has low input resistance
(d)
Has a very large voltage gain
(b)
(d)
( )
( )
The gate-source diode of a JFET should:

(a)
Be forward biased
(b)
be reverse biased
(c)
Be either forward or reverse biased
(d)
Not be biased at all
( )
When a JFET is operated above pinch-off voltage its drain current:

(a)
Increase sharply
(b)
Becomes constant
(c)
Starts increasing
(d)
Becomes zero
( )
Positive feedback is used in:

(a)
Rectifier
(c)
Amplifier
(b)
(d)
Detector
Oscillator
( )
A Shockley diode is the same as:

(a)
A four layer diode
(c)
A diac
(b)
(d)
An SCR
A triac
( )
70
11.
12.
13
14.
15.
Which is an optoelectronic device?

(a)
Phototransistor
(c)
LCD
(b)
(d)
LED
All of the above
Which one of the following has the negative resistance region?

(a)
Tunnel diode
(b)
Schottky diode
(c)
Step recovery diode
(d)
Optocoupler
(a)
A PNPN device
(b)
A combination of DIAC and TRIAC
(c)
A set of TRIACs
(d)
None of the above
( )
( )
( )
Which of the following needs light to be activated?

(a)
LED
(b)
LCD
(c)
LASCR
(d)
All of the above
( )
An FET consists of a:
(a)
Drain
(c)
Gate
( )
(b)
(d)
Source
All of the above
16.
After drain source voltage reaches pinch off value in a JFET, drain current
becomes:
(a)
Zero
(b)
Low
(c)
Saturated
(d)
Reversed
( )
17.
Compared to a bipolar transistor JFET has a much higher:

(a)
Voltage gain
(b)
Input resistance
(c)
Supply voltage
(d)
Drain current
Thyristors are used in:
(a)
Power supply
(b)
Amplifiers
(c)
Oscillators
(d)
Display devices
18
( )
( )
71
S.NO.
Q:01
02
03
04
05
06
07
08
09
Ans
S.NO.
10
11
12
13
14
15
16
17
18
Ans
72
BACHELOR OF COMPUTER APPLICATIONS

(Part-I) EXAMINATION
(Faculty of Science)
(Three Year Scheme of 10+2+3 Pattern)
PAPER - 117
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
OBJECTIVE PART- I
Year - 2011
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1.
2.
3.
According to Daltons atomic theory, an atom can:

(a)
be destroyes
(b)
be created
(c)
either be destroyed ar created
(d)
neither be destroyed nor created
( )
A matter has neither definite volume nor fixed shape is:

(a)
solid
(b)
liquid
(c)
gas
(d)
None of the above
( )
The maximum number of electrons possible in the shell of principal quantum number
n1 is
(a)
(c)
4.
n2
2n
(b)
(d)
2n 2
n(n+1)
( )
(a)
(c)
5.
6.
7.
8.
9.
10.
Ionic bond
Molecular bond
(b)
(d)
73
Covalent bond
Metallic bond
( )
For producing a p-type semiconductor which of these would used:

(a)
Acceptor atoms
(b)
Donar atoms
(c)
Pentavalent impurity
(d)
Arsenic
( )

(a)
decomposition
(b)
recombination
(c)
neutralization
(d)
covalent bonding
( )
Free electron exits in:

(a)
First band
(c)
Valence band
(b)
(d)
Forbidden band
Conduction band
( )
Depletion layer has:

(a)
Both free electrons and holes
(c)
Only free electrons
(b)
(d)
None of the free charge carriers

Only free holes
( )
A P-N junction in reverse bias acts as a:

(a)
(c)
Zero resistance
(b)
(d)
Very low resistance

None of the above
The characteristic curve of a P-N junction diode:
( )
74
( )
11.
Symbol of P-N junction diode is:
( )
12.
The varactor diode is used as:

(a)
Rectifier
(c)
Oscillator
(b)
(d)
Regulator
Switching circuits
( )
13.
14.
15.
16.
75
The color of light emitted by a LED depends upon:

(a)
its reverse bias
(b)
its forward bias
(c)
the amount of forward current
(d)
the type of semiconductor material used
( )

(a)
Amplifier
(c)
Regulator
(b)
(d)
Oscillator
Rectifier
( )
Which rectifier requires four diodes?

(a)
Half-wave rectifier
(c)
Full-wave rectifier
(b)
(d)
Bridge rectifier
All of the above
( )
Output wave of full-wave rectifier given:
( )
17.
18.
The efficiency of a half-wave rectifier is:

(a)
50%
(c)
40%
(b)
(d)
81%
100%
The current obtained from a rectifier without filter is:

(a)
Varying d.c.
(b)
Constant d.c.
( )
76
(c)
19.
20.
21.
Pulsating d.c.
(d)
d.c. mixed with a.c.
( )

(a)
Choke input filter
(b)
-filter
(c)
Capacitor filter
(d)
LC filter
( )
The output of a half-wave rectifier is suitable only for:

(a)
Charging batteries
(b)
Running a.c. motors
(c)
Running car radios
(d)
Running TV
( )
In transistor, the relation among emitter current I g , base current I B and Collector
Current I B is:
22.
23.
24.
(a)
Ic
IE
IB
(b)
IE
IB
IC
(c)
IE
IB
IC
(d)
IE
IC
IB

(a)
Temperature
(b)
(c)
Size of emitter
(d)
Transistor is known as bipolar transistor because it has:

(a)
Electrons
(b)
Holes
(c)
Electrons and holes
(d)
None of the above
In NPN or PNP transistor:
Ic I E
(a)
(c)
25.
26.
27.
Doping of base
Rating of transistor
Ic
IE
(b)
Ic
(d)
None of the above
( )
( )
IE
( )
(a)
Common base
(b)
Common emitter
(c)
Emitter follower
(d)
Common collector
( )

(a)
Zero
(b)
(c)
Unity
d)
( )
A PET consists of a:
(a)
Drain
Less than unity

Greater than unity
(b)
(c)
(d)
28.
29.
30.
31.
32.
33.
35.
Source
Gate
All of the above
( )
The best electronic device for switching is:

(a)
Triode
(b)
(c)
FET
(d)
BJT
MOSFET
( )
An SCR is a semiconductor device consisting of:

(a)
One PN junction
(b)
(c)
Three PN junctions
(d)
Two PN junction
Four PN junction
( )
(a)
PNPN device
(c)
Two TRIACs
(b)
(d)
a set of TRIACs
Two DIACs
( )
Semiconductor materials have bonds:

(a)
Ionic
(c)
Covalent
(b)
(d)
Metallic
Mutual
( )
Current flow in a semiconductor depends on the phenomenon:

(a)
Drift
(b)
Diffusion
(c)
Recombinationt
(d)
All of the above
Electronic configuration of sodium is:
1s 2 2 s 2 2 p 6 3s1
(a)
(c)
34.
77
1s 2 2s 2 2 p 2 3s 5
An example of p-type semiconductor:

(a)
Pure germanium
(b)
Pure silicon
(c)
Silicon doped with phosphorous
(d)
Germanium with Indium
The energy gap is the largest in the case of:
(a)
Metals
(b)
Semiconductor
(c)
Insulators
(b)
1s 2 2s 2 2 p 6 3s 2
(d)
1s 2 2 s 2 2 p 5 3s1
( )
( )
( )
78
(d)
Superconductors
( )
36.
For a P-N junction diode, the approximate ratio of resistances in reverse and forward bias
is:
(a)
1:1
(b)
103 :1
(c)
(d)
( )
10 3 :1
106 :1
37.
The device which converts d.c. into a.c. is called:

(a)
Rectifier
(b)
Oscillator
(c)
Amplifier
(d)
Modulator
( )
In filter circuit which component is connected in serier to load?

(a)
R
(b)
L
(c)
Diode
(d)
C
( )
Low power display device is:

(a)
LED
(c)
Monitor
( )
38.
39.
40.
(b)
(d)
LCD
Seven-segment display
Electrical energy is converted into light by:

(a)
Electronic device
(b)
Optoelectronic device
(c)
Optical device
(d)
All of the above
( )
Answer Key
1. ( )
2. ( )
3. ( )
4. ( )
5. ( )
6. ( )
7. ( )
8. ( )
9. ( )
10. ( )
11. ( )
12. ( )
13. ( )
14. ( )
15. ( )
16. ( )
17. ( )
18. ( )
19. ( )
20. ( )
21. ( )
22. ( )
23. ( )
24. ( )
25. ( )
26. ( )
27. ( )
28. ( )
29. ( )
30. ( )
31. ( )
32. ( )
33. ( )
34. ( )
35. ( )
36. ( )
37. ( )
38. ( )
39. ( )
40. ( )
79
_____________
DESCRIPTIVE PART-II
Year- 2011
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
Q.2
Q.3
(a)
Name and explain different types of bonds in solids with examples.
(b)
Explain the difference among conductors, insulators and semiconductors.
(a)
Explain intrinsic and extrinsic semiconductors with examples.
(b)
What do you mean by mobility of charge carrier?
(c)
Explain formation of depletion layer in PN junction semiconductor/diode.
(a)
Explain the working of P-N junction diode. Discuss its forward and reverse biased
characteristics.
(b)
Describe the construction and working of light emitting diode (LED) and mention
its two applications.
80
Q.4
(a)
What is meant by bipolar junction transistor? Draw a neat circuit diagram to study
the characteristics of a PNP transistor in common base configuration. Sketch the
input and output characteristics curves and indicate the active cut-off and
saturation regions.
Q.5
(b)
Prove the relation:
(a)
Describe the working of a half-wave rectifier. Find out its:
(b)
(i)
Average value of pulsating current and voltage.
(ii)
RMS value of pulsating current and voltage
(iii)
Efficiency
(iv)
Ripple factor.
Write down short notes on:

(i)
F.E.T.;
(ii)
S.M.P.S;
(iii)
Opto-electronic devices.
______
81
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2010
Maximum Marks : 20
1.
2.
3.
The reason for inter-molecular forces is:

(a)
Only dipole-dipole interactions
(b)
Only induced dipole interactions
(c)
Dispersive forces
(d)
All of the above
(a)
lonic
(c)
vander Waal
( )
(b)
(d)
In the metals, the most common interaction is:

(a)
ion-ion
(b)
Covalent
Metallic
ion-electron
( )
82
(c)
4.
5.
6.
7.
8.
9.
10.
11.
12.
election-electron
Election-volt is the unit of:

(a)
Momentum
(c)
Energy
(d)
repulsive
( )
(b)
(d)
Velocity
Potential
( )
The electron orbiting the nucleus possesses:

(a)
Potential energy only
(b)
Kinetic energy only
(c)
Partially potential and partially kinetic energy
(d)
None of the above
( )
The cause of conductivity in metal is:

(a)
Proton
(c)
Bound electron
(b)
(d)
Free electron
Ions
( )
The valence bond at OK is:

(a)
Completely filled
(c)
Partially
(b)
(d)
completely empty
Nothing can be said
( )
Semi-conductors such as Germanium and silicon exhibit.

(a)
Covalent bonding
(b)
Metallic bonding
(c)
Ionic bonding
(d)
van der walls bonding
( )
Holes are present in:

(a)
Valence band
(b)
Conduction band
(c)
Conduction and valence band
(d)
None of the above
( )
Current in a semi-conductor diode is due to the drift of:

(a)
Free electrons
(b)
Free electrons and holes
(c)
Positive and negative ions
(d)
Protons
( )
The resistivity of a semiconductor depends upon its:

(a)
Size
(b)
Type of atoms
(c)
Length
(d)
Size and type of atom
( )
In n-type semiconductor the fermi energy level is displaced:

(a)
towards the valence band
(b)
(c)
(d)
13.
14.
15.
16.
17.
19.
20.
towards the conduction band

not displace d
and depend on quantity of impurity
( )

(a)
1s2, 2s2, 2p6, 3s2, 3p4
(b)
1s2, 2s2, 2p6, 3s1, 3p3
(c)
1s2, 2s2, 2p6, 3S2, 3p2
(d)
1s2, 2s2, 2p6, 3s0, 3p4
The depletion region of a-p-n junction contains:

(a)
Electrons only
(b)
A rectifier
(c)
Electrons and holes
(d)
Neither electrons nor holes
A p-n junction can be used as:
(a)
An amplifier
(c)
An oscillator
(b)
(d)
( )
( )
A rectifier
A modulator
Depletion layer increases:

(a)
When p-n junction is formed
(b)
On applying forward bias
(c)
On applying the reverse bias
(d)
When temperature is decreases
( )
( )
The ratio of the resistance of a-p-n junction diode under forward biased and reverse
biased condition is:
(a)
102 :1
(b)
102 :1
(c)
18.
83
1 : 104
(d)
1 : 104
( )
The voltage where the avalanche occurs is called the:

(a)
Barrier potential
(b)
Peek voltage
(c)
Knee voltage
(d)
Breakdown voltage
( )
The output voltage for a half wave rectifier is:

(a)
Pure AC
(b)
(c)
Pulsating
(d)
( )
Pure DC
None of the above
A full wave rectifier is connected with an AC source of frequency 50 Hz. The output
current contains a ripple of what frequency?
84
(a)
(c)
21.
25 Hz
100 Hz
(b)
(d)
50 Hz
60 Hz
( )
Which of the following V-I graphs is correct for a p-n junction?

(a)
(b)
I
v
(c)
(d)
I
22.
23.
24.
The thinnest part of a transistor is:

(a)
emitter
(c)
collector
(b)
(d)
base
none of the above
( )
In p-n-p or n-p-n transistor:

(a)
Ie = Ic + Ib
(b)
Ic = Ie + Ib
(c)
Ie = Ib Ic
(d)
Ie = Ic Ib
Relation between
(a)
(c)
25.
and
( )
for a transistor is:

(b)
(d)
The martial used generally for the fabrication of a transistor is:

(a)
Capper
(b)
Silicon
(c)
Ebonite
(d)
Silver
( )
( )
26.
27.
28.
29.
An oscillator is nothing but an amplifier with:

(a)
positive feedback
(b)
(c)
no feedback
(d)
85
high gain
negative feedback
( )
The diamond is the hardest material because:

(a)
It has covalent bonds
(b)
It has large cohesive force
(c)
It has high melting point
(d)
It is not soluble
( )
The formation of depletion layer in a-p-n junction is due to:

(a)
Drift of holes
(b)
Diffusion of carries
(c)
Transport of impurity ions
(d)
Drift of electrons
( )

(a)
Amplifier
(c)
Oscillator
( )
(b)
(d)
Rectifier
All of the above
30.
The minimum energy required to ionine the hydrogen atom from its ground state is:
(a)
+ 13.6 eV
(b)
10.2 eV
(c)
+ 10.2 eV
(d)
13.6 eV
( )
31.
Structure of crystals is determined by:

(a)
Infra-red Rays
(c)
Ultraviolet rays
32.
33.
34.
(b)
(d)
Visible light rays

X-rays
The color of light emitted by an LED depends upon:

(a)
Its reverse bias
(b)
its forward bias
(c)
The amount of forward current
(d)
The type of semiconductor material used
The ripple factor of a bridge rectifier is:
(a)
0.482
(c)
1.11
(b)
(d)
( )
( )
0.812
1.21
The primary function of a filter is to:

(a)
Minimize a.c. input fluctuation
(b)
Suppress odd harmonics in the rectifier output
(c)
Remove ripple from rectifier output
( )
86
(d)
Stabilize d.c. level of output voltage
( )
35.
In N-P-N transistor both emitter and collector junctions are forward biased. The
transistor will operate in:
(a)
Active region
(b)
Saturation region
(c)
Cut-off region
(d)
Inverted region
( )
36.
Diffusion current in a P-N junction is caused by:

(a)
Chemical energy
(b)
(c)
Junction formation
(d)
37.
38.
39.
40.
Heat energy
None of the above
( )
The gate- source diode of a JEFT should:

(a)
be forward biased
(b)
be reverse biased
(c)
be either forward or reverse biased
(d)
not be biased at all
( )
The frequency range of the signal produced by audio frequency oscillator is:
(a)
(103 to 2 X 104) KHz
(b)
(103 to 2 X 104) MHz
(c)
(103 to 2 X 104) Hz
(d)
None of the above
( )
In case of a bipolar transistor is:

(a)
positive and greater than one
(b)
positive and less then one
(c)
negative and very small
(d)
negative and less than one
( )
An oscillator converts:
(a)
A.C. power into D.C. power
(b)
D.C. power into A.C. power
(c)
Mechanical power into A.C. power
(d)
A.C. power into rediation power
( )
Answer Key
1. (d)
2. (a)
3. (b)
4. (c)
5. (c)
6. (b)
7. (a)
8. (a)
9. (a)
10. (b)
87
11. (d)
12. (b)
13. (c)
14. (d)
15. (b)
16. (c)
17. (d)
18. (d)
19. (c)
20. (d)
21. (c)
22. (b)
23. (a)
24. (d)
25. (b)
26. (b)
27. (a)
28. (b)
29. (d)
30. (a)
31. (d)
32. (d)
33. (a)
34. (c)
35. (b)
36. (c)
37. (b)
38. (c)
39. (b)
40. (b)
_________
DESCRIPTIVE PART-II
Year- 2010
Maximum Marks : 30
Q.1
(a)
Explain the principle of energy bands in solids and classify the solids on the
basis of electrical conductivity.
Q.2
(b)
What is the difference between covalent and metallic bond?
(a)
Derive the expression of conductivity of an intrinsic semiconductor in terms of

mobility.
(b)
Explain the working of P.N. junction diode. Discuss its forward and reverse biased
characteristics.
Q.3
(a)
Describe the construction and working of light emitting diode (LED) and mention
its four applications.
Q.4
(b)
Define ripple factor and efficiency of a rectifier.
(a)
Draw the equivalent circuits of a transistor using h-parameters is CB and CE configurations.
(b)
Discuss the role of
section filter.
88
Q.5
(a)
Describe the action of a transistor as an amplifier. Derive the relation for current
gain in CE configuration transistor amplifier using h-parameters.
Q.6
(b)
Write elementary information about Field Effect Transistor (FET).
(a)
Derive the feedback requirements for oscillation in feedback oscillator.
(b)
Write down the postulates of Bohr's atomic model.
(c)
Sketch the block diagram of switching mode power supply (SMPS)

_________
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2009
Maximum Marks : 20
1.

(a)
Solids
(b)
(c)
Gases
(d)
Liquids
( )
2.
Each energy band of a small piece of solid containing 100 atoms will have closely
spaced energy levels equal to:
(a)
50
(b)
100
(c)
200
(d)
500
( )
3.

(a)
Ar
(b)
NaCL
(c)
Ge
(d)
Na
4.
( )
In an intrinsic semiconductor at any finite temperature, the number of free electrons:
(a)
(b)
(c)
(d)
89
Is equal the number of holes

Is greater than the number of holes
Is lower than the number of holes
Is zero
( )
5.
The number of free electrons and holes in an intrinsic semiconductor increase when
the temperature:
(a)
Decreases
(b)
Increases
(c)
Stays the same
(d)
None of the above
( )
6.
7.
(a)
1s2, 2s2, 2p6, 3s2, 3p4
(b)
1s2, 2s2, 2p6, 3s2, 3p2
(c)
1s2, 2s2, 2p6, 3S1, 3p3
(d)
1s2, 2s2, 2p6, 3s0, 3p4
To make an n-type material, following is added to Ge:

(a)
Al
(b)
B
(c)
P
(d)
In
( )
( )
8.
The energy needed to detach the fifth valence electron from the Antimony (Sb)
impurity atom surrounded by Ge atoms is approximately:
(a)
0.001 eV
(b)
0.01 eV
(c)
0.1 eV
(d)
1.0 eV
( )
9.
In an N-type semiconductor, the position of 89ermi level:

(a)
Is lower than the centre of energy gap
(b)
Is at the centre of the energy gap
(c)
Is higher than the centre of energy gap
(d)
Can be anywhere in energy gap depending upon the
concentration of impurity atoms
( )
10.
When the graph of the Current Versus Voltage is a straight line, the device is referred
as:
(a)
Active
(b)
Linear
(c)
Nonlinear
(d)
Passive
( )
11.
The voltage where the Avalanche Occurs is called the:
90
(a)
(b)
(c)
(d)
Barrier potential
Peak voltage
Knee voltage
Breakdown voltage
knee
12.
The reverse saturation current in diode (Ge) at room temperature is of the order of:
(a)
InA
(b)
1 A
(c)
ImA
(d)
1A
( )
13.
If the input frequency is 60 Hz, the output frequency of hal-wave rectifier is:
(a)
30 Hz
(b)
60 Hz
(c)
120 Hz
(d)
240 Hz
( )
Photodiode is normally:
(a)
Forward biased
(b)
Reverse biased
(c)
Neither forward nor reverse biased
(d)
None of above
( )
Introduction of negative feedback in an amplifier increases:

(a)
Gain
(b)
Noise level
(c)
Band width
(d)
Harmonic distortions
( )
Varactor diodes are:

(a)
Reverse biased
(c)
Band width
(b)
(d)
Voltage sensitive capacitor

None of the above
( )
Who invented the first junction transistor?

(a)
Bell
(c)
Marconi
(b)
(d)
Faraday
Schockley
( )
14.
15.
16.
17.
18.
19.
The current amplification factor in common collector configuration as:

(a)
(b)
(c)
(d)
The base of an n-p-n transistor is thin and:
(a)
Heavily doped
(b)
Lightly doped
( )
(c)
(d)
20.
21.
91
Marconi
Doped by pentavalent material
I bell is equal to:

(a)
1 db
(c)
100 db
In a transistor the value of a
(a)
0.01
(c)
0.99
( )
(b)
(d)
10 db
1000 db
is 100, the value of is:

(b)
0.1
(d)
1
( )
( )
22.
The d.c. output voltage drops from 6 V with no load to 5.8 v at full load. The
percentage regulation is:
(a)
1.72 %
(b)
3.33 %
(c)
3.45 %
(d)
6.67 %
( )
23.
If Em is the maximum voltage across secondary coil of transformer, then PIV of a half
wave rectifier circuit is:
(a)
Em
(b)
2 Em
(c)
24.
3 Em
Which rectifier requires four diodes?

(a)
Half wave rectifier
(b)
Full wave rectifier
(c)
Bridge rectifier
(d)
Half wave rectifier with filter
(d)
0.5 Em
( )
( )
25.
A power supply with a.d.c. output of 140 V has 60 Hz ripple of 1.4 V what is the
percentage ripple:
(a)
0.1 %
(b)
1.0 %
(c)
0.14 %
(d)
2.4 %
( )
26.
A JFET:
(a)
Is a voltage controlled device
(b)
is a current controlled device
(c)
Has low input resistance
(d)
Has a very large voltage gain
27.
The gate-source diode of a JFET should:
( )
92
(a)
(b)
(c)
(d)
28.
29.
30.
31.
32.
33.
34.
35.
36.
Be forward biased
be reverse biased
Be either forward or reverse biased
Not be biased at all
( )
When a JFET is operated above pinch-off voltage its drain current:

(a)
Increase sharply
(b)
Becomes constant
(c)
Starts increasing
(d)
Becomes zero
( )

(a)
Rectifier
(c)
Amplifier
(b)
(d)
Detector
Oscillator
( )
A Shockley diode is the same as:

(a)
A four layer diode
(c)
A diac
(b)
(d)
An SCR
A triac
( )
Which is an optoelectronic device?

(a)
Phototransistor
(c)
LCD
(b)
(d)
LED
All of the above
( )
Which one of the following has the negative resistance region?

(a)
Tunnel diode
(b)
Schottky diode
(c)
Step recovery diode
(d)
Optocoupler
( )
Mobile holes are found in :

(a)
Valance band
(c)
Band gap
( )
(b)
(d)
Fermi energy level

Conduction band
Silver is the best conductor, how many valence electrons do you think it has:
(a)
I
(b)
4
(c)
18
(d)
29
( )
Which one of the following cannot move is solids:

(a)
Holes
(b)
Free electrons
(c)
Majority charge carries
(d)
Ions
( )
Most of the electrons that flow through the base will:

(a)
Flow into the collector
(b)
Flow out of the base lead
(c)
(d)
37.
38.
39.
40
93
Recombine with the base holes

Recombine with the collector holes
( )
Fermi level of an intrinsic semiconductor lies:

(a)
Near conduction bank but in bank gap
(b)
Near valence bank but in band gap
(c)
Half way between the condition and valence band
(d)
In the valence band
( )
The density of charge in an intrinsic semiconductor is proportional to:

(a)
Exp (Eg/ kt)
(b)
Exp (2Eg/kt)
(c)
Exp (Eg/kt2)
(d)
Exp (Eg/2kt)
( )
an oscillator converts :
(a)
Ac power into DC power
(b)
DC power nto AC power
(c)
Mechanical power into AC powe
(d)
None of the above
( )
When a H-atom raised from the ground state to an excited state?

(a)
PE decreased and KE increases
(b)
PE increases and KE decreases
(c)
Both PE and KE increase
(d)
Both PE and KE decreases
( )
Answer Key
1.
2. (b)
3.
4. (a)
5. (b)
6. (b)
7.
8. (b)
9. (d)
10. (b)
11. (b)
12. (b)
13. (b)
14. (b)
15. (a)
16.
17. (d)
18.
19. (b)
20. (b)
21.
22.
23. (a)
24.
25. (b)
26. (a)
27. (b)
28. (b)
29. (d)
30. (a)
31. (d)
32. (a)
33. (a)
34. (a)
35. (d)
36. (a)
37.
38. (d)
39. (b)
40. (b)
94
___________
95
DESCRIPTIVE PART-II
Year- 2009
Maximum Marks : 30
Q.1
(a)
What is Bohr's quantum condition for angular momentum of electron in an atom?

Write the name of symbols used in the condition.
Q.2
(b)
Give five examples of covalent bonding.
(a)
What are the characteristics of a semiconductor? What do you mean by depletion

layer in a-p-n junction?
(b)
Classify each of the following as n-type or p-type semiconductors:

(i)
Doped by acceptor atoms
(ii)
Crystal with pentavalent impurities
(iii)
Majority carriers are holes
(iv)
Minority carriers are free electrons
(v)
Donor atoms were added to crystal.
Q.3
Discuss the V-I characteristics of a tunnel diode and write its applications.
Q.4
(a)
Define mobility and electrical conductivity and give their SI units.
(b)
Draw an energy level diagram showing the donor and acceptor energy levels with
respect to valence and conduction bands.
Q.5
Q.6
(a)
Derive an expression for ripple factor for a full ware rectifier.
(b)
Discuss the role of L section filter.
(a)
Write elementary information about thyristors and display devices
(b)
Explain bipolar junction transistor.

__________
96
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2008
Maximum Marks : 20
1.
2.
3.
The charge of neutron is:

(a)
1.6 X 1019 Coulomb
(c)
Zero
(b)
(d)
1.6 X 10+19 Coulomb

None of the above
( )
Total energy of electron in atom is:

(a)
+ve
(c)
Zero
(b)
(d)
ve
None of the above
( )
In cubic crystal all the three crystal axes are:

(a)
Perpendicular
(b)
(c)
Diagonal
(d)
Parallel
None of the above
( )
4.
The electrons that usually do not contribute to the electrical behaviours of the
materials are known as:
(a)
Bound electrons
(b)
Free electrons
(c)
Valence electrons
(d)
None of the above
( )
5.
The resistivity of a semiconductor at Ok is:

(a)
Zero
(b)
5
(c)
10
(d)
Infinite
None of the above
( )
The unit of current density is:

(a)
C/m2
(c)
Ampere/m2
C/m3
Ampere/m3
( )
6.
7.
(b)
(d)

(a)
Neutralization
(b)
Decomposition
(c)
8.
9.
10.
11.
12.
13.
Recombination
(d)
97
None of the above
( )
The example of intrinsic semiconductor is:

(a)
Ge
(b)
(c)
Sb
(d)
Ca
Ag
( )
In LED, blue light is emitted by:

(a)
GaAs
(c)
GaAsP
GaP
GaN
( )
(b)
(d)
Diffusion current in a PN junction is caused by:

(a)
Heat energy
(b)
Chemical energy
(c)
Junction formation
(d)
None of the above
( )
The ripple before using any filter in a full wave rectifier is:
(a)
1%
(b)
41 %
(c)
48.2 %
(d)
None of the above
( )

(a)
L section
(b)
Choke input
(c)
filter
(d)
None of the above
( )
When Vn is the no load voltage and VL is voltage on load then % voltage regulation
is given by:
(a)
(b)
(c)
(d)
14.
None of the above
( )
In a full wave rectifier operating at 50 Hz main frequency, the fundamental frequency of

the ripple will be:
(a)
25 Hz
(b)
50 Hz
(c)
(d)
None of the above
( )
98
15.
The common-emitter gain ( ) of a transistor is defined as:

(a)
(b)
(c)
(d)
16.
Figure represents a:
(a) PNP transistor
(b) NPN transistor
(c) Unipolar transistor
(d) None of the above
17.
In case of a bipolar transistor, is:

(a)
+ve and greater than one
(b)
+ve and less than one
(c)
-ve and less than one
(d)
None of the above
18.
The relation between

(a)
and
20.
21.
22.
( )
( )
is given by:
(c)
19.
None of the above
(b)
None of the above
( )

(a)
Temperature
(b)
(c)
Size
(d)
Doping
None of the above
( )
The smallest part of a transistor is:

(a)
Emitter
(c)
Collector
(b)
(d)
Base
None of the above
( )
The unit of impedance is given by:

(a)
Ampere
(c)
Volt
(b)
(d)
Ohm
None of the above
( )
The current gain of CC amplifier is:
(d)
(a)
(c)
23.
24.
25.
26.
27.
28.
Zero
Unity
The decibel is a measure of:

(a)
Power ration
(c)
Current ratio
99
(b)
(d)
Greater than unity

Less than unity
( )
(b)
(d)
Voltage ratio
None of the above
( )

(a)
Remains constant
(b)
Equal to one
(c)
(d)
Depends on output
( )
Ina practical oscillator, A is:

(a)
slightly less than one
(b)
I
(c)
1
(d)
slightly greater than one
( )
(a)
A PNPN device
(b)
A combination of DIAC and TRIAC
(c)
A set of TRIACs
(d)
None of the above
( )
Which of the following needs light to be activated?

(a)
LED
(b)
LCD
(c)
LASCR
(d)
All of the above
( )
An FET consists of a:
(a)
Drain
(c)
Gate
( )
(b)
(d)
Source
All of the above
29.
After drain source voltage reaches pinch off value in a JFET, drain current
becomes:
(a)
Zero
(b)
Low
(c)
Saturated
(d)
Reversed
( )
30.
Compared to a bipolar transistor JFET has a much higher:

(a)
Voltage gain
(b)
Input resistance
100
(c)
31.
32.
33.
34.
35.
36.
37.
38.
39
Supply voltage
(d)
Drain current
( )
Which of the following semiconductor is electrically positive?

(a)
P-type
(b)
N-type
(c)
Intrinsic SC
(d)
None of the above
( )
A P-type semiconductor contains holes and:

(a)
+ve ions
(b)
(c)
Pentavalent atoms
(d)
( )
ve ions
Donor atoms
The voltage across the zener assistance is equally:

(a)
Small
(b)
Large
(c)
Zero
(d)
None of the above
( )

(a)
Amplifier
(c)
Regulator
( )
(b)
(d)
Oscillator
Rectifier
Which of the following is always used in forward biased arrangement?

(a)
Zener diode
(b)
LED
(c)
Photodiode
(d)
Varactor diode
( )
Tunnel diode is used as:

(a)
Oscillator
(c)
Rectifier
( )
(b)
(d)
Amplifier
Regulator
Which rectifier required four diodes?

(a)
Half rectifier
(b)
Full rectifier
(c)
Bridge rectifier
(d)
None of the above
( )
A transistor is in active region then:

(a)
IB= Ic
(b)
IC= IB
(c)
IC= IE
(d)
IC= IB
The output voltage of CE amplifier is:

(a)
Amplified
( )
(b)
(c)
(d)
40
101
Inverted
180o out of phase with the input
All of the above
( )
An amplifier power is charged from 10 to 20 . The equivalent d B gain will be:

(a)
2 dB
(b)
3 dB
(c)
6 dB
(d)
10 dB
( )
Answer Key
1. (c)
2. (b)
3. (a)
4. (a)
5. (b)
6. (c)
7. (c)
8. (a)
9. (d)
10. (c)
11. (c)
12. (c)
13. (c)
14. (c)
15. (a)
16. (b)
17. (b)
18. (b)
19. (a)
20. (b)
21. (b)
22. (b)
23. (a)
24. (b)
25. (d)
26. (a)
27. (c)
28. (d)
29. (c)
30. (b)
31. (d)
32. (b)
33. (a)
34. (c)
35. (d)
36. (a)
37. (c)
38. (b)
39. (d)
40. (b)
__________
102
DESCRIPTIVE PART-II
Year- 2008
Maximum Marks : 30
Q.1
(a)
What are conduction band, valence band and forbidden gap? Explain these bands
by proper diagrams.
(b)
Q.2
Write down the postulates of Bohr's atomic model
What is intrinsic semiconductor? Give examples of intrinsic semiconductor. Describe the

crystal structure of intrinsic semiconductor. What are the charge carriers in them?
Q.3
Explain V-I characteristics of a PN junction diode and also explain the effect of
temperature on a diode.
Q.4
Sketch bridge rectifier showing direction of current flowing through the circuit and
explain its working.
Q.5
Discuss the current components in a junction transistor and hence prove that
IE=IB+IC
Q.6
Derive the feedback requirement for oscillations in feedback oscillators
_________
103
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2007
Maximum Marks : 20
1
2.
3.
4.
5.
6.
7.
The maximum number of electrons in nth shell of an atom is:

(a)
n2
(b)
2n
(c)
n (n + 1)
(d)
2n2
( )
The range of intermolecular force is:

(a)
infinite
(c)
10 A
(b)
(d)
1 3 A
0
( )
The bonds in silicon crystals are:

(a)
Covalent
(c)
metallic
(b)
(d)
ionic
None of the above
( )
Example of a semiconductor is:

(a)
Al
(c)
Fe
(b)
(d)
Cu
Si
( )
The unit cell with crystallographic dimension, a = b c and

(a)
cubic
(b)
hexagonal
(c)
monoclinic
(d)
tetragonal
is:
( )
The number of fundamental crystal structures are:

(a)
7
(b)
(c)
21
(d)
14
28
( )
On heating resistance of conductor:

(a)
increase
(c)
does not change
decreases
becomes zero
( )
(b)
(d)
104
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
The forbidden gap of germanium crystal is:

(a)
0.7 eV
(b)
(c)
0.07 eV
(d)
7 eV
Zero
( )
Holes are minority carriers in .....................semiconductor.

(a)
N-type
(b)
P-type
(c)
intrinsic
(d)
extrinsic
( )
Free electrons exist in:

(a)
First band
(c)
valence band
( )
(b)
(d)
forbidden band
conduction band
The large depletion layer in P-N junction diode is due to:

(a)
forward bias
(b)
reverse bias
(c)
zero bias
(d)
none of the above
( )
Zener diode used in circuit is always biased:

(a)
forward
(b)
(c)
zero
(d)
reverse
none of the above
( )
Zener diode is:

(a)
Rectifier diode
(c)
constant voltage device
(b)
(d)
constant current device

forward biased diode
( )
Zener diode is used is:

(a)
amplifier
(c)
regulator
(b)
(d)
oscillator
rectifier
( )
2
4
( )
Number of diodes used in a bridge rectifier is:

(a)
1
(b)
(c)
3
(d)
Which of the following has negative resistance regions?

(a)
varactor
(b)
rectifier
(c)
tunnel diode
(d)
photodiode
( )
A photodiode is:
(a)
forward biased
(c)
zero biased
( )
(b)
(d)
reverse biased
none of the above
18.
19.
20.
21.
22
23.
24.
25.
26.
105
Efficiency of half wave rectifier is:

(a)
81.6 %
(c)
20.2 %
(b)
(d)
40.6 %
90 %
( )
Ripple factor of a bridge rectifier is:

(a)
0.48
(c)
1.11
(b)
(d)
0.81
1.21
( )
Average d.c. of a bridge rectifier is (where V0 is peak value):

(a)
(b)
(c)
(d)
A transistor has number of pins:

(a)
1
(c)
3
(b)
(d)
2
4
( )
Emitter junction of a transistor is biased:

(a)
forward
(c)
zero
(b)
(d)
reverse
all of the above
( )
The common base current gain
( )
of a transistor is:
(a)
(b)
(c)
(d)
The relation between transistor parameter
and
(a)
(b)
(c)
(d)
The thinnest part of a transistor is:

(a)
emitter
(c)
collector
(b)
(d)
In a transistor correct relation in Ib Ic and Ie is:

(a)
IC = IE + IB
(b)
( )
is:
( )
base
None of the above
IE= IC+IB
( )
106
(c)
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
IE = IBIC
In general gain of a transistor is:

(a)
real
(c)
complex
(d)
IE = ICIB
( )
(b)
(d)
imaginary
non-complex
( )

(a)
(b)
(c)
(d)
The value of feedback fraction is:

(a)
(c)
(b)
(d)
The negative feedback increase:

(a)
gain
(c)
noise
(b)
(d)
bandwidth
All of the above
( )
FET is used as:

(a)
Amplifier
(c)
regulator
(b)
(d)
rectifier
detector
( )
( )
( )
An SCR is a semiconductor device consisting of number of diodes:

(a)
1
(b)
2
(c)
3
(d)
4
( )
Which of the following needs light to activate?

(a)
LED
(b)
(c)
LASCR
(d)
( )
LCD
None of the above
The minimum number of segments required in LED/LCD to be:

(a)
3
(b)
7
(c)
9
(d)
11
( )
Which material is used as light sensing?

(a)
Se
(c)
CdS
( )
(b)
(d)
PbS
All of the above
A seven segment display used maximum current when it display:
(a)
(c)
37.
38.
39.
40.
0
8
107
(b)
(d)
5
4
( )
(b)
(d)
1
4
( )
Computer has SMPS for its:

(a)
memory
(c)
display
(b)
(d)
power
I/O device
( )
The input resitance of BJT is:

(a)
102 104
(c)
106 108
(b)
(d)
104 106
110
( )
Band gap of GaAs is:

(a)
1.1 eV
(c)
1.3 eV
(b)
(d)
0.72 eV
2.4 eV
( )
Number of capacitors in
(a)
0
(c)
2
section filter is:
Answer Key
1. (d)
2.
3. (a)
4. (d)
5. (d)
6. (a)
7. (a)
8. (a)
9. (a)
10. (d)
11. (b)
12. (b)
13.
14.
15. (d)
16.
17. (b)
18. (b)
19. (a)
20. (b)
21.
22. (a)
23.
24. (b)
25. (b)
26. (b)
27.
28. (b)
29. (a)
30. (b)
31. (a)
32.
33.
34. (b)
35. (d)
36.
37.
38. (b)
39. (a)
40.
______________
108
DESCRIPTIVE PART-II
Year- 2007
Maximum Marks : 30
Q.1
(a)
Describe differences between three states of matter.
(b)
Name fundamental types of crystals
Q.2
Explain classification of solids on the basis of electrical conductivity.
Q.3
(a)
Explain difference between P and N type semiconductors.
(b)
Describe working of half-wave rectifier.
Q.4
Describe working of PNP transistor and its characteristics in CB configuration.
Q.5
Explain transistor amplifier in CE configuration with feedback.
Q.6
Describe in brief:
(a)
SCR
(b)
FET
(c)
SMPS
__________
109
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2006
Maximum Marks : 20
1.
2.
3.
4.
5.
6.
7.
Bonds in semiconductor are:

(a)
Covalent
(c)
Metallic
(b)
(d)
Ionic
neutral
( )
Band gap in Ge and Si lies in range:

(a)
0.5 1.5 eV
(c)
2.5 3.5 eV
(b)
(d)
1.5 2.5 eV
3.5 4.5 eV
( )
In intrinsic semiconductors:
(a)
nh < ne
(c)
nh = ne
(b)
(d)
nh > ne
nh = ne = 0
( )
The unit of resistance is:

(a)
Mho
(c)
Farad
(b)
(d)
Ohm
Ampere
( )
Cut in voltage of Si diode is of the order of:

(a)
0.2 V
(b)
(c)
0.2 mV
(d)
0.6 mV
0.6 V
( )
One electron volt (eV) is equal to:

(a)
1.6 X 1019V
(c)
1 V
1.6 X 1019 V
1
V
( )
(b)
(d)
For highly doped diode:

(a)
Zener break down is likely to take place
(c)
Avalanche break down is likely to take place
110
(c)
(c)
8.
9.
10.
11.
12.
13
14.
15.
16.
Either will take place

Neither will take place
Zener diode is generally operated:

(a)
In forward bias
(c)
In zero bias
( )
(b)
(d)
In reverse bias
Both in same bias
( )
For a n-p-n transistor the collector voltage is:

(a)
ve
(b)
(c)
O
(d)
+ve
a.c. voltage
( )
Highly doped region in a transistor is:

(a)
Emitter
(c)
Base
(b)
(d)
Collector
All are equally doped
( )
Thinnest region in a transistor is:

(a)
Emitter
(c)
Both of the above
(b)
(d)
Base
All of the above
( )
Transistor is a:
(a)
Voltage operated device
(c)
Both of the above
(b)
(d)
Current operated device

None of the above
( )

(a)
Switch
(c)
Oscillator
(b)
(d)
Amp lifer
All of the above
( )

(a)
Af =
(c)
Af =
(b)
Af =
(c)
Af =
( )
Crystal structure of NaCl is:

(a)
FCC
(c)
Both of above
(b)
(d)
BCC
None of above
Photodiode operates in:

(a)
Forward bias
(b)
Reverse bias
( )
(c)
17.
18.
19.
20.
21.
22.
23.
24.
25.
Zero bias
111
(d)
All of the above
( )
Light emitting diode is made of:

(a)
Ge
(c)
GaAs
(b)
(d)
Si
All of the above
( )
Functional break down occurs in:

(a)
LED
(c)
Varactor diode
(b)
(d)
Photo diode
Zener diode
( )
The relation in IB, IC and IE of a transistor is:

(a)
IB=Ic+IE
(b)
(c)
IE=IB+IC
(d)
IC=IB+IE
All of the above
( )
Input resistance of an ideal amplifier is:

(a)
0
(b)
(c)
(d)
None of the above
( )
Charge on a hole in magnitude is equal is:

(a)
One electron
(c)
Oscillator
(b)
(d)
Amplifier
None of the above
( )
Tunnel diode is used in:

(a)
Rectifier
(c)
Oscillator
(b)
(d)
Amplifier
All of the above
( )
The value of in transistor lies in the range:

(a)
0.5 0.99
(b)
(c)
10-100
(d)
110
1001000
( )
The value of in transistor lies in the range:

(a)
0.01 0.99
(b)
(c)
10-100
(d)
110
1001000
( )
No. of pins in an transistor:

(a)
1
(c)
3
2
4
( )
(b)
(d)
112
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
No. of pins in a FET:

(a)
1
(c)
3
(b)
(d)
2
4
( )
Advantage of negative feedback amplifier is:

(a)
Highly stabilized gain
(b)
(c)
Reduce noise
(d)
Improved frequency response

All of the above
( )
No. of h parameters in transistor:

(a)
2
(c)
4
(b)
(d)
3
5
( )
No. of p-n junction in BJT:

(a)
1
(c)
3
(b)
(d)
2
4
( )
No. of p-n junctions in UJT are:

(a)
1
(c)
3
(b)
(d)
2
4
( )
Gain of a transistor with negative feedback:

(a)
Decreases
(b)
(c)
No-charge
(d)
Increases
None of the above
( )

(a)
Amplifier
(c)
Oscillator
(b)
(d)
Rectifier
None of the above
( )
Efficiency of a half wave rectifier is:

(a)
zero
(c)
40.6 %
(b)
(d)
20.3 %
81.2%
( )
Ripple factor bridge rectifier is:

(a)
1.21
(c)
0.24
(b)
(d)
0.47
None of the above
( )
Low power display can device is:

(a)
LED
(c)
Monitor
(b)
(d)
LCD
Seven segment display
( )
36.
37.
38.
39.
40.
Colour of a display can be changed by:

(a)
Voltage
(c)
Frequency
(b)
(d)
Electrical energy is converted into light using:

(a)
Electronic device
(b)
(c)
Opto electronic device
(d)
113
Current
None of the above
( )
Optical device
All of the above
( )
Frequency of ripple in full wave rectifier working at 50 Hz AC is:

(a)
25 Hz
(b)
50 Hz
(c)
100 Hz
(d)
20 kHz
( )
Frequency of ripple in SMPS working at 50 Hz AC is:

(a)
25 Hz
(b)
50 Hz
(c)
100 Hz
(d)
20 kHz
( )
Thyristors are used in:

(a)
Power supply
(c)
Oscillators
( )
(b)
(d)
Amplifiers
Display devices
Answer Key
1. (a)
2. (a)
3. (c)
4. (b)
5. (b)
6. (b)
7. (a)
8. (b)
9. (b)
10. (a)
11. (b)
12. (b)
13. (d)
14. (b)
15. (a)
16. (b)
17. (c)
18. (d)
19. (c)
20. (d)
21. (a)
22. (c)
23. (c)
24. (a)
25. (c)
26. (c)
27. (d)
28. (c)
29. (b)
30. (a)
31. (a)
32. (c)
33. (c)
34. (b)
35. (b)
36. (d)
37. (c)
38. (c)
39. (a)
40. (a)
_____________
114
DESCRIPTIVE PART-II
Year- 2006
Maximum Marks : 30
Q.1
Q.2
Q.3
Q.4
Q.5
Q.6
(a)
Name and explain different types of bonds in solid with examples.
(b)
Explain the differences between conductors and semiconductors.
(a)
Explain different types of semiconductors with examples.
(b)
Define the donor and acceptor impurities.
(a)
Name different types of diodes and their uses.
(b)
Explain - V-I characteristics of p-n junction and its temperature
(a)
Define parameters of a transistor and explain their relationship
(b)
Compare the n-p-n and p-n-p transistors.
(a)
Explain construction and working of a power supply with electronic component.
(b)
Explain voltage regulation using zener diode.
Define and explain:

(a)
Electronic oscillator
(b)
SMPS
(c)
Display devices.
dependence.
115
Key words
Amplification: a method for increasing the amplitude (or loudness) of electrical signals
Amplifier: An electronic device which generates a high power signal based on the
information supplied by a lower powered signal. A perfect amplifier would add or
subtract nothing from the original except additional power - these have not been
invented yet
Amplitude: the loudness of sound waves and electrical signals. Amplitude is measured
in decibels (dB) or volts
Crystal - solid featuring periodic spatial arrangement of atoms throughout the entire
piece of material
Semiconductors, III-V - III-V semiconductors are fabricated using elements from 3rd
and 5th group of periodic table; e.g. GaAs, Gap, GaN, GaAlAs.
Current Density - Current per unit area.
Energy gap - a range of forbidden energy levels between two permitted bands.
Fermi Level - the Fermi level is the energy at which the probability of occupation by an
electron is exactly one half.
Impurity - a substance that is incorporated into a semiconductor material and provides
free electrons (n-type impurity) or holes (p-type impurity).
Intrinsic Semiconductor - a semiconductor that has no impurities to change the
conduction properties of the material.
Lattice - a regularly space array of points that represents the structure of a crystal.
Crystals are composed of groups of atoms repeated at regular interval in three
dimensions with the same orientation.
LASER - Light Amplification by the Stimulated Emission of Radiation
116
Mobility - in an electrical conductor, the ratio of the drift speed and the applied electric
field.
n- type Semiconductor - material doped with donors to increase the population of free
electrons.
p-n junction - semiconductor material doped in with donors and acceptors to form a
sharply defined region with over which the doping type changes from p to n. A single
p-n junction acts as a diode
p- type Semiconductor - semiconductor material doped with acceptors to create 'holes'
Semiconductor - a material that is characterised by ability to conduct a small a electrical
current. In terms of the band model, the lower energy levels are filled at low
temperatures
Valence Band - the highest occupied energy level in a solid crystal semiconductor or
insulator that is occupied by electrons at T= 0K.
The number identifying an element in the periodic table, the atomic number of an
element equals the number of protons (which also equals the number of electrons) in
the nucleus of a neutral atom.
Energy Band: The continuous range of allowed energies for electrons in a solid.
Individual atoms can have only certain quantized energies. As atoms bond to form
solids, each energy level "spreads" to accommodate the shifted levels of adjacent atoms.
Atoms in the solid can occupy any energy in one of the newly-formed "bands".
Band Gap:
The range of energies between two allowed energy bands in a solid. Electrons in the
solid can only take energies in the allowed bands, so electrons cannot have one of the
energies in the gap
Charge Carrier
A particle having electric charge that can move freely through the material. In
conductors, electrons are free to move, so they are the charge carriers. Holes are the
charge carriers in p-type semiconductors. Positive or negative ions can be charge
117
carriers in some liquids.

Conduction Band
The unfilled top Energy band in a solid. Since this band is not filled, electrons with
energies in this band can move easily through the solid, creating an electric current.
Conductor A material with low resistivity used for contacts and interconnects in
semiconductor processing. Conductors have a partially filled valence band, through
which electrons can move freely
Conductivity ():A measure of how freely current can flow through a material.
Coulomb (C):The SI unit of electric charge. One coulomb is a fairly large amount of
charge, equaling the charge of 6.25 x 1018 protons.
Covalent Bond
An interaction between atoms by which they "share" valence electrons in the outermost
energy shell,
Diffuse
To spread out, particularly when substance was originally concentrated
Diffusion Current
The current occurring at a p-n junction due to diffusion of charge carriers. The n-side of
the junction contains conduction electrons, while the p-side contains holes. These
electrons and holes will move across the junction as they diffuse, causing a net
(positive) electric current from the p-side to the n-side.
Diode
A semiconductor device which allows current to flow in only one direction. A is
composed of a single p-n junction, and the words can often be used interchangeably.
When a forward bias is applied (positive terminal of a battery connected to the p-side of
the junction and negative terminal to the n-side).
118
Donor
An element that "donates" an electron to a semiconductor atom. Donors will have one
more valence electron than the semiconductor they accept from.
Drift Velocity
The average velocity of charge carriers in a material. This is not the same as the average
speed.
Electron
A fundamental particle with negative charge found in atoms. It has a mass of 9.11 x 1031 kilograms and a charge of - 1.6 x 10-19Coulombs.
ElectronVolt (eV)
A unit of energy, equal to the energy gained by an electron that passes through a
potential difference of 1 Volt. An electronVolt is related to the SI energy unit Joule by
the charge of the electron e as follows:
1 eV = 1.6 x 10-19 J.
\
Forward Bias
A voltage applied to a diode (a p-n junction) in a direction that does produce electric
current. When a p-n junction is forward biased, the positive terminal of a battery is
connected to the p-side of the diode, and the negative terminal to the n-side.
Intrinsic (Pure) Semiconductors
A semiconductor comprised of a single type of molecule, with no impurities. Pure
semiconductors are typically poor conductors of electricity.
Light-Emitting Diode (LED)
A diodethat has been constructed a) to optimize the emission of light as conduction
electrons and holes recombine at a p-n junction.
Neutron
A fundamental particle with no electric charge found in the nuclei of atoms. It has a
mass of 1.675 x 10-27 kilograms.
Proton
A fundamental particle with positive charge found in the nuclei of atoms. It has a
119
mass of 1.673 x 10-27 kilograms and a charge of 1.6 x 10-19 Coulombs.

Resistance (R)
The ratio between the voltage applied to a device and the electric current I that flows
through it:
R = V/I.
Reverse Bias
A voltage applied to a diode (a p-n junction) in a direction that does NOT produce
significant electric current
Transistor
An electronic switch. Transistors allow a (relatively) large amount of current to flow
when a (relatively) small voltage is applied,
Voltage (V), or Potential Difference
The change in energy per unit of electric charge, measured in the SI unit of Volt (V).
For example, a 1.0 Volt battery increases the energy of each Coulomb of charge by one
Joule
120
Bibliography
S. no. Book Name
Author
Dr A k Nagawat ,Dr S S C B H
Semiconductor physics
Publication
rawat
2
Fundamentals
of Rolf Enderlein & Norman J Springer, 2004
Semiconductor Physics and Horing

Devices
3
Semiconductor Physics:
An Introduction
LINKS:
1) Wikipedia, internet, Guru k p o etc .
Karlheinz Seeger
Springer, 2004

Semiconductor Physics, Electronic Devices and Circuits

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