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Title: Generic IC EMC Test Specification ZVEI copyright 2010
Published by:
ZVEI - Zentralverband Elektrotechnik und Elektronikindustrie e.V.
(ZVEI – German Electrical and Electronic Manufactures' Association)
Electronic Components and Systems Devision
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Photo (Cover):
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but no legal responsibility is accepted for any errors, omissions or misleading
statements in this information.
The Document and supporting materials can be found on the ZVEI website at:
www.zvei.org/ecs under the rubric "Publikationen"
TABLE OF CONTENT
Introduction 1. Scope ....................................................................................................................................... 6
2. General and objective ............................................................................................................... 6
Normative References 3. Normative reference ................................................................................................................. 7
Definitions 4. Definitions ................................................................................................................................ 8
5. Splitting ICs into IC function modules ...................................................................................... 13
5.1 Matrix for splitting ICs ......................................................................................................... 13
5.2 Example of an IC built up with IC function modules ............................................................. 14
6. Test definitions ....................................................................................................................... 15
6.1 Test methods ..................................................................................................................... 15
6.2 Test parameters ................................................................................................................. 15
6.3 DUT Monitoring .................................................................................................................. 17
Test and Measurement 7. Test and measurement selection guide ................................................................................... 18
Selection Guide 7.1 Workflow for selection and test ........................................................................................... 18
7.1.1 Conducted tests ............................................................................................................ 19
7.1.2 Identification of IC function modules .............................................................................. 19
7.1.3 Pin Selection for Emission and Immunity ........................................................................ 19
7.1.4 IC function module and the coupling or injection points .................................................. 20
7.1.5 Selection guide emission ............................................................................................... 20
7.1.6 Selection guide immunity ............................................................................................... 21
7.2 Radiated tests .................................................................................................................... 22
7.2.1 Criteria for performing radiated Emission and Immunity Tests ........................................ 22
7.2.2 Selection guide emission ............................................................................................... 22
7.2.3 Selection guide immunity ............................................................................................... 22
Test and Measurement 8. Test and measurement networks ............................................................................................. 23
Networks 8.1 Port module ........................................................................................................................ 24
8.1.1 Line Driver .................................................................................................................... 24
8.1.2 Line Receiver ................................................................................................................ 25
8.1.3 Symmetrical Line Driver ................................................................................................. 26
8.1.4 Symmetrical Line Receiver ............................................................................................ 27
8.1.5 Regional Driver ............................................................................................................. 28
8.1.6 Regional Input ............................................................................................................... 29
8.1.7 High Side driver ............................................................................................................ 30
8.1.8 Low Side driver ............................................................................................................. 32
8.2 Supply module ................................................................................................................... 34
8.3 Core module ....................................................................................................................... 35
8.4 Oscillator module ............................................................................................................... 35
8.5 Signal decoupling- and monitoring setup ............................................................................. 36
8.6 Entire IC ............................................................................................................................. 38
Functional 9. Functional Configurations and Operating Modes ..................................................................... 39
Configurations and 9.1 Emission test configuration for ICs without CPU .................................................................. 39
Operating Modes 9.2 Immunity test configuration for ICs without CPU .................................................................. 41
9.3 Emission test configuration for ICs with CPU ...................................................................... 44
9.3.1 Test initialization software module for cores containing a CPU ....................................... 44
9.3.2 Immunity test configuration for ICs with CPU ................................................................. 47
9.3.3 Test loop software module for cores containing a CPU ................................................... 48
IC EMC Test Limits 11. “Preliminary” IC EMC limits for Automotive ............................................................................ 50
11.1 Emission .......................................................................................................................... 50
11.1.1 Emission level scheme ................................................................................................ 50
11.1.2 General emission limit classes ..................................................................................... 51
11.1.3 Dedicated emission limits for 'external digital bus systems' .......................................... 53
11.2 Immunity .......................................................................................................................... 54
11.2.1 General immunity limit classes ..................................................................................... 54
Testing Documents 12. IC EMC Specification ............................................................................................................ 55
13. Test report ............................................................................................................................ 57
Terms of Usage 14. Copyrights and Liability ......................................................................................................... 58
15. Contacts and authors ............................................................................................................ 59
Annexes Annex A Layout Recommendation, (informative) ......................................................................... 60
Layout Example of 150 Ω networks on 2 layer and multi layer PCB ............................................. 60
Layout Example of 1 Ω network on 2 layer and multi layer PCB .................................................. 60
Layout Example of DPI network on 2 layer and multi layer PCB ................................................... 61
Layout Example of a TEM cell test board .................................................................................... 62
Layout Example for Digital systems built with IC types microcontrollers, RAMs ............................ 63
Annex B Test network modification (emission, normative) ........................................................... 69
Annex C Trace impedance calculation (informative) .................................................................... 71
Annex D Modulation definition (immunity, informative) ................................................................. 73
Annex E Example of an IC EMC specification (general, informative) ............................................ 74
Annex F Calculation of pin specific limits (general, informative) ................................................... 76
4
INTRO DUCT ION
Conditions of use
The use of the Generic IC EMC Test Specification is subject to the conditions of use
as stated in chapter 14.
By making use of the Generic IC EMC Test Specification the user acknowledges to
have taken notice of chapter 14 and to have agreed to the conditions of use stated in
chapter 14.
5
INTRO DUCT ION
1. Scope
The document is the technical basis to define common tests characterising the EMC behaviour
of Integrated Circuits (ICs) in terms of RF emission and immunity in the frequency range from
150 kHz to 1GHz. It contains all information to evaluate any kind of ICs in the same way. In
this document general information and definitions of IC types, pin types, test and
measurement networks, pin selection, operation modes and limit classes are given. This
allows the user to create an EMC specification for a dedicated IC as well as to provide
comparable results for comparable ICs.
to minimize test effort to get comparable test results for IC suppliers and users
6
NO RMA TIVE R EF ER ENCE
3. Normative reference
Emission:
[4] CISPR 25: Limits and methods of measurement of radio disturbance characteristics
for the protection of receivers used on board vehicles – second edition 2002-08
Immunity:
[8] IEC/TS 62228 Ed 1: 2007: Integrated circuits - EMC evaluation of CAN transceivers
7
D EF IN IT IO NS
4. Definitions
• analog
[IEV 101-12-05]
• Core
An →IC function module without any connection to outside of the IC via pins. (Note: The
supply is connected via the IC function module supply to pins, signals to pins are
connected via IC function module driver)
• digital
[IEV 101-12-07]
global pin
A 'global' pin carries a signal or power, which enters or leaves the application board
local pin
A 'local' pin carries a signal or power, which does not leave the application board. It
remains on the application PCB as a signal between two components with or without
additional EMC components.
Functional core sub-unit of the →IC function module 'Core', designed to perform one
fixed function without instruction decoding and executing capability.
• IC type
IC with a characteristic set of functions built in. These functions are realized with →IC
function modules.
8
D EF IN IT IO NS
• IC function module
An IC function module is a device functional part of an IC with at least one function and
its supply connection, if needed.
• Pin
• Port
An →IC function module containing minimum one Driver and/or minimum one Input each
connected to a signal pin.
• Active port:
• Inactive port:
• Test port:
A piece of isolating material with fixed metal traces to connect electronic components.
Supply pin pairs are all supply voltage pins of the same supply voltage system with their
related ground pin(s) of an IC supply module.
9
D EF IN IT IO NS
IC function modules
Port module
It is a set of minimum one port module 'Driver' and/or minimum one port module ´Input´.
Core Oscillator
drives signals leaving the application board (global Supply Supply
Oscillator
(PLL)
pin).
Digital Logic Digital Logic
receives signals from outside of the application Fixed-function Unit Fixed-function Unit
receives differential signals from outside of the application board with two phase-correlated
inputs (global pin)
e) Regional Driver
f) Regional Input
drives power into loads. The current flows out of the driver (local or global pin).
Examples: High side switch, Switched mode power supply current output (buck converter)
drives power into loads. The current flows into the driver (local or global pin).
10
D EF IN IT IO NS
Examples: Low side switch, Switched mode power supply current input (boost converter)
Supply module
A CPU decodes and executes instructions, can make decisions and jump to a
PLL factor
Core
Digital Logic Digital Logic b) Digital Logic Fixed-Function Unit
or analog or analog
Fixed-function Unit Fixed-function Unit
Functional core sub-unit, designed to perform one fixed core digital logic
Supply module
function without instruction decode and execute capability.
Driver or Driver or Driver or Driver or
Port Input Input Input Input
Supply Examples: Clock distribution, Memory logic and arrays, Registers, Timer,
Watchdog Timer, State Machines, Programmable Logic Arrays (PLA).
11
D EF IN IT IO NS
Functional core analog sub-unit, clocked or unclocked, designed to perform one fixed core
analog function without instruction decode and execute capability.
Examples: Hall sensor element for magnetic field sensing, E-field sensing, Acceleration
sensing. It can be combined with a precision amplifier (FFU), a supply module and a line driver
to realize an IC type "sensor".
Oscillator module
Supply module
Driver or Driver or Driver or Driver or
Port Input Input Input Input
Supply
12
SPLITTING IC S INTO IC FUNCTION MODULES
Regional Input
Line Receiver
Line Driver
Oscillator
IC type examples
Microcontrollers • • • • • • •
Analog ICs Digital ICs
RAM, ROM,
• • • •
Bus Drivers
Logic Gate ICs • • • •
Operational
(•) (•) • • • •
Amplifier
VCOs • • • • •
Sensor Circuit • (•) (•) • •
High Side
(•) • • • • (•) (•)
Power driver
Switch
Low Side
(•) • • • • (•)
Switch
Bridge (•) • • • • • (•) (•)
symmetrical
communication
• • • • • • (•) (•)
Interface driver
(e.g. CAN,
LVDS)
asymmetrical
communication
• • • • • • (•) (•)
(e.g. LIN, Single
Wire CAN)
voltage regulator,
(•) • • (•) • (•) (•)
linear
voltage regulator,
(•) • (•) • (•) • (•) (•) (•)
switch mode
ASICs any combination
• = typical configuration
(•) = additional or alternative configuration
Table 1: Matrix showing which typical IC function module is integrated in several well known
IC’s.
13
SPLITTING IC S INTO IC FUNCTION MODULES
Reginal I/O
Input Supply
Clock
input Flash / EPROM Type of memory
Port Supply Module
Digital Logic Analog
Port Module Fixed Function Unit: Fixed Function Unit:
DATA Program
Regional Clock Step up Voltage
Bus
Driver Converter
Core
Distribution Supply
Supply Module
Supply Module
I/O Port Module
I/O
Supply Reginal
Supply
Input
Selection
Signals
14
T E ST D EF INIT ION S
6. Test definitions
Receiver Analyzer
Method Frequency range
BW Step size RBW Sweep time**
150 kHz to 30 MHz 9 kHz 5 kHz 9/10kHz NP ⋅ LT ⋅ FR
1Ω
ts =
150 Ω
Measurement time: The emission measurement time at one frequency shall be minimal the
period or test software loop duration.
15
T E ST D EF INIT ION S
Step size
Method Frequency range
linear
150 kHz to 1 MHz 100 kHz
1 MHz to 10 MHz 0.5 MHz
10 MHz to 100 MHz 1MHz
TEM
DPI
DPI Immunity characteristic: The immunity diagram shows maximum RF forward power
without any monitored failure measured with increasing power up to the required limit.
TEM Immunity characteristic: The immunity diagram shows maximum field strength calculated
from the forward power (substitution method) without any monitored failures measured with
increasing field strength up to the required limit.
reduced
CW AM 80 %
carrier
reduced carrier
carrierAM = carrierCW / 1.8
am_mod_reduced_carrier.xls
16
T E ST D EF INIT ION S
Generally, all DUT functions, which are decided to be monitored, have to be checked. For
conducted immunity the DUT functions can be monitored direct or indirect at output ports. For
radiated immunity tests the distinction between direct and indirect monitoring is not possible.
All monitored signals shall be within the failure criteria of the IC EMC test specification.
Direct monitoring: The signal of the functional module at the injection point where the RF
power is applied is monitored.
Indirect monitoring: The signal of another functional module output port where the RF
power is not directly applied is monitored.
RF decoupling: RF filter are necessary to prevent the monitoring device from the
disturbance RF.
Monitoring device: The monitoring can be realized e.g. by a microcontroller (µC) test
application with a cycling test program, an
DUT Monitoring device
oscilloscope with a programmable signal
RF injection
failure
tolerance mask, a multimeter.
direct monitoring criteria
function
RF pass An example how the monitored signals
decoupling fail
can be combined to a logical sum "within
function
output signal
Failure criteria: For monitored signals failure criteria have to be defined in the
dedicated IC EMC test specification. A failure criterion is defined by its nominal signal values
and allowed tolerances. An example of a failure criteria table with typical signals is shown in
Table 6.
… …
17
T EST AND MEA SU REM ENT GU ID E
EMC Specification
Identification of all IC function modules and selection of the EMC relevant modules
(as defined in chapter 5)
Listing of all related pins and classification in local and global pins
(as defined in chapter 5)
Add radiated test methods, if criteria are met (see chapter 7.2)
EMC - Test
18
T EST AND MEA SU REM ENT GU ID E
Port modules
At a global driver pins the emission and immunity of the direct pin function, the crosstalk
behavior pin to core and the crosstalk behavior port to pin can be measured.
At a global receiver pin only the crosstalk core to pin and port to pin can be measured.
Local pin measurements are optional and should be performed only on special request or if no
pin could be defined as a global pin for measurements.
Supply modules
Core modules
The core cannot be measured directly only by crosstalk at global or local pins.
Oscillator modules
The emission of the oscillator should be measured only by crosstalk at global or local pins.
19
T EST AND MEA SU REM ENT GU ID E
Crosstalk oscillator
IC function module
Operation mode *
Oscillator module
Functional signal
(see chapter 8)
Core module
Core module
Port module
Port module
module to
Oscillator
Pin type
to
T • PM1 C1-S3
Line Driver global 8.1.1 H • CM1 C4-S2
H • OM1 C6-S0
Line Receiver global 8.1.2 IA (•) CM1 C4-S2
T • PM3 C1-S3
Sym. Line Driver global 8.1.3 IA • CM1 C4-S2
IA • OM1 C6-S0
Sym. Line
global 8.1.4 IA (•) CM1 C4-S2
Receiver
8.1.5 A T • PM5 C1-S3
H, L • CM1 C4-S2
Regional Driver local H, L • OM1 C6-S0
C1-S2
8.1.5 B H, L • PM5
C1-S3
Regional Input local 8.1.6 IA (•) CM1 C4-S2
T • PM7 C1-S3
local,
High Side Driver 8.1.7 H • CM1 C4-S2
global
H • OM1 C6-S0
T • PM8 C1-S3
local,
Low Side Driver 8.1.8 H • CM1 C4-S2
global
H • OM1 C6-S0
H • SM1 C1-S3
local,
Supply 8.2 H • CM1 C4-S2
global
H • OM1 C6-S0
20
T EST AND MEA SU REM ENT GU ID E
with CPU
Port-, Core-, Oscillator
IC function module
Oscillator module
Operation mode*
(see chapter 8)
Test network
Core module
Port module
modules
Pin type
Indirect
Direct
T PM9 CM2 OM2 C10-S3 • •
Line Driver global 8.1.1 H PM9 CM2 OM2 C10-S3 • •
IA CM3 • •
A PM10 CM2 OM2 C10-S3 •
Line Receiver global 8.1.2
IA CM3 • •
T PM11 CM2 OM2 C10-S3 • •
Sym. Line Driver global 8.1.3 IA PM11 CM2 OM2 C10-S3 • •
IA CM3 • •
A PM12 CM2 OM2 C10-S3 • •
Sym. Line Receiver global 8.1.4
IA CM3 • •
T PM13 CM2 OM2 C10-S3 • •
(H) PM13 CM2 OM2 C10-S3 • •
Regional Driver local 8.1.5 A
(L) PM13 CM2 OM2 • •
IA CM3 • •
A PM14 CM2 OM2 C10-S3 • •
Regional Input local 8.1.6
IA CM3 • •
T PM15 CM2 OM2 C10-S3 • •
local, (H) PM15 CM2 OM2 C10-S3 • •
High Side Driver 8.1.7
global (L) PM15 CM2 OM2 C10-S3 • •
IA CM3 • •
T PM16 CM2 OM2 C10-S3 • •
local, (H) PM16 CM2 OM2 C10-S3 • •
Low Side Driver 8.1.8
global (L) PM16 CM2 OM2 C10-S3 • •
IA CM3 • •
local, H SM2 CM2 OM2 C10-S3 • •
Supply 8.2
global H SM2 CM3 • •
Oscillator local 8.4 T PM9 CM2 C10-S3 • •
* Note: T = Toggle; H = static high potential, L = static low potential
A = defined active; IA = defined inactive, realized with internal or external pull up or pull down
( ) = Test is optional
21
T EST AND MEA SU REM ENT GU ID E
• the IC has a digital logic FFU or an oscillator module with an operating frequency higher
than 10MHz and a package diagonal dimension greater than 25mm
Immunity:
• the IC has an analogue FFU as sensing element working with electrical or magnetic
fields, or
• the IC has an analogue or digital FFU with charge coupled devices (CCD) for filtering
22
T E ST AND MEA SU RM ENT N ET WO RK S
23
T E ST AND MEA SU RM ENT N ET WO RK S
(Ztrace = 50 Ω)
(Ztrace = 50 Ω) RAn
Line Driver
Line Driver
CBn
IC IC
Core
Core
R1 CB2
RA2
C1 CB1
R2 RA1
© 2007 BISS R2
© 2007 BISS
Configuration A: Single Line Driver port Configuration B: Multiple Line Driver port*
*) Use circuit B, if more than one driver should be tested simultaneously (means: all driver are active) of a multiple Line Driver port.
24
T E ST AND MEA SU RM ENT N ET WO RK S
(Ztrace = 50 Ω)
Decoupling Device
RAn
Line Receiver
CBn
Zdd IC
Input Signal
Core
Cdd
Line Receiver
(Ztrace = 50 Ω) CB2
C RA2
Core
R1 CB1
C2
RA1
R2
R2
© 2007 BISS
© 2007 BISS
Configuration A: Single Line Receiver port Configuration B: Multiple Line Receiver port*
*) Use circuit B, if more than one driver are tested simultaneously of a multiple Line Receiver port.
25
T E ST AND MEA SU RM ENT N ET WO RK S
(Ztrace = 50 Ω)
Symmetrical
Line Driver
IC RA
CB
Core
RB
RA
CB
R2
© 2007 BISS
1 Termination not part of the test network, but may be needed for the symmetrical line driver
26
T E ST AND MEA SU RM ENT N ET WO RK S
(Ztrace = 50 Ω)
Line Receiver
Symmetrical
IC RA
CB
Core
RB
RA
CB
R2
© 2007 BISS
2 Termination not part of the test network, but may be needed for the symmetrical line receiver
27
T E ST AND MEA SU RM ENT N ET WO RK S
R1 RPullup/Pulldown (Ztrace = 50 Ω)
RPullup VDD/ GND
Regional Driver
C1 C1
Regional Ports
R2
IC R1
Core
VDD/ GND
Core
1 (Ztrace = 50 Ω)
RPulldown R3 R2
VDD/ GND
49 Ω C2
R4
1Ω
CLOAD
Z=f(Cload, RPullup/Pulldown) © 2007 BISS
© 2007 BISS 1 Ω Probe 2
28
T E ST AND MEA SU RM ENT N ET WO RK S
Decoupling Device
Zdd
Input Signal
Regional Input
(Ztrace = 50 Ω)
Cdd
IC
Core
R1
C2
R2
© 2007 BISS
29
T E ST AND MEA SU RM ENT N ET WO RK S
(Ztrace = 50 Ω)
supply
R1
(Ztrace = 150 Ω) C1
High Side
IC output R2
Driver
Core
LBAN 1
reference
RLoad
RBAN
C2
CBAN
© 2007 BISS
Configuration high side driver / linear voltage regulator
IC output R2
Driver
Core
L1 LBAN 1
reference
RLoad
RBAN 49 Ω
D1
C2
1Ω
CBAN
© 2007 BISS 1 Ω Probe 2
30
T E ST AND MEA SU RM ENT N ET WO RK S
31
T E ST AND MEA SU RM ENT N ET WO RK S
VSupply
1 Decoupling and coupling network
2 1Ω decoupling network
RLoad,1
supply
LBAN1 (Ztrace = 50 Ω)
(Ztrace = 150 Ω)
Low Side
output
Driver
Core
R1
C1
reference R2
49 Ω
1
RBAN1
1Ω
CBAN1
1 Ω Probe 2 © 2007 BISS
Configuration Low Side Driver
R1
LBAN1 C1
R2
supply
1
C3 L1 (Ztrace = 150 Ω) (Ztrace = 50 Ω)
Low Side
C output
Driver
Core
R3
D1 LBAN2 C2
reference R4
C4 RLoad,2
RBAN1 1
RBAN2
CBAN1 CBAN2
© 2007 BISS
Configuration switched mode power supply
32
T E ST AND MEA SU RM ENT N ET WO RK S
33
T E ST AND MEA SU RM ENT N ET WO RK S
Vsupply
C1
CD1 R2
Function module
Function module
VS2..n
CD1
IC VGND1 (Ztrace = 50 Ω)
VSx RBAN1 VGND2..n
CBAN1 R3
VSx
C2
VGNDx CBAN1 VGNDx CDX RBANx R4
© 2007 BISS
CBANx
Vsupply(1) Vsupply(X)
© 2007 BISS
Vsupply(1) Vsupply(x) (Ztrace = 50 Ω) LBAN1 LBANX
© 2007 BISS
LBAN1 LBANx R1 VS1
Function module supply
C1
R2 CD1 CDX
Function module
Function module supply
VS1
RBAN1 VGND1
Function module
CD1 IC 49 Ω
IC VGND1 (Ztrace = 50 Ω)
1Ω
VSx
CBAN1 R3
VSx
C2
VGNDx CDX RBANx R4 VGNDx 1 Ω Probe
CBANx
34
T E ST AND MEA SU RM ENT N ET WO RK S
(Ztrace = 50Ω)
JMP1
Output
R1 R3
Oscillator
IC C1
Core
quartz
(Ztrace = 50Ω)
Input
JMP2
R2 R4
C2
© 2007 BISS
3 The internal impedance of the connected RF system substitutes the 50 Ω of the jumper plug.
35
T E ST AND MEA SU RM ENT N ET WO RK S
supply
to supply network
in-/ 2
Port/Supply/
Oscillatore
IC output
Module
to load network /
Core
from signal source
1
reference
R1
Ulowpass,in Ulowpass, out
C1
© 2007 BISS
Base of calculation:
U lowpass ,out 1
Transfer ratio: a= =
U lowpass ,in 1 + j 2πfR1 ⋅ C1
Limit for the magnitude of the transfer ratio < -20 dB, requires R 1 > 400 Ω in the test frequency
range
36
T E ST AND MEA SU RM ENT N ET WO RK S
-10
R=400Ohm, C=0.5nF
-20 R=400Ohm, C=10nF
R=1kOhm, C=1nF
R=6.8kOhm, C=2nF
transfer ratio / dB -30 R=10kOhm, C=6.8nF
-40
-50
-60
-70
-80
transfer function chart for examples for different
values of R1, C1
-90
for direct and indirect monitoring
-100
0,01 0,1 1 10 100 1000
frequency f / MHz
Figure 7, Decoupling network for monitoring: transfer function charts for low pass circuitry
examples
37
T E ST AND MEA SU RM ENT N ET WO RK S
8.6 Entire IC
The measurement of radiated electromagnetic fields and the immunity against electromagnetic
fields are measured according [2], [6] with the (G)TEM cell.
With the (G)TEM Cell the field coupling between the IC structure and the (G)TEM cell septum
is measured. Therefore the IC is mounted on one side of the test board, which is oriented to
the septum of the (G)TEM cell. All the other circuit elements are located on the other side of
the test board and therefore outside of the (G)TEM Cell.
(G)TEM cell measurements have to be performed in minimum two orientations with 90°
difference in the x- and y- plane. The data sets shall be documented separately for each
direction.
Direction X Direction Y
Pin 1
Pin 1
Figure 8: Example of "Direction X" and "Direction Y" of TEM cell test PCB
38
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
PM5 with the maximum frequency and the shortest switching time as specified in the
IC Data Sheet. The duty cycle should be set to 50%. If there is a function
integrated to use EMC optimized operation modes they should be measured
39
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
additionally.
For core cross coupling noise measurement the regional driver has to be set in a
permanent high state to measure effects caused by internal periodical sources.
This measurement should be performed only if a cross coupling by internal
periodical sources with frequencies above 1MHz is expected.
To measure the pin to pin cross coupling noise caused by the neighborhood pins
the measured pin shall be set at high level and the neighborhood pins shall
operate with the maximum frequency and the shortest switching time as specified
in the IC Data Sheet. The duty cycle should be set to 50%.
Regional Input
For core cross coupling noise measurement the regional input shall stay in the
PM6 default state to measure effects caused by internal periodical sources. This
measurement should be performed only if a cross coupling by internal periodical
sources with frequencies above 1MHz is expected.
High Side driver
To measure the direct switching noise of a high side driver the driver shall
operate with the maximum frequency and the shortest switching time as specified
in the IC Data Sheet. The switching time should take less than 1% of the
switching period. The duty cycle should be set to 50%. If there is a function
PM7 integrated to use EMC optimized operation modes they should be measured
additionally with the same frequency as before.
For core cross coupling noise measurement the high side driver has to be set in
a permanent high state to measure effects caused by internal periodical sources.
This measurement should be performed only if a cross coupling by internal
periodical sources with frequencies above 1MHz is expected.
Low Side driver
To measure the direct switching noise of a low side driver the driver shall operate
with the maximum frequency and the shortest switching time as specified in the
IC Data Sheet. The switching time should take less than 1% of the switching
period. The duty cycle should be set to 50%. If there is a function integrated to
PM8 use EMC optimized operation modes they should be measured additionally with
the same frequency as before.
For core cross coupling noise measurement the low side driver has to be set in a
permanent high state to measure effects caused by internal periodical sources.
This measurement should be performed only if a cross coupling by internal
periodical sources with frequencies above 1MHz is expected.
To measure the emission on the supply the IC shall be powered as for normal
module
Supply
operation. All modules shall operate as defined for normal operation according
SM1
data sheet. All internal periodical sources shall be active and operate with
maximum frequency and power.
The core module shall operate as defined for normal IC function. All internal
module
Core
CM1 periodical sources shall be active and operate with maximum frequency and
power.
Oscillator
module
Table 22, Emission test configuration for ICs without CPU, continued
40
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
41
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
Regional Driver
To measure the immunity of a regional driver three functional operation modes
are possible. The test shall be performed at least in the toggling mode with a
typical frequency and the typical switching time as specified in the IC Data Sheet.
The duty cycle should be set to 50%. Optionally the driver can be tested in a
PM13 permanent High state and/or Low state.
For all operation modes the functionality shall be monitored directly at the
regional driver pin and indirectly at another functional module output port of the
IC to detect cross coupling effects to other FFUs.
If there is a function integrated to use EMC optimized operation modes they
should be tested additionally.
Regional Input
To measure the immunity of a regional input the input has to be set in an active
mode.
PM14 The monitoring shall be done indirectly at another functional module output port
of the IC to detect cross coupling effects to other FFUs. There is no possibility to
distinguish between the immunity behavior of the input and cross coupling effects
into other FFUs.
Port Modules
SM2 data sheet. All internal periodical sources shall be active and operate with
Supply
42
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
Core module
functions shall be active and operate with typical frequency and power.
Core sleep modes
CM3 If it is possible to set the IC in other modes different to the normal mode such as
sleep mode, standby mode etc. they should be tested additionally.
Oscillator
OM2
and power as specified.
Table 23, Immunity test configuration for ICs without CPU, continued.
43
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
Description
Number
Name
44
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
system clock
Active ports: - buses
C3 - fastest slew rate of drivers
2
Inactive Ports: - all other ports
- bus clock (System clock output inactive)
Memory access: - memory access for the loop software
module: asynchronous access from
external memory
System clock: - frequency = fmax
On-chip execution without
CPU: - active
system clock output
45
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
Oscillator
FFUs: - all Fixed-function Units functionally
C6 inactive and unclocked
Active ports: - none
Inactive Ports: - all ports
Memory access: - memory access for the loop software
module: none
System clock: - frequency = fmax
- maximum clock tree frequency in clock
Active Clock Tree Mode
tree distribution
CPU: - inactive ('wait' mode, 'hold' mode), if
Clock Tree
available
C7 FFUs: - all Fixed-function Units clocked, but
functionally inactive
Active ports: - none
Inactive Ports: - all ports
Memory access: - memory access for the loop software
module: none
System clock: - frequency = fmax
CPU: - minimum required activity
FFUs: - all Fixed-function Units inactive, except
the FFU under investigation
Active ports: - controlled ports by FFU under
investigation
Inactive Ports: - all other ports
Test single FFU
reduced system
frequency
frequency
C9
combined with Configuration Modules C1..C8
Table 24, Test initialization software module for cores containing a CPU, continued.
46
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
Descrip-
Number
Name
Short
tion
System clock:
- frequency = fmax
- active CPU:
FFUs:
- all Fixed-function Units active, if
available: system clock output active
Active ports: - all multifunction ports switched to FFU
function
- fastest slew rate of drivers
Inactive Ports: - all other ports
Monitor pin: - a pin of a non-multifunction port without
FFU function, toggle signal with fixed
relation to system clock (constant
Functional ‘Worst case’ setting
frequency), CPU-driven
Immunity Reference
available
FFUs: - all Fixed-function Units functionally
inactive and unclocked
Oscillator
47
FU NT IONAL CO NFIG URAT ION S AN D O PERAT ING MOD ES
memory vector
10 % Lower
+1 increment
memory
area
010101010...
101010101...
Lower memory limit
48
T EST BOA RD
In general all ground areas have to be connected to a common ground system with low
impedance.
For conducted measurements the geometry of the board may have any rectangular or circular
shape. This is dependent on the IC specific application and necessary additional components,
measuring- and decoupling networks. The DUT and all mandatory components needed to
operate the DUT, as described in the data sheet or application note should be mounted onto
the topside of the test board. As much wiring as possible should be routed in the top layer.
The device under test should be placed in the centre of the PCB, while the needed matching
networks should be placed around this centre. The wiring between the IC pins and the
matching network should be as short as possible. A trace length equal to 1/20 of the shortest
wave length (1 GHz) applied is a reasonable target. The wiring of the outputs of the matching
networks should be designed to have a line impedance of 50 Ω connected with a RF-
connector (e.g. SMA or SMB) at the end. In case that the 1Ω -Method is used a socket for the
RF current probe should be used. The shield of the RF current probe tip shall be connected to
RF- peripheral ground by the socket, while the measured IC Pin is connected to the current
probe tip. The connection between the IC Pin and the probe tip should be as short as possible.
In any case the trace length should not exceed 15 mm (at 1 GHz upper frequency range limit).
In general the transfer characteristic of each RF measurement point at the test board including
all functional, decoupling and measuring components without the DUT shall be measured and
documented in the test report. The DUT has to be substituted by 50 Ω resistors to ground at
the DUT pin pads.
For radiated measurements the geometry of the board is given by the hole in the TEM cell
where the board has to fit in. To fulfill the requirements of the application on such a limited
board a more layer board should be used. In any case the DUT has to be mounted onto the
bottom side with the common ground plane.
In “Annex-A” some examples of board layouts for 150 Ω -, 1 Ω - , DPI- and TEM-cell testing
are shown.
49
I C E MC L IM IT S
The currently defined limits are based on a small data base and must be updated if more
experience is collected. Therefore they are for orientation at the moment.
The limit classes are different depending on the requirements given by the application. The
application EMC effort is defined by the application itself, ECU housing, number of layers, filters
elements etc.
11.1 Emission
11.1.1 Emission level scheme
The following level scheme can be used to describe the emission of ICs in a simplified way.
84 A
1
78 B 2
3
72 C
4
66 D 5
6
60 E
7
54 F 8 a
[Voltage] dBµV
9 b
48 G c
10 d
e
42 H 11 f
g
12
36 I i h
13 k
30 K l
14 m
n
15
24 L po
16 q
18 M r
17 s
18 u t
12 N v
19 w
6 O x
y
z
0
0,01 0,1 1 10 100 1000
[frequency] MHz
Toggling digital data pins, periodically switching analogue power outputs etc. generate
switching harmonics as a matter of principle. This may violate emission requirements in terms
of standard limit classes but cannot be avoided by IC design measures for functional reasons.
50
I C E MC L IM IT S
The resulting spectrum can be calculated by Fourier transformation of the functional specified
signal waveform as described in Annex F. This calculated spectrum describes the limitation of
the minimal emission and has to be considered to define superimposed specific limits for
those pins.
51
I C E MC L IM IT S
Conducted emission 150Ω method limit line set for all IC function modules
102 102
96 96
90 90
6
84 84
78 78
8 8
72 72
66 66
[Voltage] dBµV
[Voltage] dBµV
10 10
60 60 Class I
F
54 54
12
48 Class I 48 Class II
H H
42 42
36 Class II 36 Class III
K K
30 30
24 24
M Class III
18 18
12 12
6 6
0.1 1 10 100 1000 0.1 1 10 100 1000
0,15 0,15
[frequency] MHz [frequency] MHz
Figure 10: Limit line set for global pins Figure 11: Limit line set for local pins
Conducted emission 1Ω method limit line set for all IC function modules
96 96
90 90
84 84
78 78
8
72 72
66 66
10 10
60 60
[Voltage] dBµV
[Voltage] dBµV
54 54
12 12
48 48
H Class I
42 42
14
36 36 K Class II
K Class I
30 30
24 Class II 24 Class III
M M
18 18
12 Class III 12
O
6 6
0 0
0.1 1 10 100 1000 0.1 1 10 100 1000
0,15 0,15
[frequency] MHz [frequency] MHz
Figure 12: Limit line set for global pins Figure 13: Limit line set for local pins
Radiated emission TEM cell method limit line set for dedicated IC types (see chapter 7.1.1)
84
78
72
66
60
54
[Voltage] dBµV
48
42 Class I
I
36
30 Class II
L
24
18 Class III
N
12
6
0
0,15
0,1 1 10 100 1000
[frequency] MHz
52
I C E MC L IM IT S
90
80
0.15 MHz
69.31 dBµV
70
60
Figure 15,
[value] dBµV
100 MHz
50 45 dBµV
300 MHz
Conducted 10 MHz
39 dBµV
40
emission 150 Ω 45 dBµV
10
0
0.15
0,1 1 10 100 1000
[frequency] MHz
90
80
70
0.15 MHz
59.3 dBµV
60
Figure 16,
[value] dBµV
50
Conducted 100 MHz
40 35 dBµV
emission 150 Ω 300 MHz
29 dBµV
10 MHz
limit Supply pins 30 35 dBµV
20
600 MHz
20 dBµV
10
0
0,1 0.15 1 10 100 1000
[frequency] MHz
90
80
70
60
[value] dBµV
50
Figure 17, 0.15 MHz 100 MHz
TEM cell limit 40 35 dBµV 35 dBµV 300 MHz
Microcontroller
29 dBµV
30
20
600 MHz
20 dBµV
10
0
0.15
0,1 1 10 100 1000
[frequency] MHz
53
I C E MC L IM IT S
11.2 Immunity
11.2.1 General immunity limit classes
DPI TEM
Immunity limit classes [forward power] dBm [E-field] V/m
global pin local pin entire IC
I 18 0 200
II 24 6 400
III 30 12 800
C customer specific
Table 28, General immunity limit classes
Conducted immunity DPI method limit line set for all IC function modules
42 42
39 39
36 36
33 30 dBm Class III 33
30 30
[foreward power] dBm
27 24 dBm Class II 27
24 24
21 21
18 dBm Class I
18 18
15 15 12 dBm Class III
12 12
9 9 6 dBm Class II
6 6
3 3 Class I
0 dBm
0 0
-3 -3
0,15 0,15
0,1 1 10 100 1000 0,1 1 10 100 1000
[frequency] MHz [frequency] MHz
Figure 18: Limit line set for global pins Figure 19: Limit line set for local pins
Radiated immunity TEM cell method limit line set for dedicated IC types (see chapter 7.2.1)
1000
900
Class III
800
700
600
[E-field] V/m
500
Class II
400
300
Class I
200
100
0
0,15
0,1 1 10 100 1000
[frequency] MHz
54
I C EMC SPEC IF ICA TIO N
Emission
Operation Mode*
core crosstalk
osc. crosstalk
port crosstalk
Configuration
IC function
Functional
Pin Type
(global/local)
module
150 Ω
direct
TEM
1Ω
Name
No.:
Function
Example:
System clock Regional
local C1-S2 T III
output driver
Regional
Data bus local C1-S2 T III
driver
Regional
Address bus local C1-S2 T III
driver
Regional
ALE signal pin local C1-S2 T III
driver
All Chip select Regional
local C1-S2 T III
(CS) driver
Regional
Read (R) local C1-S2 T III
driver
Regional
Write (W) local C1-S2 T III
driver
* Note: T = Toggle; H = static high potential, L = static low potential
A = defined active; IA = defined inactive, realized with internal or external pull up or pull down
55
I C EMC SPEC IF ICA TIO N
Immunity
Functional Configuration
Operation Mode*
Failure criteria
(global/local)
TEM
DPI
Port IC function
Pin Type
Function
Function
module
Name
Name
No.
No.
CW AM CW AM
Example:
Regional C1-S2 A I/O Port 1 III
Reset local
Input C1-S2 A Reset 2 III
III
Regional CLK out or
PLL-freq1..x local C1-S2 A 1 III
Input toggling port
III
Failure criteria
56
T EST R EPORT
• Result diagrams (Emission: scaled in dBµV and all limit lines, Immunity: scaled in
dBm for DPI or V/m for TEM with target value lines, as shown as figures in chapter
11)
57
CO PYR IGHTS AND L IAB IL IT Y
Copyrights:
§1 With respect to the Specification Document sent in the form of either paper or data, the
companies Bosch, Continental and Infineon provide this specification to their respective
business partners and any other third parties according to the following conditions. All
interested users may:
§1.1 use the Specification Document in terms of the specification for the compilation and
implementation of the IC Tests and incorporate the Specification Document into their
respective in-house specifications with the existing copyright notices;
§1.2 publish, subject to the protection of the copyright notices, the Specification
Documentation free of charge;
§1.3 revise or further develop the Specification Documentation. In this case, any changes have
to be made visible as such; and
§1.4 make the Specification Document available to their respective business partners (in the
form of paper or data) subject to the aforementioned conditions.
§2 Any user shall point out to its respective business partners or any interested third party
that the copyright notices which are found on the Specification Document and which exist
for the benefit of the Bosch, Continental and Infineon, may not be removed or modified by
such business partners or any other third party; this also applies in cases of revisions or
further developments thereto.
§3 Any user shall point out to its respective business partners or any interested third party
that utilization of the Specification Document by them or by their respective business
partners or any other third party on a remunerative basis is not permitted.
Liability:
§ 1 Bosch, Continental and Infineon are liable without limitation for deliberate acts and acts
committed with gross negligence.
§ 2 With the exception of injuries to life, body and health, Bosch, Continental and Infineon are
liable for acts committed with slight negligence only insofar as principal obligations with
regard to the providing of the Specification Document are infringed. Also, liability is
restricted to the typical and foreseeable damages.
§ 3 Liability for indirect and unforeseeable damages, for standstill of production and recovery
for loss of use, loss of data, lost profits as well as expenses incurred for development,
supplementary labour or product recall as well as pure economic loss due to third-party
claims are excluded in the event of slight negligence.
§ 4 Further liability in excess of what is specified herein is excluded regardless of the legal
nature of the claim asserted.
58
A NN E XES
Dr. Joerg Brueckner, Dr. Wolfgang Pfaff, Herman Roozenbeek, Andreas Rupp
Continental:
59
A NN E XES
Annex A
Layout Recommendation,
(informative)
Several networks
Layout Example of 150 Ω networks on 2 layer and multi layer PCB
Signal or supply to IC pin Signal or supply to IC pin
50 Ω micro stripline 50 Ω micro stripline
length < λ/20 length < λ/20
DUT on bottom side Components as close SMA or SMB connector DUT on bottom side Components as close SMA or SMB connector
together as possible on top side together as possible on top side
• The impedance of the signal island at the IC pin is not 150 Ω, but can be neglected as it is as small as possible.
Notes
: • This layout recommendation can be configured to perform Direct Power Injection (DPI) according IEC62132-4.
• The distance of the 50 Ω trace edges to the ground copper edges on the same layer should be minimum twice of the
distance between the 50 Ω trace and the ground plane underneath the trace.
Figure 21, Layout recommendation 150 Ω network
Conducted emission
1 Ω method
VSupply Pin
VSupply Pin CDecoupling
CDecoupling
IC-ground-pin 1 Ω Probe
IC-ground-pin
IC-ground-pin
1Ω
Ground
island Signal
ground
60
NOT ES
DUT on bottom side Components as close SMA or SMB connector DUT on bottom side Components as close SMA or SMB connector
together as possible on top side together as possible on top side
ZX e.g.: Inductance or resistor for supply/ ZX e.g.: Inductance or resistor for supply/
signal line/circuit decoupling signal line/circuit decoupling
CX e.g.: Output mode load capacitor or CX e.g.: Output mode load capacitor or
supply buffer capacitor supply buffer capacitor
• The impedance of signal island at the IC pin is not 50 Ω, but can be neglected as it is as small as possible.
Notes:
• This layout recommendation can be configured to perform Conducted Emissions according IEC61967-4.
• The distance of the 50 Ω trace edges to the ground copper edges on the same layer should be minimum twice of
the distance between the 50 Ω trace and the ground plane underneath the trace.
Figure 23, Layout recommendation DPI network
61
A NN E XES
GND-Vias
GND
DUT
GND Tin-coated
103,00 mm
62
NOT ES
Component-side
1 Component Side 0.063 mm components + wiring
Insulation 0.200 mm
Insulation 0.200 mm
4 Inner 3 0.035 mm empty (optional) plane
Insulation 0.200 mm
Insulation
u-Via 0.250 mm
DUT- or TEM-Side
µ-Via: hole diameter = 100 µm and pad diameter = 300 µm
Small Via: hole diameter = 250 µm and pad diameter = 500 µm
Standard Via: hole diameter = 300 µm and pad diameter = 800 µm
Min. trace width 160 µm and Cu-thickness 35 µm
Figure 25, Recommended layer stack up of a test board for digital systems built of IC
types microcontrollers, RAMs and flashes
Multi method test board
For combined test boards for radiated and conducted tests (conducted emission and DPI) the
conducted measurement points and adaptation networks with RF connectors at port pins and
supply lines should be realized on the component side of the PCB. Every port pin and every
independent power supply that has to be measured needs an adaptation network and a RF
connector (e.g. SMA or SMB). Add the conducted test method networks to this board
according the previous chapter.
63
A NN E XES
Digital system built with IC types Microcontrollers, RAM and Flash: PCB
requirements and some layout hints for combined radiated and conducted
methods test board.
Component side:
To prevent unwanted resonances in the supply system, the wiring recommendation of the different
PCB-layers should be followed. Every supply-island is connected with two SMB-jackets. One jacket
is used for measuring the supply voltage according to the 150 Ohm method in our example
BUVDD2V6 for the external-bus/Flash supply-island and BUVDD1V5 for the core supply-island.
The other jacket which is directly connected with the corresponding supply-island is used for
measuring the impedance of the supply-island and the transfer impedance between the supply-
islands. In our example BVDD2V6 for the external-bus/Flash supply-island and BVDD1V5 for the
core supply-island.
64
NOT ES
An integrated voltage regulator has to be placed on the test-board too. Separated supply-lines
to the different islands and component units should be used. Only plated-through holes
through all layers and no partial vias shall be used for ground connections. For all other
connections only partial vias are allowed. Bus wiring should be limited on component- and
innerlayer1 only. Any wiring between core decoupling capacitors at the component side should
be prevented.
The supply-islands are connected by a special land to the supply-line at the component side,
which makes it possible to separate the island from the supply line very easily. Such a land is
shown below in a picture detail of the component side layer.
The core supply-island and the core supply-line from the voltage regulator to the core-island
should be at layer i1 only. Above layer i1 should be no wiring of external address- data- and
bus control-signals
65
A NN E XES
Inner layer 2 should be a ground layer only without any exceptions. Ground vias are basically
connected with all layers as far as possible.
Inner layer 3:
The external-bus/Flash supply-island can be placed more favorable at the inner layer 3 as at
inner layer 4, because at i4 a little bit of wiring has to be done caused by the use of partial
vias.
66
NOT ES
Inner layer 4:
A minimum of wiring should be under the supply-island of i3. The wiring of the clock out signal
should be between two ground areas in this layer only. USB-Bus traces for communication
purposes are shown in this layer also.
Only absolute minimum of wiring should be performed at this layer. Only the DUT in our example a
microcontroller should be mounted at this layer.
67
A NN E XES
Summary of the placement of components and wiring of the combined TEM cell/conducted
emission-Test board:
Component-side
Components +
Buswiring +
Mainwiring
I1- Buswiring +
Supply-Island for
Microcontroller +
Mainwiring
I2 - Groundplane only
I3 - Supply-Island
external Bus only
I4 - Clockout +
Communication with
Microcontroller
Solder Side-Ground +
Microcontroller
DUT-or TEM-side
68
NOT ES
Annex B
Test network modification
(emission, normative)
Calculation of new start frequency in case of modifying the coupling capacitor of the 150 Ω
measuring network
Base of calculation:
U highpass ,out Z in 1
transfer ratio highpass voltage divider a= = ; limit definition a −3 dB =
U highpass ,in Z out 2
. (A1)
4π f C
2 2 2
1
f −3dB MHz ≈ (A3)
844 Ω ⋅ C µF
-15
- 3 dB
-18
[|transfer ration|] dB
6.8 nF
1 nF
-21
100 pF
50 pF
120 Ω
Uin XC =
1
2πf
-24
51 Ω 50 Ω Uout
-27
0,1 1 10 100 1000
[frequency] MHz
Figure 34, 150 Ω network, attenuation chart of some example capacitor values
69
A NN E XES
Value of 150 Ω network DC block capacitor Lower limit frequency (-3 dB)
6.8 nF * 174 kHz
1 nF 1.2 MHz
100 pF 12 MHz
68 pF 17 MHz
50 pF 24 MHz
33 pF 36 MHz
*) Note: (default value according IEC standard)
Table 33, Limit frequencies of modified DC block capacitor values in 150 Ω network
70
NOT ES
Annex C
Trace impedance calculation
(informative)
Equations for calculating Micro Stripline impedances (informative)
Source of this annex part: Hall/Hall/McCall, 'High Speed Digital System Design',
issue 2000, ISBN 0-471-36090-2
"These equations should be used only when a field simulator is not available. A field simulator
is required for the most accurate results."
Microstrip
87 ⎛ 5.98 H ⎞
Z0 ≈ ln⎜ ⎟ (B1)
ε r + 1.41 ⎝ 0.8W + T ⎠
W
Valid when 0.1 < < 2.0 and 1 < ε r < 15
H
W
T
H εr
Note: The distance of the 50 Ω trace edges to the ground copper edges on the same layer
should be minimum twice of the distance H between the 50 Ω trace and the ground
plane underneath the trace.
Please consider furthermore that in case of ground copper edges on the same layer
the impedance is influenced if varnish is on the PCB surface, too.
Symmetric Stripline
60 ⎛ 4H ⎞
Z 0, sym ≈ ln⎜⎜ ⎟ (B2)
ε r ⎝ 0.67π (T + 0.8W ) ⎟⎠
W T
Valid when < 0.35 and < 0.25
H H
W
H T
εr
71
A NN E XES
Offset Stripline
"The impedance for an offset stripline is calculated from the results of the symmetrical strip
line formulas. The reader should note that this formula is an approximation and the accuracy
of the results should be treated as such. For more accurate results, use a filed solver."
B W
T
A εr
Note: The distance of the 50 Ω trace edges to the ground copper edges on the same layer
should be minimum of the same distance as the distance H/2 (Figure 36) or B (Figure
37) between the 50 Ω trace and the ground plane underneath/above the trace.
72
NOT ES
Annex D
Modulation definition
(immunity, informative)
Source: According ISO 11452-1, Annex B (informative):
This annex explains the principle of constant Note: The total power is the sum of the
peak test level. power in the carrier component and the
power in the side-frequency component.
The electric filed strength of a continuous
wave signal, ECW , may be written in the form The peak test level conversation may be
written
ECW = E × cos(ωt ) ECWpeak = E AMpeak
73
A NN E XES
Annex E
Example of an IC EMC specification (general, informative)
IC type with CPU, Emission
osc. crosstalk
port crosstalk
Configuration
(global/local)
Pin (if available)
IC function
Functional
Operation
crosstalk
Pin Type
module
Mode*
150 Ω
direct
TEM
core
1Ω
Name
No.:
Function
74
NOT ES
Configuration Mode*
Port IC function module
Operation Mode*
Failure criteria
(global/local)
TEM
DPI
Pin Type
Function
Function
Name
Name
No.
No.
C C
AM AM
W W
Regional C1 S2 I/O Port 1 III
Reset local
Input C1 S2 Reset 2 III
PLL configuration pins
CLK out or III
PLL- Regional
local C1 S2 toggling 1 III
freq1..x Input
port III
Oscillator
Xtal1 local CLK out or III
Osc C12 S3 toggling 1
Xtal2 local port III
Supplies
Vcc_core1..
Supply global C1 S2 I/O Port 1 III
x
CLK out or
Vcc_osc Supply global C12 S3 toggling 1 III
port
Vcc_I/O Supply global C5 S3 I/O Port 1 III
Supply global
* Note: T = Toggle; H = static high potential, L = static low potential
A = defined active; IA = defined inactive, realised with internal or external pull up or pull down
Failure criteria
75
A NN E XES
Annex F
Calculation of pin specific limits (general, informative)
Fourier transformation of time domain signals
Toggling digital data pins or periodically switching analogue power outputs generate switching
harmonics as a matter of principle defined by the functional necessary and specified signal
waveform.
The resulting harmonics of those wanted signal waveforms can be calculated with Fourier-
transformation. For trapezoidal periodic signals as shown in Figure 38, the envelope of the
resulting amplitude versus frequency spectrum can be subdivided into 3 sections. From the
fundamental frequency of the signal up to the first corner frequency fg1 the spectral response
is parallel with the frequency axis. After the first corner frequency fg1 the amplitudes diminish
by 20dB/decade up to the second corner frequency f g2, from which point the spectrum falls off
at 40dB/decade, as shown in Figure 39. The simplified equations to calculate amplitudes and
corner frequencies of the spectrum are depicted for the sections in Figure 39. AO is defined as
the amplitude of original signal (I or V), ti as the signal pulse width, ts as the switching time, T O
as the period of the fundamental frequency and n as the multiples of the fundamental
frequency.
-30
fg2
[Amplitude] dB
-40
2 1 T0
An ≈ A0
-50 π 2 n 2 ts
-40 dB
-60
-70
-80
-90
0,1 1 1
fg 1 = 1 10 fg 2 = 100 1000
π ti π ts
Frequency
76
NOT ES
Notes:
77
ZVEI - Zentralverband Elektrotechnik-
und Elektronikindustrie e.V.
Fachverband Electronic Components and
Systems
Lyoner Str. 9
60528 Frankfurt am Main
Fon: 069 6302-465
Fax: 069 6302-407
Mail: zvei-be@zvei.org
www.zvei.org