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RailClamp
Low Capacitance TVS Diode Array
PROTECTION PRODUCTS
Description
Features
Mechanical Characteristics
Applications
Circuit Diagram
I/O 1 1
GND
I/O 2 2
I/O 6
+VREF 3
I/O 5
I/O 3 4
I/O 4
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Symbol
Value
Units
Pp k
500
Watts
VFP
1.5
Operating Temperature
TJ
-55 to +125
TSTG
-55 to +150
Storage Temperature
Symbol
Conditions
Minimum
Typical
VRWM
Maximum
Units
3.3
Punch-Through Voltage
V PT
IPT = 2A
3.5
Snap-Back Voltage
VSB
ISB = 50mA
2.8
IR
Clamping Voltage
VC
5.3
Clamping Voltage
VC
10
Clamping Voltage
VC
15
IP P
tp = 8/20s
25
Junction Capacitance
Cj
15
pF
pF
Note:
(1) The SRDA3.3-6 is constructed using Semtechs proprietary EPD process technology. See applications section for
more information.
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Symbol
Conditions
Minimum
Typical
Maximum
Units
VRWM
V BR
It = 1mA
IR
10
VC
9.8
VC
12
VC
20
IP P
tp = 8/20s
25
Cj
15
pF
pF
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10
110
% of Rated Power or PI P
100
0.1
90
80
70
60
50
40
30
20
10
0
0.01
0.1
10
100
1000
25
50
125
150
16
110
Waveform
Parameters:
tr = 8s
td = 20s
90
80
70
-t
60
50
40
SRDA05-6
14
Clamping Voltage - VC (V)
100
Percent of IPP
100
Pulse Waveform
td = IPP/2
30
20
12
10
SRDA3.3-6
8
6
Waveform
Parameters:
tr = 8s
td = 20s
4
2
10
0
0
10
15
20
25
30
10
15
20
25
30
Time (s)
10
9
Forward Voltage - VF (V)
-2
% Change in Capacitance
75
-4
-6
-8
-10
-12
8
7
6
5
4
3
Waveform
Parameters:
tr = 8s
td = 20s
2
1
-14
0
0
10
15
20
25
30
35
40
45
50
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IPP
ISB
IPT
VBRR
VRWM
VSB VPT VC
IBRR
IR
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CC
= Descriptions
-V
(for negative duration pulses)
V
PIN
C
CC
V = -V - L di
C
ESD
/dt
ESD
ESD
Example:
Consider a V = 5V, a typical V of 30V (at 30A) for the
CC
F
steering diode and a series trace inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
Figure 2 - The Effects of Parasitic Inductance When
Using Discrete Components to Implement Rail-To-Rail
Protection
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
the high V of the discrete diode. It is not uncommon
F
for the V of discrete diodes to exceed the damage
F
threshold of the protected IC. This is due to the
relatively small junction area of typical discrete components. It is also possible that the power dissipation
capability of the discrete diode will be exceeded, thus
destroying the device.
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamps integrated TVS diode
helps to mitigate the effects of parasitic inductance in
the power supply connection. During an ESD event,
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F(RailClamp)
+V
TVS
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e
N
DIM
2X E/2
E1 E
GAGE
PLANE
1
0.25
ccc C
2X N/2 TIPS
A
A1
A2
b
c
D
E1
E
e
h
L
L1
N
01
aaa
bbb
ccc
L
(L1)
e/2
DETAIL
01
D
aaa C
A2 A
SEATING
PLANE
.053
.069
.004
.010
.049
.065
.012
.020
.010
.007
.189 .193 .197
.150 .154 .157
.236 BSC
.050 BSC
.010
.020
.016 .028 .041
(.041)
8
8
0
.004
.010
.008
1.75
1.35
0.10
0.25
1.25
1.65
0.31
0.51
0.17
0.25
4.80 4.90 5.00
3.80 3.90 4.00
6.00 BSC
1.27 BSC
0.25
0.50
0.40 0.72 1.04
(1.04)
8
0
8
0.10
0.25
0.20
SIDE VIEW
A1
bxN
bbb
SEE DETAIL
DIMENSIONS
INCHES
MILLIMETERS
MIN NOM MAX MIN NOM MAX
C A-B D
NOTES:
1.
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
4. REFERENCE JEDEC STD MS-012, VARIATION AA.
DIM
(C)
C
G
P
X
Y
Z
DIMENSIONS
INCHES
MILLIMETERS
(.205)
.118
.050
.024
.087
.291
(5.20)
3.00
1.27
0.60
2.20
7.40
NOTES:
1.
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Marking
SC YYWW
SRDA3.3-6
PHIL
Working
Voltage
Qty/R eel
R eel Size
SRDA3.3-6.TBT
3.3V
500
7 Inch
SRDA05-6.TBT
5V
500
7 Inch
Part Number
SC YYWW
SRDA05-6
PHIL
SRDA05-6
SRDA3.3-6
YYWW = Date Code
Pin 1 Location
User Direction of feed
B0
K0
5.40 +/-0.20 mm
2.00 +/-0.10 mm
Tape
Width
B, (Max)
D1
K
(MAX)
P0
P2
T(MAX)
12 mm
8.2 mm
1.5 + 0.1 mm
- 0.0 mm
1.5 mm
1.750.10
mm
5.50.05
mm
4.5 mm
4.00.1
mm
4.00.1
mm
2.00.05
mm
0.4 mm
12.0 mm
0.3
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
2010 Semtech Corp.
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