AOD4189

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4189 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.

VDS (V) = -40V

ID = -40A
(V GS = -10V)
RDS(ON) < 22m (VGS = -10V)
RDS(ON) < 29m (VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!

-RoHS Compliant
-Halogen Free*
TO-252
D-PAK

Top View
D

Bottom View

G
S
G

Absolute Maximum Ratings TC=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS

Gate-Source Voltage
TC=25C

Continuous Drain
Current B,H
Avalanche Current

Repetitive avalanche energy L=0.1mH

TC=25C
Power Dissipation B

20

Junction and Storage Temperature Range

Maximum Junction-to-Case D,F

Alpha & Omega Semiconductor, Ltd.

-28

IDM

-50

IAR

-35

EAR

61

mJ

31

2.5
1.6
-55 to 175

TJ, TSTG

Symbol
t 10s
Steady-State
Steady-State

62.5

PDSM

TA=70C

Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient

ID

PD

TC=100C
TA=25C

Power Dissipation

Units
V

-40

TC=100C

Pulsed Drain Current

Maximum
-40

RJA
RJC

Typ
15
41
2

Max
20
50
2.4

Units
C/W
C/W
C/W

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AOD4189

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-250A, VGS=0V

-40
-1
TJ=55C

-5

Gate-Body leakage current

VDS=0V, VGS= 20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.7

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-50

100

VGS=-10V, ID=-12A
Static Drain-Source On-Resistance

TJ=125C
VGS=-4.5V, ID=-8A

gFS

Forward Transconductance

VDS=-5V, ID=-12A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

VGS=-10V, VDS=-20V,
ID=-12A

-3

18

22

2.5

27

33

23

29

nA
V

m
S

-1

-20

A
pF

185

pF

155

pF

4.5

6.5

31.4

41

nC

7.9

10

7.6

nC

6.2

nC

10

ns

18

ns

38

ns

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

IF=-12A, dI/dt=100A/s

32

Qrr

Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s

30

Body Diode Reverse Recovery Time

1870

tD(on)

VGS=-10V, VDS=-20V, RL=1.6,

RGEN=3

Units

35

VGS=0V, VDS=-20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

-1.9

-0.74

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss

Max

VDS=-40V, VGS=0V

IGSS

RDS(ON)

Typ

24

ns
42

ns
nC

A: The value of R JA is measured with the device in a still air environment with T A =25C. The power dissipation P DSM and current rating IDSM are
based on T J(MAX)=150C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C.
D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t 300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device TBD
mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175C. The SOA curve provides a single pulse rating.
TBD
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev1: Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AOD4189

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50

50
-10V

VDS=-5V

-4.5V
-4.0V

40

40

-ID(A)

-ID (A)

-6.0V
30
VGS=-3.5V

30

20

20

10

10

125C
25C

1.5

3.5

4.5

30
Normalized On-Resistance

28
VGS=-4.5V

26
RDS(ON) (m )

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Figure 1: On-Region Characteristics

24
22
20
VGS=-10V

18
16

VGS=-10V
ID=-12A

1.8
1.6

VGS=-4.5V
ID=-8A

1.4
1.2
1
0.8

10

20

30

40

-50 -25

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75 100 125 150 175 200

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
100

55

150

ID=-12A

50

10

45

mJ

40
35

-IS (A)

RDS(ON) (m )

2.5

125C

0.1
125C

0.01

25C

30
0.001
25

25C

0.0001

20

0.00001

15
3

10

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AOD4189

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2800

10
VDS=-20V
ID=-12A

2400
Ciss
Capacitance (pF)

-VGS (Volts)

2000
1600
1200
800
Crss

Coss

400
0

0
0

10

15

20

25

30

35

Qg (nC)
Figure 7: Gate-Charge Characteristics

10

15

20

25

35

40

-VDS (Volts)
Figure 8: Capacitance Characteristics

10000

100

TJ(Max)=175C
TC=25C

10s
100s
10

Power (W)

-ID (Amps)

30

RDS(ON)
limited

1000

100

1ms
TJ(Max)=175C
TC=25C

10ms
DC

1
1

10
-VDS (Volts)

100

Z Jc Normalized Transient
Thermal Resistance

D=Ton/T
TJ,PK=Tc+PDM.ZJC.RJC
RJC=2.4C/W

0.0001

0.001

0.01

0.1

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

10

10
0.00001

150

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

mJ

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

T
0.1

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOD4189

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70

60

Power Dissipation (W)

-IA, Peak Avalanche Current (A)

100

10

50

40

30

20

10

1
0.01

0.1

10

100

1000

25

50

Time in Avalache, t A (s)

Figure 12: Single Pulse Avalanche Capability

75

100

125

150

175

TCASE (C)
Figure 13: Power De-rating (Note B)

10000

50
40

1000

30

Power (W)

Current rating -ID (A)

TJ(Max)=150C
TA=25C

20

100

10

10
0
0

25

50

75

100

125

150

1
1E-04 0.001

175

0.1
1
10
100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G)

TCASE (C)
Figure 14: Current De-rating (Note B)

Z JA Normalized Transient
Thermal Resistance

10

0.01

150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

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AOD4189

Gate Charge Test Circuit & Waveform

Vgs
Qg
-10V

VDC

VDC

Qgd

DUT

Qgs

Vds

Vgs
Ig
Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds

toff

ton
td(on)

Vgs

DUT

Vgs

td(off)

tr

tf

90%

Vdd

VDC

Rg

Vgs

10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2

EAR= 1/2 LIAR

Vds
Vds

Id

Vgs

Vgs

VDC

Rg

BVDSS
Vdd
Id
I AR

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT

Vds -

Isd

Vgs

Vgs
Ig

Alpha & Omega Semiconductor, Ltd.

-Isd

+ Vdd

t rr

dI/dt
-I RM
Vdd

VDC

-I F

-Vds

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