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STU13NM60N, STW13NM60N
N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET
in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
Datasheet production data
Features
TAB
Order codes
VDSS
(@Tjmax)
RDS(on)
max
ID
3
12
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
IPAK
TO-220FP
650 V
< 0.36
11 A
TAB
TAB
IPAK
TO-220
Applications
3
2
Figure 1.
TO-247
Switching applications
$ OR 4!"
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh technology. This revolutionary Power
MOSFET associates a vertical structure to the
companys strip layout to yield one of the worlds
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'
3
3#
Table 1.
Device summary
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
November 2012
This is information on a product in full production.
Marking
Packages
Packaging
13NM60N
TO-220FP
IPAK
TO-220
IPAK
TO-247
Tube
Tube
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21
Contents
STF/I/P/U/W13NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
............................. 6
Test circuits
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
.............................................. 9
STF/I/P/U/W13NM60N
Electrical ratings
Electrical ratings
Table 2.
Symbol
Parameter
Unit
TO-220FP IPAK, TO-220, IPAK, TO-247
VDS
Drain-source voltage
600
VGS
Gate-source voltage
25
ID
11(1)
11
ID
6.93(1)
6.93
44(1)
44
25
90
IDM (2)
PTOT
Total dissipation at TC = 25 C
dv/dt
(3)
VISO
Tstg
Storage temperature
Tj
15
V/ns
2500
V
- 55 to 150
150
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220FP
Rthj-case
Rthj-amb
Table 4.
Symbol
IPAK
TO-220
5
62.5
Unit
IPAK
TO-247
1.39
62.5
100
C/W
50
C/W
Avalanche characteristics
Parameter
Value
Unit
IAS
3.5
EAS
200
mJ
3/21
Electrical characteristics
STF/I/P/U/W13NM60N
Electrical characteristics
(TCASE = 25 C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On/off states
Parameter
Test conditions
Drain-source
I = 1 mA
breakdown voltage (VGS = 0) D
Min.
Typ.
Max.
Unit
600
IDSS
VDS = 600 V
VDS = 600 V, TC=125 C
1
100
A
A
IGSS
Gate-body leakage
current (VDS = 0)
VGS = 25 V
0.1
VGS(th)
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 5.5 A
0.28
0.36
Min.
Typ.
Max. Unit
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
790
60
3.6
pF
pF
pF
Equivalent output
capacitance
135
pF
Qg
Qgs
Qgd
VDD = 480 V, ID = 11 A,
VGS = 10 V,
(see Figure 20)
27
4
14
nC
nC
nC
RG
4.7
Ciss
Coss
Crss
Coss eq. (1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/21
STF/I/P/U/W13NM60N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5.5 A
RG = 4.7 VGS = 10 V
(see Figure 19)
Min.
Typ.
3
8
30
10
Max. Unit
ns
ns
ns
ns
Test conditions
Min
11
44
A
A
1.5
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 11 A, VGS = 0
230
2
18
ns
C
A
290
190
17
ns
C
A
trr
Qrr
IRRM
trr
Qrr
IRRM
5/21
Electrical characteristics
STF/I/P/U/W13NM60N
2.1
Figure 2.
Figure 3.
Figure 5.
Figure 7.
AM03258v1
Op
Lim erat
ite ion
d b in
y m this
ax ar
RD ea
is
S(
o
ID
(A)
n)
10
0.1
0.1
100s
Tj=150C
Tc=25C
1ms
Sinlge
pulse
10ms
10
Figure 4.
10s
100
VDS(V)
)
on
10s
100s
Li
S(
10
pe
ra
ite tion
d
by in t
m his
ax a
R rea
is
ID
(A)
1ms
Tj=150C
Tc=25C
Single pulse
0.1
0.01
0.1
Figure 6.
10
100
10ms
VDS(V)
n)
(o
DS
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
10
is
ID
(A)
10s
100s
Tj=150C
Tc=25C
1ms
10ms
Sinlge
pulse
0.1
0.1
6/21
10
100
VDS(V)
STF/I/P/U/W13NM60N
Figure 8.
Electrical characteristics
Figure 9.
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