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TGS2355-SM

0.5-6 GHz 100 Watt GaN Switch


Applications

Commercial and Military Radar


Communications
Electronic Warfare
Test Instruments
General Purpose
High Power Switching

Product Features

Functional Block Diagram

Frequency Range: 0.5 - 6 GHz


Insertion Loss: < 1.1 dB
Power Handling: 50 dBm (pulsed)
Isolation: 40 dB typical
Return Loss: > 15 dB
Control Voltages: 0 V/-40 V
Switching Speed: < 50 ns
Reflective Switch
Package Dimensions: 5.0 x 5.0 x 1.42 mm

General Description

Pin Configuration

The TriQuint TGS2355-SM is a Single-Pole, DoubleThrow (SPDT) reflective switch fabricated on TriQuint's
TQGaN25 0.25um GaN on SiC production process.
Operating from 0.5 to 6GHz, the TGS2355-SM typically
supports up to 100W input power (pulsed) handling at
control voltages of 0/-40 V. This switch maintains low
insertion loss of 1.1 dB or less and greater than 40 dB
isolation, making it ideal for high power switching
applications across both defense and commercial
platforms.
The TGS2355-SM is offered in a 5 x 5 mm air-cavity QFN
package comprised of an aluminum-nitride base with a
LCP epoxy-sealed lid. This, along with the minimal DC
power consumption, allows for easy system integration.
Lead-free and RoHS compliant.

Pin No.

Label

28, 29
22
3
5
20
1-2, 4, 6-19, 21, 23-27, 30-32, 33

RFC
VC1
VC2
RF2
RF1
GND

Ordering Information
Part No.

ECCN

Description

TGS2355-SM

EAR99

0.5-6 GHz 100 Watt


GaN Switch

Evaluation boards available on request.

Datasheet: Rev - 07-18-14


2014 TriQuint

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Disclaimer: Subject to change without notice

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Absolute Maximum Ratings
Parameter
Control Voltage (VC)
Control Current (IC)
Power Dissipation
RF Input Power (pulsed, 10% Duty
Cycle, 20us pulse width)
Channel Temperature, TCH
Mounting Temperature (30 sec)
Storage Temperature

Recommended Operating Conditions


Rating

Parameter

-50 V
-3.5 / +3.5 mA
35 W
50.5 dBm
275 C
320 C
-55 to 150 C

Min

Frequency
Input Power Handling
(pulsed)
Control Voltage
Channel Temp., Tch

Typ

0.5

Max Units
6

GHz

50

dBm

-40

V
C

225

Electrical specifications are measured at specified test


conditions. Specifications are not guaranteed over all
recommended operating conditions.

Operation of this device outside the parameter ranges given


above may cause permanent damage.

Electrical Specifications
Test conditions unless otherwise noted: Temp= +25C. Z0 = 50 , Vc = -40 V, parts mounted to EVB (page 9)

Parameter

Min

Operational Frequency Range


P-0.1dB (pulse)
Control Current (IC)
Insertion Loss (On-State) 0.5-4.0 GHz
Insertion Loss (On-State) 4.0-6.0 GHz
Input Return Loss On-State (Common Port RL)
Output Return Loss On-State (Switched Port RL)
Isolation (Off-State)
Output Return Loss Off-State (Isolated Port RL)
Switching Speed (10-90%, 90-10%, VC=-20V)
Third Order Intermodulation Distortion (FC=4 GHz)
Second Harmonic Level (F0=4 GHz)
Control Voltage
Insertion Loss Temperature Coefficient

Datasheet: Rev - 07-18-14


2014 TriQuint

Typ

0.5
48
1.0
< 0.7
< 1.1
> 15
> 15
40
>1
50
< -46
< -40
-40
0.004

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Max

Units

GHz
dBm
mA
dB
dB
dB
dB
dB
dB
ns
dBc
dBc
V
dB/ C

-48

Disclaimer: Subject to change without notice

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Specifications
Thermal and Reliability Information
Parameter

Conditions

Thermal Resistance (JC)

(1)

TBASE = 85 C, VC1 = 0 V, VC2 = -40 V,


PIN = 100 W (CW), PDISS =29.3 W (CW)

(1)

Channel Temperature (TCH)


Median Lifetime (TM)
Thermal Resistance (JC)

(1)

Channel Temperature (TCH)

TBASE = 85 C, VC1 = 0 V, VC2 = -40 V,


PIN = 100 W, PDISS =29.3 W, Pulsed
Power: PW = 100 us, DC = 10 %

(1)

Median Lifetime (TM)

Value

Units

4.37

C/W

213

4.15E06

Hrs

1.88

C/W

140

5.43E09

Hrs

Notes:

1. MMIC attached to 12 mil AlN QFN base using 0.8 mil thick Diemat 6030HK epoxy. Thermal resistance is determined from
the channel to the back of the package (fixed 85 C temperature).

Median Lifetime

Median Lifetime, TM (Hours)

Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX


1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04

Median Lifetime vs. Channel Temperature

FET13

25

50

75

100

125

150

175

200

225

250

275

Channel Temperature, TCH (C)

245

Maximum Channel Temperature (C)

Peak Temperature vs. CW Power


12-mil AlN, 6030HK Die Attach; Pkg base = 85 C

Tch, max Temperature, C

225
Tch,max for 12-mil AlN Pkg Base

205

Recommended Limit for Tch,max

185
165
145
125
105
85
0

15

30

Datasheet: Rev - 07-18-14


2014 TriQuint

45
60
75
RF Input Power, Watts

90

105

220
210
200

Maximum Channel Temperature


0.012" AlN with 6030HK, Tbase=85 C, Pin=100 W

190
180
170
160

5% Duty Cycle
10% Duty Cycle

150
140
130
120
110
100
1.0E-06

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20% Duty Cycle


50% Duty Cycle

10% duty cycle


100 us pulse

1.0E-05

1.0E-04 1.0E-03 1.0E-02


Pulse Width (sec)

1.0E-01 1.0E+00

Disclaimer: Subject to change without notice

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Typical Performance
Test conditions unless otherwise noted: parts mounted to EVB (page 9)

Insertion Loss vs. Frequency

0.0

Insertion Loss vs. Freq. vs. VC2

0.0

VC1 = 0V, RF1 Path On

-0.5

-0.5

-1.0

-1.0

-1.5

-1.5

S21 (dB)

S21, S31 (dB)

Temp.= 25 C

-2.0
-2.5
-3.0

-2.0
-2.5
VC2 = -20 V

-3.0

VC2 = -30 V

RF1 Path (S21) On


RF2 Path (S31) On

-3.5

-3.5

-4.0

VC2 = -40 V

-4.0
0

Frequency (GHz)

Insertion Loss vs. Freq. vs. Temp.

0.0

-1.0

-20

S21, S31 (dB)

S21 (dB)

-10

-1.5
-2.0
- 40 C
+25 C
+85 C

-30
-40
-50
-60

-3.5

RF2 Path (S31) Off


RF1 Path (S21) Off

-70

-4.0

-80
0

Frequency (GHz)

Return Loss vs. Frequency

0.0

Temp. = 25 C

Temp. = 25 C

-0.5

-5

-1.0

S22, S33 (dB)

RFC (S11)
RF1 Path (S22) On
RF2 Path (S33) On

-10

Frequency (GHz)

Return Loss vs. Frequency

Return Loss (dB)

Temp.= 25 C

-0.5

-3.0

Isolation vs. Frequency

VC1 = 0V, VC2 = -40 V, RF1 Path ON

-2.5

Frequency (GHz)

-15
-20
-25
-30

-1.5
-2.0
-2.5
-3.0
-3.5
-4.0

RF2 Path (S33) Off

-4.5

RF1 Path (S22) Off

-5.0
0

Frequency (GHz)

Datasheet: Rev - 07-18-14


2014 TriQuint

Frequency (GHz)

- 4 of 13 -

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Typical Performance
Test conditions unless otherwise noted: parts mounted to EVB (page 9), Pulsed Input Power PW=100 us, DC=10%, T=+25 C

Compression vs. Pin vs. Freq.


VC1 = 0 V, VC2 = -40 V, Temp. = 25 C

Compression (dB)

Compression (dB)

0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0

0.1 GHz
0.3 GHz
0.5 GHz

35

0.2 GHz
0.4 GHz
1.0 GHz

38

41

44

47

Compression vs. Pin vs. Freq.

0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0

50

VC1 = 0 V, VC2 = -40 V, Temp. = 25 C

2.0 GHz
3.0 GHz
4.0 GHz
5.2 GHz
6.0 GHz

35

38

Compression vs. Pin vs. Temp.

0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0

VC1 = 0 V, VC2 = -40 V, Freq. = 3.0 GHz

- 40 C
+25 C
+85 C

35

38

41

44

47

50

38

-40

41

44

47

50

Harmonic vs. Output Power

VC1 = -40 V, VC2 = 0 V, F0 = 4 GHz (CW)

-10

Harmonic Level (dBc)

Harmonic Level (dBc)

2*F0 -40 C
2*F0 25 C
2*F0 85 C

-30

50

Input Power (dBm)

Harmonic vs. Output Power

-20

47

VC2 = -20 V
VC2 = -30 V
VC2 = -40 V

35

VC1 = -40 V, VC2 = 0 V, F0 = 3 GHz (CW)

-10

44

Compression vs. Pin vs. VC


VC1 = 0 V, Freq. = 3.0 GHz, Temp. = 25 C

0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0

Input Power (dBm)

41

Input Power (dBm)

Compression (dB)

Compression (dB)

Input Power (dBm)

3*F0 -40 C
3*F0 25 C
3*F0 85 C

-50
-60
-70

-20

2*F0 -40 C
2*F0 25 C
2*F0 85 C

-30
-40

3*F0 -40 C
3*F0 25 C
3*F0 85 C

-50
-60
-70

-80

-80
35

36

37

38

39

40

41

42

43

44

45

46

47

Output Power (dBm)

Datasheet: Rev - 07-18-14


2014 TriQuint

35

36

37

38

39

40

41

42

43

44

45

46

47

Output Power (dBm)

- 5 of 13 -

Disclaimer: Subject to change without notice

www.triquint.com

TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Typical Performance
Test conditions unless otherwise noted: parts mounted to EVB (page 9)

IM3 vs. Input Power vs. Frequency

-10

IM5 vs. Input Power vs. Frequency

-10

Temp. = +25 C, VC1 = -40V, VC2 = 0V, 100 MHz Tone Spacing

-20

-20

-30

-30

-40

-40

IM5 (dBc)

IM3 (dBc)

Temp. = +25 C, VC1 = -40V, VC2 = 0V, 100 MHz Tone Spacing

-50

-50

-60

-60

-70

-70
Fc=4.0 GHz

-80

Fc=4.0 GHz

-80

-90

-90
35

36

37

38

39

40

41

42

43

44

35

36

37

Input Power per Tone (dBm)

IM3 vs. Input Power vs. Temperature

-10

40

41

42

43

44

VC1 = -40V, VC2 = 0V, Freq. = 4.0 GHz, 100 MHz Spacing

-20

-20
- 40 C

-30
-40

- 40 C

-30

+25 C
+85 C

IM5 (dBc)

IM3 (dBc)

39

IM5 vs. Input Power vs. Temperature

-10

VC1 = -40V, VC2 = 0V, Freq. = 4.0 GHz, 100 MHz Spacing

-50
-60

+25 C

-40

+85 C

-50
-60

-70

-70

-80

-80

-90

-90
35

36

37

38

39

40

41

42

43

44

35

36

Input Power per Tone (dBm)

37

38

39

40

41

42

43

44

Input Power per Tone (dBm)

IM3 vs. Input Power vs. VC1

-10

IM5 vs. Input Power vs. VC1

-10

VC2 = 0V, Freq. = 4.0 GHz, Temp. = +25 C, 10 MHz Spacing

VC2 = 0V, Freq. = 4.0 GHz, Temp. = +25 C, 10 MHz Spacing

-20

-20
-20 V

-30

-30

-30 V

-40

-40 V

IM5 (dBc)

IM3 (dBc)

38

Input Power per Tone (dBm)

-50
-60

-30 V
-40 V

-50
-60

-70

-70

-80

-80

-90

-20 V

-40

-90
36

37

38

39

40

41

42

43

Input Power per Tone (dBm)

Datasheet: Rev - 07-18-14


2014 TriQuint

36

37

38

39

40

41

42

43

Input Power per Tone (dBm)

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Disclaimer: Subject to change without notice

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Application Circuit

Notes:
DC blocking capacitors are required on all RF ports.
This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one
unused RF switched port with a 50 Ohm load.

Function Table
RF Path
RFC to RF1 (50 load to RF2)
RFC to RF2 (50 load to RF1)

Datasheet: Rev - 07-18-14


2014 TriQuint

State

VC1

VC2

On-State (Insertion Loss)

0V

-40 V

Off-State (Isolation)
On-State (Insertion Loss)
Off-State (Isolation)

-40 V
-40 V
0V

0V
0V
-40 V

- 7 of 13 -

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Pin Description

Bottom View

Pin No.

Label

Description

28, 29
22
3

RFC
VC1
VC2

RF common port; matched to 50 ; DC coupled


Control voltage 1
Control voltage 2

5
RF2
20
RF1
1-2, 4, 6-19, 21, 23-27,
GND
30-32
33

Datasheet: Rev - 07-18-14


2014 TriQuint

GND

RF switched port 2; matched to 50 ; DC coupled


RF switched port 1; matched to 50 ; DC coupled
Connected to ground paddle (33); must be grounded to PCB to
improve isolation.
Backside paddle. Multiple vias should be employed to minimize
inductance and thermal resistance.

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Applications Information
Evaluation Board Layout
RF Layer is 0.020 thick Rogers Corp. 6202, r =
2.94. Metal layers are 0.5 oz. copper. The microstrip
line at the connector interface is optimized for the
Southwest Microwave end launch connector 29202A-5.
The pad pattern shown has been developed and
tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been
developed to accommodate lead and package
tolerances. Since surface mount processes vary
from company to company, careful process
development is recommended.

EVB Package Mounting Detail

Notes:

1. Flares (as shown) on RF transmission lines are required to achieve best electrical performance.
Datasheet: Rev - 07-18-14
2014 TriQuint

- 9 of 13 -

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Mechanical Information Package Information and Dimensions

The TGS2355-SM will be marked with the YYWW designator and a lot code marked below the part
designator. The YY represents the last two digits of the year the part was manufactured, the WW is the
work week, and the MXXX is an auto-generated number.
This package is lead-free/RoHS-compliant. The package base is Aluminum Nitride and the plating
material on the leads is gold over nickel (Au-Ni). This package is compatible with both lead free and tinlead soldering processes. The lid is Liquid Crystal Polymer (LCP).
Dimensions are in millimeters.

Datasheet: Rev - 07-18-14


2014 TriQuint

- 10 of 13 -

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Recommended Soldering Temperature Profile

Datasheet: Rev - 07-18-14


2014 TriQuint

- 11 of 13 -

Disclaimer: Subject to change without notice

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device

Solderability
Compatible with the latest version of J-STD-020 Lead
free solder, 260 C.

MSL Rating
ESD Rating:
Value:
Test:
Standard:

TBD
TBD
Human Body Model (HBM)
JEDEC Standard JESD22-A114

ECCN
US Department of Commerce: EAR99

TBD at 260 C convection reflow


The part is rated Moisture Sensitivity Level TBD
JEDEC standard IPC/JEDEC J-STD-020.

RoHS-Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free

Datasheet: Rev - 07-18-14


2014 TriQuint

- 12 of 13 -

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TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com

Tel:
Fax:

For technical questions and application information:

+1.972.994.8465
+1.972.994.8504
Email: info-networks@tqs.com

Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated
with such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Datasheet: Rev - 07-18-14


2014 TriQuint

- 13 of 13 -

Disclaimer: Subject to change without notice

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