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Packages:
28-pin TSSOP
with exposed thermal pad
(LP package)
28-contact QFN
5 mm 5 mm 0.90 mm
(ET package)
Not to scale
VDD
Comm
Logic
HA
HB
0.47 F
CP1
CP2
Charge Pump
Regulator
A4915
VBB
VIN
CREG
VREG
47 V
TVS
CVBB1
CVBB2
HC
VDD
VDD
TDEAD
Control
Logic
Voltage to
Duty
VRESET
FAULT
A4915-DS, Rev. 3
RGATE
SB
SC
GLA
GLB
OSC
SPEED
R3
HA
HB
HC
CBOOTA
SA
VREG
VDD
CA
CB
CC
GHA
GHB
GHC
DIR
ENABLE
R2
R1
High Side
Driver
BRAKEn
Rdead
Phase A
Bootstrap
Monitor
CVDD1
Low Side
Driver
RGATE
To Phase B
To Phase C
GLC
One of three phases shown
LSS
GND
A4915
Selection Guide
Part Number
Package
Packing*
A4915METTR-T
1500 pieces
per 7-in. reel
A4915MLPTR-T
4000 pieces
per 13-in. reel
Symbol
Notes
Rating
Unit
VBB
0.3 to 50
VDD
0.3 to 6
VREG Pin
VREG
0.3 to 16
CP1 Pin
VCP1
0.3 to 16
CP2 Pin
VCP2
VCP1 0.3 to
VREG + 0.3
VI
0.3 to 6
Hall Inputs
VHx
0.3 to 6
Logic Outputs
VO
0.3 to 6
SPEED Input
VSPEED
0.3 to 6
VCx
0.3 to
VREG + 50
VGHx
VCx 16 to
VCX + 0.3
VSx
VCx 16 to
VCx + 0.3
VGLx
VREG 16 to 18
LSS Pin
VLSS
VREG 16 to 18
TJ(max)
150
Tstg
55 to 150
TA
20 to 105
Logic Inputs
Thermal Characteristics may require derating at maximum conditions, see application information
Characteristic
Package Thermal Resistance
Symbol
RJA
Test Conditions*
Value
Unit
32
C/W
28
C/W
A4915
22 GHA
23 SA
24 CA
25 VREG
26 CP2
27 CP1
28 GND
Pin-out Diagrams
LSS 1
28 HC
GLC 2
27 HB
GHC 3
26 HA
VBB
21 GLA
SC 4
25 BRAKEn
SPEED
20 CB
CC 5
24 DIR
TDEAD
19 SB
GLB 6
VDD
18 GHB
GHB 7
17 GLB
SB 8
21 VDD
CB 9
20 TDEAD
GLA 10
19 SPEED
GHA 11
18 VBB
SA 12
17 GND
CA 13
16 CP1
VREG 14
15 CP2
FAULT
PAD
GHC 14
GLC 13
LSS 12
BRAKEn
HC 11
15 SC
HB 10
16 CC
7
8
DIR
HA 9
ENABLE
ET Package
PAD
23 ENABLE
22 FAULT
LP Package
Function
Number
ET
LP
Name
Function
Number
ET
LP
Supply voltage
18
SC
15
SPEED
19
CC
16
TDEAD
20
GLB
17
21
GHB
18
Fault output
22
SB
19
23
CB
20
24
GLA
21
10
25
GHA
22
11
VDD
FAULT
ENABLE
DIR
BRAKEn
HA
26
SA
23
12
HB
10
27
CA
24
13
HC
11
28
VREG
25
14
LSS
Sense input
12
CP2
26
15
GLC
13
CP1
27
16
GHC
14
GND
Ground
28
17
PAD
A4915
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VBB
IBB
5.0
50
10
20
mA
12
24
mA
3.5
mA
Sleep mode
ID = 10 mA
0.4
0.7
1.0
ID = 100 mA
1.5
2.2
2.8
VfBOOT
VDBOOT
250
500
750
mA
VDD
5.5
IDDQ
10
mA
IDDS
Sleep mode
10
ENABLE = high,
SPEED = low for longer than tSLEEP
IENB(SLP)
ISPEED(SLP)
IDIR(SLP)
fENB
VSPEED = VDD
100
kHz
fPWM
VENABLE = VDD
14
20
26
kHz
VDD
VSPEED
VSPEED(D)
10
15
20
VSPEED(E)
79
82
86
VREG
VBB = 7.5 V
25
25
11.8
13
13.75
11.5
13
13.75
2 VBB
3.5 V
VBB = 5.5 V
8.0
9.5
VBB = 6 V
Protection
Thermal Shutdown Temperature
VREG Undervoltage
VREG Undervoltage Hysteresis
FAULT rising
155
170
185
VREGON
TTSD
VREG rising
7.0
7.8
8.6
VREGOFF
VREG falling
6.39
7.1
7.81
700
mV
VREGhys
A4915
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Protection (continued)
Bootstrap Undervoltage
Bootstrap Undervoltage Hysteresis
VDD Undervoltage
VDD Undervoltage Hysteresis
Sleep Wake-up Delay
55
65
VBOOTUV
20
VDD rising
2.75
2.95
VDD falling
2.45
2.6
VDDUVhys
50
100
150
mV
tWAKE
ms
VCx 0.2
VSx + 0.3
VDDUV
Gate Drive
High-Side Gate Drive Output
VGHx
VGLx
VREG 0.2
IGLx < 10 A
0.3
12
17
2.4
3.5
4.6
RGHx(ON)UP
RGLx(ON)DN
RGHx(PPD)
5000
RGLx(PPD)
5000
trGx
200
ns
tfGx
150
ns
10
ns
RTDEAD = 12 k
150
ns
RTDEAD = 64 k
800
925
1050
ns
RTDEAD = 220 k
2.9
0.7 VDD
0.3 VDD
tDEAD
Logic I/O
Logic Input Voltage
Logic Input Current
VIN(H)
VIN(L)
IIN(H)
VIN = high
10
IIN(L)
0.2
ms
ms
VFAUlT
tSLEEP
A4915
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
295
mV
VRESET
0.8
tFAULT
12
RHx(PU)
Hx pins, VIN = 0 V
100
IHALL
Hx pins, VIN = 5 V
RIN(PD)
50
IIN(SLP)
tpd(on)
1200
ns
900
ns
tpd(off)
1200
ns
900
ns
ENABLE
900
ns
DIR, BRAKEn
1000
ns
Propagation Delay
tglitch
A4915
from the supply. When coming out of sleep allow 3ms for the
charge pump regulator to stabilize.
Basic Operation
The A4915 is a 3-phase MOSFET driver intended to drive high
current MOSFETs. It is designed for use in battery operated
equipment where low-voltage operation is critical. The A4915
also features a low current sleep mode which disables the device
and draws minimum supply current. The A4915 is capable of
driving 6 N-channel MOSFETs. Commutation logic includes
Enable, Direction, and Brake modes for external PWM control.
tively shorts out the motor generated BEMF. The BRAKEn input
overrides the ENABLE and SPEED inputs except when in Sleep
mode. Refer to Table 2 for the logic truth table. In order to comply with Failure Mode Effects and Analysis (FMEA), the brake
function is normally active (logic low). If the BRAKEn pin on
the device is open due to some failure of solder joint or microprocessor failure, the device will automatically implement Brake
mode, preventing the motor from turning or pumping up the
supply. Applying logic high to the BRAKEn terminal deactivates
Brake mode and allows normal operation.
Care must be taken when applying the Brake command because
large currents can be generated. The user must ensure that the
maximum ratings of the MOSFETs are not exceeded under worst
HB
HC
DIR
GLA
GLB
GLC
GHA
GHB
GHC
SA
SB
SC
High
Low
High
Low
Low
High
Low
High
Low
High
High
Low
Low
High
Low
High
High
Low
High
Low
High
Low
Low
High
Hall Fault
Hall Fault
A4915
100
90
IBRAKEn = VBEMF / RL
80
(%)
60
Ton / T
70
50
40
the open drain output pulls the Fault output to ground. When
a fault occurs the open drain output is released, and the Fault
output is then pulled to a logic high through a connected external
passive pullup resistor. Fault conditions are shown in Table3.
30
20
10
10
20
30
40
50
60
70
80
90
100
VSPEED/VDD (%)
Event
Fault Pin
TSD
High
Outputs Latched
Disabled
Yes
SLEEP
High
Disabled
No
UVLO VREG/VDD
High
Disabled
No
Invalid Hall
Low
Disabled
No
Mode of Operation
ENABLE
SPEED
BRAKEn
Low
High
High
Low
High
Low
High
High
High
High
High
Low
High
VDD VSPEED(E) to
VDD VSPEED(D)
High
High
High
High
High
High
Xa
High
Xa
aX
= dont care.
and minium duty cycle limited by boot capacitor charge management.
cInternal PWM active.
bMaximum
A4915
value sense resistor can be placed from LSS to ground for current
sensing purposes. The resistor should be chosen so that the DC
voltage across the sense resistor is between 200 mV and
500 mV. If a sense resistor is not used then LSS should be connected directly to power ground.
MOSFETs.
MOSFETs.
motor.
Thermal Shutdown
If the die temperature exceeds TTSD, the FAULT output is
turned off and the outputs are disabled. Thermal shutdown is a
latched fault.
Dead Time
To prevent cross-conduction (shoot through) in any phase of the
bridge, it is necessary to have a dead time, tDEAD, between a
high- or low-side turn-off and the next complementary turn-on
event. The dead time for all three phases is set by a single dead
4000
3500
Maximum
3000
Typical
2500
Minimum
2000
1500
1000
500
0
10
30
50
70
90
110
130
150
170
190
210
230
250
RDEAD (k)
Figure 2: RDEAD versus Dead Time Error
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
A4915
The regulated voltage VREG is decoupled on the VREG terminal. The decoupling capacitance is based on the bootstrap capacitor which is dependent on the MOSFET selection. Refer to the
Application Information section for details on correct sizing of
VREG and bootstrap capacitors.
Gate Drive and RGATE
The gate drive for the external MOSFETs is capable of providing
the large current transients needed to quickly charge and discharge the gate capacitance to maintain fast switching speeds and
minimal power dissipation. The low-side driver current is sourced
by the capacitor on the VREG terminal. The high-side gate drive
current is supplied by the respective bootstrap capacitance connected between the Cx and Sx terminals. The charge and discharge of the gate can be controlled by using an external resistor
(RGATE) in series with the gate.
Bootstrap Charge Management
In order to protect the external MOSFETs from insufficient gate
drive, it is important that the bootstrap capacitor voltage be monitored. Before a high-side switch is allowed to turn on, it must
have sufficient charge on the bootstrap capacitor. If the voltage
on the bootstrap capacitor is below the turn-on voltage limit, the
A4915 will attempt to charge the bootstrap capacitor by turning
on the associated low-side driver. The bootstrap monitor stays
active during the duration of the switch on-time. If the voltage
falls out of compliance at any time when the high-side driver is
enabled, the driver is disabled and the low-side switch is activated to charge the bootstrap capacitor.
During normal operation and in conditions where the PWM
duty cycle creates short off-times, the low-side switch may be
activated more often to keep sufficient charge on the bootstrap
capacitor. Proper sizing of the bootstrap and VREG capacitors is
critical to being able to maintain effective gate drive. Refer to the
Application Information section for details on correct sizing of
VREG and bootstrap capacitors.
10
A4915
Application Information
Bootstrap Capacitor Selection
In order to properly size the capacitor CBOOT, the total gate
charge must be known. Too large a bootstrap capacitor and the
charge time will be long, resulting in maximum duty cycle limitation. Too small a capacitor and the voltage ripple will be large
when charging the gate.
Size the CBOOT capacitor such that the charge, QBOOT, is 20
times larger than the required charge for the gate of the MOSFET,
QGATE:
CBOOT = (QGATE 20) / VBOOT
where VBOOT is the voltage across the bootstrap capacitor. The
voltage drop across the bootstrap capacitor as the MOSFET gate
is being charged, V, can be approximated by:
V = QGATE / CBOOT
For the bootstrap capacitor, a ceramic type rated at 16V or larger
should be used.
VREG Capacitor Selection
VREG is responsible for providing all the gate charge for the low
side MOSFETs and for providing all the charge current for the
three bootstrap capacitors. For these purposes, the VREG capacitor, CREG, should be 20 times the value of CBOOT:
CREG = 20 CBOOT
Layout Recommendations
Careful consideration must be given to PCB layout when designing high frequency, fast-switching, high-current circuits (refer to
Figures 3 and 4):
The A4915 ground, GND, and the high-current return of the external MOSFETs should return separately to the negative side of
11
A4915
VBB
GND
R1 R7
C2
Q1
PHASE A
R4 R10
C4
C7
C6
Q4
C8
GND
VBB
GND
R24
C5
R2
C9
R15
R8
Q2
C10
PHASE B
R5 R11
C1
Q5
VBB
R3 R9
Q3
GND
D1
PHASE C
R6 R12
Q6
LSS
VDD
C8
Solder
C6
Thermal (2 oz.)
SPEED
TDEAD
Thermal Vias
R4
GLA
R10
R7
Q1
C2
Q4
A4915
OUTA
CB
R24
PAD
CA
SA
GHA
VREG
C4
CP1
VBB
Ground (1 oz.)
CP2
Signal (1 oz.)
C9
SB
GHB
VDD
R2
C5
GLB
FAULT
R8
Q2
VBB
R5
R11
Q5
R15
ENABLE
DIR
BRAKEn
HA
HB
HC
LSS
GLC
GHC
PCB
R1
Trace (2 oz.)
GND
A4915
OUTB
CC
SC
C10
R3
R9
Q3
C1
R6
R12
Q6
OUTC
VDD
12
A4915
Q6
R12 R6
Q3
R9
Q5
R11 R5
PHASE C
D1
GND
C1
R3
PHASE B
C10
Q2
R8
R15
C5
C9
R2
C4
C8
GND
VBB
R24
GND
C7
C6
Q4
R10 R4
Q1
R7
PHASE A
R1
GND
C2
OUTC
LSS
GLC
Q6
R12
HC
HB
HA
BRAKEn
DIR
ENABLE
R6
C1
Q3
R9
R3
C10
GHC
SC
CC
OUTB
A4915
A4915
Solder
Q5
Trace (2 oz.)
PCB
R11
R5
PAD
Signal (1 oz.)
VBB
Ground (1 oz.)
Q2
Thermal (2 oz.)
R8
R2
VDD
C5
R24
GHB
SB
TDEAD
CB
SPEED
C9
OUTA
R15
FAULT
GLB
Thermal Vias
VBB
C4
GLA
Q4
Q1
C2
R7
R10
R4
R1
GHA
SA
GND
CA
CP1
VREG
CP2
C8
C6
13
A4915
VBB
VDD
VREG
FAULT
CP1
6V
18V
6V
50 k
18V
14V
Figure 5: Supplies
2 k
BRAKE
DIR
ENABLE
18V
18V
VDD
CP2
Figure 6:
Fault Output
6V
6V
Cx
18V
VDD
VDD
50 k
HA
HB
HC
18V
GHx
14V
Sx
5 k
SPEED
2 k
6V
VDD
18V
VREG
6V
6V
6V
18V
18V
GLx
LSS
14
A4915
1.15
28
1
2
0.50
28
A
5.00 0.15
3.15
4.80
3.15
29X
SEATING
PLANE
0.08 C
+0.05
0.25 0.07
0.90 0.10
4.80
C
0.50
0.73 MAX
B
2
1
28
3.15
3.15
15
A4915
0.45
9.700.10
8
0
28
0.65
28
0.20
0.09
1.65
B
3 NOM
4.400.10
3.00
6.400.20
6.10
0.60 0.15
A
1.00 REF
5.08 NOM
0.25 BSC
Branded Face
28X
SEATING
PLANE
0.10 C
0.30
0.19
0.65 BSC
SEATING PLANE
GAUGE PLANE
1 2
5.00
C
For Reference Only; not for tooling use (reference MO-153 AET)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
1.20 MAX
0.15
0.00
16
A4915
Revision History
Revision
Current
Revision Date
April 1, 2013
March 6, 2014
Description of Revision
Update EC table parameters
17