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HGT1S12N60A4S9A
Data Sheet
August 2003
Features
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S9A
TO-263AB
12N60A4
COLLECTOR
(FLANGE)
E
C
G
Symbol
JEDEC TO-263AB
C
COLLECTOR
(FLANGE)
G
G
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
UNITS
600
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
54
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
23
96
20
30
60A at 600V
167
1.33
W/oC
-55 to 150
oC
300
260
oC
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TYP
MAX
UNITS
PARAMETER
BVCES
IC = 250A, VGE = 0V
600
BVECS
IC = -10mA, VGE = 0V
20
250
2.0
mA
2.0
2.7
1.6
2.0
5.6
SYMBOL
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
VCE = 600V
IC = 12A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
250
nA
60
VGE = 15V
78
96
nC
VGE = 20V
97
120
nC
17
ns
ns
96
ns
18
ns
55
Switching SOA
SSOA
VGEP
Qg(ON)
IC = 12A,
VCE = 300V
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
160
EOFF
50
PARAMETER
SYMBOL
td(ON)I
ICE = 12A
VCE = 390V
VGE = 15V
RG = 10
L = 500H
Test Circuit (Figure 20)
trI
td(OFF)I
TEST CONDITIONS
tfI
MIN
TYP
MAX
UNITS
17
ns
16
ns
110
170
ns
70
95
ns
55
J
J
EON1
EON2
250
350
EOFF
175
285
0.75
oC/W
RJC
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Unless Otherwise Specified
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
70
60
50
40
30
20
10
0
0
500
300
100
TC
VGE
75oC
15V
10
20
700
30
100
200
300
400
500
600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
300
18
275
250
16
14
225
ISC
12
200
10
175
150
125
tSC
100
4
2
75
50
10
11
12
13
14
15
60
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250s
20
16
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0.5
1.0
1.5
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
400
300
200
6
8
10 12 14 16 18 20 22
ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0.5
1.0
1.5
2.5
250
200
150
100
50
0
10
12
14
16
18
20
22
24
32
17
16
TJ = 25oC, TJ = 125oC, VGE = 12V
15
14
13
24
20
16
12
8
12
11
10
16
24
18
20
600
100
400
500
24
700
0
2
10
12
14
16
18
20
22
24
10
12
14
16
18
20
22
24
115
90
110
VGE = 12V, VGE = 15V, TJ = 125oC
105
100
95
VGE = 12V, VGE = 15V, TJ = 25oC
70
60
50
40
30
90
20
85
2
10
12
14
16
18
20
22
10
24
16
250
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250s
TJ = 25oC
TJ = -55oC
150
TJ = 125oC
100
50
0
6
11
14
9
10
12
13
VGE, GATE TO EMITTER VOLTAGE (V)
15
ICE = 24A
0.6
0.4
ICE = 12A
0.2
ICE = 6A
75
100
125
18
20
22
24
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
150
50
16
10
20
30
40
50
60
QG , GATE CHARGE (nC)
70
80
0.8
0
25
14
16
1.0
12
14
1.2
10
200
10
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
5
10
100
1000
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
COES
0.5
CRES
0
0
10
15
20
25
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250s, TJ = 25oC
2.3
2.2
ICE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8
10
11
12
13
14
15
16
100
0.5
0.2
0.1
10-1
t1
0.05
PD
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
RHRP660
90%
10%
VGE
EON2
EOFF
L = 500H
VCE
RG = 10
90%
+
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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MICROCOUPLER
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MICROWIRE
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OCXPro
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PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
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RapidConnect
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SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
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TINYOPTO
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UltraFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I5