[ /Title

(IRF53
0,
RF1S5
30SM)
/Subject
(14A,
100V,
0.160
Ohm,
NChannel
Power
MOSFETs)
/Autho
r ()
/Keywords
(14A,
100V,
0.160
Ohm,
NChannel
Power
MOSFETs,
Intersil
Corporation,
TO220AB
, TO263AB

IRF530
Data Sheet

February 2002

14A, 100V, 0.160 Ohm, N-Channel Power

MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17411.

Ordering Information
PART NUMBER
IRF530

14A, 100V
rDS(ON) = 0.160
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol

PACKAGE
TO-220AB

Features

BRAND

IRF530
G

NOTE: When ordering, use the entire part number.

S

Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)

1
2002 Fairchild Semiconductor Corporation

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
IRF530 Rev. B1

IRF530
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

IRF530
100
100
14
10
56
20
79
0.53
69
-55 to 175

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC

300
260

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 150oC.
TC = 25oC, Unless Otherwise Specified

Electrical Specifications
PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

100

VGS = VDS, ID = 250A

4.0

VDS = 95V, VGS = 0V

25

A
A

Drain to Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V (Figure 10)

Gate to Threshold Voltage

VGS(TH)

Zero Gate Voltage Drain Current

IDSS

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC

On-State Drain Current (Note 2)

ID(ON)

Gate to Source Leakage Current

IGSS

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time

rDS(ON)
gfs
td(ON)
tr

Turn-Off Delay Time

td(OFF)

Fall Time

250

14

VGS = 20V

500

nA

ID = 8.3A, VGS = 10V (Figures 8, 9)

0.14

0.16

VDS > ID(ON) x rDS(ON) MAX, VGS = 10V

VDS 50V, ID = 8.3A (Figure 12)

5.1

7.6

VDD = 50V, ID 14A, RG 12, RL = 3.4

MOSFET Switching Times are Essentially
Independent of Operating Temperature

12

15

ns

35

65

ns

25

70

ns

25

59

ns

VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS

Ig(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature

18

30

nC

nC

nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

600

pF

250

pF

tf

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

Gate to Source Charge

Qgs

Gate to Drain Miller Charge

Qgd

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Internal Drain Inductance

LD

Measured from the

Contact Screw on Tab To
Center of Die
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die

Internal Source Inductance

LS

Measured from the Source

Lead, 6mm (0.25in) From
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D

50

pF

3.5

nH

4.5

nH

7.5

nH

1.9

oC/W

62.5

oC/W

LD
G
LS
S

Thermal Resistance Junction to Case

RJC

Thermal Resistance Junction to

Ambient

RJA

Free Air Operation

2
2002 Fairchild Semiconductor Corporation

IRF530 Rev. B1

IRF530
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

TEST CONDITIONS

ISD

Pulse Source to Drain Current (Note 2)

Modified MOSFET Symbol

Showing the Integral
Reverse P-N Junction
Diode

ISDM

MIN

TYP

MAX

UNITS

14

56

Source to Drain Diode Voltage (Note 2)

TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13)

TJ = 25oC, ISD = 14A, dISD/dt = 100A/s
TJ = 25oC, ISD = 14A, dISD/dt = 100A/s

VSD

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

2.5

5.5

120

250

ns

0.17

0.6

1.3

NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 530H, RG = 25, peak IAS = 14A (Figures 15, 16).

Typical Performance Curves

Unless Otherwise Specified

15

1.0
ID, DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

1.2

0.8
0.6
0.4
0.2

0
25

125
50
75
100
TC , CASE TEMPERATURE (oC)

150

25

175

50

75

100

150

125

175

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

ZJC, TRANSIENT THERMAL IMPEDANCE

12

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

10

0.5
0.2
PDM

0.1
0.1

0.05
t1

0.02
0.01

t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC

SINGLE PULSE
0.01
10-5

10-4

10-3

10-2

0.1

10

t P, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3
2002 Fairchild Semiconductor Corporation

IRF530 Rev. B1

IRF530
Typical Performance Curves

25
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

10 3

Unless Otherwise Specified (Continued)

10 2
10s
100s
10

1ms
10ms

0.1

TC = 25oC
TJ = 175oC
SINGLE PULSE

20

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
15
VGS = 6V
10
VGS = 5V
5
VGS = 4V
0

10
10 2
VDS, DRAIN TO SOURCE VOLTAGE (V)

10 3

IDS(ON), DRAIN TO SOURCE CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 8V

20

VGS = 7V
VGS = 10V

15

VGS = 6V

10
VGS = 5V
5
VGS = 4V
0

100

175oC

0.1
0

NORMALIZED ON RESISTANCE

rDS(ON), ON-STATE RESISTANCE ()

0.9

0.6
VGS = 10V
0.3
VGS = 20V

0
36

48

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

25oC

3.0

1.2

24

50

2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

FIGURE 7. TRANSFER CHARACTERISTICS

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

12

40

10

FIGURE 6. SATURATION CHARACTERISTICS

30

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS 50V

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.5

20

FIGURE 5. OUTPUT CHARACTERISTICS

25
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

VGS = 7V

VGS = 10V
VGS = 8V

60

2.4

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 14A

1.8

1.2

0.6

0
-60 -40 -20

20

40

60

80 100 120 140 160 180

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4
2002 Fairchild Semiconductor Corporation

IRF530 Rev. B1

IRF530
Typical Performance Curves

Unless Otherwise Specified (Continued)

1500
ID = 250A

1.15

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD

1200
C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

1.25

1.05

0.95

0.85

900
CISS

600

COSS

300

0.75
-60 -40 -20

CRSS
0

20

40

80 100 120 140 160 180

60

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS 50V

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100
ISD, SOURCE TO DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

10

25oC

175oC

0
0

10

15

102

10

TJ , JUNCTION TEMPERATURE (oC)

20

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

10

25oC

175oC
1

0.1

25

0.4
0.8
1.2
1.6
VSD , SOURCE TO DRAIN VOLTAGE (V)

I D , DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

2.0

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

VGS, GATE TO SOURCE (V)

ID = 14A
VDS = 50V

16
VDS = 20V
12

VDS = 80V
8

0
0

12

18

24

30

QG , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5
2002 Fairchild Semiconductor Corporation

IRF530 Rev. B1

IRF530
Test Circuits and Waveforms
VDS

BVDSS
tP

VDS

IAS
VARY tP TO OBTAIN

VDD

RG

REQUIRED PEAK IAS

VGS

VDD

DUT
tP

0V

IAS
0.01

tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

td(OFF)
tf

tr
VDS
RL

90%

RG

10%

10%

VDD

90%

90%

DUT

VGS
0

50%

50%
PULSE WIDTH

10%

VGS

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

12V
BATTERY

0.2F

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd
Qgs

0.3F

Ig(REF)

VDS
DUT

0
IG CURRENT
SAMPLING
RESISTOR

VGS

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORMS

6
2002 Fairchild Semiconductor Corporation

IRF530 Rev. B1

TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.

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FACT Quiet Series
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QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
STAR*POWER
Stealth

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UltraFET
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STAR*POWER is used under license

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.