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in 90 nm CMOS Technology
1, 2
1, 2
1, 2
I.
INTRODUCTION
Project supported by the National Basic Research Program of China (No. 2010CB327404)
___________________________________
978-1-61284-307-0/11/$26.00 2011 IEEE
(a)
(b)
Fig.3 The charging and discharging current. (a) Without an error amplifier.
(b)With an error amplifier
120
Id n
Iu p
Current(A)
100
80
60
40
20
0
(a)
0 .0
(b)
0 .2
0 .4
0 .6
0 .8
O u tp u t vo lta g e(V )
1 .0
1 .2
Id n
Iu p
120
100
Current(A)
80
TABLE1
Performance of the proposed and recently published charge pumps
60
40
Ref
Technology
20
Current
mismatch rate
Voltage swing
Frequency(MHz)
Operation
100
5%
0.2-1.0V
0
0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
[1]
1 .2
O u tp u t v o lta g e (V )
0.35m
(flat current
variation )
[2]
0.13m
50
<3.2%
[3]
0.35m
312.5
<1%
this
IBM 90nm
500
<0.01%
0.1-1.1V
ACKNOWLEDGMENT
The author wishes to thank the group members such as
Geliang Yang, Zhu Li, Faen Liu, Jing tu and Ting Guo for
valuable discussions. This research is sponsored by National
Basic Research Program of china.
REFERENCES
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[2]
[3]
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[6]