FMR19N60E

FUJI POWER MOSFET

Super FAP-E3 series

N-CHANNEL SILICON POWER MOSFET

Features

Outline Drawings [mm]

Maintains both low power loss and low noise

Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.00.5V)
High avalanche durability

Equivalent circuit schematic

TO-3PF

Drain(D)

Applications

Gate(G)
Source(S)

Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25C (unless otherwise specied)
Description

Continuous Drain Current

Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt

Symbol
VDS
VDSX
ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt

Maximum Power Dissipation

PD

Drain-Source Voltage

Characteristics
600
600
19
76
30
19
799
15
6.5
100
3.13
150
150
-55 to + 150
2

Tch
Tstg
VISO

Operating and Storage Temperature range

Isolation Voltage

Unit
V
V
A
A
V
A
mJ
mJ
kV/s
A/s

Remarks
VGS = -30V

Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25C
Tc=25C

W
C
C
kVrms

t = 60sec, f = 60Hz

Electrical Characteristics at Tc=25C (unless otherwise specied)

Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage

Symbol
BVDSS
VGS (th)

Zero Gate Voltage Drain Current

I DSS

Gate-Source Leakage Current

Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
I AV
VSD
trr
Qrr

Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge

Conditions
I D =250A, VGS =0V
I D =250A, VDS =VGS
VDS =600V, VGS =0V
VDS =480V, VGS =0V
VGS =30V, VDS =0V
I D =9.5A, VGS =10V
I D =9.5A, VDS =25V

Tch =25C
Tch =125C

VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =9.5A
RGS =8.2
Vcc =300V
I D =19A
VGS =10V
L=1.71mH, Tch =25C
I F =19A, VGS =0V, Tch =25C
I F =19A, VGS =0V
-di/dt=100A/s, Tch=25C

min.
600
2.5
13
19
-

typ.
3.0
10
0.31
26
3600
310
23
26
13
150
20
105
23
30
0.90
0.6
10

max.
3.5
25
250
100
0.365
5400
465
35
39
20
225
30
160
35
45
1.35
-

Unit
V
V

min.

typ.

max.
0.83
40.0

Unit
C/W
C/W

A
nA

S
pF

ns

nC
A
V
s
C

Thermal Characteristics
Description
Thermal resistance

Symbol
Rth (ch-c)
Rth (ch-a)

Note *1 : Tch150C
Note *2 : Stating Tch=25C, IAS =8A, L=22.9mH, Vcc=60V, RG =50
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.

Test Conditions
Channel to case
Channel to ambient

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

See to the 'Transient Themal impeadance' graph.
Note *4 : I F -I D, -di/dt=100A/s, VccBVDSS, Tch150C.
Note *5 : I F -I D, dv/dt=5.0kV/s, VccBVDSS, Tch150C.

FMR19N60E

160

FUJI POWER MOSFET

Allowable Power Dissipation

PD=f(Tc)

10

Safe Operating Area

ID=f(VDS):Duty=0(Single pulse),Tc=25C
t=
1s

140

10s
1

10

100s

120

10

80

ID [A]

PD [W]

100

60

1ms

-1

10

D.C.

Power loss waveform :

Square waveform

40

-2

10

PD

20

tt
-3

10
0

25

50

75

100

125

150

10

10

Tc [C]

50

Typical Output Characteristics

ID=f(VDS):80 s pulse test,Tch=25 C

40

10

VDS [V]

10

Typical Transfer Characteristic

ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C

10

10V
6.0V
5.5V

ID[A]

ID [A]

30

5.0V

20

10

VGS=4.5V
0.1

0
0

100

12
VDS [V]

16

20

24

Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C

0.60

5
VGS[V]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 s pulse test,Tch=25 C
VGS=4.5V

0.55

5.0V

5.5V

0.50

6.0V

gfs [S]

RDS(on) [ ]

10

10

0.45

10V

0.40

0.35

0.30

0.25

0.1
0.1

10

100

ID [A]

10

15

20
ID [A]

25

30

35

40

FMR19N60E

1.0

FUJI POWER MOSFET

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=9.5A,VGS=10V

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250A

0.8

4
VGS(th) [V]

RDS(on) [ ]

0.6

max.

0.4

max.
3

typ.
min.

typ.
0.2

0.0
-50

-25

25

50
Tch [C]

75

100

125

-50

150

Typical Gate Charge Characteristics

VGS=f(Qg):ID=19A,Tch=25 C
14

-25

25

50
75
Tch [C]

100

150

Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz

10

Ciss

12
Vcc= 120V
300V
480V

10

10

C [pF]

8
VGS [V]

125

10

Coss

10

Crss

20

40

60

80

100

120

10

140

-1

10

10

10

VDS [V]

Qg [nC]

100

10

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 s pulse test,Tch=25 C
3

10

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=8.2

td(off)

10

tf

td(on)

t [ns]

IF [A]

10

0.1
0.00

10

tr

0.25

0.50

0.75

1.00

1.25

1.50

1.75

10

2.00

-1

10

VSD [V]

10

ID [A]

10

10

FMR19N60E

FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=19A

10

IAS=19A

800
700

Zth(ch-c) [C/W]

10

600

IAS=12A

500
EAV [mJ]

Maximum Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

400

IAS=8A

-1

10

-2

10

300
200

-3

10

10

100

-6

-5

10

-4

10

-3

10

t [sec]

0
0

25

50

75

100

125

150

starting Tch [C]

-2

10

-1

10

10

FMR19N60E

FUJI POWER MOSFET

WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.
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