FDPF5N50T

FDPF5N50T
N-Channel UniFETTM MOSFET

500 V, 5 A, 1.4
Features
Description
RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A
UniFETTM MOSFET is Fairchild Semiconductors high voltage

MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Low Gate Charge (Typ. 11 nC)

Low Crss (Typ. 5 pF)
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
Applications
LCD/LED TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supplylications
D
G
D
S
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage

- Continuous (TC = 25oC)
FDPF5N50T
500
Unit
V
30
5*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
- Continuous (TC = 100oC)

- Pulsed
(Note 1)
20*
(Note 2)
225
mJ
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds
TL
3*
- Derate Above 25oC
28
0.22
W/oC
-55 to +150
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDPF5N50T
RJC
Thermal Resistance, Junction to Case, Max.
4.5
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
2012 Fairchild Semiconductor Corporation

FDPF5N50T Rev. C1
Unit
o
C/W
www.fairchildsemi.com
FDPF5N50T N-Channel UniFETTM MOSFET
November 2013
Part Number
FDPF5N50T
Top Mark
FDPF5N50T
Electrical Characteristics
Symbol
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25oC unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
0.6
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 A, VGS = 0 V, TJ = 25oC

ID = 250 A, Referenced to
25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC
10
VGS = 30 V, VDS = 0 V
100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 A
3.0
5.0
Static Drain to Source On Resistance
VGS = 10 V, ID = 2.5 A
1.15
1.4
gFS
Forward Transconductance
VDS = 20 V, ID = 2.5 A
4.3
VDS = 25 V, VGS = 0 V,
f = 1 MHz
480
640
pF
66
88
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Miller Charge
VDS = 400 V, ID = 5 A,
VGS = 10 V
(Note 4)
pF
11
15
nC
nC
nC
13
36
ns
22
54
ns
28
66
ns
20
50
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 25
(Note 4)
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
20
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5 A
1.4
trr
Reverse Recovery Time
300
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/s
1.8
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 18 mH, IAS = 5 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3: ISD 5 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4: Essentially independent of operating temperature typical characteristics.

FDPF5N50T Rev. C1
Package Marking and Ordering Information
Figure 1. On-Region Characteristics

20
20
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
10
ID,Drain Current[A]
Figure 2. Transfer Characteristics
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
0.1
*Notes:
1. VDS = 20V
2. 250s Pulse Test
0.04
0.1
2. TC = 25 C
1
10
VDS,Drain-Source Voltage[V]
0.1
30
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
5
6
7
VGS,Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
70
2.5
VGS = 10V
2.0
VGS = 20V
1.5
150 C
10
o
25 C
*Notes:
1. VGS = 0V
1.0
*Note: TJ = 25 C
6
ID, Drain Current [A]
1
0.4
12
Figure 5. Capacitance Characteristics
Ciss
1.6
10
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
750
2. 250s Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]
1000
Capacitances [pF]
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
3.0
RDS(ON) [],
Drain-Source On-Resistance
*Note:
1. VGS = 0V
2. f = 1MHz
500
Coss
250
VDS = 100V
VDS = 250V
VDS = 400V
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]

FDPF5N50T Rev. C1
30
*Note: ID = 5A
4
8
Qg, Total Gate Charge [nC]
12
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-75
*Notes:
1. VGS = 0V
2. ID = 250A
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 2.5A
0.5
-75
175
Figure 9. Maximum Safe Operating Area
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Drain Current

vs. Case Temperature
6
30
30s
100s
1ms
10
10ms
DC
Operation in This Area

is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
2. TJ = 150 C
3. Single Pulse
3
2
1
0.01
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Thermal Response [ZJC]
ZJC(t), Thermal Response [oC/W]
Figure 11. Transient Thermal Response Curve

10
0.5
0.2
0.1
PDM
0.05
0.1
t1
0.02
1. ZJC(t) = 4.5 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10

FDPF5N50T Rev. C1
t2
*Notes:
0.01
-4
10
-3
10
-2
-1
10
10
10
10
[sec]
t1Rectangular
, RectangularPulse
Pulse Duration
Duration [sec]
10
10
Typical Performance Characteristics (Continued)
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FDPF5N50T Rev. C1
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDPF5N50T Rev. C1
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FDPF5N50T Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FDPF5N50T Rev. C1
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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FDPF5N50T

N-Channel UniFETTM MOSFET

RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A

UniFETTM MOSFET is Fairchild Semiconductors high voltage

Low Gate Charge (Typ. 11 nC)

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Drain to Source Voltage

Gate to Source Voltage

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

- Continuous (TC = 100oC)

Operating and Storage Temperature Range

- Derate Above 25oC

*Drain current limited by maximum junction temperature

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2012 Fairchild Semiconductor Corporation

FDPF5N50T N-Channel UniFETTM MOSFET

TC = 25oC unless otherwise noted.

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

ID = 250 A, VGS = 0 V, TJ = 25oC

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125oC

Gate Threshold Voltage

VGS = VDS, ID = 250 A

Static Drain to Source On Resistance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain Miller Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2012 Fairchild Semiconductor Corporation

FDPF5N50T N-Channel UniFETTM MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

IS, Reverse Drain Current [A]

Figure 5. Capacitance Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

2. 250s Pulse Test

Figure 6. Gate Charge Characteristics

Figure 4. Body Diode Forward Voltage

2012 Fairchild Semiconductor Corporation

FDPF5N50T N-Channel UniFETTM MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

ID, Drain Current [A]

ID, Drain Current [A]