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Adam J. Hauser, Evgeny Mikheev, Nelson E. Moreno, Tyler A. Cain, Jinwoo Hwang, Jack Y. Zhang, and
Susanne Stemmer
Citation: Applied Physics Letters 103, 182105 (2013); doi: 10.1063/1.4828557
View online: http://dx.doi.org/10.1063/1.4828557
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/103/18?ver=pdfcov
Published by the AIP Publishing
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(Received 18 September 2013; accepted 17 October 2013; published online 31 October 2013)
The Hall coefficient of epitaxial NdNiO3 films is evaluated in a wide range of temperatures, from the
metallic into the insulating phase. It is shown that for temperatures for which metallic and insulating
regions co-exist, the Hall coefficient must be corrected for the time-dependence in the longitudinal
resistance, which is due to a slow evolution of metallic and insulating domains. The positive Hall and
negative Seebeck coefficients, respectively, in the metallic phase are characteristic for two bands
participating in the transport. The change in the sign of the Hall coefficient to negative values in the
insulating phase is consistent with the suppression of the contribution from the large hole-like Fermi
C 2013 AIP Publishing LLC.
surface, i.e., the formation of a (pseudo)gap due to charge ordering. V
[http://dx.doi.org/10.1063/1.4828557]
The rare earth nickelates (chemical formula RNiO3,
where R is a trivalent rare earth ion) undergo a metal-to-insulator transition (for R
6 La) upon cooling that has generated
significant interest for understanding charge and spin ordering
phenomena in correlated materials1 and for potential application in novel switching devices.25 NdNiO3 is a prototype
RNiO3, exhibiting a metal-to-insulator transition (MIT) at a
temperature (TMIT) of 200 K (in bulk)6 that is accompanied
by a lowering of the symmetry from orthorhombic to monoclinic, charge ordering,79 and a complex antiferromagnetic
state.1012 The MIT is first-order, resulting in the co-existence
of metallic and insulating regions over a finite temperature
range, and time-dependence of the transport coefficients
within the two-phase region.13,14 The Hall coefficient (RH) is
a useful tool for the study of changes in the electronic structure at the MIT. Unusual, non-monotonic features have been
reported recently in the temperature-dependence of RH of
RNiO3s.5,15 In this letter, we discuss studies of the resistivity,
RH, and the Seebeck coefficient of NdNiO3 films. We show
that for measurements at temperatures that lie within the phase
coexistence region, RH must be corrected for the drift in
the resistivity over time. We interpret the results for the
drift-corrected RH in terms of the current understanding of the
electronic states of NdNiO3.
Epitaxial NdNiO3 films were grown on (001) LaAlO3
by rf magnetron sputtering at a substrate temperature of
700 C. The total growth pressure of a 3:1 Ar:O2 mixture
was 300 mTorr and the rf power was 80 W, yielding a
growth rate of 3.3 nm/h. High-resolution x-ray diffraction
(XRD) measurements (Phillips MRD XPert Thin Film
Diffractometer) and high-angle annular dark-field (HAADF)
scanning transmission electron microscopy (STEM) were
performed to confirm the epitaxial orientation relationships.
In the following, we index all reflections and planes using
pseudo-cubic unit cells for the NdNiO3 films and the rhombohedral substrate, respectively. Films were patterned into
Hall bar structures (300 lm channel width) via contact lithography. Ohmic contacts of Ni(20 nm)/Au(300 nm) were
deposited by electron beam evaporation, and device isolation
was achieved with a wet etch of 25% HCl in water.
Measurements of the in-plane longitudinal resistivity (Rxx),
0003-6951/2013/103(18)/182105/4/$30.00
FIG. 1. (a) On-axis XRD around the 002 reflection of a 16.5 nm NdNiO3
film grown on (001) LaAlO3. (b) Off-axis XRD of the same film at a tilt
angle of W 45 , showing 011 reflections of film and substrate. The double
peak of the LaAlO3 substrate is due to twinning. (c) Cross-section
HAADF-STEM image. (d) Longitudinal resistivity of a 16.5 nm film as a
function of temperature measured upon cooling and heating, respectively.
103, 182105-1
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Hauser et al.
FIG. 2. (a) Time-dependence of the longitudinal resistance at different temperatures around TMIT. Shown is the percentage change from the value measured 5 min after the temperature has stabilized, upon cooling from room
temperature (filled symbols) and heating from 10 K (open symbols), respectively. (b) Amount of drift, as defined in (a), after 5 h, as a function of temperature under cooling (blue filled circles) and heating (orange open triangles),
respectively. (c) Raw Rxy data (dashed lines) as a function a magnetic field
measured over 6 h of continuous field sweeps from 9 to 9 T at T 80 K.
Also shown is the drift-corrected Rxy (solid line).
bands that cross the Fermi level, giving rise to a small electron pocket and a large hole Fermi surface, respectively.2326
The large hole Fermi surface dominates RH. In contrast, the
Seebeck coefficient, shown in Fig. 3(c) is negative,
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182105-3
Hauser et al.
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182105-4
24
Hauser et al.
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