Solutions Topic 4

4.1
(a) VG > VTN corresponds to inversion region operation. (b) VG << VTN corresponds to the accumulation region. (c) VG <
VTN corresponds to a bias in the depletion region .

4.9

a 0 0.8V I D

=0

(b) VGS - VTN = 0.2V , V DS = 0.25V Saturation region

K n' W
VGS VTN 2 200 A2 5m 1 0.8 2 40.0 A
ID
2 L
2 V 0.5m
(c) VGS - VTN = 1.2V , V DS = 0.25V triode region
V
W
A 5m
0.25

2 0.8
VGS VTN DS V DS 200 2
0.25 538 A
L
2
2
V 0.5m

- VTN = 2.2V , V DS = 0.25V triode region

I D K n'
(d ) VGS

I D K n'

V
W
A

VGS VTN DS V DS 200 2

L
2
V

200 2
L
V

e K n K n' W

5m
0.25

3 0.8
0.25 1.04 mA
2
0.5m

5m
mA

2.00 2
V
0.5m

4.11
Identify the source, drain, gate and bulk terminals and find the current I in the transistors in Fig. P-4.3.
W
=
L

+0.2 V

10
1

G
+5

(a)

V GS

DS

+
VGS

-0.2 V

+5

B
D

W
=
L

10
1

DS

(b)

(a)

VGS VG V S 5V V DS V D VS 0.2V Triode region operation

I = I D K n'

(b)

W
L

VGS VTN

V DS
2

A 10
0.2

V DS 100 2
5 0.70
0.2 840 A
2
V 1

VGS VG VS 5 0.2 = 5.2V VDS VD VS 0 0.2 0.2V

I = I S 100 2
V

0.2
10
5.2 0.70 0.2 880 A
2
1

Note that the source-bulk junction is forward biased by 0.2 V! This is well below the
Turn-on voltage, so we should be safe in neglecting the bulk current.

4.15

a Ron
b Ron

1
K n'

W
VGS VTN
L

1
23.0
6 100
100 x10
5 0.65
1

1
50.0
6 100
100 x10
2.5 0.50
1

4.17

Ron

ID
0.1V
10
A
0.010 10m | K n

33.9 2
10 A
VGS VTN 0.5VDS VDS 5 2 0.5 0.1 0.1
V

Note that this will require

W K n 33.9 339,000

!
L K n' 10 4
1

4.18

Picking two values in saturation :

Kn
4 VTN 2 and 140A K n 3 VTN 2
2
2
Taking the ratio of these two equations :

395A

A
V 2 1.25
A
1
100 2
V
From the graph, VTN is somewhat less than 2 V. VTN > 0 enhancemen t - mode transisto r.
This qualitativ e observatio n agrees with our calculated value for VTN .
395 4 VTN
A

VTN 1.5 V K n 125 2

2
140 3 VTN
V
2

125

 a For VGS 0, VGS VTN and I D 0 b For VGS 1V , VGS VTN and I D 0
c VGS VTN = 2 - 1 = 1V and VDS 3.3 | VDS VGS VTN so the device is in the

saturation region

375 A 5m
W
A 5m
mA
2

2 1 V 2 1.88 mA | K n K n'
375 2
3.75 2
2
2 V 0.5um
L
V 0.5um
V
VTN = 3 - 1 = 2V and V DS 3.3 | V DS VGS VTN so the device is in the saturation region

ID

d VGS

ID

375 A 5m
2

3 1 V 2 7.50 mA
2
2 V 0.5m

4.20

4.23
(a) VGS - VTN = 2.6 V, VDS = 3.3 V. VDS > VGS - VTN Saturation region
(b) VGS < VTN Cutoff region
(c) VGS - VTN = 1.3 V, VDS = 2 V. VDS > VGS - VTN Saturation region
(d) VGS - VTN = 0.8 V, VDS = 0.5 V. VDS < VGS - VTN triode region
(e) The source and drain of the transistor are now reversed because of the sign change in V DS. Assuming the voltages are
defined relative to the original S and D terminals as in Fig. P4.11(a), V GS = 2 - (-0.5) = 2.5 V, V GS - VTN = 2.5 0.7 =
1.8 V, and VDS = 0.5 V triode region. The "drain-substrate" diode is forward biased by 0.5 V.
(f) The source and drain of the transistor are again reversed because of the sign change in V DS. Assuming the voltages
are defined relative to the original S and D terminals as in Fig. 4.54(b), V GS = 3 - (-3) = 6 V, VGS - VTN = 6 0.7 = 5.3
V, and VDS = 3 V triode region , but the source-substrate diode is forward biased and will be conducting heavily. The
transistor would probably be destroyed.

4.27
VDS = 3.3V, VGS VTN = 1.3 V; VDS > VGS - VTN so the transistor is saturated.

a g m

K n VGS VTN 250

A 20 m

2 0.7 6.50 mS
V 2 1m

 b g m

K n VGS VTN 250

A 20m

3.3 0.7 13.0 mS

V 2 1m

4.28

a g m

i D
760 140 A

310 S | As a check, we can use the results from Problem 4.18.

vGS
53 V

A
4 1.5V 313 S
V2
390 15 A
A

188 S | Checking : g m 125 2 3 1.5V 188 S

42 V
V

g m K n VGS VTN 125

b g m

i D
vGS

4.34
(a) Since VDS = VGS and VTN > 0 for both transistors, both devices are saturated.

I D1

K n' W
K n' W
2
VGS1 VTN and I D 2
VGS 2 VTN 2

2 L
2 L

Therefore

From the circuit, however, ID2 must equal ID1 since IG = 0 for the MOSFET:

I I D1 I D 2 or

K n' W
K'
VGS1 VTN 2 n W VGS 2 VTN 2
2 L
2 L
which requires VGS1 = VGS2. Using KVL:

V DD V DS1 VDS 2 VGS1 VGS 2 2VGS 2

VGS1 VGS 2
I

V DD
5V
2

K n' W
VGS1 VTN 2 100 A2 10 5 0.75 2 V 2 9.03 mA
2 L
2 V 1

(b) The current simply scales by a factor of two (see last equation above), and I D = 18.1 mA.
(c) For this case,

I D1

K n' W
K'
VGS1 VTN 2 1 + VDS1 and I D 2 n W VGS 2 VTN 2 1 + VDS2
2 L
2 L
.

Since VGS = VDS for both transistors

I D1

K n' W
K'
VGS1 VTN 2 1 + VGS1 and I D 2 n W VGS 2 VTN 2 1 + VGS2
2 L
2 L
and ID1 = ID2 = I

K n' W
K'
VGS1 VTN 2 1 + VGS1 n W VGS 2 VTN 2 1 + VGS2
2 L
2 L
which again requires VGS1 = VGS2 = VDD/2 = 5V.

K n' W
VGS1 VTN 2 1 VDS 100 A2 10 5 0.75 2 V 2 1 .04 5 10.8 mA
2 L
2 V 1

4.42

VTN 0.75 0.75 1.25 0.6 0.6 1.19V

(a) VGS VTN so the transisto r is cut off, and I D 0.
(b) VGS VTN so the transisto r is cut off, and I D 0.
(c) VGS VTN 2 1.19 0.81V < VDS 3.3 V Saturation region
375 x10 6 5
2
ID

2 1.19 1.23 mA
2
0. 5
(d ) VGS VTN 3 1.19 1.81V < VDS 3.3 V Saturation region
ID

375 x10 6
2

(e) K n K n'

5
2

3 1.19 6.14 mA
0. 5

W
mA
5
375 x10 6
3.75 2
L
V
0.5

4.46

0.85 1.5 1.5 V SB 0.75 0.75 | Solving for V SB yields V SB 5.17 V

Checking :VTN 1.5 1.5 5.17 0.75 0.75 0.85 V

4.49
The pinchoff points and threshold voltage can be estimated directly from the graph: e. g. V GS = -3 V curve gives VTP =
2.5 - 3 = - 0.5 V or from the VGS = -5 V curve gives VTP = 4.5 - 5 = - 0.5 V.
Alternately, choosing two points in saturation, say ID = 1.25 mA for VGS = -3 V and ID = 4.05 mA for VGS = -5 V:

V VTP
I D1
GS1
or
VGS 2 VTP
I D2

1.25 3 VTP

4.05 5 VTP

Solving for VTP yields : 0.8VTP 0.4V and VTP 0.500V .

Solving for K p : K p

2I D

VGS VTP 2

21.25mA

3 0 .5 2

A
400 2
mA W K p
V 10
0.400 2 |
'
A
L Kp
1
V
40 2
V

4.51

(a ) VGS VTP 1.1 0.75 0.35V | VDS 0.2V Triode region

40A 20
0.2 0.2 40.0 A
1.1 0.75
2
2
V 1
(b) VGS VTP 1.3 0.75 0.55V | VDS 0.2V Triode region
ID

ID

40A 20
0.2 0.2 72.0 A
1.3 0.75
2
2
V 1

(c) VTP 0.75 .5 1 .6 0.6 0.995V

VGS VTP 1.1 0.995 0.105V | V DS 0.2V saturation region

1 40A 20
2
ID
1.1 0.995 4.41 A
2
2 V 1
(d ) VGS VTP 1.3 0.995 0.305V | VDS 0.2V triode region
ID

0.2 0.2 32.8 A

40A 20
1.3 0.995
2
2
V 1

4.57

Ron

4.91

0.1V
0.2
0.5 A

Kp

ID
0.5 A
A

0.629 2
VGS VTP 0.5VDS VDS 10V 2V 0.5 0.1V 0.1V
V

800

5V

Drain Current (uA)

600

Q-point
(4.84)
400

4V

Q-point
(4.83)

200

3V

2V
0

Drain Voltage (V)

VGS

V DD
3V | 6 = 10 4 I D V DS | V DS 0, I D 0.6mA | I D 0, V DS 6V
2

From the graph, Q-pt: (140 A, 4.6V) in the saturation region. --- [See Q-point 4.83 above.]

4.93

a1

Direct approach : VEQ

3.13 VGS 24 x10 3 I D VGS

100k
10V 3.13V | Assume saturation
100k 220k
100 x10 6 6
VGS 1 2
24 x10 3
2

7.2VGS2 13.4VGS 4.08 0 VGS 1.49V and I D 68.4 A

V DS 10 36 x10 3 I D 7.54 V | VDS VGS VTN Saturation is correct.
Checking : V EQ 24 x10 3 I D VGS 3.13V which is correct.

Q po int : 68.4 A, 7.54 V

a 2 Assume saturation
ID

and use Eqs. (4.55) and (4.56)

210 4 6 / 1 24 x10 3

1 210

6 24 x10 3.13 1 1
3

V DS 10 36 x10 3 I D 7.52 V | Saturation is correct.

4.104

68.8 A

K n' 100 A / V 2 | VTN 0.75V | Choose V DS VRD V RS 5V and VGS VTN 1V

5
5
10k | R D
10k
0.5mA
0.5mA
2I D
2I
W 10
VTN
1V and K n D2 1mA / V 2

Kn
L
1
1V

RS
VGS

VG VS VGS 5 1 0.75 6.75V

15V

R2

15V
| R2 600k
1.33M 1.5M
6.75V

6.75V

R1
RR
15V | 6.75V 1 2
R1 R2
R1 R2

6.75V

R1
15V R1 1.23M 1.2M
R1 1.5M

R1 1.2M, R2 1.5M, RS 10k, R D 10k,

W 10

L
1

4.107

6 x10 4
2

Assume Saturation . For I G = 0, VGS 27 x10 3 I D 27 x10 3

2
GS

8.1V

65.8VGS 129.6 0 VGS 3.36 V and I D 124 A

VDS 12 78000 I D 2.36 V | V DS VGS VTN so saturation is ok.

Q - Point : 124A, 2.36V

4.109

VGS 4 2

Assume Saturation . I G 0. Assume power supply is split in thirds : VDS = VR D = VR S = 5V

Kn 2
VTN and this will require VGS > 0.
2
0.25mA/V 2
VGS 2.5 2
2

Note that although, this is a depletion - mode device, I D exceeds

RS

5V
2.5k 2.4k and VR S will be 4.8 V | 2mA =
2mA

2mA
1.50V | VG VS VGS 4.8 1.5 6.3V
0.125mA

VGS 2.5
6.3 = 15

R1
R1 = 620 k and R2 = 910 k is one convenient possibilit y.
R 1 R2

Another is R1 = 62 k and R2 = 91 k. Both choices have I R 2 << I D .

RD

15 5 4.8V
2mA

2.60k 2.70 k.

4.111

The transisto r is saturated by connection . Using KVL,

100 x10 6 20 A
2
VGS 12 10 I D and I D

2 VGS 0.75V
2
1 V
100VGS2 149VGS 44.25 0 VGS 1.08V , 0.409V VGS 1.08 V since VGS must
5

100 x10 6 20 A
2

2 1.08 0.75V
2
1 V
12 1.08
I D 109 A | Checking : I D
109 A | Q - Point : 109 A,1.08 V
10 5

exceed the threshold voltage. | I D

(b) Using KVL, VDS = 107 IG +VGS. But, since IG = 0, VGS = VDS. Also VTN = 0.75 V > 0, so the transistor is
saturated by connection.

+12 V
W = 10
L
1
10 M

330 k
IDS

+
VDS

+
V GS

K n' W
ID
VGS VTN 2 100 A2 20 VGS 0.75 2
2 L
2 V 1
VGS 12 330k I D I G 10M I G but I G = 0
VGS 12 330k I D

2
VGS 12 3.30 x10 5 10 3 2 VGS 0.75
V

2
330VGS 494VGS 173.6 0 yields VGS 0.933V , 0.564V

VGS must be 0.933 V since 0.564 V is below threshold.

100 A 20
0.933 0.75 2 33.5 A
2
2 V 1

ID

and VDS = VGS

Q-Point: (33,5 A, 0.933 V) Checking: ID = (12-0.933)V/330k = 33.5 A.

4.125
(a) Both transistors are saturated by connection and the two drain currents must be equal.
I D1

K n1
K
VGS1 VTN 1 2 and I D 2 n 2 VGS 2 VTN 2 2
2
2

But since the transistors are identical, ID1 = ID2 requires VGS1 = VGS2 = VDD/2 = 2.5V.

I D1 I D 2

100 x10 6 20
2

2.5 1 = 2.25 mA
2
1

(b) For this case, the same arguments hold, and VGS1 = VGS2 = VDD/2 = 5V.

I D1 I D 2

100 x10 6
2

20
2

5 1 = 16.0 mA
1

(c) For this case, the threshold voltages will be different due to the body-effect in the upper transistor. The drain currents
must be the same, but the gate-source voltages will be different:

VGS1 VTN 1
VTN 1 = 1V

2I D
2I D
; VGS 2 VTN 2
; VGS1 VGS 2 5V .
Kn
Kn

VTN 2 1 0.5 VGS1 0.6 0.6

Combining these equations yields

5 - 2VGS1 0.5 VGS1 0.6 0.6 0 VGS1 2.27V ; VGS 2 5 VGS1 2.73V
I D 2 = I D1

100 x10 6 20
2

2.27 1 1.61 mA.

2
1

Checking :VTN 2 1 0.5 2.27 0.6 0.6 1.46V

6

I D2 =

100 x10 20
2

2.73 1.46 1.61 mA.

2
1

4.130
For VGS = 5 V and VDS = 0.5 V, the transistor will be in the triode region.

ID

5 0.5V
68k

66.18A | 66.18 x10 6 100 x10 6

5 0.75

0.5
W 0.331
1

0.5 |
2
L
1
3.02

4.132
(a) The transistor is saturated by connection. For this circuit,

VGS V DD I D R 15 75000 I D
4 x10 5 1
2
15 75000 I D 0.75 153 A
2 1
15 75000 I D 3.525V

ID
VGS

V DS VGS 3.525V | Q - point : 153 A,3.53 V

(b) Here the transistor has VGS = -15 V, a large value, so the transistor is most likely operating in the triode region.

V DS 15
V

4 x10 5 15 0.75 DS V DS V DS 0.347 V and I D 195 A.

75000
2

15 0.347
Checking : I D
V 195A
Q - point : 195 A,-0.347 V
785k
ID

V DS 0.347V VGS VTP 15 0.75 14.25V

Checking the region of operation:

Triode region is correct
4.134

(a) I DP I DN , and both trans istors are saturated by connection . 10 = -VGSP VGSN
1 40 A

2 V2

1 100A
20
2

10 VGSN 0.75

2 V2
1

9.25 VGSN

20
2

VGSN 0.75
1

2.5 VGSN 0.75 VGSN 4.04V | VGSP 5.96V

I DP I DN 10.8 mA | VO VGSN 4.04V

(b) Everything is the same except the currents scale by 80/20 :
I DP I DN 43.2 mA

c Since the gate current is zero, VDS

= VGS and the NMOS transisto r is saturated.

However, VSGP 10 V, so the PMOS transisto r will probably be in the triode region.
VDSP = -10 + VGSN . Equating the drain currents,
40A

2
V

20

10 0.75

10 VGSN
2

1 100A
10 VGSN

2 V2

20
2

VGSN 0.75
1

2
Rearanging yields a quadratic equation : 3.5VGSN
4.25VGSN 83.6 0

1 100A 20
2
VGSN 5.70 V , VDSP 4.30 V , I DN

5.70 0.75 24.5 mA

2
2 V 1
4.30
40 A 20
Checking : I DP
10 0.75
4.30 24.4 mA
2
2
V 1
(d ) Everything is the same except the currents scale by 80/20 :
I DP I DN 98.0 mA

4.137

4V
2mA. For I D 0, VDS 4V . VSD 4V
2k
300k
4V
3V VSG 3V
300k 100k

For VDS 0, I D
VGS VEQ

From the graph, the transistor is operating below pinchoff in the linear region.

PMOS Output Characteristics

4500
4000
3500
3000
2500
VGS = -5
V
Drain Current
(uA)

VGS = -4 V
2000

VGS = - 3 V

VGS = -2 V

Load Line

Q-Point

1500
1000
500
0
1

-1

-2

-3

-4

-5

-6

-500
Drain-Source Voltage (V)

Q-point: (1.13 mA, 1.75 V)

4.138

(a ) VGG

5
20
15V
5
5 4 x10

VGS 0.75 2 - VGS

7.5V | 7.5 = 10 I D - VGS | 7.5 = 10

2
2 1

4VGS2 5.9VGS 1.5 0 VGS 1.148V and I D 63.5A

VDS 15 100k 50k I D 5.48V | Q - point : 63.5 A,5.48 V

(b) For saturation , VDS VGS VTP

15 100k R I D VGS 0.75 R 130 k

4.139
Setting W=20U, L=1U, LEVEL=1, KP=40U, VTO=-0.75 yields results identical to the previous problem.

4.147

a Assume an equal voltage (3V) split

between R D , R S and VDS . We need V DS VGS VTP

or - 3 VGS VTP . Choose VGS VTP 1V . K n

2 I D

VGS VTP

2 500A
W 25

.
1
L
1

VGS 1 0.75 1.75V . V EQ 3 VGS 4.75V .

4.75 = 9

R1
9 R1 R2
9

1M. R2 1.7 M 1.8M.

R1 R2 R2 R1 R2 R2

4.75 9

R1
2 M
R1 2.01M 2M | V EQ 9
4.74V
R1 R2
1.8M 2M

4.74V 1.75V
933
5.97k 6.2k | R D
6.0k 6.2k
0.5mA
0.5mA
Note that R 1 is connected between th e gate and + 9 V, and R 2 is connected between
RS

the gate and ground. R1 2M, R2 1.8M, RS RD 6.2k, W / L 25 / 1

b For the NMOS case, choose W/L = 40/1.

The resistors now have the same values

except R 2 is now connected between th e gate and + 9 V, and R 1 is connected between

the gate and ground.

4.154

a R = 0, VGS 0, VDS 5V , VGS VP VP 3V Saturation

I D I DSS 500A, VDS 5V | Q - point : 500 A, 5.00 V

Region. Therefore

(b) R = 0, VGS 0, V DS 0.25V , VGS VP 3 triode region

ID

2 I DSS
V DS
2 5 x10 4
V

GS P
DS
2
V P2
3 2

Q - point : 79.9 A,0.25 V

0 3 0.25 0.25 79.86A

V
8200 I DS

(c) Assume Saturation | VGS = -8200 I D | I D I DSS 1 GS 5 x10 4 1

VP
3

7.471x10 6 I D2 7.467 x10 3 I D 1 0 | Using the quadratic equation : I D 159.3 A, 840.3 A

5V
610 A. | V DS 5 8200 I D 3.696V | Q - point : 159 A, 3.70 V
8.2k
Checking saturation : VGS VP 8200 I D 3 1.70V | VDS 3.70V - Ok.
I D 159 A since I D

4.158
Assume J1 is in the triode region and J2 is saturated.

(a) I D1
I D2

2 I DSS
V
V
V
2 0.2mA

VGS1 V P DS1 V DS1

0 2 DS1 V DS1 10 4 2 DS1 V DS1
2
2
2
2
2
VP
2

V
I DSS 1 GS 2
VP

0.5mA 1 GS 2
4

0.5mA 1 DS1
4

V
V

I D1 I D 2 | 10 2 DS1 V DS1 0.5mA 1 DS1 13VDS2 1 72VDS1 80 0

2
4

V DS1 4V , 1.538V VDS1 1.538V | I D1 189.3A

4

J 1 : 189 A,1.54V J 2 : 189 A,7.46V

(b) Require V DS1 VGS1 VP1 0 2 2 V but V DS1 1.54 V independen t of

V for V large enough to pinch off J 2 . Thus J 1 cannot be pinched off.

4.163

(a) Use V = 6V . For R = 0, VGS 0, and I D I DSS 500 A | Q - point : 500 A, 6.00 V

VGS
10 4 I D
500A 1
(b) Assume saturation : I D I DSS 1
VP
3

VGS 10 4 I D 1.41V | VDS 6 10 4 I D 4.59V

I D 140.8A

VGS VP 1.41V 3 1.59 V and saturation is correct : Q - point = 141 A, 4.59 V

VGS
10 5 I D
500 A 1
(c) Assume saturation : I D I DSS 1
V
3
P

VGS 10 4 I D 2.35V | V DS 6 10 5 I SD 3.65V

I D 23.49 A

VGS VP 2.35V 3 0.650 V and saturation is correct : Q - point = 23.5 A,3.65 V