AOP605

Complementary Enhancement Mode Field Effect Transistor

General Description

Features
n-channel
p-channel
-30V
VDS (V) = 30V
ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)

The AOP605 uses advanced trench technology to

provide excellent R DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP605 is Pb-free (meets ROHS
& Sony 259 specifications). AOP605L is a Green
Product ordering option. AOP605 and AOP605L are
electrically identical.

RDS(ON)
< 28m

(VGS = 10V)

< 43m (VGS = 4.5V) < 58m (VGS = -4.5V)

D1

D2
S2
G2
S1
G1

1
2
3
4

8
7
6
5

D2
D2
D1
D1

G1

G2

S1

S2

PDIP-8

p-channel

n-channel

Absolute Maximum Ratings T A=25C unless otherwise noted

Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
20
Continuous Drain
Current A
Pulsed Drain Current

TA=25C
ID
IDM

TA=70C
B

TA=25C
Power Dissipation

Junction and Storage Temperature Range

Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Alpha & Omega Semiconductor, Ltd.

TJ, TSTG

-5.3
2.5

1.6

1.6

-55 to 150

-55 to 150

RJL
Symbol

t 10s
Steady-State
Steady-State

-6.6
-30

RJA

RJA
RJL

Units
V

20

7.5
30

Symbol
t 10s
Steady-State
Steady-State

Max p-channel
-30

2.5

PD

TA=70C

< 35m (VGS = -10V)

V
A

W
C

Typ
40
67
33

Max
50
80
40

Units
C/W
C/W
C/W

Typ
38
66
30

Max
50
80
40

Units
C/W
C/W
C/W

AOP605

n-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

Conditions

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Min

ID=250A, VGS=0V

IGSS

Gate-Body leakage current

VDS=0V, VGS=20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

TJ=55C

VGS=10V, ID=7.5A
Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Body Diode Forward Voltage

IS=1A, VGS=0V
Maximum Body-DiodeContinuous Current

VGS=4.5V, ID=6.0A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance.
Coss
Crss

Reverse Transfer Capacitance

Rg

Gate resistance

100

nA

22.6

28

33

43

16
0.76

680
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
Total Gate Charge
Qgs

12

VGS=4.5V, VDS=15V, ID=7.5A

Gate Source Charge

1.8

TJ=125C
VDS=5V, ID=7.5A

Units
V

VDS=24V, VGS=0V

Zero Gate Voltage Drain Current

RDS(ON)

Max

30

IDSS

IS

Typ

m
m
S

820

pF

102

pF

77

pF

3.6

13.84

16.6

nC

6.74

8.1

nC

1.82

nC

Qgd

Gate Drain Charge

3.2

nC

tD(on)

Turn-On DelayTime

4.6

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery time

Qrr

Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/s

VGS=10V, VDS=15V, RL=2.0,

RGEN=6

4.1

ns

20.6

ns

IF=7.5A, dI/dt=100A/s

16.5

5.2

ns
20

7.8

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 3 : June 2005

FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10V

25

20

6V
5V
4.5V

ID (A)

20
15

3.5V

10

12
8
125C

VGS=3V

VDS=5V

16

4V
ID(A)

30

25C

0
0

0.5

Normalized On-Resistance

50
RDS(ON) (m)

1.5

2.5

3.5

4.5

1.7

60

VGS=4.5V

40
30
20

VGS=10V

1.6

VGS=10V

ID=7.5A

1.5
1.4

VGS=4.5V

1.3
1.2
1.1
1
0.9
0.8

10
0

10

15

20

50

100

150

200

Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature

ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

1.0E+01

70
60

1.0E+00

ID=7.5A

50

IS Amps

RDS(ON) (m)

VGS (Volts)
Figure 2: Transfer Characteristics

VDS (Volts)
Fig 1: On-Region Characteristics

125C

40

1.0E-01
125C

1.0E-02
1.0E-03

30

25C

25C

1.0E-04

20

1.0E-05

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

VSD (Volts)
Figure 6: Body diode characteristics

1.0

AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
1000

10

VDS=15V
ID=7.5A

800
Capacitance (pF)

VGS (Volts)

f=1MHz
VGS=0V

900

6
4
2

700
Ciss

600
500
400
300

Coss

200
100

0
0

10

12

Crss

14

Qg (nC)
Figure 7: Gate-Charge characteristics

10

1ms

100s

0.1s
1s
DC
0.1

10

ZJA Normalized Transient

Thermal Resistance

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

30

20

0
0.001

100

VDS (Volts)

10

25

10

10s
0.1

20

TJ(Max)=150C
TA=25C

30

10s

10ms
1

15

40

TJ(Max)=150C
TA=25C

RDS(ON)
limited

10

VDS (Volts)
Figure 8: Capacitance Characteristics

Power W

ID (Amps)

100

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000

AOP605

p-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Conditions

Min

ID=-250A, VGS=0V

-30

Zero Gate Voltage Drain Current

-1
TJ=55C

-5

Gate-Body leakage current

VDS=0V, VGS=20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.2

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

30

VGS=-10V, ID=-6.6A
TJ=125C

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-5A

gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

IS

VDS=-5V, ID=-6.6A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr
Qrr

VGS=-10V, VDS=-15V, ID=-6.6A

VGS=-10V, VDS=-15V, RL=2.3,

RGEN=3

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/s

100

nA

-2.4

28

35

37

45

44

58

13
-0.76

m
m
S

-1

-4.2

1100

pF

190

pF

122

pF

3.6

4.4

18.5

22.2

nC

9.6

11.6

nC

2.7

nC

4.5

nC

7.7

ns

5.7

ns

20.2

ns

9.5
IF=-6.6A, dI/dt=100A/s

Units

-2

920
VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)

Max

VDS=-24V, VGS=0V

IGSS

RDS(ON)

Typ

20

ns
24

8.8

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C.
The value in any en
given
application
application
depends
depends
on the
on the
user's
user's
specific
specific
board
board
design.
design.
TheThe
current
current
rating
rating
is based
is based
on the
on the
t t 10s
10s
thermal
thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 3 : June 2005

FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30

30
-10V
25

-4.5V

-6V
-5V

20

20

-4V
-ID(A)

-ID (A)

VDS=-5V

25

15
-3.5V

10

15
10
125C

5
VGS=-3V

25C

0
0

0.5

60

1.5

2.5

3.5

4.5

1.60
Normalized On-Resistance

55
VGS=-4.5V

50
45
RDS(ON) (m)

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics

40
35
VGS=-10V

30
25
20

ID=-6.6A
1.40

VGS=-10V
VGS=-4.5V

1.20

1.00

15
0.80

10
0

10

15

20

25

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01

70
65

1.0E+00

ID=-6.6A

55

1.0E-01

50

1.0E-02

125C
125C

45

-IS (A)

RDS(ON) (m)

60

1.0E-03

40
35

1.0E-04

30

25C

25C

1.0E-05

25
1.0E-06

20
3

6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

1500

10
VDS=-15V
ID=-6.6A

1250
Ciss
Capacitance (pF)

-VGS (Volts)

8
6

4
2

1000
750
500
Coss

0
0

12

16

20

-Qg (nC)
Figure 7: Gate-Charge Characteristics

20

25

30

30
Power (W)

0.1s

1ms
10ms

1s

20

10
10s

DC
0
0.001

0.1
0.1

15

TJ(Max)=150C
TA=25C

10s
100s

RDS(ON)
limited

1.0

10

40

TJ(Max)=150C, TA=25C

10.0

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

-ID (Amps)

Crss

250

10

100

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD
0.1
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000