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SN65HVD251
www.ti.com
DRJ
FEATURES
DESCRIPTION
(1)
APPLICATIONS
RS
VCC
CANH
CANL
Vref
VCC
1
D
RS 8
R
5 V
ref
7
CANH
6 CANL
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PART NUMBER
PACKAGE
TEMPERATURE RANGE
SN65HVD251D
-40C to 125C
VP251
SN65HVD251P
-40C to 125C
65HVD251
SN55HVD251DRJ
-55C to 125C
SN55HVD251
MARKED AS
(2)
Values
Supply voltage range, VCC
-0.3 V to 7 V
-36 V to 36 V
CANH, CANL
200 V
10 mA to 10 mA
Human Body Model
Electrostatic discharge
(3)
Charged-Device Model
Electrical fast transient/burst
(4)
14 kV
All pins
6 kV
All pins
1 kV
CANH, CANL
3 kV
(see the Package
Dissipation Ratings Table)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
Tested in accordance with JEDEC Standard 22, Test Method A114-A.
Tested in accordance with JEDEC Standard 22, Test Method C101.
SON (DRJ)
(1)
(2)
(3)
DERATING FACTOR
ABOVE TA = 25C
(1)
CIRCUIT BOARD
MODEL
TA = 25C
POWER RATING
TA = 85C POWER
RATING
TA = 125C POWER
RATING
Low-K (2)
576 mW
4.8 mW/C
288 mW
96 mW
High-K (3)
924 mW
7.7 mW/C
462 mW
154 mW
Low-K (2)
888 mW
7.4 mW/C
444 mW
148 mW
High-K (3)
1212 mW
10.1 mW/C
606 mW
202 mW
Low-K (2)
403 mW
4.03 mW/C
262 mW
100 mW
High-K
(no Vias) (3)
1081 mW
10.8 mW/C
703 mW
270 mW
High-K
(with Vias)
2793 mW
27.9 mW/C
1815 mW
698 mW
This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
In accordance with the Low-K thermal metric definitions of EIA/JESD51-3.
In accordance with the High-K thermal metric definitions of EIA/JESD51-7.
SN55HVD251
SN65HVD251
www.ti.com
THERMAL CHARACTERISTICS
PARAMETER
qJB
TEST CONDITIONS
MIN
TYP
78.7
48.9
DRJ
qJC
TSD
UNITS
C/W
73
44.6
66.6
DRJ
PD
MAX
C/W
52
97.7
mW
142
mW
165
MIN
NOM
D input
D input
(1)
12
-7
V
0.3 VCC
-6
VCC
0.75 VCC
VCC
100
-50
Receiver
mA
-4
Driver
50
Receiver
mA
SN65HVD251
-40
125
SN55HVD251
55
125
Junction temperature, TJ
(1)
UNIT
5.5
0.7 VCC
MAX
4.5
145
The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
SUPPLY CURRENT
over operating free-air temperature range (unless otherwise noted)
PARAMETER
ICC
(1)
Supply current
TEST CONDITIONS
MIN
TYP (1)
MAX UNIT
Standby
Rs at VCC, D at VCC
Dominant
D at 0 V, 60 load, Rs at 0 V
275
65
Recessive
D at VCC, no load, Rs at 0 V
14
A
mA
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
VOD(D)
TEST CONDITIONS
CANH
CANH
CANL
CANL
MIN
TYP (1)
2.75
MAX UNIT
3.5
4.5
0.5
2.5
3
3
2.5
Figure 1 , D at 0 V, Rs at 0 V
1.5
1.2
3.1
1.2
3.1
V
mV
-120
12
-0.5
0.05
VOD(R)
VOC(pp)
Figure 9, Rs at 0 V
IIH
D at 0.7 VCC
-40
IIL
D at 0.3 VCC
-60
600
CO
Output capacitance
IOZ
IIRs(s)
Rs at 0.75 VCC
IIRs(f)
Rs at 0 V
2.5
-2
(1)
mV
-200
IOS(SS)
mA
200
-10
-550
TEST CONDITIONS
TYP
MAX
Figure 4, Rs at 0 V
MIN
40
70
90
125
500
800
85
125
Figure 4, Rs at 0 V
tpHL
200
260
1150
1450
Figure 4, Rs at 0 V
tsk(p)
tr
tf
tr
tf
tr
tf
ten
45
85
110
180
650
900
35
80
100
35
80
100
100
150
250
100
150
250
600
950
1550
600
950
1550
Figure 4, Rs at 0 V
Figure 4, Rs with 10 k to ground
Figure 4, Rs with 100 k to ground
Figure 8
0.5
UNIT
ns
SN55HVD251
SN65HVD251
www.ti.com
TEST CONDITIONS
VIT+
VIT-
Vhys
VOH
Figure 6, IO = -4mA
VOL
Figure 6, IO = 4mA
MIN
TYP
MAX UNIT
750
Rs at 0 V, (See Table 1)
500
900
650
mV
100
0.8 VCC
V
0.2 VCC
CANH or CANL at 12 V
II
CANH or CANL at 12 V,
VCC at 0 V
CANH or CANL at -7 V
CANH or CANL at -7 V,
VCC at 0 V
600
Other bus
pin at 0 V,
Rs at 0 V, D
at 0.7 VCC
715
A
-460
-340
CI
20
pF
CID
10
RID
D at 0.7 VCC, Rs at 0 V
40
100
RIN
D at 0.7 VCC, Rs at 0 V
20
50
See Figure 13
pF
TEST CONDITIONS
MIN
TYP
MAX
tpLH
35
50
tpHL
35
50
tsk(p)
tr
tf
tp(sb)
Figure 6
20
2
2
Figure 12, Rs at VCC
UNIT
ns
4
500
VREF-PIN CHARACTERISTICS
over recommended operating conditions (unless otherwise noted).
PARAMETER
VO
TEST CONDITIONS
-5 A < IO < 5 A
MIN
TYP
MAX
0.45 VCC
0.55 VCC
0.4 VCC
0.6 VCC
UNIT
V
TEST CONDITIONS
MIN
Figure 10, Rs at 0 V
tloop1
tloop2
tloop2
TYP
MAX
60
100
100
150
440
800
Figure 10, Rs at 0 V
115
150
235
290
1070
1450
105
145
UNIT
ns
ns
ns
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
VO(CANH)
D
VOD
II
IIRs
Rs
VI
60 W + 1%
VO(CANH) + VO(CANL)
2
VOC
IO(CANL)
VI(Rs)
_
VO(CANL)
Recessive
93.5 V
VO(CANH)
92.5 V
91.5 V
VO(CANL)
CANH
VOD
VI
RNODE
60 W 1%
+
_
RS
CANL
7 V VTEST 12 V
RNODE
SN55HVD251
SN65HVD251
www.ti.com
CANH
D
VI
RL =
60 W 1%
+
VI(Rs)
_
Rs
(see Note A)
CL =
50 pF 20%
(see Note B)
VO
CANL
VCC
VCC/2
VI
VCC/2
0V
tPHL
tPLH
0.9V
VO
90%
10%
tr
VO(D)
0.5V
VO(R)
tf
VI(CANH)
VI(CANH) + VI(CANL)
VIC =
2
VI(CANL)
IO
VID
VO
CANL
CANL
(see Note A)
1.5 V
IO
CL = 15 pF
+20% (see Note B)
VO
3.5 V
VI
2.4 V
2V
1.5 V
tPLH
VO
tPHL
0.7 VCC
10%
90%
tr
VOH
0.3 VCC
10%
VOL
tf
A.
The input pulse is supplied by a generator having the following characteristics: PRR 125 kHz, 50% duty cycle, tr
6ns, tf 6ns, ZO = 50.
B.
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
CANH
R
CANL
100 W
Pulse Generator
15 ms Duration
1% Duty Cycle
tr, tr 3 100 ns
D at 0 V
or VCC
RS at 0 V or VCC
A.
This test is conducted to test survivability only. Data stability at the R output is not specified.
DIFFERENTIAL INPUT
OUTPUT
VCANH
VCANL
|VID|
12 V
11.1 V
900 mV
-6.1 V
-7 V
900 mV
-1 V
-7 V
6V
12 V
6V
6V
-6.5 V
-7 V
500 mV
12 V
11.5 V
500 mV
-7 V
-1 V
6V
6V
12 V
6V
open
open
VOL
VOH
DUT
CANH
0V
VI
D
60 W 1%
Rs
CANL
R
+
VO
_
15 pF 20%
VCC
0.7 VCC
VI
0V
VOH
0.3 VCC
VO
ten
0.3 VCC
VOL
SN55HVD251
SN65HVD251
www.ti.com
CANH
27 W 1%
D
VI
CANL
27 W 1%
RS
50 pF 20%
VOC
VOC(PP)
VOC
A.
The input pulse is supplied by a generator having the following characteristics: PRR 125 kHz, 50% duty cycle, tr
6ns, tf 6ns, ZO = 50.
60 W + 1%
10 kW or 100 kW + 5%
_
RS
CANL
VRs +
R
+
VO
_
15 pF + 20%
VCC
50%
D Input
0V
tLoop2
tLoop1
VOH
0.7 Vcc
R Output
0.3 Vcc
VOL
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
IOS
0 V or VCC
CANH
CANL
Rs
Vin 7 V or 12 V
JIOS(SS)J
JIOS(P)J
15 s
0V
12 V
Vin
0V
10 ms
or
0V
Vin
7 V
CANL
CL = 15 pF
1.5 V
VO
(see Note B)
3.5 V
2.4 V
VI
1.5 V
tp(sb)
VOH
VO
0.3 VCC
VOL
A.
The input pulse is supplied by a generator having the following characteristics: PRR 125 kHz, 50% duty cycle, tr
6ns, tf 6ns, ZO = 50 .
B.
Figure 12. Receiver Propagation Delay in Standby Test Circuit and Waveform
10
SN55HVD251
SN65HVD251
www.ti.com
DEVICE INFORMATION
5V
R2+1%
R1+1%
CANH
VID
CANL
Vac
R1+1%
VI
R2+1%
VID
R1
R2
500 mV
50 W
450 W
900 mV
50 W
227 W
12 V
VI
7 V
A.
All input pulses are supplied by a generator having the following characteristics: fIN < 1.5 MHz, TA = 25C, VCC = 5 V.
B.
The receiver output should not change state during application of the common-mode input waveform.
FUNCTION TABLES
Table 2. DRIVER
INPUTS
D
OUTPUTS
CANH
BUS STATE
CANL
Dominant
Recessive
Open
Recessive
Recessive
Open
Recessive
Table 3. RECEIVER
(1)
OUTPUT R (1)
VID 0.9 V
VID 0.5 V
Open
11
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
D Input
R Output
Vcc
Vcc
100 kW
1 kW
15 W
Input
Output
9V
9V
CANL Input
CANH Input
Vcc
110 kW
Vcc
110 kW
9 kW
45 kW
9 kW
45 kW
Input
Input
40 V
9 kW
40 V
9 kW
Rs Input
Vcc
Vcc
Output
40 V
+
Input
12
SN55HVD251
SN65HVD251
www.ti.com
TYPICAL CHARACTERISTICS
RECESSIVE-TO-DOMINANT LOOP DELAY
vs
FREE-AIR TEMPERATURE
150
33
72
VCC = 4.5 V
VCC = 5 V
70
68
66
VCC = 5.5 V
VCC = 5.5 V
VCC = 5 V
140
135
130
VCC = 4.5 V
64
125
62
40 25 10 5
120
40 25 10 5
20 35 50 65 80 95 110 125
TA Free-Air Temperature C
31
30
29
28
27
26
25
0
35 50 65 80 95 110 125
Figure 15.
Figure 16.
Figure 17.
DOMINANT DIFFERENTIAL
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
4.5
VOD - Driver Differential Output Voltage - V
5
VOD - Driver Output Voltage - V
VCC = 5 V,
TA = 25C,
RS = 0 V,
RL = 60 ,
CL = 50 pF
32
TA Free-Air Temperature C
4.5
4
CANH
3.5
VCC = 5 V,
TA = 25C,
RS = 0 V,
D at 0V
3
2.5
2
1.5
CANL
1
0.5
0
20
10
20
30
40
50
60
70
VCC = 5 V,
TA = 25C,
RS = 0 V,
D at 0V
4
3.5
3
2.5
2
1.5
1
0.5
0
80
145
RS = 0 V
RS = 0 V
74
10
20
30
40
50
60
70
80
3
VCC = 5.5 V
2.5
2
VCC = 4.5 V
VCC = 5 V
1.5
1
RS = 0 V,
D at 0V,
RL = 60
0.5
0
55
40
25
70
85
125
TA Free-Air Temperature C
Figure 18.
Figure 19.
Figure 20.
50
40
30
20
10
0
TA = 25C
900
800
VCC = 5.5 V
VCC = 5 V
700
600
VCC = 4.5 V
500
400
300
200
TA = 25C,
RS = 0 V,
D at 0V,
RL = 60
1000
60
10 20 30 40 50 60 70 80 90 100
RS - Slope Resistance - kW
Figure 21.
1
1.50
VCC = 5 V
2
VCC = 4.5 V
2.50
3
VCC = 5.5 V
100
0
0.50
Figure 22.
50
50
100
150
TA Free-Air Temperature C
Figure 23.
13
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
APPLICATION INFORMATION
The basics of bus arbitration require that the receiver
at the sending node designate the first bit as
dominant or recessive after the initial wave of the first
bit of a message travels to the most remote node on
a network and back again. Typically, this sample is
made at 75% of the bit width, and within this
limitation, the maximum allowable signal distortion in
a CAN network is determined by network electrical
parameters.
Factors to be considered in network design include
the 5 ns/m propagation delay of typical twisted-pair
bus cable; signal amplitude loss due to the loss
mechanisms of the cable; and the number, length,
and spacing of drop-lines (stubs) on a network. Under
strict analysis, variations among the different
30
1000
100
500
250
250
500
125
1000
62.5
The ISO 11898 standard specifies a maximum bus length of 40 m and maximum stub length of 0.3 m with a
maximum of 30 nodes. However, with careful design, users can have longer cables, longer stub lengths, and
many more nodes on a bus. (Note: Non-standard application may come with a trade-off in signaling rate.) A bus
with a large number of nodes requires a transceiver with high input impedance such as the HVD251.
The Standard specifies the interconnect to be a single twisted-pair cable (shielded or unshielded) with 120-
characteristic impedance (Zo). Resistors equal to the characteristic impedance of the line terminate both ends of
the cable to prevent signal reflections. Unterminated drop-lines connect nodes to the bus and should be kept as
short as possible to minimize signal reflections.
Connectors, while not specified by the ISO 11898 standard, should have as little effect as possible on standard
operating parameters such as capacitive loading. Although unshielded cable is used in many applications, data
transmission circuits employing CAN transceivers are usually used in applications requiring a rugged
interconnection with a wide common-mode voltage range. Therefore, shielded cable is recommended in these
electronically harsh environments, and when coupled with the 2-V to 7-V common-mode range of tolerable
ground noise specified in the standard, helps to ensure data integrity. The HVD251 extends data integrity beyond
that of the standard with an extended 7-V to 12-V range of common-mode operation.
NOISE MARGIN
900 mV Threshold
RECEIVER DETECTION WINDOW
ALLOWABLE JITTER
SN55HVD251
SN65HVD251
www.ti.com
An eye pattern is a useful tool for measuring overall signal quality. As displayed in Figure 24, the differential
signal changes logic states in two places on the display, producing an eye. Instead of viewing only one logic
crossing on the scope, an entire bit of data is brought into view. The resulting eye pattern includes all effects of
systemic and random distortion, and displays the time during which a signal may be considered valid.
The height of the eye above or below the receiver threshold voltage level at the sampling point is the noise
margin of the system. Jitter is typically measured at the differential voltage zero-crossing during the logic state
transition of a signal. Note that jitter present at the receiver threshold voltage level is considered by some to be a
more effective representation of the jitter at the input of a receiver.
As the sum of skew and noise increases, the eye closes and data is corrupted. Closing the width decreases the
time available for accurate sampling, and lowering the height enters the 900 mV or 500 mV threshold of a
receiver.
Different sources induce noise onto a signal. The more obvious noise sources are the components of a
transmission circuit themselves; the signal transmitter, traces & cables, connectors, and the receiver. Beyond
that, there is a termination dependency, cross-talk from clock traces and other proximity effects, VCC and ground
bounce, and electromagnetic interference from near-by electrical equipment.
The balanced receiver inputs of the HVD251 mitigate most sources of signal corruption, and when used with a
quality shielded twisted-pair cable, help meet data integrity.
Typical Application
Bus Lines 40 m max
CANH
120
120
VCC
5V
0.1 F
SN65HVD251
Vref
RS
VCC
CANTX
0.1 F
SN65HVD251
GND
D
5V
Vref
RS
VCC
CANRX
CANTX
CANRX
0.1 F
SN65HVD230
GND
3.3 V
GND
D
CANTX
CANRX
TMS320F243
TMS320F243
TMS320LF2407A
Sensor, Actuator, or
Control Equipment
Sensor, Actuator, or
Control Equipment
Sensor, Actuator, or
Control Equipment
15
SN55HVD251
SN65HVD251
SLLS545E NOVEMBER 2002 REVISED MARCH 2010
www.ti.com
REVISION HISTORY
Changes from Original (November 2002) to Revision A
Page
Page
Changed DESCRIPTION text From: and tolerance to transients of 50 V To: and tolerance to transients of 200 V ........ 1
Page
Added the SN65HVD251P Package option to the Ordering Information table. ................................................................... 2
Changed the ABSOLUTE MAXIMUM POWER DISSIPATION RATINGS table values ....................................................... 2
Changed Junction temperature, TJ - SOIC Package MAX value From 150C To: 145C ................................................... 3
Page
Changed the data sheet title From: CAN TRANSCEIVER To: INDUSTRIAL CAN TRANSCEIVER ................................... 1
Deleted APPLICATIONS bullets: DeviceNet Data Buses, Smart Distributed Systems (SDS), and ISO 11783
Standard Data Bus Interface ................................................................................................................................................ 1
Deleted last paragraph from the DESCRIPTION - "The HVD251 may be used..." .............................................................. 1
Added Electrical fast transient/burst to the Abs Max Ratings table ...................................................................................... 2
Changed table title From: ABSOLUTE MAXIMUM POWER DISSIPATION RATINGS To: PACKAGE DISSIPATION
RATINGS .............................................................................................................................................................................. 2
Added the SON (DRJ) option to the PACKAGE DISSIPATION RATINGS table ................................................................. 2
Deleted the condition - over recommended operating conditions (unless otherwise noted). From the
RECOMMENDED OPERATING CONDITIONS table .......................................................................................................... 3
Added SN55HVD251 to the Operating free-air temperature, TA in the ROC table .............................................................. 3
Deleted ICC - Supply current from the DRIVER ELECTRICAL CHARACTERISTICS ........................................................ 4
Added T -40C to VO(D) Test Conditions in the DRIVER ELECTRICAL CHARACTERISTICS ......................................... 4
Added RNODE = 330 to Differential output voltage (Dominant) (second line of Test Conditions) in the DRIVER
ELECTRICAL table ............................................................................................................................................................... 4
Added a third line of Test Conditions to Differential output voltage (Dominant) in the DRIVER ELECTRICAL table .......... 4
Added T 85C to VOD(R) Test Conditions in the DRIVER ELECTRICAL CHARACTERISTICS ......................................... 4
Added TYP values to the Differential output signal rise and fall times in the DRIVER SWITCHING
CHARACTERISTIC table ...................................................................................................................................................... 4
Deleted ICC - Supply current from the RECEIVER ELECTRICAL CHARACTERISTICS .................................................... 5
Added Receiver noise rejection row to the RECEIVER ELECTRICAL CHARACTERISTIC table ....................................... 5
16
SN55HVD251
SN65HVD251
www.ti.com
Changed Figure 15 title From: tLOOP1-LOOP TIME To: RECESSIVE-TO-DOMINANT LOOP DELAY .................................. 13
Changed Figure 16 title From: tLOOP2-LOOP TIME To: DOMINANT-TO-RECESSIVE LOOP DELAY .................................. 13
Changed Figure 18 From: DRIVER LOW-LEVEL OUTPUT CURRENT vs LOW-LEVEL OUTPUT VOLTAGE To:
DRIVER OUTPUT VOLTAGE vs OUTPUT CURRENT ..................................................................................................... 13
Changed Figure 19 From: DRIVER HIGH-LEVEL OUTPUT CURRENT vs HIGH-LEVEL OUTPUT VOLTAGE To:
DRIVER DRIFFERENTIAL OUTPUT VOLTAGE vs OUTPUT CURRENT ........................................................................ 13
Changed Figure 22 title From: DIFFERENTIAL OUTPUT FALL TIME To: DIFFERENTIAL OUTPUT TRANSITION
TIME ................................................................................................................................................................................... 13
Page
Deleted device number SN65HVD251DR, added the Temperature Range to the ORDERING INFORMATION table ....... 2
17
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
Op Temp (C)
Top-Side Markings
(3)
(4)
SN55HVD251DRJR
ACTIVE
SON
DRJ
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
SN55
HVD251
SN65HVD251D
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VP251
SN65HVD251DG4
ACTIVE
SOIC
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VP251
SN65HVD251DR
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VP251
SN65HVD251DRG4
ACTIVE
SOIC
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
VP251
SN65HVD251P
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
-40 to 125
65HVD251
SN65HVD251PE4
ACTIVE
PDIP
50
Pb-Free
(RoHS)
CU NIPDAU
-40 to 125
65HVD251
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Addendum-Page 1
Samples
www.ti.com
11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF SN65HVD251 :
Automotive: SN65HVD251-Q1
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
18-Aug-2014
Device
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
SN55HVD251DRJR
SON
DRJ
1000
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
SN65HVD251DR
SOIC
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
18-Aug-2014
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
SN55HVD251DRJR
SON
DRJ
1000
210.0
185.0
35.0
SN65HVD251DR
SOIC
2500
340.5
338.1
20.6
Pack Materials-Page 2
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