BSM 150 GT 120 DN2

IGBT Power Module

Solderable Power module

3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type

VCE

BSM 150 GT 120 DN2

1200V 200A

IC

Package

Ordering Code

TRIPACK

C67070-A2518-A67

Maximum Ratings
Parameter

Symbol

Collector-emitter voltage

VCE

Collector-gate voltage

VCGR

RGE = 20 k

Values

Unit

1200

1200

Gate-emitter voltage

VGE

DC collector current

IC

20
A

TC = 25 C

200

TC = 80 C

150

Pulsed collector current, tp = 1 ms

ICpuls

TC = 25 C

400

TC = 80 C

300

Power dissipation per IGBT

Ptot

TC = 25 C

1250

Chip temperature

Tj

Storage temperature

Tstg

Thermal resistance, chip case

RthJC

0.12

Diode thermal resistance, chip case

RthJCD

0.28

Insulation test voltage, t = 1min.

Vis

2500

Vac

Creepage distance

16

mm

Clearance

11

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

+ 150

-40 ... + 125

K/W

sec

40 / 125 / 56

Nov-24-1997

BSM 150 GT 120 DN2

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics
Gate threshold voltage

VGE(th)

VGE = VCE, IC = 6 mA

4.5

5.5

6.5

VGE = 15 V, IC = 150 A, Tj = 25 C

2.5

VGE = 15 V, IC = 150 A, Tj = 125 C

3.1

3.7

Collector-emitter saturation voltage

Zero gate voltage collector current

VCE(sat)

mA

ICES

VCE = 1200 V, VGE = 0 V, Tj = 25 C

2.8

VCE = 1200 V, VGE = 0 V, Tj = 125 C

Gate-emitter leakage current

nA

IGES

VGE = 20 V, VCE = 0 V

320

AC Characteristics
Transconductance
VCE = 20 V, IC = 150 A
Input capacitance

62

nF

10

1.5

0.8

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

Ciss

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

gfs

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

Nov-24-1997

BSM 150 GT 120 DN2

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Switching Characteristics, Inductive Load at Tj = 125 C

Turn-on delay time

ns

td(on)

VCC = 600 V, VGE = 15 V, IC = 150 A

RGon = 5.6
Rise time

200

400

100

200

600

900

70

100

tr

VCC = 600 V, VGE = 15 V, IC = 150 A

RGon = 5.6
Turn-off delay time

td(off)

VCC = 600 V, VGE = -15 V, IC = 150 A

RGoff = 5.6
Fall time

tf

VCC = 600 V, VGE = -15 V, IC = 150 A

RGoff = 5.6
Free-Wheel Diode
Diode forward voltage

VF

IF = 150 A, VGE = 0 V, Tj = 25 C

2.3

2.8

IF = 150 A, VGE = 0 V, Tj = 125 C

1.8

Reverse recovery time

trr

IF = 150 A, VR = -600 V, VGE = 0 V

diF/dt = -1500 A/s, Tj = 125 C
Reverse recovery charge

0.4

Qrr

IF = 150 A, VR = -600 V, VGE = 0 V

diF/dt = -1500 A/s
Tj = 25 C

Tj = 125 C

22

Nov-24-1997

BSM 150 GT 120 DN2

Power dissipation
Ptot = (TC)
parameter: Tj 150 C

Safe operating area

IC = (VCE)
parameter: D = 0, TC = 25C , Tj 150 C
10 3

1300
W

t = 18.0s
p

1100
Ptot

IC

1000
900

10 2

100 s

800
700
600
500

1 ms

10 1

400
300

10 ms

200
100
0
0

20

40

60

80

100

120

10 0
0
10

160

10

10

DC 3
10

TC

Collector current
IC = (TC)
parameter: VGE 15 V , Tj 150 C

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T

IGBT

10 0

220
A
IC

VCE

K/W

180

ZthJC

160

10 -1

140
120

10 -2

D = 0.50

100

0.20

80

0.10

60

0.05

10 -3

0.02

40
20
0
0

0.01

single pulse

20

40

60

80

100

120

160

TC

10 -4
-5
10

10

-4

10

-3

10

-2

10

-1

s 10

tp

Nov-24-1997

BSM 150 GT 120 DN2

Typ. output characteristics

Typ. output characteristics

IC = f (VCE)

IC = f (VCE)

parameter: tp = 80 s, Tj = 25 C

parameter: tp = 80 s, Tj = 125 C

300

300

260
IC

240
220
200

260

17V
15V
13V
11V
9V
7V

IC

240
220
200

180

180

160

160

140

140

120

120

100

100

80

80

60

60

40

40

20
0

20
0

VCE

17V
15V
13V
11V
9V
7V

5
VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
300
A
260
IC

240
220
200
180
160
140
120
100
80
60
40
20
0
0

10

V
14
VGE

Nov-24-1997

BSM 150 GT 120 DN2

Typ. gate charge

VGE = (QGate)
parameter: IC puls = 150 A

Typ. capacitances

C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2

20
V

nF
VGE

16

14

600 V

800 V

10 1

Ciss

12
10
8

Coss

10 0
6

Crss

4
2
0
0

200

400

600

800

10 -1
0

1100

10

15

20

25

30

V
VCE

QGate

40

Reverse biased safe operating area

Short circuit safe operating area

ICpuls = f(VCE) , Tj = 150C

parameter: VGE = 15 V

ICsc = f(VCE) , Tj = 150C

parameter: VGE = 15 V, tSC 10 s, L < 50 nH

2.5

12

ICpuls/IC

ICsc/IC
8
1.5
6
1.0
4
0.5

0.0
0

200

400

600

800

1000 1200

V
1600
VCE

0
0

200

400

600

800

1000 1200

V 1600
VCE

Nov-24-1997

BSM 150 GT 120 DN2

Typ. switching time

Typ. switching time

I = f (IC) , inductive load , Tj = 125C

t = f (RG) , inductive load , Tj = 125C

par.: VCE = 600 V, VGE = 15 V, RG = 5.6

par.: VCE = 600 V, VGE = 15 V, IC = 150 A

10 4

10 4

ns

ns

t
10 3

tdoff
10 3

tdoff
tdon
tr

tdon
tr
10 2

10 2
tf

tf

10 1
0

50

100

150

200

250

300

A
IC

10 1
0

400

10

20

30

40

60
RG

Typ. switching losses

Typ. switching losses

E = f (IC) , inductive load , Tj = 125C

E = f (RG) , inductive load , Tj = 125C

par.: VCE = 600 V, VGE = 15 V, RG = 5.6

par.: VCE = 600V, VGE = 15 V, IC = 150 A

120

120

mWs

mWs

Eon

80

80

60

60

40

Eon

40
Eoff

Eoff

20

0
0

20

50

100

150

200

250

300

A
IC

400

0
0

10

20

30

40

60
RG

Nov-24-1997

BSM 150 GT 120 DN2

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T

Forward characteristics of fast recovery

reverse diode IF = f(VF)
parameter: Tj

10 0

300
A

K/W

260
IF

Diode

240

ZthJC

220

10 -1

200
180
Tj=125C

160

Tj=25C

10 -2

140

D = 0.50

120

0.20
0.10

100

60

0.02
single pulse

40
20
0
0.0

0.05

10 -3

80

0.5

1.0

1.5

2.0

3.0

10 -4
-5
10

10

-4

0.01

10

-3

10

-2

10

-1

s 10

tp

VF

Nov-24-1997

BSM 150 GT 120 DN2

Circuit Diagram

Package Outlines
Dimensions in mm
Weight: 300 g

Nov-24-1997

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Terms & Conditions of usage

The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical
departments will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is
granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the
product and its characteristics.
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application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For
those that are specifically interested we may provide application notes.
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contact the sales office, which is responsible for you.
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any such applications we urgently recommend
- to perform joint Risk and Quality Assessments;
- the conclusion of Quality Agreements;
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and that we may make delivery depended on the realization
of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
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