IRFP460

Data Sheet

July 1999

20A, 500V, 0.270 Ohm, N-Channel

Power MOSFET

Ordering Information
PART NUMBER
IRFP460

20A, 500V
rDS(ON) = 0.270
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards

Symbol

PACKAGE
TO-247

2291.3

Features

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17465.

File Number

BRAND

IRFP460

NOTE: When ordering, use the entire part number.

Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE

DRAIN
(TAB)

4-359

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRFP460
Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFP460
500
500
20
12
80
20
250
2.0
960
-55 to 150

UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to TJ = 125oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

500

Drain to Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V (Figure 10)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

VDS = Rated BVDSS , VGS = 0V

25

250

20

Zero Gate Voltage Drain Current

IDSS

VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC

On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time

ID(ON)

VGS = 20V

100

nA

rDS(ON)

ID = 11A, VGS = 10V (Figures 8, 9)

0.24

0.27

gfs
td(ON)

VDS 50V, IDS > 11A (Figure 12)

13

19

23

35

ns

81

120

ns

85

130

ns

IGSS

tr

Turn-Off Delay Time

VDS > ID(ON) x rDS(ON)MAX , VGS = 10V

VDD = 250V, ID = 21A, RGS = 4.3, RD = 12,

VGS = 10V MOSFET Switching Times are Essentially
Independent of Operating Temperature

td(OFF)

Fall Time

tf

Total Gate Charge

(Gate to Source + Gate-Drain)
Gate to Source Charge

Qg(TOT)
Qgs

VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figure 14). Gate Charge is
Essentially Independent of OperatingTemperature

65

98

ns

120

190

nC

18

nC

62

nC

4100

pF

Gate to Drain Miller Charge

Qgd

Input Capacitance

CISS

Output Capacitance

COSS

480

pF

Reverse Transfer Capacitance

CRSS

84

pF

5.0

nH

13

nH

0.50

oC/W

30

oC/W

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)

Internal Drain Inductance

LD

Measured from the Drain

Lead, 6mm (0.25in) from
Package to Center of Die

Internal Source Inductance

LS

Measured from the Source

Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
LD
G
LS
S

Thermal Resistance Junction to Case

RJC

Thermal Resistance Junction to Ambient

RJA

4-360

Free Air Operation

IRFP460
Source to Drain Diode Specifications
PARAMETER

SYMBOL

Continuous Source to Drain Current

ISD

Pulse Source to Drain Current

(Note 3)

ISDM

TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier

MIN

TYP

MAX

UNITS

20

80

1.8

280

580

1200

ns

3.8

8.1

18

Source to Drain Diode Voltage (Note 2)

VSD

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13)

TJ = 25oC, ISD = 21A, dISD/dt = 100A/s
TJ = 25oC, ISD = 21A, dISD/dt = 100A/s

NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25, Peak IAS = 20A.

Typical Performance Curves

Unless Otherwise Specified

20

ID, DRAIN CURRENT (A)

1.0

0.8
0.6
0.4
0.2
0

16

12

0
0

50

100

150

TC , CASE TEMPERATURE (oC)

25

50

75

100

125

150

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

1
ZJC, THERMAL IMPEDANCE (oC/W)

POWER DISSIPATION MULTIPLIER

1.2

0.5
0.1

0.2
0.1
0.05

PDM

0.02
10-2
0.01

10-3
10-5

t1
t2

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
10-4

0.1
10-3
10-2
t1, RECTANGULAR PULSE DURATION (S)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-361

10

IRFP460
Typical Performance Curves

40

32

102
5

10s
100s

2
10

1ms

10ms

2
1
5 T = 25oC
C
TJ = MAX RATED
2
SINGLE PULSE
0.1
1
2
5
10

VGS = 5.5V
24

16

VGS = 5.0V

VGS = 4.5V

DC

VGS = 4.0V
2

102

103

50

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

ID, DRAIN CURRENT(A)

ID , DRAIN CURRENT (A)

VGS = 5.5V
24

16

VGS = 5.0V

VGS = 4.5V
VGS = 4.0V
16

12

10
TJ = 150oC
1
TJ = 25oC
0.1

10-2

0
20

2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

3.0

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

2.0
VGS = 10V

1.5

1.0

0.5

VGS = 20V

2.4

20

40
60
ID, DRAIN CURRENT (A)

80

100

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-362

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 11A

1.8

1.2

0.6

0
0

10

FIGURE 7. TRANSFER CHARACTERISTICS

NORMALIZED DRAIN TO SOURCE

ON RESISTANCE

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE ()

2.5

250

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS 50V

VGS = 6.0V

VGS = 10V

200

102

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

150

FIGURE 5. OUTPUT CHARACTERISTICS

40

100

VDS , DRAIN TO SOURCE VOLTAGE (V)

VDS , DRAIN TO SOURCE VOLTAGE (V)

32

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX

VGS = 10V
VGS = 6.0V

OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
ID, DRAIN CURRENT (A)

ID , DRAIN CURRENT (A)

103
5

Unless Otherwise Specified (Continued)

-40

40

80

120

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

160

IRFP460
Typical Performance Curves

Unless Otherwise Specified (Continued)

1.25

10000

1.15

1.05

0.95

CISS
6000
COSS
4000

0.85

0.75

80

40

120

160

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

TJ = 25oC
24

16
TJ = 150oC
8

5
10
2
5
VDS , DRAIN TO SOURCE VOLTAGE (V)

16
24
ID , DRAIN CURRENT (A)

2
10

32

20

TJ = 150oC

TJ = 25oC

2
1
5
2

40

0.4

0.8

ID = 21A
VDS = 400V
VDS = 250V
VDS = 100V

12

1.6

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

16

1.2

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

40

80

120

160

200

Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-363

102

PULSE DURATION = 80s

5 DUTY CYCLE = 0.5% MAX

0.1
0

102
ISD, SOURCE TO DRAIN CURRENT (A)

32

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

PULSE DURATION = 80s

DUTY CYCLE = 0.5% MAX
VDS 50V

VGS, GATE TO SOURCE (V)

gfs, TRANSCONDUCTANCE (S)

40

CRSS

2000

-40

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD

8000

C, CAPACITANCE (pF)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

ID = 250A

2.0

IRFP460
Test Circuits and Waveforms
VDS
BVDSS
L

tP

VARY tP TO OBTAIN

RG

REQUIRED PEAK IAS

VGS

VDS

IAS

VDD

VDD

DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

50%
PULSE WIDTH

10%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

50%

VDD
Qg(TOT)

12V
BATTERY

0.2F

SAME TYPE
AS DUT

50k

Qgd
Qgs

0.3F

IG(REF)

VDS
DUT

0
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-364

VGS

IG(REF)
0

FIGURE 20. GATE CHARGE WAVEFORMS

IRFP460

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