Page 1 of 3

S2 : To Determine the Intrinsic Energy Gap of a Given

Semiconductor Specimen

Theory
The resistivity of a semiconductor material depends significantly upon the temperature in
accordance with the equation
Eg
= o exp2kT
(i)

where is the resistivity at absolute temperature T, o is the resistivity at absolute zero, k is the
Boltzmann constant, Eg is the intrinsic energy gap of the semiconductor material. If we are
interested in a small range of temperature (near room temperature), then, over this range, the
dimensions of a semiconductor specimen do not change thermally to a significant extent.
Under this assumption we may substitute resistance R for resistivity in Eq (i). Thus
Eg
R = Ro exp2kT
(ii)

Taking natural logarithm on the both sides of Eq (ii) we get

Eg 1
lnR = lnR0 + 2k T (iii)

Eq (iii) implies that the plot of lnR vs 1/T should be a straight line, whose slope m is given by
E

m = 2kg
or

Eg = 2mk (iv)

If m is determined, the intrinsic energy gap Eg can be calculated from Eq (iv).

Apparatus

Transistorised power supply (0~25V DC)

Variable resistance Rv
VTVM (Vacuum tube voltmeter)
Milliammeter
Semiconductor specimen (Ge)
Thermometer & Water bath

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Experimental Data
Table 1: Resistance at different temperatures (increasing order)
Temperature,
t (oC)
27
30
35
40
50
55
60
65
70

Absolute
temp, T = t
+ 273 (K)
300
303
308
313
323
328
333
338
343

1
(10-3 K-1)
T

Voltage, V
(mV)

Current, I
(mA)

3.33
3.30
3.24
3.19
3.09
3.04
3.00
2.95
2.91

160
145
135
110
100
90
80
70
65

14.5
15
15
15.5
15.5
15.5
16
16
16

Resistance,
V
R = ()
I
11.03
9.66
9
7.1
6.45
5.8
5
4.4
4.06

lnR
2.4
2.2
2.19
1.95
1.86
1.75
1.61
1.47
1.40

Table 2: Resistance at different temperatures (decreasing order)

Temperature,
t (oC)
70
65
60
55
50
45
40
31

Absolute
temp, T = t
+ 273 (K)
343
338
333
328
323
318
313
304

1
(10-3 K-1)
T

Voltage, V
(mV)

Current, I
(mA)

2.91
2.95
3.00
3.04
3.09
3.14
3.19
3.29

60
68
75
85
90
100
110
140

16
16
16
15.5
15.5
15.5
15.5
15

Resistance,
V
R = ()
I
3.75
4.25
4.69
5.48
5.8
6.45
7.1
9.33

lnR
1.32
1.44
1.54
1.7
1.75
1.86
1.96
2.23

Calculations
For Increasing Temperature Readings
From the lnR vs 1/T graph, slope m =

2.1 1
K = 2750 K
(2.5 2.1) 103

Then from Eq (iv), Eg = 22750(1.3810-23) J =

2 2750 (1.38 10-23 )

eV = 0.474 eV
1.6 1019

For Decreasing Temperature Readings

From the lnR vs 1/T graph, slope m =

2 1.7
K = 1363 K
(2.43 2.21) 103

Then from Eq (iv), Eg = 21363(1.3810-23) J =

2 1363 (1.38 10-23 )

eV = 0.235 eV
1.6 1019

Average value of the intrinsic energy gap is [(0.474 +0.235)/2] eV = 0.3546 eV

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Result

Intrinsic Energy Gap of Germanium, Eg = 0.3546 eV

Discussion
The standard value of the intrinsic energy gap of Ge is 0.67 eV. Our experimental result of 0.3546 eV
is not close to it. The deviation from the standard value is [(0.67-0.3546 )/0.67]100% = 47%. Thus the
result we have obtained is not satisfactory.

The upper operational temperature of a Ge diode is about 70oC. This temperature was not
exceeded in our experiment. During the experiment the temperature of the junction was
changing rapidly. We had to control the increasing and decreasing of the temperature by
adjusting the heater so that we could take the readings at the right temperatures. It was too
difficult to keep on track. Moreover the VTVM was not working as it was expected. These
might be the cause of large error in result.
Readings have been taken not only with rising temperature but also with falling temperature.
Then better results are probable since more stable condition prevails. The average of the two
individual results has been taken as the final result.
At low temperatures the resistivity depends to a large degree upon the impurity content, the
effect becoming less prominent at high temperatures where the curve should approach a
straight line giving the energy gap.