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2SK1300

Silicon N Channel MOS FET


REJ03G0919-0200
(Previous: ADE-208-1258)
Rev.2.00
Sep 07, 2005

Application
High speed power switching

Features

Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
G

Rev.2.00 Sep 07, 2005 page 1 of 6

1. Gate
2. Drain
(Flange)
3. Source
S

2SK1300

Absolute Maximum Ratings


(Ta = 25C)
Item
Drain to source voltage

Symbol
VDSS

Ratings
100

Unit
V

VGSS
ID

20
10

V
A

40
10

A
A

Gate to source voltage


Drain current
Drain peak current
Body to drain diode reverse drain current

ID(pulse)
IDR

*1

*2

Channel dissipation
Channel temperature

Pch
Tch

40
150

Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at TC = 25C

Tstg

55 to +150

C
C

Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage

Symbol
V(BR)DSS

Min
100

Typ

Max

Unit
V

Gate to source breakdown voltage


Gate to source leak current

V(BR)GSS
IGSS

20

10

V
A

IG = 100 A, VDS = 0
VGS = 16 V, VDS = 0

Zero gate voltage drain current


Gate to source cutoff voltage

IDSS
VGS(off)

1.0

250
2.0

A
V

VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V

Static drain to source on state


resistance

RDS(on)

0.20
0.25

0.25
0.35

ID = 5 A, VGS = 10 V *
3
ID = 5 A, VGS = 4 V *

Forward transfer admittance


Input capacitance

|yfs|
Ciss

4.5

7.0
525

S
pF

Output capacitance
Reverse transfer capacitance

Coss
Crss

205
60

pF
pF

ID = 5 A, VDS = 10 V *
VDS = 10 V, VGS = 0,
f = 1 MHz

Turn-on delay time


Rise time

td(on)
tr

5
50

ns
ns

Turn-off delay time


Fall time

td(off)
tf

170
75

ns
ns

Body to drain diode forward voltage


Body to drain diode reverse recovery
time

VDF
trr

1.2
220

V
ns

Note:

3. Pulse test

Rev.2.00 Sep 07, 2005 page 2 of 6

Test conditions
ID = 10 mA, VGS = 0

ID = 5 A, VGS = 10 V,
RL = 6

IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 50 A/s

2SK1300

Main Characteristics
Power vs. Temperature Derating

Maximum Safe Operation Area


100

Ta = 25C
10

(1

Sh

ot

)
C
25

150

Operation in this area


is limited by RDS (on)

10

30

100

300

1000

Typical Output Characteristics

Typical Transfer Characteristics


10

Pulse Test
6V

4V

Drain Current ID (A)

16

12

3.5 V
8

3V
4

VGS = 2.5 V

12

VDS = 10 V
Pulse Test

16

TC = 75C

20

25C
25C
2

Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage


vs. Gate to Source Voltage

Static Drain to Source on State


Resistance vs. Drain Current

2.5

Pulse Test
10 A

2.0

1.5
5A

1.0

ID = 2 A

0.5

Gate to Source Voltage VGS (V)

Rev.2.00 Sep 07, 2005 page 3 of 6

10

Static Drain to Source on State Resistance


RDS (on) ()

Drain Current ID (A)

Drain to Source Saturation Voltage


VDS (on) (V)

Drain to Source Voltage VDS (V)

10 V

Case Temperature TC (C)

20

(T C

100

10

0.1
50

0.3

PW

10

20

10

40

tio
ra
pe
O

Drain Current ID (A)

30

C
D

Channel Dissipation Pch (W)

60

Pulse Test
2

1
0.5
VGS = 4 V

10 V

0.2
0.1
0.05
0.5

10

20

Drain Current ID (A)

50

Forward Transfer Admittance


vs. Drain Current
Forward Transfer Admittance yfs (S)

Static Drain to Source on State


Resistance vs. Temperature
0.5

ID = 10 A

Pulse Test

5A
2A

0.4

10 A
5A

0.3

VGS = 4 V

2A

0.2
10 V

0.1

0
40

40

80

120

160

25C
75C

2
1
0.5
0.1

0.2

0.5

10

10,000

Capacitance C (pF)

50
di/dt = 50 A/s
VGS = 0, Ta = 25C
Pulse Test

20
10

1,000
Ciss

Coss

100

Crss

VGS = 0
f = 1 MHz
10
0.2

0.5

10

10

20

30

40

50

Reverse Drain Current IDR (A)

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Switching Characteristics

200

20

160

16

VDD = 25 V
50 V
80 V

120

VGS
12

VDS

40

ID = 10 A

VDD = 80 V
50 V
25 V
8

16

24

32

Gate Charge Qg (nc)

Rev.2.00 Sep 07, 2005 page 4 of 6

0
40

500

Gate to Source Voltage VGS (V)

Reverse Recovery Time trr (ns)


Drain to Source Voltage VDS (V)

Typical Capacitance vs.


Drain to Source Voltage

100

TC = 25C

10

Body to Drain Diode Reverse


Recovery Time

200

80

VDS = 10 V
20 Pulse Test

Drain Current ID (A)

500

5
0.1

50

Case Temperature TC (C)

td(off)

Switching Time t (ns)

Static Drain to Source on State Resistance


RDS (on) ()

2SK1300

200
100
tf
50
tr

20

VGS = 10 V, PW .= 2 s
duty < 1 % VDD =. 30 V

10

td(on)
5
0.2

0.5

Drain Current ID (A)

10

20

2SK1300
Reverse Drain Current vs.
Source to Drain Voltage
20

Reverse Drain Current IDR (A)

Pulse Test
16

12

8
5V
4

VGS = 10 V
0, 5 V

0.4

0.8

1.2

1.6

2.0

Normalized Transient Thermal Impedance s (t)

Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance vs. Pulse Width


3
TC = 25C

D=1

1.0

0.5
0.3

0.2

chc (t) = s (t) chc


chc = 3.13C/W, TC = 25C

0.1

0.1

0.05
0.02

0.03
0.01
10

PDM

1
0.0 Pulse
hot
S
1

100

1m

100 m

10 m

D =PW
T

PW
1

10

Pulse Width PW (S)

Switching Time Test Circuit

Waveforms

Vin Monitor

90 %
Vout Monitor
Vin

D.U.T
RL

Vout
50
Vin = 10 V

Rev.2.00 Sep 07, 2005 page 5 of 6

.
VDD =. 30 V

td (on)

10 %
10 %
90 %
tr

10 %
90 %
td (off)

tf

2SK1300

Package Dimensions
JEITA Package Code

RENESAS Code

Package Name

MASS[Typ.]

SC-46

PRSS0004AC-A

TO-220AB / TO-220ABV

1.8g

Unit: mm

2.79 0.2

11.5 Max
10.16 0.2
9.5

3.6

1.26 0.15

15.0 0.3

18.5 0.5

1.27

6.4

+0.2
0.1

8.0

4.44 0.2
+0.1
0.08

7.8 0.5

0.76 0.1

14.0 0.5

2.7 Max
1.5 Max

0.5 0.1

2.54 0.5

2.54 0.5

Ordering Information
Part Name
2SK1300-E

Quantity
500 pcs

Shipping Container
Box (Sack)

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.2.00 Sep 07, 2005 page 6 of 6

Sales Strategic Planning Div.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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