2N7000

Preferred Device

Small Signal MOSFET

200 mAmps, 60 Volts
NChannel TO92
MAXIMUM RATINGS
Rating

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Symbol

Value

Unit

Drain Source Voltage

VDSS

60

Vdc

DrainGate Voltage (RGS = 1.0 M)

VDGR

60

Vdc

GateSource Voltage
Continuous
Nonrepetitive (tp 50 s)

VGS
VGSM

20

40

Vdc
Vpk

ID
IDM

200
500

PD

350
2.8

mW
mW/C

TJ, Tstg

55 to
+150

Symbol

Max

Unit

RJA

357

C/W

TL

300

Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = 25C
Derate above 25C
Operating and Storage Temperature
Range

200 mAMPS
60 VOLTS
RDS(on) = 5
NChannel
D

mAdc

G
S

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16 from case
for 10 seconds

TO92
CASE 29
Style 22
12

MARKING DIAGRAM
& PIN ASSIGNMENT
2N7000
YWW

1
Source

3
Drain
2
Gate

Y
WW

= Year
= Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.

Semiconductor Components Industries, LLC, 2000

November, 2000 Rev. 5

Publication Order Number:

2N7000/D

2N7000
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Symbol

Min

Max

Unit

V(BR)DSS

60

Vdc

1.0
1.0

Adc
mAdc

IGSSF

10

nAdc

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

3.0

Vdc

Static DrainSource OnResistance

(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)

rDS(on)

5.0
6.0

DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)

VDS(on)

2.5
0.45

OnState Drain Current

(VGS = 4.5 Vdc, VDS = 10 Vdc)

Id(on)

75

mAdc

Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)

gfs

100

mhos

Ciss

60

pF

Coss

25

Crss

5.0

ton

10

toff

10

Characteristic

OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 Adc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125C)

IDSS

GateBody Leakage Current, Forward

(VGSF = 15 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 1.)

Ohm

Vdc

DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

((VDS = 25 V,, VGS = 0,,

f=1
1.0
0 MH
MHz))

SWITCHING CHARACTERISTICS (Note 1.)

TurnOn Delay Time
TurnOff Delay Time

(VDD = 15 V, ID = 500 mA,

RG = 25
, RL = 30
, Vgen = 10 V)

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

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2

ns

2N7000
2.0

1.0
VDS = 10 V

TA = 25C

1.6

VGS = 10 V

1.4

9V

1.2

8V

1.0

7V

0.8

6V

0.6
0.4

5V

0.2

4V
3V

I D, DRAIN CURRENT (AMPS)

I D, DRAIN CURRENT (AMPS)

1.8

1.0

2.0 3.0 4.0 5.0

6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)

9.0

0.8

125C

0.6
0.4
0.2

10

1.0

2.0 3.0 4.0

5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)

2.4
2.2
1.8

VGS = 10 V
ID = 200 mA

1.6
1.4
1.2
1.0
0.8
0.6
0.4
-
60

-
20

+
20
+
60
T, TEMPERATURE (C)

10

+
100

+
140

1.2
1.05

VDS = VGS
ID = 1.0 mA

1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-
60

Figure 3. Temperature versus Static

DrainSource OnResistance

-
20

+
20
+
60
T, TEMPERATURE (C)

+
100

Figure 4. Temperature versus Gate

Threshold Voltage

ORDERING INFORMATION
Device

9.0

Figure 2. Transfer Characteristics

VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)

r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

Figure 1. Ohmic Region

2.0

25C

-
55C

Package

Shipping

2N7000

TO92

1000 Unit/Box

2N7000RLRA

TO92

2000 Tape & Reel

2N7000RLRM

TO92

2000 Ammo Pack

2N7000RLRP

TO92

2000 Ammo Pack

2N7000ZL1

TO92

2000 Ammo Pack

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3

+
140

2N7000
PACKAGE DIMENSIONS
TO92
CASE 2911
ISSUE AL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---

STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN

ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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4

2N7000/D