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P-TTPE GERMANIUM
Q-
N-TYPE GERMANIUM
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edited
by
Milton
F. Allison. (21514-8)
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set
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Photoconductivity
Inductance Calculations, Frederick W. Grover. (60974-X) $2.25
(continued on back flap)
BASIC
THEORY
AND
APPLICATION
OF
TRANSISTORS
Published in Canada by General Publishing Company, Ltd., 30 Lesmill Road, Don Mills, Toronto,
Ontario.
Published in the United Kingdom by Constable
and
W.
Company
Ltd.,
10
Orange
Street,
London
C. 2
New
CONTENTS
Chapter
Section
1.
INTRODUCTION
2.
Paragraphs
Page
1-8
9-15
16-24
25-30
31-35
12
19
30
36
Structure of matter.
Crystals, donors, acceptors, and holes
III. PN junctions
IV. Transistors.
___
I.
II.
36-44
42
4.
I.
Introduction
45,46
47-60
61-67
68-73
52
54
72
80
74,75
76-80
81-84
85-88
89-92
93-98
85
86
90
92
95
98
99-103
104-106
102
108
107,108
109-114
112
113
115
124
128
133
137
139
Chapter
3.
Section
Hybrid parameters
III. Hybrid parameters, CB and CC amplifiers
IV. Open-circuit and short-circuit parameters
II.
Chapter
5.
Section
I.
II.
III.
BIAS STABILIZATION
Introduction
Resistor stabilizing circuits
Chapter
6.
Section
I.
II.
Chapter
7.
Section
I.
II.
__
AUDIO AMPLIFIERS
Introduction..
Preamplifiers
_.
III.
Chapter
8.
TUNED AMPLIFIERS
I.
Coupling networks
145-152
153-156
157-160
144
WIDE-BAND AMPLIFIERS
161-169
159
170-173
174-177
178, 179
180-184
165
170
178
185-189
190-196
197-203
188
199
Section
II.
Chapter
Chapter
9.
10.
Section
I.
II.
III.
11.
Section
I.
II.
III.
Chapter
12.
Section
I.
II.
III.
Chapter 13.
Appendix I.
II.
Glossary
Index
155
OSCILLATORS
Introduction
LC resonant feedback oscillators
RCfeedback
oscillators
Chapter
151
181
Gating circuits
210
204-210
211-214
215-220
221-228
220
228
232
237
245
247
248
252
Figure
1.
/;
">'
wa-,:j-
CHAPTER
INTRODUCTION
Vote.
This manual
is
who has a
and application of
electron tubes.
1.
General
is
a valve which
History of Transistors
2.
a.
Crystal Rectifier
crystal
was
(fig.
and Semiconductors
2).
semiconductor as a
The
made
flexi-
Tuning of the receiver was accomplished by operating the adjusting arm until the
cat-whisker was positioned on a spot of the crystal that resulted in a sound in the headset. Tunthe crystal.
The point
con-
use of a
(detector)
first
rectifier
crystal
was
BINDING
POST
TO
HEADSET
TM690-202
Figure
2.
Radio
P-TYPE
N-TYPE
SEMICONDUCTOR
SEMICONDUCTOR
SEMICONDUCTOR
EXTERNAL
LEAD
EXTERNAL
LEAD
WELDED
TO BASE
METALLIC
POINT CONTACT
WELDED TO
EXTERNAL LEAD
TM690-203
Figure
S.
PN JUNCTION
point contact. The connections to the point contact diode are an external lead welded to the
metallic point contact, and an external lead
welded to the metal base.
The deo. Point Contact Transistor (fig. 4).
velopment of the point contact transistor was
announced in 1948. The physical construction of
the point contact transistor is similar to that of
the point contact diode except that a third lead
with a metallic point contact is placed near the
other metallic point contact on the semiconductor.
One lead is called an emitter lead; the other, a
(ch. 2).
When the two metallic
points are property biased with respect to the
metal base, the point contact transistor is capable
collector lead
(ch. 13).
SEMICONDUCTOR
Figure
5.
TM690-205
power than the point contact diode but the junction diode has a larger shunt capacitance.
e.
Junction Transistor.
The development of
the junction transistor was announced concurrently with the development of the junction diode.
The junction transistor (ch. 2) consists of two
junctions (A and B, fig. 6). Operation of the
PN
Amplification.
The
transistor
EMITTER LEAD
milliamperes at its output. Various circuit arrangements provide for various amounts of signal
amplification.
5. Oscillation.
The
transistor
Figure
4.
may be
used to
convert direct-current energy into alternatingcurrent energy; that is, it may be used as an
oscillator. When functioning in this manner, the
transistor draws energy from a dc source and, in
conjunction with a suitable circuit arrangement,
fig.
7).
Modulation and Demodulation. The transistor used in various circuit arrangements can
provide amplitude modulation (variation in amplitude of an rf signal) (A, fig. 8) or frequency
modulation (variation in frequency of an rf sigc.
TM690-204
be used
COLLECTOR LEAD
may
For
as a current, voltage, or power amplifier.
instance, a stronger signal current may be ob-
N-TYPE
SEMICONDUCTOR
p. TYPE
P-TYPE
SEMICONDUCTOR
SEMICONDUCTOR
/
COLLECTOR
LEAD
w
SIGNAL
A.
AMPLIFIER
AMPLIFIED
CURRENT
SIGNAL
CURRENT
A.
AAz
AC CURRENT
B.
OSCILLATOR
TM690- 207
Figure
P-TYPE
SEMICONDUCTOR
N-TYPE
SEMICONDUCTOR
7.
N-TYPE
SEMICONDUCTOR
TRAN5IST0I
COLLECTOR
LEAD
RF SIGNAL
MODULATED SIGNAL
U
U U
A AMPLITUDE MODULATOR
TRANSISTOR
B.
TM690-206
Figure
6.
Physical construction of
junction transistors.
PNP
and
MODULATED SIGNAL
I]
B.
NPN
II
AUDIO SIGNAL
I]
AMPLITUDE DEMODULATOR
TM690- 208
Figure
8.
am
am demodulator.
Transistor used as
or
modulator
its
application
Transistors
employ
transistors.
RF SIGNAL
||
||
tion (d below)
MODULATED SIGNAL
||
FREQUENCY MODULATOR
A.
though
TRANSISTOR
AUDIO SIGNAL
MODULATED SIGNAL
B.
TM690-209
Figure
9.
or
fm
demodulator.
(telephone or teletypewriter),
power.
as wire systems
up
facsimile, radar, computers, public address systems, intercommunications systems, television and
Electron Tubes
and Voltage Requirements. The
power efficiency is greater than that of
Comparison With
a.
expectancy are not yet available, it has been estimated that they can operate continuously for approximately 8 years, a time much greater than
Fixed Equipments.
b.
tests that
tube.
FREQUENCY DEMODULATOR
Efficiency
transistor
Other advantages
TRANSISTOR
N\j
\JL
SQUARE WAVE
The
-\W-
CLIPPED WAVE
PULSES
B.CLIPPER
TM690-2IO
Figure
10.
A.
6V6-6T
2NI55
B.
t
C.
6J5
2N45
D.
m*\
E.
F.
6AK5W
2N26
TIH690-2N
Figure
11.
tubes.
6. Transistor Material
Summary
8.
little
(par. 15c).
and
a.
is
same
sense
a valve.
The point
d.
in 1948.
e.
glass,
manium
The
/.
as
modulators.
Special Circuit
7.
Components
for Use
With
Transistors
(%
g.
The
sistor's
12)
transistor is smaller
power
efficiency
miniaturization of components.
Capacitors (B,
and trans-
such as capacitors, resistors, batteries, and transformers may be made smaller than the corre-
The lower
fig.
formers (A,
fig.
be miniaturized.
board
10
(not
fig.
12), chokes,
The
shown)
may
all
connecting
cir-
TRANSISTOR
CIRCUIT PARTS
ELECTRON -TUBE
CIRCUIT PARTS
A.
TRANSFORMERS
B.
C.
Figure
12.
CAPACITORS
RESISTORS
and electron
tubes.
11
CHAPTER 2
I.
STRUCTURE OF MATTER
b.
General
9.
of matter
through
20.
have
Scien-
approximately 102
Compound.
ties different
ents
c.
is
called a
Molecule.
est particle of
this process
impossible
can only
we
molecules;
its
into
stone
a
crush
to
crush it into dust. One small particle of dust is
composed of thousands of molecules.
An atom is defined as the smallest
d. Atom.
that can take part in ordielement
an
part of
nary chemical changes. The atoms of a particular element are of the same average mass, but
is
iron,
lic
nonmetallic elements.
12
MOLECULE
=
TWO
H2O
HYDROGEN
ATOMS
Figure
OF
WATER
IS.
Molecule of water.
(par.
176).
When
c.
is
adjusted
14)
can be subdivided into still smaller, or subatomic particles. Paragraph 11 explains the nature of these subatomic particles.
Itself
little
and
Structure of
Figure 14
Atom
The material
It is possible to
is apparent between them.
measure the diameter of any aluminum atom but
because the edges of the atoms are fuzzy, it is
difficult to say just where one atom ends and the
ence
dots are
1 1
fig.
of the
to its subatomic
and B, is hypothetical.
of the figure, except
The portions of matter which they represent are
so small that they are invisible to the eye, even
with the aid of the most powerful microscope.
have been
proximately
electron
By
scientists
number of
difficult
elliptical orbits.
electrons in
because of the
To determine
an atom
way
is
the
exceedingly
electrons
move
in
electron.
13
STRUCTURE
-4
Aluminum
B
_..---\.'!T*.v
MAG
-*
iOOX
OOGOOOfNCrt
MAG IO.OOO.OOOX
OOCIOOOOOUOO:
!NCM
MAG. I00.OO0.00OX
Figure H.
14
Structure of aluminum.
MAG I.OOO.OOO.OOO.OOOX
atom
That is, the
aluminum atom contains an equal number of
positive and negative charges an equal amount
positive charges on the nucleus, the entire
is
found to be
electrically neutral.
electrons.
a.
(1)
struc-
(3)
and Neutrons
(C,
fig.
16)
is
structure.
and
in this
NUCLEUS:
atom the
TM690-I2
Figure
15.
15
NUCLEUS (I3PR0T0NS,I4NEUTR0NS)
FIRST SHELL
SECOND SHELL
THIRD SHELL
\V:~'V/
A.
a ALUMINUM ATOM
HYDROGEN ATOM
NUCLEUS (I5PR0T0NS.I6NEUTR0NS)
FIRST SHELL
SECOND SHELL
SECOND SHELL
THIRD SHELL
THIRD
SHELL
FOURTH SHELL
Xy
C.
[3ZP\
VA
PHOSPHOROUS ATOM
a GERMANIUM
Figure
(4)
IS.
ATOM
Structure of atoms.
atom
o.
Characteristics of
(1) Electrical.
Subatomic
The
Particles.
electrical
charge of the
proton
is
is
composed.
electron in an
neutrons,
it
million,
million,
million
(6.28X10 18 )
electrons.
(2)
is
The diameter
16
Relatively
the same.
speaking, there are great distances between the electrons and the protons of an
approximately
atom even
in solid matter.
estimated that
It has been
if
electrons.
and Unbalance
atom
Electrical Unbalance.
b.
fer
electrically balanced.
is
some of the
When
electrons
It is possible to trans-
to
normally equal
distribution of positive and negative charges in
each substance no longer exists, and because each
contains more of one kind of electricity than of
the other they are said to be electrically charged.
For example, when a glass rod is rubbed with silk,
some of the electrons which are loosely held to
the atoms in the glass are transferred to the silk.
another.
glass rod
charged.
General.
matter
move
a.
are able to
free electrons.
is
The
b.
movement of
If the haphazard
move
generally in the
and
Insulators
(%
17)
known
as insulators.
17
10
INSULATORS
10
100,000,000
o.
z
z
1,000,000
SEMICONDUCTORS
100,000
10,000
1,000
100
10
I
.1
.01
.001
.0001
III
III
CONDUCTORS
.00001
.000001
Si
!
a: ui
(-C9
TM690-2I
Figure
17.
An
known as a
combination of materials, the atomic structure of which is such as to
limit almost to nothing the movement of elecIn other words, cm
trons from atom to atom.
insulator is a material that has few loosely held
b. Insulators.
insulator (also
dielectric) is a material, or
electrons.
No
material
known
all
is
a perfect insu-
are classed as insulators. Glass, dry wood, rubber, mica, and certain plastics such as polystyrene
are insulating materials which have a resistance
of several millions of ohms per centimeter cube.
Section
II.
General.
Most
when
Many
External Characteristics.
Some
patterns,
contain
only
common
60
angles.
(sodium
chloride) form cubes other materials form long
needles, rhomboids, or variations of hexagonal
or rectangular structures. Each material has a
materials, such as
,
manium and
salt
optical,
crystal
Internal Structure.
many
other semiconductors.
AND HOLES
The wavelength of X-rays approximate the distance between the atoms or molecules of crystals.
When X-rays are beamed through a crystal, the
rays are deflected and distributed in accordance
with the specific arrangement of the atoms or
is
photograph, and through a complex mathematical analysis, scientists have been able to construct
models of the internal structure of a given crystal. These analyses have indicated that the atoms
of crystals are arranged in specific patterns that
one atom is not closely related with another atom
;
The
a number
specific ar-
size
and
electrical
The
physical, electrical,
graph
17.
Germanium
17. Pure
a.
General.
atom
Crystal
crystal.
germanium
bound
The nu-
characteristic form.
c.
have carefully controlled amounts of impurities added (par. 18), and each has a resistance of 2 ohms per centimeter cube at room
temperature. This resistance decreases rapidly as
the temperature rises. Note that while only ger-
Germanium and
present.
sistors,
form two
The dashed
lines
cubes.
germanium and
quite different
teristics of
are
The term
crystal
Lattice Structure.
(1)
rotate
constantly
in
relatively
In a
fixed
crystal,
19
contains
manium
outer
is
valence
bonds.
shown diagrammati-
The
electron-pair
When
attraction
and repulsion
crystal
is
is
obtained, the
librium.
(2)
cores
The valence
as
duction occur.
GERMANIUM CORE
20
avoid con-
electrons of
good
LFGEND
18.
To
rr--
Figure
referred to as a lattice.
gestion, figure 18
as
shell.
Pure germanium
(2)
18. Impurities
a.
General.
It
manium
Two groups
19.
The atoms
as
electrons
Some
fig.
The
The
classified
characteristics
(1)
The atoms
classified as acceptors
is
16),
acteristics
trons.
paragraph
of the donor form electron-pair bonds with electrons of four neighboring atoms of germanium.
19.
&%
>v
f*.
-4:
J-
ee*3
tfS^-JlMTMH
t--:,--
LEGEND'
ELECTRON- PAIR SONS
DONOR ION
OERMANlim CORE
Figure
EXCESS ELECTRON
19.
Germanium
21
(positive)
also contains
The germanium
taken as a whole therefore is electrically neuis, the crystal posseses a net charge of
tral; that
6. The fifth valence electron of the donor cannot form an electron-pair bond since there are
zero.
electron-pair
an
crys-
electron from the donor. At normal room temperature (70 R), enough thermal (heat) energy is
away
e.
refers
to
the
negative
charge
impurities
is
The
letter
the
of
excess
electron.
20. P-Type
Germanium, Acceptors
When
from, or
is
Figure 20.
22
Germanium
all
The acceptor
Note
since the
movement
of excess electron.
three
LEGEND:
ACCEPTOR ION
ERMANIUM CORE
HOLE
T0-7
Figure
valence electrons.
21.
Germanium
an
normally be
electron.
filled
a hole.
electron-pair
c.
It is possible for
of the acceptor.
(2)
The second change is that the germanium atom, which requires four valence
with only three valence
The germanium atom, lacking
electrons, is left
electrons.
bond
of
holes
are
and
presented
hole (positive).
The germanium
crystal taken
23
mm
sieve*
towmo nets
"ilSV-iji,
fcKfl*
>
^^
^*"Nv
^
"^V
-,v^
Figure
e.
22.
Germiroium crjwtal with acceptor atom, showing electron from electron-pair bond moving toward
Germanium containing
acceptor impurities
P refers
21.
The
letter
Movement
of Hole
a two-dimensional representation
of the mechanism involved in the movement of
a hole through a crystal. In A, figure 24, the
hole is in the upper left hand corner. An electron from an adjacent electron-pair bond moves
to the position of the hole. The hole (B, fig. 24)
is now midway between top and bottom of the
Figure 24
crystal
is
and
position.
figure 24.
and
Characteristics
For the understanding of transistors and transistor theory, it is convenient for the reader to
think of the hole as a specific particle. Holes,
in motion, constitute an electrical current to the
same extent that electrons in motion constitute
24
an
hole.
ences, however,
and aluminum.
by electric and magthe same manner that electrons are
The
hole
netic fields in
is deflected
NEW POSITION
(ORIGINAL
OF HOLE
Figure
23.
Germanium
POSITION OF HOLE)
a.
Movement
of Positive Charges
The
an
electric
years.
In
Rowland
brought
is
23.
hole.
The compass
needle deflects.
The
direc-
(2)
body is clockwise.
The experiment
is
repeated,
starting
body (C,
While the
fig.
26)
is
25
<y<y
<?
HOLE
tj^-$
<S
(>
<><>\9
c>
*N
-0
<?
<>
<?-
PATH OF HOLE
<b
<J>
HI
<>
<?
<>
cj>
-6
LEGEND
ELECTRON
HOLE
GERMANIUM CORE
Figure
26
2.J.
^>
D
Movement
STRING
BODY BEING
GIVEN A NEGATIVE.
CHARGE BY CONTACT
NEGATIVELY
CHARGED
RUBBER ROD.
ELECTRONS
ADHERE TO
SURFACE OF
ROO.
STRING
NEGATIVELY,
CHARGED
BOOT
DIRECTION OF
ROTATION
NEGATIVELY CHARGED BODY,
BEING ROTATED.
D
TM690Figure
25.
27
STRING
POSITIVELY
CHARGED
GLASS ROD
(DEFICIENT IN
ELECTRONS)
STRING
POSITIVELY
CHARGED
BODY
DIRECTION OF
ROTATION
POSITIVELY CHARGED BODY,
BEING ROTATED.
D
TM690-
Figure
28
26.
generated with the direction of the magnetic lines of force as shown. The compass needle deflects. The direction of
the magnetic lines of force is the same
as that for the negatively charged body
(D, fig. 25), but the direction of rotation of the positively charged body is
opposite to that of the negatively
charged body,
This experiment proves that the movement
of positive charges constitutes an electric current.
in this
b.
(negative),
(positive).
When
TYPE GERMANIUM
TERMINAL
TERMINAL
BATTERY
P-TYPE GERMANIUM
ELECTRIC LINES
OF FORCE
BATTERY
B
TM690-23
Figure
27.
ii
P-type germanium.
29
nal
2,
(2)
fills
the hole.
would be
nium.
Observe that the holes flow in an arc
1 to
terminal
2.
Under
shown
in
is repeated, but in addition, a field
of electric lines of force is introduced into the
body of germanium. The field is established by
The
electric
direction
across
an electron
that
(negative)
Section
III.
site to
to
PN jv/rwtion. The
PN junctions permits
and
silicon, in circuits
germanium
normally employing
elec-
PN
26.
a.
PN
Junction, General
manium and
30
terminal 2
PN JUNCTIONS
referred to as a
at
1 to
(2)
When
is
25. General
surface
this happens, an electron from an electron-pair bond in the crystal and near
from terminal
b.
would be
When
and therefore do
The cores and
may be
The
would be
ary.
holes
seen
considered to be station-
move haphazardly
The movement
trons
is
also
movement of charges
in the absence of
N-TYPE GERMANIUM
P-TYPE GERMANIUM
A___
Q.
\Q
Nt
+J
\
\
1
V^i
\
\
\
N
LEGEND:
HOLE
GERMANIUM CORE
^J
CO
ACCEPTOR
^^
DONOR
(POSITIVE)
ION (NEGATIVE)
ION (POSITIVE)
Figure
28.
TM690-I3
6.
germanium.
Figure 29 shows the same two sections of
to
form a
PN
Note that no external circuits or voltages have been connected to the germanium; nor is the germanium exposed to
external electric or magnetic
(2)
graph
fields.
all
combination.
is
When the
,re
27.
27. Junction
a.
junction.
(1)
of the barrier
The
called a barrier.
germanium;
Barrier
in the P-region
31
N-TYPE GERMANIUM
P-TYPE GERMANIUM
-J||Lt
legend:
SPACE-CHARGE
EQUIVALENT
BATTERY
CJ)
GERMANIUM CORE
(^
^^
HOLE (POSITIVE)
EXCESS ELECTRON (NEGATIVE)
Figure
29.
negative charge on the acceptor ions. As a result, total recombination of holes and electrons
cannot occur.
b. The region containing the uncompensated
acceptor and donor ions is referred to as the
depletion region. That is, there is a depletion
of holes and a depletion of excess electrons in
Since the acceptor and the donor
this region.
32
TM690-I4
region
is
also referred to
as the space charge region. The electric field between the acceptor and the donor ions is called
a barrier. The effect of the barrier is represented
manium
crystal.
The
difference of potential
from
manium
(negative
is
The
cludes the
the
28.
tenths of a volt.
PN
PN
movement of holes or
electrons across
junction.
c. It is stated in a above, that total recombination of electrons and holes cannot occur. Inspection of the polarity of the space-charge
Note
germanium
a.
are
already at the highest positive potential (positive terminal of space-charge equivalent battery)
-
P-TYPE GERMANIUM-
DEPLETION
REGION
-^- --9-i
V-_o
\
\
-N-TYPE GERMANIUM
a>^vr>-
Tcfb
BATTERY
LEGEND:
^J
GERMANIUM CORE
HOLE (POSITIVE)
^^
^y
ACCEPTOR
DONOR
ION (NEGATIVE)
ION (POSITIVE)
Figure
SO.
PN
33
tive terminal
The
nal and
This action
junction.
biased in the reverse direction; or simply, a reverse bias is placed across the
junction.
e. It is possible to apply a reverse bias greater
PN
How-
figure 30.
tion
normal when the excess reverse bias is removed, provided that overheating does not permanently damage the crystal.
b.
battery,
PN
junction
is
break down.
is
avoided.
The
to
29.
PN
P-TYPE GERMANIUM
N-TYPE GERMANIUM
BATTERY
LEGEND:
o
Q
Qy
GERMANIUM CORE
HOLE
DONOR
C
ION (POSITIVE)
Figure
34
SI.
PN
(POSITIVE)
TM690-I6
PN
junction.
The
Figure 32
diode.
is
However, cur-
When
the
PN
germanium.
junction
is
The
PN
junction
(par.
29)
is
(par.
Note
bias
is
PN
ward
direction.
Figure
32.
35
IV.
Section
TRANSISTORS
device
31. General
PN
PN
age).
For a given
current, the
sections of
PN
a signal could be introduced into one PN junction biased in the forward direction (low resistance) and extracted from the other PN junction
biased in the reverse direction (high resistance).
This would produce a power gain of the signal
an
0"0"0 0'0"
-
0"0*0*0*0'
r
Q
.
""
DEPLETION)
PNP
DEPLETION
<+)_
)'
"(J)
e $_
'
<?*0
<?
-J_"~
LEGEND:
mm
HOLE (POSITIVE!
ELECTRON-(NEGATIVE)
ACCEPTOR
ION (NEGATIVE)
Figure
SJ.
Two
sections of P-type
36
transistor.
0* 0* O*
#
' * *
0' 0' 0" 0* '
A, figure
NPN transistor.
RfGION
REGION
0' ^"_I0
>
required.
Paragraph 33 covers the combination of two sections of N-type germanium and one section of
~ "" "
~ ~ """
" "" "
O"O'O'0'O-
PN
germanium are
transistor is referred to as a
Such a
external circuit.
covered
in
is
Transistor
To form two
a.
is
when developed
PNP
32.
power developed
b
i.
junction
ward
direction
in
(2)
(1)
d.
paragraph
29.
A, figure
35,
COLLECTOR
Jl
O
>
Kg
i
<+)
J0
<*)
o
<*r
b
f
\ \
"(+>
<>
<*.
09000
HV
COLLECTOR
EMITTER
1
T
1
1
JL
b
b 0/9
00
(+)"<+)
<$t$>
o^b ? q
&Q
$ b-
>1
LEGEND:
^ ELECTRON
HOLE (POSITIVE)
(NEGATIVE)
Figure
34.
Forward
V. ELECTRON FROM
ELECTRON-PAIR BONO
bias between emitter
collector (B).
37
COLLECTOR
EMITTER
A.
r<g)
0_0
00 QQQ
J3 >l
01
0^0
<*>.<+)
rv
-w
-4F
COLLECTOR
BASE
EMITTER
Q O O O O P Q 10 Q O O O O Q
" . Q iE)
Q
3 b "
^c
(^
r( "6
V.
>1
|i|i
LEGEND:
Q
^
H OLE (POSITIVE)
LECTRON (NEGATIVE)
(+) ONOR
Figure
ION (POSITIVE)
S5.
between base
Simultaneous application qf forward bias between emitter and base and reverse bias
and
collector of
PNP
and
collector.)
Many
38
TM690-20
by the acceptor ions (negative) in the collector and the negative potential of the base-
tor
collector battery.
obtain maximum power gain in a tranmost of the holes from the emitter must
diffuse through the base region into the collector
This condition is obtained in practice
region.
by making the base region very narrow come.
To
sistor,
33.
is
NPN
Transistor
of the
PNP
NPN
transistor
transistor (par.
32).
The
The
The
fig.
38).
In
to
is
flowing from
ferences.
a.
NPN
polarities
reversed.
are
necessitated
is
low
is
by the different
positional relationships of the two types of germanium as used in the two types of transistors.
This condition
the electron.
transistor
voltage
bias
PNP
emitter-to-collector
collector resistance.
not increase.
34. Transistors
and
Electron Tubes
Some
of the differences and similarities between electron tubes and transistors are discussed
in a through e below.
c.
The main
The current
to collector.
The
cathode,
grid, and plate of the electron tube are comparable to the emitter, base, and collector respectively of the transistor.
b.
Plate current
cathode voltage.
is
In this
respect,
the collector current-collector voltage characteristic of a transistor with fixed emitter-base volt-
age (A,
fig.
38)
is
off
The
is
boil electrons
The
transistor
has no heater.
d.
plate
is
cathode.
collector
spect
to
For current
may
the
depending
on
whether
For most
and
base. Thus, in these cases, the input resistance of an electron tube is much higher than
A.
JL
^_
3f "
~ ~ >i
k:'
~
"
to
HI
LEGEND:
HOLE (POSITIVE)
ELECTRON (NEGATIVE)
OB
DONOR ION
Figure
36.
(POSITIVE)
) ACCEPTOR
ION (NEGATIVE)
ELECTRON FROM
ELECTRON -PAIR BOND
39
CONTROL GRID
CATHODE
Atoms
c.
particles called protons, negatively charged particles called electrons, and uncharged particles
called neutrons.
d.
conductor
is
PLATE
and aluminum.
per,
An
e.
loosely
glass,
insulator
is
held electrons.
and porcelain.
f.
of which
is
A crystal is
silicon,
and
in a specific pattern.
h.
The
from those of
and
silver
single crystal
METAL TAB
B.
JUNCTION TRANSISTOR
TM690-25
Figure
its
t7.
output resistance and similarly the input remuch lower than its
sistance of a transistor is
output resistance.
35.
a.
Summary
All matter
PLATE VOLTAGE
is
elements.
i.
The
B.
an atom.
40
is
called
Figure 88.
and
Germanium and
silicon
may
The
potential difference
is
called
riers).
q.
junction transistor
is
a sandwich of P-,
excess electron.
phosphorus are
k. Arsenic, antimony, and
examples of donor materials.
I. P-type germanium contains acceptor impuriAcceptor impurities are materials which
ties.
have three valence electrons. Because four valence electrons are required to form and complete
germanium.
r. Holes constitute the main current through
A
A
o.
depletion
PN
(space charge)
junction.
The
PNP
transistor.
The
in the
u.
vacuum
emitter-base junction
is
forward (low-resistance)
The
tran-
base-collector
tube.
normally biased
direction.
junction
is
normally
at
the
region occurs
potential
difference
v.
41
CHAPTER 3
TRANSISTOR AMPLIFIER FUNDAMENTALS
and Graphical
Symbols
The reference
cathode -
39).
fig.
a.
portion
6.
may
is
Q and
the
COLLECTOR
Ql
number
BASE
V
Graphical Symbols.
The three element (triode) electron tube
requires only one graphical symbol (A,
fig. 39), because conduction within an
electron tube occurs only through the
1-
-X >
(1)
movement of
must be
plate
As
electrons.
EMITTER
B.
PNP TRANSISTOR
a result, the
at a positive potential
with
COLLECTOR
The
02
PNP
from plate
BASE
^d r
to cathode.
39) the
emitter to collector current carrier in
In the
the crystal
transistor (B,
is
fig.
For
EMITTER
from emitter to
must be negative
C.
NPN TRANSISTOR
(3)
arrow) to collector.
In the NPN transistor (C,
fig.
39), the
In the external
from the collector to the emitter (opposite to direction of the emitter arrow).
circuit,
42
electrons
flow
TM690-27
Figure
3.9.
operated as a Class
a.
The
-first
letter of
amplifier.
the
type of transistor
A PNP
An NPN
The second
b.
letter of the
common
type of transistor
vice
A PNP
at
is
con-
is
lector.
mon-base
NPN
c.
The
and second
first
therefore
circuit
is
also
re-
sistor,
to the emitter.
(3)
In a
positive with re-
and the
the emitter
collector respectively.
PNP
NPN
The dc
(B andC,
is
always
on the emitter
39).
fig.
CB
collector, respectively.
f.
is
always forward
The
collector-base junction
h.
An
from the
tracted
versed biased.
sistor
collector
currents.
tion
collector-emitter cir-
cuit.
105.
In C, figure
into
always re-
is
paragraph
amplifier, refer to
Common-Emitter Amplifier.
(1)
biased.
g.
b.
(CE)
is
amplifier.
lector currents.
(2)
a.
Common-Base
(1)
Amplifier.
40, the signal
In A, figure
is
introduced
conventional,
circuit
triode
amplifier.
arrangements (B and F,
Other
fig.
40)
common
detailed
tracted
of the transistor is
the input circuit and the
output circuit. For this reason, the configuration is referred to as a common-
base
(2)
circuit
ex-
into
is
to
(CB )
cir-
cuits,
TM
of
the
conventional
11-662.
in-
impedances, voltage,
current, and power gains of the common-emitter amplifier, refer to para-
put
amplifier.
coverage
and
graph
output
105.
43
(3)
NPN
If an
Common-collector Amplifier.
In E, figure 40, the signal
(1)
into
is
TM
introduced
tracted
from the
emitter-collector circuit.
is re-
(CC)
am-
Proper biasing of a
fier,
plifier.
(2)
105.
This circuit
F, figure 40.
is called
the
class
transistor ampli-
forward bias on the emitand reverse bias in the collectorOne method for achieving proper
ter-base circuit
base circuit.
R2
*r
Figure
40.
vacuum
tube*.
;
:
OUTPUT
is
shown
in
A,
Common-Base
Amplifier. In order to opercommon-base amplifier with * single battery (fig. 41), a voltage-divider network is rea.
ate the
The
quired.
rectly
circuit.
ward
(PNP
tran-
sistor)
This condition
is
achieved
NPN
would have
42.
batteries, or
Figure
to be reversed.
transistor
i
Figure
41.
is
single battery
bias.
b.
Common-Emitter Amplifier
(1) There are two methods of introducing
bias voltages from separate batteries
into the common-emitter amplifier. The
first method (C, fig. 40) is used if it is
desired to place the emitter at ac and dc
ground potential in an equipment. The
second method (A, fig. 42) is used if it
is desired to have the base-emitter bias
battery series aid the collector-emitter
battery.
If an
transistor were
used, both batteries would have to be
NPN
reversed in direction.
(2)
The common
emitter amplifier
may
The
required.
is
previously that
also
fig.
at
the
highest
positive
potential.
two
a voltage divider.
PN
junctions act as
The
PN
junction be-
tween the collector and the base represents a high resistance and develops the
larger voltage drop.
The
PN
junction
45
Common-Collector Amplifier.
(1) There are three methods of introducing
bias voltages from separate batteries
into
common-collector
the
A
in
is
The
internal
CB
Rela-
Amplifier
of the
transistor
to be reversed.
emitter current reaches the collectpr the remainder flows through the base. In the figure, the
total emitter current is represented by the letter
/.
For discussion purposes it is assumed that
batteries
(base-collector).
proper forward
the
establish
bias (base-emitter)
(2)
amplifier.
One method
sistor.
If an
The common-collector
NPN
The
reverse bias
fig.
(base-collector)
The forward
PNP
same.
h. Voltage Phase Relations.
(1) The wave forms on the illustration represent voltage wave forms. The input
signal produced by the signal generator
on the left and the output signal developed across resistor Rl is on the
right. Consider an instant of time when
the voltage {AB) from the signal generator opposes the forward bias prois
TM690-3I
Figure
46
b&.
on the output wave form. For the entire half cycle that the input signal goes
positive and opposes the forward bias,
the output signal goes positive.
(2) Consider a second instant of time when
the voltage (CD) from the input signal
aids the forward bias produced by the
I
.091
Figure
44.
Common
base-emitter battery.
ward
The
resultant for-
This
effect is
shown by (CD) on
CB
amplifier.
a.
through an
NPN CE
amplifier is indicated
by
To
the direction of the arrows in figure 45.
simplify the circuit explanation, the flow of the
minority carriers across the reverse-biased basecollector junction has been ignored. The portions
of emitter current that flow through the collector
If a
wave forms.
resistor to
(less
This effect is shown by AB on the output waveform. For the entire half cycle
that the input signal goes positive and
aids the forward bias, the output signal
goes negative.
(2) Consider a second instant of time when
the voltage (CD) from the signal generator opposes the forward bias produced by the emitter-base battery. The
resultant forward voltage
is
decreased,
El
sistor to
become
less
ne
Figure
Ifi.
47
This effect is shown by CD on the output -waveform. For the entire half cycle
that the input signal goes negative and
opposes the forward bias, the output
From
through the
CE
amplifier.
(3)
amplifier.
General.
(1)
The
has been ignored.
emitter current that flow through the collector
and the base were discussed in paragraph 40a.
transistor were to be used, the polariIf a
ties of the batteries would have to be reversed
junction
of
same.
b. Voltage Phase Relations.
the
(1) Consider an instant of time when
input voltage (AB) from the signal
generator aids the forward bias voltage.
The resultant forward voltage at this
instant increases, thereby increasing the
The increased
total emitter current (/)
current through load resistor Rl causes
.
shown by
AB
on
emitter current
Figure 46.
48
is
NPN
NPN
This
45,
PNP
part.
In figures 44,
collector-base
portions
correspondingly re-
(2)
at all times, if
discussion of the
NPN transistor is
PNP transistor
current flow in an
given in
(3)
below; the
discussed in
is
6.
The
below.
letter
sym-
in 6 below.
Letter Symbols.
(1)
of the
CB
amplifier
is
toward the
emitter current.
This value
in transistor electronics
is
and
(4)
important
is
and
is
Given: 7,= 1 ma
Icbo=0.01
a/6 = 0.92
=0.08
The
(1)
subscript letters
from the
Example 2:
Transistor.
Given: 7 e =l
This
To
indicated by the
circled
N.
(holes)
the
minority
ma
carriers
Conclusion
The
collector-base cur-
P-type germanium.
ma)
(fig.
This
(2)
is
base.
germanium.
= 0.01
ma
Icbo= 0.02
a/s =0.99
(electrons)
emitter-base curis
NPN
ma
The
ma)
rent (0.08
ma
/.-/,= 1-0.92X1
designated
designated Icbo-
a f iJe )
study the
and
(2)
(I e
clarification,
Conclusion:
The
is
For
Icbo-
depends on
Example 1
/-
(3)
base.
following examples
The
The
referred
to as
(2)
is
The
minal
of
About
the
1 to 8
collector-base
battery.
These holes
are generated in the base region and near
the base lead. Generation of the holes
causes an electron current to flow in the
base lead and away from, the base.
d.
PNP
Transistor.
The
PNP
is
discussion in c above,
transistor
(fig.
48).
region.
44.
Summary
PNP
is
and
NPN
required to
49
fb>
3>
S
(Ia-Cf b I<)
ICBO
v'b
LEGEND:
ELECTRON CURRENT
HOLE CURRENT
Figure
Current flow in
J7.
NPN
transistor.
fb l
N
(It-fkl*l
*
l CBO
-rf
LEGEND:
ELECTRON CURRENT
HOLE CURRENT
Figure
50
48.
Current
flote in
PNP
trantittor.
b.
mon
The
base,
common
collector,
or a
com-
common-
emitter amplifier.
c.
The
of the common
similar to that of the conven-
configuration
circuit
emitter amplifier
is
tional (common-cathode)
d.
The
base amplifier
is
(common) grid
e.
The
common-
amplifier.
lector amplifier is
follower
amplifier.
(common plate)
amplifier.
amplifier.
h. There is a 180 voltage phase reversal of a
signal amplified by a common-emitter amplifier.
i.
The dc
of a transistor
away from
magnitudes of the base-emitter current (/e a f bl e ) and the saturation current (Icbo).
tive
51
CHAPTER 4
PARAMETERS, EQUIVALENT CIRCUITS,
AND
CHARACTERISTIC CURVES
Section
I.
INTRODUCTION
dashed line) in mathematical equations.
45. General
. The circuit behavior of any electrical element or device can be expressed in terms of
mathematical equations. The mathematical equations, however, only can show relationships
among
currents,
voltages,
resistances,
(2)
induct-
These quantities, or
dimensions, including their mathematical combinations, can be measured directly or indirectly
and are called parameters. Under most oper-
and capacitances.
ances,
by a single parameter.
in
consist of
resistance,
condition.
(3)
capacitance, induct-
elec-
and
(3) below.
(1)
An
is
is
53.
pro-
in paragraphs 47
Using the equivalent cir-
covered
the formulas for calculation of input and output resistances, and current,
voltage, and power gain may be devel-
52
circuit
The
equivalent
cuit,
that of
of the crystal over a wide range of applied voltages at varying frequencies can
be computed by expressing the relationships of the parameters (within the
cedure
through
shown
An
is
ators.
b.
and output resistances, the voltage, current, and power gains, under many
operating conditions without making
actual measurements for each operating
circuit element
TM 11-662.
cuit, it is possible to
may
46. CE Amplifier
a.
fier
In paragraph 38& the transistor CE ampliwas compared to the electron tube common-
"
3>
9
\
r~-H3I>
'b-
Figure
49.
and transistor
CB
amplifier current
circuits
and
53
Section
II.
HYBRID PARAMETERS
and Independent
Variables
If a device, for which an equivalent circuit must
be developed, is considered as an unknown object,
such as a black box (fig. 50), the only information
would be the currents (it , ic ) and voltages {v ie , Vce) measured at the input and output
terminals. Before equations can be established to
show the relationships among the currents and
These equations are interpreted in the same manner as those in a above. This choice of dependent and independent variables results in an equivalent circuit whose parameters are called shortcircuit parameters. This equivalent circuit is discussed in paragraphs 70 and 71.
available
v ce
OUTPUT
tities,
may be designated
and output
resistances,
and current,
Figure
SO.
is to
be developed.
ie
v,,=fi
(it,
ic=U
(i,
and
When
(vt, e ,
v ce ) are chosen
as the
*'<)
.=/i
(it, ic)
*=/
(ii ic)
and
equation states that base voltage vu (dependent variable) is determined by (or (/) is a
function of) base current it and collector current
The second equation
ic (independent variables).
The
first
These equations are interpreted in the same manner as those in a above. This choice of dependent and independent variables results in an equivalent circuit whose parameters are called hybrid
parameters. The reason for the term hybrid
parameters is covered in paragraph 53a. Since
this equivalent circuit is in most common use, its
development will be discussed in detail in paragraphs 49 through 58.
d. Other choices of dependent and independent
variables are theoretically possible, but have no
practical application and are not discussed.
ble) is
b.
When
(i
ic)
are chosen
54
t=/i
(. )
icft
(>>
and
and
Collector Voltage as
Independent Variables
The most commonly used
equivalent circuit
using hybrid parameters.
Hybrid parameters may be developed by considering the base current and the collector voltage
Some practical
as the independent variables.
considerations (b and c below), of the transistor
indicate that base current and collector voltage
a.
(par.
47c)
is
that
mined, then the dependent variables, base voltage, and collector current, may then be established.
(2)
The
able^) and
Base-emitter
voltage
an independent variable
is desirable.
c.
is
lector-base
circuit
exhibits
high
must be known.
will then be the
is
resistance.
pendent variable.
This procedure is comparable to determining the speed of a ship operating
under its own power in a current (moving body) of water. The total speed
(dependent variable) of the ship is the
sum of the speed of the ship due to its
own power (first independent variable)
and the speed of the ship due to the current (second independent variable). To
rent
Determine the effect of each of the independent variables (4, v ce ) on the dependent variable (vs e ). Then, add the
separate effects to obtain the total effect
of the independent variables on the de-
it
50)
The
(1)
source.
easily
(fig.
when
is
(3)
Similarly in the case of the general equation (a above), the effect of the ac base
current
collector volt-
below.
This
is
kept
discussed in (4)
Next, the effect of the ac collector
.
is
zero (4=0).
below.
base current
4 and
(dependent variable) to
(first
Hote.
55
(4)
To keep
shown
in
A, figure
zero
is
expressed as follows:
51.
Once
The
by voltmeter V.
is
lector voltage
(4=0)
zero (v ce =0)
while collector
is
W.
expressed as
follows
Vw
Once
ce
general equation (a above). The numerical values of the ratio of base voltage to collector voltage while base current is zero (4=0) are obtained from
(4)
and
(5)
above, the general equation (a above), of the input circuit can be expressed as follows
current
Vw. H
This quantity forms the first term of the
expanded equation (<? below), of the general equation {a above). The numerical
values of the ratio of base voltage to base
sistor.
constant
a. In paragraph 47c, the general equation relating collector current 4 (dependent variable) to
base current 4 and collector voltage v ce (independent variables) was expressed as follows
is
(5)
The
base voltage
(4)
is
(vbe)
T\
!?
"i'r'
St
<H
s. _J<
1
on
To keep
figure 51.
VI.
56
voltage Vce
The
Circuit (black bow) arrangements for measuring effect of base current (i) and collector voltage
(v,..) on base voltage (vta ).
Figure 51.
:.
(fig.
ce=0
c below.
-i-
As in
is
ac short-circuited
resistance).
Figure
52.
Circuit (black box) arrangements lor measuring effect of base current (i) and collector voltage
(v) on collector current (i).
of
collector
measured by ammeter
current
12.
The
are
are measured by
ratio of
ammeter
/.
The
ratio
is
expressed as follows
\/i 6 -o
Once
Once this ratio is obtained, the effect of
a given value of base current on collector current can be expressed as the product of this ratio and the given value of
base current:
(U-
00
This quantity forms the
expanded equation
first
term of the
The numerical
(2)
The
zero
teristic
c.
on
(4=0)
are obtained
is
from charac-
in b (1)
and
(2)
To keep
V)
(ic )
Use of
graph
53.
57
The
coefficients of the
cir-
hand
The
ex-
side of the
The
curves.
characteristic
ex-
pression
is
nated
for
(1)
independent variable; and the running parameter, for a family of curves, is the independent
variable that is kept constant.
Term aj Input
VoeC
curve.
a. First
Circuit Equation.
common
configuration;
emitter
thus
The
\ A1 B Svcg -c
(2)
the input characteristics for that transmay be used (fig. 53). Since the
istor
VW...-0
The input
(base)
static
characteristic
curves of a typical transistor for this coefficient are shown in figure 53. Note that
the base voltage (dependent variable) is
plotted vertically, the base current (independent variable) is plotted horizon-
Assume
and
collector voltage).
pendent variable) is the running parameter (the fixed dc value at which each
curve is obtained). The ratio of base
operate with a base current of 150 microamperes (ii&) and a collector voltage of
This point is located and
7.5 volts.
marked Xon the 7.5-volt input character-
istic curve.
values of base current and collector voltage is the slope of the curve at those par-
is
tally,
ticular values.
is
BC
point
ever,
equals
Al B so
;
approximately
equal to -jp
AVBb
and
AC
equals
that:
base voltage.
h ie
= BC
AC
/AVbb\
\ AlB )v
be made
\i/t..-o
The
left
hand
V A/b
/,VCB-C-
58
To determine AVbb,
_/AFB A
(v*\
hand
side,
AF=0.3 0.23=0.07
volt.
To
The
static
characteristic
curves
of
is
plotted
A/B =210-95
variable) horizontally,
= 115XlO-amp
The value
running parameter.
of the
a
given point. Since the slope is not constant, incremental values of current and
voltage must be obtained. Equating
h fe
'-(m
the
coefficient
0.07
115X10"
VW<b -.
the
to
is
incre-
obtained:
=608 ohms
\A=0 V
This is a typical value for h, e Depending
on the transistor, h fe may vary from 300
to 800 ohms.
.
6.
Note that IB =C
base
(1)
is
zero
tic curves.
The
expression
is
the ratio
input voltage,
it is
referred
to
as the
3-i
200
BASE CURRENT
Figure
SS.
Typical input
(base)
static characteristic
I B (MICROAMPS)
carves
for
250
300
TM690-94
equivalent circuit.
59
reverse (feedback)
To
AVBb,
determine
must be
amplification factor,
voltage at point
V-Tl
(2)
at point
that transistor
Assume dc
used
(fig.
volts
7.5
age at point
for
characteristics
may be
and
volt.
current
base
thus
To
\&VC bJib -c
reverse-transfer
(0.23 volt)
(0.22 volt)
54).
\ia
AFc =10-3
of
collector
7 volts.
on the
This point is marked
A right-angle triappropriate curve.
is near
angle is drawn so that point
the center of the hypotenuse. The slope
voltage.
RC
is
Line
^ 0.01
7
_BC
=0.0014
^^AC
This
is
\^VC b),b .c
JAVB b\
equal to -jpy
/*
<n
o.
00
Depend-
z
4
o
tc
u
bJ
5-L
CD
IOO
o
>
u>
0)
<
as
tc
I B '
o
bl
<
CO
2.5
7S
10
60
5-1.
12.5
13
TM690- S5
Line
BC
AIC and
equals
AC equals
BC
a. First
/.
the
'AC
is zero, (
\A/bA
^)
The
static
characteristic
curves of
shown
= 1.5 ma
= 1.5XlO"
(~)
coefficient
to
the
is
A/c =5.5-4
Note that
is
incre-
obtained
/B = 175- 120
that the dc
kept constant. The
The
curves.
expression
is
is
f.
the
_ 1.5X10'
designated afe
SAlc\
expression
is
amp
amp
VCB =C indicates
collector voltage
To
= 55 im
= 55XlO-
The
line
A/a, so that
Circuit
(1)
and
55X10"
is
=27
This
is
on the
emitter; thus-
a/e
may
Depending
vary from 20
to 80.
b.
"K!tX
(2)
To
Assume dc
( -f- )
calculate
sistor,
is
The
slope
equal to
=~
AC
The
static characteristic
\Vce/i b -o
shown
in figure 56.
Note
curve
is
VCE ='2
50
100
BASE CURRENT
Figure
150
IB
TM690-56
55.
common
\AVcjtA
expression
on
related
to
directly
(a
conductance).
and
hybrid,
is
input ac open
designated h ot ; h for
for output,
emitter configuration
thus
for
common-
A/c and
line
AC equals
To determine A/
of collector
, the value
current at point C (4.2 ma) must be subtracted from the value of collector cur-
(4.6
ma)
ma
=0.4
=0.4X10"5 amp
thus
A/c =4.6-4.2
AVc*
_BC
collector voltage.
62
equal to
"~AC
rent at point
/AJcA
=
\AVCJ, B
(2)
is
circuited
The
BC Tkme
-^y
so that
The
X is
.
BC equals
VWfx-o
300
250
200
(MICROAMPS)
To determine aF C
voltage at point
js,
must be
(12.5 volts)
thus
a.
= 10
The important
General.
factors obtained
AVCE = 12.5-2.5
volts
(1)
h=(^f)
\ ai B /vCB -c
put shorted.
hoe'.
Bg
(2)
i*Tt,\
)
\a T7
Vcb/i b -c
.
reverse
open-circuit
_ 0.4X10~
10
(3)
/e=( -r~T
\&i
B//vcs -c
=0.04X10- 3 mho,
is
on the
(4)
may
Depending
ho,=(
^y"
put open.
Note. The factors ((l)-(4) above), consist
of two pure numbers u and a r ,), a resistance
35
(hi.),
and a conductance
(ft..).
This mixture
7.5
10
short-circuit
vary from 10
Figure
forward
or
=40/imho
This
>
12.5
TM690-57
Output (collector) static characteristic curves for common-emitter configuration of hybrid equivalent
circuit.
63
Input Circuit Equation.
b.
To
=h
Vi,e
ieit
IJLreVce
The
This equation suggests a series circuit (A, fig. 57)
consisting of a resistor (hie) in series with a volt-
(2)
(/! v ce ).
Output Circuit Equation.
age generator
c.
(4)
This
)
afeH + KeVce
This circuit
is
"I.
CreM
base current.
base voltage.
in
collector current.
collector voltage.
(7)
BL
load resistance.
(8)
4< = currentgain.
Note.
Input resistance
r, is
r<5>
source.
Vbc,
suggests
'b
it,,
v.,,.,
parallel
in
Rg
(6)
a current generator
with a conductance (hoe).
shown in B, figure 57.
equation
(a fe i
5)
vg voltage of
To
Derivation.
Is
as follows
(1)
By
be
%
(2) Consideration of the output circuit will
result in an expression containing both ic
ib .
X
-WV
( r\j)~
<>
= a,.i +h
t
oev ce
+i
Note. In establishing this equation, all currents are assumed to flow toward point X. This
assumption will result in a negative sign in the
final
TM690-58
Figure
57.
Hybrid parameters used for input, output,
and single equivalent circuit of transistor.
(3)
(4)
d.
fig.
(5)
Substitute
L i c for v a in the equation
((2) above)
0=<*/eis+ (h e RL ic+ic)
Factor
ic :
Solve for
(that
is,
A}:
it,
CE
64
4,4H
-<*/
hRL +i
I_
B
TM690- 59
Figure
58.
CE
amplifier
and
its
equivalent circuit.
(2)
is
0=a
Use of
formula in a numerical
example is given in paragraph 596.
General.
v c ,+i c
0=a
fe i b
+h
oe v ce
+-^-
same
(5)
Derivation.
To
voltage gain.
i6
as follows
By
oe
(1)
+h
this
6.
ib
fe
cir-
h it
definition, voltage gain is the ratio
A,= u-
(7)
hu
_a
fe
v te
i t in
equa-
and expand:
aft Hrt
n re v"ct
ce
fee
65
Rearrange
(8)
(7)
::
Substitute in
(2)
current gain
(par. 546(6))
(9)
q(
and
(4)
afe
h <{h' +
(3) above:
ple
irhr)
A=
'
"/ Rl
(htthnafeHr^RL+hu
Use of
example
is
a.
CE
General.
for a
58).
fig.
notations used.
Derivation.
To
and output
(1)
volt-
b.
is
as follows
The negative
Use of
(10) This equation ((9) above), is the voltage gain, but it is normally rearranged
circuit (B,
Expand
\
t
Vi.
a.
/e Rl
A M +-g
age.
<*fe
Repeat equation
CE
V be
The
58).
(2)
for a
= k ui +
n
ll re
V cl!
(3)
Solve
(2)
above
v <
for
5-':
v"
_i_
By
(4)
definition:
Power
G= Power
delivered
delivered to load
To
e
eliminate 4- from the equation ((3)
to input
as follows
(2)
Rearrange
(1)
(5)
"=(!>()
(3)
is
the product of
Vtc__
%b
66
ce
above:
-p
ate
h
"roe
|
I
\^f-\
((5) above),
for
(V) in
(3) above:
--hie+Urt
it"
\
(7) This
expression
K + k)
'
((6)
above),
is
the
be:
rearranged, as follows
5
otftir,
rr-
+ hceRL
The conductance
1)
shown
in figure 59.
For notations
The only
output).
tor
short
circuit
of
the
for output
The technique used to determine the output resistance formula is to remove the
signal source from the input circuit (B,
fig. 58) and place it in the output circuit
is r
resistance.
(2)
ma
mhos
= mv
Use of
a.
h e
~Rh
( A, fig. 59 )
The equivalent of the signal
source resistance {Rg) remains in the input circuit. In the output circuit, the
.
follows
To analyze the output circuit with voltage generators alone, the current, generator (in dashed lines) in the output circuit must be replaced by a voltage
generator. According to network theory,
a current generator and its shunt conductance (B, fig. 59) can be replaced by
a voltage generator and a series conducIt is required, however,
tance ( C, fig. 59 )
.
hot
current (mv)
conductance (mhos)
5
ma
=
mhos
An
open
= voltage
(mv).
mv
circuit of the voltage generator
mv)
With
59.
67
c.
Derivation.
To
(10)
By
h it +R,
as follows
hoehie
(2)
=BLi
+i
ltj
ll>oe
eters
oe
a.
(3)
resistance (r) is the resistance looking into the output of the tranThe signal source
sistor (D, fig. 59).
The output
General.
(1)
sees
(4)
=RL
ic
+r
(2)
ic
Substitute equation
vg
(3)
above, for v g in
above.
emitter-swamping
resistor,
perature-stabilize
the
(par. 74&(2)).
Rz.ic+r<,ic=Rt.ic+rL
+r1
floe
(5)
Subtract
RLi
both sides by
it
floe
(2)
Resistor
RL
Capaci-
is
Solve equation
(1)
above, for
(7)
The
first
step
is
to eliminate the
h le +R,
Note that
Substitute
the
above), and
expressions
i c ((7)
r~ +(**) (
hoe
(9)
for
above), in
(5)
((6)
above:
"
\
\hoe/\hie^rRgl
-)
r
Jt "
o=+(^)
\hoe/\h + Rt/
hoe
le
is
")
its
swamping
re-
bypass capacitor
dashed
lines)
with
60).
At
o/
(#3)
with
(02), and the battery. The resultant circuit is shown in B, figure 60. The second
step
*l,eV
above:
68
(tv),
ib:
above)
1b=
output resistance
i-e
current gain
(6)
current
Capacitor 02 bypasses
resistance
floe
used to tem-
emitter
fi>oe
ex-
59. Numerical
r~r
OT iKj
The
vt
/ir/+A
its
mhos.
^.=20X10^
>
-wv-
/*re v ce
"fe'b
-vwv
(o,
-0-
<n>
wv
o te b (5mo)
i
(5
"fe'b
mhos)
h oe (5 mhos)
ib
llmv)
<5>-
<5>
/*re*ce
<*fe'b
hoe
U'o
|
v ce
"be
_l
1c
'a
>
TM690-60
Figure 59.
to
69
6.
To determine
Current Gain.
the current
above)
thus
A,=
(2)
G=A,A
-/
(3)
h c JtL +\
known
the
Substitute
&nAA v
values
for
= 18,278
-50
A,=
(20X10- 6 )(15X10 3 ) + 1
-50
(4)
1.3
= -38.4
= 10X4.26
The answer
=42.6 db
Voltage Gain.
e.
To determine
the voltage
(1)
To determine
Input Resistance.
the input
_ hie+ (heh
ie
afel' r e)RL
1+hocRz.
-aItRL
A,=
known values
(htJloeOtftHr^RL+hu
in the
formula
(2) Substitute known values (a above), in
this formula.
A.=
r,
1,500-50X 5X
~ 1,500+ (20X 10-"X
1+20X10-"X 15,000
-50X15,000
(l,500X20X10- 9 -50X5X10-*)15,000-|-l,500
^ -75X10
10~ 4 ) 15,000
1,575
1,575
= -476
/.
The answer
age
is
180 in phase
is
(1)
reversed
transistor.
d.
h ie
the
power gain,
+R
heJlullrJXft+kixR,
proceed as follows
(1)
(2)
ff=
Rl
(hoML+ 1) [(A<A M aren)RL + A(J
(,.)*
Substitute
By substituting
the
known
1,500+1,500
|,
|,
_ 3,000
.035
values in this
70
(2)
known
r=85,714 ohms
HrRg
l00
,-!
|-i c
/p
,'*- ro
'ISK
"ce
OUTPUT
>
1
I
Mre vce
fe
'b
<n>
Rg
l00
ISK
OUTPUT
C
TM690-72
Figure
60.
Common
its
71
Formulas
plications.
many
ap-
CE
are useful in
age source)
maximum power
power gain (G m )
is
The formula
is realized.
for
maximum
as follows
Gm
<*f
*-*-( 1+
r;
{h te
is
R' =hu,
as follows:
K-ltV-rt
~K
5e_
V -fS)"
Condition.
as follows
is
g,
resistance (n)
amplifier
as follows:
6.
-L=ft /i
y
Rl
Section
III.
HYBRID PARAMETERS, CB
The
of the hybrid
(1)
v.b=j\(i
CE
derivations
CB
final
results
(2)
icMie,
b.
Vcb)
Output Circuit:
is
CC
Input Circuit
ampli-
fiers
The
lating the independent and the dependent variables may be written as follows
hiJlee
AMPLIFIERS
dependent variables.
61. General
a.
AND CC
"'#*
Expanresults in
the following
(1)
Input Circuit
(2)
Output Circuit
Curves,
and Equivalent
Circuit for
CB
Configuration
Figure 61 shows the transistor cona. General.
sidered as a black box and so connected that the
GB configuration results. The directions of current flow are arbitrarily assumed as shown. Consideration of the input current (emitter current
ie) and the output voltage (collector-base voltage
independent variables results in hybrid
parameters. The remaining quantities (emitterbase voltage Vet and collector current ic ) are the
Vcb) as the
72
ic
~\iX .o + \vlj
a
tt
curves.
This value
vertically
tive.
is
The number
that shown.
is opposite to
black box
input
cb OUTPUT
b
e
dc values.
(1)
The
first coefficient
above) ,
TM690-6I
is
fig.
Figure
61.
common
is
The second
coefficient
(6(2) above),
''e
/v eb ~0
-0 A/s
and output
62)
(4)
to input
circuits.
is
of the equation
JvCB -c
fig.
62)
The second
coefficient
of the equation
and
\>VcbJi e -c
is
d.
If
_/AFBB\
(1)
Input Circuit:
\*Vcb), b -c
This
(3)
is
V eb
a pure number.
This
The
first coefficient
ioi e
equation
+ UroVeb
represents
the
circuit
the
circuit
A, figure 63.
shown
Output Circuit:
in
(2)
=h
This
equation
represents
<*/='
\A/BA
circuit
CB
amplifier.
73
1-
o
>
>
IE
1
-30
-I
-10
-eo
V CB (VOLTS)
(<o)
_6
o
-8-
-I
10
(mo)
Figure
74
62.
-10
E =z.s (mo)
-to
V CB (VOLTS)
-30
KD>
I.
1-^
c.
The
Curves.
Characteristic
Static
static
he*
(1)
From
fig.
vw
1 *\j
<2>
y-
\_X
h itl
v n/v.,-0
=(t)
Mb
Jv ec =c
From
(2)
curves (B,
open
{lire)
fig.
can be determined
c
TM690-63
Figure
63.
circuit for
Input,
CB
output,
and
complete
\Vt Ji h -0
'
equivalent
/AVaA
(3)
be determined
assumed as shown.
(ib ) and output voltage (v ee ) as independent variables, and input voltage (*>6c) and output current (4) as dependent
rent
flow
are
arbitrarily
written
(1)
may
/am
\Mb)vvxc -c
be
tive.
Input Circuit:
a pure
is
sumed
wc=/i(ie, )
(2)
This value
Output Circuit
From
(4)
the output
static
is
characteristic
Expan*b
'e
""1
INPUT
"he
'
fi^\
1-.,
"
ou
U
i
V*i/.,-i
(2)
Output Circuit
vWi,,-o
TM690-64
Figure
64.
is
common
to input
and output
circuits.
75
t-I
o
>
o
CD
>
VgcjOtVOLTSI
-200
I
8 (Ala)
V EC (VOLTS)
-zoo
10-
-150
-100
o
Ul
5-
-50
H
xb
^
(Ida)
(ua)
20
30
V EC (VOLTS)
TM690-65
Figure
76
65.
CC
: :
can be deter-
(h oc )
(4)
Input resistance
'
(par. -57)
\Vec/l b .O
(5)
Output resistance
(par. 58)
h u +R,
hochu HreCtfe + h oe Rg
d.
If
b.
CB and CC Amplifier.
(1)
Input Circuit
Vb C
=h
amplifier (B,
ie
(2)
flreVec
fig.
67).
CE
Output Circuit:
Combination
CE
CB
CE
(2)
(huhot
(3)
Power gain
"rt
58).
fig.
CE
The
and the
above, also
states
for
kot RL +l
the same for the three basic configurations except that the subscript letter
(e, &,
or c) desig-
aieRh
<XreMrt) Rz,+hu
is
the game
(par. 56)
vary
6= (h ,R
amplifier (B,
A,=
dashed
similar to that
Paragraph 64
t
is
exist
A=
circuit
replaced
and
Amplifier. The formulas for input reoutput resistance, and gains for the CE
The
circuit
Gains
sistance,
is
(in
equivalent
its
of the
by
lines).
for the
a.
in a
67).
The formulas
in a (1) through
apply equally to the CB amplifier provided the subscript letter e is
changed to b wherever e appears.
e.
CB
(5) above,
fig.
for
change.
The equations
58)
fig.
for
+ l)[(h Ji a
(
l>e
)RL -\-h
re iirt
Actually the
77
B
TM690-66
Figure
66.
'
CB
and
Figure
67.
CC
its
equivalent circuit.
'<
"be
78
amplifier
TM690-67
::
The value
therefore, is in
= l,950 ohms
= 575 X 10-
/ = 49
A, = 24.5 m mhos
Aij=39 ohms
Mr
*<r=380
h u = 1,950 ohms.
a/c SO.
A. oe
CB
the
CC
CC
configurations to the
From CB
"
to
"
Kb
l+an
"
Examples.
CB to CC
*<
l+ + "'
k"
(2)
l+an
Example
M" _
CE
huhob
l+^~"
rs
These can be found by using the formuin the third column of the table (a above) and
uration.
las
con-
1 hahib,
l+an
CB
eters of the
CB
CC
l+an
h =>
a
!+/
and the
From
""
CE
CE
hibhob
h"
and the
the manufacturer.
CE
heKe
..
mhos.
From CE to CC
1+Otfe
configurations.
the
and the
A (6
= 24.5 m
From CE to CB
collector
10-_
Aj=0.49 m mhos
a.
CB
Common
arb = 0.98
magnitudes
Common base
/l(e
CE
relative
among
rations.
Common emitter
the
showing the
in parameter values
0.02
(1)
Example
=955X10--380X10- 6
1:
=575X10-"
(3)
l+/
Example
/=
an,
39
l-K-0.98)
=
-0.98
l-K-0.98)
39
= 0.98
0.02
0.02
= 1,950
ohms
(See
first col.
=49
79
(4)
Example
4:
hot
0.49X10"'
~~
used in transistor
+ (-0.98)
The
following table lists the hybrid parameter notations used by manufacturers and those used in
0.49 X1Q- 6
0.02
this
may be
manual
(col.
configuration)
(par. 65)
Configuration
Common emitter
Parameter
,
Input
1.
resistance
with
2.
3.
Forward short-circuit
4.
hu
.A,in
the
hlle
<*fe
kbb
hu
hib
hbc
fore
rue
Pbe
hcb
A. 21*
"f22e
wot.
Common
Common base
hfe
h oe
Alio
Aia-e
<*fb
hot
hiib
Mec
hbb
h ic
Ante
hrb
Urc
Al2c
Hbe
Jibe
hrc
hfb
atc
h'ive
aeb
heb
hfe
Jhee
h cc
hu,
he e
hcc
hpab
h tc
hee
hee
Wee
collector
hob
Tile
have
Kc
B2
1
Section IV.
OPEN-CIRCUIT
AND
c.
(fig.
50)
were chosen as the independent variables, the general equations relating the dependent variables
and the independent variables would be those
given in paragraph 47a. If these equations are
expanded, the following will result
Output
circuit
Vce=r r.ib-\-r
b.
cuits
,i c
The equivalent circuit (input and output circombined) represented by these equations is
in A, figure 68. The definitions for the
shown
coefficient
(1)
(2)
the equivalent circuit (A, fig. 68) can be transformed to that shown in B, figure 68. In this
is the base resistance, re the emitter
circuit
open.
called the
(3)
(4)
80
Input circuit
Vb,=r l ei t +ric
(2)
coefficients (r ie , r, r, e ,
(1)
SHORT-CIRCUIT PARAMETERS
output open.
mutual resistance
on output voltage).
the parameters of the
The
first
(effect of
and
r,
is
base current
relationships between
equivalent circuit (A,
fig.
(B,
(1)
r b =r, e
(2)
r t =r.
(3)
Ti
(4)
rm
re .
=r .r,
=r re r/e
t.
.
r=370 ohms.
(2)
r e =23
(3)
rd b% kilohms.
(4) r m
Parameters
Measurement. To measure the input resistance with output open (A, fig. 69) and the forward transfer resistance with output open (C,
fig. 69), the output circuit must be ac open-circuited. A dc path in the output circuit must be
maintained to supply dc bias current and voltage.
In practice, this can be achieved by placing a
high-inductance coil in series with the output
lead. However, at the frequency (270 cps) normally used to make the measurements, the rea.
Note.
e.
ohms.
quired coil
=3 megohms.
Vb
ret
->
by a small capacitor.
Wr-
'b
However, open-circuit
parameters are easily measured at a high frequency because the capacitance (neglected at low
m'b
B
TM690-68
Figure
ance.
For
this
reason,
is
sometimes
circuits.
TM690-69
Figure
69.
81
Current Amplification Factor. The openparameters do not produce the current amplification factor directly. The hybrid parameters
produce this factor (af e an, and a.f C ) directly.
b.
circuit
is
collector conductance,
(i)
The equivalent
b.
gfel>be
+ 9oeV
= g.
(3)
g=g+gtf
(4)
</=<7/+</re-
ib=gt,v be +g,eV M
circuit
ic
got=gu+gr,-
(2) g bc
paragraph 476. If these equations are expanded, the following equations result
(1) Input circuit
(2)
is
in
Output
e.
Ce
circuit (input
and output
cir(1) Sl e =0.64X10-
mho.
cuits
efficients
(1)
(2)
(3)
(4)
g re
conductance
(3)
with
output
input shorted.
y /e =forward transfer conductance with
output shorted.
conductance with input
g oe output
shorted.
c. The circuit setups required for measuring
the coefficients (g ie , g, ffte, and g oe ) are shown in
respectively of figure 71. Note
A, B, C, and
that each measurement requires that either the
input or the output circuit be ac shorted ; thus the
82
shown
in B, figure 70.
(4)
=0.25X10- 6 mho.
6
M =O.4OXlO- mho.
ffec
p=0.033 mho.
Measurement. To measure the reverse transfer conductance with input shorted (B, fig. 71)
and the output conductance with input shorted
(D, fig. 71), the input circuit must be ac shortConnecting the base lead to the emitter
circuited.
a.
resistance
ohms).
require ac open-circuiting the low-resistance input, which is easily achieved with a small inductive coil or resistor.
to that
(2)
In this
circuit,
g^
Current Amplification Factor. The shortparameters do not produce the current amplification factor directly. The hybrid parameters
b.
circuit
(a/,,, a,!,,
a. te
directly.
9re vo
9fe vbe
KS>n
'b-
-vw-
-VS/\r-
*be
9 bc
'b
;:9ce
be:
-'c
-'>
JC)| 9m
(i
Vbe
B
TM690-70
Figure
equivalent circuits
70.
C'v)
Figure
( v /
i
11.
BLACK
BOX
SHORT
83
and Hybrid
73.
CE configuration.
tors,
when developing
(fig.
57)
hybrid parameters.
values of the parameters (c above) , may
be obtained from the related static characteristic
curves (pars. 49-52).
e. By substituting the equivalent circuit (fig.
58) for the transistor, formulas for the following
The
may be derived
Current gain (par. 546(6)).
Voltage gain (par. 55b (10) )
desired values
(1)
(2)
(3)
84
Power gain
(par. 566(4)
).
the
Occasionally
open-circuit
parameters
are
(4)
a. For purposes of mathematical analysis, devices such as crystals, electron tubes, and transis-
d.
parameters, use the formulas in the first and second columns respectively of the f olio-wing chart.
Summary
variables
CB or the CC configuration
by changing
/.
transistor are considered the independent variables, an equivalent circuit (fig. 68) consisting of
(resistance
open-circuit
or
impedance)
param-
of the open-circuit
that their measurement requires the
parameters
is
param-
of the short-circuit
that their measurement requires the
ac short-circuiting of the low input resistance of
the transistor (fig. 71).
k. If the hybrid parameters for a given tranj.
parameters
sistor are
circuit
is
CHAPTER 5
BIAS STABILIZATION
Section
I.
INTRODUCTION
occurs, the transistor becomes inopera-
74. General
Bias (operating point)
is
dition
b.
described in
(2)
above,
is
the
(1)
detailed
discussion of the
plotted with a fixed collector-base voltage (Vcb) and a fixed emitter-base voltIf the collector current variage ( Veb )
internal
paragraph
NPN
would continue
until
severe distortion
TEMPERATURE "C
TM690-IOI
Figure
72.
85
VEb=S00
circuit.
(a(l)
resistor is referred to as a
(3)
ature is increased. That is, the emitterbase junction resistance has a negative
(2)
temperature-coefficient of resistance.
One method of reducing the effect of the
the emitter
lead.
Essentially,
re-
X)
swamping
sistor.
to 30
(at
mv
A)
(at
to
150 mv (at B). The temperature difference (30-10) is 20 C; the voltage difference (200 mv 150 mv) is 50 mv. The
variation in forward bias per degree centigrade is calculated as follows
this
mv/
mv/ C
for de-
creasing temperature.
may employ
a variety
of circuit elements
a.
Common
The
effec-
and voltage
and Sv respec-
25
b.
TEMPERATURE
figure
78.
c.
collector current
Section
II.
Breakdown diodes
d.
e.
circuit
shown
in A, figure 74.
Depending upon
(E,
b.
fig.
74)
This ratio indicates the effect on the emitchange in saturation current and
called the current stability factor (/!?/)
Mathe-
sistor.
ter current of a
is
matically,
it is
expressed as follows
S,=
Note.
in
a.
The
Circuits in
which
Rw
is
paragraph 79.
.Ah
is
a ratio of
Icbo,
4
>
<fbl+IcBO>| :r c
<le-fbte'-l C BO
^^
RE
Re
K F"
Sl
.-L/L + +
t'
lzfb
Sy-^RE+Rcd + 'fbSj)]
Rpa>
Figure
74.
and voltage
87
no swamping
(Re=0), and
resistor
resistance
is
R&I
\Rb
Rb /
Rf
To
c.
CB
derive the
Rg/\RB
minimize
Since
amplifier (B,
1 arb
is
74), re-
fig.
sistor
Re J
1_
Re
S.ot
=0, and
Rb
Rb
This expression indicates that the current stability of the CC amplifier depends upon the ratio
,-->:
H-JO >+o+
With an
!-/>
Rb
is
Again
it
resistance, the
and
The effect on collector current stability of various combinations of base and emitter resistance
resis-
CE
amplifier
fig.
To avoid reducing the results to an indeterminate value, multiply the numerator and denominator by Re before
value which cannot be interpreted.
S,=
-5-+D
Kb m*f
R = oo )
(
*S,=
Because a ft
is
r-ioi/8
The
assuming linear
occurs,
emitter resistance
(2)
RE
= 0)
and
is
from a purely
and 6(2)),
One method
bility in a
0,0,,
in figure 75.
is
Rb Rb
values
Emitter Resistance
and
1 a/
resistance
shown
in
The
plifier is similar to
am-
dition
88
paragraph
77c.
125
100
TM690-I04
TEMPERATURE "C
Figure
Graph of variation of
75.
and Rb-
Rb
Rt
The
o.
circuit
is
shown
volt-
in
Rc
As
a result, less
Rb/ \Rb
Since
1 afb
Rb )
Rr
s'=
(E,
a.
The
fig.
74)
ratio of
ife/Gb ib)'
and
(aIcbo)
is
rl
resistance
on the collector voltage of a change in saturation current and is called the voltage stability fac-
br~R7+W R'
tor in this circuit
m saturation current
is
tor
(St)-
ground-return resistance) to the emitter resistance. This formula again substantiates the statement that the lower the base ground-return resistance and the higher the emitter resistance, the
better the current stability (par. 74).
Mathematically
it
is
expressed
as
follows
Sy- AFc
A/cj
is
is
a ratio of
stability fac-
Under
89
C
TM690-I05
Figure
ideal
CE
76.
the
conditions,
voltage
stability
factor
would be equal to zero; in other words, the collector voltage would not be affected by a change
in the saturation current.
6.
By
fig.
Section
III.
is
fac-
Use
tor (Sv) equals the collector resistance (Ro)
of a transformer with a low-resistance primary in
81. General
It has been established that the bias current of
the transistor
if
74)
Sv
Note that
is
crease in temperature.
return). The base terminal voltage is developed across resistor Rl and is in the forward
bias direction. The second voltage divider applies a portion of battery Vc voltage to the emitter
terminal. The emitter terminal voltage is devel-
oped across
R2 and
resistor
The forward
direction.
is
applied to the emitter terminal, so that the resultant base-emitter bias is always in the forward
is
of the words thermal and resistor). The thermistor, as used in this chapter, has a negative
temperature coefficient of resistance; that is, its
resistance value decreases with an increase in temperature.
The
paragraphs 82 and
83.
consisting of resistors
R4
90
direction.
b.
With an
lector
The
increase in
is
thermistor
RT1.
As
R2 and
RT1
is
decreased,
the emitter
forward
is
bias.
reduced.
As
OUTPUT
TM690-I06
Figure
77.
and prevent
The
Limitations
and 78)
bias.
curve shows
the
variation
There
stabilized.
is
of
is
collector
thermistor-
improvement in the
stability
However, thermistor
equal to (does not track) the variation in emitterbase junction resistance (par. 745).
more current
to
INPUT
J Y
M 6t>.
TM690-IO7
Figure
78.
91
TEMPERATURE
Figure
79.
TM 690-
*C
IV.
85. General
Variation of collector current with temperature is caused by the variation with temperature
of the emitter-base junction resistance and the
saturation (reverse bias) current (par. 74). Variation with temperature of the resistance and the
reverse bias current of a PN junction occurs
whether the PN junction is part of a transistor or
part of a junction diode. The junction diode,
then like the transistor, can be used in bias stabilizing circuits. The main advantage of using the
Stabilization
a.
it
can be
This
condition permits a more constant collector current over a wide range of temperatures because
of better tracking (par. 84).
o.
coefficient of resistance
or reverse biased.
in
circuit shown in figure 80 employs forward-biased junction diode CR1 as a temperaturesensitive element to compensate for variations of
Consider the
emitter-base junction resistance.
a.
The
With
drop across
diode
CR1
resistor
is
rent.
S.
The
ac signal
is
Capacitor CI by-
load resistor
92
108
Section
is
125
100
25
R2
CR1. Collector
Ca-
OUTPUT
TM69O-I09
Figure SO.
Transistor amplifier using single forward-biased junction auxle for compensation of temperature variations of emitter-base junction resistance.
c.
The
BB of figure 82.
A A, for which
BB)
the collector.
87.
by
OUTPUT
Figure
S* I CB0 + I|
TM690-II0
SI.
93
SINGLE DIODE
STABILIZED
TM690-III
TEMPERATURE *C
Figure
82.
single-diode stabilized,
the opposing voltages across resistor #3 and junction diode CR1, assuming negligible resistance in
88. Reverse-Biased
Single-Diode Stabiliza-
tion
a.
The
shown
GR\
as a temperature-
current
The
94
current
(Icbo) flows
range of temperature.
b. As the temperature increases, Icbo increases.
However, the saturation current of diode OR1 increases by an equal amount, so that there is no
accumulation of Icbo current carriers in the base
region. Such an accumulation would cause an increase in emitter current (par. 74a)
Diode GR1
the input.
circuit
sistor
element.
(par.
43).
This
base-emitter
current
c.
Resistor R2
resistance,
746).
Resistor
#3
is
OUTPUT
TM690-1I2
Figure
85.
Transistor amplifier using single reverse-biased junction diode for compensation of temperature variations of saturation current.
Section
89. General
Certain currents and voltages of a temperaturemay be used to temperaturestabilize another transistor or several transistors.
stabilized transistor
Typical
circuit
use of high-valued resistor #1 (swamping resistor) in the emitter lead, and low dc resistance
in the base lead. This circuit is similar to the
circuit shown in A, figure 76 and discussed in para79a. Swamping resistor HI maintains a
relatively constant emitter current in transistor
graph
Ql-
90.
Common
Emitter-Base Voltage
circuit
<7C,fig.82).
Tl
e. In the circuit of figure 84, transformer
couples the ac signal input to the base-emitter
Battery V* supplies
circuit of transistor Ql.
Capacitor CI
is the emitter swamping resistor.
bypasses the ac signal around resistor Rl and
battery
E - Battery Vc supplies transistor Ql
collector voltage. Transformer T2 couples the ac
transistor Ql.
transistor
b.
Battery
Q% is a PNP type
Ql is temperature-stabilized by
Transistor
95
A-?\
Tl
NPUT
\j
)\
T2
rir^
-
OUTPUT
^Rl
ciip:
-vc
+ -v E
Figure 84.
Common
91.
in a
emitter of transistor
Q2
Ql and
the
at ac zero poten-
Emitter-Collector Current
emitter bias.
transistor is
R2.
Capacitor C3 places
tial.
(2)
resistor
amplifier.
by the
GE
(Q2)
Rl
Resistor
by use of swamping
is selected
so that
Resistor
R2
is
the emitter
its
(3)
74a).
Ql by
collector of transistor
lector of transistor
Ql
of tran-
the collector
load resistor and develops the output signal.
Battery
c provides voltage for
base bias.
emitter-
is
The current of this circuit is indicated by the arrows. Electrons that flow into
the emitter lead of transistor Ql flow through
Resistor /?4
both transistors.
transistor Q2.
The
follows
(1)
96
The
currents.
d.
transistor Q2.
circuit operates as follows:
Transistor Ql is used in a OB amplifier;
its stability factor is ideal (par. 77c).
However, some variation of its collector
current does occur with temperature vari-
in
(1)
OUTPUT
TM690-1 14
Figure 85.
Circuit using
common
in two transistors.
transistor Q2.
of resistors
indi-
and
no
The
interest
Q%
cated.
collector current,
base-emitter bias is
the
across resistor
The
sum
arrow.
collector
temperature.
d.
In this
swamping
circuit, resistor
resistor.
bias voltage.
Battery
Battery
Vc
Rl
VE
is
the emitter
supplies emitter
is
the col-
OUTPUT
TM690-II5
Figure
86.
97
Section VI.
VOLTAGE STABILIZATION
93. General
In paragraph
a.
(SV)
equation
factor
factor will
breakdown,
is
that of
who
the scientist
is
which
or Zener, voltage.
is
similar to that of
some
gas-filled
saturation current.
almost fixed.
b.
b. As in the case of the gas-filled tube, the breakdown diode can be used as a voltage regulator ( B,
fig.
87).
94.
(1)
/2)
a.
graph of the current through and the
voltage across a reverse-biased junction diode is
shown in A, figure 87. Note that at a certain
the source (E ls )
increased current for the load
is
diverted
.BREAKDOWN
VOLTAGE
Vz
(EIS ) remains constant, so that the voltage output (Eovt) again remains con-
-OUT-
stant.
(2)
increases.
sistor
(Em ) increases,
drawn from the source
Rl
increases
/l increases by the
IT
rein-
and current
amount of
increase in
-"
c.
is
B
TM690-II6
Figure
87.
characteristics
98
breakdown
di-
ode, the
95.
It was stated (par. 856), that the reversebiased junction diode has a negative temperature
coefficient of resistance. This statement is true if
a.
breakdown voltage
87).
(fig.
The breakdown
diode has a positive temperature coefficient of resistance several times larger than the negative temperature coefficient of resistance of the forwardor reverse-biased junction diode.
b. The discussion in paragraph 94 concerning
the voltage regulator ( B, fig. 87) applies only if the
temperature of the breakdown diode does not vary
under operating conditions. One method of compensating for the increasing or decreasing
breakdown diode resistance with increasing or decreasing temperature, respectively, is to place elements of negative temperature-coefficient in series
with the breakdown diode. Figure 88 shows a
circuit with two forward-biased diodes (CR1 and
CR2) in series with the breakdown diode (CR3).
The total resistance of the three diodes in series
remains constant over a wide range of temperatures.
The complete result is a constant voltage
output although temperature, input voltage (Em) ,
and load-current drain may vary.
c. Two diodes are used in this circuit because
the temperature-coefficient of resistance of each is
Forwardhalf that of the breakdown diode.
biased diodes are used because of the very low
voltage drop across them. Thermistors, or other
temperature-sensitive elements, can also be used.
TM690-II7
Figure
88.
down diode CR 1
this
95.
c. The ac resistance of a breakdown diode may
vary from 5 ohms to 1,000 ohms depending on the
particular diode. To avoid shunting collector
load resistor R 2 by the low ac resistance of diode
OR\, a high impedance choke coil (LI) is placed
in series with the diode.
d.
Transformer
7'1
base-emitter circuit.
a. The circuit shown in figure 89 uses a breakdown diode (CR1) to stabilize the collector volt-
age.
Note that the current (72) drawn from the
battery divides into breakdown diode current (71)
and collector current (7 ) When the dc collector
OUTPUT
same amount,
drop across
remains constant.
The
TM690-II8
Figure
89.
in an amplifier to
99
swamping
resistor.
T2 blocks the
Rl and battery TV
collector dc voltage
Capacfrom and
curs
emitter circuit
is
may
The
field
it.
To
Summary
98.
a.
at
72),
current (/).
b. Emitter-base
to
is
expressed
S,=
forestall the
(fig.
The current
d.
Mb
Mc.
of external resistance
is
expressed
/>
S,=
B
The voltage
e.
Rr
Rb
(AFc)
to
(A/pBo) and
expressed:
Tl
transformer
is
secondary.
junction diode
and conduct.
CR1
When
will
become forward-biased
diode
CR1
The expression
/.
74)
(fig.
conducts, only a
it
and the
Sv =
volt-
This action
is:
- IS,RE + Rc ( 1 + a
input
J y
'
i.
1?"
100
from
to
prevent base-emitter
reverse-biasing.
this cause.
The
best
90.
by variations in
due to
Figure
^r c
vSi )
g.
emitter
ance.
basic
CB
amplifier (B,
fig.
swamping
resistor
74) exhibits
it
uses
an
resist-
j.
The
basic
CE
amplifier (C,
fig.
The temperature
amplifier (D,
fig.
it
74) exhibits
uses a base
resistance.
74) depends
upon the
CC
ratio of
(A,
fig.
76).
fig.
76).
rise in
tem-
perature.
a positive tempera-
(fig.
88).
101
CHAPTER 6
TRANSISTOR ANALYSIS
I.
TRANSISTOR ANALYSIS
(3)
99. General
(5)
c.
Loadline.
When
total collector
voltage
collector
(Fob).
(one point of loadline) then is
at the 10-volt mark on the horizontal axis.
(2) When the voltage on the collector is zero,
the total collector-supply voltage (10
volts) is dropped across load resistor R2
the
equals
Point
(1,500 ohms).
ratio.
d.
(par. 100).
The
500 ohms.
tion
CHARACTERISTIC CURVES
The
effect of collector
then
The
total current
(/ c )
is
10 V
103.
=0.0066 ampere
100. Output Characteristic Curves, Calculation of
=
Point
(B,
fig.
91).
The output
characteristic
fier is
102
is
1,500 ohms.
For
TM
e.
the ampli-
as follows
curves plot the collector current against the collector voltage with the base current as the fixed
value.
ma
amplifier (A,
curves
6.6
Gain
The op-
10
INPUT
/current
IS
COLLECTOR VOLTAGE V CE
TM690-I20
Figure
91.
(M,N,&n&X).
(3)
N,midX).
The horizontal
erating
103
Current Gain.
d.
figuration
is
(1)
G=AA<
Ai
G= 130X400
~M
(2)
G=52,000
7c(max) Zc(min)
IB (max) IB (min)
~~
known
Substitute
3)
increased 52,000
is
times in going through the transistor.
The power gain in db is
ma 2.1 ma
4.7
35 jua 15
G=10
= 10X4.7
2.6 ma
=47 db
20 Ma
2.6
0.02
ma
ma
The
current
is
AVC
A,-
(2)
"AV
Solve for
&VB e- The
voltage
is
teristic
= 130
e.
log 52,000
jua
change in input
line are
static char-
low)
ohms)
In figure
92, the
=20
mo X 500
= 0.00002
ohms
=0.01 volt
(3)
Substitute
known
((1) above).
A.=
6.7-2.7
0.01
4
0.01
=400
/.
104
its left.
is
drawn
on the transfer
static characteristics.
The two
families of curves have three attributes in common a common-collector current axis, like values
To
COLLECTOR VOLTS
10 V
2.5 V
OVNAMIC
TRANSFER
CHARACTERISTIC
BASE CURRENT
COLLECTOR VOLTS V CE
(MICROAMPERES)
TMS90-I2I
Figure
92.
Construction of dynamic transfer characteristic curve from output static characteristic curves with
loadline
(1)
Note.
acteristic curves.
(3)
Connect points
through
Z1
sequen-
dynamic transfer
characteristic curve.
(4)
teristics
characare ob-
tained with collector voltage held constant and the output ac short circuited.
The
is a static condition.
voltage of the dynamic transfer characteristic curve is not shown as a constant
value since the collector voltage now
This
collector
transfer characteristic
is equivalent to that
tube.
For
details,
refer to
TM
The dynamic
b.
Dynamic Transfer
nal Analysis.
(1)
resistor.
105
change
in collector
current.
Class
(4)
operation.
distortion in class
fiers is
operation of ampli-
covered in chapter
7.
transistor has
it
maximum
collector
To
maximum
collector
Figure
93.
Dynamic
showing linear
overdriving the transistor and the amplified output signal will be distorted.
operating point (fig. 95).
(3) Improper
When the improper operating point is
established, the change of base current
will automatically cause the linear portion of the
Figure
95.
Dynamic
BASE CURRENT
(UA)
power dissipation
power rating and a
istic
the
line,
set of
mw
To construct the
Figure
94.
Dynamic transfer
characteristic curve
showing overdriving.
106
constant
follows
power
dissipation
line,
proceed
as
(1)
CONSTANT POWER
DISSIPATION LINE
P=EI
Rearrange the formula
(2)
'-5
mw for power in the formula, and select arbitrary values of voltage to find corresponding values of cur-
(3) Substitute 18
rent.
For
instance,
assume 15 volts
is
selected.
18 row
~~
15
= 1.2 ma
Continue this procedure until a
number of points
is
sufficient
obtained.
Typical
COLLECTOR VOLTAGE V c
TM690-I25
(volts)
(ma)
/
(volts)
(ma)
Figure
Output
96.
1.2
1.5
2.0
3.0
12
9
6
4.5
6.0
9.0
3
2
The increase
(1)
When connected,
the resultant curve represents the constant power dissipation line.
characteristic curves.
An
(2)
This
is
im-
3)
is
values.
increased,
maximum
power dissipation
is
which flows
collector
(VCB )
lower capacitance
These voltage and current points are located and marked on the output static
sistor
in
in the
with
line.
may
result in oscilla-
(4)
pacitance
to
collector-base ca-
2 f for
high-frequency transistors, to 50/i/if for
low-frequency (audio) transistors.
b.
The
(C,-,,)
by the
PN
junction, nor-
107
mally
is
lector-base capacitance
ter current
(1)
and
The
IMA)
90
60
<I E
is
utilized
to
volt-
frequency modulate
30
(2)
IS
is
A.
Cce
60
-ne
u
g
<
o
B.
EMITTER CURRENT
IE
(MA)
TM690-I27
TM690-I26
Figure
Section
II.
sistances
or
the
Resistance.
Fig-
108
b.
98.
load resistance Rl is increased. Unlike the electron tube amplifier, the transistor amplifier input
resistance depends
resistor.
c. Generator Resistance and Output Resistance.
Figure 101 shows a comparison of generator resistance R g to the output resistance r for the common-
base,
figurations.
Output resistance
increases
as
generator resistance R, increases for the commonbase and common-collector configurations. Out-
Rg increases.
COMMON -BASE
I00K
TM690-I28
Figure
Medium power
99.
50K
COMMON -EMITTER
2 OK
sistor as
I0K
resistance.
100
a.
General.
The
COMMON -COLLECTOR
1
medium-power
20K
I0K
transistors are
c, d. and e
This information will help the reader to
I00K
SOOK
200K
II
TM690-I30
given in b below.
Charts that plot voltage, current, and power gain for each configuration of a
SOK
Figure
101.
below.
5M
page lists typical values of input resistance, output resistance, current gain, voltage gain, and
&
><
ijr
&
configurations.
Common-Base
20K
I0X
SK
c0tl
IK
a ce'** 9
B IE
10
20
50
100 200
500
IK
2K
_**'*"
SOOK
200K
LOAD RESISTANCE
R.
-OHMS
--
IM
..
VOLTAGE AMPLIFICATION
CURRENT AMPLIFICATION
Figure 100.
Variation
of
input
resistance
tcith
load
Fig'ure 102.
109
Output resistance
__
CC amplifier
CE amplifier
CB ampllfler
Item
2K-500K ohms.
ohms
30-150 ohms
500-1,500
300K-500K
30K-50K
50-1,000 ohms.
500-1,500. ._
300-1,000
Less than
25-50
25-50.
25-40 db
10-20 db.
1.
20-30 db.._
creased.
The power gain (G) is the ratio of the output signal power to the input signal power expressed in
db. The current gain, the voltage gain, and the
power gain are plotted against the load resistance.
The current gain (At) is always less than
one and decreases as the load resistance is in-
ohms.
1500
(A,.)
is
50
75
Av
ID
a
IOOO
40
50
G
<
o
a.
in
o
Q.
500
30
25
O
o
o
o
8.
o
o
o
o
o
o
q,
o
8
o
o
o
20
8
o
o
N
TM690-I32
A;
Figure 10S.
no
increased.
sistance
increased.
is
(G) occurs when the load resistance is approximately 40,000 ohms. Note that current, voltage,
and power gain for this configuration may exceed
Summary
106.
a.
The
current, voltage,
unity.
collector-supply voltage
is
((f)
occurs
when
the
The
resistance.
Ai
'An
maximum
"<a
sistor.
/.
O
l
>
'
The interelement
by the
PN
transistor.
LOAD RESISTANCE (OHMS)
>
*
VOLTAGE AMPLIFICATION
CURRENT AMPLIFICATION
Figure 104.
Ill
CHAPTER 7
AUDIO AMPLIFIERS
Section
I.
INTRODUCTION
(1)
107. General
a.
Audio
measured
in
milliwatts.
since
low power
in
when the
efficiency.
Also,
(/&)
is
appreciably reduced.
(3) Class B audio amplifiers must be operated in push-pull to avoid severe signal
AB,
class
Power
voltage.
watts.
sistor amplifiers
efficiency.
Power
power
When
As
during
power
When
distortion.
AB
amplifiers can be
AB. Class
biased so that either the collector current or the
collector voltage is zero for less than a half cycle
e.
Class
The statements
AB
amplifier.
even when no signal is present. Audio, amplifiers, operated class A, may be used in single-
input signal.
112
or
for zero
d.
Class C.
Class
The
class
amplifier, either in
it
Section
II.
PREAMPLIFIERS
109. General
a.
(par. Ill),
(pars. 112,
<
o
The
General.
to
its
determined by
measuring the ratio of signal-to-noise power (S /AT,)
at the input of the amplifier and the ratio of signalto-noise power (So/N,,) at the output of the amplifig.)*.
is
.5
.3
fier.
The
noise factor
is
by the output
COLLECTOR VOLTAGE,
10
(VOLTS)
TM690-I36
illustration
noise ratio
SJN,
SJN.
F
"
of this ratio
(F ) the better
The noise fac-
d.
Signal Frequency.
an amplifier with a given transistor is affected mainly by the operating point (b below),
the resistance of the signal source (o below)., and
increased.
cycles
tor of
below)
Note.
The logarithm
is
is
Operating Point.
is
rent
and the
collector
The
voltage.
and
is
shown
in figure 105.
collector
either the
The curves
in-
more rapidly
Low Input
to be fed
a.
of
effect
The curve
in the
tion
may
Resistance.
If a preamplifier
CB
configuration or the
be used.
The
CB
is
CE
is
source,
configura-
configuration has an
normally between 30
it
30
25
m
a
20
O
U
<
15
^^
S
z
10,000
1000
00
fig.
CC
configuration.
The input
(RL ) of 500 ohms is used, the input resistance of a typical transistor will be
resistance
CC configuration is high
(fig 100)
because of the large negative voltage
feedback in the base-emitter circuit (A.
As the input voltage rises, the
fig. 108)
the
tor
RL
resis-
By
1-
"
(2)
CE
sistance,
.SI
10
SO
100
FREQUENCY (KC/SEC)
TM690-ISB
Figure 107.
114
that
The
10
5
.IK
is
20
I
u
<n
The disadvantage of
configuration, however,
40
a
o
e
a
o
CC
By Ohm's
108).
to the
TM690-I37
CE
CE
figuration
is
equal to the
CE
configura-
CE
configuration
is
swamping
and helps to
resistor
112. Two-Stage
fier,
Preampli-
a. Figure 109 shows a typical two-stage, directcoupled preamplifier. The circuit is designed to
compensate for the poor low-freqnency output of
the transducer, microphone Ml.
(1) By directly coupling the transistor Ql
output to the transistor Q2 input, use
of a coupling capacitor is avoided.
coupling capacitor would attenuate the
Rl
r
Direct-Coupled
Low-Frequency Compensation
in*
low frequencies.
C2 and
(2) Capacitor
low-pass
partially
OUTPUT
ated).
r
in*
filter.
resistor
The high
K3 form
frequencies are
shunted to ground
Note that transistor
(attenu-
Q2
is
"E
TM690-I39
Figure 108. Three amplifier dreuit arrangement* for
producing a high input resistance.
tively
is sufficient to
fig.
across this resistor opposes the input sigAs in the case of the CC
configuration ((1) above), this negative
nal voltage.
b.
The
collector voltage
Ql
of transistor
Transformer Tl couples the output of microMl to the base of transistor Ql. Tran-
phone
sistor
Ql
emitter swamping
resistor.
Resistor
Rl
is
the
Capacitor CI by-
Collector
load resistor
Resistor
R5
is
R4
R2
the emitter
115
Ql
ov/p*\-
Ik
VJ>|
02
+IV
+ IV
.01
-5.26
MA-
y..-
'"""
V3| +
-.IV
.20MA|
:r2
25K
Lc2
7 X .2UF
.5MA
I.25V
R4
:r6
IK
'
1,500
Tl
OUT
t^JIL
in
UxCI
R3
'IK
;:r5
<29K
-T-40UF
f^40UF
--6V
+
i
Figure 109.
C3 bypasses
8,500
-1-C3
--6V
i
'
TM690- 140
Typical ttco-stage direct-coupled preamplifier, providing low-frequency
compensation for transducer.
ohms.
/f)
a.
Low-Frequency Compensation
The preamplifier shown
General.
designed to compensate for the poor lowfrequency output of a transducer. This is done
by using two low-pass (high-frequency attenuating) networks. The first network (capacitor C3
and resistor E4) shunts the input of transistor
Q2; the second network (capacitor C6 and resistor R8) shunts the input of transistor Q3.
Transistors Q2 and Q3 are used in CE configurations; the input of each is approximately 1,000
110
is
Figure 110.
116
C2 and
(capacitor
re-
Circuit Description.
(1)
The
stage (transistor
first
Ql)
is
a de-
generated
CE
feedback
is
configuration.
Negative
approximately 55,000
ohms to accommodate a high-impedance
transducer. Resistor R2 with resistor Rl
input impedance
swamps
ance.
capacitor
C2
frequencies.
(2)
is
Resistor
R6
is
swamping
the emitter
re-
C4
Capacitor
sistor.
Dc
around
is
blocking capacitor
C5 permits
sistor
RC-Coupled Preamplifier,
High-Frequency Compensation
114. Two-Stage,
is
The
the ac
for transistor Ql. Collector load resistor R2 develops the output signal of transistor Ql. Ca-
stage.
C6 and
resistor
high-frequency attenuator.
R8 form a
R9
RIO
is
the emitter
Capacitor
Resistor
swamping
C7 bypasses
Resistor
resistor.
ac
signal.
signal
if,
*?
equalizer network (in dashed lines) attenulow frequencies more than it does the
ates the
(3) Capacitor
resistor RIO.
Rll develops
Cl
JL
Figure lit.
117
Section
III.
115. General
Signal coupling between one transistor stage
and another is accomplished with RC networks
(A, fig. 112), transformers (B, fig. 112), impedance coupling networks (C, fig. 112), and
The advantages,
direct coupling (D, fig. 112).
The
current, voltage,
stages
At
is
power
are usually
to dc
of the RC-coupled
amplifier is low.
(2)
disadvantages, frequency response, and applications of these methods of interstage coupling are
transistor
power output
delivered to stage)
a.
kept small.
The
(3)
RC
The
second stage.
The upper
is
limit of the
dictated by dc
tions
(ch. 5).
H(OUTPUT
INPUT
!'
iCrr
-7tt+T
j
D
TM690-I43
Figure 112.
11B
RC
Use
equipment
is
up to high-level
of
RC
amplifiers for
power
power opera-
low-frequency response to fall off. At high frequencies the response is reduced by the collector
capacitance, and the leakage reactance between
primary and secondary windings.
response
/. In addition to the poor frequency
more expensive,
compared to resistors
and capacitors required for coupling. Use of
(c
above),
heavier,
transformers
and larger in
are
size
loss is eliminated.
of the impedance-coupled
than that of the transformer-
dc return path.
RC-coupled amplifier.
b.
power
former-coupled amplifier approaches the theoretical maximum of 50 percent. For this reason,
the transformer-coupled amplifier is used extensively in portable
is used.
maximum
amplifier
is better
119. Direct-Coupled
Amplifier
b.
connected directly to a
PNP
NPN
transistor
transistor.
The
is
di-
that can be directly coupled is limited. Temperature variation of the bias current in one stage is
amplified by all the stages, causing severe tem-
perature instability.
119
and
Compared
Transistor
Volume
a.
considered a constant- voltage source and the volume control is considered a voltage divider. In the
case of an electron tube (A, fig. 113), the source
is
T1
(tube
plate)
impedance
is
most
draws no
cur-
rent.
of variable resistor
R2
By
arm
imum
(tube
VI output
voltage e=t)
is
VI
transistor
Q1
base-emitter circuit.
gible
input current
i tn
when the
variable
i is
equal to
arm
is
gain.
tion,
(i
=o)
Q2.
121.
Volume
Control Requirements
a. Noise.
Volume controls should be so arranged in a given circuit that the volume control
introduces no noise or a
noise.
minimum amount
V2
""
A\
e
J
:_
in
>
n
i
)
i
CI
R2
B
TM690-I65
120
of
'"
Volume
enters tran-
sistor
-It-
Figure 118.
in the
upper position.
In
CI
\(
\\
fig.
(transistor Q\ collector) impedance is high compared to the load (transistor Q2 base-emitter) impedance. In this case the volume control (B2) is
Unlike the electron tube (a
a current divider.
above) the input circuit of the transistor normally
to zero
(ein=0) respectively.
o. Current Divider.
If the source impedance
is high compared to the load impedance, the source
is considered a constant-current source and the vol-
control
The designation
is
ume
from zero
to
maximum
Examples of
several
Volume
Control Circuits
volume control
circuits not
the collector load and the volume control is unsatisfactory. The heavy dc collector current flowing
Use of variable
R2
resistor
resistor
R2
arm
voltage.
(2)
effective in
voltage.
resistor
as
and
shown
is
is
below.
(1)
be reduced to zero.
The
(1) Unless the variable resistor is made infinite in value, the amplifier gain cannot
(2)
The
more
(par. 122).
122. Unsatisfactory
(3)
The base bias voltage is that voltage developed across resistor R3. This voltage
will vary from a maximum to zero depending on the position of the variable
arm on variable resistor R2. The voltage
resistor
(3)
noise.
will vary
Q2
as negligibly small.
With
R2 can
be considered as shunting emitter swamping resistor R5. With all of the resistance of variable resistor
circuit, capacitor
C2
R2
in the
effectively bypasses
121
Q2
01
02
R2
;:
R4
-wv-
en
rii
ii
1-
"T~l
rs;:
;kc*
>
TM690-I44
Figure 114.
shown
capacitor for the low frequencies, causing greater degeneration of the low
frequencies compared to the high frequencies.
123. Satisfactory
a.
large
Volume
number
(1)
trol circuits
can be designed.
use T, L, or
isfactory
Control Circuit
These
attenuating pads.
volume control
can
circuits
sistor
typical sat-
(1)).
is also
circuit is discussed in
The
R2 from
The
resistor
R3
(par. 122d
b below.
6.
circuit
unsatisfactory
shown
(par. 122rf(2)).
conditions
found in the
circuit
(2)
By
02
Ql
C3
CI
if
\\
P)
\(
\\
I
'
(
\
/
\
INPUT
:ri
HZ
y
:r6
;R3
=~~l
OUTPUT
\
:rs
>
nC2
TM690-I4S
Figure 115.
122
resistor
R2
R5 and
R2 does
Volume
124.
Controls in Transformer
Coupling
a.
Volume
(par. 122rf(3)).
in reflected impedance
is
change
Such a large
avoided.
02
01
j
\
W
IP N
vbv'
V 2
Tl
INPUT
<
>
Rl;
>
OUTPUT
1
c
TM690-I46
Figure 116.
Volume
123
from the
secondary circuit (usually the base-emitter circuit) is equal to the secondary impedance multiplied by the square of the turns ratio of the
transformer. A small variation in the secondary
circuit impedance can cause a very large variation
in the primary circuit impedance.
b.
An
is
Variable resistor Rl is
value, usually 1,000 ohms, to minimize impedance variations. Transistor Q2 input
At zero volume,
is made less than 1,000 ohms.
the secondary load impedance consists only of
variable resistor Rl, 1,000 ohms. At full volume,
shown in A,
made low in
Rl
Q2
input
Section
IV.
in C, figure
dual varia-
(Rl and R2), the secondary impedance can be maintained constant at all volume
ble
resistors
control settings.
Rl
As
arm
is
of variable resistor
R2 move
to the right
(in the
resistor
Rl moves
up.
a.
Tone
The
dividers.
may
be used as current
Any
C2 and
In the
CI and C2 and
resistor
R3 form
a high-
By
resistor
be achieved.
126. General
124
figure 116.
d.
116.
better frequency
may
lector output
Q2 and Q3).
Ql
(transistors
(1)
Transistor
current
output
Resistors
Resistor
R2
Rl
When
below).
flows
output current (/) increases. The increased output current causes the top
impedance of transistor Q\
The
shown in
b.
is
similar to that
#4 (fig. 118) overcomes the unbalanced output impedance (a(3) above). The
functions of the parts in this circuit are the same
as the correspondingly referenced parts in the
unbalanced circuit (a above).
dition of resistor
The
(1)
values of resistors
R2 and R4
are
side of resistor
RZ
to
tive
The
Q2
is
The
(2)
R4
R2
c. Because of the large negative feedback voltage developed across resistor R2, a large signal
input is required to drive the one-stage phase
is
inverter.
phase inverter.
This advantage
is
important
if
amount of
push-pull power output
power
to a high-level
stage.
CI
Ql
T
ts
>RI
R3
CZ
INPUT
R2
TM690- 147
Figure
lit.
125
TM690-I48
Figure 118.
and CB
Q3
going
R4
Dc
going positive,
put signal of transistor Q2. Dc blocking capacitor C3 couples the output of transistor Q2 to the
base of transistor Q4.
b. Two signals reversed 180 in phase are obtained from the phase inverter. Assume that an
input signal causes the base of transistor Ql to
go negative. Because of the 180 phase reversal
of the signal in a CE configuration (ch. 3), the
top side of collector load resistor R4 goes posiThe same signal current that causes the
tive.
top side of resistor R4 to go positive, flows
through resistor R2 and causes the top side of
resistor
is
the emitter
Since there
CB
126
indicated would be
Although there
is
Q2
input circuit.
CE
Configurations
of transistor
R3
all polarities
reversed.
a.
The
CE
configurations.
is
identical with
the transistor
figuration,
goes positive.
tive
signal
transistor
capitor
The
Ql
collector
One
is
Q2 through
C2 and
dc blocking ca-
is
Rl
03
01
C!
v>)
02
vK
\_2 J
JR4
f\
INPUT
)\
Q]
R3
|R2
1
V>ft
;:rs
>
-)|
-.
vLci
04
vK
y^
C3
i
Figure 119.
CE and
TM690-I49
CB
develops
signal
Resistor
This negative
coupled through dc blocking
capacitor C5 to the other input circuit of
a push-pull output stage.
(2) Resistor Rl provides base bias for transistor Ql.
Collector load resistor R3
develops transistor Ql output signal.
is
Resistor
sistor
Cl.
R2
and
is
is
Resistor
transistor Q2.
the emitter
ac bypassed
R5
R6
sistor
configuration.
transistor
R7
and
is
is
Q2
output signal.
the emitter
swamping
re-
ac bypassed by capacitor
C3.
Since two identical CE configurations are
used, the source impedances are equal for the two
input circuits of the push-pull output stage. In
addition, the amount of power that can be delivered by the two-stage phase inverter is much
greater than that of the split-load phase inverter
b.
(par. 127).
TM690-I50
Figure 120.
CE
configurations.
127
Section V.
POWER
figure 122.
130. General
a.
power
minimum
distortion.
operation of class
class
amplifier.
The
In this circuit each transistor conducts on alternate half cycles of the input signal.
The output signal is combined in the secondary
of the output transformer. Maximum efficiency
is obtained even during idling (no input signal)
periods, because neither transistor conducts durzero biased.
b. An indication of the output current waveform for a given signal current input can be
obtained by considering the dynamic transfer
istic,
current
characteristics.
This characteris
shown in A,
is
The
current
is
up
lined
In C, figure
bias current.
This
distortion becomes
Low
Bias Amplifier
dynamic transfer
AMPLIFIERS
class
istic
study of the dynamic transfer charactercurve of the amplifier demonstrates the elim-
In A, figure 123,
current bias
conditions.
OUTPUT
is
ward
"With for-
transistor
TM690-I5I
Figure
121.
128
(solid lines)
The
are offset
Ill
(E
IE
3
o _
o
1o
2-
111
_l
-1
o
o
30
60
90
BASE CURRENT
(uo)
OUTPUT
COLLECTOR
CURRENT
c
TM690-I5Z
Figure 122.
Dynamic transfer
129
OUTPUT
COLLECTOR
CURRENT
c
TM690-I53
Figure 128.
The corresponding
130
R2
Assume
Ql
to conduct.
Electrons
hand plate of
*?
Eesistor Rl represents
to the left hand plate.
the output resistance of the previous amplifier.
The charging of capacitor Cl occurs rapidly, because of the low-resistance path. Capacitor Cl
cannot discharge through the transistor Ql emit-
R2
-o
resistor
* U^
^-o
RI+Wr-
-^
path
is
pacitor
B
TM690-IS4
shown by the dashed-line arrows. CaCl discharges slowly because it must dis-
Figure
12.}.
tion.
Ql
base-emitter junc-
resistor
E3
El.
class
The
EC
E6 does not result in a reverse bias because the battery current flowing in the opposite
direction maintains a forward bias.
resistor
a high-valued resistance
conduct.
push-
Ql
when
emitter-base junction to
the same, except that resistor E3 has been replaced by diode CE1 which is forward biased
small
131
CI
T^fc-r
Ql
R3
Rl
R5
-VWR6
3E
OUTPUT
"T
R2
Q2
C2
Ql
"If
CRI
Rl
R5
vwR6
R2
35
OUTPUT
CR2 it
02
C2
TM690-I55
Figure 125.
132
Section VI.
COMPLEMENTARY SYMMETRY
134. General
b.
The advantages
(1)
circuit
by the arrows.
of complementary symmetry
(2)
all
(indicated
by
ar-
When
referred to as a complementary
The theory
symmetry
is
circuit.
is
conventional class
dis-
push-pull amplifiers
(par. 132).
&
The
circuit.
PNP
transistor
and transistor Q2
is
an
NPN
negative going input signal forward biases transistor Ql and causes it to conduct.
positive going input signal forward
biases transistor Q2 and causes it to conduct. As
one -transistor conducts, the other is nonconducting, because the signal that forward biases one
transistor.
Ql is represented by variable
that of transistor Q2 by variable
circuit of transistor
resistor
Rl and
resistor R2.
(1)
With no input
signal
and
class
opera-
tion (zero emitter-base bias), the variable arms of the variable resistors can be
TM690-I69
Figure 126.
Dc
current flow in
transistors.
PNP
and
NPN
RL
As
the in-
Rl
nonconducting.
remains in the
Variable
OFF
re-
position.
133
-- VCCI
When
Current flows through battery VC a, variable resistor Rl, and load resistor R L in
the direction
shown by the
-i- VCC2
solid-line ar-
row, and produces a voltage across resistor R L with the polarity indicated.
operation, a forward bias is
(2) For class
applied to the two transistors (fig. 127),
so that collector current is not cut off at
any time. In the simplified circuit (fig.
128), the variable resistors will not be in
the OFF position at any time. Dc bias
current in the output circuit flows out of
the negative terminal of battery Vccz into
the positive terminal of battery Feci,
through variable resistor Rl, variable
resistor R2, and into the positive terminal
CI
r
\(
\\
if
vk^ >
vi./
- vC ci
+
l
Rl
i
J.
'
OFF
Figure
TM 690 -166
Simplified
128.
version
output
of
complementary symmetry
of
battery
through
No
Vcm-
resistor
RL
circuit
of
circuit.
current
Under
flows
these con-
ditions, the output circuit can be considered a balanced bridge, the arms of the
bridge consisting of resistors #1 and R2
and batteries Feci and Vca- When the
INPUT
I
(r /
\
- VCC2
+
Q2
TM690-I56
Figure 127.
134
circuit.
cated polarity.
In either
coil will
it
INPUT
Circuits
a. Figure 129 shows a common collector complementary symmetry circuit to which a small forward bias has been applied. This circuit is similar
shown in figure 127, except for the voltage divider consisting of resistors R2, Rl, and R3
connected in series across batteries V C a and Vcc?The voltage developed across resistor Rl, with the
indicated polarity, provides forward bias for each
transistor.
Resistor Rl is in series with the baseemitter junctions of the two transistors. Considering the dc resistance of the two junctions as
being equal to each other, the voltage drop across
each junction is half of that developed across resistor Rl.
Normally the value of resistor Rl is
very small, so that its unbalancing effect on the
input signal to transistor Q1 is negligible.
6. Figure 130 shows a common emitter complementary symmetry circuit with transformer input
and transformer output. The voltage divider conto that
TM690-I57
Figure 129. Forward biased common collector
complementary symmetry circuit.
sisting of resistors
ward
RZ and
tapped-secondary transformer
is
not required at
However, a split primary output transformer (T2) must be used; unlike conventional
the input.
31EZ
INPUT
OUTPUT
TM690-I58
Figure ISO.
Complementary symmetry
circuit
transformer coupling.
135
r
c. A, figure 131, shows one common emitter complementary symmetry stage (transistors QS and
(?4) being directly driven by another common
emitter complementary symmetry stage (transistors Ql and Q2). The input to transistors Ql
and Q2
is
from a single-ended
When
stage.
Ql
the
conducts
and transistor Q2 remains nonconducting. Because of 180 phase reversal in a common emitter
Ql goes
QZ to conduct and
QZ
ducts and
its collector
'EEI
Rl
-vw-
'EE2 -"
04
/c?^
1
QI
03
n
+
Rl
i
INPUT
^
ff
+"
s^ k
tk
04
B
TM690-I59
Figure 131.
136
con-
This causes
goes positive.
03
INPUT
When
Q2
transistor
Ql
negative.
QS
is positive
with respect to
its
base
Ql
Section VII.
d.
Fbe 2
is
resistance.
in a
Transistors
common
Q3 and Q4
graph
138.
The
variation
of
total
collector
138.
is
covered in para-
is
b.
match the
pro-
are connected
emitter configuration to
pound-connected transistors
and
Rl
COMPOUND-CONNECTED TRANSISTORS
137. General
a.
battery
Compound Connection
The dashed
aft,.
it is necessary to use a transistor having a highvalued short circuit forward current amplification
Most transistors have an a fb ranging
factor (a f t)
from 0.940 to 0.985 with the average value of 0.96.
Regardless of the average value of a fi this factor
Figure
will decrease as emitter current increases.
132 shows the variation of collector current (output) with emitter current (input) for a single
The ratio of collector current to
transistor.
.
oo
400
portion) as the emitter current increases. This indicates a reduction in the current amplification factor at high values of emitter current. This phenomenon is most pronounced in power amplifiers
that
c.
'
400
'
too
too
(fig.
133), the dropoff of collector current (or reduction in an,) at high emitter currents can be made
negligible.
200
Figure 132.
137
The computations
tion.
CB
configura-
(b below) will
show that
is
greater than
Assume
Q2)
is
sistor
is,
(1)
a ti
(transistor
Ql) or
aft,
Ql is designated IE
Since in the
crease
to tran-
of 0.9975.
(2)
current
transfer
sistor
Ql is as follows
Ic ,=a fb IB =0.Q5 IE
(2)
The
Ql
(3)
of transistor
Ql
is
the
is
better indicated
(ate)
By
factor.
I w =I-0.95 I*=0.05 IB
effectiveness of the
amplification
The
nection
ward
is
CB
This
(transistor
equal to
is
The
equal to 0.95.
(1)
tively.
To
compound connection
as follows
The base
current
of
.95 Ic
.03I ET
sistors.
The
is
total
output current
equal to the
sum of
collector current
transistor
Q2
((1)
(!) at
point
the transistor
above)
collector
.0475 I E
<
Ql
_l
((3)
.0029 I E
above) thus
s fb| >.95
<>fb2"<95
=0.95 Jg-l-0.0475 Ig
Figure 1SS.
=0.9975 IB
138
.99751.
and the
current
"
Q2
transistor
(4)
a ".9975
TM 690-160
tors
factors.
139.
Compound Connection
in
Complemen-
Symmetry
tary
plementary symmetry
TM690-I6I
Compound-connected transistors in
complementary symmetry circuit*.
Figure 1H.
circuit.
Section VIII.
BRIDGE CONNECTIONS
by a speaker voice
current through a speaker voice coil offIf a
sets the speaker coil and causes distortion.
conventional push-pull amplifier were used, the
The
is
coil.
shown
in
capacitors,
inductors,
transistors,
or
RL
sound energy.
cuit
across resistor
resistor Rt,.
Arrangement
Dc
batteries.
The bridge
resistor
The advantage
the transistors
draw no
B operation)
current, there
is
If
no com-
no dc current
139
Assume
current (class
operation).
(The
circuits re-
collector-emitter of transistor
collector of transistor Q4:
(1)
Assume
that
the
input signal
causes
point
to
respect to point B.
Figure 135.
(1)
Assume
point B.
through resistor
emitter-collector
BL
the transistor
Q4
140
TU690-I63
circuit
Ql and QS become
and draw
less
less
forward biased
The
current.
collector
rection indicated.
Q2
direction
main cut
(3)
RL
e.
As
resistor
(4)
Four
Transistors
RL
(fig.
137).
For
class
all
opera-
the tran-
Assume
verse bias).
QS and Q2
to go positive (re-
Transistors
Ql and Qi con-
is
five
is
in the
CC configuration.
To overcome
five
that discussed in b above only the method of driving the four transistors is different. The input
signal is connected to the bases of transistors Ql
portion of the output of transistor
and QS only.
Ql is coupled to the base of transistor Qi through
portion of the
current limiting resistor i?2.
output of transistor Q'S is coupled to the base of
transistor Q2 through current limiting resistor Rl.
;
(1)
The
RL
(fig.
with
This
A
A
circuit using four PNP transistors. The following discussion would apply if four NPN transistors were used, except that all voltage polarities
indicated would have to be reversed.
b. Basically the operation of this transistor
bridge circuit is similar to the operation of the
complementary symmetry bridge-connected circuit
Q\ and Qi conduct less current (class A) or remain cut off (class B).
The main disadvantage of this circuit
is
PNP
A)
Transistors
amplifiers, though
bridge-connected class
less efficient than bridge-connected class B amplifiers with respect to power consumption, afford
a.
(class
in the direction of
QS and
B) or conduct more
The direction of cur-
L is in the
direction of the dashed-line arrow. The
for-
fiers,
B).
heavily (class
to
(2) If the input signal causes point
become positive with respect to point B,
QS and
A) or re-
Transistors
current (class
(class
off
Q2 conduct
less
polarity indicated.
transistors
conduct
Assume
point
141
TM690-I68
Figure 1ST.
Bridge connection of four PNP transistors using separate input signals from
transformer to each transistor.
to go positive with
Transistor Q\ conducts (class B) or conducts more heavily
(class A).
portion of the output of
transistor Q\ is fed to the base of
transistor 04 so that it conducts (class B)
or conducts more heavily (class A)
The
resultant increase in current through
transistors Ql and Q<L flows through load
resistor
L in the direction of the solidline arrow, producing the voltage polar-
tors
respect to ground.
142
RL
Current flows
in the direction of
interchanged.
are
through resistor
The advantages of four-transistor bridge amplifiers (pars. 141 and 142) are as follows:
a. Dc current does not pass through the load.
This is important when direct coupling to a
speaker voice coil.
Furthermore the speaker
voice coil need not be center tapped.
b. The peak-to-peak output voltage is equal to
twice the supply voltage less the small voltage
drops in the conducting transistors. The maxi-
mum
0. A degenerated CE amplifier
high input impedance.
d. Interstage
coupling
may
(fig.
108) has a
use transformer,
and 120)
inverter
power
i.
PNP
TM690-I64
(fig.
transistors
The
its
mating transistor.
c.
and
it
amplifier
without
overheating
the
transistors.
144.
Summary
noise factor of an amplifier is the quotient of the signal-to-noise ratio at the input
of the amplifier divided by the signal-to-noise
a.
The
The higher
(figs.
Zero-biased,
Complementary symmetry
(fig.
127)
elim-
n.
bridge
amplifiers
using
signal voltage of
four
transistors
ap-
143
CHAPTER 8
TUNED AMPLIFIERS
Section
I.
COUPLING NETWORKS
a.
The
fiers
b.
Tuned
The
For any given resonant frequency, the prodL and C is a constant (A, fig. 139) At low
frequencies the product of L and O is large, and at
high frequencies, the product of L and O is small.
c. For practical purposes the frequency at resob.
145. General
uct of
TM
re-
The important
XL
= B-r
~x
Z
is total
circuit
(tank)
e. Q is a measure of the selectivity of a circuit
and varies inversely with the resistance in the cir-
cuit.
The lower
(A f )
is
of the circuit
Af
144
or,
Q=-f
a.
sistance)
resist-
1*JW
g.
(/,) is
3.
.-
XL
2-tTfL
I
Xc
-
2-FTfC
XL
Ic*- -^r
R
I
Z
xc
nCI
LI
L2
N2
Nl
N2
I
I
'T" c sp
I
^^ c p
up
4-c s
[\ 8
;;
Cspi
TM690-I70
Figure 139.
and
3.
is
and
points 2 and
*'.
mary of
145
in the
number of turns
If there
is
equal resistance r
147. Transistor
a.
shown
and input
A, figure 141.
In this circuit, capacitance T includes
transistor Ql output capacitance (par.
in
(1)
(<;)
TRANSISTOR
TRANSISTOR
01
COUPLING
02
OUTPUT
NETWORK
INPUT
Ni
c7 %
r o;
TRANSISTOR
TRANSISTOR
01
C0UPLINC
02
OUTPUT
NETWORK
INPUT
9'
I
ro
bo7t;
9
I
I
-l- r
40
TM690-I7I
Figure HO.
146
(i-s)
between terminals
141) can be
made
and 3 (B,
fig.
A, fig. 141)-
selecting the proper turns ratio of primary and secondary windings for trans-
,_8=100
LF
= 100X7.7
= 770 ph
former Tl.
LP
(2) If
this circuit is
/r-
2t\jLpOt
c,
i.
Application.
the coupling network of A, figure 141, in an intermediate frequency amplifier using two commonemitter configurations.
(1) The following data is available:
Resonant frequency /v=500 kc.
Frequency bandwidth A/= 10 kc.
Transistor
Q\ output
_ 13,100
100
= 131
r
resistance
QX output
capacitance
C=
1<W.
Transistor
Q2
input resistance
ppf
12,000 ohms.
Transistor
-'-ioo
Tl which
2 of transformer
n=700
in this case is
7.7 ph.
ohms.
Transistor
Q1
01
OUTPUT
cT 7
08
INPUT
in amplifier)
4
01
OUTPUT
calculated
in-
the inductance
01^3
75
02
INPUT
'
TM8S0-IT!
Figure HI-
147
ary windings (par. 148). Capacitance Or includes transistor Q\ output capacitance and transistor Q2 input capacitance referred to the primary. If i_3 designates the inductance from
terminal 1 to terminal 3 of transformer Tl, then
the resonant frequency (/>) of the circuit
(1)
f,=
The tap at terminal 2 is positioned to provide impedance matching between the transistors.
6.
If, in
Impedance matching of
The
total capacitance
tance Zl
is
circuit.
Coupling
becomes
(pars. 148
2xVIiO
in the sec-
ll
"t7 s
shown
02
INPUT
01
OUTPUT
J
J3
T2
b.
01
CI-
OUTPUT
'
;
4
2n/LWr
across induc-
C1+C2
the small
(0 T )
(CI) (02)
Ojr
a.
Ql
as follows
tween terminals
150. Capacitance
transistor
is
02
INPUT
coupling
is
capacitance
The theory
(1)
TM690-I73
Interstage network using autotrantformer
coupling with tuned primary winding.
Figure 142.
148
The
total capacitance
(0 T ) in the circuit
is:
CV=01-r-
(08) (CO
02+0,
tance
01
02
?'"'
OUTPUT
INPUT
7>Ci
Ot is
Cr =Cl+C2
In each case the resonant frequency
is
/,=;
2irVLlCr
(2)
To
(C T
de-
ure 144.
151. Interstage
Coupling,
Double-Tuned
Networks
General. The advantages
of double-tuned,
a.
interstage coupling networks (fig. 145) over single-tuned networks (pars. 148, 149, and 150) are
as follows
(1)
is flatter
within
( 3)
The drop in response is sharper immediately adjacent to the ends of the pass
Figure
m.
band.
Attenuation of frequencies not in the pass
band is higher.
2tt/L^C1
2tV. C%
Impedance matching
TM
is
obtained by prop-
(2)
ment of the
J>~
2xVIlCi
2*V2C3
matching is obtained by
properly selecting the ratio of the reactance of capacitor CI to the impedance
Impedance
Figure US.
split capacitor.
149
a
*~1
150
Ql
COUPLING
OUTPUT
NETWORK
rn
c
TM690-I77
Figure 146.
Section
II.
NEUTRALIZATION
153. General
a.
is
one which
transmits energy in one direction only. The transistor is not a unilateral device. In the derivation
of the equivalent circuit of the transistor (ch. 4),
it was shown that voltage variations in the output circuit cause voltage variations in the input
Specifically, the internal voltage feedto the input circuit from the output circuit
circuit.
back
RC
equalizer network.
To compensate
are attenuated
AND
by the
resistor.
UNILATERALIZATION
ternal feedback circuit cancels both the resistive and the reactive changes in the input circuit, the transistor amplifier is considered to
the amplifier.
1
54.
a.
Common-Base
A, figure
147,
Amplifier, Unilateralized
15T
1
1
Tl
INPUT
vCI
'
Figure 14T.
^"^
C2-
t J
1)
OUTPUT
The
may
152
At
cuit occurs.
more
current passes
may
cause oscillation.
oscillation, the
c. To overcome the possibility of
S1 and
external circuit (consisting of resistors
circuit
the
to
added
be
can
C
capacitor
)
and
x
RX2
(C,
fig.
(1)
147).
Kesistors
RS1
and
RS2
correspond to resistors
pacitor
resistor
CCB
RS2
and capacitor
r\ and rc and
S
ca-
respectively.
(2)
rent increases.
current passes through
capacitor
Ccb
Cs
through resistor
Rst
producing a
The
resistors r\ and
The
amplifier
is
considered
to be unilateralized.
Amplifier,
155. Common-Emitter
Emitter Degeneration
a.
Partial
Rm
and couples
battery dc voltage from resistor
a portion of the collector current (i c2 ) to the emitshorting
ter. Inductor LI, an rf choke, prevents ac
<73.
to ground of resistor Rsi through capacitor
b.
When
collector
shown.
resistance
is coupled to the base-spreading
through the collector-base junction capacitance
The voltage developed across
(par. 154&(1)).
the base-spreading resistance aids the incoming
rent
signal
and
To
RXl
and
resistor
resistor
cir-
Rm
R^.
is
OUTPUT
INPUT
TM 690- 79
1
Figure U8.
153
is
thus unilateral-
ized.
and
R<j 2
collector-base
junction
capacitance,
the
base-
Transformer
7*2
ward
Resistor
plifier
shorting of the base bias voltage by the transformer Tl secondary. Capacitor C2 bypasses the
The operation of
(B,
fig.
(1)
149).
INPUT
OUTPUT
TM690-I80
154
for-
strated
lateralization
Figure 149.
R\
Capacitor CI prevents
Common-emitter
arrangement
to
prevent oscillation.
E.
minals,
The
parts
shown
feedback
internal
Transistor detector
and
One method
is
shown
in
A, figure
150.
The
mon-emitter amplifier
is
shown
and
3.
In
is
in B, figure 150.
(age)
159.
The power
a. Dc Emitter Current Control.
gain of the common-emitter amplifier (A, fig.
151) is controlled by feeding the age voltage to
the base of the amplifier to vary the dc emitter
current.
(1)
may
(2)
sistor amplifier is to
mon-emitter amplifier
and points
neutralized.
cir-
and
Under
and
amplifier.
TM
control
Note.
considered to be
157. General
detectors, refer to
points
elements
III.
is
Section
amplifier
between points
of the transistor.
in dashed lines are the
respectively,
transistor
The
be varied directly.
When
the dc output of
155
rri
25
COMMON EMITTER
<
K
COMMON BASE
in
o
Q.
.05
.02
.01
12
.2
10
25
C }M HON B ASI
.05
.02
.2
.5
varied directly.
In the circuit shown, resistors Rl and
R4 form a voltage divider and establish
the no-signal negative (forward) bias on
the base. The age voltage from the sec-
cc MMON EH ITTI .R
.01
(2)
10
20
B
TM690-I8I
Figure ISO.
*r-
tor
selectivity ((?)
The power
6. Dc Collector Voltage Control.
gain of the common-emitter amplifier (B, fig. 151)
is controlled by feeding the age voltage to the base
of the amplifier to vary the dc emitter current
which in turn varies the dc collector voltage.
Variation of the dc collector voltage is accom156
Figure 151.
tive
bias
The gain
(par.
Uli).
plifier increases.
(3)
former
cuit
T2 primary.
7*1
is
directly proportioned
to the
magnitude of the
if carrier.
Ql
and
156).
d. Resistor
circuit.
I.
Capacitor
R3
C3 provides
tuned circuit to the emitter. Resistor R2, bypassed for 455 kc by capacitor C4, is the emitter
swamping
resistor.
~J_
NOTE:
UNLESS OTHERWISE INDICATED,
CAPACITANCES ARE IN UF,
RESISTANCES ARE IN OHMS.
TM690-I83
Figure
152.
Typical
if
and neutralizing
circuits.
157
160.
Summary
The
a.
fiers is
maximum
Impedance matching
e.
is
important for
gain.
is
achieved by selecting
fig.
d.
fig.
143).
in
values,
158
it is difficult
CHAPTER 9
WIDE-BAND AMPLIFIERS
161. General
a. A very important factor in certain applications of an amplifying device is its ability to
amplify a nonsinusoidal signal. Nonsinusoidal
signals, such as sawtooth signals in oscilloscope
sweep circuits, consist of a fundamental component and a large number of harmonics. To
provide an output signal that is an exact reproduction of the input signal, the amplifying device
must be capable of amplifying with uniform gain
all of the components (harmonics) of the sawtooth signal. This type of amplifying device is
referred to as a wide-band or video amplifier.
b. Television and radar circuits which amplify
gain from about one-tenth of the lowest pulserepetition frequency to about 10 times the highest
The frequency of
pulse-repetition frequency.
pulses occurring one-tenth second apart is 10 cps
and that of pulses 1 microsecond apart is 1 megaThe amplifying device must provide a
cycle.
rectangular waveforms (pulses) also require wideband amplifiers. Experiment has shown that
amplifiers for such pulses
NARROW- BAND
AMPLIFIER
l\l\
* HARMONICS *
OUTPUT
WAVE FORM
INPUT
WAVE FORM
WIDE-BAND
AMPLIFIER
- HARMONICS
NOT LOST
INPUT
WAVE FORM
Figure 15S.
and wide-band
amplifiers.
159
is
success-
Wide-band
slightly less.
ploy a modified
The modified
coupling circuit
d.
frequency
band amplification.
a.
The
Ci.
b.
The
is
limited by the
(9
UJ
<S
are
and
still
circuits
Two
of frequencies.
b. Figure 157 shows three types of compensa-
These
wider range
fiers
compensation.
60-
J
25-1
>
10
FREQUENCY (CPS)
A.TRANSFORMER COUPLING
100-
75-
a.
<
(9
ID
50-
:_i
The
25H
>
10
FREQUENCY (CPS)
B.
RC COUPLING
TM690-I85
160
(1)
by one-third, oneand one-seventh. Since the fundamental frequency and the low-frequency
respectively decreased
fifth,
OUTPUT
TM690-M6
Figure 155.
In
many electronic applications, a phase
amount of phase
A delay time of
distortion.
shift of 2
is
the
maximum
tolerable
a.
Shwnt Compensation.
is added in series
with load resistor R L This compensates for the
shunting effect of output impedance capacitance
Co and impedance capacitance d. The capacitive
reactance of output impedance capacitance C and
input impedance capacitance C ( shunt inductor
Li and load resistor R L Capacitor Co is practiSince
cally a short circuit at high frequencies.
inductor L x (in series with resistor RL and capaei-
tion (A,
shift.
fig.
157), inductor Zi
.
PHASE
SHIFT 45*
WIDE-BAND
AMPLIFIER
SECOND
HARMONIC
Figure 156.
161
C.
Figure 151.
A.
SHUNT COMPENSATION.
B.
SERIES COMPENSATION
SERIES-SHUNT COMPENSATION.
Wide-band
amplifier,
The impedance
Series Compensation.
For
series
compensa-
tion (B,
fig.
162
TM690-I88
and
approached, the series circuit approaches resonance. Thus, current flow through capacitor
increases as the frequency increases. The capacitive reactance of capacitor Co decreases the voltL as the frequency inage across load resistor
Since the current flow through capacitor
creases.
by
The time constant
limited
is
capacitor
minimized by adding a compensating filter in series with load resistor RL. The
compensating filter consists of resistor Rr and
low frequencies
is
capacitor Cf.
The
filter
load impedance at low frequencies and compensates for the phase shift produced by capacitor C c
and resistor g For high frequencies, capacitor
Thus, at high
frequencies, the collector load impedance consists
only of resistor RL. As the frequency decreases,
Cr
is
of capacitor C c (fig- 158) and resistor g are compensated for by the compensating filter (Rf and
The value of resistor F and capacitor CF
Cf)
determines the best low-frequency response and
most uniform time delay. The square wave input
(fig. 159) consists of the fundamental frequency
and the odd harmonics. With the value of resistor
RL (fig. 158) too small, low-frequency attenuation
results (A, fig. 159). With the value of resistor
RL (fig. 158) too great, too much low-frequency
gain (B, fig. 159) results. When the time constant
resistor
Wave
Characteristics
159).
(fig.
High- and
Compensation
168. Simultaneous
quency
effect
169.
1/
({*
(x^
vk
on the collector load impedance at high freThus, compensating filter RrCr has no
at high frequencies.
Summary
OUTPUT
b.
Wide-band
television, radar,
INPUT
Figure 158.
is
if
LI
Low-Fre-
(30 cps to 4
effect
167. Square
Rr
fig.
amplifiers
find
application
in
electronic ap-
plications.
-
'
'
>
c.
Wide-band
circuits
ing networks.
163
d. The high-frequency response is approximately uniform for all three types of high-frequency peaking circuits.
e. The high-frequency response gain is lowest
with shunt peaking.
OUTPUT WITH
LOW FREQUENCY
ATTENUATION
FUNDAMENTAL
FREQUENCY
PLUS
THIRD
HARMONIC
OUTPUT WITH
EXCESSIVE LOW
FREQUENCY GAIN
PLUS
FIFTH
HARMONIC
wwv
OUTPUT WITH
PHASE DISTORTION
EQUALS
/
SQUARE
WAVE
WIDE-BAND
AMPLIFIER
INPUT
<^\
OUTPUT WITH
PHASE DISTORTION
^v
OUTPUT WITH
UNIFORM GAIN
AND TIME DELAY
E
TM690-I90
Figure 159.
L2
4UH IOUF
JL, e
01
Q2
OUTPUT
TM690-I9I
Figure 160.
164
to 4
CHAPTER TO
OSCILLATORS
Section
I.
INTRODUCTION
170. General
a.
Regenerative
power with a
To
Feedback.
generate
ac
Oscillating Frequency
and Dc Power.
Be-
below)
d.
lator is determined
(1)
38 and
Stabilization of operating point
(pars.
made
Cur-
No phase reversal
between input and output.
(2) The common-emitter configuration has
moderate input and output impedances,
reducing the requirement for matching
with the feedback circuit. This configare greater than one.
exists
stability (par.
172).
mismatch in the
feedback network.
In the common-base configuration of the transistor, the input impedance
is low and the output impedance is high.
Cou-
183.
(2)
The
circuits.
(3)
matching the input and output impedances with the feedback circuit also exists
with this configuration ((1) above).
TRANSISTOR
p lood
Pout -*
AMPLIFIER
o
O
Current
Voltage gain is less
and power gains are greater than one.
No phase reversal exists between input
than one.
e.
and output.
Frequency Limitations.
(1) In general, the data sheet of a transistor
includes the cutoff frequency of the transistor in its high-frequency characteris-
This frequency
tics.
is
its
<-
TM 690- 300
Figure 161.
tained (A,
tions
amplifier is unity. That is, an input signal of a specific level, would appear in the
output of the transistor amplifier at the
same level (no loss or gain). Since
is
171.
Initial
and Sustained
a. Initial Oscillation.
Oscillation
(TM
11-662).
The
circuit
may
ini-
by using the
externally ex-
approaches
it.
Oscillations build
up
to a point
of the circuit.
166
where
dampens the
the oscilla-
the
resistance
oscillation.
present
Thus, to sus-
(2)
be
is,
oscillator circuit
may be
circuit,
therefore
Oscillation
that
162)
fig.
is
is
cps) value.
(2) Oscillators can operate efficiently above
the cutoff frequency and could operate up
to but not including the /ma* of the tranThe maximum frequency of the
sistor.
power gain
''feedback
TIME
A.
TIME
B.
Figure 162.
Waveforms showing
effects of sufficient
TM 690 -301
and
(3)
to the transistor,
and therefore
affect
sustained.
The power
is
power feedback.
That is, y e .dback less the loss in the network equals the p in and is 1 mw. Thus,
all values remain constant and oscillation
is
insufficient
power.
stability.
Frequency
(2)
instability caused
acteristics rather
by
transistor char-
is
is
usually chosen
so that the operation of the transistor circuit is over the linear portion of the transistor characteristic.
of the circuit falls into a nonlinear portion of the transistor characteristic be-
The
high-frequency oscillators,
the collector-to-emitter capacitance
becomes an important factor, the effect
103).
In
when
167
FEEDBACK
NETWORK
4-P
feedback
S~\
P
in
p out
load
OUTPUT
NETWORK
INPUT
NETWORK
II
TM690-302
Figure 168.
swamping capacitor
tions in voltage.
may
175).
(3)
The use
common
in
the
oscillating
frequency.
is
illustrated.
are shown.
In all circuits Illustrated, a PNP-type transistor
NPN transistors may be substituted in any of
the circuits, as long as the dc polarities are reversed.
Note.
Is
used.
The
similar.
is
(par. 170)
However, the relative transistor dc potentials required for normal functioning of the oscillator
not
circuit
b.
lator is
The
component arrangements and polarity applications in transistor oscillators. Each circuit provides amplification, regenerative feedback, and
inductance-capacitance tuning. Exact bias and
stabilization
of a
circuits in
In both
cases,
is
from
Since
collector to base in
phase
b.
shift.
The
circuits in
C and D,
tickler-coil oscillators.
In C, regenerative feed-
TTYV
[Q
He
-*h
^~~\
Wr
Hi'
r^h
H^
QJ
[^
H(rie
*t*
-^
169
In D, since the
feedback
is
from
The
shift is required.
collector
c.
winding
The
is
circuits in
and
transistorized versions of the Colpitts-type electron tube oscillator (par. 175). In E, the signal
in phase.
col-
The
circuits in
similar to those in
inductance
is
Section
LC
II.
circuits)
transistor os-
shown
in A, figure 165.
Dc
feedback
tively) are
shown
in B, figure 165.
when the
is
applied.
ration, etc.
The ampli-
feedback coupled from the collector circuit to the emitter circuit by the transformer windings (winding 3-4 to wind-
ing 1-2).
(2)
A point
for change
from
circuit,
which, in turn,
Tuned-Base
Oscillator
(fig.
is
The
166).
similar to the
In
this appli-
(F)
is
no longer
increase.
sistor
BE
is
The
comprise the
transistor amplifier. The collector shunt-fed arrangement prevents dc current flow through tickler
winding 1-2 of transformer Tl. Feedback is accomplished by the mutual inductance between the
The
transistor is saturated
(par. 2076
(3) ), and since no further change in collector current exists, feedback ceases and
emitter current
170
The time
ie
begins to
fall.
This
lines
(2)
Tl
the
connected
is
in
the
circuit.
At
that
i-tit
(3)
The output
signal
is
c.
.AA
RF
Capacitors CB
and Cb bypass ac around resistors B and Re, rethe emitter
is
swamping
resistor.
spectively.
illustrated,
circuit modification.
result in a circuit
cal
B
TM690- 303
oscillator
and
(1)
swamping
resistor
degeneration.
Bb and
prevents
power
moment
the dc
above)
Regeneration
applied (6(2)
accomplished by
is
is
(2)
winding 1-2.
Transformer winding 5-6 couples the
signal output to the load.
cuit
CI and C2
in paral-
171
C2
<=0
-3h
R C ;:
OUTPUT
-A/Wr-
v cc:=
t^Ce
rb
f4 J
I
Figure 166.
Tuned-oase
Clapp
impedance of the
Oscillator.
and capacitance C
transistor.
TM 690-304
oscillator.
pacitance
may
be
series combination.
made
Tl
?
^ vv
3!
0UTPUT
V CC
TM 690-305
Figure 161.
172
Tuned-collector oscillator.
This ca-
When
(1)
is
is
(2)
When
Figure 168.
eter variations.
and ground.
At the
dilations over a range of frequencies.
resonant frequency, the shunting impedance of
the
No
is
inverted,
and the
side of capacitor
is
in-
main-
tained.
The Hartley
oscillator
(figs.
is
The shunt-fed (a
(b below)
operationally similar.
They
oscillators
Hartley-type
greater
oscillator
power output,
is
are
differ primarily in
be-
which
mod-
provides
described in c below.
TM690-307
Figure 169.
173
a.
'CI
con-
sists
Since capacitor 01
may be tuned
through a range of frequencies. Capacitor 02 is a dc blocking capacitor. Ca-
C2
is
variable,
pacitor
emitter
(2)
the circuit
swamping
resistor Re.
The inductance
tained from the induced voltage in transformer winding 2-3, coupled through
capacitor
transistor.
By
o.
TM690-3IS
Figure 170.
in.
C2
CC
-\(r
-VW-- vcc
/"
OUTPUT
\*b
TM690-308
Figure 171.
174
Cc
to the
Capacitor C2
'
*f
wv
rff
TU690-309
Figure Tit.
T\
at ac
Pwh-PiiZl Oscillator
temperature chamber
a.
ground potential.
c.
(fig.
173).
The
oscil-
Push-pull operation of transistors Q x and Q 2 provides greater output than the single-ended transistor oscillator.
(1)
resistors
The
determined only
of the crystal.
Parallel capacitance CP represents the
electrostatic capacitance between the crysAbove the
tal electrodes (A, fig. 174).
tics
(2)
crystal
"F
-Wr-
is
part or
Tl
CI
is
cE
ance occurs at the series resonant frequency (ft). The highest impedance occurs at the parallel resonant frequency
of both curves are
(/ 2 ). The slopes
TM690- 310
Figure 11$.
steep, indicating a
high Q.
For most
175
mode of oscil-
may be used in an
The mode of opera-
tion
tal is connected.
b.
(fig.
176).
circuit
quency stability
Increased fre167.
obtained with the insertion of
of figure
is
ELECTRODES
*2
FREQUENCY
TM690-3I4
Figure 175.
A. QUARTZ
c provide the
B , Rf, and
base and collector bias. Emitter swamping resistor Re is ac bypassed by
Resistors
CRYSTAL
capacitor CE
(2)
7^. C P
B.
EQUIVALENT CIRCUIT
Figure 174.
its
,
u --- _
TM690-3I3
equivalent circuit.
176
Figure 176.
Co
RC
168).
(1)
-Wr-
vWe
"e
BE
Figure
m.
crystal oscillator,
emitter regeneration.
Colpitts-type
collector-
mon-emitter configuration with the feedback supplied from collector to base. The
resistances illustrated provide the proper
bias and stabilizing conditions for the
ring (A, fig. 170). The oscillating frequency of this circuit is determined not
only by the crystal but by the parallel
capacitance offered by capacitors CI and
Cm- These are normally made large to
swamp both the input and output capacitances of the transistor and make the
oscillations comparatively independent
of changes in transistor parameters.
Since the parallel capacitance of CI and
E affects the oscillator frequency, the
operation of the crystal is in the inductive
region of the impedance versus frequency
characteristic between the series and
parallel resonant frequencies (fig. 175).
(2) The circuit of figure 178 shows the com-
voltage divider for this circuit. Capacitor Cb is the emitter bypass capacitor.
In contrast to the circuit described in (1)
circuit.
Capacitors CI and
C2 form the
1) above,
itors
3 Yl
it.
OUTPUT
TM690-3IT
Figure 178.
177
Section
III.
RESISTANCE-CAPACITANCE
FEEDBACK OSCILLATORS
(RC)
shift.
The RC
inductance-capacitance network.
work determines the frequency of oscillation and
provides regenerative feedback between output
section is given in
and input
make
the
oscillation.
This
RC
(1)
(1)
collector
current,
phase shifted
180.
tive.
(2)
is
very nearly
That
is,
180 phase shift occurs at only one freAt other frequencies, the ca-
quency.
it,
by
tions.
The
mally
is fixed,
a variation in
This, however, is
is
developed
applied voltage.
With
minimum
of
RC
than 90.
Thus, at
provide the required 180 phase shift necessary for positive feedback. The value
of
178
(2)
by any random
when power is
of
applied.
The
resistance
specific
Section Analysis.
circuit, consisting
BC
of the
11-670.
shifting networks.
is
Current flow in a
TM
are comprised of
a.
accomplished by an RC
network consisting of three sections, each contributing a 60 phase shift at the frequency of
put to input.
Note.
net-
resistance is
This is so, since additional sections reduce the phase shift necessary for each
section and the loss for each section is
lowered as the phase shift is reduced.
It is therefore not uncommon to encounter a phase-shift oscillator which
back
Co
C2
C3
-\(r
-\(r
is
::,
"B
*E
i
<=E
J-
Figure 179.
Transistor
BC
TM690-3II
TM
phase-shift oscillator.
mined by capacitors
sistors #1 and Rm-
180)
quency (f r )
Another circuit which uses a resistance-capacitance network for the development of a sinusoidal
output
is
(71
and
<72
and
re-
The resonant
fre-
is
ing expression
fr
2tt1R1C1R bi C2
However,
/r
2rRlCl
When
provided for oscillation and degeneration is provided to obtain frequency stability and distortion-
Bridge Analysis.
(1)
reduced in value.
(2) Besides leaving the emitter resistors of
both stages unbypassed, providing negative feedback, additional negative feed-
CI and C2 may
less output.
a.
(4)
may be
transistor
Ql
is
is
gain of the amplifier and effectively returns the output voltage to what it had
been. Thus, additional amplitude stabilization is provided.
In cases where
this
a requirement, an ordinary
used in series with the emitter
stability is not
resistor is
electrode.
179
-\(r
:
;!"ci
"82
:;!
:^ T
:=: v cc
%m
i8fl.
and
b. Circuit Description.
The circuits of
B, figure 180, are identical. A, figure 180, is
arranged so that the feedback paths are easily
identified, while B of the figure is arranged so
that the frequency selective bridge components
are easily identified.
(1)
Both
same methods of
transistor
Ql.
swamping
180
resistor.
essary feedback (both positive and negative (a above) ). The output to the load
is
Section
IV.
An
oscillator circuit in
waveform
nonsinusoidal
is
as a relaxation oscillator.
is
(3)
RC
is
or
and blocking oscillator (par. 183) circuits generally use an RC time constant for determination of output waveform and frequency.
A form of multivibrator circuit, used primarily
to convert low voltage dc to high voltage ac for
rectification in dc to dc power supplies, is described in paragraph 182.
c. Multivibrators and blocking oscillators are
operation.
193) is
The
(2)
polarity
is
deter-
(PNP
NPN).
when a further
no further
(5)
forward
bias.
(6)
The
transistor used
A transistor is saturated
(par. 181)
reversed-biased.
mined by type of
(4)
waveforms.
transistor
with
more
negative)
generally classified
The
(L-s-B).
181. Multivibrators
The free-running
190a)
is
essentially
a nonsinusoidal two-stage
oscillator in
other
is
stage which
lating process
is
analogous to the
common
plate-coupled
181)
An
With PNP-
in a
is
a.
an increase in
collector
is
and 6 below.
General.
The
181
tion.
RBl
(5)
Collector current
in transistor
Ra
crease (become
creasing
more
positive)
voltage
positive
This in-
applied
is
As
base voltage
comes more
i>& 2
of transistor
positive, the
Q2
be-
base current
and
ii2
in transistor Q2.
Collector voltage
VC2
(4)
ward bias.
The process
bll
in (1)
and
(2)
above con-
of transistor
Q2
made
is
so
transistor
Q2
is
Ql
is
is
saturated
dc voltage Vac appears across resistor /?ci). That is, the current through
(total
transistor
Ql
Q2 decreases
Q2 is cut off.
to B, figure
a-nd collector
tive
CFl and
itor
The
RB2
therefore increases.
Q2
Ql
cut
is
off.
Ql remains
Transistor
voltage
capacitor
Q2.
capacitor CFl discharges, more of the previously increased positive voltage at the
collector of transistor Ql appears across
(figs.
Ql
so
Cm
happens
action
transistors.
Circuit Description
Ql appears
tor
b.
entire
cuit of a
This
provided by resistors
bias
for
transistor
Ra
and
Ql
is
RC2
Base
established
OUTPUT
TM690-3I9
figure 181
Transistor m.K*iH6rator.
transistor Ql,
sistor Q2.
to
Wave
Oscillator
of which exhibit
rectangular hysteresis loops, provide a form of
multivibrator circuit, designed to produce a square
formers,
the
wave output.
core materials
(fig.
184) op-
and at higher
supplies.
The
wave
output.
Fundamental switching action
a. General.
vibrator , is
such as occurs with a mechanical
contacts are
vibrator
The
183.
figure
shown in A,
The
simulated by ganged switches 101 and 102.
is opened, the
switch
one
when
that
such
action is
closed,
other switch is closed. With switch 101
primary
across
applied
is
Cc
battery voltage
of
winding 1-2 of transformer 71. The polarities
3-4 and
the voltages induced in primary winding
(B, fig.
secondary winding 5-6 are as indicated
battery
reversed,
are
183). When the switches
winding
voltage Vcc is applied across primary
3-4 with polarity reversed. Similarly, the voltage
redeveloped across secondary winding 5-6 is
quickly,
versed. When switching is accomplished
resistor
the voltage waveform (V K l) across load
RL is essentially square.
b.
the
Operation of
Circuit Description (fig. 184)
circuit basically depends on the
the transistors. That is, when tran.
inverter
switching of
be compared to
sistor Ql conducts heavily, it may
current
Driving
183)
fig.
(A,
closing switch 101
the transistor. Simulis applied to the base of
being comtaneously, transistor Q2, is at cutoff,
.
fre-
{a below)
the square
to eliminate ripple, because of
No
is
applied.
The
transition
driving cur-
from
cutoff to
extremely rapid
heavy conduction and
to provide a
and
burnout
transistor
prevent
to
across
square wave output. At cutoff, the voltage
vice versa
the transistor
is
fectively zero).
is
z
ee.
o
u.
u
>
<
*
Q
O
K
I
i
-I
UJ
<r
o
<
<r
m
i-
TIME-*
TM690-320
184
TIME-
B
TM690-324
Mechanical switching
Figure 183.
rent flow is high but the voltage across the transisThe switching time between these
tor is low.
points
is
dissipation.
Resistors R B and Rr establish the initial starting
bias required lor the bases of transistors 01 and Q2.
Note.
1)
toward
core flux moves from point
point B (positive saturation region) inducing a positive voltage in transformer
windings 1-2, 4-5, and 6-7. Since current flow in the collector circuit
is
from
driving
(3)
The
Q2
is
made more
positive,
it to cutoff.
changes at a rela-
tion
is
At
core sat-
circuit.
The
induced voltages quickly fall to zero, removing the base driving current from
transistor Ql which makes it nonducting.
point E.
During
Ql
is
This
is
to
and from
to E.
The output
185
Due
rent.
to
negative
is
:i
#-
ward
bias.
At
and induces a voltage in the winding in the reverse direction. That is, the
base is driven positive (reverse bias).
lapses
Base and
The
Rf, reaches the point at which the transistor is forward-biased and conduction
begins again.
(3)
TM690-325
JVffure i8^.
8oturo62e-core square
wave
oscillator.
Tl
width of which is primarily determined by winding 1-2. The time between pulses (resting or blocking time) is
determined by the time constant of reThe output
sistor Rf and capacitor CV.
pulse, the
5-6.
a.
blocking oscillator conducts for a short
period of time and is cut of! (blocked) for a much
longer period. Blocking oscillators may be either
free-running or triggered (par. 190). Only the
free-running type is discussed in this paragraph.
6.
A basic
shown
in figure 185.
circuit
The
OUTPUT
tickler-coil oscillator of
When
the circuit
is
energized, current
TM690-32I
Figure
185.
Blocking oscillator.
184.
a.
Summary
An oscillator
is
Power
and the
frequency determining networks. The regenerative feedback must overcome these losses to per-
The
mit sustained oscillation in the circuit.
amplitude of the oscillations is limited by the
normal operation of the amplifier, the amount of
feedback energy, and the nonlinear conditions
of the circuit.
parameters are
circuit
operating point is changed, thus
affecting the frequency of oscillation. Temperature stabilization is also a prime factor in the
stabilization of operating point and frequency.
Bias and stabilization techniques for the
c.
Most
changed
transistor
if the
d.
transistor
oscillator
circuit
essentially
are
the
amplifier.
/.
The
When
feedback
is
is
called a tickler-
Tickler-coil oscillators
may
transistor oscillator
quency
The Hartley
h.
tapped
coil instead
RC
The
out-
oscil-
lators.
regenerative feedback signal must undergo a 180 phase shift when feedback is accomplished from the collector to base. No phase
from
shift is required when the feedback is
collector to emitter or from emitter to base.
e.
take
or a
the form of a tuned-collector oscillator
tuned-base oscillator.
is
multivibrator.
n.
The
saturable-core square
wave
oscillator
has
higher efficiency and operates at higher frequencies than mechanical vibrators found in most
outportable equipments. The near square wave
minimum
rectifier
circuit
filtering.
187
CHAPTER
PULSE
Section
I.
11
AND SWITCHING
185. General
Circuit Applications.
a.
CIRCUITS
is
it is
usually
cuit to
metering, pulse-code communication, and computing fields. The circuits function as generators,
to
When
and wave
triggering, and gat-
is
the result
have changed
its
state.
(3)
A, figure 186,
step voltage.
At time
the voltage
tl,
by the
magnitude V. The voltage level does
not have to necessarily increase from
level
is
increased
(positively)
If the initial
current
below).
may
The input
differ
form
c.
is
wave
(1)
The changes
(2)
The
is
called a unit
circuit applications
188
In
change in
level
when
to one that
At time
tl,
C, figure 186
or rectangular pulse.
is less positive.
illustrates a square
is
increased
At time
ffi,
tl
is
fig.
186)
For
may
step voltage.
V.
(par. 188).
or negatively.
+v
1
+
1
^^*
_lB 6\^
-V
UJ
U
4
K
<
3
O
>
m
M
C
t
ACTIVE
REGION
t-
12
-^v
Id
TIME
a.
as
switches
o
a: o
3 H
t- o
I-
if
LOAD LINE
UJ
v>
150
-\
ykj
-3
V)
Id
-1
-1
o
u
<
200
1
1
MAXIMUM PERMISSIBL
POWER OISSIPATI w
A.
OUTPUT CHARACTERISTICS
or relays are
below.
Output Characteristics.
(1)
If
sN
Zff
8'
CD
In large-signal (nonlinear) operation, the tranan overdriven amplifier with resultant changes in the conduction state and the
dc characteristics of the transistor (a below).
The overdriven amplifier may be compared to a
switch or relay (b and c below). Advantages
and disadvantages of using the different tran-
-i
If
\\
IQO
sistor acts as
configuration
\\
X\
IE
given in
\J^
ce.
TM690-330
sistor
<
z
SO
+v
-J
Figure 186.
-6
-12
The
187.
-.05
"
05
x
.10
ll
1*111
three regions; cutoff, active, and saturation. An arbitrarily chosen loadline and
maximum
the
tion curve
(par. 102)
transistor is considered
of operation.
in the off (nonconducting) or on (conducting) state when it is operated in the
cutoff or saturation regions respectively.
The
(2)
cutoff
is
TM690-332
illustrated in
B, figure 187.
Circuit.
A typical
6. Transistor Switching
transistor switching circuit, is illustrated in A,
figure 188.
VCC =-|2V
Figure 187.
VB
or
Vm189
Resistors
RB
and
RBl
The
tors.
circuit are
shown
in
and C,
Each
figure 188.
is
discussed in
fig.
187) includes
lector-emitter voltage
(-A->
This
is
PNP
The collector
value of Icm (par. 188 )
voltage Vcb is indicated by the vertical
(A, fig. 187)
projection from point
to the collector voltage axis. This
value is equal to the difference in magnitude between the battery voltage (12
volts in this instance) and the voltage
.
OFF
through resistor
RB2
by battery VB2
This is compa-
The col-
by
190
Di-
Cutoff region.
(a)
transistor (B,
age)
and
St
(which
(J)
is
essen-
acteristics
In
ON
line to point
Y;
region
is
In switching
circuits,
this
considerations.
mum limitation
(par. 102)
tion
is
effect
is
also re-
the saturation
(b)
Y)
is
at a
maximum, and
from point Y)
and
(Vbat), and
is
A.
fig.
188),
diodes
satura-
I"
is
an important charac-
Deep
its
a mini-
I c reaches
collector
is at
collector current
When
Cc (A,
limited value (battery voltage
fig. 188) divided by the value of load
resistance
h ) , the transistor saturates
vcb
CBB
hH
CB
"j
-w'"B2
T
v be
CRc
;;cr e
OFF CONDITION
B.
VCE
ON
;!.
^VCC
4-v B
ii
SWITCH CLOSED
SWITCH OPEN
C.
CONDITION
SWITCHING CIRCUIT
DIODE EQUIVALENT OF TRANSISTOR
CIRCUIT
SWITCH EQUIVALENT OF TRANSISTOR SWITCHING
Figure 188.
191
0B C The
.
(C,
fig.
equiv-
188)
is
o.
resistor
RL
Transistor Switching
Conditions in
The following
chart
lists
the
The
Note.
PNP
Operating Regions.
circuit
may
also be switched
and
volt-
The
covers a
PNP
(A,
188).
fig.
transistor in the
CE
chart
configuration
respect to ground.
Region
Item
Active (on, transitory)
Cutofl
Reverse biased
High.
Low
Low
Negative (transitory)
High.
Negative.
Input resistance
(zero).
(zero).
Zero
High (maximum).
Negative (transitory)
Note.
For
NPN transistors, conditions are as In the above chart except that polarities are reversed.
d. Transistor Configurations as Switches. Regions of operation (a above) are similar for all
transistor configurations used as switches. When
both junctions of a transistor are reverse biased
(cutoff
sistance
CB
configuration
a series switch.
The output
as
is
make
for impedance
it effective
matching purposes.
small,
192
configuration
(2)
Common
emitter
(C,
fig.
40).
When
That
is,
the input
(base)
current acts
(collector)
The
transient re-
sponse of the
CE
input pulse
CB
is
configuration to an
This
configuration.
is
caused by the
This configuration
is
used at
CB
figuration
is
preferable because of
its
The
cutoff frequency
(/)
of a tran-
CB
configuration.
CC
Common collector (E, fig. 40).
configuration (emitter follower) like the
configuration functions as a shunt
The
CE
make it generally
applicable
cir-
cuit.
impedance properties.
187. Large-Signal Pulse Characteristics
ON
transistor
from
The
cutoff.
189) results because the transistor cannot respond instantaneously to a change in signal level.
The response of the transistor during rise and fall
fig.
time
cuit.
is called
The output
d below)
Note.
a.
The
Rise Time
(t,)
(also referred
is
time
re-
same
is affected.
Puke Time
time,
is
current
and Y,
(Ib) reversal that occurs between points
end of the input pulse, is the result of the
at the
rent, /.
an undesirable condition. Minority carmay be avoided by switching a transistor from its off state to a point in the active region. Collector clamping (par. 189) prevents
time
is
rier storage
turnoff time of a transistor switch is genby the sum of the storage time and fall
Decreasing either the storage time or fall time or
Note.
The
erally determined
both results in decreased turnoff time. The pulse repetition rate of the circuit is thereby increased.
sistor,
time.
193
base
region
(dashed- line arrow) from the emitter reBefore combining, however, the
gion.
electrons cause a heavy hole current to
flow from the emitter to the collector.
That is, the electrons from the collector
act as a base current bias to cause an
amplified collector current. The magni-
Figure
189.
TM 690-33
pulse
Current
TIME
characteristics,
= Icbo H~ otfJcBO
= Icbo (1+a/e)
switching
circuit.
CE and CB Configurations.
For a transistor
gions.
lector easily
re-
(2)
CB
(B,
current,
with
emitter
(
Ib =
the
base
terminal
open
is caused
Reverse bias
194
ternal conduction
fig.
The
191).
through resistor Rl causes a smill forward bias which results in the flow of
base-emitter current Ib- The latter, emplified by a factor, afe appears in the collector as afJB The smaller Rl, the lower
the collector current Icbo- In this case:
,
Iceo
(3)
= Icbo + tf Iae
If.
-0
-If
J
CEO
J
tt
o,
Ut
' I
CBO
(>
+ * f)
o
u
M
5"
|
B->
/
!
'ceo
B
TM690-334
Figure 190.
flowing
is
189. Cutoff
When
and
Saturation
a transistor
Clamping
is
may
Collector-Emitter Clam,pinff.
a.
shown
the
in
A, figure
192, a
In the circuit
Current I B
tics
figure 192.
voltage Fee
is
12 volts.
Diode
GR\ and
bias bat-
195
CBO
(1)
*CBO
Cutoff clamping. Assume that input current I B has begun to fall from 150 ua at
(B, fig. 192). The collector popoint
from 2
As
at this point.
HI VCC
VC o is 8
As
volts.
increases
from 2
volts
CR1 by
battery
toward 8
volts,
diode CR1 remains reverse biased (nonconducting). When the collector potential reaches point
(/B =50/ia) on the
load line (8 volts), diode CR1 becomes
forward biased and begins to conduct.
Further decrease in input current Ib to
zero has no effect on the collector potential, which remains fixed at 8 volts even
I CBO + f f1 B)
^:vcc
across resistor
(approximately
voltages of battery
^v cc
between the
and battery Vaocurrent Ic, which
volts)
V Bc
put potential
is fixed at
8 volts.
TM690-33S
Figure 191.
tery
Junction diode
CR2 and
its
(2) Saturation clamping. Disregarding diode CR\ and its bias battery
C o, which
are involved only in establishing the cut-
(1) below)
volts.
used
for
saturation
Vote.
Average power
dis-
must be chosen so
196
through load resistor Rl causes the voltage on the collector to fall. The bias
voltage provided by battery Vcs is equal
to 2 volts.
collector current I c ,
due to an increase in
negligible
ikCRI
V^*^/
^~nT
INPUT
-T-CR2
OUT
l_
Xu
A.
l_
%/
effectively placed
-I2
-(vco ,
cc )
-*<vcs )
-cm CONDUCTS
Z
UJ
Vcais
100
IK
ISO
2
is
volts.
The additional
^VJf
CR2
CONDUCTS
no
collector current
the
zero
from point
resistance
loadline
which
falls
The
collector-base diode
would be forward-biased in
(par. 1866).
is
When
this region
Ic, falls
To the left
Figure 192.
of
of 7s =200 ua.
B
TMS90.-337
Y repre-
193).
Collector-Base
More
When batteries
is
made
slightly greater
-
This
a nonconducting state.
cutoff
sum
Rl and RH
of point
CR3,
(3)
efficient
the
is
conducting.
(b)
circuit to satura-
197
tion.
The
resistors
Rl and R2
is
negative and
low sat-
The
from
its
current I B
is
Load current I L
Im.
lector current lc
and
driving current,
In,.
is
is
When
the col-
CR1
Rl
As input
CR1
is
and CR2.
is
more
Forward-biased diode
CRI
current I,.,, increases further, base current I B remains essentially constant and
the excess current is shunted through
Collector
resistor i?2 and diode CRI.
f"
CRI
44'IN,
-
*
"8
>-t
RL
OUTPUT
?:vcc
substituted
CRI
The
emitter-base junction
is
-w-
reverse
RL
CR2
CR2
Diode
voltage drop,
is
remains
198
lJ|"L
cr:
8
TM690-33S
Figure
19$.
Single-diode
and double-diode
(eollector-
sum of
load current l L
Section
II.
triggered circuit
is
(active or transition).
Astable Operation.
The astable mode of
operation results in relaxation-type oscillations.
The operating point for this mode of operation
a.
(fig.
187).
multivibrator circuit
Astable
cir-
The free-running
circuit
back to
An
example
is
the
The operation
is
also
referred
its
original state.
A basic
(par. 1875)
is
b. Monostable Operation.
The quiescent (operating) point of the monostable mode of operation is in one of the stable regions.
When the
multivibrator.
above).
TRIGGERED CIRCUITS
nally
is in
equal to the
and the shunted portion of input current I m. The latter is again small and
not an amplified current ((1)(6)
is
is
cir-
below).
a. Quiescent Condition.
Battery Vcc provides
the necessary collector bias voltages for both transistors and forward bias for transistor Q2. Transistor Q2 is in saturation during the quiescent
period. Negative potential v ca , at the collector of
The
Tec Capacitor
b.
Circuit Operation.
The
circuit is described
may be used.
(1)
negative pulse
is
applied through
199
Z^.
R F2
-vw
OUTPUT
Q2
v C2
1)2
INPUT
TM690-339
Figure 19$.
Monostable multivibrator.
coupling capacitor
fall
tive-going voltage
sistor
vin
crease.
Q2
increases negatively.
portion of
through resistor
Rf% to the base of transistor Ql, increasing its negative potential. This regeneration results in a rapid change, of both
this voltage is coupled
Vbl
transistors;
saturation
it
and
drives transistor
transistor
Q%
Ql
into
into cutoff.
VCC
Foe
through resistor
and the low saturation resistance of
transistor Ql.
Base potential v^ of
transistor Q2 becomes less positive.
v b2
Rn
N
r
When
Q2
The
collector potential
V C2
saturation with
its collector
voltage
al-
i
i
i
the circuit.
TM690-340
Figure 195.
200
(3)
The output
is
transistor Q2.
at this
point is essentially square. Time duration of the output pulse is primarily determined by the time constant of resistor
Rfi and capacitor C Fl during discharge
(
(2) above)
The major
difference between
provided by battery voltage F BB The collectorbase junction is reverse biased by battery Vcc
Transformer T\ provides regenerative feedback
and couples the output signal to the load. Capacitor Cr acts as a dc blocking capacitor. Capacitor
.
the
fig.
triggered
transistor.
196) and
astable
mode
due
to the bias
tion is forward-biased
as soon as dc
mode of
In the
arrangement.
power
is
and the
applied.
circuit functions
is
is
held at cutoff.
is
a single
The blocking
carrier storage
In the monostable
fig.
(par. 188c)
these characteristics.
a.
(fig.
is
196).
(2)
vided by battery
In
The
tor.
held at cutoff
VBB
When
(3)
*DC~
4-
stances, this
^Vcc
ceed
""SB
the
transistor.
collector
the saturation region introduces the undesired effect of minority carrier storage
(par.
A means of preventing
breakdown and operation in
187c).
transistor
urating).
tor
is
given in o below.
A modified triggered
blocking oscilla-
tion rate.
critical.
Substitution of transistors
The
is
made
less
CR\ and
operation
is
Circuit
201
The
tor
is
reverse-biased
collector is reverse-biased
CR1
is
reverse-biased
(fig.
] TCRI
;!.
197).
[CH2
4S
duction.
The
As
VC2
The
reverse-bias
potential
collector voltage
at the
value of Vci-
Diode CR1 acts as a short circuit to transformer winding 3-4. Thus the transistor
is prevented from going into saturation.
When the magnetic field begins to collapse, the collector voltage becomes more
negative (B, fig. 196), and the bias voltage across diode GR\ reverts to its nonconducting state when the value of Vci
is
(5)
exceeded.
The
collector
voltage
increases
nega-
Any
(
(4)
202
VC c
(fig-
196) has
verse
to
(4)
Figure 197.
from
(1)
off.
Each
transis-
by the
numerical example is illustrated in figure 199. Kesistors Rl, Rf, and Rb correspond to the
voltage divider networks in figure 198.
condition of the other.
(a)
When
a transistor
put resistance
current
is
is
cut
high and
is effectively zero.
off, its
out-
its collector
However,
RB
RL
Rr, and
voltage
The
drops
each
across
resistor.
RL
is
sistor
Q2
and tran-
bias,
(For NPN-type
conducts.
tion.
(b)
The high
collector
tion) of the
resistor
RL
current
(satura-
VC c,
of
base
volts)
by
battery
resistors
fig.
Division
199).
Vbb
voltage
Rr
in a positive voltage
and
(
RB
+ 1.5
(+2
results
volts)
(2)
point B.
This
transistor
is
is
held at cutoff.
Circuit operation
The ap-
198).
(fig.
the base of the of transistor or a positive pulse to the base of the on transistor
will switch the conducting state of the
circuit.
Collector triggering
ilarly accomplished.
are
shown
at input
in figure 198.
will
A trigger pulse
circuit.
Once the state of the circuit is
changed, an input of the same polarity
at input B or an input of opposite polarity at input
will again trigger the
circuit.
Alternate methods for control-
QZ
is
conducting.
nega-
causes transistor
Q\
to conduct.
The
Ql
fall.
Q2 and
reduces
its
at
Q2
begins to decrease.
input B
The
collector
TM690-543
Figure 198.
203
VCC -28V
VCC --28V
|2IV-)
TO BASE
OF ON
TRANSISTOR
B1-5V)
TO BASE
OF OFF
TRANSISTOR
kl.5Vj
"f
64K
64K
*B
20K
TO COLLECTOR OF
OFF TRANSISTOR.
I*
TO COLLECTOR OF
ON TRANSISTOR
VB B" +2V
VBB -+2V
A.
OFF(CUTOFF) TRANSISTOR.
Figure 199.
B.
multivibrator.
until
transistor
Ql
Q2 is
is
in
and transistor
cut off.
The time constant of capacitor CVi and
resistor Rn and that of capacitor Gf 2
and resistor R F2 essentially determines
saturation
off) of transistors
In
tively.
Ql and Q2,
addition,
the
transistor.
off
Frequency division
is
when
plications.
Ql and Q4
conduction.
204
In the
The
and
its
increases nega-
Q2
further into
tween collectors and bases of the transistors results in the rapid change of state
thus ob-
(F03 )
collector voltage
2.
in
is
of the circuit.
when used
common
duct through
Q2
is
Q3
respec-
capacitors
Operation
The
is
and ground,
(b)
The
circuit
tinues
b.
ON (SATURATED) TRANSISTOR
Circuit
reached, transistor
and
(2)
transistor
QZ
is
Q2
is
is
in saturation,
at cutoff.
At time
t&,
input
causing transistor
2,
equilibrium
Qi
to conduct
The
INPUT
INPUT
2
"V^
V|N
i
i
VSAT"
vcz
1_
i
t>
@1
VSAT
*C3
V B2
u.
tz
B
TM690-333
Figure 200.
(2)
negative.
is
state.
may
be applied
on transistor because
Qi
is
sistor out of
sition region.
(3)
applied
method used
determined by the polarity and magnitude of
(4)
The
mally used
is
the
trigger nor-
Each
out of cutoff.
may
be applied
to the collector of the off transistor because the quiescent voltage at this point
negative.
is
causes
it
out of
saturation.
circuit.
a. Triggering Methods.
The trigger pulse may
be applied or directed to the base or collector of
Note.
The
trigger pulses
must be of
suffi-
ways
circuit.
Note.
PNP-type
transistors
NPN-type
(1)
assumed In (1)
must be reversed for
are
All polarities
transistors.
(fig.
198).
is
fected
The second
transition
by a positive trigger
at input
would be
ef-
A or a nega-
An alternate method of
triggering the circuit with separate inputs available would be the application of a negative pulse
at input
and a second negative pulse at input B
tive trigger at input B.
205
c.
In certain
ward
pulse
applications,
is
it
a negative trigger
through coupling
capacitor <7P , the reverse bias diode
OR1 prevents the pulse from being ap-
is
base)
into
saturation.
in
from
Note.
transition is slowed.
no
(b)
circuit.
In
effect
For
on the
circuit.
pulse steering
positive
negative potential
consists of resistors
CR1
CR2
is
provided at the
forward-biased
is
reverse-biased.
pulse
through diode
on
is
trigger
is
CR1
while
diode
positive
therefore
applied
PNP-type
fig.
The
(B,
and
multivibrator
then
Thus the
and
second
directed
fore required,
eration
and the
ap-
Normal
multivi-
one input source (fig. 198). The tendency is to drive the off transistor into
conduction and the on transistor (negative
transistor.
is
through diode
Assume
on
figure 203.
(1)
CR2
Diode
shown
applied
is
When
bias.
The
re-
TO BASE OF
ON TRANSISTOR
cc
TRIGGER
PULSE
T~
CR2
TO BASE OF
OFF TRANSISTOR
-w-
reversed.
(a)
A.
-VCC
CRI
206
hi
SRI
TRIGGER >
*
PULSE
M
)\
CR2
fcl
PI
B.
TO BASE OF
ON TRANSISTOR
<
|r2
conducting condition because of the reverse bias, and diode CR2 is conducting
TO BASE OF
OFF TRANSISTOR
Figure H01.
TM690-345
CK2
prevents the
transistor
trigger pulse
and
is di-
$3
is
collector
CR2
collector of transistor
Note.
on
transistor.
ground.
this
the circuit.
of transistor Q\. The latter voltage prevents deep voltage saturation of tran-
Q\ and permits
sistor
a higher pulse
repetition rate.
(2)
(less negative)
Simultaneously, the increased emitter current (decreased current through load resistor LJ ) causes the
collector potential of transistor Q\ to become more negative. The regenerative
action of the multivibrator (par 1956)
.
TM690-346
Figure 202.
steering diodes.
d. Transistor
Pulse Steering.
The
transition
Q\
is
saturation.
time for the change of state of a bistate multivibrator may be decreased by using a symmetrical
transistor for pulse steering (fig. 204).
The
symmetrical transistor (Q3) is one in which the
emitter-base and collector-base junctions are iden-
Reversal of bias conditions on each junction results in normal amplifier action except that
the directions of current flow are reversed. That
tical.
is,
when
biased,
is
forward-
((1), (2),
(1)
and
(3) below).
If transistor
Q\
is
near saturation
Q2
is
same as explained
and Q2.
(2)
(col-
and transistor
battery voltage
V C c),
transistor
QZ
con-
207
may be
function identically with those described in paraPositive pulse steering diodes (par.
189.
1946) are used at the input to the multivibrator.
Multivibrator action is identical with that of the
graph
Transistor
transistor
is
Q3
Clamping.
(fig.
The
transistor
QZ
operation
It
is
shown that
load resistor
of
R L i).
(RLl or
around
its
Assume
that transistor
is
Ql
is
clamped at
conducting and
3 volts. As-
sume further that the required base-emitted voltage is 0.5 volt. This voltage could be obtained
by grounding the emitter and establishing 0.5
volt on the base with the voltage divider, consisting of resistors Rli, Rfi, and RB i- However, resistor R B i would be very low in value and excess-
is
volts.
To
voltage
offset this
tor
Q2
equal to the voltage drop across resisB minus battery voltage VmbCurrent flow from the emitter of transistor
sistor
is
b.
Q%
tery
The
a negative potential.
reverse bias
now
devel-
o.
(B,
Q\
The
to conduct.
creases
(becomes
less negative)
this
Q2
current of transistor
change
is
The emitter
RE
The emitter
of tran-
Ql becomes less negative, reducing the reverse bias and increasing collector current. This
sistor
Q\
Q2
is
cut
The output
off.
The new
fig.
voltage
is
maximum
205)
This
input begins to rise (become more positive)
positive-going input decreases the base potential
.
Q\ and
of transistor
decrease,
decrease.
The Schmitt
the
conventional
bistable
multivibrator
from
(par.
is
This ar-
with transistor
208
QX
base of transistor Q% driving it negative ; the decreasing voltage of resistor Rb causes the emitter
of transistor
actions
a
e.
rise
and
of this circuit
is
fall
The shape of
wave does not depend on the shape of
:"L|
INPUT
*..
")(-
'L2
CR5
5R2
"
]_
v CC
CR6
A
-t-
"
CR4
TM690-347
Figure Z03.
TM690-348
Figure 204.
Bistable multivibrator, using transistor for trigger pulse steering and clamping.
209
OUTPUT
INPUT
INPUT
OUTPUT
TM690-349
Figure W5.
Section
III.
GATING CIRCUITS
197. General
a.
i.
Transistor
gate
circuits,
used extensively
by making use of an
effective
open or short
collector
210
circuit
(par. 1865).
are the
circuits.
The
NOT
is
emitter
configuration.
circuits result in a
NOT- AND
Combinations of these
NOT-OR (NOK)
gate or a
re-
NPN-type
transistors.
tically
with
all
Gates
An OR
OR
(par. 1976)
is
NOR
shown
configuration.
is
input pulse
is
When the
Vcc)
As
in the
OR gate
(1) above)
Rl
-wv-
Inputs.
The
cir-
of magnitude
(1)
RB provide
RL
resistor
NOR
CB
and
cuit.
VBb
in figure 206.
Base
or negation function.
bias battery
NOR
and
NOT
the
OR
transistor
could be used as an OR gate with negative pulses and a negative output pulse.
gate (B, fig. 206) functions
(2) The
similarly to the OR gate ((1) above).
The CE configuration is used, providing
An NPN-type
(par. 187c).
OR and NOR
198.
OR
-vcc-1
SVi-
-S-vfcc
emitter floating (par. 1886). The current flow through the collector load re-
A.
OR 6ATE
B.
NOR GATE
current (Icbo)-
of current
is
at the collector
is effectively
of magnitude
When
+ VB
is
equal to bat-
an input pulse
applied to either
emitter-base junction
is
and the
transistor
Vm
Posi-
Figure 206.
Single transistor
OB
TM690-3SO
inputs.
211
pulse widening
one
polarity.
Additional gating
In each case, the
transistor outputs are connected in parallel and
make use of a common load resistor B L At
quiescence each transistor is held cutoff by battery
Two-Transistor Circuits.
b.
circuits are
shown
in figure 207.
FBB
R2
Resistors Rbi
resistors #1 and
from each other.
provide a low impedance
and Rb 2 aid
A.
fall
pulse.
(
OR
The
gate (A, fig. 207) is a CC configuration (emitter follower) with high input and low output impedances. This
circuit provides a negative output pulse
Q\
or Q%.
applied to
Battery Vbb
is
CI
Rl
-w<C2
;:"bi
Rl
INPUT A
OUTPUT
R2
If
JL
E
R B2
=-vcc
INPUT B
TM690-3SI
B.
Figure 207.
212
inputs.
When
of the
OR
AND Gates
AND gate is similar to that
198). However, the AND
and NOT
The operation
of the
gate (par.
AND
AND
NOR
Typical
and
scribed in a and b below.
gate.
NOT AND
ously at input B,
by batteries
VEB (AND
AND)
which
it is
OR
tions.
This configuration
is
(2)
199. -AND
most
is
desir-
a.
Rl and R2
tors
gate.
gate)
and
VBB (NOT
AND
-vc
of great
importance.
The
gate (B, fig. 207) provides a
positive output pulse (par. 185c) when a
negative input pulse is applied to either
transistor Ql or Q2. With no input applied, transistors Ql and Q2 are cutoff by
bias battery Vbb ; the potential at the collectors equals collector battery voltage
VC c- When a negative pulse is applied at
NOR
A.
AND GATE
input
causing conduction of transistor
Ql, the voltage drop across resistor L
subtracts from battery .voltage Vcc, and
the output goes positive. When the signal is removed the output reverts to FoePulse widening is determined by the
amount of overdrive provided. Application of an additional pulse at input B does
not cause large current flow in transistor
Q2, because of the low collector voltage
established by transistor Ql. Transistor
Ql collector voltage drops negligibly,
Rl
_r *. -V*-
en
!TL~
4"IT
-s vcc
V BB
B.
collectors
is
thus
TM690-3S2
Figure 208.
Single-tranaistor
AND
inputs.
213
(2)
not enough
is
With
the appli-
Note that
BB
is
and the
negative value
pulse
Fee).
When
either
is
rises
most
to
transistor.
The
NOT AND
gate (B,
208) pro-
fig.
when
The
simultaneously.
AND
gate
(1)
amplifica-
(NOT)
tion
posi-
inputs
circuit operates in
are
200.
The
AND-OR Gate
AND-OR gate
The
CE
NOT
AND
NOT AND
NOR
NOT AND
Ql and Q3
circuit
is
(2)
forward bias
is
AND
to
cutoff
and back
to
conduction.
(1)
When
AND
stant.
near zero.
214
Rh
drop to
sents
NOT AND
from conduction
Q2 and QB
and form a NOR
Transistors
NOT AND
by
NOR function.
difference
used in the
NOT AND
NOR
AND gate and the parallelNOT AND gates are similar to the OB
The only
connected.
series
are parallel-connected
follower
connected
also
configurations of the
are
VBB
obtained.
The
or Triggering
as the
obtained.
b.
battery
AND
gate ((1) above) except that amplification and phase inversion (NOT) are
is
209) oper-
fig.
is
and
gate (B,
same manner
ates in the
emitter
NOT AND
neously.
(2)
The
is cutoff,
output
the
NOT AND
function (b below)
Transistor Qi is a
switching element of a bistable multivibrator
b.
Triggering Application.
(par. 191).
Assuming
all transis-
is
accomplished when
gate aremet
(1)
(1)
and
AND-OR
(2) below)
Off condition.
When
all
the transistors
J~|_INPUTA
'i" 8
C2
r*~i
RL
OUTPUT _f]_
["input b
-*
VSr\
:;"bi
__Q_INPUT A
:;
R b2
-=-
vcc
J~INPUTB
X
B.
Figure 209.
voltage Vcc-
Ql,
Ql and QZ
tial
through
The
Ttoo-tranaistor
AND
( (1) above)
Since the potential at the collector of the off transistor
Qi provides the base drive for the on
transistor (not shown) in the multivibrator, the positive going pulse at the output
of the AND-OB gate results in driving
bases of transistors
connection
to
to approximately zero.
preceding
On
condition.
transistor
either transistors
of
to saturation.
The
series
path through
is effectively
Gating
circuits
Some
be used as amplitude
and cur-
cuits.
BL from
configuration,
rises
may
dis-
battery Vcc-
tors
described in
and acting as
a and 6 below.
CB
215
"L
Q1
%)
r^.
\j/AJ
PART OF
1-4 BISTABLE
MULTIVIBRATOR
INPUT C
_L_
Figure 210.
AND-OR
a. Amplitude Discriminator.
A, figure 211
shows a circuit that will produce an output pulse
only when the input pulse is of sufficient magnitude (greater than VB b) to drive the transistor
into conduction.
(
1)
Battery
b. Clamping Circuits.
In addition to providing amplitude discrimination (a above), the circuits shown in C and E, figure 211, provide constant high and low voltage levels for the output
pulse.
The collector may be negative (C, fig. 211)
or positive (E,
V Bb
made
211).
lector
When
to produce an output.
fig. 211)).
a positive pulse, larger in magnitude than VB b is applied, the base-emitter
junction becomes forward biased and the
transistor
conducts.
Current flows
through resistor
RL
Fe
When
rises at tl.
is
and emitter.
In the quiescent
Note.
High
transistor
(1)
is
level
VB b,
When
the transistor
(C,
voltage
RB
both
sufficient
must be applied
fig.
is re-
state,,
A positive pulse,
Vc
is
RL
211)
is
no current
and output
is
and
removed (2) the transistor returns to cutoff and output voltage V c will
sistor
of the pulse.
tained
if
Amplification
load resistor
216
fig.
and collector. In the quiescent condition no current flows through load resistor R L and output voltage VB is zero
ter
(2)
combined pate.
RL is
may
be ob-
made
larger
input
fig.
211).
When
the
is
The clamping
211, operates in
VVc-
shown in E, figure
the same manner as (1)
circuit
*e
:
jT""\
"BB
13
OUTPUT, V C
INPUT, V E
:"l
= V BB
'
4-
II
12
TIME -
B-
Rl
INPUT,
OUTPUT, V c
Ve
'BB
IS
-vc
fl
II
TIME
M
INPUT, V E
12
v B b!
OUTPUT, V C
VCC
V BB
t'l
TIME
tfe
F
TM690-355
Figure 211.
217
above.
The only
the transistor
is
difference
is
that
when
is
equal to
+VCc
control voltage
is
Rl
:*
gj
OUTPUT, Vc
V BB
-I
I---I
g5
I""
-=- v BB
-|
13
t4
t5
t6
'
'
-.>.
Rl
-vw-
22
5
SIGNAL.Vim
run
R2
-wv-
"l
OUTPUT, Vc
SB
a.
v BB
-I- --1-
C0NTROL,V B
^V BB
Oo
V|N-
12
13
14
IB
D
TM690-396
Figure 212.
218
V BB
voltage
(1)
is
no
Rh
(volt-
203.
a.
is
VB
is introduced.
This condition oc)
curs between times t\ and 2 (B, fig. 212)
(2) No output signal ( V c ) occurs when a forward-biasing pulse (VB ) is introduced
o.
ground.
to be large
RL
shorted to
This condition occurs between
No
effectively
is
<4.
because there
collector.
is
transistor characteristics.
/. The cutoff and saturation regions of a switching circuit are the quiescent and stable regions
of operation.
The
emitter-
212)
fig.
is
When
Vts
is intro-
When
the
emitter-base
and
is
collector-base
is
voltage
i.
When
a switching circuit
is on,
both input
minimum. When
a switching circuit is off, both input and output
resistances are at a maximum.
j. The important characteristics of an output
and output
resistances are at a
and
(saturates)
and
across resistor
RL
No
output (V c )
is
The
voltage (V B ) drives
transistor into cutoff (open switch)
control
the
and
(3)
ing, gating,
assumed
times tS and
(1)
resistor
b.
Summary
Switching circuits operate as generators,
tS.
even though a signal voltage Vis is introduced. With the forward-biasing pulse
transistor into saturation (closed switch),
(3)
This con-
collector bias
applied.
When
(FB )
(Vc )
is in-
is
de-
reverse
and the
transistor continues to appear as an open
k.
fall time.
wave form of a
switching circuit.
The undesirable effects are
produced by driving a transistor to saturation
desirable effects on the output
and
I.
cutoff.
The
bistable
(cutoff or saturation).
multivibrator has two stable or
and saturation).
o.
figurations
are
functions.
219
CHAPTER 12
I.
MODULATION
The
204. General
three basic types of modulation are ampli-
is
Changing the
bias pro-
modulated
transmitter
oscillator
(par.
may
2086)
An
be used
or an
fm
amplitude-
an
in
am
transmitter
(par. 210).
CARRIER
SIGNAL INPUT
AM
CARRIER OUTPUT
A.
AM AMPLIFIER
Amplitude-Modulated Amplifier. The waveform analysis of an amplitude-modulated amplifier is shown in A, figure 213. The carrier signal
is applied to the amplifier and the bias, which
varies the gain of the amplifier, is varied by the
modulating signal input. The output of the amplifier is an amplitude-modulated carrier. As the
carrier signal passes through the amplifier, the
a.
GENERATED
CARRIER SIGNAL
AM
CARRIER OUTPUT
modulating rate.
b. Amplitude-Modulated Oscillator. The waveform analysis of an amplitude-modulated oscil-
220
| .-|
B.
Figure 218.
AM OSCILLATOR
b.
Amplifier
(1)
jection)
General.
The
put
Any
pacitor Cl,
Any
when
the bias
is
Rl
nal
the
the
carrier signal)
rf
obtained only with low-level modulation. Satisfactory modulation with collector injection (d
below)
as
rate.
As the gain increases, the amplitude of the carrier signal increases and
as the gain decreases, the amplitude of
the carrier signal decreases. The amplitude-changing carrier signal (modulated
carrier signal
tion.
Thus, the
increased and demodulating signal inis
and decreases. Since the baseemitter bias is changing at the modulating rate, the collector current and the
gain are changing at the modulating
increased
conditions,
creases
these
increased
increases
creased
of the
Under
rier signal
be distorted.
is
is
base-emitter bias
The
Rl.
is
g.
Injection).
(1)
-1
Tl*
*!
transformer
TM690-3S2
figure
%1J,.
Tl
is
coupled through
amplifier Ql.
The modulating signal,
coupled through capacitor Cl, is devel-
resistor
R3.
When
221
AM
CARRIER OUTPUT
TM690-363
Amplitude-modulated amplifier with base injection.
Figure 215.
the
voltage
drop
(modulating
R3
ulated
signal
(modulating signal voltR3 opposes the voltage drop across series resistor Rl, the
When
the
Ql
increases
As
the
gain increases, the amplitude of the carrier signal on the collector increases and
when the gain decreases, the amplitude
of the carrier signal decreases.
The mod-
present
C4
is
The
Capacitor C2 is an audio
and rf bypass capacitor. Capacitor Cl
couples the modulating signal to the
resistor Rl.
swamping
resistor
R3 is
the emitter
and capacitor C3
is
AM
TM690-364
222
the
output.
(2)
CARRIER OUTPUT
Figure 216.
in
voltage drop
signal
carrier
cir-
d.
Injection)
(1)
(2)
transformer.
swamping
constant and the voltage between the emitter and the collector
This
is varied at the modulating rate.
condition permits satisfactory low-level
or high-level modulation. The carrier
emitter-base bias
is
R\
Resistor
is
VEE
bypass capacitor.
Battery
emitter-base bias.
Capacitor
lel
the emitter
and capacitor C\
resistor
primary of transformer
7*2
is
provides
Transformer
nal.
7'2
provides output
is
coupling.
Capacitor OS
is
T2
AM
CARRIER
CARRIER
SIGNAL
INPUT
OUTPUT
3C
T3
MODULATING
SIGNAL
It
INPUT
1
Figure 217.
II
'I
Amplitude-Modulated amplifier
primary of transformer
7*2.
C2 and the
The mod-
TM 690-365
signal
collector bias.
ulating signal
VCc-
The modu-
method
voltage. As the
voltage increases, the
gain of amplifier Ql increases and as the
the
emitter-collector
emitter-collector
emitter-collector
gain decreases.
amplifier
Ql
increases, the
amplitude of
when
the
C2 and
(fig.
218).
Each
respectively.
Amplifier
Ql
provides
Wind-
T2
circuit.
shown.
223
nc
X
-X
MODULATING
SIGNAL
INPUT
is
covered in paragraph
x-*--'
5
into oscillator circuit.
aiding
modulating signal
171.
b.
Figure 218.
of oscillator operation
AM
CARRIER
OUTPUT
Amplitvde-Modulated Oscillator.
An amplitude-modulated oscillator with
the modulating signal injected into
(1)
is
The modulating
microphone
Ml
shown in
signal
is
figure 219.
voltage
developed
QX and
across
transistor
of
An
Q\
modulated
at the
modulating
Increasing capacitance
R3
-^VW-
:#; <=ce
"
224
An
tor voltage,
t 3 SEE
Figure 219.
rate.
i_
C2^i
An increase
the gain.
The amount
in-
and an op-
from
voltage
^+ cc
JT+
Cce represents the output capacitance between the emitter and collector (par.
103). Winding 5-6 of transformer T\
provides output coupling. Battery Fee
lation
the
Since the frequency of oscildetermined by this resonant circuit, the output frequency of the oscillator is changing at the modulating rate.
Thus, the output signal of the amplitudemodulated oscillator is amplitude and
frequency modulated at the modulating
is
rate.
(2)
Ml
Microphone
R\
tor
tors
R2 and BZ form
Resis-
a voltage divider
R4
is
the emitter
and capacitor
capacitor.
(72 is
Transistor
bias.
swamping
re-
an audio bypass
Ql
provides the
Amplitude-Modulated Amplifier. The requirements for transmitting an amplitude modulated carrier using transistors are the same as
those for electron tubes (TM 11-665). Figure
220 shows a block diagram of a typical transmitter
using amplitude-modulated
amplified
waveforms of each stage. This type of modulation is normally employed in transmitters requiring a large power output.
The oscillator
generates the fundamental carrier frequency
which is increased by the multiplier stage. The
a.
fier.
an
the
the
required
feedback.
Capacitor
(73
final
electrical signal.
signal
stage.
vides
sufficiently to
resonant
circuit.
Capacitor
The audio
sufficiently
is
The modulator
to
amplifier amplifies
drive
the
modulator
w
AM
OSCILLATOR
MULTIPLIER
DRIVER
POWER
AMPLIFIER
Ml
AUDIO
INPUT
SIGNAL
D-
AUDIO
AMPLIFIER
MODULATOR
TM690-368
Figure 220.
495900
059
15
225
The modulated
carrier signal
fm
transmitter.
Frequency-Modulated Oscillator.
1 ) A typical frequency-modulated oscillator
stage is shown in figure 223. In this application, the frequency modulation is
Amplitude-Modulated
Oscillator.
An
am-
multiplication- would
by
The modulating
established
the
increase
The power
signal, coupled
and as the
(par. 103)
collector voltage
When
creases.
amplifier stage
modulation.
reactance
through
transformer T2, varies the emitter-base
bias of reactance modulator Q2. Since
the bias is increasing and decreasing at
the modulating rate, the collector voltage
also increases and decreases at the modulating rate. As the collector voltage increases, output capacitance Cos decreases
frequency
and de-
the oscillator
in figure 222.
(2)
is
The output
therefore
p.
AUDIO
AMPLIFIER
AUDIO
AMPLIFIER
for
Winding
4r-5
oscillator
frequency.
of transformer
T\ provides
the
MODULATED
OSCILLATOR
POWER
AMPLIFIER
TM690-369
Figure 221.
226
of
a frequency-
Ml
SIGNAL
Thus,
AUDIO
The
suffi-
a.
is
Frequency
oscillator.
FM CARRIER SIGNAL
TM690-370
Figure 222.
oscillator.
MODULATING
SIGNAL
INPUT
TM690-37I
Figure 223.
227
gram of a typical fm transmitter with waveforms is shown in figure 224. The audio signal
7'1 varies
and
transmission.
The
as those
block dia-
The power
fm
11-668).
(TM
stage.
same
require-
TM690-372
Figure 2^4.
Slock diagram of
fm
Section
II.
Under
these conditions,
when two
frequencies are
applied to the transistor input, four major frequencies are produced in the output. Two of the
output frequencies are the original frequencies
that were present in the input. Another one of
the output frequencies
228
MIXING
sum of the two original frequencies.
The remaining frequency that is present in the
equal to the
211. General
dynamic transfer
is
a frequency that
is
output
is
a frequency that
is
quency
is
of interest,
and
all
is
The
difference
referred to as the
stage are
input frequencies applied to the mixer stage produce four prominent output frequencies (a above)
The original radio frequency present in the output
The original oscillator freis represented by Fl u
quency present in the output is represented by
F2 The sum of the two original frequencies is
represented by Fl plus F2. The difference of the
.
is
represented by
Fl
c.
The input and output waveforms of a conshown in B, figure 225. One fre-
sented by
Fl u
The sum of
the
two frequencies
is
Fl,
F2|
FI
+ F2
FI-F2
A.
MIXER STAGE
F2,
FI
+ F2
FI-F2
B.
CONVERTER STAGE
TM690-373
Figure 285.
229
214. Converter
is
213. Mixer
a.
The
signal,
is
shown
in figure
1.5
megacycles;
the
if
signal,
500 kc.
is
following stage.
shown
mary
of transformer T3, selects the desired intermediate frequency. The intermediate frequency
is then coupled through transformer T3 to the
following stage.
b. Capacitor Cl and the primary of transformer Tl form a parallel resonant circuit for
the radio frequency which is coupled through the
transformer to the base circuit of converter Ql.
Resistor
stage.
resistor
b. Capacitor Cl and the primary of transformer Tl form a parallel resonant circuit for
the rf signal which is coupled through the transformer to the base circuit of mixer Ql. Capacitor
C2 and the primary of transformer T2 form a
sistor
quency which
is
bypass capacitor.
swamping
capacitor.
Resistor
R2
is
R3
is
C4
is
the emitter
resistor
R2
capacitor
form a
lowing stage.
The primaries
of transformers
OSCILLATOR
SIGNAL
INPUT
TM690-374
Figure 2SB.
230
Methods of injecting an
mixer
stage.
T2
selec-
Ql
SIGNAL
-C5
IF
.80
OUTPUT
RF SIGNAL
SNAL v_UCI
110
INPUT
R2
,C3
".OIUF
1,500
T2
OSCILLATOR
SIGNAL
INPUT
C2
50
R3
25K
Rl
2,500
,C4
".OIUF
-=- vCC
note:
7rZ
Figure 228.
'
5 t
SIGNAL
S,GN
OUTPUT
231
Section
III.
DEMODULATION
The
tection) are
cw
detection,
am
detection,
(de-
fm
and
detection.
accomplished
by heterodyning the carrier signal with the output
of an oscillator to produce an audio signal. The
oscillator stage in a superheterodyne receiver used
for this purpose is called a beat frequency oscillator (bfo).
The bfo frequency is adjusted to
differ from the intermediate frequency of the
receiver by a low audio frequency. For a complete theoretical analysis of
TM
The
cw
detection, refer
cw detection
for electron tubes apply equally to transistors.
6. Am, Detection.
detection may be ac-
to
11-665.
principles of
Am
Fm
Fm
Detection.
detection
may be
ac-
AM
CARRIER INPUT
1
iMIto/wJlMlAtoAAA
fflMVVvyMMVVYy
AM
DETECTOR
1 mM
A.
fm
detector
Am
the
OUTPUT
A A
V V
f 1
B.
H tis
*<
TM690-377
Figure 229.
232
am
is
the rectifying
and capacitor CI
it
capacitor
CR1
not con-
is
is
essentially
discharg-
filters
Current
Output.
is
type of detector
shown
may
current
output-type
in B, figure 230.
This
diode
is
FM DEMODULATION
CR1
the load,
cycle.
b.
FM
DETECTOR
is
Diode
filter.
signal since
Rl
which
AUDIO SIGNAL
of the
diode detector
FM
The output
signal.
OUTPUT
AM DEMODULATION
ing of capacitor Cl
K- m
CARRIER INPUT
an audio
is
AUDIO SIGNAL
A A
V V
filters
216.
Cw Detection. Cw detection is
a.
and
detector rectifies
215. General
tube
CR1
is
circuits.
CR1
Ll
is
the
filter.
Rl
Diode
carrier signal.
sistor
Rl
is
When
diode
CR1
conducts, re-
VOLTAGE OUTPUT
VOLTAGE DETECTION
A.
CARRIER
SIGNAL
INPUT
~ii
B.
Figure 230.
cri
r.UBBFNT nilTPIIT
Rl
CURRENT DETECTION
TM690-378
LI
P"^
all
be used to couple the output of the transistor detector to the following stage.
a,
Common-Emitter.
A common-emitter transistor detector is
shown in figure 231. The if signal ap-
(1)
result is
(par. 216a).
detector.
217.
Am
The
The
by
is rectified
(TM
11-665).
Amplification takes
(2)
Rl
transistor.
Capacitors
coupling
(a
may
is
fol-
lowing stage.
Capacitor CI and the primary of transformer Tl form a parallel resonant circuit for the if signal which is coupled
through the transformer to the base-
Resistance-capacitance
R4
is
Resistor
resistor
233
TM690-379
Common-emitter transistor
Figure 2S1.
Capacitor
itor.
C3
Resistor
is
R3
is
the emitter
swamp-
Common-Base.
(1) A common-base
shown in figure
of the if signal are detected in the emitter-base circuit of transistor detector Ql.
detector
transistor
232.
is
Detection takes
detector.
Ql and
amplification takes
is
When
positive
on
C2 charges
On
C2
the nega-
discharges
TM690-380
Figure 232.
234
Common-bate
transistor detector.
and transformer T2
is
am
an
transformer.
tector.
Fm Demodulation,
218.
Discriminator
discriminator in an fm receiver performs
the same function as a detector in an am receiver.
Figure 233 shows a transistorized version of an
if
Detailed vector
is covered
TM
11-668.
Amplifier
Ql
amplifies the if
swamping
Resistor
Rl
and capacitor
CI is an if bypass. Capacitor C2 and the primary of transformer Tl form a parallel resonant
circuit for the if signal which is coupled through
is
the emitter
slope
Capacitor
C3 couples the if signal to the secondary of transformer Tl for phase shift comparison. The if
signal, coupled across capacitor C3, is developed
is
applied to
Fm Demodulation,
Slope Detector
a.
slope detector converts the frequency
changes of a carrier signal into amplitude changes.
Figure 288.
If amplifier
if
plied to diode detector CRl. The resultant output is an audio signal which is equivalent to the
frequency deviations of the if input signal.
I.
Tl
The
is
Ll and capacitor C2
the carrier frequency) devel-
(tuned slightly
ofl
when
the fre-
and
decreases,
respectively.
Ql changes
Since the
at the frequency
quency deviation
slope detector
is
rate.
an
if signal that is
CRl
The
if signal
is rectified, filtered
applied
by
coil
219.
am
The
in figure 234.
resistor
and an
detector
shown
detected by
is
an audio signal.
Capacitor Cl and the primary of transformer Tl form a parallel resonant circuit for the
c.
if
signal which
and discriminator
is
stage.
235
'W
IF
SIGNAL
INPUT
n[
JL
] [ CRI
AUDIO
OUTPUT
Fli
iicz
ii
R3
T*
Figure 23$.
capacitor
signal.
is
is
limiter stage.
g.
is
When an
oscillator is
h.
amplitude modulated,
An
transmitted.
236
place in the
same
oscillator signal.
i. The four frequencies present in the output
of a mixer or a converter are the two original
frequencies, the sum of the two original fre-
frequencies.
is estab-
before
be
it
j.
it
The distinguishing
that
quencies,
b.
TM690-382
k.
and amplifies
am
receiver.
ulated carrier
CHAPTER 13
ADDITIONAL SEMICONDUCTOR DEVICES
221. General
Since the development of the point-contact and
the junction transistor, continuous research in the
sistor (par. 32) ; the P-type point-contact transistor (B, fig. 235) may be considered similar to
an
NPN
of semiconductors has provided many additional semiconductor devices. Some of these semiconductor devices are now used in military and
field
o.
tion transistor.
and applications of
The
additional
semiconductor
devices
devices.
are
as
follows
a.
b.
c.
d.
e.
of the collector
in a junction
EMITTER
COLLECTOF
+
+~
BASE
A.
B.
sistance) connection, but the emitter and the collector contacts form small area (high resistance)
connections.
b, Although the point-contact transistor
employs an N-type or a P-type material, P-type or
N-type layers respectively are present under the
contact points. The P-type layers present under
shown
polarities, the
in A, figure 235.
For biasing
N-type point-contact transistor may
be considered similar to a
PNP
junction tran-
TM690-392
Figure
235.
237
greater nonlinearity,
is
characteristic curves of the pointcontact transistor are similar to those of the junc-
current.
The
LIGHT
SOURCE
RL
OUTPUT
a.
movement of the
LIGHT
SOURCE
^r-CASE
decrease in the current flow through the semiconductor. The point-contact photosensitive semiconductor (6 below) and the junction photosensitive semiconductor (c below) are used in various
circuits for detection, translation, switching, etc.
6.
Point-Contact.
point-contact photosensi-
LIGHT
'
SOURCE
tive semiconductor is
figure 236.
is identical
The operation of
this circuit
semiconductor circuit is
The operation
shown
in B, fig-
of this circuit is
238
(2) Double.
Junction.
ure 236.
PN
is
The material
c.
Photosensitive semiconductors.
Figure ZS6.
PN
PN
second
photosensitive
junction
(6
and
(1)
semiconductors
above).
Operation.
The highest frequency that can be amplified by a three-terminal junction transistor is limited by the input (emitter-base
(1)
ductor material.
However,
this
method
is
(2)
A tetrode transistor is
237.
shown in A, figure
in the
(PNP
pacitor
CI
<73 to the following stage. Cathe input coupling capacitor. Resistor Rl develops the emitter-base bias and resistor R2 is a voltage dropping resistor. The bias
across the base region is obtained from battery
Ves- Resistor RZ is a voltage dropping resistor.
through capacitor
pacitor
CI
Resistor
is
#4 and
capacitor
C2 form
a low-fre-
225. Spacistor
a. General. In addition to the input and output
capacitances of the three-terminal junction transistor limiting the high-frequency amplification
range (par. 224a (1) ), another factor is the transit
the
manner as the
terminal transistor.
Terminal 4
threeis
in-
239
4
-.09
.4
+ 10
-.05
.3
+ 10
-.0*
-.2
+ 10
^^^05
-.1
+ 10^^^
-.05
^v BB
CARRIERS
-~V EE
+ .4
+_
+ .05
10
It
TM690-394
Figure 237.
The
spacistor
(fig.
238) elim-
time.
b.
240
(several
(1)
This intense
transit time.
(
2)
The magnitude
of this current
is
propor-
battery
Vn and battery
Vcc-
The transit
tion
is
and
The modulator
modulator and
is
forming a
cathode)
collector
Battery
or 2
battery voltage
If
(collec-
This acts as a
varies accordingly.
apart.
as
tor to base)
wi
covers.
tion
biased
(acting
biases the
that of battery
injector
is
draws no
called a modulator.
(c below).
amplifier
o.
A practical
Ay-plication.
is
shown
in
COLLECTOR
?A
INJECTOR
=-cc
+
-
%
ma.
VJYj
+
V,I
BASE
OUTPUT
TM690-S95
Figure 238.
241
former Tl.
resistors
The
R2 and
PN
the
PN
(2) Battery
The unijunction
Operation.
(single junc-
characteristics of a conventional
junction diode.
(1)
With
battery
from terminal 3
to terminal 2 as indicated.
With
minal
3,
connected to terminal
junction
is
reverse biased.
the
The only
Heavy
ter-
ward
PN
cur-
flow (solid-line arrows) occurs in the Ntype material, and a heavy hole current
is
biased.
electron
+ 10
+8
/!
Si
1_L
+6
VBB
+4
5v
Sfo
+.
10V
+2
AA
C
Figure 2S9.
242
TM690-396
current
1.
(2)
((1) and
above) of the unijunction transistor make
it especially suitable for use in multivibrators and sawtooth generators (6
These
characteristics
below)
b.
Application.
PN
junction.
PN
junction.
As
Cl
capacitor
The
Operation.
four-layer diode
PN
PN
PN junctions
REVERSE
FORWARD
BIAS
BIAS
BIAS
N
C
fig.
(A,
240) consists of four layers of semiconductor mateThe four layers of N-type and P-type
rial.
The
biased.
are forward
terminal transistor
is
vee
Vee
+1.1r
_+l.l.-
~n T
TM690-397
Figure 40.
243
(pars. 32
and 33).
The
The dotted
line
through the
PN
ma-
diode
is
junction.
The PN junction of
NPN transistor connected to the negative side
the
PN
NPN
and
is
base of the
PNP
transistor
is
The
connected directly
Vee-
The
arrows
represent
electron
CI provides
sufficient bias,
the four-layer diode. Capacitor 01 then discharges rapidly through the four-layer diode. As
capacitor
CI discharges, the
Summary
228.
a.
similarly to an
The
current flow.
frequency applications.
oscil-
power
244
is
e.
The
spacistor
may
to flow
/.
sistor.
g.
The unijunction
transistor
is
a single junc-
It
may
two junction
transistors.
APPENDIX
LETTER
1.
Roman
SYMBOLS
Apptart
Letters
flrit
firtt
Meaning
Symbol*
Af
age
am
A,
bfo
paragraph
or daeription
Band pass
of a resonant circuit
Current gain
-Amplitude modulation.Voltage gain
Beat frequency oscillator.
-_ Constant (when following an equal
Common-base
Ce j
Interelement
capacitance
base and collector
Interelement
capacitance
base and emitter
Interelement
capacitance
C.t
,--
collector
CC. CE.
cm
Cs
CR--
103
103
between
and emitter.
38
38
Common-emitter configuration
15
cu>
Neutralizing capacitor
Junction diode.
Reflected capacitance.
Continuous wave transmission
Eiy
Input voltage
Boot
fm
Output voltage
Frequency modulation
C,-
- -
103
154
86
146
215
94
94
3
h,
if
m_.
ma
mv
mw
N
N-type
NPN
P-type
70
70
70
60
70
70
Collector-emittance conductance
gi,.
g it
Input conductance
(?
Maximum power
Output conductance..
gr ,
Hybrid
Input resistance of common-base con-
hi,
figuration
cuited
hi c
with output
short-cir-
51
common-
of
63
Output
conductance
common-
of
configuration
with
43
47
51
(ac)
collector current
Intermediate frequency
Turns ratio of a transformer
Milliampere
Millivolt
Milliwatt
Number
52
input
an inductor
Semiconductor with donor impurity.
Transistor with one P-type and two
N-type semiconductors.
Semiconductor with acceptor iropuof turns in
47
52
211
146
30
58
102
146
2
2
2
rity.
PN
70
62
Dc
70
conductance
Ic
IB
186
Base-emitter conductance
common-base
ic
146
Base-collector conductance
of
open.
Total emitter current
Changing base current (ac)
Dc base current
Changing collector current
/,
Cutoff frequency
Qh.
Output
emitter
Frequency of resonance
g, t
51
open.
h,
j,
56
Output conductance
collector
Power gain
Ib
between
in
paragraph
or daeription
circuited.
h oi
between
Centimeter
_
hi,
38
configuration
Common-collector configuration
_
146
157
54
3
55
215
51
(=) sign)......
CB-.
in
Meaning
Symbols
Appears
Ai.
PNP
Q
RT
Power.
Combination
31
of
semiconductors.
Transistor with one N-type and two
P-type semiconductors.
_. Selectivity of a resonant circuit
2
2
146
Thermistor
Ac base resistance
A coupling circuit employing a resistor
and a capacitor.
83
68
88
r,
Ac collector resistance..
Ac emitter resistance
n.
68
68
68
n,
put open.
Input resistance with output open..
rj
RC
62
RL
63
Load resistor
Mutual resistance
RH
Neutralizing resistor
r,
in-
68
54
68
154
68
245
Appears
first
Meaning or
Symbol*
description
iu
Greek
2.
Letters
Appears
paragraph
first
r
Si
_-
Current-stability factor
_-
Transformer
Sy
T.
TC
t,
I,
(r
(,
VB g
Vcx
V,
t it
Voltage-stability factor.
Time constant
Falltime
Pulse time
Rise time
Storage time
Fixed base-emitter voltage
Fixed collector-emitter voltage
Source voltage
Changing voltage (ac) between base
and emitter
Changing voltage (ac) between
lector and emitter
l'SA T
Saturation voltage
Admittance
Impedance
246
Meaning
Symbol*
68
75
75
83
180
187
187
187
187
51
or description
a /s
a fc
Forward short
51
ration
Delta; incremental change
54
oo
Infinity
ixa
Microampere
47
ii
rb
47
n rc _
n r,
col-
186
70
70
52
62
tion
a/,
in
paragraph
CB configuration _
CC configuration CE configuration -
52
51
77
30
62
63
51
APPENDIX
II
REFERENCES
TM
11-661
Electrical
Fundamentals
(Direct
Current)
TM
11-662
Electron Tubes
TM
11-664
Test Equipment
11-665 C-w and
TM
and Receivers
A-m Radio
Transmitters
TM
TM
TM
F-m
TM
TM
Pulse Techniques
Generation and Transmission
11-668
11-669
11-670
Amplifiers
11-672
11-673
and
of
Microwave Energy
TM
11-681
Electrical
Fundamentals (Alternat-
ing Current)
247
GLOSSARY
DEFINITIONS OF
A substance with
Acceptor Impurity
when added
three (3)
atom which,
Amplifier, Class
A An
always on the
is
Amplifier, Class
BAn
Amplifier, Class
y2
CAn
than
AND
y2
more
Circuit
(AND
Gate)
coincidence cir-
when
all
AND-OR
Circuit
(AND-OB Gate)A.
gating
dition
when
several possible
of the
combined input
Astable Multivibrator
function
either
in
of
two semistable
states
re-
In a semiconductor, the electric field between the acceptor ions and the donor ions at
a junction.
and
difference of the
combined frequencies.
Bistable Multivibrator
a cycle.
transistor
In
mon
Barrier Height
248
that can
states requiring
Amplifier, Class
UNUSUAL TERMS
to the input
configuration
electron tube
is
amplifier.
power amplifier
circuits.
static
characteristic
of a particular transistor.
Cross-Over Distortion Distortion that occurs at
the points of operation in a push-pull amplifier
where the input signals cross (go through) the
Electron-Pair
atoms.
lector Amplifier.
Emitter
The emitter
is
comparable
Equivalent Circuit
two or
cent to 10 percent of
its
maximum
value.
In
Forward Bias
Forward Short
maximum
gain.
variable)
is
Dynamic Transfer
sistors,
Circuit
Current Amplification
of incremen-
tal values of
energy
Factor
Characteristic Curve
In tran-
output current (dependent variable) with variation of input current under load conditions.
tions.
PN
made
junc-
to each
end layer.
Gating Circuit
circuit to
apply
or eliminate a signal.
See
Common-Base
Amplifier.
Hole
structure of a semiconductor.
The
hole acts
a positive mass.
result
several voltages
arbitrarily
controlling.
249
Interelement Capacitance
by the
PN
transistor;
of the transistor.
Junction Transistor
ductor material.
See
Transistor.
condition.
vibrator.
The
An
prevention of oscillation of
OR
NOT AND
CircuitAn
NPN
N-Type Semiconductor
semiconductor into
Open
OR
Parameter
calculations.
250
movement.
PNP
center.
Point-Contact
tion
made by a
of a semiconductor.
Polycrystalline Structure
The
granular struc-
Pulse Amplifier
wide-band amplifier used to
amplify square wave forms.
Pulse Repetition Frequency The number of nonsinusoidal cycles (square waves) that occur in
1 second.
carrier
structure.
Multivibrator
type of relaxation oscillator
for the generation of nonsinusoidal waves in
which the output of each of two stages is
coupled to the input of the other to sustain
oscillations.
See Astable Multivibrator, Bistable Multivibrator, and Monostable Multi-
NOR
semiconductor
Monostdble Multivibrator A multivibrator having one stable and one semistable condition.
trigger is used to drive the unit into the
semistable state where it remains for a predetermined time before returning to the stable
Neutralization
Photosensitive Semiconductor
maximum
when no input
in a circuit
signal is applied
to the circuit.
PN
output element.
Stabilisation
voltage
is
removed.
Stray Capacitance
into a circuit
The
capacitance introduced
to
Swamping Resistorla
minimize the
mask
(or
Thermal Agitation In a semiconductor, the random movement of holes and electrons within a
crystal due to the thermal (heat) energy.
Thyratron
acoustical
power to
power.
semiconductor device capable of
Transistor
signal from one circuit to ana
transferring
electrical
Trigger Pulse Steering In transistors, the routing or directing of trigger signals (usually
pulses) through diodes or transistors (called
steering diodes or steering transistors) so that
the trigger signals affect only one circuit of
several associated circuits.
PN
to another.
gain.
Zener Diode
into the
stabilization.
251
INDEX
Paragraph
Acceptor impurities
Additional bias arrangements of amplifiers
Am
detection
Diode
Transistor
Amplification factor, current and voltage
Amplifiers
Classification
Coupling:
Direct
Impedance
.-_
RC.J
Transformer
Types:
Amplitude-modulated
Audio
Common-base
Push-pull
(rf)
Wide-band
Amplitude-modulated
Base injection
circuits
Audio amplifiers
Audio amplifiers, classification
Automatic gain control
_..
collector voltaga
emitter current
Typical tuned amplifier
Autotransformer coupling
112
45
46
___
lOd
107
108
157
1586
158a
159
149
13a
1276
27
43
Barrier, junction
252
220
107
208
204
199
200
190a
Atom
Forward transfer
Output.
205a
2056
205
205
configuration
configuration
configuration
configuration
119
146
118
119
161
Emitter injection
Use
Amplitude modulation
CB
CB
CC
CE
118
147
116
117
45
128
119
159
amplifier:
Collector injection
Dc
De
62c
37
108
44
232
232
233
72
42
112
39c
396
131-133
117
Common-emitter
Tuned
21
39
2156
216
217
39a
Common-collector
Page
186
220
220
220
225
220
213
214
199
12
112
112
155
156
155
157
147
17
125
31
78
48
88
83
91
76a
87
72
75
58
104
102
62c
63c
51
101
100
Paragraph
Page
12c
16
201
Clamped blocking
1926
oscillator
Clamping:
1896
189a
i75
1 8
1896
74a
189a
175a
I 776
38a
39a, 76a
105c
Collector-base saturation
Collector-emitter
Clapp
oscillator
Classification of amplifiers
Collector-emitter clamping
Colpitts oscillator
Colpitts oscillator, crystal
Common-base amplifier
Bias arrangements
Comparison
of gains
197
195
171
112
197
85
195
171
176
43
45,87
1 9
Current
Flow
Gain
77c
Stability factor
---
Equivalent circuit
Hybrid parameters
Input circuit equation
"
62c,
1116
62a
70
646,68
62c,
Resistance
Static characteristic curves
Voltage:
Amplification factor
Bias stabilization
Base voltage control
Common-emitter
Diode circuit
Double diode
62d, e
62a
Input resistance
Output:
Circuit equation
Conductance
CC
CE
72
48
77
88
73
62c
42a
64a
Amplification factor
collector current
---
72
72, 113
72,
72
82
77,80
62c
72
62c
39c, 76c
72
46
44
46, 87
105e
111
76 c
766
75
83
87
87
86
91
190c
96
92
93
183
92
94
90
199
1926
183
192 a
95
201
186
201
99
140, 141
139
142
154
40
38c
85
87
182
86
88
81
91
Blocking oscillator:
Clamped
Free running
Triggered
Breakdown diode temperature compensation
Bridge:
Building blocks
Capacitance coupling
Capacitance, interelement
143
156
126
150, 151
103
16
148, 149
107
253
Paragraph
Page
102
101
100
106
104
102
51
58
Amplification factor
62c
Flow
Gain
42a
646
72
48
77
88
Characteristic curves:
Constant power dissipation line
Dynamic Transfer
Load
line
Static
Current
77e
Stability factor
Equivalent circuit
Hybrid parameters
Input circuit equations
Input resistance
63d,e
--
63
63a
63c, 1116
77
75
75
75, 113
Output
63a
Circuit equations
Conductance
63c, 70
Resistance
636,
68
75
82
75, 80
75,
63c
Amplification factor
Gain
Phase relations
Common-emitter amplifier
Bias arrangements
Comparison of gains
Current:
Amplification factor
Flow
Gain
Stability factor
Equivalent circuit
Hybrid parameters
Input circuit equations
Input resistance
Output:
Circuit equations
Conductance
Resistance
42
42
386
396, 766
105(2
52a
41a
54
77d
45
51a
49, 53
57, 1116
70
63c, 68
Input resistance
Output resistance
Comparison of volume controls (transistor and electron tube)
Compensation
High frequency
Low frequency
Simultaneous high and low
Complementary symmetry
Bridge arrangement
Circuit
Compound
Compound
connection
Compound-connected transistor
Compound-connection, complementary symmetry
254
47
64
87
52
58
63
55,
67, 113
64,
75,
64
82
80
51
58
516
41
90
59
47
95
217a
233
105
109
108
108
108
Voltage:
Amplification factor
Gain__
Generator resistance
61
53c
526,
75
48
48
43
45, 87
110
104c
1046
104c
120
1626
165
166
168
134
141
135, 136
139
96
137,
138
139
120
160
161
163
163
133
139
133, 135
139
12
137
139
Conductance of
transistor:
Input
Output..
Conductors
Conductivity, crystal
Configurations, comparison
--
Converter.
Coupling networks
Autotrant former
Capacitance
Direct
58
214
1*6
I 49
--
150. 151
Crystal characteristics
Crystal oscillator
Colpitts
CC
120*
--
>
72
01
120
17
40
42
4 1
04,100
64a
646
54
58
2106
46
48
47
77,102
77
77
64
67
232
configuration
77c
77e
configuration
77d
8T
87
87
configuration
configuration
configuration
configuration
configuration.
configuration
Current generator
Current output type diode detector.
Current stability factor:
CB
CC
CE
i49
1*6
144
100
19
175
I 71
i76
52a
Current gain
CB
CC
CE
u9
151
02c
configurations.
configuration
CB
CC
CE
U7
1*56
102
16
',il
177
175
1 77 <>
amplifier
Wide-band amplifier
and
116
I 48
Single-tuned
17
20
108, 109
1 6
67
230
144
I 47
1*8, 149
146
149
118, 119
118
Transformer,
Double-tuned
61
"
118
I 47
1516
RC
CB
CE
82
12
Inductive _
Interstage
Tuned
Page
706
52
15
17d
104, 105
Impedance....
Paragraph
--
configuration
Curves, characteristic:
Dynamic transfer.
Load line
Static
line
100
14
102
51,02c
58,72
11
10
104
102
232
1 2
11
Forward
Output
transfer.
215a
Cw detection.
1116(3)
248
115
2156
210
232
232
217b
217a
233
233
Glossary
Definitions
Degeneration
Detection (demodulation)
Am
Diode
Transistor:
Common-base
Common-emitter
255
Detection (demodulation)
GtHitinued
Cw
Fm
Dielectric
Diode:
Action in PN junction
Bias stabilization
Detector:
Current-output type
Voltage-output type
Junction
Point-contact
218
219
232
232
235
235
156
18
30
85
35
92
2166
216a
232
232
26
2d
95
Temperature control
Direct-coupled amplifiers
Discriminator.
Dissipation line, constant power.
Donor impurities
Dynamic
and unbalance
Electron
Electron flow
Element
Emitter-base junction resistance.
Emitter resistance
Emitter voltage control, bias stabilization
Equalization, gain
Equation, input circuit
Equation, output circuit
Equivalent circuit:
configuration
configuration
configuration
Hybrid
101
99
119
235
106
21
93
238
104
193a
202
13
12
17
146
17
118
218
102
186(1)
87
223c
15
9a
12
746
78
182
152
49, 62, 63
50, 62, 63
85
62d, e
63d, e
45
53
88
183
151
55, 72, 75
56, 72, 75
73
77
52
63
166
19
Feedback, degeneration
Feedback, regeneration
187d
1116
170a
Fm detection
2 15c
193
113
165
232
34
92
Forward-bias
Forward-bias stabilization
Forward transfer:
Conductance
Resistance
Static characteristic curve
Four-layer diode
Four-transistor bridge
Free electron
Frequency:
Compensation
High
Low
Limitations of oscillators
Limiting elements in wide-band amplifiers
Modulated
Stability
256
Page
215a
215c
Discriminator
Slope detector.
CB
CC
CE
Puragraph
oscillator
29
86
70
68
101
227
143
14a
82
80
104
243
142
1626
165
166
170c
163
2096
172
160
161
163
166
160
17
226
167
Gain:
Paragraph
Page
157
155
77
Control, automatic
Current
64
Equalization.
152
64b
6O0
646
197
199
200
198
201
202
Power
Transducer
Voltage
Gating
circuits
ORandNOR
Series
Shunt
Germanium
crystal
151
77
72
77
210
213
214
211
215
218
17
19
366
42
1766
176o
174
174
114.
117
162
152
161
5
Hartley oscillator:
Series fed ._
Shunt fed
High frequency compensation
Series
165b
165 c
165a
2
Series-shunt
Shunt
History of transistors
Holes
24
Movement
Impedance coupling
Improper operating point
29
24
24
21
22
147
(effects)
145
106
1016(3)
Impurities:
Acceptor
__
Donor-
i$b(2)
21
186(1)
47
1516
21
54
j4g
205
212
220
229
62a
63a
49,53
70
72
75
55 63
170c
165
1946
194c
2 05
Independent variable.
Inductive coupling
Injection into configuration
Injection of oscillator frequency
Input:
Circuit equation:
CB
CC
CE
configuration
configuration
configuration..
__
__
Conductance
Differences between transistor and vacuum tube
g2
Pulse steering:
Diode
Transistor
Resistance
CB configuration
CC configuration.
CE configuration
Insulator
Interelement capacitance:
Collector-base
Collector-emitter
Emitter-base
Internal structure, atom
Internal structure, crystal
Interstage coupling:
Direct
RC
Transformer.. _
62c,
Ilia
63(;>
57,
nib
206
72, 113
75
66|
n3
n3
156
lg
103a
103b
103 c
107
107
108
g,j
j2
16c
19
U8
n9
116
llg
jjq
17
257
Junction:
Barrier
Diode
Photosensitive
Paragraph
Page
27
2d
223
25
28
31
6
PN
Reverse-bias
Lattice structure, crystals
Letter symbols
Linear operation
Load
Load
238
30
33
17c
19
245
105
PP"
1016(1)
102
72
100
line
60
(matched condition)
Low-frequency compensation
resistance
164
116,
163
160
72
606
9,
Mixer
Mixing
Modulation
H-13
9e
1906
23
12
199
25
190<
199
195
193
181, 191
207
202
181, 199
Frequency
_-
of positive charges
13
230
228
220
221
226
Molecule
Monostable operation (multivibrator)
12,
213
211
204
206
209
Amplitude....
Movement
1 15,
Multivibrator:
Astable
Bistable:
Nonsaturating
Saturating
---
Monostable
Neutralization
Noise factor
Noise level
Nonsaturating multivibrator
NPN
1536
151
---
HO
--
6
195
33
43c
186
19
113
10
207
39
49
189
22
68
1106
198
80
102,113
211
2086
173
1706
212
2096
172
171a
172a
226
168
--
transistor, operation
OR
100e,
NOR
Oscillators:
Amplitude-modulated
Basic circuit
---
Frequency
Injection
Modulated
Stability
Initial
and sustained
oscillations
Operating point
Regenerative feedback
1716
170d
1726
Selection of configuration
Temperature
effects
Blocking-
Clapp.Colpitts
Crystal
Hartley
Phaseshift..
258
183,192
1756
175a
177
176
178
165
229
226
167
166
167
166
165
168
186,201
172
171
175
173
178
Con
Oscillators
tin ued
TypesContinued
Paragraph
Page
Push-pull
Relaxation
Saturable core
Tickler coil
176c
180
182
l74o
179
175
181
183
170
179
62a
72
Weinbridge
Output
Circuit equations:
CB configuration
CC configuration
CE configuration
63a(2)
60, 53c
75
56,
64
Conductance:
CB
CC
CE
configuration...
configuration
63c, 70
configuration...
Resistance:
CB configuration
CC configuration
CE
70
62c,
_.
526, 70
646, 68
68
58, 64c, 68
52
63c,
configuration
Overdriving, amplifier
101
82
75,82
61,82
72,
80
80
67,77,80
77,
75,
61
104
Parameters:
Dependent variable
Hybrid
CB
CC
CE
I55<j
54
54
72
75
58
79
77
54
54, 80
54,82
152
165
161
1646
164
126
1276
161
160
47
47c,
configuration..
48
62
configuration
63
configuration
51o
66
65
47
47a, 68
476, 70
Conversion formulas
Typical values
Independent variable..
_.
Open-circuit
Short-circuit
Peaking
Phase:
_.
Distortion correction
Distortion, low frequency
Inverter
Balanced output
Two-stage
Unbalanced output
128,129
l27o
124
125
126
125
Relations, voltage:
CB
CC
CE
configuration
configuration
40
42
configuration
41
178
223
Shift oscillator
PNP transistor,
operation
Base lead current
Switching circuit
_
Point-contact diode.
Point-contact photosensitive device
Point-contact transistor
Power
Power
Power
amplifier, class
Two-stage direct-coupled
Three-stage direct-coupled
25
32
43d
186
26
222
222
130-133
102
56,606, 646
109
112
_
113
46
48
47
178
238
30
36
49
189
5
237
237
128
106
66, 72, 77
113
115
116
259
Properties of holes
Paragraph
Page
22
24
Proton
P-type semiconductor
Pulse characteristics:
Fall time
Pulse time
Rise time
Storage time
Pulse steering, input
..
--
193
193
193
193
116,163
36a
170a
180
118,160
42
165
121
181
120
146
I 44
74a
27
88
70
68
85
1876
193
Semiconductor
Semiconductor devices:
Four-layer diode
_
Junction
Photosensitive
Junction, single and double
Point-contact
Spacistor
Tetrode
Unijunction
Series compensation, high frequency
---
--
186
18
238
237
239
239
242
162
215
162
54, 82
161
218
188
H 00
*
60.
Hc
168
--
223c(l)
*7&
183
8
183
202
208
223c
165a
4 76, 70
165a
202
1856
Single-layer crystal
Slope detector..
94
82
80
243
30
1656
201
--
31
227
25
222
225
224
226
--
193
128
175
182
193
196
183
15c
Spacistor
187d
1876
187a
206
and construction,
24
194
1876
131-133
176c
Push-pull amplifier
Push-pull oscillator
Size
15
20e
187c
Pulsetime
RC-coupled
12
219
72 113
163
238
*
186
10
235
,
&0"
'"
225
239
77
80
87
89
Stability factor:
Current
Voltage^
260
--
Stabilization
Bias
Frequency
Temperature. __
Voltage
Static characteristic curves.-
Paragraph
Page
75
172
74
93
g6
167
51,62,63
Forward transfer
Output
101
100
lg5 c
1 g7 c
gg
9g
58 72 75
104
102
jgg
1 93
Structure:
Atoms
Crystals
Junction diode
Junction transistor
Point-contact diode
Point-contact transistor
Subatomic
9rf
12
16 r
ig
2d
6
6
2
2b
2c
particles.
12
15
97
no
Application
lg 5o
185b
1 866
lg5 e
188
igg
i 89
igg
Surge protection
Switching circuits:
Transistor
Unit step voltage
Temperature
stability
74
81
8g
239
gg
84
113
1776
gj
jjg
i7g
Tuned-base
1746
Tuned-collector...
174,.
125
gg
117
124
31
99
170
171
124
72
119
123
3g
102
4a
Tetrode transistor
Thermistor
Thermistor limitations
Three-stage preamplifier
Tickler coil feedback, crystal oscillator
224
Tone
controls
Transducer gain
Transformer-coupled amplifiers
Transformer-coupled volume control
Transistor:
Analysis
Application:
Low frequency
Low power
W-
_.
-
Arrangement (configuration)
__
'.."..'.'.
Common-base
Common-collector
3g a
43
44
43
39
jq
igg
jq
165
jq
3 86
34
Efficiency
g
170
g
170
g
g
g
137
52i 706
3
Input differences
Noise level
Output differences
and construction
Size
Useful life
Voltage requirements..
Compound-connected
Conductance
Functions
Amplification
Modulation
4b
3^
Common-emitter
Comparison with electron tube
X)emodulation
__
37
215
204
10
10
137
61, 82
6
42
232
220
261
Continued
Transistor
Functions Continued
Oscillation
Wave
Paragraph
Pw
208
3d
2a
225
shaping
History
Interelement capacitance
Large-signal operation
Material used in making
Resistance
103
I860
7
62,64c
8
1866
Switching circuits
Types:
Junction
,-
NPN
PNP
2c,
Point-contact...
Unijunction
Use
in
equipment
Triggered circuits:
Astable operation
Bistable operation
Eccles-Jordan
-
Types of substances:
Conductor
Dialectric
Insulator
Semiconductor
N-type
P-type
---
Unijunction transistor
UnilateralUation. . _
Bridge
life,
transistor
Variable, dependent
39
36
237
242
and independent
Voltage:
Amplification factor:
CB configuration
CC
CE
configuration
configuration.
Divider volume control
6,
190a
196
148
128, 129
112
199
199
202
199
208
146
126
115
15a
17
156
156
18
18
15c
19e
18
22
24
13a
127
226
153
153b
156
155a
185c
6
Unilateral device
10
189
20e
72,77
33
32
222
226
190c
193
190b
Monostable
Schmitt circuit
Tuned primary transformer
Two-stage phase inverter.,
Two-stage preamplifier
5
107
189
10
17
125
242
151
151
154
152
188
10
47
54
62c(l)
73
63c(2)
516
120a
75
59
120
64b
64b
55, 100c
77
77
65, 102
216a
232
40b
42b
416
93
46
48
47
98
94
96
98
99
Gain:
CB
CC
CE
configuration
configuration
configuration
CB configuration
CC configuration
CE configuration
Stabilization
262
--
Volume
controls:
Current divider
Requirements
Satisfactory arrangement
Transformer coupling
Unsatisfactory arrangement
Voltage divider
Weinbridge oscillator
Paragraph
Page
12M>
120
120
122
123
121
123
124
122
120a
Coupling circuits
Frequency limiting elements
120
179
159
179
Wide-band amplifier
Compensation for high-frequency loss
Compensation for low-frequency loss
121
161
165
1 12, 1 13,
166
162
163
161
1 15,
116,
163
160
160
263
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Unabridged, corrected edition. 240 schematic drawings, photographs, wiring diagrams, etc.
2 Appendices. Glossary. Index. 263pp. W2 x 9V4.
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THE PHYSICS OF MUSIC, Alexander Wood. Introduction for musicians to the physical aspect
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BIOGRAPHY OF SCIENTISTS
ISAAC NEWTON: A BIOGRAPHY, Louis Trenchard More. The definitive biography of Newton, his
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PIERRE CURIE, Marie Curie. Mme. Curie, Nobel Prize winner, creates a memorable portrait of
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THE BOOK OF MY LIFE (DE VITA PROPRIA LIBER), Jerome Cardan. The remarkable autobiography
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and other
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of electron
a minimal knowledge of physics and the theory
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is
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the
of
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essential information. The body of the book consists
amplifier fundamentals: parameters, equivalent
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