FQPF20 N 60

QFET
TM
FQPF20N06
60V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
15A, 60V, RDS(on) = 0.06 @VGS = 10 V

Low gate charge ( typical 11.5 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175C maximum junction temperature rating
D
!
"
! "
"
"
G!
GD S
Absolute Maximum Ratings

Symbol
VDSS
ID
TO-220F
FQPF Series
TC = 25C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
(Note 1)
FQPF20N06
60
Units
V
15
10.7
60
25
155
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
15
EAR
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
3.0
7.0
30
0.2
-55 to +175
mJ
V/ns
W
W/C
C
300
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
2001 Fairchild Semiconductor Corporation
Typ
--
Max
5.00
Units
C/W
--
62.5
C/W
Rev. A1. May 2001
FQPF20N06
May 2001
Symbol
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
60
--
--
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.07
--
V/C
IDSS
IGSSF
IGSSR
VDS = 60 V, VGS = 0 V
--
--
VDS = 48 V, TC = 150C
--
--
10
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
--
0.048
0.06
--
10
--
pF
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.5 A
gFS
Forward Transconductance
VDS = 25 V, ID = 7.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
450
590
--
170
220
pF
--
25
35
pF
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 10 A,
RG = 25
(Note 4, 5)
VDS = 48 V, ID = 20 A,
VGS = 10 V
(Note 4, 5)
--
20
--
45
100
ns
--
20
50
ns
--
25
60
ns
--
11.5
15
nC
--
--
nC
--
4.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
15
ISM
--
--
60
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 15 A
Drain-Source Diode Forward Voltage
--
--
1.5
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 20 A,
dIF / dt = 100 A/s
(Note 4)
--
43
--
ns
--
50
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 800H, IAS = 15A, VDD = 25V, RG = 25 , Starting TJ = 25C
3. ISD 20A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
Rev. A1. May 2001
FQPF20N06
Electrical Characteristics
FQPF20N06
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
10
ID, Drain Current [A]
Top :
10
10
175
25
Notes :
1. 250 s Pulse Test
2. TC = 25
Notes :
1. VDS = 25V
2. 250 s Pulse Test
-55
-1
10
-1
10
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
VGS = 10V
60
IDR, Reverse Drain Current [A]
R DS(ON) [m ],
Drain-Source On-Resistance
80
VGS = 20V
40
20
Note : TJ = 25
10
10
175
Notes :
1. VGS = 0V
2. 250 s Pulse Test
25
0
0
10
20
30
40
50
60
-1
10
0.2
0.6
1.2
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
400
Crss
V GS , Gate-Source Voltage [V]
Capacitance [pF]
1.0
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
10
800
0.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
1200
0.4
VDS = 30V
VDS = 48V
2
Note : ID = 20A
0
0
0
-1
10
10
Figure 5. Capacitance Characteristics
10
12
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1. May 2001
(Continued)
1.2
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
FQPF20N06
Typical Characteristics
1.5
1.0
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
Notes :
1. VGS = 10 V
2. ID = 10 A
0.5
150
0.0
-100
200
-50
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
20
10
Operation in This Area

is Limited by R DS(on)
ID , Drain Current [A]
ID , Drain Current [A]
15
1 ms
10
10 ms
100 ms
DC
10
Notes :
10
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
0
25
10
10
-1
10
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
175
Figure 10. Maximum Drain Current

vs. Case Temperature
D = 0 .5
10
0 .2
N otes :
1 . Z J C( t ) = 5 . 0 0 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
JC
(t), T h e rm a l R e s p o n s e
75
TC, Case Temperature []
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
Rev. A1. May 2001
FQPF20N06
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
Rev. A1. May 2001
FQPF20N06
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Rev. A1. May 2001
FQPF20N06
Package Dimensions
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.54TYP
[2.54 0.20]
9.40 0.20
2.76 0.20
4.70 0.20
0.35 0.10
Rev. A1. May 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOS
EnSigna
FACT
FACT Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SLIENT SWITCHER
SMART START
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
UltraFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2

FQPF20 N 60

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QFET

These N-Channel enhancement mode power field effect

15A, 60V, RDS(on) = 0.06 @VGS = 10 V

Absolute Maximum Ratings

TC = 25C unless otherwise noted

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

Thermal Resistance, Junction-to-Ambient

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -25 V, VDS = 0 V

Zero Gate Voltage Drain Current

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

ID, Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR, Reverse Drain Current [A]

ID, Drain Current [A]

Ciss = Cgs + Cgd (Cds = shorted)

V GS , Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2001 Fairchild Semiconductor Corporation

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A1. May 2001

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

Operation in This Area

ID , Drain Current [A]

ID , Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current