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QFET

TM

FQPF20N06
60V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect


transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.

15A, 60V, RDS(on) = 0.06 @VGS = 10 V


Low gate charge ( typical 11.5 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175C maximum junction temperature rating

D
!
"

! "
"
"

G!
GD S

Absolute Maximum Ratings


Symbol
VDSS
ID

TO-220F

FQPF Series

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)

IDM

Drain Current

- Pulsed

(Note 1)

FQPF20N06
60

Units
V

15

10.7

60

25

155

mJ

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

15

EAR

Repetitive Avalanche Energy


Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

3.0
7.0
30
0.2
-55 to +175

mJ
V/ns
W
W/C
C

300

dv/dt
PD
TJ, TSTG
TL

(Note 3)

- Derate above 25C


Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case

RJA

Thermal Resistance, Junction-to-Ambient

2001 Fairchild Semiconductor Corporation

Typ
--

Max
5.00

Units
C/W

--

62.5

C/W

Rev. A1. May 2001

FQPF20N06

May 2001

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

60

--

--

BVDSS
/ TJ

Breakdown Voltage Temperature


Coefficient

ID = 250 A, Referenced to 25C

--

0.07

--

V/C

IDSS
IGSSF
IGSSR

VDS = 60 V, VGS = 0 V

--

--

VDS = 48 V, TC = 150C

--

--

10

Gate-Body Leakage Current, Forward

VGS = 25 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -25 V, VDS = 0 V

--

--

-100

nA

2.0

--

4.0

--

0.048

0.06

--

10

--

pF

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 7.5 A

gFS

Forward Transconductance

VDS = 25 V, ID = 7.5 A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

--

450

590

--

170

220

pF

--

25

35

pF

ns

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 30 V, ID = 10 A,
RG = 25
(Note 4, 5)

VDS = 48 V, ID = 20 A,
VGS = 10 V
(Note 4, 5)

--

20

--

45

100

ns

--

20

50

ns

--

25

60

ns

--

11.5

15

nC

--

--

nC

--

4.5

--

nC

Drain-Source Diode Characteristics and Maximum Ratings


IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

15

ISM

--

--

60

VSD

Maximum Pulsed Drain-Source Diode Forward Current


VGS = 0 V, IS = 15 A
Drain-Source Diode Forward Voltage

--

--

1.5

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 20 A,
dIF / dt = 100 A/s

(Note 4)

--

43

--

ns

--

50

--

nC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 800H, IAS = 15A, VDD = 25V, RG = 25 , Starting TJ = 25C
3. ISD 20A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQPF20N06

Electrical Characteristics

FQPF20N06

Typical Characteristics

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V

10

ID, Drain Current [A]

ID, Drain Current [A]

Top :

10

10

175
25

Notes :
1. 250 s Pulse Test
2. TC = 25

Notes :
1. VDS = 25V
2. 250 s Pulse Test

-55

-1

10
-1
10

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

100

VGS = 10V
60

IDR, Reverse Drain Current [A]

R DS(ON) [m ],

Drain-Source On-Resistance

80

VGS = 20V

40

20
Note : TJ = 25

10

10

175

Notes :
1. VGS = 0V
2. 250 s Pulse Test

25

0
0

10

20

30

40

50

60

-1

10

ID, Drain Current [A]

0.2

0.6

1.2

1.4

12

Ciss = Cgs + Cgd (Cds = shorted)


Coss = Cds + Cgd
Crss = Cgd

Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz

Ciss

400

Crss

V GS , Gate-Source Voltage [V]

Capacitance [pF]

1.0

Figure 4. Body Diode Forward Voltage


Variation vs. Source Current
and Temperature

10

800

0.8

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.


Drain Current and Gate Voltage

1200

0.4

VDS = 30V
VDS = 48V

2
Note : ID = 20A

0
0

0
-1
10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2001 Fairchild Semiconductor Corporation

10

12

10

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A1. May 2001

(Continued)

1.2

2.5

2.0

1.1

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

FQPF20N06

Typical Characteristics

1.5

1.0

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

Notes :
1. VGS = 10 V
2. ID = 10 A

0.5

150

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation


vs. Temperature

Figure 8. On-Resistance Variation


vs. Temperature

20

10

Operation in This Area


is Limited by R DS(on)

ID , Drain Current [A]

ID , Drain Current [A]

15

1 ms
10

10 ms

100 ms
DC

10

Notes :

10

1. TC = 25 C
o

2. TJ = 175 C
3. Single Pulse
-1

0
25

10

10

-1

10

10

10

50

VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

100

125

150

175

Figure 10. Maximum Drain Current


vs. Case Temperature

D = 0 .5
10

0 .2
N otes :
1 . Z J C( t ) = 5 . 0 0 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )

0 .1
0 .0 5

10

0 .0 2

-1

PDM

0 .0 1

t1

JC

(t), T h e rm a l R e s p o n s e

75

TC, Case Temperature []

t2

s in g le p u ls e

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQPF20N06

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

tr

td(on)

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2001 Fairchild Semiconductor Corporation

ID (t)
VDS (t)

VDD
tp

Time

Rev. A1. May 2001

FQPF20N06

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width


D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQPF20N06

Package Dimensions

3.30 0.10

TO-220F
10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1
+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.54TYP
[2.54 0.20]

9.40 0.20

2001 Fairchild Semiconductor Corporation

2.76 0.20

4.70 0.20

0.35 0.10

Rev. A1. May 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
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GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
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MICROWIRE
OPTOLOGIC

OPTOPLANAR
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POP
PowerTrench
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QS
QT Optoelectronics
Quiet Series
SLIENT SWITCHER
SMART START
Stealth

SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H2