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ICFAI Foundation for Higher Education, Hyderabad

Faculty of Science and Technology


First Semester, 2011-2012
Comprehensive, Electrical Science-I (ES208)
Date: 13-12-11

Duration: 20 Minutes

Name:

Max Marks: 20

ID No:

Instructions:

(i) Answer to Part-I must be provided in the question paper itself


(ii) Return back Part-I of the question paper in first Ten (20) mins.
PART-A (1.0X20=20M)

1.

A series circuit consists of a 4.7 k, a 12 k, and a 2.2 k resistor. The resistor that has the most
voltage drop is
[
]
a) 4.7 k
b) 12 k
c) 2.2 k
d) data insufficient

2.

What is the voltage drop across R2?

a) 3.5V
3.

b) 350mV

6.

b) filter

b) 3V

d) 145mV
c) rectifier

c) 4V

d) regulator

Find open circuit voltage (Voc) for the circuit shown below?

a) 2V
5.

c) 1.5V

In a power supply diagram, which block indicates a smooth dc output?


a) Transformer

4.

[
d) Lq2

d) 5V

Energy stored in the inductor is


a) Li2
b) Lp2

c) Lv

Super position theorem is not valid for


a) Linear response
b) Voltage response

c) Current response

[
]
d) Power response

7.

Maximum power is transferred only when load resistance is Equal to


[
]
a) Zero b) Source resistance c) Source conductance
d) Half of source resistance

8.

12V is applied to a circuit then the current flowing is 1mA. If 6V is applied to the same circuit,
what is the valve of current
[
]
a) 1mA
b) 0.5mA
c)1.5mA
d) cant be determined
Capacitor acts as a ______________ for steady state DC networks?
[
]
a) Short circuit
b) open circuit
c) Passive element
d) linear element

9.

10.

A voltage wave form V (t) =12t is applied across a 1H inductor for t>0 with the initial current
through it to be 0. The current through the inductor for t >0?
[
]
a) 6t 2
b) 24t
c) 12t3
d) 4t2

11.

Capacitor does not allow sudden changes in


a) Voltage
b) Current
c) Power

[
]
d) All the above

12.

Match the following


1) Over damped case
A) = n
2) Under damped case
B) < n
3) Critically damped case
C) > n
a) 1-A, 2-B , 3-C
b) 1-C, 2-B , 3-A
c) 1-C, 2-A , 3-B

d) 1-A, 2-C , 3-B

13.

The maximum power that a 12V DC source with an internal resistance of 2 can supply to a
resistive load is
[
]
a) 12w
b) 18w
c) 36w
d) 48w

14.

The dual of a parallel R-C network is a


a) Series RC network b) Series RL n/w c) parallel RC network

15.

Determine the voltage across the resistor

a) 0V
16.

b) 0.09V

[
]
d) parallel RL n/w
[

c) 0.2

d) 0.44

The non-ideal model for zener diode is?


a)

b)

[
c)

d)

17.

What kind of device is MOSFET?


[
]
a) Current control device b) Voltage control device c) Linear device d) Both a & c

18.

For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB?
[
]
a) 0.2 A
b) 200 mA
c) 200 A
d) 20.2 mA

19.

Why we use by-pass capacitor in small signal ac models


[
a) to increase the Voltage gain
b) to increase the emitter resistance
c) to change the operating point
d) all the above

20.

For a silicon CE configuration BJT operating in saturation region, the typical valves of VBE and
VCE are
[
]
a) 0.8V & 0.2V
b) 0.2V & 0.8V
c) 0.7V & 0.2V
d) 0.2V & 0.7V

ICFAI Foundation for Higher Education, Hyderabad


Faculty of Science and Technology
First Semester, 2011-2012
Comprehensive, Electrical Science-I(ES-208)
Date: 13-12-11

Duration: 2Hr 40 Minutes

Max Marks: 80

PART-B

1. Determine I, I1,I2 in the circuit shown below.

[4M]

2. Determine the value of RL for the circuit shown below for which Maximum Power is transferred to
the load. Also Determine the Value of Maximum Power.
[4M]

3.

(a) Find the equivalent resistance of the circuit shown below.

[4M]

(b) Define KCL and KVL.


4.

(a) Assuming D1 and D2 are ideal diodes. Find the current flowing in the diodeD1&D2 [4M]

(b) Draw the symbols of Diode, Zener Diode, NPN Transistor, N-channel MOSFET.
5.

(a) A transistor is connected in common emitter configuration. The collector supply is 8 V [4M]
and the voltage drop across a resistor RC of 800 W in the collector circuit is 0.5 V. If the current
gain factor () is 0.96, calculate the base current.
(b) Draw the characteristics of MOSFET in enhancement mode.

PART-C

6.

7.

(a) For the circuit shown in the figure, find current through 4 resistor using Nodal or Mesh
analysis.
[5M]

(b) Find the current I in the given circuit by superposition theorem.

[5M]

(a) Find current in 8 ohm resistor by Thevenins theorem.

[5M]

(b) A DC voltage of 100V is applied in the circuit shown in the figure below and the switch is
kept open. The switch K is closed at t=0. Find the complete expression for the current in inductor
for all time t.
[5M]

8.

(a) Explain the process of avalanche breakdown in a PN junction diode. How it differs from
zener breakdown.
[5M]
(b) Draw the VA (Volt-Ampere) characteristics of a junction diode (forward and reverse). Show
the Cut-in voltage value for diode and approximate values of reverse current.
[5M]

9.

(a) Draw the output waveform VO for circuit shown below.

[3M]

(b) Calculate the base current, collector current and collector to emitter voltage in the transistor

10.

circuit given. The transistor used is a silicon transistor which has = 0.99

[5M]

(c) Compare JFET with BJT and bring out the advantages of JFET.

[2M]

(a) Briefly explain need for Biasing circuit in Transistor and name different types of biasing
circuits.
[4M]
(b) Explain the importance of a Q-point stability for a BJT amplifier circuit. Discuss the
problems which may occur due to unstable Q-point.
[4M]

11.

(a) Determine Rin, Av, Ai and Ro for the RC coupled amplifier circuit given in figure.[6M]

(b) The following readings were obtained for an N-channel JFET at VGS=0V.
ID

[6M]

9.9

10

10

10

10.. .10.1

3.5

6 .15

(mA )
VDS
( volts)
Determine IDSS, VP for the JFET, from the above readings. Also Calculate
rds, (i) when VDS varies from 1 to 2 volts. (ii) When VDS varies from 5V to 15 volts.

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