Professional Documents
Culture Documents
Duration: 20 Minutes
Name:
Max Marks: 20
ID No:
Instructions:
1.
A series circuit consists of a 4.7 k, a 12 k, and a 2.2 k resistor. The resistor that has the most
voltage drop is
[
]
a) 4.7 k
b) 12 k
c) 2.2 k
d) data insufficient
2.
a) 3.5V
3.
b) 350mV
6.
b) filter
b) 3V
d) 145mV
c) rectifier
c) 4V
d) regulator
Find open circuit voltage (Voc) for the circuit shown below?
a) 2V
5.
c) 1.5V
4.
[
d) Lq2
d) 5V
c) Lv
c) Current response
[
]
d) Power response
7.
8.
12V is applied to a circuit then the current flowing is 1mA. If 6V is applied to the same circuit,
what is the valve of current
[
]
a) 1mA
b) 0.5mA
c)1.5mA
d) cant be determined
Capacitor acts as a ______________ for steady state DC networks?
[
]
a) Short circuit
b) open circuit
c) Passive element
d) linear element
9.
10.
A voltage wave form V (t) =12t is applied across a 1H inductor for t>0 with the initial current
through it to be 0. The current through the inductor for t >0?
[
]
a) 6t 2
b) 24t
c) 12t3
d) 4t2
11.
[
]
d) All the above
12.
13.
The maximum power that a 12V DC source with an internal resistance of 2 can supply to a
resistive load is
[
]
a) 12w
b) 18w
c) 36w
d) 48w
14.
15.
a) 0V
16.
b) 0.09V
[
]
d) parallel RL n/w
[
c) 0.2
d) 0.44
b)
[
c)
d)
17.
18.
For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB?
[
]
a) 0.2 A
b) 200 mA
c) 200 A
d) 20.2 mA
19.
20.
For a silicon CE configuration BJT operating in saturation region, the typical valves of VBE and
VCE are
[
]
a) 0.8V & 0.2V
b) 0.2V & 0.8V
c) 0.7V & 0.2V
d) 0.2V & 0.7V
Max Marks: 80
PART-B
[4M]
2. Determine the value of RL for the circuit shown below for which Maximum Power is transferred to
the load. Also Determine the Value of Maximum Power.
[4M]
3.
[4M]
(a) Assuming D1 and D2 are ideal diodes. Find the current flowing in the diodeD1&D2 [4M]
(b) Draw the symbols of Diode, Zener Diode, NPN Transistor, N-channel MOSFET.
5.
(a) A transistor is connected in common emitter configuration. The collector supply is 8 V [4M]
and the voltage drop across a resistor RC of 800 W in the collector circuit is 0.5 V. If the current
gain factor () is 0.96, calculate the base current.
(b) Draw the characteristics of MOSFET in enhancement mode.
PART-C
6.
7.
(a) For the circuit shown in the figure, find current through 4 resistor using Nodal or Mesh
analysis.
[5M]
[5M]
[5M]
(b) A DC voltage of 100V is applied in the circuit shown in the figure below and the switch is
kept open. The switch K is closed at t=0. Find the complete expression for the current in inductor
for all time t.
[5M]
8.
(a) Explain the process of avalanche breakdown in a PN junction diode. How it differs from
zener breakdown.
[5M]
(b) Draw the VA (Volt-Ampere) characteristics of a junction diode (forward and reverse). Show
the Cut-in voltage value for diode and approximate values of reverse current.
[5M]
9.
[3M]
(b) Calculate the base current, collector current and collector to emitter voltage in the transistor
10.
circuit given. The transistor used is a silicon transistor which has = 0.99
[5M]
(c) Compare JFET with BJT and bring out the advantages of JFET.
[2M]
(a) Briefly explain need for Biasing circuit in Transistor and name different types of biasing
circuits.
[4M]
(b) Explain the importance of a Q-point stability for a BJT amplifier circuit. Discuss the
problems which may occur due to unstable Q-point.
[4M]
11.
(a) Determine Rin, Av, Ai and Ro for the RC coupled amplifier circuit given in figure.[6M]
(b) The following readings were obtained for an N-channel JFET at VGS=0V.
ID
[6M]
9.9
10
10
10
10.. .10.1
3.5
6 .15
(mA )
VDS
( volts)
Determine IDSS, VP for the JFET, from the above readings. Also Calculate
rds, (i) when VDS varies from 1 to 2 volts. (ii) When VDS varies from 5V to 15 volts.