EC 6304 Electronic Circuits I

III Semester
UNITI

BIASING OF DISCRETE BJT AND MOSFET

PART A
1. Define - Stability Factor.
[R4, May/June 2012], [R8, Nov/Dec 2009], [R8, Apr/May 2010], [R8, May/June 2012]
2. Compare bias stabilization and compensation techniques.

[R8, Nov/Dec 2011]

3. What is the condition for thermal stability?

[R4, Nov/Dec 2007]

4. What are the different methods of biasing JFET?

[R8, May/June 2012]

5. What are the types of transistor biasing?

[R8, Nov/Dec 2011]

6. Draw the single stage self biased circuit using pnp transistor.

[R8, Apr/May 2011]

7. List the advantages of self bias.

[R4/7, Nov/Dec 2012]

8. Draw the fixed bias and the self bias circuits.

9.

[R8, Nov/Dec 2009], [R4, May/Jun 2007]

What is the need for biasing in transistor amplifier?

[R8,

Apr/May 2011]
10. What is reverse saturation current?

[R4, May/June 2012]

11. Why is capacitive coupling used to connect a signal source to an amplifier? [R4, Nov/Dec 2007]
12. Calculate the value of feedback resistor (Rs) required to self bias an N-channel JFET with
IDSS=40mA, VP = -10V and VGSQ = -5V.

[R8, Apr/May 2010]

13. What is DC load line? How is Q point plotted on the DC load line?

[R4/7, Nov/Dec 2012]

14. For the circuit shown in the figure, determine the operating point with = 100.
[R4, Apr/May 2008]
Vcc=10V

IB

4 k ohm

1kohm

IC

PART B
1. Explain fixed biasing in BJT and FET. Explain the procedure for locating operating point on the
characteristic curves.
DEPARTMENT OF ECE

(16) [R8, May/June 2012]

REVANTH KUMAR

EC 6304 Electronic Circuits I

III Semester

2. Explain the fixed bias method and derive an expression for the stability factor.

(8)

[R8, Nov/Dec 2009] [R8, Apr/May 2010]

3. The following circuit has VCC = 20V, RC = 2K , = 50, VBE = 0.2V, R1 = 100K,
RE = 100. Calculate IB, VCE, IC and the Stability Factor S.

(16) [R8, Nov/Dec 2011]

Vcc
RC

R1

R2

RE
.

4. Draw a voltage divider bias BJT network. Derive expressions for I CQ and VCEQ and describe the
method of drawing the dc load line on the output characteristics of transistor.

(16)

[R8, May/June 2012]

5. Explain the voltage divider bias method and derive an expression for the stability factor.

(8)

[R8, Apr/May 2010]

6. For the following circuit find the Q-point if VCC = 15V and = 100; VBE = 0.7V.
Vcc

(10)

[R8, Nov/Dec 2009]

4.3 k

100 k

100 k

6.8 k
.

7. A silicon transistor with = 49 is used in self bias arrangement with VCC = 5V, RE = 1Kohms and
IE = 1mA. Find the values of R1 and R2 such that the stability factor does not exceed 5. (10)
[R4/7, Nov/Dec 2012]
8. In an N-channel JFET, biased by potential divider method, the operating point has to be at I DSS =
12mA. If VDD = 12V, R1 = 20K and R2 = 10K , RD =1.2K and VP= -4V. Find the values of
ID, VGS, VG, VDS and VS.

(16) [R4/7, Nov/Dec 2012]

9. Calculate the operating point for the following circuit.

DEPARTMENT OF ECE

REVANTH KUMAR

(6) [R8, Apr/May 2011]

EC 6304 Electronic Circuits I

III Semester
V c c = 1 5 V

2 0 0

o h m

k o h m

=5
000 o h

10. For the following circuit calculate VCE and IC, where = 100 for the silicon transistor.
.

[R4, May/June 2012]

11. Derive the expression of stability factor for collector feedback amplifier.(10)[R8, Apr/May 2011]
12. Explain the circuit that uses a diode to compensate the changes in VBE and in ICO.

(12)

[R8, Apr/May 2010]

13. Explain the operation of thermistor compensation.

(4) [R8, Apr/May 2010]

14. Explain the various techniques of stabilization of Q-point in a transistor. (16)

[R4, May/June 2012],[R8, Nov/Dec 2009]
15. Explain the factors on which an amplifier needs to be stabilized.

(6) [R4/7, Nov/Dec 2012]

16. With the help of neat diagram, explain the methods used in biasing the FET and MOSFET.

(16) [R8,
Nov/Dec 2011]
17. (i) Define - Stability Factor

(2) [R8, Apr/May 2011]

(ii) The pnp transistor in the following circuit has = 50. Find the values of RC to obtain
Vc = 5V. What happens if the transistor is replaced with another transistor = 100?

DEPARTMENT OF ECE

REVANTH KUMAR

(14)

EC 6304 Electronic Circuits I

III Semester

.
UNITII
BJT AMPLIFIERS
PART A
1. Define h-parameters

[R4, May/June 2007]

2. Write the voltage gain equation for CE configuration including source resistance.
[R8, May/June 2012]
3. What is AC load line? How is Q point plotted on the AC load line?
4. Why are common emitter amplifiers more popular?

[R8, Nov/Dec 2011]

5. How does the input impedance increase due to Darlington connection?

[R4, Apr/May 2008]

6. Two identical amplifiers having 10 dB gain each are cascaded. Calculate the output, if the input
is of 1mV (p-p).

[R8, Apr/May 2011]

7. What is the coupling schemes used in multistage amplifiers?

[R8, Apr/May 2010]

8. What is a cascade amplifier?

9. Determine the output voltage of a differential amplifier for the input voltages of 300 V and
240V. The differential gain of the amplifier is 5000 and the value of CMRR is 100.
[R8, Nov/Dec 2011]
10. If CMRR of an amplifier is 100 dB and differential gain is 1000, calculate the common mode
gain.

[R8, Apr/May 2011]

11. What is the need of constant current circuit in differential amplifier?

12. State Bisection theorem.
13. Define CMRR

[R4/7, Nov/Dec 2012]

[R8, Nov/Dec 2009], [R4, Nov/Dec 2007] [R4, May/Jun 2007]

14. Define Millers Theorem

DEPARTMENT OF ECE

[R4, May/June 2012]

[R4, May/June 2012], [R8, Apr/May 2010]

REVANTH KUMAR

EC 6304 Electronic Circuits I

III Semester
PART B

1. Derive the expression for

a) Current gain,
b) Voltage gain,
c) Input impedance and
d) Output admittance.
of a small signal transistor amplifier in terms of h parameters.

(12) [R8, Apr/May 2010]

2. Explain the voltage swing limitations for a common emitter amplifier configuration.
3. A CC amplifier is fed with the voltage source Vs of internal resistance R s = 800. The load
resistance RL = 1600. The CE hybrid parameters are hie = 1000; hre = 2.2 x 10-4;

hfe = 55;

hoe = 23 A/V. Compute voltage gain, current gain, input resistance, output resistance using
approximate analysis.

(8) [R8, May/June 2012]

4. Draw the small signal hybrid model of CE amplifier and derive the expression for its A I, AV, RI,
RO.

(16) [R8, May/June 2012]

5. Compare CB, CE and CC amplifiers and state their applications.

(8) [R8, Nov/Dec 2011],[R4, May/June 2012], [R8, Nov/Dec 2009] [R8, Apr/May 2010]
6. Consider a single stage CE amplifier with RS = 1K and RL = 1.2K. Calculate Ai, Ri, AV,
power gain and Ro if hie = 1.1K, hre = 2.5x10-4, hfe = 50 and hoe = 25 A/V.

(8)
[R8, Nov/Dec 2011]

7. For the following circuit, find the voltage gain when the capacitance is connected across R E and
when capacitance is not connected across RE.

(16) [R8, Apr/May 2011]

RB

RC

C
RL

RE
.
.

8. For the CC transistor amplifier circuit, find the expressions for input impedance and voltage
gain. Assume suitable model for the transistor.

DEPARTMENT OF ECE

REVANTH KUMAR

EC 6304 Electronic Circuits I

III Semester
(16) [R8, Nov/Dec 2009]

9.

(i) Describe the method to increase the input resistance using Darlington connection.

(8)

(ii) Define CMRR

(4)

(iii) Write short notes on multistage amplifiers.

(4) [R8, Apr/May 2011]

10. Explain the operation of a Darlington emitter follower and also derive an expression for its
performance measures.

(16) [R4, May/June 2012]

11. Explain the boot strapped Darlington emitter follower with circuit diagram. (8)
[R8, May/June 2012]
12. Explain the operation of emitter coupled differential amplifier.

(12)[R8, Apr/May 2010]

13. Explain the transfer characteristics of the differential amplifier.

(4) [R8, Apr/May 2010]

UNITIII
JFET AND MOSFET AMPLIFIERS
PART A
1. What is an amplifier?
2. Write the expression for basic current equation in MOSFET.
3. Why FET is called as a voltage controlled device?
4. Draw the equivalent circuit of MOSFET.
5. State atleast two reasons why a hybrid parameter model is used in small signal analysis.
6. Sketch the simple common source amplifier circuit of MOSFET.
7. What are the basic circuit configurations used in MOSFET?
8. Sketch the simple common gate amplifier circuit of MOSFET.
9. Compare the characteristics of small signal and large signal amplifiers.
10. Compare the AC circuit characteristics of the CS, CG and CD.
11. State the general advantages of using JFET rather than BJT.
12. Draw the small signal equivalent circuit of JFET.
13. How does the body effect change the small signal equivalent circuit of MOSFET?
14. Write the applications of MOSFET.
15. Write the expression of small signal voltage gain and output resistance of the common gate
circuit.
16. What is the difference between MOSFET and PN junction FET?

DEPARTMENT OF ECE

REVANTH KUMAR

EC 6304 Electronic Circuits I

III Semester
PART-B

1. Draw the small signal hybrid model of common drain MOSFET amplifier and derive the
expression for Ai,Av,Ri,Rv.
2. Briefly explain about the small signal analysis of CS amplifier MOSFET?
3. With the neat sketch explain the principle of operation of cascode amplifier and also derive an
expression for its performance measures?
4. Write short notes on voltage swing limitations.
5. Briefly explain about the small signal analysis of JFET?
6. A dc analysis of the source-follower network of the following figure will result in VGSQ= -2.86
V and IDQ = - 4.56 mA.
(a) Determining gm.
(b) Find rd.
(c) Determine Zi.
(d) Calculate Zo with and without rd. Compare results.
(e) Determine Av with and without rd. Compare results.

DEPARTMENT OF ECE

REVANTH KUMAR

EC 6304 Electronic Circuits I

III Semester
UNITIV

FREQUENCY ANALYSIS OF BJT AND MOSFET AMPLIFIERS

PART A
1. Why are h parameters not used at high frequencies?

[R8, May/June 2012]

2. Write the expressions for gain bandwidth product for voltage and current. [R8, Apr/May 2010]
3. How is the high frequency gain of an amplifier limited?

[R4, May/June 2012]

4. Draw general frequency response curve of an amplifier.

[R4, Nov/Dec 2007], [R4, May/Jun 2007]
.

5. What is bandwidth of an amplifier?

[R8, Nov/Dec 2009],[R4, May/Jun 2007]

6. What is the effect of coupling capacitors on the bandwidth of the amplifier.[R8, Nov/Dec 2011]
7. Short circuit common emitter current gain of transistor is 25 at a frequency of 2 MHz if
f = 200KHz, calculate fT and hfe.

What is the bandwidth that can be obtained using BJT, if

the rise time of a BJT is 40 nano seconds?

[R8, Nov/Dec 2011]

8. What are the effects of emitter bypass capacitor on high frequency response?
[R4/7, Nov/Dec 2012]
9. What is meant by gain-bandwidth product?

[R4/7, Nov/Dec 2012] [R4, Apr/May 2008]

10. Calculate the amplification factor, of FET, if rd = 4K and gm = 4mA/V. [R8, Apr/May 2011]
11. Draw the high frequency model of MOSFET.

[R4, May/June 2012]

12. Two amplifiers having gain 20 dB and 40 dB are cascaded. Find the overall gain in dB.
[R8, Nov/Dec 2009]
13. Write the equation of overall upper and lower cut off frequencies of multistage amplifiers.
[R4, Apr/May 2008]
14. What is the bandwidth that can be obtained using BJT, if the rise time of a BJT is 40 ns?
.

[R8, May/ June 2012]

15. What is meant by amplifier rise time?

[R4, Nov/Dec 2007],[R8, Apr/May 2010]

PART B
1. Define alpha cutoff frequency.

(4) [R8, May/June 2012]

2. Explain the significance of cut off frequencies and gain bandwidth product of amplifier.
DEPARTMENT OF ECE

REVANTH KUMAR

(6)

EC 6304 Electronic Circuits I

III Semester
[R8, Nov/Dec 2011]

3. Explain the low frequency response and the high frequency response of an amplifier. (16)
[R8, Apr/May 2010]
4. Draw the high frequency hybrid model for a transistor in the CE configuration and explain the
significance of each component.

(12) [R8, May/June 2012]

5. Explain in detail with neat diagram frequency response of BJT amplifier. Discuss the
significance of cut off frequencies and band width of the amplifier.

(16) [R8, Nov/Dec 2011]

6. Using hybrid model of a CE amplifier derive the expression for its short circuit gain.

(16)

[R4, May/June 2012]

7. The following circuit has R = 100K, Rin = 420K, Cgs = Cgd = 1PF, gm = 4mA/V,
Rt = 3.33K. Find the mid band gain and upper 3 dB frequency, fH . (16) [R8, Apr/May 2011]
Cgs

Vin

Cgs

Rin

RL

gmVgs

.
8. Explain the operation of high frequency common source MOSFET amplifier with neat diagram.
Derive the expression for
(a) voltage gain
(b) input admittance
(c) input impedance
(d) output admittance

(16) [R8, Apr/May 2010]

9. Draw the high frequency equivalent circuit of MOSFET amplifier and derive all the parameters
related to its frequency response.

(16) [R4,

May/June 2012]
10. Explain the high frequency equivalent circuit of MOSFET and hence derive gain bandwidth
product for any one configuration.

(16) [R8,

Nov/Dec 2009]
11. Derive the expression for frequency response of multistage amplifier. (10) [R8, Nov/Dec 2011]

DEPARTMENT OF ECE

REVANTH KUMAR

EC 6304 Electronic Circuits I

III Semester

12. Explain the frequency response of multistage amplifiers. Calculate the overall upper and lower
cut off frequencies.

[R8, May/June 2012] (10) [R8, Nov/Dec 2009]

13. How does Rise and Sag time related to cut-off frequencies? Justify.
14. Explain the terms rise time and sag.

(8) [R8, May/June 2012]

(6) [R8, Nov/Dec 2009]

UNITV
IC MOSFET AMPLIFIERS
PART A
1. What are the three basic configurations of IC MOSFET amplifiers?
2. Describe the characteristics of CMOS CS amplifier.
3. How current sources are used to bias IC amplifiers.
4. What is IC biasing Current steering circuit using MOSFET?
5. What is the small signal behavior of an enhancement load?
6. Give the advantages of CMOS IC.
7. How does this enhancement load resemble a resistor?
8. What is the small signal behavior of an enhancement load?
PART B
1. Explain the working principle of a simple MOSFET differential amplifier with an active load.
2. Derive the expression of the differential-mode voltage gain, common mode voltage gain and
CMRR for a MOSFET differential amplifier.
3. Explain the working principle of a CMOS differential amplifier.
4. Explain the design of a PMOS and NMOS current sources to provide a specified bias current and
output resistance.
5. Explain in detail the MOSFET amplifiers with enhancement load and depletion load.

DEPARTMENT OF ECE

REVANTH KUMAR