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NV10P

LoM PROTECTION RELAY


THE COMPREHENSIVE SOLUTION FOR VOLTAGE AND
FREQUENCY PROTECTION
Application

The relay type NV10P can be typically used in HV, MV and LV distribution systems, on transformers or for
electrical machines.
It can be used for system decoupling, load shedding and loss of main (islanding) protection.

NV10P
PROTECTION RELAY

2xVTs
phase-phase

74TCS

BF

ARF

81O

81U

81R

59Uavg

27

27V1

59

59V2

59N

- Protective & control functions

DDI
NV10P
PROTECTION RELAY
59

27

U12, U23, U31

81O

59V2

81U

27V1

DDI

BF

UEC

59Uavg

27
27V1
59
59V2
59N
59Uavg
81O
81U
81R
BF
74TCS
DDI-OPEN
ARF

ARF

59N

NV10P - Flyer- 07 - 2013

Phase undervoltage
Positive sequence undervoltage
Phase overvoltage
Negative sequence overvoltage
Residual overvoltage
Average overvoltage
Overfrequency
Underfrequency
Frequency rate of change
Circuit breaker failure
Trip circuit supervision
Automatisms concerning the VTs positioning
Automatic reclosure
(opzional for pv plants)

Construction

Firmware updating

According to the hardware congurations, the protection relay


can be shipped in various case styles depending on the required
mounting options (ush, projecting mounting, rack or with separate operator panel) and with connections to the input signals
suitable for inductive VTs (screw terminals) or electronic sensors (RJ45 jacks).

Measuring inputs for inductive VTs or direct connection


Three phase voltage inputs with programmable nominal voltages
within range 50...130 V (UR = 100 V) or 200...520 V (UR = 400 V) and
one residual voltage input, with programmable nominal voltage
within range 50...130 V (UER =100 V).

Measuring inputs for electronic sensors


Three phase voltages, with 20 / 3 kV (primary) rated voltage;
the residual voltage is obtained by vector calculation from the
phase voltages

Output relays
Six output relays are available (two changeover, three make and
one break contacts); each relay may be individually programmed
as normal state (normally energized, de-energized or pulse) and
reset mode (manual or automatic).
A programmable timer is provided for each relay (minimum pulse
width). The user may program the function of each relay in accordance with a matrix (tripping matrix) structure.

Modular design

The use of ash memory units allows on-site rmware updating.

Communication
Multiple communication interfaces are implemented:
One RS232 local communication front-end interface for communication with ThySetter setup software
Two back-end interfaces for communication with remote monitoring and control systems by:
- RS485 port - ModBus RTU, IEC 60870-5-103 or DNP3 protocol,
- Ethernet port (RJ45 or optical ber) - ModBus/TCP protocol.

Programming and settings


All relay programming and adjustment operations may be performed through MMI (Keyboard and display) or using a Personal
Computer with the aid of the ThySetter software.
The same PC setup software is required to set, monitor and congure all Pro_N devices.
Two session level (User or Administrator) with password for sensible data access are provided.

MMI (Man Machine Interface)


The user interface comprises a membrane keyboard, a backlight
LCD alphanumeric display and eight LEDs.
The green ON LED indicates auxiliary power supply and self diagnostics, two LEDs are dedicated to the Start and Trip (yellow
for Start, red for Trip) and ve red LEDs are user assignable.

Self diagnostics

In order to extend I/O capability, the NV10 hardware can be customized through external auxiliary modules:
MRI - Output relays and LEDs
MID16 - Binary inputs
MCI - 4...20 mA converters
MPT - Pt100 probe inputs.

All hardware and software functions are repeatedly checked


and any anomalies reported via display messages, communication interfaces, LEDs and output relays.
Anomalies may refer to:
Hw faults (auxiliary power supply, output relay coil interruptions, MMI board...)
Sw faults (boot and run time tests for data base, EEPROM
memory checksum failure, data BUS,...)
Circuit breaker faults.

Metering
NV10 provides metering values for phase, residual voltages
and frequency, making them available for reading on a display
or to communication interfaces. Voltages are sampled 24 times
per period and the RMS value of the fundamental component is
measured using the DFT (Discrete Fourier Transform) algorithm
and digital ltering. The measured voltages can be displayed
with reference to nominal values or directly expressed in volts.
With DFT the RMS value some harmonic are also measured.

Event storage

Control and monitoring


Several predened functions are implemented:
Trip circuit supervision (74TCS)
Remote tripping
Automatic reclosure for photovoltaic plants (optional NV10P-ARF)
Circuit Breaker commands and diagnostic
User dened logic may be customized according to IEC 61131-3
standard protocol (PLC).

Binary inputs
Two binary inputs are available with programmable active state
(active-ON/active-OFF) and programmable timer (active to OFF/
ON or ON/OFF transitions).
Several presettable functions can be associated to each input.

Two set point profiles (A,B)


Two independent groups of settings are provided. Switching from
proles may be operated by means of MMI, binary input and communication.

Several useful data are stored for diagnostic purpose; the events
are stored into a non volatile memory.
They are graded from the newest to the older after the Events
reading command (ThySetter) is issued:
Sequence of Event Recorder (SER).
The event recorder runs continuously capturing in circular mode
the last three hundred events upon trigger of binary input/output.
Sequence of Fault Recorder (SFR).
The fault recorder runs continuously capturing in circular
mode the last twenty faults upon trigger of binary input/output
and/or element pickup (start-trip).
Trip counters.

Digital Fault Recorder (Oscillography)


Upon trigger of tripping/starting of each function or external signals, the relay records in COMTRADE format:
Oscillography with instantaneous values for transient analysis.
RMS values for long time periods analysis.
Logic states (binary inputs and output relays).
Note - A license for Digital Fault Recorder function is required, The records
are stored in nonvolatile memory

NV10P - Flyer- 07 - 2013

NV10P RELAYS WITH INDUCTIVE VTS INPUTS

L1
L2
L3
A

MT

Note:
VTs can be placed
upstream (preferably)
or downstream of the DDI

NV10P
PROTECTION RELAY

dn
da

B7

Raf(*)

(*) Antiferrorisonance

UE

B8

B1
UL1

B2
B3
B

DDI

59N

Note:
VTs can be placed upstream (preferably)
or downstream of the DDI

B4
B5

UL2

B6

UL3

81O

81U

59V2

27

27V1

59

BF

ARF

59Uavg

Voltage inputs - V connections VTs and residual voltage acquired with open delta VT

L1
L2
L3

L1
L2
L3

restrictive thresholds
enabled from external signal

N
dn

(*) Antiferrorisonance
NV10P
PROTECTION RELAY

da

NV10P
PROTECTION RELAY

B7
R (*)

B8

UE

binary input set as


f<-f> control

59N

B1
B2
B3
B4
B5
B6

B1
U12
81O

81U

B2
B3

59V2

U23
27

27V1

B4
B5

59Uavg

59

U31

B6
BF

U12
81O

81U

59V2

27

27V1

59

U23
U31
BF

ARF

59Uavg

ARF

DDI

DDI
Direct measure of LV phase-to-phase voltages
and residual voltage acquired with open delta VT in MV

Direct measurement of phase-phase voltage input and


f <-f> control enable by contact indicating the activation
of the 59N from a remote device

NV10P - Flyer- 07 - 2013

Measuring inputs for inductive VTs or direct connection


Three phase-to-phase voltage inputs (UR = 100 V) or 200...520 V
(UR = 400 V) from n. 2 VTs for NV10P-J... versions or LV direct
connection for NV10P-U...versions)
One residual voltage input (connected on the secondary staropen delta VT).

Measures
Three phase-to-phase voltages U12, U23, U31
Residual voltage UE
Average value of 3-phase voltages on 10 minutes with updates
every three seconds
Frequency f (measured on phase-to-phase voltages)
Positive sequence voltage U1 (measured on phase-to-phase
voltages) U1=(UL1+e+j120UL2+e-j120UL3)/3
where e-j120=-1/2-j3/2, ej120=-1/2+j3/2.
Negative sequence voltage U2 (measured on phase-to-phase
voltages)
U2 =(UL1+e-j120UL2+e+j120UL3)/3
where e-j120=-1/2-j3/2, ej120=-1/2+j3/2.

Binary inputs
The two binary inputs, in addition to traditional assignments, can
be programmed to:
Acquisition of CB state 52a or 52b (for Breaker Failure protection (BF) and ARF automatic reclosure function for photovoltaic plants)
f<-f> voltage enable, indicating activation by external contact function of 59N external device, or, with inverted logic for
future use contact indicating the presence / absence status of
the communication network).
Remote trip (external command)

PROTECTIVE FUNCTIONS
Undervoltage - 27
Three-phases undervoltage function with OR logic, based on the
RMS value of fundamental component of the three phase-tophase voltages, two denite time thresholds.

Overvoltage - 59
Three-phases overvoltage function with OR logic, based on the
RMS value of fundamental component of the three phase-tophase voltages, two denite time thresholds.

RMS ten minutes overvoltage - 59Uavg


Three-phases overvoltage function with OR logic, based on the
average value of the three phase-to-phase voltages on 10 minutes with refresh every 3 seconds, one denite time threshold.
U/Un
1.3

1.1

U>avg

0.9
Um

0.7

0.3
0.1
100

100

200

300

400

500

600 s

Funzione di massima tensione su 10 minuti (59Uavg)

Note - The description of 59Uavg element applies to the NV10P devices with
sw version 2.70 and following

Under and over frequency function with frequency measurement on the three phase voltages, two denite time thresholds.
Insensitivity to transient frequency less than or equal to 40 ms.
Operation in the 0,2 Un...1,15 Un input voltage and inhibition for
input voltages lower than 0,2 Un.
The second threshold of each protection is always active.
The rst threshold may be disabled by local control (enable / disable threshold by means of keyboard or communications program).
The rst threshold is enabled / disabled, respectively, in the absence / presence of the integrity of the communication network
(digital input set with inverted logic and f<-f> control enable
function or by means of IEC 61850 communication protocol).
For the trip of the rst threshold of each element one or more of
the following consensus can be enabled:
starting of the second residual overvoltage threshold of 59N
internal protection (ON programming of the f<&UE>>,
f>&UE>> parameter)
starting of the residual overvoltage threshold 59N acquired
from external contact with the binary input programmed as
f<-f> Control (ON programming of the f <& DIGIN, f>
& DIGIN parameter)
loss of communication network from external contact acquired by a binary input programmed as f<-f> Control and
inverted logic (ON programming of the f <& DIGIN, f> &
DIGIN parameter)
starting of the positive sequence element (27V1) (ON programming of the f<&27V1, f>&27V1 parameter)
starting of the negative sequence element (59V2) ((ON programming of the f<&59V2, f>&59V2 parameter)
starting of the undervoltage element (27) (ON programming
of the f<&U<, f>&U< parameter)
loss of communication network from Goose IEC 61850
message (ON programming of the f<&rete61850-KO,
f>&rete61850-KO parameter).

Residual overvoltage - 59N


Residual overvoltage, two denite time thresholds.

Positive sequence undervoltage - 27V1


Positive sequence undervoltage, with voltage measurement on
the three phase-to-phase voltages, one denite time threshold.

Negative sequence overvoltage - 59V2


Negative sequence overvoltage, with voltage measurement on
the three phase-to-phase voltages, one denite time threshold.

Breaker failure - BF
The starting of the circuit breaker failure protection occurs if both
the following conditions are active:
Start and trip of protective elements internal to the relay
(thresholds trip associated with the breaker failure protection)
or, if enabled, by the trip of external protections associated
with a binary input.
The state of the 52a and 52b auxiliary contacts of the circuit
breaker corresponds to the closed state.

VTs positioning

0.5

200

Under/over frequency - 81U and 81O

For static generators only (asynchronous and not self excited),


the VTs may be install downstream of the DDI; the protections
are disabled with DDI open (to avoid that the relay prevent closing of the DDI) the f >>, f<< and UE >> operate time are reduced
for an adjustable time after the closing of the DDI.

Automatic recloser for photovoltaic plants - ARF


Optional function.

NV10P - Flyer- 07 - 2013

t U<def

U< def

U 12, U 23, U 31
(phase-to-phase voltages
measured directly)

t U<def
T

U 12ORU 23ORU 31< U< def

t U<<def

U<< def

t U<<def
T
0

U 12ORU 23ORU 31< U<< def

t Uavg>

U> avg

t Uavg>
T

U 12avgORU 23avgORU 31avg U> avg

t U>>def

U>> def

t U>>def
T

U 12ORU 23ORU 31 U>> def

t f>def

f >> def

t f>def
T

f f>> def

t f<<def

f<< def

f > def

t f>def

f f> def

&

f< def

t f>def
T

t f<def
&

f < f< def

t f<def
T

CB OPEN COMMAND

t f<<def
T

f < f<< def

U 2 > def
f>&

U 2 U 2 def

f >&RES
f >&RES
0

U 1 < U 1 def
t UE>>RES

U E >> def

U E (residual voltage
measured directly)

Consenso f<-f>

Consenso f<-f>
P r esen z a Goo se

Remo t e t r ip
Remo t e t r ip

f>&-K
f>&-L

f<&RES

t UE>>RES
0

U E U E >> def

IN 1tOFF
restrictive thresholds enabled
for loss of communication network IN 1tOFF
0
T

f<&RES
0

f<&-K

TRIPPING M ATRIX
(LED+REL AYS)

U 1 < def

f<&-L
f< &

restrictive enabling thresholds


from starting 59N external contact
t UE>>def

Goose IEC61850

Binary input connected to remote trip external contact

t UE>>def
T
0

remote trip (Goose IEC61850)

Functional diagram for the NV10P protection interface with inductive VTs
NV10P - Flyer- 07 - 2013

NV10P RELAYS WITH ELECTRONIC SENSOR INPUTS


L1
L2
L3

NV10P
PROTECTION RELAY

59

27
P1

UL1
P2

59Uavg

U12, U23, U31

81O

59V2

81U

27V1

UL2

UL3
BF

ARF

DDI
UEC

59N

Voltage inputs - V-sensor connections and residual voltage calculated by means of vector sum

V-Sensor

Bottom view
21

Top view
61

D1

C2

M
10

F1

A4
A5

RX

F2
F3

A6

TX

F4
F5

A7

50

Sbarra

C1

A3

10
M

15

10

A1
A2

A8

Vite M10
80.0

A9

B1

A10
A11

B2
B3

A12
A13
A14
A15
A16
A17
A18
A19
A20
A21

B4
B5

L1

B6
B7
B8

L2
L3

A22

E1

The metal mounting structure


shall be linked to ground
by means of copper braid
or cable with section
not less than 4 mm2.
An efcient and unique
ground node must be made.

M4 screw

capacitive divider for


voltage-indicator lamps

Radius 35 mm

RJ45

Pin1

5m

L10085
Max 50 m

Connect to ground if not used

Pin:
1 GND
2 GND
3 GND
4 GND
5 VOUT6 VOUT+
7 +VCC
8 -VSS

Remove the relay auxiliary supply


before connecting or disconnecting the sensors
NV10P - Flyer- 07 - 2013

Measuring inputs for electronic sensors connection


Three phase-to-ground voltage inputs for V-Sensor or ThySensor.

Measures
Three phase-to-ground voltages UL1, UL2, UL3
Three phase-to-phase voltage U12, U23, U31 (calculated)
U12 =|UL1-UL2|, U23 =|UL2 -UL3|, U31=|UL3 -UL1|
Residual voltage UEC (calculated)
UEC =|UL1+UL2 +UL3|
Average value of 3-phase voltages on 10 minutes with updates
every three seconds
Frequency f (measured on phase-to-phase voltages)
Positive sequence voltage U1 (measured on phase-to-ground
voltages) U1=(UL1+e+j120UL2+e-j120UL3)/3
where e-j120=-1/2-j3/2, ej120=-1/2+j3/2.
Negative sequence voltage U2 (measured on phase-to-ground
voltages)
U2 =(UL1+e-j120UL2+e+j120UL3)/3
where e-j120=-1/2-j3/2, ej120=-1/2+j3/2.

Binary inputs
The two binary inputs, in addition to traditional assignments, can
be programmed to:
Acquisition of CB state 52a or 52b (for Breaker Failure protection (BF) and ARF automatic reclosure function for photovoltaic plants)
f<-f> voltage enable, indicating activation by external contact function of 59N external device, or, with inverted logic for
future use contact indicating the presence / absence status of
the communication network).
Remote trip (external command)

Residual overvoltage - 59N


Residual overvoltage, two denite time thresholds.

PROTECTIVE FUNCTIONS

Positive sequence undervoltage - 27V1

Undervoltage - 27
Three-phases undervoltage function with OR logic, based on the
RMS value of fundamental component of the three phase-tophase voltages, two denite time thresholds.

Overvoltage - 59
Three-phases overvoltage function with OR logic, based on the
RMS value of fundamental component of the three phase-tophase voltages, two denite time thresholds.

RMS ten minutes overvoltage - 59Uavg


Three-phases overvoltage function with OR logic, based on the
average value of the three phase-to-phase voltages on 10 minutes with refresh every 3 seconds, one denite time threshold.
U/Un
1.3

1.1

U>avg

Insensitivity to transient frequency less than or equal to 40 ms.


Operation in the 0,2 Un...1,15 Un input voltage and inhibition for
input voltages lower than 0,2 Un.
The second threshold of each protection is always active.
The rst threshold may be disabled by local control (enable / disable threshold by means of keyboard or communications program).
The rst threshold is enabled / disabled, respectively, in the absence / presence of the integrity of the communication network
(digital input set with inverted logic and f<-f> control enable
function or by means of IEC 61850 communication protocol).
For the trip of the rst threshold of each element one or more of
the following consensus can be enabled:
starting of the second residual overvoltage threshold of 59N
internal protection (ON programming of the f<&UE>>,
f>&UE>> parameter)
starting of the residual overvoltage threshold 59N acquired
from external contact with the binary input programmed as
f<-f> Control (ON programming of the f <& DIGIN, f>
& DIGIN parameter)
loss of communication network from external contact acquired by a binary input programmed as f<-f> Control and
inverted logic (ON programming of the f <& DIGIN, f> &
DIGIN parameter)
starting of the positive sequence element (27V1) (ON programming of the f<&27V1, f>&27V1 parameter)
starting of the negative sequence element (59V2) ((ON programming of the f<&59V2, f>&59V2 parameter)
starting of the undervoltage element (27) (ON programming
of the f<&U<, f>&U< parameter)
loss of communication network from Goose IEC 61850
message (ON programming of the f<&rete61850-KO,
f>&rete61850-KO parameter).

Positive sequence undervoltage, with voltage measurement on


the three phase-to-ground voltages, one denite time threshold.

Negative sequence overvoltage - 59V2


Negative sequence overvoltage, with voltage measurement on
the three phase-to-ground voltages, one denite time threshold.

Breaker failure - BF
The starting of the circuit breaker failure protection occurs if both
the following conditions are active:
Start and trip of protective elements internal to the relay
(thresholds trip associated with the breaker failure protection)
or, if enabled, by the trip of external protections associated
with a binary input.
The state of the 52a and 52b auxiliary contacts of the circuit
breaker corresponds to the closed state.

VTs positioning
For static generators only (asynchronous and not self excited),
the VTs may be install downstream of the DDI; the protections
are disabled with DDI open (to avoid that the relay prevent closing of the DDI) the f >>, f<< and UE >> operate time are reduced
for an adjustable time after the closing of the DDI.

0.9
Um

0.7
0.5
0.3

Automatic recloser for photovoltaic plants - ARF

0.1
200

100

100

200

300

400

500

600 s

Optional function.

Funzione di massima tensione su 10 minuti (59Uavg)

Note - The description of 59Uavg element applies to the NV10P devices with
sw version 2.70 and following

Under/over frequency - 81U and 81O


Under and over frequency function with frequency measurement on the three phase voltages, two denite time thresholds.
NV10P - Flyer- 07 - 2013

t U<def

U< def

U 12, U 23, U 31
(phase-to-phase
calculated voltages)

t U<def
T

U 12ORU 23ORU 31< U< def

t U<<def

U<< def

t U<<def
T
0

U 12ORU 23ORU 31< U<< def

t Uavg>

U> avg

t Uavg>
T

U 12avgORU 23avgORU 31avg U> avg

t U>>def

U>> def

t U>>def
T

U 12ORU 23ORU 31 U>> def

t f>def

f >> def

UL1, UL2, UL3


(phase-to-ground voltages
measured directly)

t f>def
T

f f>> def

t f<<def

f<< def

t f<<def

f > def

t f>def

f f> def

&

f< def

t f>def
T

t f<def
&

f < f< def

t f<def
T

U 2 > def
f>&

U 2 U 2 def

f >&RES
f >&RES
0

U 1 < U 1 def
t UE>>RES

U E >> def

U EC
(calculated residual voltage)

Consenso f<-f>

Consenso f<-f>
P r esen z a Goo se

Remo t e t r ip
Remo t e t r ip

f<&RES
0

f<&-K
f<&-L

f< &
IN 1tOFF
0

restrictive enabling thresholds


from starting 59N external contact
t UE>>def

Goose IEC61850

Binary input connected to remote trip external contact


Remote trip (Goose IEC61850)

Functional diagram for the NV10P protection interface with electronic sensors
8

f>&-L

IN 1tOFF
restrictive thresholds enabled
for loss of communication network

f>&-K

f<&RES

t UE>>RES
0

U E C U E >> def

TRIPPING M ATRIX
(LED+REL AYS)

U 1 < def

NV10P - Flyer- 07 - 2013

t UE>>def
T
0

CB OPEN COMMAND

f < f<< def

SPECIF ICAT IONS


GENERAL

INPUT CIRCUITS

Mechanical data

Auxiliary power supply Uaux

Mounting: ush, projecting, rack or separated operator panel


Mass (ush mounting case)
2.0 kg

Insulation tests
Reference standards
High voltage test 50Hz
Impulse voltage withstand (1.2/50 s)
Insulation resistance

EN 60255-5
2 kV 60 s
5 kV
>100 M

Voltage dip and interruption


Reference standards

EN 61000-4-29

EMC tests for interference immunity


1 MHz damped oscillatory wave
Electrostatic discharge
Fast transient burst (5/50 ns)
Conducted radio-frequency elds
Radiated radio-frequency elds
High energy pulse
Magnetic eld 50 Hz
Damped oscillatory wave
Ring wave
Conducted common mode (0...150 kHz)

EN 60255-22-1
EN 60255-22-2
EN 60255-22-4
EN 60255-22-6
EN 60255-4-3
EN 61000-4-5
EN 61000-4-8
EN 61000-4-12
EN 61000-4-12
EN 61000-4-16

1 kV-2.5 kV
8 kV
4 kV
10 V
10 V/m
2 kV
1 kA/m
2.5 kV
2 kV
10 V

Emission

Voltage inputs (inductive VTs or direct)


Reference voltage UR
100 V or 400 V selectable on order
Nominal voltage Un
50...130 V or 200...520 V selectable by sw
Permanent overload
1.3 UR
1s overload
2 UR
Rated consumption (for any phase)
0.5 VA

Residual voltage input (inductive VTs)


Reference voltage UER
Nominal voltage UEn
Permanent overload
1s overload
Rated consumption

100 V
50...130 V selectable by sw
1.3 UER
2 UER
0.5 VA

Voltage inputs (electronic sensors)


Rated secondary voltage (with Unp = 20/3 kV)
Connections

1.0 V
RJ45 socket

Rated primary voltage (electronic sensors)

Reference standards
EN 61000-6-4 (ex EN 50081-2)
Conducted emission 0.15...30 MHz
Class A
Radiated emission 30...1000 MHz
Class A

Climatic tests
Reference standards

Nominal value (range) 24...48 Vac/dc, 115...230 Vac/110...220 Vdc


Operative range (each one of the above nominal values) 19...60 Vac/dc
85...265 Vac/75...300 Vdc
Power consumption:
10 W (20 VA)
Maximum (energized relays, Ethernet TX)
15 W (25 VA)
Maximum (energized relays, Ethernet FX)

IEC 60068-x, ENEL R CLI 01, CEI 50

Mechanical tests
Reference standards

EN 60255-21-1, 21-2, 21-3

Safety requirements
Reference standards
Pollution degree
Reference voltage
Overvoltage
Pulse voltage
Reference standards
Protection degree:
Front side
Rear side, connection terminals

EN 61010-1
3
250 V
III
5 kV
EN 60529
IP52
IP20

Environmental conditions
Ambient temperature
Storage temperature
Relative humidity
Atmospheric pressure

-25...+70 C
-40...+85 C
10...95 %
70...110 kPa

Certifications
Product standard for measuring relays
CE conformity
EMC Directive
Low Voltage Directive
Type tests

EN 50263
89/336/EEC
73/23/EEC
IEC 60255-6

COMMUNICATION INTERFACES
Local PC RS232
19200 bps
Network:
1200...57600 bps
RS485
100 Mbps
Ethernet 100BaseT
Protocol
ModBus RTU/IEC 60870-5-103/DNP3, TCP/IP

Rated primary voltage Unp


Permanent overload

20/3 kV
1.8

Binary inputs
Quantity
Type
Max permissible voltage
Max consumption, energized

2
dry inputs
19...265 Vac/19...300 Vdc
3 mA

OUTPUT CIRCUITS
Output relays K1...K6
Quantity
6
changeover (SPDT, type C)
Type of contacts K1, K2
make (SPST-NO, type A)
Type of contacts K3, K4, K5
break (SPST-NC, type B)
Type of contacts K6
Nominal current
8A
Nominal voltage/max switching voltage
250 Vac/400 Vac
Breaking capacity:
50 W
Direct current (L/R = 40 ms)
1250 VA
Alternating current ( = 0,4)
Make
1000 W/VA
Short duration current (0,5 s)
30 A

LEDs
Quantity
ON/fail (green)
Start (yellow)
Trip (red)
Allocatable (red)

8
1
1
1
5

GENERAL SETTINGS
Rated values
Relay nominal frequency (f n)
50, 60 Hz
Relay nominal voltage (Un)
50...130 V or 200...520 V
Relay nominal voltage phase-to-ground (En )[1]
En = Un/3
Relay residual nominal voltage (direct measure) (UEn) 50...130 V
Relay residual nominal voltage (calculated) (UECN)=Un 3 50...130 V
Line VT primary nominal voltage (Unp)
50 V..500 kV
Residual primary nominal voltage (phase-to-phase) 3 (UEnp)
50 V...500 kV
Note [1] Electronic sensor version only

NV10P - Flyer- 07 - 2013

Binary input timers


ON delay time (IN1 tON, IN2 tON)
OFF delay time (IN1 tOFF, IN2 tOFF)
Logic

Overvoltage - 59 (inductive VTs)


0.00...100.0 s
0.00...100.0 s
Active-ON/Active-OFF

Relay output timers


Minimum pulse width

0.000...0.500 s

PROTECTIVE FUNCTIONS
Undervoltage - 27 (inductive VTs)
Common conguration:
27 Operating logic (Logic27)

AND/OR

U< Element
U< Curve type (U<Curve)

DEFINITE
INVERSE [1]

Denite time
27 First threshold denite time (U <def)
U<def Operating time (t U<def )
Inverse time
27 First threshold inverse time (U <inv)
U<inv Operating time (t U<inv)
U<< Element
Denite time
27 Second threshold denite time (U <<def)
U<<def Operating time (t U<<def )

0.05...1.10 U n
0.03...100.0 s
0.05...1.10 U n
0.10...100.0 s

0.05...1.10 U n
0.03...100.0 s

DEFINITE
INVERSE [1]

Denite time
59 First threshold denite time (U >def)
U>def Operating time (t U> def )
Inverse time
59 First threshold inverse time (U >inv)
U>inv Operating time (t U>inv)

0.50...1.50 U n
0.10...100.0 s

U>> Element
Denite time
59 Second threshold denite time (U >>def)
U>>def Operating time (t U>> def )

0.50...1.50 U n
0.03...100.0 s

0.50...1.50 U n
0.03...100.0 s

Note [1] - The mathematical formula for INVERSE curves is:


t = 0.5 t U>inv / [(U/U >inv)-1] where:
t = trip time (in seconds)
t U> inv = operating time setting (in seconds)
U = input voltage
U>inv = threshold

Overvoltage - 59 (electronic sensors)


U ph-ph /U ph-n
AND/OR
DEFINITE
INVERSE [1]

Denite time
59 First threshold denite time (U >def)
U>def Operating time (t U> def )
Inverse time
59 First threshold inverse time (U >inv)
U>inv Operating time (t U>inv)

0.50...1.50 U n /E n
0.10...100.0 s

0.05...1.10 U n /E n
0.03...100.0 s

U>> Element
Denite time
59 Second threshold denite time (U >>def)
U>>def Operating time (t U>> def )

0.50...1.50 U n /E n
0.03...100.0 s

0.05...1.10 U n /E n
0.10...100.0 s

Note 1: With U ph-ph setting all threshold are in p.u. U n


With U ph-n setting all threshold are in p.u. E n

Common conguration:
Voltage measurement type for 27 (Utype27) [1]
27 Operating logic (Logic27)

U ph-ph /U ph-n
AND/OR

U< Element
U< Curve type (U<Curve)

DEFINITE
INVERSE [2]

U<< Element
Denite time
27 Second threshold denite time (U <<def)
0.05...1.10 U n /E n
U<<def Operating time (t U<<def )
0.03...100.0 s
Note [1] - With U ph-ph setting all threshold are in p.u. U n
With U ph-n setting all threshold are in p.u. E n
Note [2] - The mathematical formula for INVERSE curves is:
t = 0.75 t U<inv / [1-(U/U <inv)] where:
t = trip time (in seconds)
t U< inv = operating time setting (in seconds)
U = input voltage
U<inv = threshold

Positive sequence undervoltage - 27V1 (inductive VTs)


0.05...1.10 Un
0.07...100.0 s

Positive sequence undervoltage - 27V1 (electronic


sensor)
U1< Element
27V1 First threshold denite time (U 1<def)
27V1 Operating time (t U1<def )

U> Element
U> Curve type (U>Curve)

U> Element
U> Curve type (U>Curve)

Undervoltage - 27 (electronic sensors)

U1< Element
27V1 First threshold denite time (U 1<def)
27V1 Operating time (t U1<def )

AND/OR

Common conguration:
Voltage measurement type for 59 (Utype59) [1]
59 Operating logic (Logic59)

Note [1] - The mathematical formula for INVERSE curves is:


t = 0.75 t U<inv / [1-(U/U <inv)] where:
t = trip time (in seconds)
t U< inv = operating time setting (in seconds)
U = input voltage
U<inv = threshold

Denite time
27 First threshold denite time (U <def)
U<def Operating time (t U<def )
Inverse time
27 First threshold inverse time (U <inv)
U<inv Operating time (t U<inv)

Common conguration:
59 Operating logic (Logic59)

0.05...1.10 E n
0.07...100.0 s

0.50...1.50 U n /E n
0.03...100.0 s

Note [1] - The mathematical formula for INVERSE curves is:


t = 0.5 t U>inv / [(U/U >inv)-1] where:
t = trip time (in seconds)
t U> inv = operating time setting (in seconds)
U = input voltage
U>inv = threshold

RMS ten minutes overvoltage - 59Uavg [1] (inductive VTs)


Common conguration:
59Uavg Operating logic (Logic59Uavg)
Uavg> Element
Denite time
59Uavg First threshold denite time (U avg >def)
Time delay (t Uavg> def )

AND/OR

0.50...1.50 U n
0...1000 s

Note [1] - based on the average value of the three phase-to-phase voltages on
10 minutes with refresh every 3 seconds.

RMS ten minutes overvoltage - 59Uavg [1] (electronic sensors)


Common conguration:
U ph-ph /U ph-n
Voltage measurement type (Utype59Uavg)
59Uavg Operating logic (Logic59Uavg)
AND/OR
Uavg> Element
Denite time
59Uavg First threshold denite time (U avg >def) 0.50...1.50 U n /E n
0...1000 s
Time delay (t Uavg> def )
Note [1] - based on the average value of the three phase-to-phase voltages on
10 minutes with refresh every 3 seconds.

10

NV10P - Flyer- 07 - 2013

Residual overvoltage - 59N (inductive VTs)


Common conguration:
Residual voltage measurement for 59N - direct/calculated
(3V0Type59N)
U E /U EC
59N Operation from 74VT external (74VText59N) OFF /Block

U E > Element
U E > Curve type (U E >Curve)

DEFINITE
INVERSE [1]
0.00...100.0 s

U E> Reset time delay (t UE>RES)


Denite time
59N First threshold denite time (U E >def)
U E>def Operating time (t UE >def)
Inverse time
59N First threshold inverse time (U E >inv)
U E>inv Operating time (t UE >inv)

U E >> Element
U E>> Reset time delay (t UE>>RES)
59N Second threshold denite time (U E >>def)
U E>>def Operating time (t UE >>def)
U E>>def reduced operating time (t cUE>>def)
t cUE>>def activation time (t atcUE >>def)

0.01...0.70 U En
0.07...100.0 s
0.01...0.50 U En
0.10...100.0 s
0.00...100.0 s
0.01...0.70 U En
0.07...100.0 s
0.07...10.00 s
1...60 s

Note [1] - The mathematical formula for INVERSE curves is:

t = 0.5 t UE>inv / [(U/U E>inv)-1]


where:
t = trip time (in seconds)
t UE> inv = operating time setting (in seconds)
UE = residual input voltage
U E> inv = threshold

Residual overvoltage - 59N (electronic sensor)


Common conguration:
U EC
Residual voltage measurement for 59N - (3V0Type59N)
59N Operation from 74VT external (74VText59N) OFF /Block

U E > Element
U E > Curve type (U E >Curve)

DEFINITE
INVERSE [1]
0.00...100.0 s

U E> Reset time delay (t UE>RES)


Denite time
59N First threshold denite time (U E >def)
U E>def Operating time (t UE >def)
Inverse time
59N First threshold inverse time (U E >inv)
U E>inv Operating time (t UE >inv)

U E >> Element
U E>> Reset time delay (t UE>>RES)
59N Second threshold denite time (U E >>def)
U E>>def Operating time (t UE >>def)
U E>>def reduced operating time (t cUE>>def)
t cUE>>def activation time (t atcUE >>def)

0.01...0.70 U En
0.07...100.0 s
0.01...0.50 U En
0.10...100.0 s
0.00...100.0 s
0.01...0.70 U En
0.07...100.0 s
0.07...10.00 s
1...60 s

Note [1] - The mathematical formula for INVERSE curves is:


t = 0.5 t UE>inv / [(U EC/U E>inv)-1] where:
t = trip time (in seconds)
t UE> inv = operating time setting (in seconds)
UEC = calculated residual input voltage
U E> inv = threshold

0.01...0.50 Un
0.07...100.0 s

Negative sequence overvoltage - 59V2 (electronic


sensor)
U2> Element

0.01...0.50 En
0.07...100.0 s

Underfrequency - 81U
f< Element
Denite time
81U First threshold denite time (f<def)
0.800...1.000 fn
f<def Operating time (t f<def )
0.05...100.0 s
Voltage control
f< Control enable (f<&)
ON/OFF
f< Controlled by UE>> start (f<&UE>>)
ON/OFF
f< Controlled by binary input (f<&DIGIN)
ON/OFF
f< Controlled by 27V1 start (f<&27V1)
ON/OFF
f< Controlled by 59V2 start (f<&59V2)
ON/OFF
f< Controlled by U< start (f<&U<)
ON/OFF
f< Controlled by 61850 no link (f<&rete61850-KO)
ON/OFF
f<& Reset time delay (f<&RES)
0.00...200.0 s
f<< Element
Denite time
81U Second threshold denite time (f<<def)
f<<def Operating time (t f<<def )
f<<def reduced operating time (t cf<<def)
t cf<<def activation time (t atc<<def)

0.800...1.000 fn
0.05...100.0 s
0.07...10.00 s
1...60 s

f<<< Element
Denite time
81U Third threshold denite time (f<<<def)
f<<<def Operating time (t f<<<def )

0.800...1.000 fn
0.05...100.0 s

f<<<< Element
Denite time
81U Fourth threshold denite time (f<<<<def)
f<<<<def Operating time (t f<<<<def )

0.800...1.000 fn
0.05...100.0 s

Overfrequency - 81O
f> Element
Denite time
81O First threshold denite time (f>def)
1.000....1.200 fn
f>def Operating time (t f> def )
0.05...100.0 s
Voltage control
f> Control enable (f<&)
ON/OFF
f> Controlled by UE>> start (f>&UE>>)
ON/OFF
f> Controlled by binary input (f>&DIGIN)
ON/OFF
f> Controlled by 27V1 start (f>&27V1)
ON/OFF
f> Controlled by 59V2 start (f>&59V2)
ON/OFF
f> Controlled by U< start (f>&U<)
ON/OFF
f> Controlled by 61850 no link (f>&rete61850-KO)
ON/OFF
f>& Reset time delay (f>&RES)
0.00...200.0 s
f>> Element>
Denite time
81O Second threshold denite time (f>>def)
f>>def Operating time (t f>> def )
f>>def reduced operating time (t cf>>def)
t cf>>def activation time (t atcf >>def)

1.000....1.200 fn
0.05...100.0 s
0.07...10.00 s
1...60 s

Frequency rate of change - 81R

Negative sequence overvoltage - 59V2 (inductive VTs)


U2> Element
Denite time
59V2 First threshold denite time (U2 >def)
U2>def Operating time (t U2> def )

Denite time
59V2 First threshold denite time (U2 >def)
U2>def Operating time (t U2> def )

df> Element
Module/Positive/Negative
Operating mode (df >mode)
Denite time
81R First threshold denite time (df > def)
0.1...10.0 Hz/s
df > def Operating time (tdf > def)
0.00...100.0 s
df>> Element
Operating mode (df >>mode)
Module/Positive/Negative
Denite time
81R Second threshold denite time (df >> def)
0.1...10.0 Hz/s
df >> def Operating time (tdf >> def)
0.00...100.0 s
df>>> Element
Operating mode (df >>>mode)
Module/Positive/Negative
Denite time
81R Third threshold denite time (df >>> def)
0.1...10.0 Hz/s
df >>> def Operating time (tdf >>> def)
0.00...100.0 s

NV10P - Flyer- 07 - 2013

11

df>>>> Element
Operating mode (df >>>>mode)
Module/Positive/Negative
Denite time
81R Fourth threshold denite time (df >>>> def)
0.1...10.0 Hz/s
df >>>> def Operating time (tdf >>>> def)
0.00...100.0 s

Breaker failure - BF
BF Time delay (t BF)

0.06...10.00 s

Circuit Breaker supervision


Number of CB trips (N.Open)
CB max allowed opening time (t break >)

0...10000
0.05...1.00 s

METERING & RECORDING


Measured parameters
Direct:
Frequency
Input voltages
Residual voltage

f
U L1, U L 2 , U L 3
UE

Calculated:
Phase-to-phase voltages
U 12 , U 23 , U 31
Calculated residual voltage
U EC
Maximum voltage between U L1-U L 2 -U L 3
U Lmax
Average voltage between U L1-U L 2 -U L 3
UL
Average voltage between U 12 , U 23 , U 31
U Lavg
Positive sequence voltage
U1
Negative sequence voltage
U2
Third harmonic residual voltage
U E-3rd
Frequency rate of change
df/dt
Averages:
Voltage averages (refresh 3 s)
U L1avg , U L 2avg , U L 3avg
Maximum voltage between U L1avg , U L 2avg , U L 3avg U Lavgmax

Fault recording (SFR)


Number of faults
20
Recording mode
circular
Trigger:
Output relays of enabled protection or control element (OFF-ON)
IN1...INx
External trigger (binary inputs)
Data recorded:
0...10 9
Counter (resettable by ThySetter)
Date and time
Time stamp
tripped element
Cause
U L1r, U L2r, U L3r
Input voltages
Average voltages
U L1avgr, U L 2avgr, U L 3avgr
Residual voltages (measured and calculated)
U Er, U ECr
Positive sequence voltage
U 1r
Negative sequence voltage
U 2r
Frequency
fr
Frequency rate of change
df r
Binary inputs state
IN1, IN2...INx
Output relays state
K1...K6...K10
Fault cause info (operating phase)
L1, L2, L3

Digital Fault Recorder (Oscillography)


File format
Records
Recording mode
Sampling rate

COMTRADE
depending on setting [1]
circular
24 samples per cycle

Trigger setup:
Pre-trigger time
Post-trigger time
Trigger from inputs
Trigger from outputs
Communication

0.05...1.00 s
0.05...60.00 s
IN1, IN2...INx
K1...K6...K10
ThySetter

Set sample channels:


Instantaneous voltages

Event recording (SER)


Number of events
300
Recording mode
circular
Trigger:
Start/Trip of enabled protection or control element
IN1...INx
Binary inputs switching (OFF/ON or ON/OFF)
Setting changes
Power UP/Power DOWN
Auxiliary supply
Data recorded:
0...10 9
Counter (resettable by ThySetter)
Cause
binary input/trip/setting change/Power ON/OFF
Time stamp
Date and time

u L1, u L2, u L3, u E

Set analog channels (Analog 1...12):


Frequency
Input voltages
Residual voltage (measured and calculated)
Positive sequence voltage
Negative sequence voltage
Frequency rate of change

f
U L1, U L 2 , U L 3
U E, U EC
U1
U2
df /dt

Set digital channels (Digital 1...12):


Output relays state
Binary inputs state

K1...K6...K10
IN1, IN2...INx

Oscillography (DFR)

12

NV10P - Flyer- 07 - 2013

Connection diagram example

BF (K2)

L1
L2
L3
A

Note:
VTs can be placed
upstream (preferably)
or downstream of the DDI

NV10P
+UAUX

A3
A4
A5

dn
K1
da

B7

Raf(*)

(*) antiferrorisonance

B8

UE

K3

A6
BF - Breaker failure
A7
A8
A9

K4

A10

K5

A11
A12

K6

A13

B1
B2
B3

Note:
VTs can be placed upstream (preferably)
or downstream of the DDI

UL1

B4
B5

UL2

B6

UL3

VOLTAGE INPUTS

OUTPUT RELAYS

K2
A

TRIP - NV10P

Self test

A14

Trip NV10P (K1)


RS485

DI

BA+

F1
F2
F3
F4
F5

ETHERNET

D1

THYBUS

-UAUX

E1

A19

A21
A22

IN1
BINARY INPUTS

A20

IN2

BF (K2)

A1
A2

UAUX

RS232

FRONT PANEL

G~
NV10P-schCEI016-MT.ai

V connections VTs or direct measure of LV phase-to-phase voltages and residual voltage acquired with open delta VT in MV
NV10P - Flyer- 07 - 2013

13

Connection diagram example for active users (photovoltaic plant with low voltage interface) with reclosing function

BF (K2)

L1
L2
L3
A

NV10P

+UAUX

K1

A3
A4
A5

K2

A6
A7 BF - Breaker Failure
A8

dn
da

Raf(*)

B8

UE

B1

DI

UL1

B4
B5

UL2

B6

UL3

K6

A14

IN1

+UAUX

Reclose blocking
-UAUX

A21
A22

IN2

ETHERNET

A20

D1

E1

A2

Digital input and output relays connections for automatic reclosing function (ARF)
Phase-phase input voltages with direct connection to the LV side (UR = 400 V versions)
NV10P - Flyer- 07 - 2013

UAUX

RS232

FRONT PANEL

A1

F1
F2
F3
F4
F5

THYBUS

A19
INGRESSI DIGITALI

-UAUX

BF (K2)

BA+

CB open auxiliary contact (52b)

Enable reclosing
command

Close command

A12 Failed reclose


A13 +UAUX

K5

-UAUX

-UAUX

14

A11

Enable
reclosing
command

Trip - NV10P

A10 +UAUX

K4

Close command

52b

A9

K3

RS485

+UAUX

Trip - NV10P (K1)

B2
B3

RELE FINALI

B7

VOLTAGE INPUTS

(*) Raf - antiferrorisonance

SELF (self test)

Connection diagram example for active users with V-Sensor voltage sensors

L1
L2
L3

NV10P

OUTPUT RELAYS

A3

P1

P2

K1

A4
A5

K2

A6
A7
A8

K3

A9

K4

A10

K5

A11
A12

K6

A13
A14

F1
RS485

F2
F3
BF4
A+
F5

A21
A22
A1
A2

NV10P - Flyer- 07 - 2013

ETHERNET

IN2
FRONT PANEL

UAUX

Voltage inputs - V-sensor connections and residual voltage calculated by means of vector sum
15

E1

IN1

RS232

A20

BINARY INPUTS

A19

D1

THYBUS

DDI

DIMENSIONS
FRONT VIEW

REAR VIEW
120

107

101

D1

D1

A1
A2

4.5

C1

A3
A4
A5

RX

A6

TX

A7

ON

START

START

C3

A4
A5

RX

F3
F4

A6

F5

A7

TX

F2

A9

A10
A11

B2
B3

A10
A11

B4
B6

A12
A13
A14

B7
B8

A15
A16

B5
C5

C6

A15
A16
A17

A17

A18

A18

A19
A20

A19
A20

C7

C8

A21

A21

A22

A22

F4
F5

B2
B3
B4
B5

L1

B6
B7
B8

L2

L3

E1

FLUSH MOUNTING
(inductive VT inputs)

PROJECTING MOUNTING

F2
F3

B1

E1

FLUSH MOUNTING

F1

A8

C4
B1

A12
A13
A14

TRIP

A3

F1

A9

31

TRIP

149

171

80

177

A8

ON

A1
A2

C2

FLUSH MOUNTING
(electronic sensor inputs)

SIDE VIEW
275

212.5
205

30

4.5

170

30

25 15

FLUSH MOUNTING

PROJECTING MOUNTING
(Separate operator panel)

SEPARATE
OPERATOR PANEL

RACK MOUNTING

PROJECTING MOUNTING
(Stand alone)

FLUSH MOUNTING CUTOUT

ON

START

ON

TRIP

START
TRIP

102.5 0.3
70

ON

START

ON

TRIP

START

161
154

177 (4U)
101.6

482.6
465

TRIP

N.4 holes 3.5


Headquarter: 20139 Milano - Piazza Mistral, 7 - Tel. +39 02 574 957 01 ra - Fax +39 02 574 037 63
Factory: 35127 Padova - Z.I. Sud - Via dellArtigianato, 48 - Tel. +39 049 894 770 1 ra - Fax +39 049 870 139 0

www.thytronic.it

www.thytronic.com

thytronic@thytronic.it

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