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Order this data sheet by MC1496/D

MC1496
MC1596
Specifications
and Applications
Information
BALANCED
.

. designed

input

voltage

MODULATOR/
for

use where

(signal)

the output

and a switching

applications

include

synchronous

detection,

applications.

DEMODULATOR

suppressed

carrier

FM detection,

See Motorola

Application

voltage
function

is a product
(carrier).

of an
Typical

and amplitude

modulation,

phase detection,

and chopper

Note AN-531

for additional

design information.
.

Excellent

Carrier

Suppression

65 dB typ @ 0.5 MHz


50dBtyp@10

Adjustable

Gain and Signal

Balanced

High Common

Inputs

Bias

MHz

(Top View)

Handling

and Outputs
Mode

Rejection

85 dB typ

..,,,$.
.

L SUFFIX
CERAMIC PACKAGE
CASE 632-08

141uuu LL 74X

D SUFFIX
PLASTIC PACKAGE
CASE 751A-02
SO-14

P SUFFIX
PLASTIC PACKAGE
CASE 646-06

+ Signal
Input
Gain

Adjust

Gain Adjust
- Signal
Input
Bias
+ output
NC

FIGu RE2
SUPPRESSED-CARRIER

ORDERING

u
,
~

. .
-

,, EE
,, NC

,
,
,

,, output

, NC
, + Carrier
Input

,, NC
,,

Carrier

Input

(Top View)

INFORMATION

SPECTRUM
MC1~6D

S@14

MC1496G

Metal Can
o~c to

70~c

MC14S6L

Ceramic DIP

MC14WP

PlasticDIP

MC15SSG

Metal Can
- 55SCto + 125-C

MC1596L

FIGURE

Ceramic DIP

AMPLITUDE-MODULATION
OUTPUT

WAVEFORM

FIGu

RE4

AMPLITUDE-MODUL

.ATION

SPECTRUM

OMOTOROLA

INC., 1988

DS9132R3

MAXIMUM RATINGS* (TA = + 25C unless otherwise

noted)

Rating
Applied Voltage

Symbol

Value

Unit

AV

30

Vdc

V7 V8
V4 VI

+5,0
*(5+ i5Re}

Vdc

15

10

(V6 V7, V8 Vl,Vg


V7, Vg V8, V7 V4, V7 Vl,
V8 V4, V6 V8, V2 V5, V3 V5)
Differential

Maximum

Input Signal

Bias Current

Thermal Resistance, Junction to ~r


Ceramic Dual In-Line Package
Plastic Dual In-Line Package
Metal Package
Operating Temperature

100
100
160

Range

TA
MC1496
MCI 596

Storage Temperature

mA

CM

ROJA

Range

Oto +70
55to
+125
65to

Tstg

ELECTRICAL CHARACTERISTICS* (Vcc = +12 Vdc, VEE = 8.0 Vdc, II


TA = + 25C unless otherwise noted) (All input and output char
eristl

+150

= 1.0 mAdc, RI = 3.9 k~, R- = 1.0 kQ,


~ le~~ othe~ise noted
are sir :.end-ed

MC1596
Characteristic
Carrier Feedthrough
VC = 60 mV(rms) sine wave and
offset adjusted to zero
VC = 300 mVp-p square wave:
offset adjusted to zero
offset not adiusted
Carrier
fs =
fc
f;

Hg.

Note

Symbol

Min

fc = 1.0 kHz
fc = 10 MHz

>

fc = 1.0 kHz
f~ = 1.0 kHz

0.2
100

Suppression
10 kHz, 300 mV(rms)
= 500 kHz, 60 mV(rms) sine wave
= 10 MHz, 60 mV(rms) sine wave

Transadmittance Bandwidth (Magnitude) (RL = 50 ohms)


Carrier Input Port, VC = 60 mV(rms) sine wave
fs = 1.0 kHz, 300 mV(rms) sine wave
Signal Input Port, VS = 300 mV(rms) sine wave
IVCI = 0.5 Vdc

\.

1+.,

&
Min

MC1496

Common-Mode
Differential

Quiescent Output Voltage (Pin 6 or Pin 9)

Output Voltage Swing Capability

Power Supply Current


16 + Ig

65
50

300

300

80

3.5

2.5

3.5

200
2.0

200
2.0

MHz

VN

40
5.0

12
12

25
25

12
12

30
30

0.7
0.7

5.0
5.0

0.7
0.7

7.0
7,0

2.0

2.0

14

50

14

80

90

90

8,0

2,0
3,0

3.0
4.0

33

ITCIOOI

CMV

5.0
85

ACM

10

10

Vout
Vout

pD

8,0

* Pin number references pertain to this device when packaged in a metal can. To ascertain the corresponding
ceramic packaged devices refer to the first page of this specification sheet.

MOTOROLA

Ilo

mV(rms)

Icc
IEE

DC Power Dissipation

~V(rms)

CO%mon-Mode Gain, Signal Port, fs = 1.0 kHz,


IVCI = 0.5 Vdc

0.4
200

40

80

,?(

lnDut Swina, Sianal Port, fs = 1.0 kHz

0.04
20

40
5.0

Ctw*bn-MOde

65
50
8

of Input Offset Current

40
140

Unit

dB

Average Temper@?$&@fficient
(TA = 55C~~*~:~5C)
output ~fi,@i&f;re*t

Max

?*Io

Input 8ias Current

Typ

Semiconductor
2

5.0

Vp-p

85

dB

8.0

2.0
3.0

4.0
5.0

8,0

Vp-p
Vp-p
mAdc

33

pin numbers for plastic or

Products Inc.

nWC

-mW

GENERAL
Notel

Carrier

OPERATING

Feedthrough

base current, PD = 2 15 (V6 V1O)


scripts refer to pin numbers.

Carrier feedthrough
is defined as the output voltage at carrier
frequency with only the carrier applied (signal voltage = 0),
Carrier null is achieved by balancing the currents in the differential amplifier
by means of a bias trim potentiometer
(RI of
Figure 5).
Note 2 Carriar

INFORMATION*
+ 15 (V5

V1O) where sub-

Note 6 Design Equations


The following
is a partial list of design quations
needQ, to
operate the circuit with other supply voltagas and inpu~<&,O~~&.~
~,....z,.h
tions. See Note 3 for Re equation.
,., -c>.

Suppression

Carrier suppression is defined as the ratio of each sideband output to carrier output for the carrier and signal volt~e
levels specified.
Carrier suppression is very dependent on carrier input level, as
A low value of the carrier does not fully
shown in Figure 22.
switch the upper switching devices, and results in lower signal
gain, hence lower carrier suppression. A higher than optimum carrier level results in unnecessary device and circuit carrier feedThe
through,
which again degenerates the suppression figure.
MC1 596 has been characterized
with a 60 mV(rms)
sinewave
carrier input signal. This level provides optimum
carrier suppression at carrier frequencies
in the vicinity
of 500 kHz, and is
generally
recommended
for balanced
modulator
applications.
Carrier feedthrough
is independent
of signal level, Vs.
Thus
carrier suppression can be maximized
by operating with large signal levels. However, a linear operating mode must be maintained
in the signal-input transistor pair or harmonics of the modulating
signal will be generated and appear in the device output as spurious
sidebands of the suppressed carrier.
This requirement
places an

?t{Jp

~a,.
.<:)

v6=vg=v+15RL

..-,,\...

,Is ~.i+,,

$:t;,,
..>+~,i?.:i

uPPer limit on in Put-signal amplitude


(see Note 3 and Figure 20).
Note also that an optimum
carrier level is recommended
in Figure 22 for good carrier suppression and minimum
spurious side-

,?$tefi?=
Biasing
QJr,. .....

$$~$$~~fie
MC1 596 requires three dc bias vo Itage levels which must be
band generation.
..~~et externally.
Guidelines for setting up these three levels include
At higher frequencies circuit layout is very important
in order
at Ie=t 2 volts collector-base
bias on all transistors
to minimize
carrier feedthrough.
Shielding may be necessary in
,,,~i~ maintaining
while not exceeding the voltages given in the absolute maximum
order to prevent capacitive
coupling between the carrier in~$t
r.?,.~..~:
~.
rating table;
leads and the output leads.
!l>.< l\,,:,,
,

10, VS corresponds

within

the integrated

should be calculated as the summation


at each pOrt,
i.e.
aSSUming
Vg
=

circuit

[(V7,

V8) (Vi,

V4)]

>

2.7 Vdc

30Vdc

[(VI,

V4) (V5)1 2

>

conditions

Vg,

2.7 Vdc

are based on the following

V7 = V8,

approxima-

VJ = V4

i. (each sideband)
vs (signal)

i. (signal)
Y21S = VS (signal)

bandwidth

of

Vo=o

Signai transadmittance
bandwidth
is the 3dB
device forward transedmittance
as defined by:

Vc = 0.5 Vdc, V.

bandwidth

of the

= O

*Pin number references pertain to this device when packaged in a


matal can. To ascertain the corresponding pin numbers for plastic or ceramic packaged devices refer to the first page of this
specification sheet.

package

of tha voltage-current
prod15 = 16 = 19 and ignoring

V6,

MOTOROLA
@

30 Vdc >

Y21C =

Note 5 Power Dissipation

UCtS

2 Vdc

Carriar transadmittance
bandwidth
is the 3-dB
the device fomard transadmittance
as defined by:

to a

Swing

PD,

>

Note 8 Transadmittance Bandwidth

?~&-~&~mon-mode
swing is the voltage which may be applied
to bo~bases
of the signal differential
amplifier, without saturating
the current sources or without saturating the differential
amplifier
itself by swinging it into the upper switching devices.
This swing
is variable depending on the particular
circuit and bi~ing conditions chosen (see Note 6).

dissipation,

V8)]

Bias currents flowing into pins 1, 4, 7, and 8 are transistor base


currents and can normally
be neglected if external bias dividers
are designed to carry 1.0 mA or more,

req:i,~~~h~at
the signal input be below a critiby ~~~l~,,$he
bias current 15

Note that in,j$~e$st~cir cuit


of F igura
maximum v~e
q~ ~volt peak.
>:8::::,
J$L>$F.
r~$

Power

Vg) (V7,

V6 =

,,~,~
>,,::{,y,.,,~;~

Note 4 ~~~&on-Mode

[(V6,

The foregoing
tions:

.,.

x:.. ,:1<
A constant dc potential is applied t~~~h$.~$?~er input termina Is to
fully switch two of the upper tr~%i{~~{$><on and two transistors
off (Vc = 0.5 Vdc).
This in:&ffd~ forms a cascode differential
~+.>
~~~:i
,,:,~
amplifier.
Linear operation
cal value determined

30 Vdc >

Semiconductor
3

Products Inc.

Note 9 Coupling and Bypass Capacitors

Note

Cl and C2

Capacitors Cl and C2 (Figure 5) should be selected


actance of less than 5.0 ohms at the carrier frequency.

12 Signal

of

the

10 Output Signal, V.

and

modulating

signal

inputs

with

single-ended

oscillation
should be

directlv to each input using short leads. This will reduce


source-tuned circuits that muse the oscillation

the

SIGNAL

INPUT

(PINS

1 & 4)

The output signal is taken from pins 6 and 9, either balanced


Figure 12 shows the output levels of each of the
or single-ended.
two output sidebands resulting from variations
in both
the
carrier

-.

Stability

Under certain values of driving source impedance,


I n this event, an RC suppression network
may occur.

for a re-

connected
Note

Port

output

connection.

,.

>3,,,.:,.,

~.!1,,.
-!:[\?\

~a,.

c1

,.<,

51

Re=lk

~,)

0.1 PF

C*
CARRIER O.lpF
lNPUTVc HI

* +v~

-8

MC1496G
MC1596G

Vs.
MODULATING
SIGNAL
10 k
INPUT

10k

9
5

51

MC1496G
MC1596G

~~

-4

6
9

-%,}:*
.*$,it},,
,1:.,, ~~l.\ii

6.8 k

[f

-8 Vdc

FIGURE

8 TRANSCONDUCTANCE

BANDWIDTH

Vcc
lk

lk
~~

B
51

CARRIER
INPUT

0.1 PF

O,lPF
7
n
o

C+

Vs
MODULATING
SIGNAL
10k
INPUT

10k
/+

,.

&&

CARRIER

NOTE

: Pi

~~ber

numbers

-8 Vdc

VEE

references
for

plastic

pertein

or ceramic

to this deice
peckaged

MOTOROLA
@

NULL

-8 Vdc
VEE

when

devices

peckaged

refer

to the

in a metal

can.

first

of

page

Semiconductor
4

this

To

ascertain

specification

the

corresponding

sheet.

Products Inc.

pin

TEST CIRCUITS
FIGURE

9 COMMON-MODE

(continued)
FIGURE

GAIN

10 SIGNAL

GAIN

AND

OUTPUT

SWING

lk
.

Vs

9
~,10

50: :

6.8 k

50

-a Vdc
VEE
NOTE

: Pin

number

numbers

~efereces

for

plastic

pertain

to

or ceramic

this

device

packagecl

when

devices

packaged
refer

in a metal

to the first

can.

TO aster

page of this s

~~,,

TYPICAL
Tvpical

characteristics

were

Vc = 60 mV(rms),
FIGURE

11 SIDEBAND

OUTPUT

versus

CHARACTERISTICS

obtained

fs = 1 kliz,

CARRIER

with
VS

circuit

= 300

(CO~tlK~~@?

shown

mv(rms),

in

Fi~&~~5,

fc

= 500

T+~;$25~>~nless
,. $:.,$

,$s~\G~E
1,,,

LEVELS

+$?

kHz

(sine

Otherwi$e

12 SIGNAL-PORT
INPUT

wave),

noted.

PARALLEL-EQUIVALENT

RESISTANCE

u
u

2
L

m
L

I
10

1.0

2.0

5.0

10

f, FREQUENCY

\l

l\

I I I I
i]

I I I

1 1 I 1 I

(mV[rrns] )

20

50

100

(MHz)

MOTOROLA
@

I I
1

I.ul

Vc, C~Rl<%\$&EL

50

&

1
-qp

\.

100

FREQUENCY

versus

Semiconductor
5

10

1.0
f, FREQUENCY

(MHz}

Products Inc.

100

TYPICAL
Typical

characteristics

were

VC = 60 mV(rms),
FIGURE
15 SIDEBAND
TRANSADMITTANCES

CHARACTERISTICS

obtained

f~ = 1 kHz,

with

circuit

VS = 300

(continued)

shown in Figure 5, f~ = 500 kHz (sine wave),

mV(rms),

TA

= +25C

AND SIGNAL
PORT
versus FREQUENCY

unless

otherwise

FIGURE

noted.

16 CARRIER
SUPPRESSION
verws TEMPERATURE

1.0
0.9
F
:
E
u
~
<
+
k
z
z
m

0.8

0.3

z
.

0.2

0.7
0.6
0.5
0.4

0.1
0
0.1

1,0

100

10

fc, CARRIER

FREQUENCY

1000

-75

-50

-2@+:?i O * +25

+50

+75

+100

+125

+150 +175

(MHz)

*\:.
FIGURE

17 SIGNAL-PORT

FREQUENCY

.@~~URE18

RESPONSE

0.05

CARRIER

0.1

SUPPRESSION

0.5
fc, CARRIER

I Hllll

1.0

versus FREQUENCY

5.0

FREQUENCY

10

50

(MHz)

! I

I
0.05

0.1

I I 111111
0.5

1.0

fC, CA RR IERFREQUENCY

I 11111
5.0
10

IJ
50

(MHz)

M070ROLA
@

200

400

VS, INPUT SIGNAL AMPLITUDE

Semiconductor
6

Products Inc.

800

600
(mV[rms]

TYPICAL

FIGURE

CHARACTERISTICS

(continued)

21 SUPPRESSION
OF CARRIER
HARMONIC
SIDEBANDS
versus CARRIER
FREQUENCY

a
+
E 10
z
a
~g20
2La
XZ
-a
am30
Uu
0
S=
AE40
g:
=E

0a50
~u
u
m
* 60
~

7n

0.1

i,05

1.0

0.5

The
cuit,

MCI

596/MC

is shown
This

in

circuit

driven

by

1496,

Figure

balanced

multiplication

the

output

a monolithic

consists

The

of

an

balanced

upper

quad

differential

output

signal

50

(MHz)

modulator

cir-

lcaOOuT

23.

standard

sources.

10

5.0

fC, CAR RI ERFREQUENCY

collectors
of

are

the

input

times

dual

current

so that

voltages

the

amplifier

with

cross-coupled

two

is a constant

differential

amplifier

full-wave

occurs.

product

of the

T@~Js,
twdMnp@3.,

7 (+)

cates

that

the

difference
used

of

as

detector,
these

balanced

particular

input
modu

Iator,

so

of

other

an

~;tters

extert~g$~~,~wr

resistom.

\,so

SIGNAL
IVPUT

be

BIAS

resistance

to

may

at

the

be

device

v,,

lo~

t:~,.
.:;in

upper

a linear

will

Iow-lev@[

,@$~&%ion

contain,d,:~fi~~=n~

an amplitu~
amp

w~cE

For&~~~JPevel
.;,,.,
the

op@~WQ,-et

sum

and

Iatingslgnal
the

in the

the

operation

lower

differential

input

either

24 TYPICAL

amplifier

of

the

the

components

product

carrier

and

of the

input

input

port

NOTE

$O.lfi:

51

have

2n3

c 0.1 fiF

linear

-8

GARRIER~}
INPUT

MC1596G

difference

Port,

frequency

and
The
signal

will

si9nal

not

the

the

components

fundamental

output

and

amplitude

amplitude.
appear

output

AnV

in the

si9nal
of

dd
will

the

will
modu

harmonim

of

MODULATING
SIGNAL
INPUT

-V.
10 k
( )10

be a constant

amplitude

variations

output.

Pin

number

numbers

for

references
elastic

pertain
or ceramic

to this

MOTOROLA
@

deice

Dackaoed

when

devices

packaged
refer

to the

in a metal
first

4)
-a Vdc
VEE

NULL

can.

Daqe of

Semiconductor
7

I
15

t
CARRIER

CIRCUIT

signal

and

MODULATOR
lk
m

Ik

the output si9nal

ports,

frequencv

at

be operated

Vs

modulating
signal

may,

applications.

at both

modulating

frequencv.

carrier

The
most

is a function

frequency

carrier

times

amplifier

difference

,.A}.
Iitq@&@q
<*..*
t~+
,:..+.
.:,

cont$,~

FIGURE

dif~~~t~~!

or a satu~~e~$,. *de.
,. ...,>~.~,.
t.
in a li~$~~m~~
for

is operated
For

quad

GAINADJuST

output

The

requiring

connected

ar~$employed

1 [+)

product

qp~?~a$$ons
:,1:
i~~+~

has~~ts

4 (-)

and
may

balan$e~,+y~r,

characteris:~.e

load

onig~~k~h~rn

Thus,,$$>~~~b&

doubly

amplifier
that

external

con;st

and

signal

differential
pins

Also,

will

frequencies.

doubler,

output

lower

package

used.

spectrum

two

frequency

The
the

output
the

this

To

ascertain

SPeCifiCati

the

corresponding

OrT sheet.

Products Inc.

pin

OPERATIONS

INFORMATION

The linear signal handling capabilities of a differential


amplifier
are well defined.
With no emitter degeneration,
the maximum
input voltage for linear operation
is approximately
25 mV peak.

()(

RE)volts

peak.

This expression may be used to compute


RE for a given input voltage amplitude.

Input
(Vc)

value of

FIGURE
25 TABLE 1
GAIN AND OUTPUT
FREQUENCIES

VOLTAGE
Carrier
Signal

the minimum

Approximate
Volmge Gain

Output Signal
Frequency

RLVC
Low-level

dc

fM
2(RE

High-level

dc

The gain from the modulating signal input port to the output is
the MC1596/MC1496gain
parameter which is most often of interest
to the designer.
This gain has significance onlv when the lower
differential
amplifier is operated in a linear rode, but this includes
most applications of the device.
As previously mentioned,
the upper quad differentiali~,rn~$$fier
may be operated either in a linear or a saturated mod%, %Q,~*Skimate gain expressions
have been developed
for \#e ,h~i~$596/
MC1496 for a low-level modulating signal input an~i~~:$t,$llowing
*:3 \?\$,
carrier input conditions:
,~.: >,,:))>
.
~${y>!.$,
*}.
,.~
~
1) Low-level dc
.,.? ?%$(-~
t:~;,,t<~?
,:!>.
2) High-level dc
>:-:~>:*;\
..?
.>$..,
,,.?.
3) Low-level ac
%i
.tt.>y *,~
4) High-level ac
,:, ./:;.},
,.,,~i,~;>

Since the upper differential


amplifier
has its emitters internally
connected,
this voltage applies to the carrier input port for all
conditions.
Since the lower differential
amplifier
has provisions for an
external emitter resistance, its linear signal handling range mav be
adjusted by the user. The maximum
input voltage for linear operation
mav be approximated
from the following
expression:
V = 15

(continued)

+ 2re) (~)

RL
RE +2re

fM

Vc is Ca@V~ Inp&t V~ltage.


.
When ~~$~sput
signal contains multiple frequencies,
the$~~~~~$%pression given is for the output amplitude of
$~h~..pf.~]he two desired outputs, fc I fM and fc M.
3. .*fi+$ g%n expressions are for a single-ended output.
For
~,,$ ~~,ifferential
output connection,
mu Itiply each expres.,.}.*::
,, sion by two.
,.,~ ,>
2.

,:,,

~$,t,~{,,

~.,\,.&\

High-level

Double

0.637

ac

sideband

RL

RE+2re

fc ~f M;,<-;+;*,

suppressed,td~~~~~{$i% ovulation

application:~$~~+mav
496 with ~,3$~~&dc

is the

basic

be necessary to operate the


supply voltage instead of dual

supplies.
Figure 2G~$Q,@s2
balanced modulator
designed for
operation with a $io.~ ~?~ Vdc supply.
Performance
of this cir.)!... ,$,.,
cuit is similar to+~,h,~~,:~F.khedual supply modulator.
~\.a,
*
.<a%,.,
\.y).
AM Modula~r
f<:+
. ..};
. .,,,;
, ,.,~,!,8
The.,$$fr&Ji,$Yhown in Figure 27 mav be used as an amplitude
mod~latq~~wlth
a minor modification.
~~~+~q~ is required to shift from suppressed carrier to AM
opera~n
is to adjust the carrier null potentiometer
for the proper
amoun% of carrier insertion in the output signal.
However,
the suppressed carrier null circuitrv
as shown in
Figure 27 does not have sufficient adjustment
range. Therefore,
the modulator
may be modified
for AM operation
by changing
two resistor values in the null circuit as shown in Figure 28.
Product

Detector

The MC1596/MC1496
tor (see Figure 29).

makes an excellent

SSB product

MOTOROLA
@

K = Boltzmanns
Constant, T = temperature
Kelvin, q = the charge on an electron.

5fc +Q(6?.. :;&.


,x..$:.}~
~
.,?,){.
.. .!.
... ,>,. ,:::
..Q)..?\
::, ,;Je
,:\y,\.
.~>,
., ;,,),$!

application
of the MCI 596/%1
4%.
The suggested circuit for
this application
is shown ~n tfi~x>~ont page of this data sheet.
I n some
MC1596/MCl

7.

KT
s
q

in degrees

26 mV at room temperature

This product detector has a sensitivity of 3.0 microvolt


and a
dynamic range of 90 dB when operating at an intermediate
frequencv of 9 MHz.
The detector is broadband for the entire high frequency range.
For operation
at very low intermediate
frequencies down to 50
kHz the 0.1 #F capacitors on pins 7 and 8 should be increased to
1.0 #F.
Also, the output filter at pin 9 can be tailored to a
specific intermediate
frequencv
and audio amplifier
input impedance.
As in all applications
of the MC1596/MC1496,
the emitter
resistance between pins 2 and 3 may be increased or decreased to
adjust circuit gain, sensitivity, and dynamic range.
This circuit may also be used as an AM detector bv introducing
carrier signal at the carrier input and an AM signal at the SSB
input.
The carrier signal mav be derived from the intermediate
frequency signal or generated locally.
The carrier signal may be introduced
with
or without
modulation,
provided
its level is
sufficiently
high to saturate the upper quad differential
amplifier.
If the carrier signal is modulated,
a 300 mV(rms)
input level is
recommended.

detec-

Semiconductor
8

Products Inc.

APPLICATIONS

Doubly

INFORMATION

(continued)

Phase Detection

Balanced Mixer

The MC1 596/MC 1496 mav be used as a doublv


balanced
mixer with either broadband
or tuned narrow band input and
output networks.
The local oscillator
signal is introduced
at the carrier input
port with a recommended
amplitude of 100 mV(rms).
Figure
Output.

30 shows a mixer

Frequency

Doubler

with

a broadband

input

tor principle.
cauw the two

doubler

: Pin number
numbers

references

for

plastic

to this deice

pertain

or ceramic

packaged

A tuned circuit is added at oT~,,@$tWe inputs to


input signals to vary in pha~d~t?:,$finction
of fre-

quencv.
The MC1596/MC1496
will then pkw~~san
,,,;t..,.>:~s.
.\.\*
is a function of the input signal frequen~;+~,,~ ~.C~
\t}~\ .,t,
~.,
~
kt,
.$.
.$,
::?+ -~~
\<(:l},::
:;\kL
...~,>,:\.~-t$,.
y *.$,$,$<
~~ti:~
>,? $.,,

bv

Figures 31 and 32 show a broadband frequencv doubler and a


tuned output .verv high frequencv
(VHF)
doubler, respectively.

NOTE

Detection

output which is a function


of the phase difference$:m~~~the
two input signals.
$*, 1$3
An F M detector mav be constructed
bv usi~~,?k~~wse
detec-

and a tuned

The MCI 596/MC1496


will operate as a frequencv
introducing the same frequencv at both input ports.

and FM

The MCI 596/MC 1496 will function as a phase detector.


Highlevel input signals are introduced at both inputs. When botM~nputs
are at the same frequency
the MCI 596/M C1496 will ~~w~.an

when

devices

packaged
refer

to

the

in a metal
first

>,.*. ,,,..
aS&@~~$&
the corresponding
~,,;,+,. ,~:,.
this s*Y*@tion
sheet,
,!..
!$
,)>.!/$
:~j>

can.

page of

output

TO

which

pin

..* \ \.,,w.
$,$$,
.8..*,>!
,.+*4sy, $~<
:.
.,.
.,

TYPICAL
FIGURE

APPLICATION&

J\,,,:;}
.,. .
!$]s,
,\.,t\

\...,,,\
x~:~:,,
27 BALANCED

26 BALANCED
MODULATOR
(+12 Vdc SINGLE
SUPPLY)

Ff&$~RE

MODULATOR-DEMODULATOR

Vcc
lk

1/

820
m

Vcc

+12 Vdc
1

1.3k

lk
w

.
3k

, ,.;,
.,

3k

~Ql

51

1
CARRIER i INPUT

Q.1UF I

uF,

*W3

3,;;
4
6

8
6-

WI

MC1596G
MC1496G

FIGURE
29 PRODUCT
DETECTOR
(+12 Vdc SINGLE
SUPPLY)

820

1.3k

+12 Vdc

~
lk

INPUT

~s
MO:l{~~T: NG
INPUT

r
=
CARRIER
INPuT
~
300 mv(rms]

MC1496G

750

-Vo

SSB INPUT

3k

O.1MF

lk

O.l UF

L
*o.::510s:ok

I
6.8 k

15

t
CARRIER AOJUST

( VEE
-8 Vdc

T=
=

MOTOROLA
@

Semiconductor
9

Products Inc.

AF
10 ~F OUTPUT

TYPICAL

FIGURE
30 DOUBLY
(BROADBAND
INPUTS,9.O

APPLICATIONS

(continued)

BALANCED
MIXER
MHz TUNED
OUTPUT)

FIGURE

31 LOW-FREQUENCY

DOUBLER
Vcc
7 ~2 Vd,

Vcc
lk

Ik

fluOl ,.F

LOCAL
OSCILLAi !;R

O~01 JF

,go ,,,[r,,, ~,

MC1496G
9

RF INPuT

51

10

()
=

NULL AOJUST1
vEE &
. 8 V((, LI =44 TURNSAWG XO 28 ENAMELEOWIBE
ivOUNO
ON MI CROMETALS TYPE 446 TO RUIO CORE

LI =1 TURNAWG
NO 18 WlRE,7/3210

FREQUENCY

CARRIER FUNDAMENTAL

fs

MO DULATING

fc+fs

BALANCED

fc

MODULATOR
fc+nfs

SIGNAL

FUNDAMENTAL

CARRIER

SIOEBANDS

SPECTRUM
FUNDAMENTAL

CARRIER

nfc

CARRIER

HARMONICS

nfcinfs

CARRIER

HARMONIC

SIDEBAND

HARMONICS

SIDEBANDS

NOTE:

Pi

number

numbers

for

references
plastic

pertain
or ceramic

to

this

packaged

MOTOROLA
@

device

when

devices

packaged
refer

to the

in a metal
first

can.

page of

Semiconductor
10

To

this

ascertain

specification

thecorrespond;
sheet.

Products Inc.

ng pin

THERMAL

MOTOROLA
@

INFORMATION

Semiconductor
11

Products Inc.

OUTLINE DIMENSIONS

Motorola
not

reserves

assume

patent

rights

Affirmative

any

the

right

I(ability

nor the rights


Action

to make

ar!slng

out

of others

changes

w!thout

further

of the application
Motorola

not!ce

to any

or use of any

product

and @are

registered

products

trademarks

to Improve

described

of Motorola,

rehablllty,

here!n,

Inc

neither

Motorola,

Inc

funct!on
does

or design

(t convey

IS an Equal

any

Motorola
license

Employment

does

under

Its

Oppotiunlty/

Employer

MOTOROLA

Semiconductor
BOX

20912

PHOENIX,

12
L893-!O

here!n

or C!rcult

PR1hTED

IN

s.

,-88

LWER,AL

.,,,

.,638,

,,,,,

y,,,h,

Producfs Inc.
ARIZONA

85036

SUBSIDIARY

OF

MOTOROLA

INC.

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