PD - 96118A

IRF8707PbF
Applications HEXFET® Power MOSFET
l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg
Converters used for Notebook
Processor Power 30V 11.9m:@VGS = 10V 6.2nC
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
A
A
Benefits S
1 8
D
l Very Low Gate Charge S
2 7
D
l Very Low RDS(on) at 4.5V VGS 3 6
S D
l Ultra-Low Gate Impedance
4 5
l Fully Characterized Avalanche Voltage G D

and Current SO-8

Top View
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free

Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30
V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.1 A
IDM Pulsed Drain Currentc 88
PD @TA = 25°C Power Dissipation 2.5
W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150
°C
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJL g
Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient fg ––– 50
°C/W

Notes  through … are on page 9

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IRF8707PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 9.3 11.9 VGS = 10V, ID = 11A e
––– 14.2 17.5
mΩ
VGS = 4.5V, ID = 8.8A e
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VDS = VGS, ID = 25µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C VDS = VGS, ID = 25µA
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V
µA
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 25 ––– ––– S VDS = 15V, ID = 8.8A
Qg Total Gate Charge ––– 6.2 9.3
Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.4 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.7 ––– VGS = 4.5V
nC
Qgd Gate-to-Drain Charge ––– 2.2 ––– ID = 8.8A
Qgodr Gate Charge Overdrive ––– 1.9 ––– See Figs. 15 & 16
Qsw Switch Charge (Qgs2 + Qgd) ––– 2.9 –––
Qoss Output Charge ––– 3.7 ––– nC VDS = 16V, VGS = 0V
Rg Gate Resistance ––– 2.2 3.7 Ω
td(on) Turn-On Delay Time ––– 6.7 ––– VDD = 15V, VGS = 4.5V
tr Rise Time ––– 7.9 ––– ID = 8.8A
ns
td(off) Turn-Off Delay Time ––– 7.3 ––– RG = 1.8Ω
tf Fall Time ––– 4.4 ––– See Fig. 18
Ciss Input Capacitance ––– 760 ––– VGS = 0V
Coss Output Capacitance ––– 170 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 82 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 53 mJ
IAR Avalanche Current c ––– 8.8 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– MOSFET symbol D

3.1 A
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– integral reverse G

88 A
(Body Diode)c p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 8.8A, VGS = 0V e
trr Reverse Recovery Time ––– 12 18 ns TJ = 25°C, IF = 8.8A, VDD = 15V
Qrr Reverse Recovery Charge ––– 13 20 nC di/dt = 300A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRF8707PbF
100 100
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
4.5V 4.5V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

3.5V 3.5V
10 3.0V 3.0V
2.7V 2.7V
2.5V 10 2.5V
BOTTOM 2.3V BOTTOM 2.3V

1
2.3V
0.1 ≤60µs PULSE WIDTH
Tj = 25°C
2.3V
≤60µs PULSE WIDTH
Tj = 150°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
ID = 11A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

T J = 150°C
10 1.5
(Normalized)

T J = 25°C
1 1.0

VDS = 15V
≤60µs PULSE WIDTH
0.1 0.5
1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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 IRF8707PbF
10000 5.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED ID= 8.8A
C rss = C gd VDS= 24V

VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd 4.0
VDS= 15V
C, Capacitance (pF)

1000 Ciss
3.0

Coss
2.0
100 Crss

1.0

10 0.0
1 10 100 0 1 2 3 4 5 6 7 8
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100 100
100µsec
1msec
T J = 150°C
10 10
10msec

T J = 25°C
1 1
T A = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.4 0.6 0.8 1.0 1.2 1.4 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF8707PbF
12 2.5

VGS(th) , Gate Threshold Voltage (V)

10
2.2
ID, Drain Current (A)

8
1.9 ID = 250µA
6

1.6
4 ID = 25µA

2 1.3

0 1.0
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
T A , Ambient Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Ambient Temperature

100

D = 0.50
Thermal Response ( Z thJA ) °C/W

10 0.20
0.10
0.05
1 0.02
SINGLE PULSE
0.01 ( THERMAL RESPONSE )

0.1 PDM
R1
R1
R2
R2
R3
R3
R4
R4 Ri (°C/W) τi (sec) t1
τJ τA 2.2284 0.000169
τJ τA t2
0.01 τ1 τ2 τ3 τ4 7.0956 0.013738
τ1 τ2 τ3 τ4 Notes:
25.4895 0.68725 1. Duty factor D = t 1 / t 2
Ci= τi/Ri
Ci= τi/Ri 15.1981 25.8 2. Peak T J = P DM x Z thJA + TA
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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 IRF8707PbF
35 250
RDS(on), Drain-to -Source On Resistance (m Ω)

EAS , Single Pulse Avalanche Energy (mJ)

ID = 11A ID

30 TOP 0.67A
200 0.82A
BOTTOM 8.80A
25
150

20

TJ = 125°C 100
15

T J = 25°C 50
10

5 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy
vs. Drain Current

V(BR)DSS
15V tp
L
VCC
VDS L DRIVER
DUT
0
1K
20K
S

RG D.U.T +
- VDD
IAS A
20V
tp 0.01Ω
I AS

Fig 14. Unclamped Inductive Test Circuit Fig 15. Gate Charge Test Circuit
and Waveform
Id
Vds

Vgs

Vgs(th)

Qgodr Qgd Qgs2 Qgs1

Fig 16. Gate Charge Waveform

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 IRF8707PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD VDS
V DS
90%
V GS
D.U.T.
RG
+
- V DD

V GS 10%
Pulse Width ≤ 1 µs VGS
Duty Factor ≤ 0.1 %
td(on) tr td(off) tf

Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms

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IRF8707PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)

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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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 IRF8707PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.38mH, RG = 25Ω, IAS = 8.8A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2007
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