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Air

Annealed
1.50E-04
6.24E-04
7.19E-01
1.68E+01
1.30E+02
1.00E+02

Ref
[1]
[4]
[7]
[10]
[13]
[16]

Resistivity (-cm)
Forming
Treatment
6.00E-03
1.43E-03
2.90E-03
5.00E-03
6.50E-03
9.90E-03
1.40E-01

[2]
[5]
[8]
[11]
[14]
[17]
[19]

Ref

Vacuum
treatment
1.64E-02
1.50E-03
1.00E-02
4.30E-03
7.08E-03
4.21E-03

Ref
[3]
[6]
[9]
[12]
[15]
[18]

References:
[1]

M.J. Alam, D.C. Cameron, Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by
solgel process, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 19 (2001) 1642. doi:10.1116/1.1340659.

[2]

J.-P. Lin, J.-M. Wu, The effect of annealing processes on electronic properties of sol-gel derived Al-doped ZnO films, Appl.
Phys. Lett. 92 (2008) 134103. doi:10.1063/1.2905279.

[3]

S. Mridha, B. D., Aluminium doped ZnO films: electrical , optical and photoresponse studies, J. Phys. D. Appl. Phys. 40
(2007) 69026907. doi:10.1088/0022-3727/40/22/008.

[4]

X. Zi-qiang, D.H. , L. Yan, C. Hang, Al-doping effects on structure , electrical and optical properties of c -axis-orientated
ZnO: Al thin films, Mater. Sci. Semicond. Process. 9 (2006) 132135. doi:10.1016/j.mssp.2006.01.082.

[5]

M. Gao, J. Liu, H. Sun, X. Wu, D. Xue, Influence of cooling rate on optical properties and electrical properties of nanorod
ZnO films, J. Alloys Compd. 500 (2010) 181184. doi:10.1016/j.jallcom.2010.03.236.

[6]

R. Bel Hadj Tahar, N. Bel Hadj Tahar, Crystallographic Orientation in Pure and Aluminum-Doped Zinc Oxide Thin Films
Prepared by Sol-Gel Technique, J. Am. Ceram. Soc. 88 (2005) 17251728. doi:10.1111/j.1551-2916.2005.00268.x.

[7]

R. Maity, S. Kundoo, K.K. Chattopadhyay, Electrical characterization and PooleFrenkel effect in solgel derived ZnO:Al
thin films, Sol. Energy Mater. Sol. Cells. 86 (2005) 217227. doi:10.1016/j.solmat.2004.07.008.

[8]

R. Jahn, P. Lbmann, Microstructure and performance of AZO thin films prepared by solgel processing, J. Sol-Gel Sci.
Technol. 66 (2013) 120125. doi:10.1007/s10971-013-2974-0.

[9]

G.K. Paul, S. Bandyopadhyay, S.K. Sen, Transport Properties of As-Prepared Al-Doped Zinc Oxide Films Using Sol Gel
Method, Phys. Status Solidi. 191 (2002) 509518. doi:10.1002/1521-396X(200206)191:2<509::AID-PSSA509>3.0.CO;2D.

[10] S. OBrien, M. opuroglu, P. Tassie, M.G. Nolan, J. a. Hamilton, I. Povey, et al., The effect of dopants on the morphology,
microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method, Thin Solid Films.
520 (2011) 11741177. doi:10.1016/j.tsf.2011.04.210.
[11] T. Schuler, M.. Aegerter, Optical, electrical and structural properties of sol gel ZnO:Al coatings, Thin Solid Films. 351
(1999) 125131. doi:10.1016/S0040-6090(99)00211-4.
[12] H. Gmez-Pozos, a. Maldonado, M.D.L.L. Olvera, Effect of the [Al/Zn] ratio in the starting solution and deposition
temperature on the physical properties of sprayed ZnO:Al thin films, Mater. Lett. 61 (2007) 14601464.
doi:10.1016/j.matlet.2006.07.053.
[13] V. Musat, B. Teixeira, E. Fortunato, R.C.C. Monteiro, Effect of post-heat treatment on the electrical and optical properties
of ZnO:Al thin films, Thin Solid Films. 502 (2006) 219222. doi:10.1016/j.tsf.2005.07.278.
[14] K. Schellens, B. Capon, C. De Dobbelaere, C. Detavernier, A. Hardy, M.K. Van Bael, Solution derived ZnO:Al films with
low resistivity, Thin Solid Films. 524 (2012) 8185. doi:10.1016/j.tsf.2012.09.059.
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Solid Films. 515 (2007) 86018604. doi:10.1016/j.tsf.2007.04.012.

[16] D. Zhang, J. Zhang, Y. Cheng, L. Yuan, X. Miao, Ultraviolet Emission and Electrical Properties of Aluminum-Doped Zinc
Oxide Thin Films with Preferential C-Axis Orientation, J. Am. Ceram. Soc. 93 (2010) 32913298. doi:10.1111/j.15512916.2010.03847.x.
[17] P.-C. Yao, S.-T. Hang, Y.-S. Lin, W.-T. Yen, Y.-C. Lin, Optical and electrical characteristics of Al-doped ZnO thin films
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